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SiC Power Diodes and MOSFETs for high-‐performance power electronics applications

Kevin MatochaPresident

ARL SiC MOS Workshop18 August 2016

We acknowledge our sponsors who have supported Monolith Semi’s development of SiC diodes and MOSFETs:

• DE-AR0000442• W911NF-14-2-0112 and W911-NF-15-2-0088 • DE-SC0011395

Special thanks to Xin Wu at United Technologies, Andy Lemmon at Univ. Alabama

Acknowledgments

Monolith Semi SiC power devices

Currently focused on our Gen1 1200V SiC diode and MOSFET technology in discrete packages.

Demonstrated state-‐of-‐art performance and reliability.

We have scaled MOSFET currents to 150A single die.

We are now developing 900V technology for automotive traction drive applications.

Assembly partners

Monolith Semiconductor Inc.

• Fabless supplier of SiC MOSFETs and Schottky diodes• Leverage an automotive-‐grade silicon CMOS foundry running 6”

SiC wafers to achieve high volume and lower cost(others run on 4” wafers with half the useable area)

• SiC MOSFETs with best-‐in-‐class performance and reliability


• Device design• Process development• Characterization• Refinement & optimization

6” diameter(150 mm)

SiC epiwafer vendors Device Manufacturing

4

150 mm150 mm

Monolith | Path to Commercialization

575 mm

December 2012 Monolith Semiconductor incorporated

May 2013 Demonstrated SiC DMOSFETs, 1700V, 5.5 mΩ-‐cm2

5 Amp, stable at 225°C

December 2013Inked agreement with domestic high-‐volume 150mm silicon foundry

April 2014 Demonstrated 1700V, 10A JBS diodes fabricated on 150mm SiC wafers

August 2014Demonstrated first 150mm SiC DMOSFETs in USA

1700V, 3.1 mΩ-‐cm2 SiC DMOSFETs 40 Amp, 45 mΩ

2013 2014

December 2014Established headquarter in Round Rock, TX with full design and testing capability

2015

December 2015Formed strategic partnership with Littelfuse for product marketing and customer support

MSA12N080A Revision00.2 8

Silicon Carbide Power MOSFET

MSA12N080A1200 Volt, 80 mΩ


ØP 3.560 3.660 0.140 0.144

ØP1 7.063 7.317 0.278 0.288

L1 4.168 4.472 0.165 0.175

Q 6.043 6.297 0.238 0.248

E1 13.893 14.147 0.547 0.557

L 20.053 20.307 0.789 0.799

D2 1.063 1.317 0.042 0.052

e 5.450 0.215

E 15.773 16.027 0.621 0.631

D 20.823 21.077 0.820 0.830

D1 17.393 17.647 0.685 0.695

b2 1.903 2.386 0.042 0.052

c 0.600 0.752 0.024 0.029

b 1.073 1.327 0.042 0.052

b1 2.873 3.381 0.113 0.133

A1 2.273 2.527 0.090 0.100

A2 1.853 2.108 0.073 0.083

DIM MILLIMETERS INCHES

MIN MAX MIN MAXA 4.903 5.157 0.193 0.203

MSA12N080A – 1200V, 80 mOhm SiC MOSFET

Device Expertise | SiC MOSFETs

Monolith SiC Power MOSFETsSpecific on-‐resistance, Ron,sp

• Measures how much current can be generated for a given die size• The smaller the value, the smaller the die• The smaller the die, the lower the cost• The smaller the die, the better the switching performance

Comp A – Gen 1Comp A – Gen 2

Comp B

Monolith Semi’s SiC MOSFETs have industry-‐leading performance, particularly at high temperature.

Industry-‐leading SiC MOSFET technology

8

Comparison of 80 mOhm, 1200V SiC MOSFETs

Monolith SiC Gate Oxide Reliability

Our typical operating gate electric field is 4MV/cm (off the left-side of x-axis scale).

Project > 100 year life at 200°C+

MTT

F in

Log

10(

seco

nds)

1010 s=100 yrs

Presented @ ICSCRM 2015

We have worked with NIST to show the “intrinsic” reliability of Monolith Semi’s gate oxides.

DMOS Qualification Plan:AEC-‐Q101 is the starting point

High Temperature Gate Bias: 1200V, 80 mOhmThreshold voltage Stability – 1000 hrs, 175C

Graph Builder

VT @ 10mA (VGS=VDS)

Stress_TimeInitial 24Hrs 170Hrs 500Hrs 1002Hrs

VT @

10

mA

(VG

S=VD

S)0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

Where(50 rows excluded)

Thre

shol

d Vo

ltage

@ 1

0mA

(Vol

ts)

High-‐Temperature Gate BiasVGS=-‐10V, T=175C, 1000 hrs

High-‐Temperature Gate BiasVGS=+25V, T=175C, 1000 hrs

Less than 300mV shift in threshold voltage after 1000 hrs at 175C (+25V/-‐10V)

Graph BuilderVTH2_Id=10mAV vs. Stress_Time

VTH2_Id=10mAVSublot7916-80

0Hrs 24Hrs 168Hrs 501Hrs 1000Hrs

VTH

2_Id

=10m

AV

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

4.50

Where(Sublot = 7916-80 and Stress_Time = 0Hrs, 24Hrs, 168Hrs, 501Hrs, 1000Hrs)

Thre

shol

d Vo

ltage

@ 1

0mA

(Vol

ts)

High Temperature Reverse Bias: 1200V, 80 mOhmHTRB @ VDS=960V for 1000 hrs, T=175C

High-‐Temperature Gate Bias: VDS=960V, T=175C, 1000 hrs

No shift in drain leakage or blocking voltage after 1000 hrs @ 960V, 175C.

Graph Builder

Breakdown Voltage @ 250uA (VGS=0V)


Brea

kdow

n Vo

ltage

@ 2

50uA

(VG

S=0V

)

0100200300400500600700800900

10001100120013001400150016001700

Where(Stress_Time = Initial, 24Hrs, 170Hrs, 500Hrs, 1002Hrs)

Bloc

king

Vol

tage

, VG

S=0V

(Vol

ts)

Graph Builder

HVIDSS_PostBV_VDS=1250V


HVI

DSS

_Pos

tBV_

VDS=

1250

V1e-9

2e-93e-94e-95e-97e-9

1e-8

2e-83e-84e-85e-87e-8

1e-7

2e-73e-74e-75e-76e-78e-71e-6

2e-63e-64e-65e-66e-68e-61e-5

Where(Stress_Time = Initial, 24Hrs, 170Hrs, 500Hrs, 1002Hrs)

Drai

n Le

akag

e, V

DS=1

200V

, VG

S=0V

(Am

ps)

DMOS Ruggedness Testing: Short Circuit

Monolith Semi 1200V, 80 mOhm SiC MOSFET (MSA12N080A)

DC link voltage: 600VGate drive: VGS=+20V

Monolith’s 80mOhm SiC MOSFET survives 5 us short circuit with 600V DC bus.

Prof. S. BhattacharyaShivam Gupta

DMOS Ruggedness Testing: Avalanche Energy

L = 20mH Ipeak= 12.6AEaval= 1.4J

Prof. S. BhattacharyaShivam Gupta

1600V12.6A

Monolith Semi 1200V, 80 mOhm DMOSFET (MSA12N080A)

Silicon Carbide Reliability

Are Silicon reliability models and qualification tests adequate for

Silicon Carbide devices?

APEC | 5kW -‐ 200kHz All-‐SiC Buck Converter

16Prof. Andy Lemmonand Levi Gant

Monolith SiC MOSFET: 1200V, 80 mOhm

Monolith SiC Diodes1200V, 2 x 10 A

Option for synchronous rectification

Monolith: Live Converter Demo @

PCIM | 5kW -‐ 200kHz All-‐SiC Buck Converter

17

Monolith diodes and MOSFETs: Live Converter Demo @ PCIM

High-‐frequency boost converter Demo illustrates the value of Silicon carbide over silicon IGBTs

Circuit Demonstration | Datacenter DC-‐DC

Parameter ValueVIN (Nominal) 675 VVOUT (Nominal) 350 VOutput Regulation ±1 VLoad Range 1 kW to 5 kW Switching Frequency 25 kHz to 200 kHz

Buck Converter, Air-‐cooled

18

675V

350V

Monolith: 1200V, 80 mOhm SiC MOSFET

Monolith: 1200V, 2x10A SiC diodes

96.8

97.0

97.2

97.4

97.6

97.8

98.0

98.2

98.4

98.6

98.8

99.0

99.2

1000 2000 3000 4000 5000

Efficiency (%)

Load (W)

Efficiency vs. Load (25 kHz)

Monolith

IGBT 1

IGBT 2

Performance | Monolith SiC MOSFETs vs. IGBTs (25 kHz)

19

0

20

40

60

80

100

120

140

160

180

1000 2000 3000 4000 5000

Temp. (C)

Load (W)

Temperature vs. Load (25 kHz)

Monolith

IGBT 1

IGBT 2

Performance | Monolith SiC MOSFETs vs. IGBTs (25 kHz)

20

Performance |Monolith SiC MOSFETs @ 200kHz

96.8

97.0

97.2

97.4

97.6

97.8

98.0

98.2

98.4

98.6

98.8

99.0

99.2

1000 2000 3000 4000 5000

Efficiency (%)

Load (W)

Efficiency vs. Load (200 kHz)

Monolith

SiC MOSFET 1

SiC MOSFET 2

SiC MOSFET 3

21

Filter Size and weight reduction by 5x

Monolith Semi’s SiC MOSFETs are best-‐in-‐class for all commercial devices.

Performance | Monolith SiC MOSFETs @ 200 kHz

0

20

40

60

80

100

120

140

160

180

1000 2000 3000 4000 5000

Temp. (C)

Load (W)

Temperature vs. Load (200 kHz)

Monolith

SiC MOSFET 1

SiC MOSFET 2

SiC MOSFET 3

22Monolith Semi’s SiC MOSFETs are best-‐in-‐class for all commercial devices.

5kW -‐ 200kHz All-‐SiC Buck Converter

23

Monolith SiC MOSFET: 1200V, 80 mOhm

Monolith SiC Diodes1200V, 2 x 10 A

Option for synchronous rectification

Switching Frequency and Filter size

Filter size at 25 kHz

Filter size at 200 kHz



200 kHz

25 kHz

With SiC, you can deliver the same power with Less Bill of Materials -‐> Lower size, weight -‐>Lower cost

With SiC: Intelligent, efficient power control can be more affordable

§ 900V, 150 Amp diodes developed for traction drive inverters under DOE Vehicles Technology Office -‐ Phase I SBIR

Current Scaling | 900V, 150A SiC Schottky diodes

Vehicle Technology Office

Current Scaling | 1200V, 150A SiC DMOSFETs

0

50

100

150

200

250

300

350

400

0 2 4 6 8 10

Drain.Curre

nt,.ID.(A

mps)

Drain.Voltage,.VDS.(Volts)

Monolith.1200V,.10.mOhm.SiC.MOSFET

0V

10V

15V20V

6"mm

9"mm

Monolith demo: 1200V, >150 Amp SiC DMOSFETs

Now scaling SiC MOSFET technology to 900Vfor automotive traction applications (DOE VTO SBIR Phase I)

0

0.0002

0.0004

0.0006

0.0008

0.001

0.0012

0 250 500 750 1000 1250 1500 1750

Drain/Curre

nt,/ID/(A

mps)

Drain/Voltage,/VDS/(Volts)

Monolith/1200V,/10/mOhm/SiC/MOSFET

Blocking Voltage1685V

Dr. Ed ShafferArmy Research Lab Energy and Power, Division Chief

Monolith SiC DMOSFET Summary

Monolith Semi has developed SiC device technology for diodes and MOSFETs, with manufacturing in a high-‐volume 6” fab.

We are scaling voltage (900, 1200 V) and current (20-‐150 Amps) of our SiC diodes and MOSFETs

We have demonstrated the ability of our SiC MOSFETs and diodes to reduce the size, weight and cost of power electronics systems.

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