application note no. 089 - infineon technologies

Appl icat ion Note No. 089The BGA622L7 Si l icon-Germanium Universal Low Noise Ampl i f ier MMIC in UMTS Receiver Appl icat ion

Appl icat ion Note, Rev. 2.0, Jan. 2007

RF & Protect ion Devices

Edition 2007-01-17Published byInfineon Technologies AG81726 München, Germany© Infineon Technologies AG 2009.All Rights Reserved.

LEGAL DISCLAIMERTHE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

WarningsDue to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

http://www.infineon.com

Application Note No. 089

Application Note 3 Rev. 2.0, 2007-01-17

TrademarksSIEGET® is a registered trademark of Infineon Technologies AG.


Revision History: 2007-01-17, Rev. 2.0Previous Version: 2004-09-02Page Subjects (major changes since last revision)All Document layout change



The BGA622L7 Silicon-Germanium Universal Low Noise Amplifier MMIC in

1 The BGA622L7 Silicon-Germanium Universal Low Noise Amplifier MMIC in UMTS Receiver Applications

Features

1.1 IntroductionThe BGA622L7 is an easy-to-use, versatile and flexible low-cost Low Noise Amplifier (LNA) MMIC designed forthe high linearity and sensitivity requirements of existing and next - generation wireless applications includingGSM, 900 MHz ISM, GPS, UMTS and Wireless LANs. The BGA622L7 is housed in the ultra-small TSLP-7-1package consuming less PCB space while providing more gain compared to BGA622. Based on Infineon’s cost-effective 70 GHz fT Silicon-Germanium (SiGe) B7HF bipolar process technology, the BGA622L7 offers a 1.1 dBnoise figure and 16 dB of gain at 2.1 GHz for high performance, cost-effective mobile communicationsapplications. BGA622L7 offers impressive noise figure performance, particularly for a low-cost, integrated MMIC.In the past, in-circuit noise figure approaching 1.0 dB at 2 GHz were possible only for more expensive GaAs-based, fully discrete solutions utilizing narrowband impedance matching and higher external parts count. TheBGA622L7 combines the excellent noise figure advantages of a high-performance discrete solution with the easy-to-use, low parts count, and diminished risk and reduced system development time made possible by a MMICapproach.The new LNA incorporates a 50 Ω matched output with an integrated output DC blocking capacitor. Thebroadband output match simplifies integration issues with external image-stripping filters. The input is pre-matched, requiring an external RF choke on the voltage supply pin. The noise figure of BGA622L7 is relativelyinsensitive to the input impedance matching approach taken by the end user, reducing development time and risk.A low supply current of 6 mA at 2.75 V and an integrated on / off feature provides for low power consumption andincreased stand by time for 3 G cellular handsets or other portable, battery-operated wireless applications.

• Versatile, easy-to-use LNA MMIC in 70 GHz fT SiGe technology.• 50 Ohm matched output, pre-matched input• Integrated output DC blocking capacitor, integrated RF choke

on internal bias network• Low current consumption of 6 mA• “Shutdown” or “Sleep” mode• Unconditionally stable• Low external component count• Ultra small TSLP-7-1 package• Exceptional noise figure: 1.1 dB at 2.1 GHzApplications• Low Noise Amplifier for 800 / 900 MHz, GSM900, 900 MHz

ISM, DCS1800, GPS, 1900 MHz PCS, 2.1 GHz UMTS, Bluethooth and 2.4 GHz Wireless LAN

1 2 3

6 5

4

7


The BGA622L7 Silicon-Germanium Universal Low Noise Amplifier MMIC in


Figure 1 Pin Connection

Figure 2 BGA622L7’s Equivalent Circuit

1.2 OverviewThe BGA622L7 is shown in three different configurations for the UMTS frequency band between 2.11 GHz and2.17 GHz:• Configuration A: minimum parts count• Configuration B: BGA622L7 with increased IIP3• Configuration C: BGA622L7 with increased IIP3 and power down optionTable 1 shows the measured performance of these three circuits. All measurement values presented in thisapplication note include losses of both PCB and connectors - in other words, the reference planes used formeasurements are the PCB’s RF SMA connectors. Please note that noise figure and gain results shown do nothave any PCB loss extracted from them. Removing the effects of the connectors’ and the PCB’s loss would resultin an increase of gain of about 0.4 dB and a decrease of noise figure of about 0.2 dB.

Table 1 Performance OverviewParameter Configuration A Configuration B Configuration CSupply voltage 2.75 V 2.75 V 2.75 VSupply current 5.7 mA 5.7 mA 5.7 mAGain 16.2 dB 16.1 dB 16.2 dBNoise figure 1.35 dB 1.35 dB 1.35 dBInput return loss 11.1 dB 12.0 dB 12.0 dBOutput return loss 9.4 dB 9.8 dB 9.3 dB

AN089_Pin_connection.vsd

In Out

Vcc

1

2

3 4

5

6

7GND

Top View

AN089_BGA622L7_Circuit.vsd

Vcc,4

Out,5

GND,7

In,2

On/Off

10kΩ



Configuration A

All values displayed are measured at 2.14 GHz if not otherwise noted.

2 Configuration AThe circuit in Figure 3 shows the minimum parts count version of a BGA622L7 LNA. There are only three externalelements necessary. A DC blocking capacitor at the output and a coil at the power supply are already integratedon chip.

Figure 3 Circuit Diagram of Configuration A

Reverse Isolation 26.3 dB 26.4 dB 26.3 dBInput compression point -17.5 dB -17.5 dB -17.5 dBmInput 3rd order intercept point, on state1) -10 dB 0 dB 0 dBInsertion loss, power down - - 21.4 dBInput 3rd order intercept point power down2) - - 20 dBm1) -35 dBm per tone, ∆f = 1 MHz2) -10 dBm per tone, ∆f = 1 MHz

Table 2 Bill of Materials of Configuration AName Value Unit Package Manufacturer FunctionC1 47 pF 0402 Various DC block, helps noise matchingC3 220 pF 0402 Various RF bypassL1 1.8 nH 0402 Toko LL1005-FH Input matchingQ1 BGA622L7 TSLP-7-1 Infineon Technologies SiGe MMIC

Table 1 Performance Overview (cont’d)Parameter Configuration A Configuration B Configuration C

AN089_Circuit_Diagram_A.vsd

C147pF

Out

Vcc

In1

2

3 4

5

6

7GNDL1

1.8nH

Q1BGA622L7

C3220pF


Configuration A


2.1 Measurements for Configuration A

Figure 4 Noise figure Configuration A

Figure 5 Gain Configuration A

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.10 2.12 2.14 2.16 2.18

Frequency [GHz]

Noi

se F

igur

e [d

B]

AN089_NF(f)_A.vsd

AN089_Gain(f)_A.vsd

14

14.5

15

15.5

16

16.5

17

17.5

18

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

Gai

n [d

B]



Configuration A

Figure 6 Return Loss Configuration A

Figure 7 Reverse Isolation Configuration A

AN089_Return_Loss(f)_A.vsd

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10

Frequency [GHz]

mag

(s11

), m

ag(s

22) [

dB] s11

s22

AN089_Reverse_Isolation(f)_A.vsd

-28

-27

-26

-25

-24

-23

-22

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

mag

(s12

) [dB

]


Configuration A


Figure 8 Stability Factor K and Stability Measure B1 of Configuration A

Figure 9 Wide Span Gain Configuration A

AN089_K_B1(f)_A.vsd

0

1

2

3

4

5

6

7

8

0 2 4 6 8 10

Frequency [GHz]

K, B

1

K

B1

AN089_Gain(f)_WS_A.vsd

-10

-5

0

5

10

15

20

0 2 4 6 8 10

Frequency [GHz]

Gai

n [d

B]



Configuration B

Figure 10 Wide Span Return Loss Configuration A

3 Configuration BThe circuit in Figure 11 shows a way to increase the input 3rd order intercept point of BGA622L7. L2 and C2 offerlow-frequency intermodulation products a low impedance path to ground. This prevents them from modulating thebase voltage of the BGA622L7’s internal RF transistor and thus linearity is improved. Typically the input 3rd-orderintercept point of BGA622L7 can be improved by 6 to 10 dB in this manner.

Figure 11 Circuit Diagram Configuration B

Table 3 Bill of Materials of Configuration BName Value Unit Package Manufacturer FunctionC1 47 pF 0402 Various DC block, helps noise matchingC2 100 nF 0603 Various IIP3 improvementC3 220 pF 0402 Various RF bypass

AN089_Return_Loss(f)_WS_A.vsd

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10

Frequency [GHz]

mag

(s11

), m

ag(s

22) [

dB] s11

s22

AN089_Circuit_Diagram_B.vsd

C147pF

Out

C2100nF

L222nH

Vcc

In1

2

3 4

5

6

7GNDL1

1.8nH

Q1BGA622L7

C3220pF


Configuration B


3.1 Measurements of Configuration B

Figure 12 Noise figure Configuration B

Figure 13 Gain Configuration B

L1 1.8 nH 0402 Toko LL1005-FH Input matchingL2 22 nH 0402 Toko LL1005-FH RF chokeQ1 BGA622L7 TSLP-7-1 Infineon Technologies SiGe MMIC

Table 3 Bill of Materials of Configuration B (cont’d)Name Value Unit Package Manufacturer Function

AN089_NF(f)_B.vsd

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.10 2.12 2.14 2.16 2.18

Frequency [GHz]

Noi

se F

igur

e [d

B]

AN089_Gain(f)_B.vsd

14

14.5

15

15.5

16

16.5

17

17.5

18

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

Gai

n [d

B]



Configuration B

Figure 14 Return Loss Configuration B

Figure 15 Reverse Isolation Configuration B

AN089_Return_Loss(f)_B.vsd

-14-13-12-11-10

-9-8-7-6-5

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

mag

(s11

), m

ag(s

22)

s11

s22

AN089_Reverse_Isolation(f)_B.vsd

-28

-27

-26

-25

-24

-23

-22

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

mag

(s12

) [dB

]


Configuration B


Figure 16 Stability Factor K and Stability Measure B1 of Configuration B

Figure 17 Wide Span Gain Configuration B

AN089_K_B1(f)_B.vsd

0

1

2

3

4

5

6

7

8

0 2 4 6 8 10

Frequency [GHz]

K, B

1

K

B1

AN089_Gain(f)_WS_B.vsd

-10

-5

0

5

10

15

20

25

0 2 4 6 8 10

Frequency [GHz]

Gai

n [d

B]



Configuration C

Figure 18 Wide Span Return Loss Configuration B

4 Configuration CFigure 19 shows a BGA622L7 LNA with available power down mode. In the BGA622L7, an internal high-impedance path exists around the device’s internal output DC blocking capacitor, between the output pin and thedevice’s internal shutdown circuitry. Applying VCC at the Output pin (pin 5) will switch off the BGA622L7 and onlya small supply current of about 0.26 mA flows into the device in shutdown mode. The schematic shows the “PD”(Power Down) connection where the shutdown signal may by applied. Ground or an open circuit at the PD pin willturn on the device. Note that if the Power Down feature is employed, the internal DC blocking capacitor of theBGA622L7 is bypassed by external circuitry, and therefore some sort of external DC blocking at the output mustbe employed. This can be either an external output DC blocking capacitor, or the usual image-stripping filter,provided the input of the filter presents a DC open circuit.

Figure 19 Circuit Diagram Configuration C

AN089_Return_Loss(f)_WS_B.vsd

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10

Frequency [GHz]

mag

(s11

), m

ag(s

22) [

dB] s11

s22

AN089_Circuit_Diagram_C.vsd

C147pF

C4220pF

Out

C2100nF

L222nH

Vcc

In1

2

3 4

5

6

7GND

PD

R11.8kΩ

C5220pF

L11.8nH

Q1BGA622L7

C3220pF


Configuration C


4.1 Measurements of Configuration C

Figure 20 Noise figure Configuration C

Table 4 Bill of Materials of Configuration CName Value Unit Package Manufacturer FunctionC1 47 pF 0402 Various DC block, helps noise matchingC2 100 nF 0603 Various IIP3 improvementC3 220 pF 0402 Various RF bypassC4 220 pF 0402 Various DC blockC5 220 pF 0402 Various RF bypassL1 1.8 nH 0402 Toko LL1005-FH Input matchingL2 22 nH 0402 Toko LL1005-FH RF chokeR1 1.8 kΩ 0402 Various RF chokeQ1 BGA622L7 TSLP-7-1 Infineon Technologies SiGe MMIC

AN089_NF(f)_C.vsd

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.10 2.12 2.14 2.16 2.18

Frequency [GHz]

Noi

se F

igur

e [d

B]



Configuration C

Figure 21 Gain Configuration C

Figure 22 Return Loss Configuration C

AN089_Gain(f)_C.vsd

14

14.5

15

15.5

16

16.5

17

17.5

18

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

Gai

n [d

B]

AN089_Return_Loss(f)_C.vsd

-14-13-12-11-10

-9-8-7-6-5

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

mag

(s11

), m

ag(s

22)

s11

s22


Configuration C


Figure 23 Reverse Isolation Configuration C

Figure 24 Stability Factor K and Stability Measure B1 of Configuration C

AN089_Reverse_Isolation(f)_C.vsd

-28

-27

-26

-25

-24

-23

-22

2.1 2.12 2.14 2.16 2.18

Frequency [GHz]

mag

(s12

) [dB

]

AN089_K_B1(f)_C.vsd

0

1

2

3

4

5

6

7

8

0 2 4 6 8 10

Frequency [GHz]

K, B

1

K

B1



Configuration C

Figure 25 Wide Span Gain Configuration C

Figure 26 Wide Span Return Loss Configuration C

AN089_Gain(f)_WS_C.vsd

-10

-5

0

5

10

15

20

25

0 2 4 6 8 10

Frequency [GHz]

Gai

n [d

B]

AN089_Return_Loss(f)_WS_C.vsd

-35

-30

-25

-20

-15

-10

-5

0

0 2 4 6 8 10

Frequency [GHz]

mag

(s11

), m

ag(s

22) [

dB] s11

s22


Configuration C


Figure 27 Forward Transmission in Power Down Mode

Figure 28 Input and Output Return Loss in Power Down Mode

AN089_Gain(f)_PDM_C.vsd

-50

-45

-40

-35

-30

-25

-20

-15

-10

0 2 4 6 8 10

Frequency [GHz]

Gai

n [d

B]

AN089_Return_Loss_PDM_C.vsd

-16

-14

-12

-10

-8

-6

-4

-2

0

0 2 4 6 8 10

Frequency [GHz]

mag

(s11

), m

ag(s

22) [

dB]

s22

s11



Application PCB

5 Application PCBFigure 29 shows the placement of the specific components on the PCB. The Test-pin is not used in thisapplication. It is only provided in case someone wants to access the input of the BGA622L7 for testing purposes.

Figure 29 Component Placement on Application PCB

Figure 30 Zoom-in on a PCB with input matching and power down option

AN089_Component_Placement.vsd

NA

C1N

AL1

L2C

2 NA

NA

C3

C5

R1

C4Q1

Tst Vcc PD

RFin RFout


Application PCB


Figure 31 Application PCB

Figure 32 PCB Cross Section

Evaluation boards for the LNA applications described in this application note are available from InfineonTechnologies.

AN089_PCB_Cross_Section.vsd

0.8 mm FR4

0.2 mm FR435 µm Cu

35 µm Cu

35 µm Cu

for mechanicalrigidity of PCB

application note no. 089 - infineon technologies

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