bit-line leakage cancellation: design and test automation

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April 22, 2010 1 Bit-Line Leakage Cancellation: Design and Test Automation Sudhanshu Khanna

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Bit-Line Leakage Cancellation: Design and Test Automation. Sudhanshu Khanna. Deliverables. Bit-Line Leakage Cancellation Schematic Layout On-Chip High Speed Testing Memory BIST. BOTTOM – UP DESIGN. TOP – DOWN DESIGN. Goals & Constraints: L1 Cache design. Achieve High Density - PowerPoint PPT Presentation

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Page 1: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 1

Bit-Line Leakage Cancellation: Design and Test Automation

Sudhanshu Khanna

Page 2: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 2

Deliverables

Bit-Line Leakage Cancellation Schematic Layout

On-Chip High Speed Testing Memory BIST

BOTTOM – UP DESIGN

TOP – DOWN DESIGN

Page 3: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 3

Goals & Constraints: L1 Cache design

Achieve High Density How: More Bit-Cells, Less Periphery

Achieve High Speed How: Lower Read Time

L1 bit-cells use Low-Vt transistors

Memory-Vdd must be same as Core-Vdd => Can’t use Multi-Vdd to increase performance

Page 4: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 4

Why is Bit-Line Leakage an Issue

Challenges (Scaling issues) Lower Iread

Higher Ileakage

Only solution: Reduce # cells on a bit-line => Lower Density

Page 5: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 5

Why is Bit-Line Leakage an Issue

SA differential = V(BL) – V(BLB)

If BL leaks, differential lowers (data-dependent too)

More time needed to generate same differential => Lower Speed

Page 6: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 6

Where is Bit-line leakage an issue?

Advanced technology nodes Issue: High Vt variation, high leakage Result: Impact on performance

Sub-threshold memory Issue: Low Ion/Ioff

Result: Energy penalty due to higher required BL swing

High Temperature Compliant Memories

Alternative memories

Page 7: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 7

Bit-line Leakage Cancellation

Sense leakage value during pre-charge

Inject opposite current during read

Drawbacks: V -> I conversion inaccuracies Pre-charge to VDD – Vt required

Agawa et al, 2001

Page 8: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 8

High Speed Testing Issues

TESTER

~ 20 MHz

1 GHz InverterOUTPUT PAD

~ 200 MHz

Signal Analyzer

~ 100 MHz

You can make a FAST inverter, but you cant see it work

Page 9: Bit-Line Leakage Cancellation:  Design and Test Automation

Memory BISTMemory BIST

BIST BIST modemode

High Speed ClockHigh Speed Clock External Tester (Slow Testing)External Tester (Slow Testing)

Address generatorAddress generatorAddress generatorAddress generatorFFSSMM

FFSSMM

Data generatorData generatorData generatorData generator

Control generatorControl generatorControl generatorControl generator

StartStart DoneDone

FailFail

MemoryMemory

Page 10: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 10

M-BIST Design Flow

Algorithm

Behavioral Verilog: NC-Verilog

Structural Verilog: RTL Compiler

Place and Route: Encounter

Integration with Custom Memory: Virtuoso

Page 11: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 11

Top-Down Flow Issues Faced

RTL Complier Assign Statements Unused Nets connect to VDD, VSS

Inputs of standard blocks e.g. Carry-In of Adder Unused bus signals: e.g. Z[4] of a bus Z[11:0]

Encounter < > vs [ ]

Virtuoso: Global Signals

Page 12: Bit-Line Leakage Cancellation:  Design and Test Automation

April 22, 2010 12

Thanks for your time !