Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

Simple Drive Requirement N-CH BVDSS 40V Good Thermal Performance RDS(ON) 28mΩ

Fast Switching Performance ID 15AP-CH BVDSS -40V

RDS(ON) 42mΩDescription ID -12A

Absolute Maximum RatingsSymbol Parameter Rating Units

N-channel P-channelVDS Drain-Source Voltage 40 -40 VVGS Gate-Source Voltage ±16 ±16 VID@TA=25 Continuous Drain Current 15.0 -12.0 AID@TA=70 Continuous Drain Current 12.0 -10.0 AIDM Pulsed Drain Current1 50 -50 APD@TA=25 Total Power Dissipation 10.4 W

Linear Derating Factor 0.083 W/TSTG Storage Temperature Range -55 to 150

TJ Operating Junction Temperature Range -55 to 150

Symbol Value UnitRthj-c Maximum Thermal Resistance, Junction-case 12 /WRthj-a Maximum Thermal Resistance, Junction-ambient 110 /W

Data and specifications subject to change without notice200809235

Parameter

1

Thermal Data

AP4525GEHRoHS-compliant Product

S1

TO-252-4L

G1S2

G2

D1/D2

Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.

S1

G1

D1

S2

G2

D2

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Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 40 - - V

ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA - 0.03 - V/

RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=6A - - 28 mΩ

VGS=4.5V, ID=4A - - 32 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=6A - 6 - S

IDSS Drain-Source Leakage Current VDS=40V, VGS=0V - - 1 uA

Drain-Source Leakage Current (Tj=70oC) VDS=32V, VGS=0V - - 25 uAIGSS Gate-Source Leakage VGS=±16V - - ±30 uA

Qg Total Gate Charge2 ID=6A - 9 14 nC

Qgs Gate-Source Charge VDS=20V - 1.5 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC

td(on) Turn-on Delay Time2 VDS=20V - 7 - ns

tr Rise Time ID=6A - 20 - ns

td(off) Turn-off Delay Time RG=3Ω,VGS=10V - 20 - ns

tf Fall Time RD=3.3Ω - 4 - ns

Ciss Input Capacitance VGS=0V - 580 930 pF

Coss Output Capacitance VDS=25V - 100 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF

Rg Gate Resistance f=1.0MHz - 2 3 Ω

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2 IS=15A, VGS=0V - - 1.8 Vtrr Reverse Recovery Time2 IS=6A, VGS=0V - 20 - nsQrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC

2

AP4525GEH

N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)www.datasheet4u.com

Symbol Parameter Test Conditions Min. Typ. Max. UnitsBVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - VΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25,ID=-1mA - -0.03 - V/RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A - - 42 mΩ

VGS=-4.5V, ID=-3A - - 60 mΩVGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 Vgfs Forward Transconductance VDS=-10V, ID=-5A - 5 - SIDSS Drain-Source Leakage Current VDS=-40V, VGS=0V - - -1 uA

Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uAIGSS Gate-Source Leakage VGS=±16V - - ±30 uA

Qg Total Gate Charge2 ID=-5A - 9 24 nC

Qgs Gate-Source Charge VDS=-20V - 2 - nC

Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 5 - nC

td(on) Turn-on Delay Time2 VDS=-20V - 8.5 - ns

tr Rise Time ID=-5A - 15 - ns

td(off) Turn-off Delay Time RG=3Ω,VGS=-10V - 27 - ns

tf Fall Time RD=4Ω - 25 - ns

Ciss Input Capacitance VGS=0V - 770 1230 pF

Coss Output Capacitance VDS=-20V - 165 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 115 - pF

Rg Gate Resistance f=1.0MHz - 6 9 Ω

Source-Drain DiodeSymbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2 IS=-12A, VGS=0V - - -1.8 Vtrr Reverse Recovery Time2 IS=-5A, VGS=0V - 20 - nsQrr Reverse Recovery Charge dI/dt=-100A/µs - 16 - nC

Notes:1.Pulse width limited by Max. junction temperature.2.Pulse width <300us , duty cycle <2%.3.N-CH , P-CH are same .

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

3

AP4525GEH

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)www.datasheet4u.com

N-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

4

AP4525GEH

0

10

20

30

40

50

0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T A = 25 o C

10V7.0V5.0V4.5V

V G =3.0V

0

2

4

6

8

10

12

14

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

V SD , Source-to-Drain Voltage (V)

I S(A

)

T j =25 o CT j =150 o C

0.4

0.8

1.2

1.6

-50 0 50 100 150

T j , Junction Temperature ( o C)

Nor

mal

ized

VG

S(th

) (V

)

0

10

20

30

40

50

0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T A = 150 o C

10V7.0V5.0V4.5V

V G =3.0V

20

40

60

80

100

120

2 4 6 8 10

V GS , Gate-to-Source Voltage (V)

RD

S(O

N) (

mΩ

)

I D = 4 AT A =25 o C

0.8

1.2

1.6

25 50 75 100 125 150

T j , Junction Temperature ( o C)

Nor

mal

ized

RD

S(O

N)

I D = 6 AV G =10V

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AP4525GEHN-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

5

Q

VG

4.5V

QGS QGD

QG

Charge

0

4

8

12

0 5 10 15 20

Q G , Total Gate Charge (nC)

V GS ,

Gat

e to

Sou

rce

Vol

tage

(V) I D =6A

V DS =20V

10

100

1000

1 5 9 13 17 21 25 29

V DS , Drain-to-Source Voltage (V)

C (p

F)

f=1.0MHz

C iss

C oss

C rss

0.1

1

10

100

0.1 1 10 100

V DS , Drain-to-Source Voltage (V)

I D (A

)

T A =25 o CSingle Pulse

100us

1ms10ms

100ms1sDC

0

10

20

30

40

50

0 2 4 6 8

V GS , Gate-to-Source Voltage (V)

I D ,

Dra

in C

urre

nt (A

)

T j =150 o CT j =25 o C

V DS =5V

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Nor

mal

ized

Ther

mal

Res

pons

e (R

thjc)

PDM

Duty factor = t/TPeak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

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P-Channel

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature

6

AP4525GEH

0

10

20

30

40

50

0 1 2 3 4 5 6

-V DS , Drain-to-Source Voltage (V)

-ID ,

Dra

in C

urre

nt (A

)

T A = 25 o C -10V-7.0V-5.0V-4.5V

V G = - 3.0V

20

50

80

110

140

170

200

2 4 6 8 10

-V GS ,Gate-to-Source Voltage (V)

RD

S(O

N) (

mΩ

)

I D = -3 AT A =25 o C

0.4

0.8

1.2

1.6

-50 0 50 100 150

T j , Junction Temperature ( o C)

Nor

mal

ized

-V G

S(th

) (V

)

0

10

20

30

40

50

0 2 4 6 8

-V DS , Drain-to-Source Voltage (V)

-ID ,

Dra

in C

urre

nt (A

)

T A = 150 o C

-10V-7.0V-5.0V-4.5V

V G = - 3.0V

0.8

1.0

1.2

1.4

1.6

25 50 75 100 125 150

T j , Junction Temperature ( o C)

Nor

mal

ized

RD

S(O

N)

I D = -5AV G = -10V

0

2

4

6

8

10

12

0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5

-V SD , Source-to-Drain Voltage (V)

-IS(

A)

T j =25 o CT j =150 o C

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AP4525GEHP-Channel

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform

7

0

4

8

12

0 4 8 12 16 20

Q G , Total Gate Charge (nC)

-VG

S , G

ate

to S

ourc

e V

olta

ge (V

)

I D = -5 AV DS = - 2 0 V

10

100

1000

10000

1 5 9 13 17 21 25 29

-V DS , Drain-to-Source Voltage (V)

C (p

F)

f=1.0MHz

C iss

C oss

C rss

0.1

1

10

100

0.1 1 10 100

-V DS , Drain-to-Source Voltage (V)

-ID

(A)

T c =25 o CSingle Pulse

100us

1ms

10ms100ms

1sDC

0

10

20

30

40

50

0 2 4 6 8

-V GS , Gate-to-Source Voltage (V)

-ID ,

Dra

in C

urre

nt (A

) T j =150 o CT j =25 o C

V DS =-5V

Q

VG

-4.5V

QGS QGD

QG

Charge

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Nor

mal

ized

The

rmal

Res

pons

e (R

thjc)

PDM

Duty factor = t/TPeak Tj = PDM x Rthjc + TC

t

T

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

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Package Outline : TO-252(4L)

MillimetersMIN NOM MAX

A 6.40 6.6 6.80B 5.2 5.35 5.50C 9.40 9.80 10.20D 2.40 2.70 3.00PS 0.50 0.65 0.80

E3 E3 3.50 4.00 4.50R 0.80 1.00 1.20G 0.40 0.50 0.60H 2.20 2.30 2.40J 0.45 0.50 0.55K 0.00 0.075 0.15L 0.90 1.20 1.50M 5.40 5.60 5.80

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-252(4L)

SYMBOLS

1.27 REF.

ADVANCED POWER ELECTRONICS CORP.

A

B

C

M

D

H

J

K

L

Part NumberPackage Code

4525GEH

YWWSSS Date Code (YWWSSS) Y：Last Digit Of The Year WW：Week SSS：Sequence

LOGO

GS P

R

meet Rohs requirement

8

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