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International Journal of Engineering & Technology IJET-IJENS Vol:14 No:02 24
142502-6868-IJET-IJENS © April 2014 IJENS I J E N S
Abstract— one of the most common forms of failures
observed in brittle thin films subjected to stress is cracking. The
crack growth rate depends on intrinsic film properties, stress and
some environmental factors. we investigate central crack on
different material planes. The planes are made from silicon,
copper, aluminum, polyamide and silicon nitride. Each plane is
1.0m x 0.4m and has a crack length of 0.04m. Because of
symmetry only 0.5m and o.2m of the plate is used. They are
subjected to a normal stress of 100MPa. A two dimensional (2D)
Finite Element Analysis (FEA) model is developed and ANSYS
software is used to calculate the MODE I Stress Intensity Factor
(SIF) on each material plane. Silicon had a SIF of 21.562,
aluminum 23.838, copper 23.383, polyamide 24.948 and silicon
nitride 22.371. From the results, silicon had the lowest MODE I
SIF while polyamide had the highest.
Index Term— ANSYS, Flipchip, Interconnect, Stress
Intensity Factor (SIF)
I. INTRODUCTION
Multi silicon dies stack is required for higher performance,
greater package miniaturization and more functionality
electronic device. Silicon passivation cracking and
interconnect metal thin film cracking are organic packaging
failure modes which occur due to global thermal expansion
mismatch between the package and the silicon and also local
thermal expansion mismatch among interconnect metals and
passivation materials .Experimental data have shown that
some properties have to be considered before designing an IC
to minimize the risks encountered due to thermal mismatch.
Some of these properties include: the size of the chip, the
(Interlayer Dielectric) ILD material and also the number of die
layers. We used ANSYS 14.0 to analyze MODE I SIF on the
different materials used.
II. LINEAR ELASTIC STRESS ANALYSIS OF 2D CRACKS
Homogeneous and isotropic materials with cracks have
stress surrounding the crack tip analyzed assuming linear
elastic material behavior. Linear Elastic Fracture Mechanics
(LEFM) method assumes the plastic region near crack tip is
much smaller than the dimensions of the crack and the
structural member. This is a very important concept, scientists
and engineers call it small-scale yielding [1], since it
simplifies stress analysis near the tip. Assuming the geometry
has very small displacement and the material is elastic,
homogeneous and isotropic. The governing equations for
linear elastic analysis in 2-D are:
The strain-displacement relationships:
(1)
(2)
*
+
(3)
The stress-strain relationships:
For plane strain, where
( )( )[( ) ]
(4)
( )( )[( ) ] (5)
(6)
( )
(7)
For plane stress, where
[ ]
(8)
[ ]
(9)
(10)
( )
(11)
Assessing Central Cracks and Interconnect
Reliability in Flipchips
Juma Mary Atieno, Zhang Xuliang
International Journal of Engineering & Technology IJET-IJENS Vol:14 No:02 25
142502-6868-IJET-IJENS © April 2014 IJENS I J E N S
The equilibrium equations:
(12)
(13)
The compatibility equation:
*
+ ( )
(14)
The Airy stress function, Φ, can satisfy all the governing
equations and is used to derive the stress field near the crack
tip.
√ ⁄ (
)
(15)
(16)
Solving Eq. (16) yields the stress fields for Mode I as:
√
*
+
(17)
√
*
+
(18)
√
(19)
( )
(20)
(21)
The displacement fields are:
√
*
+
(22)
√
*
+
(23)
(24)
The coordinates (r, θ) for the stress components are shown
in Fig. 1.
Fig. 1 Coordinate systems for the stress components [1].
III. CALCULATION OF STRESS INTENSITY FACTORS (SIF)
USING THE FINITE ELEMENT METHOD
Several publications have discussed the stress intensity
factor and methods involved in its calculation. Enough
literature exists addressing the analysis procedure for
structures made of composites [2]. In unidirectional fiber
composites, the behavior of cracks aligned along the fiber is
well characterized by the SIF [3]. Different experimental
techniques have been used in the past to determine the SIF for
cracks in composites by various researchers. Singular stress
field in the neighborhood of the periphery of an annular crack
was studied by Gdoutos et al. [4]. The case of fiber debonding
originating from the annular crack was also considered. In the
study, they calculated KI and KII stress intensity factors and
energy release rates. The energy release rate was derived by
Liu and Kagawa [5] for an interfacial debonding of a crack in
a ceramic-matrix composite and they used the Lame solution
for an axisymmetric cylindrical fiber/matrix model. A
numerical solution was carried out for the problem of interface
crack by Aslantas and Tasgetiren [6]. Variations in the stress
intensity factors KI and KII, with load position were obtained
for various cases such as different combinations of material of
coating layer and substrate, changes in the coefficient of
friction on the surface. Xia et al. [7] analyzed fatigue crack
initiation in SiC fiber (SCS-6) reinforced titanium on the basis
of a finite element model. Their results showed that the
formation of matrix crack largely depends on the applied
stress and reaction layer thickness. A new method that obtains
the complex stress intensity factor was presented by Bjerken
and Persson, [8] for an interface crack in a bimaterial using a
minimum number of computations. Dirikolu and Aktas [9]
carried out a comparative study regarding the determination of
stress intensity factors for nonstandard thin composite plates.
Carbon-epoxy composite plates were also considered for the
study.
Various methods have been used for the determination of
stress intensity factors [10], [11], [12], [13] and [14].One of
these methods is a numerical method like Green's function,
weight functions, boundary collocation, alternating method,
integral transforms, continuous dislocations and finite
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elements methods. In this paper, we used the finite elements
method to calculate the KI of five different materials used in
flipchip packaging.
TABLE 1
MATERIALS PROPERTIES
Material Young Modulus
(GPa)
Poisson’s Ratio
Silicon 150 0.17
Aluminum 70 0.33
Copper 110 0.33
Silicon nitride 166 0.23
Polyamide 2.1 0.4
IV. RESULTS AND DISCUSSION
Based on the above materials properties, we give the
simulation results and discussions obtained from ANSYS
GUI.
Silicon elements distribution along the cracks on silicon plate
Fig. 2 Silicon elements
Elements, nodes, keypoints and areas used in cracked silicon plate simulation
Fig. 3 Silicon output window
MODE I, II and III SIFs values along the crack on silicon plate
Fig. 4 Stress intensity factor in silicon
Aluminum elements distribution along the cracks on aluminum plate
Fig. 5 Aluminum elements
Elements, nodes, keypoints and areas used in cracked aluminum plate
simulation
Fig. 6 Aluminum output window
MODE I, II and III SIFs values along the crack on aluminum plate
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Fig. 7 Mode I SIF of Aluminum
Elements number and distribution on cracked polyamide plate
Fig. 8 Elements in polyamide
Number of elements, nodes, lines and areas used in the cracked polyamide simulation
Fig. 9 Output window for polyamide
MODE I, II and III SIFs values along the crack on polyamide plate
Fig. 10 Mode I SIF for polyamide
Elements number and distribution on cracked copper plate
Fig. 11 Elements in copper crack region
Number of elements, nodes, lines and areas used in the cracked copper
simulation
Fig. 12 Output window of cracked copper
MODE I, II and III SIFs values along the crack on copper plate
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Fig. 13 Mode I SIF of copper
Elements number and distribution on cracked silicon nitride
Fig. 14 Elements in cracked silicon nitride
Number of elements, nodes, lines and areas used in the simulation
Fig. 15 Output window of cracked silicon nitride
MODE I, II and III SIFs values along the crack on silicon nitride plate
Fig. 16 Mode I SIF of cracked silicon nitride
The results and discussions of each material type we used in
the simulation of the central holes in silicon, copper,
aluminum, polyamide and silicon nitride are discussed in
details.
The output windows were of real relevance to us since they
showed the specifications we put in the system for the analysis
to take place. In this paper, we used 94 elements, 95 nodes, 5
keypoints, 5 lines and 1 area. We only used a single area
which was rectangular and because of symmetry, we used
only half of the area for simulation. The numbers of nodes
used as shown by the output windows for each material are the
same. This is because we used the same plate size with the
same crack position and length.
We used KCALC command to get the mode I SIFs of each
material used. Only one specific value of SIF for each material
is given. Since our focus for this paper was mode I SIF, the
mode II and III SIFs for each material used is noted to be zero.
This is clearly shown by the KCALC diagrams for each
material used. Silicon material had the lowest MODE I SIF of
21.562 while polyamide which is a dielectric material had the
highest MODE I SIF of 24.948. We noted that copper and
aluminum had the same values of MODE I SIF of 23.838
each. Silicon nitride had a MODE I SIF of 22.371. In general,
the MODE I SIFs of the materials we used ranged from 21 to
25.
V. CONCLUSION AND RECOMMENDATIONS
In this project, we investigated cracks in flipchip package
using different materials namely silicon, aluminum, copper,
polyamide and silicon nitride using ANSYS release 14 and 2D
FEA model. The first step involved the design of the
rectangular plate with a central crack on each material plate.
We used material plates of sizes 1.0m by 0.4m. The crack
length on each plate was 0.04m. Because of symmetry, only
half the plate was relevant for simulation. GUI then did the
simulation of the different plate materials based on the
materials properties such as Poisson’s ratio and young’s
modulus. The output window showed the total number of
nodes used in the simulation. In this paper, a total of 95 nodes
were used on each material to mesh 94 elements. It is evident
that the nodes number is higher than the elements number
because the nodes are the ones which join to give the elements
so the elements number cannot be higher than that of nodes.
International Journal of Engineering & Technology IJET-IJENS Vol:14 No:02 29
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We performed the elastic stress analysis using the KCALC
command. We observed that different materials used had
different MODE I SIFs. Silicon material had the lowest
MODE I SIF of 21.562 while polyamide which is a dielectric
material had the highest MODE I SIF of 24.948. We noted
that copper and aluminum had the same values of MODE I
SIF of 23.838 each. In general, the MODE I SIFs of the
materials used ranged from 21 to 25. The table below
summarizes the MODE I SIFs of the five materials we used in
this project.
TABLE II
Summary of results for all the materials used in the project
Material Young’s Modulus (GPa)
Poisson’s ratio MODE I SIF
Silicon 150 0.17 21.562
Aluminum 70 0.33 23.838
Copper 110 0.33 23.838
Polyamide 2.1 0.4 24.948
Silicon nitride 166 0.23 22.371
The recommendations we made on this project include:
Copper and aluminum can be used interchangeably
where mechanical strength is concerned since they have
the same MODE I SIF.
Silicon is the best material as per this project to be used
as a chip in flipchip ball grid arrays since it has the
lowest SIF.
When dielectric materials are selected for use, Silicon
nitride should be considered more than polyamide since
it has a lower MODE I SIF.
MODE I SIF can be used to categorize materials
according to their mechanical strength. Those with
lower SIFs can be considered stronger than those with
higher SIFs.
With more material properties integrated, more precise
results will be achieved and other parameters apart from
stress and deformations. These approaches will help
curb cracking problem in chips therefore making
electronic devices more reliable in the market. The
electronic devices can also be used for a longer period
of time and the problem of repair will be solved.
APPENDIX
List of symbols
E = Modulus of Elasticity (GPa)
v = Poisson’s Ratio (-)
ε = Strain (-)
u = Displacement (mm)
σ = Normal Stress (GPa)
τ = Shear Stress (GPa)
G = Shear Modulus (GPa)
Φ = Airy Stress Function (kN)
K = Stress Intensity Factor (GPa √ )
a = crack length (mm)
P = geometrical parameter depends on structural member and
crack
@ = at
Step by step inputs in cracked polyamide plate simulation
Fig. 17. ANSYS central crack Input File for polyamide
Step by step inputs in cracked silicon nitride plate simulation
Fig. 18. ANSYS central crack Input File for silicon nitride
International Journal of Engineering & Technology IJET-IJENS Vol:14 No:02 30
142502-6868-IJET-IJENS © April 2014 IJENS I J E N S
Step by step inputs in cracked silicon plate simulation
Fig. 19. ANSYS Silicon central hole input file
Step by step inputs in cracked aluminum plate simulation
Fig. 20. ANSYS Aluminum central hole input file
Step by step inputs in cracked copper plate simulation
Fig. 21. ANSYS Copper central hole input file
ACKNOWLEDGMENT
These lines I want to dedicate for giving my thanks to all
people without who this paper would have not been possible. I
want to thank my advisor, doctor Zhang Xuliang, first for
believing in me and for giving me the opportunity to work
with him on this paper, and then for being a great help during
my work, with his constant patience, useful advices and
suggestions. I am especially grateful to him for his great
personality regarding giving me professionally honest and
timely feedback to the very last day of my work. I will always
remember him .My regards also go to other lecturers in our lab
since they were of great help too by giving their contributions
towards the work. My thanks also go to my friends especially
those in the same lab who, during the rough moments like
software installation, cheered me up and gave me the strength
to go on.
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