sxh189
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7/29/2019 SXH189
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PreliminaryPreliminary
Product Description
1
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any StanfordMicrodevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC http://www.stanfordmicro.com522 Almanor Ave., Sunnyvale, CA 94085EDS-101247 Rev D
SXH-1895-2000 MHz Medium Power
GaAsHBT Amplifier
Product Features
Patented High Reliability GaAs HBT Technolo
High 3rd Order Intercept : +39 dBm typ.
at 1960 MHz
Surface-Mountable Power Plastic Package
Applications
PCS, Cellular Systems
High Linearity IF Amplifiers
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Stanford Microdevices SXH-189 amplifier is a high efficiency
GaAs Heterojunction Bipolar Transistor (HBT) MMICs housed
in low-cost surface-mountable plastic package. These HBT
MMICs are fabricated using molecular beam epitaxial growth
technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz cellular,
ISM, WLL and narrowband PCS applications.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
0
5
10
15
20
25
3035
40
45
850 MHz 1960 MHz
Typical IP3, P1dB, Gain
dBm
IP3 IP3
P1dB P1dB
Gain(dB)
Gain(dB)
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7/29/2019 SXH189
2/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com
2522 Almanor Ave., Sunnyvale, CA 94085
EDS-101247 Rev D
Preliminary
SXH-189 5-2000 MHz Power Amplifier
Preliminary
34
36
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40
42
0 3 6 9 12 15
34
36
38
40
42
44
800 825 850 875 900 925 950
20
21
22
23
24
25
800 825 850 875 900 925 950
-35
-30
-25
-20
-15
-10
-5
0
5
800 850 900 950
15
17
19
21
23
25
800 825 850 875 900 925 950
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 10
25C
-40C
85C
P1dB vs Frequency
MHz
dBm
850 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3
Input/Output Return Loss,
Isolation vs Frequency
MHz
dB
S11
S22
MHz
Gain vs. Frequency
dB
25C
85C-40C
Third Order Intercept vs. Frequency
(POUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
POUT
per tone (dBm)
dB
m
S12
25C
85C
25C
85C-40C
Device Current vs. Source Voltage
VS(V)
DeviceCurrent(mA)
-40C
85C
-40C25C
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7/29/2019 SXH189
3/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com
3522 Almanor Ave., Sunnyvale, CA 94085
EDS-101247 Rev D
Preliminary
SXH-189 5-2000 MHz Power Amplifier
Preliminary
33
35
37
39
41
43
0 3 6 9 12 15
35
37
39
41
43
1930 1940 1950 1960 1970 1980 1990
20
21
22
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25
1930 1940 1950 1960 1970 1980 1990
-35
-30
-25
-20
-15
-10
-5
0
1930 1940 1950 1960 1970 1980 1990
10
12
14
16
18
20
1930 1940 1950 1960 1970 1980 1990
1960 MHz Application Circuit Data, Icc=110mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3
P1dB vs Frequency
MHz
dBm
MHz
Gain vs. Frequency
dB
dB
Input/Output Return Loss,
Isolation vs Frequency
MHz
S11
S22
25C 85C
-40C
Third Order Intercept vs. Frequency
(POUT
per tone = 11dBm)
MHz
dBm
Third Order Intercept vs Tone Power
POUT
per tone (dBm)
dB
m
S12
25C
85C
25C85C
-40C
-40C
0
20
40
60
80
100
120
140
160
180
0 2 4 6 8 10
25C
-40C
85C
Device Current vs. Source Voltage
VS(V)
DeviceCurrent(mA)
85C
25C
-40C
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7/29/2019 SXH189
4/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com
4522 Almanor Ave., Sunnyvale, CA 94085
EDS-101247 Rev D
Preliminary
SXH-189 5-2000 MHz Power Amplifier
Preliminary850 MHz Application Circuit
Active Current Feedback Bias Circuit (for 5V supply)
850 MHz Schematic
850 MHz Active Bias Evaluation Board Layout
SXH-189
220
1.8 K9
7509
100 pF5.6 pF
100 pF
33 nH
Rbias=4.3
0.1
F
(SIZE A) 68 pF
1000 pF
Vs = 5V
1
2
3
46
5
(Rohm)
UMZ1N
Z=50 , 12.9
Vdev
Voltage Feed Resistor Bias Circuit (for > 7V supply)
850 MHz Schematic
850 MHz Evaluation Board Layout
SXH-189
100 pF
100 pF
33 nH
Rbias
Vs
5.6 pF
Z=50 , 12.9
180
390
0.1
F
(SIZE A)
1000pF
68pF
33 nHRFoutRFin
100pF100pF
100pF
1000pF
0.1uF
Rbias
33nH 33nH
390 Ohms
180 Ohms
SXH-1895.6pF
STANFORD MICRODEVICESSOT-89 Eval BoardECB-101499 Rev A
68pF
1000pF
0.1 uF
100pF 100pF
33nH
5.6pF
4.3
1.8K
750
220
1
UMZ1N
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-100xxx- SOT-89
RF IN RF OUT
GND
VCC
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)Bd(ssoLnruteRtupnI 8.22-
)mBd(3PItuptuO *7.73
)mBd(Bd1P 0.32
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
NOTE: Reference Application Note AN-023 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
-
7/29/2019 SXH189
5/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com
5522 Almanor Ave., Sunnyvale, CA 94085
EDS-101247 Rev D
Preliminary
SXH-189 5-2000 MHz Power Amplifier
Preliminary
RFoutRFin
68pF68pF
22pF
1000pF
0.1uF
Rbias
22nH 22nH
390 Ohms
180 Ohms
SXH-189 1.8pF
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
1960 MHz Application Circuit
Active Current Feedback Bias Circuit (for 5V supply)
1960 MHz Schematic
1960 MHz Active Bias Evaluation Board Layout
SXH-189
220
1.8 K9
7509
68 pF
1.2 pF
22nH
Rbias=4.3
0.1
F
(SIZE A) 22 pF
1000 pF
Vs = 5V
1
2
3
46
5
(Rohm)
UMZ1N
68pF
Z=50 , 45.5
Vdev
Voltage Feed Resistor Bias Circuit (for > 7V supply)
1960 MHz Schematic
1960 MHz Evaluation Board Layout
SXH-18968 pF
22nH
Rbias
Vs
1.8 pF
68pF
Z=50 , 45.5
22nH
1000pF
390
180
0.1
F
(SIZE A) 22pF
1
22pF
1000pF
0.1 uFUMZ1N
220
750
1.8K
4.3
68pF 68pF
1.2pF
22nH
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-100xxx- SOT-89
RF IN RF OUT
GND
VCC
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)sV(egatloVylppuS V7 V8 V01 V21
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)Bd(niaGlangiSllamS 9.41
)Bd(ssoLnruteRtupnI 1.21-
)mBd(3PItuptuO *0.83
)mBd(Bd1P 3.32
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
NOTE: Reference Application Note AN-023 for more
information on Active Current Feedback Bias Circuit.
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
-
7/29/2019 SXH189
6/6Phone: (800) SMI-MMIC http://www.stanfordmicro.com
6522 Almanor Ave., Sunnyvale, CA 94085
EDS 101247 R D
Preliminary
SXH-189 5-2000 MHz Power Amplifier
Preliminary
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
DIMENSIONS ARE IN INCHES [MM]
PCB Pad Layout
The part will be symbolized with a XA2
designator on the top surface of the package.
Part Symbolization
Recommended via and mounting hole pattern
(For RF Ground and Thermal considerations)
Part Number Ordering Information
rebmuNtraP leeRrePseciveD eziSleeR
981-HXS 0001 "7
Package Dimensions
XA24
321
Caution: ESD sensitiveAppropriate precautions in handling, packaging
and testing devices must be observed.
Absolute Maximum Ratings
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Pin Description
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