automotiva discrete solution

8/14/2019 Automotiva Discrete Solution

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High quality and innovation

Automotive discrete solutions


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Automotive discrete solutions

As automotive manufacturers strive for convenient body applications, new

safety systems, infotainment systems, and efficient powertrain solutions,

the semiconductor content of vehicles is rising and electronic systems arebecoming more complex. Consequently, semiconductor suppliers must

meet increasingly severe requirements.

Benefit from our experience

NXP is the global leader in automotive MOSFETs and a global supplier of

small-signal discretes with more than 50 years experience in developing

and producing diodes and transistors.

Airbag control

}Low VF(MEGA) Schottky rectifier

}Low VCEsat

(BISS) transistors

}General-purpose transistors

}Switching diodes

Body Control Unit

}Low VF(MEGA) Schottky diodes

}Low VCEsat(BISS) transistors}MOSFETs

}TVS and ESD protection diodes

}Shunt regulators

Interior lighting}Low V

F(MEGA)

Schottky rectifier

Door module

}Low VF(MEGA)

Schottky rectifier

}Low VCEsat

(BISS)

transistors

}Small-signal

MOSFETs

}General-purpose

transistors}ESD protection

diodes

Fuel injection

}Power MOSFETS

}TVS

BS module

Low VF(MEGA)

Schottky rectifier

Low VCEsat

(BISS)

transistors

ESD protection

diodes

Daylight beam

}Low VF(MEGA)

Schottky rectifier

Automotive power

}TVS diodes

}Low VF(MEGA) Schottky diodes

}Low VCEsat(BISS) transistors}Wide range of automotive grade Power MOSFETs:

- Steering

- Braking / stability

- Body control

- Engine management

- Fan control

- Transmission

- Water pump

Automotive networking

}ESD protection diodes

e.g. MMBZ and PESDXCAN-series


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Combining our expertise in both automotive and discrete

solutions, we offer an extensive portfolio of discrete

components from small-signal to power. We help automotivesystem suppliers meet the rigorous and diverse technical

demands of automotive electronics by focusing on four

key elements high automotive-grade quality, sustainable

environment, secure supply and an innovative product

portfolio.

Quality

All our facilities are certified accordingto ISO / TS 16949:2002,

and our products are qualified with respect to

AEC-Q 100/101 stress test qualification for automotive-

grade discrete semiconductors. We offer full support onQS9000 based PPAP documentation, and our Zero Defects

Breakthrough Program is part of NXPs excellence approach.

The Green Car

NXP has enabled innovative breakthroughs that have led to

significant efficiency improvements. As the car evolves from

the internal combustion engine through micro- and mild-

hybrids to full electrical vehicles, the only differences in the

driving experience for drivers and passengers should be

positive. And as an innovative leader in discrete solutions, our

semiconductors are helping this happens.

Supply

Our manufacturing facilities are fully vertically integrated

and deliver optimized high-volume production. We offer the

highest capacity in the industry for various packages, including

SOT23 and LFPAK, and make continuous investments in new

capacities. Were safeguarding the long-term availability of

our manufacturing processes and products, so our automotive

customers can count on a secure supply.

Product innovationProduct innovation is based on three key innovation drivers:

1) improve power efficiency, 2) offer system protection

solutions, and 3) provide miniaturization and integration

to simplify design and reduce costs. We lead the way with

power-efficient low VCEsat

(BISS) transistors and low VF(MEGA)

Schottky rectifiers, and have dedicated protection solutions for

automotive networking

The leading supplier

Automotive trend Requirements for discretes NXP discrete solutions

More electronics, more power,

lower losses

Power up, losses down

Low VF(MEGA) Schottkys, low V

CEsat(BISS)

transistors, power and small-signal MOSFETs

medium power capability in smallest

packages, low power consumption

More electronics, thus more

ESD-sensitive interfacesIncrease ESD robustness

ESD protection portfolio, 1-18 lines,

High ESD robustness up to 30 kV,

dedicated automotive bus protection

Proven quality standards

Highest product reliability

AEC-Q100/101 compliance

Long-term supply guarantee

Continuous certification program,

zero defects breakthrough program,

robust, mature technologies and processes

Focus on cost Integration of functions

Broad range of integrated products:

diode arrays, double transistorsmatched pair transistors, Resistor-equipped

transistors (RETs), low VCEsat

(BISS) loadswitches

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Package innovations

Key applications of TVS diodes

}Power supplies / power management

}Surge protection

}Free wheeling diode for relay coil

Key applications of Schottky rectifiers

}Power management circuits, especially DC/DC converters

}Reverse polarity protection

}Free-wheeling diodes for inductive loads in motors and

relays

Package size

}Very flat and small packages

- SOD128 (3.8 x 2.5 x 1.0 mm)

- SOD123W (2.6 x 1.7 x 1.0 mm)

Key benefits

}Highest values for surge and power capability due to

clip-bond technology

}Low height for economic use of space

}AEC-Q101 qualified

}Pad layout compatible with SMA and SMB for easy

drop-in replacement

}Minimized outline and reflow soldering footprint

}Non-flammability classification UL 94V-0 and RoHS standards

compliance (Dark Green)

Key features and benefits

}Broad portfolio, supports all kinds of applications

}From 2 pin to 6 pin options

}Reduced size enables higher integration for smaller designs

}From very small (SOD882D: 1 x 0.6 x 0.37) to

medium-power packages with Ptot

= 1 W (SOT1061 and

SOT1118: 2.0 x 2.0 x 0.65)

}Broad portfolio with AEC-Q101 qualification

}Non-flammability classification UL 94V-0 and RoHS standards

compliance (Dark Green)

}SOD882D with solderable side pads for improved opticalinspection (AOI)

FlatPower packages

NXPs new FlatPower packages with clip-bond technology meet thedemand for thinner products with high power capabilities. Today a range of

28 medium-power, low VFrectifiers and 70 TVS diodes are housed in new

SOD123W and SOD128. They offer high power ratings similar to standard

SMA/SMB packages but occupy only half of the PCB area.

Leadless packages

We offer a very broad range of discrete functions in various leadless packages. Functions include

ESD protection, Zener, Switching, and Schottky diodes, low VCEsat

(BISS), Resistor-Equipped

Transistors (RETs), MOSFET solutions.


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LFPAK

Key benefits

}Low inductance

}Low thermal resistance

}Dimensions comparable to SO8

}Significantly thinner than SO8 & DPAK

}

Wirebond free - Cu clip design}High current transient robustness

}Avalanche Robust up to Tj(max)

}100% avalanche tested

}Automotive AEC-Q101 qualified to 175 C

}Leads are optical-inspection friendly

Target applications for LFPAK products

}Engine and transmission controllers

}Advanced braking systems

}Coolant pumps

}DC-DC converters

}Reverse battery protection

}General-purpose automotive switching where space is at a

premium

*1 x 300 m bond wire

LFPAK (SOT669) for high-density applications

NXP MOSFETs housed in the compact, thermally-enhanced

Loss Free PAcKage (LFPAK) are optimized for high-density

automotive applications. LFPAK delivers the ultimate

combination with ultra-low package resistance, superior

reliability and thermal performance. All this in a very smallpackage that ensures you can put power where you need it

most, anywhere in the car.

In automotive systems space is becoming a key issue,

especially under the hood. Todays MOSFETs need to provide

the absolute best thermal performance possible to enable

switching of loads requiring significant currents. In answer to

this, NXP has introduced the LFPAK to ensure a superior level

of on-resistance and thermal performance in an extremely

compact housing. The combination of NXPs TrenchMOS

technology and LFPAK delivers compact power to manyapplications that previously were limited to only large discrete

power packages.

The LFPAKs copper source clip design overcomes the

limitations of the standard SO8, resulting in thermal resistances

comparable to that of bigger packages such as DPAK. In

a traditional power package the main thermal pathway is

vertically down through the mounting and into the PCB.

However, the LFPAK also conducts a significant amount of heat

upwards and out through the source lead.

Fully qualified to meet the rigorous demands of the AEC-Q101

standard for discrete devices, these new products are aimed

at a variety of applications where size, thermal performance

and low cost manufacturing processes are critical design

considerations.

LFPAK case temperature is significantly lower than two SO8 packages, and

similar to single DPAK ( 1 W power dissipation on all three packages )

Real-estate benefits of using LFPAK

PCB area reduced

by more than 45%

LFPAK thermal conduction

Comparison between typical wirebonds and clip design

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PCB PCB

Chip Plastic2 Part Leadframe

Package Lead/Wire Res (m)

LFPAK 0.31

DPAK* 2.21


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Power MOSFETs

Small-signal MOSFETs

NXP offers a highly flexible approach to power design for automotive systems.

NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depthunderstanding of automotive applications means NXP can deliver power semiconductor solutions

from its wide range of standard products or its capability to create unique custom offerings to

meet customer specific requirements.

Features and benefits

AEC Q101 compliant

Low conduction losses due to very low on-state resistance

Suitable for logic and standard level gate drive sources

Suitable for thermally demanding environments due

to 175 C rating

Applications

12 V automotive systems

Start-Stop micro-hybrid applications

Electric and electro-hydraulic power steering

Motors, lamps and solenoids

Transmission control

Our advanced MOSFET solutions deliver the flexibility and performance that todays marketdemands. Choose from a wide range of general-purpose MOSFET solutions : The N- and

P-channel enhancement mode Field-Effect Transistors (FET) are using Trench MOSFET technology

and are offered in various small SMD packages - from SOT23 down to the very small SOT883

(1 x 0.6 x 0.5 mm).


}AEC-Q101 qualified

}Logic-level compatible

}Trench MOSFET technology}Including types with ESD protection up to 3 kV

}Very fast switching

Applications

}High-speed line driver

}High/Low-side load switch e.g. motion control

}Relay driver}Switching circuits

}Fuel injection


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ESD protection diodes

NXP offers a series of ESD protection diodes specifically designed to protect

FlexRay bus, Controller Area Network (CAN) and Local Interconnect Network (LIN)

transceivers, as well as other ESD sensitive automotive electronic components.

In addition to human body protection according to MIL-STD-883 class 3,

these products comply with both IEC 61000-4-2 level 4 (air and contact discharge)

as well as IEC 61000-4-5 standards.

The PESD1LIN offers best-in-class ESD protection of one LIN bus line. The asymmetrical diode

configuration ensures optimized electromagnetic immunity of LIN transceivers.

Key features

ESD protection up to 30 kV

Excellent ESD clamping behavior

High peak pulse power (8/20 s)

performance

Ultra low leakage current

Low device capacitance

Key benefits

Increased system ESD robustness

Optimized protection with lowclamping voltages and fast response

times

Reduced overall power consumption

due to ultra low leakage current

Low device capacitance to avoid

unwanted circuit disturbances

Key applications

Automotive bus protection

Data and audio interfaces, e.g.car multimedia line protection

Overvoltage protection, e.g. airbag

controllers, ABS, ESC

Car drivers interface protection,

e.g. dashboard panels

LIN

Key features PESD1LIN

Bidirectional protection of one LIN bus line

in a very small SOD323 (SC-76) SMD plastic package

Max. peak pulse power: PPP

= 160 W at tp= 8/20 s

Low clamping voltage: V(CL)R

= 40 V at IPP

= 1 A

Ultra low leakage current: IRM< 1 nA

ESD protection of up to 23 kV

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LINTransceiver

PESD1LIN

CMASTER/SLAVE

CBAT

24 V

Application (e.g. voltage regulator and microcontroller)

Power Application (e.g. electro motor, inductive loads)LIN Node

Connector

15 V

BAT

GND

LIN


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CAN

PESD1CAN and PESD2CAN provide bidirectional protection of two CAN bus lines with one single

SOT23 component. They can be used for both high speed and fault-tolerant CAN bus protection.

Key features PESD1CAN Bidirectional protection of two CAN bus

lines in one small SOT23 package

Very low capacitance CD= 11 pF


Key features PESD2CAN

Bidirectional protection of two CAN bus


Max. peak pulse power: PPP

= 230 W at tp= 8/20 s

Low clamping voltage: V(CL)R

= 34 V at Ipp

= 1 A


FlexRay

PESD1FLEX protects advanced FlexRay system

solutions supporting the high data rate

of 10 Mbits/s.

Key features PESD1FLEX

Bidirectional protection of two FlexRay bus


Very low capacitance CD= 11 pF at V

R= 0 V, f = 5 MHz

Ultra low leakage current: IRM

< 1 nA


MMBZ series

These device offer single line bidirectional ordual-line unidirectional transient overvoltage

protection in a small SOT23 package.

Key features

Common cathode or common anode configuration

Max. peak pulse power: Ppp

= 40 W at tp= 10/1000 s

Ultra-low leakage current: IRM

< 1 nA

ESD protection of up 30 kV

bra519

CG

CAN BUSTRANSCEIVER CAN

bus

PESD1CAN

PESD2CAN

SPLIT

2

3

1

RT/2

RT/2

CANH

CANLcommon

mode choke(optional)

006aab053

FlexRay

TRANSCEIVER

FlexRay

bus

common

mode choke

(optional)BM

RT/2

RT/2

CG

PESD1FLEX

BP

2 1

3

Example MMBZ series application


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TVS diodes

Housed in very flat SOD128 or SOD123W packages, these Transient Voltage Suppressor (TVS)

diodes save board space while guaranteeing industry-leading surge protection up to 600 W.


}High Power rating: 400/600 W peak pulse

}Small plastic packages SOT23/SOD123W/SOD128

}Very high surge/PCB area ratio

}Very low reverse leakage current (down to

1 A typical)

}Dark Green packages free of halogens and

antimony oxides

}AEC-Q101 qualified

Key applications

}Power supplies /

power management

}Surge protection

}Free wheeling diode

for relay coil

Low VCEsat

(BISS) Transistors

Key features

Reduced thermal and electrical

resistance

Low collector-emitter saturationvoltage V

CEsatdown to 30 mV

Up to 8 A collector current capability IC

Up to 20 A peak collector current ICM

High current gain hFE

- even at high IC

High performance/board space ratio

AEC-Q101 qualified portfolio

Breakthrough In Small-Signal (BISS) transistors offer best-in-

class efficiency, reducing heat generated on your board, thus

providing an ideal solution in temperature critical environments.

Low VCEsat(BISS) transistors are cost-effective alternatives tomedium-power and power transistors. Current capability ranges

from 1 8 A in various plastic SMD packages.

Key benefits

Less heat generation, higher circuit

efficiency

Solution for high ambient temperatureapplications

Cost effective replacement of medium

power transistors

Increased performance from

small-signal discrete footprints

Key applications

Applications in temperature critical

environments, e.g. in engine or

dashboard mounted components) High- and low-side switches, e.g.

in control units

Medium power DC/DC conversion

Drivers in low supply voltage

applications such as fans and motors

Inductive load drivers, e.g. relays,

buzzers

MOSFET drivers

DC/DC converter

MSD923

CONTROLLER

VCC


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0

RETs - Resistor-equipped transistors

Key features Transistor and two resistors

integrated in one package

Broad 100 mA product range in various

packages

500 mA portfolio with several resistor

combinations in SOT23 and SOT457

(SC-74)

BISS RET portfolio in SOT23,

PBR series

AEC-Q101 qualified

Complete range of Double RET inSOT363/457

NXP offers an extensive portfolio of single and double 100 mARETs for standard small-signal digital applications.

For requirements at higher currents, 500 mA RETs and BISS RETs

combine a transistor with two resistors to provide an integrated

solution for digital applications in automotive systems, for

example control units.

Key benefits

Lower handling and inventory

costs

Reduced board space

Shorter assembly times and

reduced pick-and-place efforts

Simpler design process

Increased system reliability due

to fewer soldering joints

Key applications

Digital applications

Switching loads, e.g. for instrument

clusters

Controlling IC inputs, e.g. in engine

control units

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R1control

input

power

supply

R2

R3

R4

Rload

Tr1Tr2

High-side switch

Low VF(MEGA) Schottky rectifiers

Maximum Efficiency General Application (MEGA) Schottky rectifiers offer extremely low forward

voltage drop during operation, resulting in high efficiency and reduced heat generation. Availablein various SMD package options from FlatPower SOD128 to the smallest leadless SOD882D

(1 x 0.6 x 0.37 mm).

Key features

Up to 5 A continuous current

capability IF

Ultra low forward voltage drop VF

Low reverse current IR

Low power dissipation

Integrated guard ring forstress protection

AEC-Q101 qualified portfolio

Key benefits

Low losses over the entire

current range

Less heat generation and therefore

increased reliability

Reduced board space

Increased performance from

small-signal discrete footprints

Key applications

Power management circuits

especially DC/DC conversion

Various rectifier circuits, e.g.

in airbag control units

Free wheeling diode for inductive

loads in relays and motors

Reverse polarity protection


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Standard Linear

Key benefits

Any output voltage in the given range can be set by just two

external resistors

Simple solution to achieve a stabilized voltage

3 versions: extra EMI ruggedness, enhanced stability area,

and standard version

Active output circuit for low temperature drift Low output noise

Key features

}Programmable output voltage from 2.5 V to 36 V

3 different voltage tolerances down to 0.5%

Typical output impedance of only 0.2

AEC-Q100 (Grade 1) qualified

Key applications Shunt regulator for a wide voltage range

Precision current limiter

Precision constant current sink

NXPs portfolio extension in 2011 includes TLVH431, shunt regulator in SOT23 with Vin= 20 V

max and V

REF= 1.24 V.

Voltage regulators in SOT223: NX1117 with max output current of 1A, adjustable from 1.25 V up to 18 V and several fixed output

voltage versions 1.2 - 12 V as well as the new automotive LDO NXV426x series.

NXPs portfolio of standard linear devices includes precision shunt-, and linear low drop-out

voltage regulators. The TL431 three-terminal shunt regulator family with an output voltage range

between VREF

= 2.5 V and 36 V, is to be set by two external resistors.

006aab592

VOUT

R1

R2

V+

VREF

TL431 shunt regulator


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www.nxp.com

2010 NXP Semiconductors N.V.All rights reserved. Reproduction in whole or in part is prohibited without the

prior written consent of the copyright owner. The information presented in

this document does not form part of any quotation or contract, is believed

to be accurate and reliable and may be changed without notice. No liability

will be accepted by the publisher for any consequence of its use. Publication

thereof does not convey nor imply any license under patent- or other

industrial or intellectual property rights.

Date of release: November 2010Document order number: 9397 750 17007

Printed in the Netherlands

automotiva discrete solution

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