basic mechanical sensors and sensor principles. definitions transducer: a device that converts one...
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Sensors : definition and principlesTRANSCRIPT
BASIC MECHANICAL SENSORS
ANDSENSOR PRINCIPLES
Definitions
• Transducer: a device that converts one form of energy into another.
• Sensor: a device that converts a physical parameter to an electrical output.
• Actuator: a device that converts an electrical signal to a physical output.
Sensors :definition and principles
Sensors : taxonomies• Measurand
– physical sensor– chemical sensor– biological sensor(cf : biosensor)
• Invasiveness– invasive(contact) sensor– noninvasive(noncontact) sensor
• Usage type– multiple-use(continuous monitoring) sensor– disposable sensor
• Power requirement– passive sensor– active sensor
Potentiometers
Translational Single turn
Helical
𝑣0=𝑅 𝑖
𝑅 𝑣𝑠=𝑥 𝑖
𝑙 𝑣𝑠
The Wheatstone bridge
Eb A
B
C
D
R1 R2
R3 R4
Rg
Ig
Circuit Configuration
+ VAC -
+ VC -
Eb A
B
C
D
R1 R2
R3 R4 + VA -
E0 = VAC
VA = EbxR4/(R1+R4)
VC = EbxR3/(R2+R3)
E0 = VAC = VA – VC =
))(()(
3241
3142
32
3
41
4
RRRRRRRRE
RRR
RRRE bb
Null-mode of Operation
Eb= 10 V A
B
C
D
R1= 1000
R2= 600
R3 R4= Rx
0 + -
Ig
At balance:
R2R4 = R1R3 or R1/R4 = R2/R3 and the output voltage is zero
9
Example 1
Eb= 10 V A
B
C
D
R1= 1000
R2= 600
R3 R4= Rx
0 + -
Ig
Assume that the bridge shown is used to determine the resistance of an unknown resistance Rx. The variable resistance is the resistance box that allows selection of several resistors in series to obtain the total resistance and it is set until null position in the meter observed. Calculate the unknown resistance if the variable resistance setting indicates 625.4.
The bridge will be balanced if R1/R4 = R2/R3 . Hence, R4 = Rx = R1/(R2/R3) = 1000x625.4/600 = 1042.3 .
Deflection-mode of OperationAll resistors can very around their nominal values as R1 + R1, R2 + R2, R3 + R3 and R4 + R4. Sensitivity of the output voltage to either one of the resistances can be found using the sensitivity analysis as follows
241
4
232
241
31423232413
1
0
)(
)()())((())((
1
RRRE
RRRRRRRRRRRRRRRE
RES
b
bR
232
3
2
0
)(2 RRR
ERE
S bR
232
2
3
0
)(3 RRRE
RES bR
241
1
4
0
)(4 RRRE
RES bR
+ Eg -
ETh = E0
A
B
C
D
RTh
Rg R3 R4
R1 R2
RTh
Ig
ETh = E0 = VAC (open circuit)
RTh = R1//R4 + R2//R3
Ig = E0/(RTh + Rg)
Eg = E0Rg/(RTh + Rg) In case of open-circuit (Rg) Eg = E0
The equivalent circuit
Stress and strain
L
T
A
Tension: A bar of metal is subjected to a force (T) that will elongate its dimension along the long axis that is called the axial direction. Compression: the force acts in opposite direction and shortens the lengthA metal bar
Stress: the force per unit area a = T/A (N/m2)
Bar with tension
L
T
L+dL
dL
StrainStrain: The fractional change in lengtha = dL/L (m/m)
D
L T
Hooke’s lawStress is linearly related to strain for elastic materials
a = a /Ey = (T/A)/Ey
Ey : modulus of elasticity ( Young’s modulus)
Elastic Region
Plastic Region
Strain (a)
Stress (a)
Elastic Limit
Breaking point
The stress-strain relationship
Transverse strainThe tension that produces a strain in the axial direction causes another strain along the transverse axis (perpendicular to the axial axis) as
t = dD/D
This is related to the axial strain through a coefficient known as the Poisson’s ratio as
dD/D = - dL/L
The negative sign indicates that the action is in reverse direction, that is, as the length increases, the diameter decreases and vice versa. For most metals is around 0.3 in the elastic region and 0.5 in the plastic region
Electrical Resistance of Gage Wire
D
L T
R=L/A
dAARdL
LRdRdR
dAALdL
Ad
ALdR 2
AdA
LdLd
RdR
A = r2 = (/4)D2 and dA/A = 2 dD/D yields dD/D = - dL/L
)21(
L
dLdR
dR
Piezoresistive effect Dimensional effect
Principles of strain measurement dR/R
dL/L
metals semiconductors
Gage factor - K
K = (dR/R)/(dL/L) = (dR/R)/a
For wire type strain gages the dimensional effect will be dominant yielding K 2
For heavily doped semiconductor type gages the piezoreziztive effect is dominant yielding K that ranges between 50 and 200
dR can be replaced by the incremental change R in this linear region yielding R/R = Ka
Bonded Strain-Gages
Backing Resistive Wires
Direction of strain
Con
nect
ing w
ires
T
Strain Gage
Beam
Solid (fixed) platform
A bonded gage Fixing the gage
Examples of bonded gages
Resistance-wire type Foil type Helical-wire type
K 2.0
R0 = 120 or 350 . 600 and 700 gages are also available
Semiconductor strain-gage units
Unbonded, uniformly doped
Diffused p-type gage
20
Fixing the gage
T
Strain Gage
Beam
Solid (fixed) platform
21
22
Strain gage on a specimen
23
The unbonded gage
Poles
Prestrained resistive wire
Unbonded strain-gage pressure sensor
25
Example 2A strain gage has a gage factor 2 and exposed to an axial strain of 300 m/m. The unstrained resistance is 350 . Find the percentage and absolute changes in the resistance.
a = 300 m/m = 0.3x10-3; R/R = Ka = 0.6x10-3 yielding %age change = 0.06% and R = 350x0.6x10-3 = 0.21 .
26
Example 3A strain gage has an unstrained resistance of 1000 and gage factor of 80. The change in the resistance is 1 when it is exposed to a strain. Find the percentage change in the resistance, the percentage change in the length and the external strain (m/m).
R/R (%) = 0.1 %; L/L (%) = [R/R (%)]/K = 1.25x10-3%, and a = [L/L (%)]/100 = 1.25x10-5 = 12.5 m/m
Wheatstone bridge for the pressure sensor
Integrated pressure sensor
Integrated cantilever-beam force sensor
Elastic strain-gageMercury-in-rubber strain-gage plethysmography (volume-measuring) using a four-lead gage applied to human calf.
Venous-occlusion plethysmography
Arterial-pulse plethysmography
Effect of Temperature and Strain in other Directions
)](1[ 00 TTRR R0 is the resistance at T0 and is the temperature coefficient
This is very much pronounced in case of semiconductor gages due to high temperature coefficient.
Effects of wanted strain (sw), unwanted strain (su) and temperature (T) add up in the change in resistance as
R = Rsw + Rsu + RT
The effect of unwanted strain and temperature must be eliminated before the resistance change is used to indicate the strain
Bridge Configurations For Strain Gage Measurements
Solid platform
Cantilever
Strain gage
Q
W
Eb A
B
C
D
R1 R2
R3 R4 = Rx
Rg
Ig
The cantilever beam with a single strain-gage element
A quarter bridge
Analysis of quarter-bridge circuit
)2(2))(()(
))((
2
3241
31420 RR
RE
RRRRRRRRR
ERRRR
RRRREE bbb
Let R1 = R2 = R3 = R and R4 = Rx = R + R = R(1 + R/R), and let x = R/R. The open circuit voltage E0 = 0 at balance (R = 0). At slight unbalance (R 0)
Let x = R/R )
21(4)2(20 x
xE
xx
EE bb
...42
1)2
1(2
1 xxx...)
42(
4
32
0 xxxEE b
Since x<<1, higher order terms can be neglected yielding R
REx
EE bb
440
Sensitivity analysis can also be used
241
1
4
0
)(4 RRRE
RES bR
RRER
RRRESRE b
bR
4)( 240 4
Sensitivity analysis
Effect of Temperature and Tensile Strain
• R = RQ + RW + RT • The effect of unwanted strain and temperature must be
eliminated. • The circuit as it is provides no compensation.• Using a second strain gage of the same type for R1 can
compensate effect of temperature. • This second gage can be placed at a silent location
within the sensor housing, hence kept at the same temperature as the first one.
• As a result, both R1 and R4 have the same amount of changes due to temperature that cancel each other in the equation yielding perfect temperature compensation
36
Wheatstone Bridge with Strain Gages and Temperature Compensation
Bridge with Two Active Elements
Cantilever
Strain gages
Q
W
The cantilever beam with two opposing strain gages
Eb A
B
C
D
R1 R-R R2
R3 R4
R+R
Rg
Ig
Circuit for the half-bridge
Circuit analysis
Let R2 = R3 = R; R1 = R - R; R4 = R + R, the open circuit voltage E0 = 0 at balance (R = 0). At slight unbalance (R 0)
))(( 3241
31420 RRRR
RRRREE b
))(()()(RRRRRR
RRRRRREb
RRE
RRE b
b
24
2
Eb A
B
C
D
R1 R-R R2
R3 R4
R+R
Rg
Ig
Insensitivity of half-bridge Wanted
strain Unwanted
strain Temperature
R4
R1
Effects of wanted and unwanted strains and temperature on measuring gages
Bridge with Four Active Elements (Full Bridge)
The force, when applied in the direction shown, causes tension on gages at the top surface (R + RQ) and compression on gages at the bottom surface (R - RQ).
The tensile force W causes (R + RW) on all gages.
The temperature also produces (R + RT) on all gages.
Q
W R1
R2 R4
R3
The cantilever beam with four strain gages (full bridge)
Eb A
B
C
D
R1 R-R
R4 R+R
Rg
Ig
R3 R-R
R2 R+R
• The strain gages that are working together are placed into opposite (non-neighboring) arms of the bridge.
• The strain gage resistors are manufactured for a perfect match to have the open circuit voltage E0 = 0 at balance (R = 0).
• At slight unbalance (R 0) with R1 = R3 = R - R; R2 = R4 = R + R
))(( 3241
31420 RRRR
RRRREE b
RRE
RRRRRRRRRRRRRRRRE bb
))(())(())((
L = n2G, where
n= number of turns of coil
G = geometric form factor
= effective permeability
Self-inductance
Inductive sensors
Mutual inductance
Differential transformer
LVDT transducer
(a)electric diagram and
(b)cross-section view
LVDT
Capacitive sensors +QQ
x Area = A
xAC r0
dv/dt
i
1
C +
Cv
i
(a ) (b )
Capacitive displacement transducer
(a)single capacitance and (b)differentialcapacitance
20 xA
xCKysensitivit r
xdx
CdC
orxC
dxdC
0
0
00
1
)(
)()(
xARRCwhere
j
jxE
jXjV
r
I
Capacitive sensor for measuring dynamic displacement changes
Piezoelectric sensors
kfq k is piezoelectric constant C/N
Akfx
Ckfv
r 0
Kxq
K is proportionality constant C/m
RCs iidtdxK
dtdqi
Rv
xtdxK
dtdvCii
dtiC
vv
Rs
CC
00
0
)(
)1(
1)()(0
jjK
jXjV S
KS=K/C, V/m; = RC, s
Response to step displacement
High-frequency response
High-frequency circuit model for piezoelectric sensor. RS is the sensor leakage resistance and CS the capacitance. Lm, Cm and Rm represent the mechanical system.
Piezoelectric sensor frequency response.
51
Quantum Tunneling Composites
(a) Structure (b) Effect of pressure
Structure and effect of pressure for QTC
52
Effect of Pressure on a QTC Pill
53
QTC as a Pressure Sensor