bai tap dt cao tan lan 1 bai 6.10 va 9.10

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  • 7/28/2019 Bai Tap DT Cao Tan Lan 1 Bai 6.10 Va 9.10

    1/2

    6.10 for 2 pn-diodes with abrupt junction, one of which is made of Si and the

    another is made of GaAs, with NA =1017cm- 3 and ND = 2 10

    14cm- 3 in both cases:

    a) Find the barrier voltage

    b) Find the maximun electric field and the space charge region width.

    c) Plot the space charge, potential, and electric field distribution along the

    diode axis

    Solution:

    a) The barrier voltage in both cases is found. For Si we obtain

    Vdiff=Vt lnNAND

    ni2

    = 0.65V, and for GaAs the result is Vdiff =1.12V

    b) The maximum electric field in the junction is found by setting x = 0.

    Subtituting the values for Si it is seen

    EO =qNAeReO

    dp

    where the space charge region width in the p-semiconductor is found

    dp(Si) =2e VdiffNDqNA

    1

    NA +ND

    = 4.110- 7cm

    dp(GaAS) =2e VdiffNDqNA

    1

    NA +ND

    = 5.710- 7cm

    Subtuting the values into the formula for the peak electric field we find

    that in Si it is equal to EO = 6.4 103(V / cm)and for GaAs SO = 7.9 10

    3(V/ cm) .

    c) The distributions of the space charge, potential, and electric field areidentical to the figure 6-5 c - e

    9.10

    A BJT is operated at f= 750MHz(and with the S-parameters as follows:

    S11 = 0.56 - 78O,S12 = 8.64 122

    O ,S21 = 0.05 33O,S22 = 0.66 - 42

    O). Attempt to

    stabilize the transistor by finding a series resistor or shunt conductance for the

    input and output ports.

    Solution

    In this problem, the values ofS12 and S21should have been reversed

    S12 = 0.05 33O,S21 = 8.64 122

    O. We first investigate and find that the transistor

    does not meet the requirements of unconditional stability.

    In fact,

    k=1 - S11 2 - S22 2 + D 2

    2 S12 S21= 0.6322, D = 0.5435

    Then we plot the input and output the stability circuit then we got the result

    gin'=

    2.0

    Gin'=gin

    '

    50W = 0.04Sfor the output resistance

  • 7/28/2019 Bai Tap DT Cao Tan Lan 1 Bai 6.10 Va 9.10

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    rout'

    = 0.8Rout'

    = 0.75 50W = 37.5W Using this resistance value, we can re-check the stability requierments by first

    converting the output index into ABCD network representation followed by pre-

    multiplication by converted S-parameter of the transistor. The resulting new set

    of ABCD parameters is reconverted into a new parameter form and check for

    stability below

    The result is now : K=1.018 >1 and D = 0.5435