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Arvind Ajoy #237, Krishna Hostel, Indian Institute of Technology Madras, Chennai 600036email: arvindajoy @ iitm.ac.in arvindajoy @ gmail.com

Education Indian Institute of Technology Madras Doctor of PhilosophyChennai, India July 2006, PresentSpecialization : Nano-electronicsCourse CGPA : 10.00 / 10.00Direct admission to the PhD programme, based on undergraduate performance.

Indian Institute of Technology Madras Bachelor of TechnologyChennai, India August 2002, May 2006Major : Electrical Engineering, specializing in Semiconductor DevicesMinor : PhysicsCGPA : 9.30 / 10.00

National Public School SchoolingBangalore, IndiaClass 12 : 94.8%, Class 10 : 96.4%

Declared the Best Outgoing Student of the academic year 2001-2002.Among the top 0.1% nationwide in Mathematics and Physics in Class 12, and in Mathematics,Sanskrit and Social Science in Class 10.

ScholasticAchievements

Selected to attend the Visiting Students Research Programme (VSRP) 2005 , at theTata Insitute of Fundamental Research (TIFR), Mumbai, India.

Awarded the Kishore Vaigyanik Protsahan Yojana (National Science Fellowship for Stu-dents) fellowship during 2001-2002, by the Department of Science and Technology, Govt. of India.

CurrentResearch

Nano-electronic Device Fabrication and Simulation

Experience Indian Institute of Technology Madras PhDJuly 2006, Present

Area : Simulation and Fabrication of Silicon Nanowire DevicesAdvisor : Prof. Shreepad Karmalkar, Dept. of Electrical EngineeringWorking on aspects of fabrication, characterization, simulation and modelling of Silicon Nanowires(SiNWs) and SiNW based devices. Currently developing a 3-D simulation tool to study quan-tum transport in SiNW based devices, using the Non-Equilibrium Greens Function (NEGF)technique within an effective mass approximation.

Indian Institute of Technology Madras B.Tech ProjectNovember 2005, May 2006

Title : Simulation of Two Dimensional Tunneling in Schottky BarriersAdvisor : Prof. Shreepad Karmalkar, Dept. of Electrical EngineeringDeveloped a 2-D simulation procedure to calculate Direct and Trap Assisted Tunneling currentsthrough Schottky barriers, taking into account the exact barrier prole. Implemented this pro-cedure for Trap Assisted Tunneling (TT) in an AlGaN/GaN HEMT and showed that the reversegate current increases linearly beyond saturation, with a slope that is close to that obtained frommeasured data; hence showed that the proposed simulation procedure can be used to resolve theuncertainty in reverse gate-leakage mechanism in AlGaN/GaN HEMTs.

Tata Institute of Fundamental Research VSRP FellowMumbai India May 2005, July 2005Title : Spectroscopic Ellipsometry

Advisor : Dr. Sandip Ghosh, Solid State Electronics GroupSetup a Spectroscopic Ellipsometry experiment using a Photoelastic Modulator and measuredthe complex refractive indices of GaAs and InP as a function of wavelength. Measured andidentied features in the spectrum associated with the E 0 , E 1 and E 1 + E 1 electronic interbandtransitions in these semiconductors.