application note: 3gpp lte tdd bts measurement

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Application Note 3GPP LTE TDD BTS Measurement MS2690A/MS2691A/MS2692A Signal Analyzer MG3700A Vector Signal Generator

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Page 1: Application Note: 3GPP LTE TDD BTS Measurement

Application Note

3GPP LTE TDD BTS Measurement

MS2690A/MS2691A/MS2692A Signal Analyzer

MG3700A Vector Signal Generator

Page 2: Application Note: 3GPP LTE TDD BTS Measurement

Slide 1MG3700A/MS269xA-E-F-3

MS269xA Signal Analyzer MG3700A Vector Signal Generator

July 2009 Anritsu Corporation

3GPP LTE TDD BTS Measurement (TS36.141 v8.2.0)

Page 3: Application Note: 3GPP LTE TDD BTS Measurement

Slide 2MG3700A/MS269xA-E-F-3

MS269xA Signal AnalyzerMX269020A LTE Downlink Meas. Software

MG3700A Vector Signal GeneratorMX370108A LTE IQproducerMX370104A Multi-Carrier IQproducer

Recommended Configuration

Memo

ry A

Wan

ted

wave

Memo

ry B

Inte

rfere

nce

wave

6.2 Base station output power OK6.3.1 RE Power control dynamic range6.3.2 Total power dynamic range OK6.4 Transmit ON/OFF power6.5.1 Frequency error OK6.5.2 Error Vector Magnitude OK6.5.3 Time alignment between transmitter branches OK6.5.4 DL RS power OK6.6.1 Occupied bandwidth OK6.6.2 Adjacent Channel Leakage power Ratio (ACLR) OK6.6.3 Operating band unwanted emissions OK6.6.4 Transmitter spurious emissions OK6.7 Transmitter intermodulation OK E-TM1.17.2 Reference sensitivity level OK7.3 Dynamic range OK AWGN7.4 In-channel selectivity OK xxRBs7.5 Adjacent Channel Selectivity (ACS) OK E-UTRA7.5 Narrow-band blocking OK 1RB

OK E-UTRA ○

Ok OK7.7 Receiver spurious emissions OK

Receiver intermodulation OK E-UTRA OKReceiver intermodulation (Narrow) OK 1RB OK

7.8

Rec

eive

r

Future support

Tran

smitt

er

CW S

G

7.6 Blocking

MG3700A

3GPP TS 36.141

MS26

90A

(SPA

)

Same as item 6.5.2

With the MG3700A, both the “wanted” signal and “interference signal” can be generated at one port using two different arbitrary waveform memories.

Usually, a modulation signal source is needed (item 6.7), but another signal generator is not required with the MS269xA because it has a built-in signal generator option (MS269xA-020).

MS269xA-020 Vector Signal GeneratorMX269908A LTE IQproducer

Page 4: Application Note: 3GPP LTE TDD BTS Measurement

Slide 3MG3700A/MS269xA-E-F-3

LTE TDD Signal

LTE TDD Downlink Measurement Software

Special Subframe Configuration

Uplink-Downlink Configuration3GPP TS Definition

The LTE TDD Measurement Software supports similar functions to FDD but has additional parameters for defining the TDD signal.<More details soon>

Page 5: Application Note: 3GPP LTE TDD BTS Measurement

Slide 4MG3700A/MS269xA-E-F-3

Agenda

1. Test Model 2. Transmitter Characteristics 3. Receiver Characteristics

Page 6: Application Note: 3GPP LTE TDD BTS Measurement

Slide 5MG3700A/MS269xA-E-F-3

Test Model for Transmitter Characteristics1. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM1.1

BS Output PowerUnwanted emissions - Occupied bandwidth - ACLR - Operating band unwanted emissions - Transmitter spurious emissionsTransmitter intermodulationRS Absolute accuracy

QPSK None

E-TM1.2Unwanted emissions - ACLR - Operating band unwanted emissions

QPSK40%: +3 dB

60%: -4.73 dB

E-TM2Total power dynamic range (lower OFDM symbol power limit at min. power), - EVM of single 64QAM PRB allocation (at min. power) - Frequency error (at min. power)

64QAM: 1%OFF: 99%

64QAM: 0 dBOFF: -inf

E-TM3.1

Total power dynamic range (upper OFDM symbol power limit at max. power withall 64QAM PRBs allocated)Transmitted signal quality - Frequency error - EVM for 64QAM modulation (at max. power)

64QAM None

E-TM3.2Transmitted signal quality - Frequency error - EVM for 16QAM modulation

16QAM: 60%QPSK: 40%

16QAM: -3 dBQPSK: +2.426 dB

E-TM3.3Transmitted signal quality - Frequency error - EVM for QPSK modulation

16QAM: 50%QPSK: 50%

QPSK: -6 dB16QAM: +2.427 dB

Page 7: Application Note: 3GPP LTE TDD BTS Measurement

Slide 6MG3700A/MS269xA-E-F-3

Configurations of TDD eNB Test Models1. Test Model

Page 8: Application Note: 3GPP LTE TDD BTS Measurement

Slide 7MG3700A/MS269xA-E-F-3

E-TM1.11. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM1.1

BS Output PowerUnwanted emissions - Occupied bandwidth - ACLR - Operating band unwanted emissions - Transmitter spurious emissionsTransmitter intermodulationRS Absolute accuracy

QPSK None

Page 9: Application Note: 3GPP LTE TDD BTS Measurement

Slide 8MG3700A/MS269xA-E-F-3

E-TM1.21. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM1.2Unwanted emissions - ACLR - Operating band unwanted emissions

QPSK 40%: +3 dB60%: -4.73 dB

Page 10: Application Note: 3GPP LTE TDD BTS Measurement

Slide 9MG3700A/MS269xA-E-F-3

E-TM21. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM2Total power dynamic range (lower OFDM symbol power limit at min. power), - EVM of single 64QAM PRB allocation (at min. power) - Frequency error (at min. power)

64QAM: 1%OFF: 99%

64QAM: 0 dBOFF: -inf

Page 11: Application Note: 3GPP LTE TDD BTS Measurement

Slide 10MG3700A/MS269xA-E-F-3

E-TM3.11. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM3.1

Total power dynamic range (upper OFDM symbol power limit at max. power withall 64QAM PRBs allocated)Transmitted signal quality - Frequency error - EVM for 64QAM modulation (at max. power)

64QAM None

Page 12: Application Note: 3GPP LTE TDD BTS Measurement

Slide 11MG3700A/MS269xA-E-F-3

E-TM3.21. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM3.2Transmitted signal quality - Frequency error - EVM for 16QAM modulation

16QAM: 60%QPSK: 40%

16QAM: -3 dBQPSK: +2.426 dB

Page 13: Application Note: 3GPP LTE TDD BTS Measurement

Slide 12MG3700A/MS269xA-E-F-3

E-TM3.31. Test Model

ApplicationModulation

SchemePower Variation(at 20 MHz Bandwidth)

E-TM3.3Transmitted signal quality - Frequency error - EVM for QPSK modulation

16QAM: 50%QPSK: 50%

QPSK: -6 dB16QAM: +2.427 dB

Page 14: Application Note: 3GPP LTE TDD BTS Measurement

Slide 13MG3700A/MS269xA-E-F-3

Transmitter Characteristics Measurements2. Transmitter Characteristics

Page 15: Application Note: 3GPP LTE TDD BTS Measurement

Slide 14MG3700A/MS269xA-E-F-3

6.2 Base Station Output Power

ATT

MS269xA

BTS

Control E-TM1.1

Procedure(1) Output E-TM1.1 from BTS(2) Measure mean power

Specification(1) ±2.7 dB (normal conditions)(2) ±3.2 dB (extreme conditions)

3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F1] to [F5]

Mean power measurement

2. Transmitter Characteristics

Page 16: Application Note: 3GPP LTE TDD BTS Measurement

Slide 15MG3700A/MS269xA-E-F-3

6.3.2 Total Power Dynamic Range

Procedure

(1)Output E-TM3.1 from BTS (Upper)(2)Measure averaged OFDM symbol power(3) Output E-TM2 from BTS (Lower)(4) Measure averaged OFDM symbol power(5) Calculate difference between TM3.1 and TM2

Specification

Measure difference between max. and min. values for OFDM symbol power.

2. Transmitter Characteristics

Page 17: Application Note: 3GPP LTE TDD BTS Measurement

Slide 16MG3700A/MS269xA-E-F-3

6.3.2 Total Power Dynamic Range3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F6: Summary]

ATT

MS269xA

BTS

ControlE-TM3.1E-TM2

2. Transmitter Characteristics

Page 18: Application Note: 3GPP LTE TDD BTS Measurement

Slide 17MG3700A/MS269xA-E-F-3

6.5.1 Frequency Error 6.5.2 Error Vector Magnitude

Procedure(1) Output E-TM2/3.1/3.2/3.3 from BTS sequentially(2) Measure frequency error and EVM for each test model

Specification for Frequency Error±0.05 ppm

Specification for Error Vector Magnitude

2. Transmitter Characteristics

Page 19: Application Note: 3GPP LTE TDD BTS Measurement

Slide 18MG3700A/MS269xA-E-F-3

ATT

6.5.1 Frequency Error 6.5.2 Error Vector Magnitude

MS269xA

BTS

Control

E-TM2E-TM3.1E-TM3.2E-TM3.3

3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F1] to [F5]

2. Transmitter Characteristics

Page 20: Application Note: 3GPP LTE TDD BTS Measurement

Slide 19MG3700A/MS269xA-E-F-3

ATT

6.5.1 Frequency Error 6.5.2 Error Vector Magnitude

MS269xA

BTS

Control

E-TM2E-TM3.1E-TM3.2E-TM3.3

3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F1] to [F5]

2. Transmitter Characteristics

Page 21: Application Note: 3GPP LTE TDD BTS Measurement

Slide 20MG3700A/MS269xA-E-F-3

6.5.3 Time Alignment between Transmitter Branches

MS269xA

TriggerBTS

ControlATT

Procedure(1) Output reference signal (trigger)

from BTS to MS269xA(2) Output TM1 from BTS antenna 1(3) Measure time offset(4) Measure antenna 2 in same way

as (2) and (3)(5) Calculate difference

E-TM1.1Antenna 2

3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F1] to [F5] (Time Offset enabled when External Trigger On)

Antenna 1

Specificationwithin 65 ns

2. Transmitter Characteristics

Page 22: Application Note: 3GPP LTE TDD BTS Measurement

Slide 21MG3700A/MS269xA-E-F-3

ATT

6.5.4 DL RS Power

MS269xA

BTS

Control E-TM1

Procedure(1) Output E-TM1.1 from BTS(2) Measure RS power(3) Calculate actual measured value

3GLTE Downlink Measurement Software

[Trace] > [F1: Trace Mode] > [F6: Summary]

Measure difference between setting value and actual measured value for DL RS Power

Specification±2.1 dB

2. Transmitter Characteristics

Page 23: Application Note: 3GPP LTE TDD BTS Measurement

Slide 22MG3700A/MS269xA-E-F-3

ATT

6.6.1 Occupied Bandwidth

MS269xA

BTS

Control E-TM1.1

Procedure(1) Output E-TM1.1 from BTS(2) Setting for spectrum analyzer

Span: 20 MHz RBW: 30 kHz Points: >400

(3) Measure OBW (99% power)

3GLTE Downlink Measurement Software

[Measure] > [F6] or [F7]

Specificationwithin Channel Bandwidth

2. Transmitter Characteristics

Page 24: Application Note: 3GPP LTE TDD BTS Measurement

Slide 23MG3700A/MS269xA-E-F-3

6.6.2 Adjacent Channel Leakage Power Ratio

Procedure(1) Output E-TM1.1/1.2 from BTS sequentially(2) Measure ACLR for each test model

Specification

2. Transmitter Characteristics

Page 25: Application Note: 3GPP LTE TDD BTS Measurement

Slide 24MG3700A/MS269xA-E-F-3

ATT

6.6.2 Adjacent Channel Leakage Power Ratio

MS269xA

BTS

ControlE-TM1.1E-TM1.2

3GLTE Downlink Measurement Software

[Measure] > [F2] or [F3]

2. Transmitter Characteristics

Page 26: Application Note: 3GPP LTE TDD BTS Measurement

Slide 25MG3700A/MS269xA-E-F-3

ATT

6.6.3 Operation Band Unwanted Emissions

MS269xA

BTS

Control

Procedure(1) Output E-TM1.1/1.2 from BTS

sequentially(2) Measure SEM for each test model

E-TM1.1E-TM1.2

Specificationwithin each limit range

2. Transmitter Characteristics

Page 27: Application Note: 3GPP LTE TDD BTS Measurement

Slide 26MG3700A/MS269xA-E-F-3

6.6.4 Transmitter Spurious Emissions

Procedure(1) Output E-TM1.1 from BTS(2) Measure spurious emission

E-TM1.1

ATT

MS269xA

BRF

BTS

Control

Specificationwithin each limit range

2. Transmitter Characteristics

Page 28: Application Note: 3GPP LTE TDD BTS Measurement

Slide 27MG3700A/MS269xA-E-F-3

ATT

6.7 Transmitter Inter-modulation

MS269xAAMP

BTS

Control

Procedure(1) Output E-TM1.1 from BTS(2) Output interfering E-TM1.1 (5-MHz bandwidth) signal from SG with

following offset sequence1. Bwchannel /2 + 2.5 MHz 2. Bwchannel /2 – 2.5 MHz3. Bwchannel /2 + 7.5 MHz 4. Bwchannel /2 – 7.5 MHz 5. Bwchannel /2 + 12.5 MHz 6. Bwchannel /2 – 12.5 MHz

(3) Measure ACLR, SEM and spurious emission in each case

E-TM1.1

E-TM1.1(5 MHz)

ACLRSEMSpurious Emission

2. Transmitter Characteristics

Page 29: Application Note: 3GPP LTE TDD BTS Measurement

Slide 28MG3700A/MS269xA-E-F-3

Receiver Characteristics Measurements Lists

*1: MG3700A can generate combination signal (wanted signal and modulated interference signal) using two arbitrary waveform memories. Need MX370104A Multi-Carrier IQproducer to create interference signal.

MX370108A LTE IQproducerMX370104A Multi-Carrier IQproducer

*2: Need narrow bandwidth modulated interference signal (1RB, 10RB, etc.). After creating 1RB and 10RB, etc., pattern using LTE IQproducer, perform clip-free filtering using Clipping (standard IQproducer function).

3. Receiver Characteristics

Page 30: Application Note: 3GPP LTE TDD BTS Measurement

Slide 29MG3700A/MS269xA-E-F-3

Procedure(1) Set test signal as shown in table(2) Measure throughput

7.2 Reference Sensitivity Level

SpecificationThroughput ≥95%

3. Receiver Characteristics

Page 31: Application Note: 3GPP LTE TDD BTS Measurement

Slide 30MG3700A/MS269xA-E-F-3

7.2 Reference Sensitivity Level

MG3700A

BTS

Rx

Throughput

LTE IQproducer (option)

Transfer Wanted Signal(1.4 to 20 MHz)

Create LTE wanted signal pattern using LTE IQproducer. After transferring created pattern to MG3700A hard disk, can generate pattern from MG3700A without PC.

3. Receiver Characteristics

Page 32: Application Note: 3GPP LTE TDD BTS Measurement

Slide 31MG3700A/MS269xA-E-F-3

7.3 Dynamic Range

Wanted signalInterference

signal (AWGN)

Procedure(1) Set test signal as in table(2) Measure throughput

SpecificationThroughput ≥95%

3. Receiver Characteristics

Page 33: Application Note: 3GPP LTE TDD BTS Measurement

Slide 32MG3700A/MS269xA-E-F-3

7.3 Dynamic Range

MG3700A

BTS

Rx

Throughput

LTE IQproducer (option)

Transfer

Wanted Signal + Interference Signal (AWGN)

AWGN Function (standard function)

Create LTE wanted signal pattern using LTE IQproducer.Use AWGN function as standard function. Easy to create by selecting expected signal (LTE) and selecting bandwidth scale (1/1.5/2/2.5).

Generate combined signal from one MG3700AAdjust power level difference on screen No external coupler Fast level checking

3. Receiver Characteristics

Page 34: Application Note: 3GPP LTE TDD BTS Measurement

Slide 33MG3700A/MS269xA-E-F-3

7.4 In-channel Selectivity

6RBs

15RBs

25RBs

50RBs

75RBs

100RBs

3RBs

9RBs

15RBs

25RBs

25RBs

25RBs

Wanted Signal

Interference Signal

(Modulated)

E-UTRA CH BW

Procedure(1) Set test signal as in table(2) Measure throughput Wanted signal

Interference signal (16QAM)

SpecificationThroughput ≥95%

3. Receiver Characteristics

Page 35: Application Note: 3GPP LTE TDD BTS Measurement

Slide 34MG3700A/MS269xA-E-F-3

7.4 In-channel Selectivity

MG3700A

BTS

Rx

Throughput

LTE IQproducer (option)

Multi-CarrierIQproducer

(option)

Transfer

Create wanted LTE signal pattern with specified RB number using LTE IQproducer.For interference signal, first create waveform pattern with specified RB number near center frequency using LTE IQproducer. Then drift ½ RB (90 kHz) from center frequency (symmetrical) using Multi-Carrier IQproducer. Finally, cut nearby noise with ideal filter using clipping function.

Clipping Function

(standard)

Wanted Signal + Interfere Signal (xx RBs)

Generate combined signal from one MG3700AAdjust frequency offset and power level difference on screen No external coupler Fast level checking

3. Receiver Characteristics

Page 36: Application Note: 3GPP LTE TDD BTS Measurement

Slide 35MG3700A/MS269xA-E-F-3

7.5 Adjacent Channel Selectivity and Narrow Band Blocking

E-UTRA CH BW

E-UTRA CH BW

OffsetEdge Center

Wanted signalInterference signal (Modulated signal)

Procedure(1) Set test signal as in table(2) Measure throughput

SpecificationThroughput ≥95%

Wanted Signal

Interference Signal

(Modulated)

3. Receiver Characteristics

Page 37: Application Note: 3GPP LTE TDD BTS Measurement

Slide 36MG3700A/MS269xA-E-F-3

7.5 Adjacent Channel Selectivity and Narrow Band Blocking

MG3700A

BTS

Rx

Throughput

LTE IQproducer (option)

Transfer

Create expected LTE signal and interference signal pattern using LTE IQproducer.

Wanted Signal + Interference Signal (Modulated)

3. Receiver Characteristics

Generate combined signal from one MG3700AAdjust frequency offset and power level difference on screen No external coupler Fast level checking

Page 38: Application Note: 3GPP LTE TDD BTS Measurement

Slide 37MG3700A/MS269xA-E-F-3

7.5 Adjacent Channel Selectivity and Narrow Band Blocking

6RBs

15RBs

25RBs

50RBs

75RBs

100RBs

E-UTRA CH BW

OffsetEdge Center

Wanted signalInterference

signal (QPSK)

Wanted signalInterference

signal (QPSK)Procedure(1) Set test signal as in table(3) Measure throughput

SpecificationThroughput ≥95%

Wanted Signal

Interference Signal

(Modulated)

3. Receiver Characteristics

Page 39: Application Note: 3GPP LTE TDD BTS Measurement

Slide 38MG3700A/MS269xA-E-F-3

7.5 Adjacent Channel Selectivity and Narrow Band Blocking

MG3700A

BTS

Rx

Throughput Transfer

LTE IQproducer (option)

Multi-CarrierIQproducer

(option)

Clipping Function

(standard)

Wanted Signal + Interference Signal (1RB)

3. Receiver Characteristics

Generate combined signal from one MG3700AAdjust frequency offset and power level difference on screen No external coupler Fast level checking

Create wanted LTE signal pattern using LTE IQproducer.For interference signal, first create waveform pattern with specified 1 RB number near center frequency using LTE IQproducer. Then drift ½ RB (90 kHz) from center frequency (symmetrical) using Multi-Carrier IQproducer. Finally, cut nearby noise with ideal filter using clipping function.

Page 40: Application Note: 3GPP LTE TDD BTS Measurement

Slide 39MG3700A/MS269xA-E-F-3

7.6 Blocking

E-UTRA CH BW

Offset ±20 MHz max.Edge Center

E-UTRA CH BW

1 MHz

12.75 GHz

Procedure(1) Set test signal as in table(2) Measure throughput

SpecificationThroughput ≥95%

Wanted signal

Interference signal (Modulated/CW)

Interference signal (Modulated/CW)

Wanted Signal

Interference Signal

(Modulated)Expected

Signal

Interference Signal (CW)

3. Receiver Characteristics

Page 41: Application Note: 3GPP LTE TDD BTS Measurement

Slide 40MG3700A/MS269xA-E-F-3

7.6 Blocking

BTS

CW SG

MG3700AHybrid Interference Signal (CW)

Wanted Signal(1.4 to 20 MHz)

Rx

Throughput

BTS

MG3700A

Rx

Throughput

Wanted Signal + Interference Signal (Modulated)

Filter

LTE IQproducer (option)

3. Receiver Characteristics

Generate combined signal from one MG3700AAdjust frequency offset and power level difference on screen No external coupler Fast level checking

Page 42: Application Note: 3GPP LTE TDD BTS Measurement

Slide 41MG3700A/MS269xA-E-F-3

7.7 Receiver Spurious Emissions

Procedure(1) Transfer E-TM1.1 with Pmax from BTS(2) Terminate Tx port(3) Measure spurious at Rx port

SpecificationNot exceeding power level in above table

3. Receiver Characteristics

Page 43: Application Note: 3GPP LTE TDD BTS Measurement

Slide 42MG3700A/MS269xA-E-F-3

7.7 Receiver Spurious Emissions

MS269xA

Spurious Measurement

BTS

Rx

Control

Tx E-TM1.1Terminated

3. Receiver Characteristics

Page 44: Application Note: 3GPP LTE TDD BTS Measurement

Slide 43MG3700A/MS269xA-E-F-3

7.8 Receiver Inter-modulation

E-UTRA CH BW

Offset ±18.2 MHz max.

Edge CenterOffset ±7.5 MHz max.

Center

Procedure(1) Set test signal as in table(2) Measure throughput

SpecificationThroughput ≥95%

Wanted signal

Interference signal (Modulated/CW)

Interference Signal

(Modulated)Wanted Signal

Interference Signal (CW)

Interference signal (Modulated/CW)

3. Receiver Characteristics

Page 45: Application Note: 3GPP LTE TDD BTS Measurement

Slide 44MG3700A/MS269xA-E-F-3

7.8 Receiver Inter-modulation

BTS

MG3700AHybrid

Interference Signal (CW)

Rx

Throughput

Transfer Wanted Signal

+ Interference Signal (Modulated)

LTE IQproducer (option)

Multi-CarrierIQproducer

option

Same as 7.5 Adjacent Channel Selectivity and Narrow Band Blocking

CW SG

Generate combined signal from one MG3700A

Adjust frequency offset and power level difference on screen

3. Receiver Characteristics

Page 46: Application Note: 3GPP LTE TDD BTS Measurement

Slide 45MG3700A/MS269xA-E-F-3

7.8 Receiver Inter-modulation (Narrowband)

E-UTRA CH BW

Offset ±1.78 MHz max.

Edge CenterOffset ±345 kHz max.

Center

Procedure(1) Set test signal as in table(2) Measure throughput

SpecificationThroughput ≥95%

Wanted Signal

Interference Signal (CW)

Interference Signal

(Modulated 1RB)

Wanted signal

Interference signal (Modulated/CW)

3. Receiver Characteristics

Page 47: Application Note: 3GPP LTE TDD BTS Measurement

Slide 46MG3700A/MS269xA-E-F-3

7.8 Receiver Inter-modulation

BTS

MG3700AHybrid

Interference Signal (CW)

Rx

Throughput

Transfer Wanted Signal

+ Interference Signal (1RB)

LTE IQproducer (option)

Multi-CarrierIQproducer

(option)

Clipping Function

(standard)Same as 7.5 Adjacent Channel Selectivity and Narrow Band Blocking

CW SG

3. Receiver Characteristics

Generate combined signal from one MG3700A

Adjust frequency offset and power level difference on screen

Page 48: Application Note: 3GPP LTE TDD BTS Measurement

Anritsu Corporation 5-1-1 Onna, Atsugi-shi, Kanagawa, 243-8555 JapanPhone: +81-46-223-1111Fax: +81-46-296-1238

• U.S.A.Anritsu Company1155 East Collins Blvd., Suite 100, Richardson, TX 75081, U.S.A.Toll Free: 1-800-267-4878Phone: +1-972-644-1777Fax: +1-972-671-1877

• CanadaAnritsu Electronics Ltd.700 Silver Seven Road, Suite 120, Kanata, Ontario K2V 1C3, CanadaPhone: +1-613-591-2003 Fax: +1-613-591-1006

• Brazil Anritsu Eletrônica Ltda.Praca Amadeu Amaral, 27 - 1 Andar01327-010-Paraiso-São Paulo-BrazilPhone: +55-11-3283-2511Fax: +55-11-3288-6940

• Mexico Anritsu Company, S.A. de C.V.Av. Ejército Nacional No. 579 Piso 9, Col. Granada11520 México, D.F., MéxicoPhone: +52-55-1101-2370Fax: +52-55-5254-3147

• U.K.Anritsu EMEA Ltd.200 Capability Green, Luton, Bedfordshire, LU1 3LU, U.K.Phone: +44-1582-433200 Fax: +44-1582-731303

• FranceAnritsu S.A.16/18 avenue du Québec-SILIC 72091961 COURTABOEUF CEDEX, FrancePhone: +33-1-60-92-15-50Fax: +33-1-64-46-10-65

• GermanyAnritsu GmbHNemetschek Haus, Konrad-Zuse-Platz 1 81829 München, Germany Phone: +49-89-442308-0 Fax: +49-89-442308-55

• ItalyAnritsu S.p.A.Via Elio Vittorini 129, 00144 Roma, ItalyPhone: +39-6-509-9711 Fax: +39-6-502-2425

• SwedenAnritsu ABBorgafjordsgatan 13, 164 40 KISTA, SwedenPhone: +46-8-534-707-00 Fax: +46-8-534-707-30

• FinlandAnritsu ABTeknobulevardi 3-5, FI-01530 VANTAA, FinlandPhone: +358-20-741-8100Fax: +358-20-741-8111

• DenmarkAnritsu A/SKirkebjerg Allé 90, DK-2605 Brøndby, DenmarkPhone: +45-72112200Fax: +45-72112210

• SpainAnritsu EMEA Ltd. Oficina de Representación en EspañaEdificio VeganovaAvda de la Vega, n˚ 1 (edf 8, pl 1, of 8)28108 ALCOBENDAS - Madrid, SpainPhone: +34-914905761Fax: +34-914905762

• RussiaAnritsu EMEA Ltd. Representation Office in RussiaTverskaya str. 16/2, bld. 1, 7th floor.Russia, 125009, MoscowPhone: +7-495-363-1694Fax: +7-495-935-8962

• United Arab EmiratesAnritsu EMEA Ltd.Dubai Liaison OfficeP O Box 500413 - Dubai Internet CityAl Thuraya Building, Tower 1, Suit 701, 7th FloorDubai, United Arab EmiratesPhone: +971-4-3670352Fax: +971-4-3688460

• SingaporeAnritsu Pte. Ltd.60 Alexandra Terrace, #02-08, The Comtech (Lobby A)Singapore 118502Phone: +65-6282-2400Fax: +65-6282-2533

• IndiaAnritsu Pte. Ltd. India Branch Office3rd Floor, Shri Lakshminarayan Niwas, #2726, 80 ft Road, HAL 3rd Stage, Bangalore - 560 075, IndiaPhone: +91-80-4058-1300Fax: +91-80-4058-1301

• P.R. China (Hong Kong)Anritsu Company Ltd.Units 4 & 5, 28th Floor, Greenfield Tower, Concordia Plaza, No. 1 Science Museum Road, Tsim Sha Tsui East, Kowloon, Hong KongPhone: +852-2301-4980Fax: +852-2301-3545

• P.R. China (Beijing)Anritsu Company Ltd.Beijing Representative OfficeRoom 2008, Beijing Fortune Building, No. 5, Dong-San-Huan Bei Road, Chao-Yang District, Beijing 100004, P.R. ChinaPhone: +86-10-6590-9230Fax: +86-10-6590-9235

• KoreaAnritsu Corporation, Ltd.8F Hyunjuk Building, 832-41, Yeoksam Dong, Kangnam-ku, Seoul, 135-080, KoreaPhone: +82-2-553-6603Fax: +82-2-553-6604

• AustraliaAnritsu Pty. Ltd.Unit 21/270 Ferntree Gully Road, Notting Hill, Victoria 3168, AustraliaPhone: +61-3-9558-8177Fax: +61-3-9558-8255

• TaiwanAnritsu Company Inc.7F, No. 316, Sec. 1, Neihu Rd., Taipei 114, TaiwanPhone: +886-2-8751-1816Fax: +886-2-8751-1817

Specifications are subject to change without notice.

0904

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No. MG3700A/MS269xA-E-F-3-(1.00) Printed in Japan 2009-7 PRS