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GenISys GmbH Eschenstraße 66 82024 Taufkirchen - Germany Phone +49 (0)89 3309197-60 Fax +49 (0)89 3309197-61 E-mail [email protected] GenISys USA Phone +1 (408) 353-3951 E-mail [email protected] GenISys Japan / Asia-Pac. Phone +81 (3) 6423-0611 E-mail [email protected] Hunitec Co. Ltd Korea Phone +82 (31) 726-9396 E-mail [email protected] www.genisys-gmbh.com © GenISys/BEAMER/08.13/E/1.0/V2.0/ROBI Based in Munich, Germany, with offices in Tokyo, Japan and Santa Clara, California, GenISys develops, markets and supports flexible, high-performance software solutions for the optimization of micro and nano fabrication processes. Addressing the market for lithography and inspection, GenISys combines deep technical expertise in layout data processing, process modeling, correction and optimization with high caliber software engineering and a focus on ease of use. GenISys products give researchers, manufacturers and system suppliers unparalleled efficiency, ease of use and optimal value in research, development and production of future nano-patterning technologies. As a company focused on customer service, GenISys delivers fast, highly dedicated support for application and development of needed functionality to meet demanding customer needs. BEAMER Advancing the Standard Electron-Beam Lithography Software Optimum productivity, quality and innovation by superior data preparation for e-beam lithography systems All in One Lithography Simulation Electron-Beam Lithography Software Electron Scattering and Process Blur Quantified

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Page 1: BEAMER - genisys-gmbh.com · BEAMER comes with the essential tools to experimentally quantify tool and process contributions. Fast, reliable and accurate PSFs for e-beam lithography

GenISys GmbHEschenstraße 6682024 Taufkirchen - GermanyPhone +49 (0)89 3309197-60Fax +49 (0)89 3309197-61E-mail [email protected]

GenISys USAPhone +1 (408) 353-3951E-mail [email protected]

GenISys Japan / Asia-Pac.Phone +81 (3) 6423-0611E-mail [email protected]

Hunitec Co. Ltd KoreaPhone +82 (31) 726-9396E-mail [email protected]

www.genisys-gmbh.com © GenISys/BEA

MER

/08.13/E/1.0/V2.0/RO

BI

Based in Munich, Germany, with offices inTokyo, Japan and Santa Clara, California,GenISys develops, markets and supportsflexible, high-performance software solutionsfor the optimization of micro and nano fabrication processes. Addressing the marketfor lithography and inspection, GenISyscombines deep technical expertise in layoutdata processing, process modeling, correctionand optimization with high caliber softwareengineering and a focus on ease of use.

GenISys products give researchers, manufacturers and system suppliers unparalleled efficiency, ease of use andoptimal value in research, development andproduction of future nano-patterningtechnologies.

As a company focused on customer service,GenISys delivers fast, highly dedicatedsupport for application and development ofneeded functionality to meet demanding customer needs.

BEAMER

Advancing the Standard

Electron-BeamLithographySoftwareOptimum productivity,quality and innovation by superior data preparation for e-beamlithography systems

All in One Lithography Simulation Electron-Beam Lithography Software Electron Scattering and ProcessBlur Quantified

Page 2: BEAMER - genisys-gmbh.com · BEAMER comes with the essential tools to experimentally quantify tool and process contributions. Fast, reliable and accurate PSFs for e-beam lithography

e-Beam LithographySoftware

Productivity, Quality& Innovation

High-resolution and high-throughpute-beam lithography is severely impactedby process effects, electron scatteringeffects, and tool artifacts resulting in non-ideal pattern transfer. Although the e-beam tool is a highly sophisticated andexpensive printer, the pattern data needsto be optimized to significantly reduce theeffects of various error sources such asbeam positioning between shapes, fillingshapes with “shots” on a discrete grid,field position dependent aberrations,stitching between fields, the spread ofenergy by electron scattering (proximity)and process effects.

BEAMER is a comprehensive softwareplatform for preparing the data ideally forexposure:

� Support for all major layout and e-beammachine formats

� Superior machine specific fracturing ofcomplex curved layouts

� Optimizing field and shot placement,writing strategy and order

� Library of comprehensive layoutprocessing functions

� Integrated layout editor� Ultra-fast and comprehensive viewer

for fast inspection and verification� Powerful proximity and process effect

correction technology� e-beam simulation of absorbed energy

and resist contours

BEAMER BEAMER

The BEAMER core provides reliable andhighly powerful processing of large andcomplex layout data. It provides the userwith a large number of functions for extracting, combining, modifying the layoutfor an optimum exposure. The interfacesto all major e-beam exposure tools are developed in strong co-operation with themachine vendor and are continuously optimized for the best exposure results,extending the limits of the system by smartdata preparation. Examples include: optimizing the fracturing to significantlyreduce shot position artifacts, avoidingfield position and stitching issues by auto-mated floating field, user controlled fieldpositioning, and clever multi-pass strate-gies. The user can instantly visualize andquickly optimize the exposure process,including field and shot position. Applyingtechniques such as “bulk & sleeve” or“coarse & fine” combined with proximityeffect correction (PEC) to easily and effec-tively achieve high resolution, smoothedges at increased throughput.

PEC is essential for improving the expo-sure quality by automatically adjusting exposure doses for optimum CD (criticaldimension) uniformity and contrast. Addi-tionally PEC eliminates the need to experi-mentally adjust the exposure dose foreach layout thereby increasing productivityand process reproducibility. Performingtraditional “Trial & Error” optimizations isvery expensive and time consuming.

Advanced techniques such as “model-based undersize-overdose” enables ultra-high resolution in difficult scenarios, 3DPEC for three dimensional resist profiles insingle and multi-layer resists, and processcalibration with simulation for quick devel-opment of new innovative solutions.

Strong collaboration with leading e-beamcenters drives fast development cyclesand assures that the user always get thebest from their e-beam systems andprocesses. BEAMER is designed for theindustrial user focused on productivity, aswell as universities and R&D centers interested in flexibility and high resolution lithography.

Weizmann Institute - Israel

Weizmann Institute - Israel

Devin K. Brown, Georgia Institute of Technology - USA

Paul Scherer Institute - Switzerland

Paul Scherer Institute - Switzerland

AMO GmbH - GermanyAMO GmbH - Germany

AMO GmbH - Germany

Page 3: BEAMER - genisys-gmbh.com · BEAMER comes with the essential tools to experimentally quantify tool and process contributions. Fast, reliable and accurate PSFs for e-beam lithography

BEAMER Major FeaturesLayout Import / Export:� Layouts of unlimited size in all major formats (GDSII, CIF, DXF, LTXT, bitmap)� e-beam machine formats (JEOL, Vistec, Elionix, Crestec, Raith, Oasis.Mask, MEBES)

Advanced Fracturing:� Support of all major machine formats� Optimized for arbitrary shapes� Curved fracturing� Correction for shot positioning� Beam Step Size (BSS) Fracturing� Field position control (tiled, floating, manual)� Multi Pass exposure� Writing order control

Integrated Layout Editor:� Create new layout� Edit layout within flow� Add text, circle, ellipse, arc, …

Layout VIEWER:� Integrated detachable global viewer� Multi-view, measurements� Metrology support � Shot and field position view

Layout and Boolean Operation:� Healing, Biasing, Sizing, Merge, Tone reversal (NOT)� AND, OR, XOR, P-XOR, MINUS� Extract layer, datatype, cell, region� Scale, Shift, Rotation, Mirror� Filter geometries by width, height and area� Grid adjustment� Mapping layout layers and datatypes � Pre-Fracture

PEC and Process Correction� Full PEC including short-range corrections� Shape PEC for short- and mid-range� Corner PEC� 3D correction for single and multi layer resist� FDA (Feature Dose Assignment)� e-beam Modeling

Flow Control Modules� Split � Loops with variables� Script for starting command line application from flow� Optimizer for parameter fitting

Proximity and Process Correction

2D Dose PEC� Fast and robust edge equalization technique� Excellent dimension control by optimized dose on feature edges� Fracturing based on absorbed energy distribution� Perfectly symmetrical and stable for arbitrary shapes

Shape Correction� Model based shape correction of short and mid-range effects� Combination with long range correction with dose modulation� Model based contrast enhancement (“undersize – overdose”)

3D PEC� Correction for defined resist thickness at any layout position (resist profile) for single layer resist (e.g. 3D gratings, 3D holograms, angled sidewalls)� Correction for critical dimension (CD) for each layer for a multi-layer resist (T-Gate, “bridge”)

Corner PEC� Corner sharpening correction at feature edges and corners.� Dose PEC combined with rule based correction for edges, inner and outer corners.

Flexible PSF and Process Modeling� PSF from Monte Carlo simulation or experimental table� Visualization and fit of PSF function� Apply full PSF data or Gaussian approximation� Process loading, shot size dependent blur, fogging effect

e-beam Modeling� 2D intensity image, 2D resist contour at multiple thresholds� 1D / 2D image viewing and analysis� Multi- and matrix-view for automated runs� Metrology for automated measurement and comparison to experiment

Optimizer for Process Calibration� Automated fitting of process parameter (e.g. PSF) to experimental data� Convenient interface to metrology data

The VisualFLOW™ user interface allowsto visually design process flows by simplydragging, dropping and connecting functional modules, providing increasedproductivity and efficiency. A comprehen-sive library of modules is readily availableand extensible by custom flows that canbe stored in user definable databases formanagement and reuse. The Pythonscripting interface allows further automationand workflow integration with other soft-ware without a GUI.The integrated Layout VIEWER allows layout inspection at all stages, comparinglayouts in multi-view mode, measurementfunctions, metrology support, viewing fieldand shot placement. The Layout Viewer isalso available as stand-alone.

BEAMER includes Import and Export forall major layout and machine formats,where the data volume is not limited. Anintegrated Layout Editor allows the creationof new layout or the modification of existinglayouts to add text or other features at anystage. The machine formats are continu-ously enhanced in strong co-operationwith the machine vendors for getting thebest exposure result by providing optimaldata for the system, meaning optimal frac-

turing of complex curved layouts, control-ling field – and shot placement, definingthe write order, compensating for tool arti-facts by intelligent multi-pass, and usingpowerful compaction to create small datavolumes.

BEAMER provides innovative tools for PECand advanced process correction fornano-scale e-beam lithography. A robust2D PEC is complemented by a modelbased shape and rule based corner cor-rection and correction for 3D single andmulti-layer resist profiles. The flexible

Point Spread Function (PSF) and adaptedalgorithms allow the correction of resistand other process effects as well.

BEAMER integrates e-beam simulation,allowing for verification and optimizationvia modeling of the corrected layout. Themodeling includes beam positioning forthe major e-beam writers. The combina-tion of Metrology for comparing simulationdata with experimental data and the Opti-mizer for the calibration of the model (PSF)parameter enables process effect correction.

BEAMER BEAMER

200 nm Line-Space Pattern (100 nm HSQ on SOI)

Zoomed with Writing Order Shot View + Writing Order

Page 4: BEAMER - genisys-gmbh.com · BEAMER comes with the essential tools to experimentally quantify tool and process contributions. Fast, reliable and accurate PSFs for e-beam lithography

Layout VIEWER is an ideal, ultrafast tool toinspect and compare layouts. On the inputside, all major layout (GDSII, OASIS, CIF,DXF) and e-beam machine formats aresupported. Multiple layout files can beloaded in parallel to draw them overlaid.The user has a multitude of viewing options and capabilities.

� Extensive color management (user defined palette, transparency and overlay colors , and mapping of colors to layers/datatypes, doses, cells, layouts)� Metrology support (measure, pick, various snapping options such as snap to edge, snap to corner, snap orthogonal)� Hierarchy support – view of the hierarchy tree, selection of cells / layers to be displayed, drawing of features down to a user specified hierarchy depth)� Script generation for automation of metrology equipment and visualization of metrology results added into the layout

All products share a highly dedicatedsupport, have flexible licensing and areavailable on various platforms/operatingsystems.

Flexible licensing and platform support� USB-License Key for dongle and network� Flexible on off-the shelf PCs (>4GB RAM recommended)� Windows XP, Vista, 7 (32, 64 bit)� Linux 64: Red Hat >v4.6, Ubuntu > v9.04, other distributions are supported on request� Parallel processing: Multithreading, optional cluster support

Maintenance and support� Technical Support Hotline (e-mail, phone)� Frequent updates with enhancements, new functions, performance tuning and bug fixes� Regional trainings, technical workshops, user meetings� 12 month maintenance service included in license price

Electron Scattering andProcess Blur quantified

A Point Spread Function (PSF) is the es-sential input for any type of Proximity/Process Effect Correction or e-beamsimulation and defines the deposited energy as a function of the distance fromthe incident beam. One can think of it asthe convolution of electron scattering,beam size (or beam blur), and process effects. The quality of a process effectcorrection entirely depends on the knowledge of that PSF. As such, a goodstarting point is the Monte Carlo (MC) simulation that includes the fast secondar-ies generated by the primary exposure aswell as the backscattering process.

TRACER offers an easy to use interface fordefining the parameters (material data,stack parameters, acceleration voltage),running the MC simulation, visualization ofr-z simulation results (energy spread atdifferent resist thicknesses), and the extraction of the 1D PSF which can beused for PEC. In addition, the tool contributions such as spot size andprocess blurs such as diffusion need to bequantified and factored in.

BEAMER comes with the essential tools toexperimentally quantify tool and processcontributions.

Fast, reliable and accuratePSFs for e-beam lithographycorrection and simulation

TRACER includes all the essentialsneeded to combine Monte-Carlo PSFs andprocess PSFs into one effective PSF thatdescribe a particular process, to archiveand maintain these functions.

TRACER is a� Monte Carlo simulator that computes the electron-solid interaction for e-beam exposure� Archive to maintain / manage all PSFs� Visualization tool to quickly inspect the PSF� Facilitator to combine electron PSFs and process PSFs into a single effective PSF or to separate out the process contribution PSF from an experimental PSF

TRACER VIEWER

BEAMER integration of the TRACER archive shown above.