argonne ald godparent review 10-01-10 v2
TRANSCRIPT
Status of ALD MCP Program at Argonne
Anil Mane, Qing Peng, Joe Libera, Jeff Elam
LAPPD Project Second Microchannel Plate Godparent ReviewOctober 4, 2010
Outline
New hardware Resistive coatings Emissive coatings Scale-up
2MCP Godparent Review Meeting 10-4-2010
Work Plan and Deliverables
Year 1– Emissive coatings– Resistive coatings– Begin scale-up
Year 2– Stripe coating (“Dynode
Chain”)– Continue scale-up
Year 3– Produce tiles
3MCP Godparent Review Meeting 10-4-2010
New Hardware: Measurement and Testing
Mercury probe – conductance of thin films in air, computer controlled
Shadow mask – measure lateral resistance of thin films
Vacuum setup – HV conductance and thermal
coefficient of MCPs
4MCP Godparent Review Meeting 10-4-2010
New Hardware: MCP Gain Testing Setup
quartz window for UV
~10-7mbar vacuum
5MCP Godparent Review Meeting 10-4-2010
Next: MCP mount, electronics, safety plan
Frame with MCP
frame in rotary fixture
New Hardware: Electroding and Fixtures
frame in rotary fixture
Fixture 1 - ClausingFixture 2 - Fermilab
6MCP Godparent Review Meeting 10-4-2010
New Hardware: Process Development and Scale-up
Large area reactor: substrate size12” x 18”, single 8” tile
Beneq TFS500Multiple 8” tiles (up to 40)
7MCP Godparent Review Meeting 10-4-2010
Resistive Coatings: Al2O3/ZnO (AZO)
Good: existing process Bad: hard to control (etching of ZnO by
trimethyl aluminum precursor) Bad: big slope (105 resistance change over
10% composition change)etching
8MCP Godparent Review Meeting 10-4-2010
Cross-Sectional Image of ALD Film in MCP
ALD Film
100 nm ALD film visible in middle of MCP 6 samples to testing group Testing: gain, then sparks
Glass
9MCP Godparent Review Meeting 10-4-2010
Temperature Coefficient
109
1010
1011
1012
20 30 40 50 60 70 80
Res
ista
nce
(Ohm
s)
T(C)
Standard Glass MCP: βT=-0.02Micromachined silica MCP: βT=-0.036
20% AZO MCP: βT=-0.06
10MCP Godparent Review Meeting 10-4-2010
Resistive coatings: MgO/ZnO (MZO)
11
No etching in MZO Resistance is tunable MgO is candidate for SEY layer No MCPs made yet with MZO
Thic
knes
s (A
ngst
rom
s)Quartz Microbalance Data:
MCP Godparent Review Meeting 10-4-2010
Patterned electrodes for testing ALD films:in-plane versus thru-film resistance
glass
ALD filmElectrode Pad
12MCP Godparent Review Meeting 10-4-2010
Resistance of ALD AZO and MgZnO
Thru-film In planeAZO AZO
In plane resistivity ~x103-104 higher than thru-film (preliminary)
0.20ohm•cm2.29e2 ohm•cm
Thru-film In plane
26 ohm•cm2.64e5 ohm•cm
MgZnO
MgZnO
13MCP Godparent Review Meeting 10-4-2010
Resistive Coatings: Chemistry 1
No etching Resistance is tunable, small slope (102 over 10%) βT=-0.027 Very reproducible (different locations, different batches) MCPs work: (20 micron, 60 L/D, 1x106 gain at 1200V) 11 MCPs to testing group
14MCP Godparent Review Meeting 10-4-2010
SEM analysis of chemisty-1 coated MCP (d) Top surface low magnification, (e) top surface high magnification and (f) Cross-section of MCP.
a) Bare MCP b) After ALD c) After ALD + Cr electrode
(d) (e) (f)
Glass
resistive layer
Photographs of bare MCP(a), After ALD chemisty-1 coating (b) and after ALD chemisty-1 coating + 200nm Cr electrode (c).
Image taken from middle of MCP
15MCP Godparent Review Meeting 10-4-2010
ALD resistive coating on MCP: Chemistry 1
• Uniform and smooth ALD coating pores of MCP
% of metal ALD cycles doping in oxide
1.E+06
1.E+08
1.E+10
1.E+12
1.E+14
5 10 15 20 25 30 35
Resis
tivity
(ohm
-cm
)
W % in Al2O3
Resistivity vs. % W in Al2O3 on MCP
Roughness•Maximum RMS roughness < 3%
AFM on planer substrate (Courtesy: Hau Wang)
10% 20% 30%
0.506nm 0.889nm 1.41nm
•Linear I-V on MCP
y = 1E-08x - 2E-09
-2.E-07
-1.E-07
-1.E-21
1.E-07
2.E-07
-10 -5 0 5 10
I(A)
V(V)
30% W in Al2O3
MCP
Workable resistivity range for 33mm MCP
y = 1E-08x - 2E-09
-2.E-07
-1.E-07
-1.E-21
1.E-07
2.E-07
-10 -5 0 5 10
I(A)
V(V)
30% W in Al2O3
MCP
16MCP Godparent Review Meeting 10-4-2010
Reproducibility: ALD Chemistry 1
620
630
640
650
660
0 5 10 15 20
Thic
knes
s [A]
# of MCP
Thickness
Thickness on Si(100) Resistance
1.E+06
1.E+08
1.E+10
1.E+12
1.E+14
0 5 10 15 20
Resi
stan
ce (o
hm)
# of MCP
On GlassOn MCP
Composition AComposition B
Composition A Composition B
• Excellent reproducible thickness and resistance on Glass• Resistance variation on MCP cause by electrode variations (end spoiling not controlled)
17MCP Godparent Review Meeting 10-4-2010
MCP resistance stability (air vs. vacuum) Chemistry 1
Vacuum break
I-V measured after 4 days
• Stable I-V response in vacuum
MCP# 122Photonis electrode first ++ ALD resistive chem-1 + SEE coating
R=150M at RT
18MCP Godparent Review Meeting 10-4-2010
ALD coated MCP resistance stability in vacuum – Chemistry 1
• Very stable resistance performance with less than 5% resistance variation• I-V set-up upgrade in progress, will allow I-V testing for ~1.5kV
MCP# 122 Photonis electrode first + ALD resistive chem-1 + SEE coating
R=150 M
0 2 4 6 8 100
20
40
60
80
100
120
140
160
180
200M
CP
re
sist
an
ce (
M)
Time (days)
Resistance variation <5%
Data collected at constant 100V condition (heating of MCP?)
19MCP Godparent Review Meeting 10-4-2010
1.E+00
1.E+03
1.E+06
1.E+09
1.E+12
1.E+15
0 5 10 15
Resis
tivity
(ohm
-cm
)
Mo % in Al2O3
Data on GlassResistivity of ALD coating on Glass: Chemistry #2
• Better control process than chemistry 1: uniform and smooth ALD coating• Similar resistivity range (like chemisty 1)• βT=-0.033• Process tested on large substrates capable ALD reactor
% of metal ALD cycles doping in oxide
•Linear I-V on Glass
Workable resistivity range for 33mm MCP
20MCP Godparent Review Meeting 10-4-2010
@1200V
Phosphor image of ALD functionalized MCP with chemistry 2 and Al2O3 SEE layer
MPC works
(Ossy)
21MCP Godparent Review Meeting 10-4-2010
Spacers resistance tuning by ALD
Tune spacer resistance using ALD resistive coatings
22MCP Godparent Review Meeting 10-4-2010
Spacers resistance tuning by ALD (used Chemistry 1)
Total R = R1+R2+R3
Spacer 1Spacer 2 Spacer 3
Tota
l Res
ista
nce
(R1+
R2+R
3, Ω
)
Chem -1Compositon-1
Chem -1Compositon-2
Can tune spacer resistance using thickness and composition
In-situ resistance monitoring
23MCP Godparent Review Meeting 10-4-2010
Emissive Coatings Substrates:
– Si(100) - conductive, smooth, flat, cheap– Photonis MCPs– ALD MCPs
Films:– Al2O3, MgO, SiO2, ZnO/Al2O3
– Diamond (UNCD) film awaiting test– 1-100 nm
~60 samples to characterization group
24
ALD
No ALD
(Ossy)
MCP Godparent Review Meeting 10-4-2010
Process scale-up: Chemistry 2 in large area coater
12”x12” Glass
300mm Si wafer
For initial test, used same pressures and timings as small reactor
25MCP Godparent Review Meeting 10-4-2010
Large substrate testing: ALD Chemistry #2
Item Thickness [A] Index of refraction (n)Minimum 775 1.72
Maximum 794 1.77
Average 785 1.73
% STDV (1σ) 0.57 0.84
Thickness Index of refractionLo
catio
n ac
ross
sub
stra
te
Location across substrate
-150 -100 -50 0 50 100 150-150
-100
-50
0
50
100
150
Y(m
m)
X (mm)
775.0
777.4
779.8
782.1
784.5
786.9
789.3
791.6
794.0
-150 -100 -50 0 50 100 150-150
-100
-50
0
50
100
150
Y(m
m)
X (mm)
1.715
1.722
1.730
1.737
1.744
1.751
1.759
1.766
1.773
26MCP Godparent Review Meeting 10-4-2010
Scale-up
MCP Godparent Review Meeting 10-4-2010
First test: Al2O3 on 8”x8” capillary glass array
8”x8”MCP
27