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2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
Multiplexed EUV Sources based on a Compact Module with High Irradiance and Low Etendue
for Metrology Applications
Peter Choi, Sergey V. Zakharov +, Raul Aliaga-Rossel, AdriceBakouboula, Otman Benali, Philippe Bove, Michele Cau, Grainne Duffy, Carlo Fanara, Wafa Kezzar, Blair Lebert,
Keith Powell, Ouassima Sarroukh, Luc Tantart, Clement Zaepffel, Vasily S. Zakharov
NANO‐UV sas, 16‐18 av du Québec, SILIC 705, Villebon/Yvette 91140, FranceEPPRA sas, 16 av du Québec, SILIC 706, Villebon/Yvette 91140, France+ also with RRC Kurchatov Institute, Moscow, Russia
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
OUTLINE
High brightness EUV sources are required
NANO-UV compact EUV source module· enhanced plasma radiance in resistive regime
· module characteristics
· progress over the last six months
· highly charged Xe
ion EUV emission
Multiplexing principles & realization· HYDRA4-ABI™
prototype system
· HYDRA12-AIMS™ source prototype
High brightness EUV sources are required
NANO-UV compact EUV source module· enhanced plasma radiance in resistive regime
· module characteristics
· progress over the last six months
· highly charged Xe
ion EUV emission
Multiplexing principles & realization· HYDRA4-ABI™
prototype system
· HYDRA12-AIMS™ source prototype
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland3 – Resist: resolution, sensitivity, LER
Remaining Focus Areas
- light source for Litho and mask inspection critical -
EUVL Symposium, Prague 2009
EUVL Symposium, Kobe 2010
1 - Mask yield & defect inspection/review infrastructure
2 - Long-term source operation with 200W at the IF for 10mJ/cm2 resist sensitivity
3 – Resist: resolution, sensitivity, LER
1 - Mask yield & defect inspection/review infrastructure
2 - Long-term source operation with 115 W at the IF for 5mJ/cm2 resist sensitivity or with 200W at the IF for 10mJ/cm2 resist sensitivity
(for 22nm HP)
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
Metrology Source Requirements•
actinic metrology tools required
ABI –
actinic mask blank inspection
AIMS – aerial imaging microscope
APMI – actinic patterned mask inspection
in‐situ AI – at scanner reticle
cleanliness inspection
•
a very different source compared with Litho sources
illumination field size ‐
much smaller (0.01 ‐
1 mm)2
power density on target ‐
irradiance much higher
etendue
‐
much smaller ( ~10‐2
‐
10‐4
mm2.sr )
source brightness ‐
much higher ABIAIMSAPMI – 10 100 >1000 W/mm2·sr at-wavelength radiance
•
sufficient throughput
(300 mm Wafer )
mask blank inspection < 45 mn
off‐line pattern mask inspection throughput of < 3 hr for full mask
at‐line pattern mask inspection throughput of < 1.5 hr for full mask
aerial imaging throughput of < 1 hr for full mask ( 50 defects /site inspection)
•
different optics compared with Litho scanner
small field size ‐
diffractive optics
small NA on Mask to match projection optics
Source brighter than a synchrotron is needed
‐
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
The Core TechnologyThe Core Technology
ii--SoCoMoSoCoMo™™
CYCLOPSCYCLOPS™™ -- GEN II cellGEN II cell
Anode chamber +
water cooled
structure
Plasma expansion
chamber - water cooled
collimator structure
Cathode chamber +
shielding shell + gas distribution
+ air cooling
Physical Dimensions:Physical Dimensions:•
Source
: 150 mm diameter, 520 mm length, 7 kg•
Instrument rack
: 1300 x 600 x 800 mm, 200 kg
The emitting plasma in CYCLOPS™ is generated by a fast micro plasma pulsed discharge incorporating the i-SoCoMo™ technology, with an intrinsic plasma structure to provide photon collection and delivery. The Source module can be optimized to operate at high power or high irradiance.
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
Measured performance• stored energy 400mJ• discharge in He/…/Xe admixture• use SXUV20 Mo/Si filtered diode (IRD) with Al
(110 nm) on Si3N4 (100 nm) filter = 3 nm EUV band (12.4 nm -15.4 nm)
• typical etendue 1.7 E-2 mm2.sr
0 5 10 15 20 25 30 35 40 45 50 55 600
100
200
300
400
500 Profil@70cm (21kV14mtorr ) Gauss fit of A70cm_Maxpulse
Data: A70cm_MaxpulseModel: Gauss Chi^2/DoF = 901.21631R^2 = 0.90311 y0 14.15126 ±5.06039xc 28.22778 ±0.17038w 5.56915 ±0.36386A 2180.03701 ±137.68802
Pho
todi
ode
sign
al (m
V)
Distance (mm)10 20 30 40 50 60 70 80 90
0
250
500
750
1000
Data: A120cm_MaxpulseModel: Gauss Chi^2/DoF = 3016.85555R^2 = 0.94528 y0 47.83777 ±9.27854xc 47.0658 ±0.21236w 12.01875 ±0.47686A 10359.83949 ±432.4633
Profil@120cm (21kV20mtorr ) Gauss fit of A120cm_Maxpulse
Pho
todi
ode
sign
al (m
V)
Distance (mm)
Distance source
to diode (cm)
Irrandiance@ 1kHzPh/cm2/s
BeamFWHM(mm)
Radiation half angle divergence
(deg)
70 5.7 E17 6.60.43°120 8.7 E16 14.1
Radiation solid angle =1.8 e-4 sr
Scanned
signal profile @ 70cm Scanned
signal profile @120cm
Source characteristics ‐
GEN II i‐SoCoMo
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
Gen II EUV Source - characteristics & optimization from Z* modelling
0
200
400
600
800
1000
200 250 300 350 400 450 500 550 600
In-b
and
EUV
ener
gy p
er s
hot,
uJ
Stored energy, mJ
Energy scan calculated
(in 2% band)
Optimization by gas mixture pressure
EUV source scan by stored electrical energy
0
200
400
600
800
1000
0 5 10 15 20 25 30
In-b
and
EUV
ener
gy p
er s
hot,
uJ
Pressure, a.u.
885J/shot
496mJ stored energy
(for more details see poster: SergeyV.Zakharov et al)
Resistive regime
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
Progress over the last six months ‐ irradiance vs
stored energy
-100 -50 0 50 100 150 200 250
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
19.1 kV
Phot
odio
de s
igna
l (V)
Time (ns)
20.3 kV 20.9 kV 21.3 kV 21.8 kV 22.0 kV
0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.320.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Irrad
ianc
e at
the
prof
ile m
axim
um
(x 1
0e17
ph/
cm2/
s)
Stored energy (J)
Results presented at SPIE
February 2010
-20 0 20 40 60 80 100
0.0
0.5
1.0
1.5
2.0
2.5 19.9kV 20.5kV 21.3kV 22kV 22.6kV 23.1kV
Phot
odio
de s
igna
l (V)
Time (ns)
0.36 0.38 0.40 0.42 0.44 0.46 0.48 0.50 0.52
1
2
3
4
5
6
7
8
Irr
adia
nce
at th
e si
gnal
pea
k
(x 1
0e17
ph/
cm2/
s)
Stored energy (J)
Current Results
2.5 fold increase in the
irradiance
2.5 fold increase on
power
At same operating voltage
1.5 time increase on the
stored energy
Improvement on the
gas mixture and flow
rate
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
EUV Emission of Highly Charged Xe Ions - from e-beam triggered discharge plasma
5 10 15 20 25
05000100001500020000250003000035000400004500050000
o.4
o.3
o.2
o.1
Wavelength (nm)
pressure (m
bar)
Inte
nsity
(arb
. uni
ts)
0
.1r)
in
EUV MeasurementCapillary discharge. VUV spectrograph data
Bright EUV emission in 2% band at 13.5 nm can be achieved from highly charged xenon ions in plasma with small percentage of fast electrons
(for more details see poster: Vasily S. Zakharov et al)
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
10-5
10-4
10-3
10-2
10-1
100
101
102
10-9 10-7 10-5 10-3 10-1
R=0.04m mR=0.08m mR=0.16m mR=0.31m mR=0.625mmR=1.25m mR=2.5m mR=5mm
EUV
Rad
ianc
e, M
W/m
m2
sr
Mass Depth (rho*r), g/cm2
Multiplexing - a solution for high power & brightness
Z* Scan
tin• Small size sources, with low enough etendue E1 =As
<< 1 mm2 sr can be multiplexed.
• The EUV power of multiplexed N sources is
The EUV source power meeting the etendue requirements increases as N1/2
• This allows efficient re-packing of radiators from 1 into N separate smaller volumes without losses in EUV power
fNEPEUV
• Spatial-temporal multiplexing: The average brightness of a source and output power can be increased by means of spatial-temporal multiplexing with active optics system, totallizing sequentially the EUV outputs from multiple sources in the same beam direction without extension of the etendue or collection solid angle
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
HYDRA4-ABI™
prototype system
A compact EUV Source for Mask Blank Metrology
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
• Beam Distribution along Optical Axis
• Radiations observed on a fluorescent screen at various distance along the beam axis
HYDRA4‐ABI™ ‐
Spatial multiplexing
All 4 sources operating simultaneously
7 cm
1 cell UV image on screen
Z= 50 mmZ= 7 mm
Z= 0 mm @ Cross Over
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
HYDRA4‐ABI™ ‐
Source multiplexing
• 4 Cells Simultaneous Operation @ 20 KV; 1 KHz
• Untriggered
discharges within 100 ns
• Filtered (3 nm band) photodiode signals records • 1 Cell discharge
200 ns
2 V
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
• 4 cells operating @ 1 KHz @ 22 KV• Cells capacity : 1.2nF each• Operating Pressure ; 30mTorr
HYDRA4‐ABI™
- Spatial multiplexing
9.6 1013
ph/pulse 1.4mJ/pulse 1.4 W @ 1 KHz
4 Beams simultaneousSummation of 4 single Beams
Profile scans recorded on SUXV 20A ( Mo/Si ) Diode (3nm EUV band)positioned @ 70 cm perpendicular to the optical beam axis
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
HYDRA4‐ABI™ ‐
Product for Blank Inspection tool
SpecificationsSpecificationsEUV performance:EUV performance:
Wavelength
: 13.5 nm
Irradiance
: 0,6 W@ IF
Radiant Brightness
: 60W/mm².sr inBand
2% @ IF
Typical Etendu
: 10‐2
mm².sr
Pulse repetition rate
: 3 kHz
Operation Gas
: He + N2
+ Xe
Source operating pressure : 60 mTorr
typical
Lifetime Time before service : 1 billions shots
Source size
: apertured
to 2mm spot in each beamUtility requirements:Utility requirements:
Electrical
: 380‐400V, 3Ø, 50/60 Hz, 3x32A
Cooling
: Water cooled (8 litres
per minutes, 15°C ‐
25°C inlet)
He Ar
Xe
: 3 bar inletPhysical Specifications:Physical Specifications:
Source
: 900 diameter, 650 mm length, 120 kg
Instrument rack
: 1760 x 1000 x 850 mm, 200 kgCompliance:Compliance:
HYDRA4‐
ABI™
: CE Mark, SEMI S2: CE Mark, SEMI S2‐‐07090709
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
HYDRA12‐AIMS™
- Spatial multiplexing with variable sigma
- prototype system
12 Units operatingsequentially @ 1KHz
A EUV Source optimized for Aerial Image Measurements in Patterned Mask Metrology
Viewing into the 12 Units
operating @ 1KHz
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
HYDRA12‐AIMS™ - Spatial multiplexing with variable sigma
• Design Specifications – 100 W/mm2.sr in‐band 2% EUV radiant brightness– 2.4W at the IF– etendue ‐
2.4 10‐2
mm2.sr (50% fill pupil)
– source area ‐ 4 mm2
/ variable sigma– optimized for aerial image measurements– 12x
i‐SoCoMo units, 5 kHz working each
– no debris / membrane filter– variable pupil fill and sigma
• Current Status– system characterization– single unit optimization– ML mirrors modelling– life time components testing
curved ML plane ML
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
ROADMAP EUV SourceProjections
EUV SourceProjections
EUV SourceProjections
EUV SourceProjections
Attribute NanoUV NanoUV NanoUV NanoUVDate Current Mid-year 2011 Current Year-end 2011
Type of source
Level of integration ALPHA DEMO BETA PRODUCT ALPHA DEMO BETA PRODUCT
Demonstrated operating time 1b shots 5b shots 1b shots 5b shots
Wavelength (nm) 13.5 13.5 13.5 13.5Measured average EUV power (13.5 nm, 2 % FWHM), after collector (W)
0.6 (4 units@3 kHz, to include 1 ML) 0.6 0.8 (12 units@3kHz
to include 1 ML) 2.4
Source area (mm2) 7 TBD 4 variable sigma
Etendue of source output (mm2 sr) 1.00E-02 1.00E-02 2.40E-02 2.40E-02
Max. solid angle to system (sr) 2.00E-02 2.00E-02 TBD TBD
EUV brightness (13.5 nm, 2 % FWHM) (Wmm-2sr-1) 60 60 33 100
Repetition rate (kHz) 3 3 <5 5
Integrated energy stability (%) 3% rms 0.3% rms 3% rms 0.3% rms
Plasma size stability (mm) 0 0 0 0
Plasma position stability (mm) 0 0 0 0
Source cleanliness (10% throughput loss for ML) 1b shots 25b shots 1b shots 25b shots
Spectral purity
20 - 130 nm <1E-3 <1E-3 <1E-3 <1E-3
130 - 400 nm (DUV/UV) <1E-3 <1E-3 <1E-3 <1E-3
>= 400 nm (IR/VIS), including 10.6 mm <1E-3 <1E-3 <1E-3 <1E-3
HYDRA™-ABI HYDRA™-AIMS
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
SUMMARY
The very high brightness of the light sources necessary for inspection are beyond
what is currently available. The self‐absorption of radiation limits the in‐band EUV radiance of the source plasma and makes it difficult to attain the necessary
brightness and power from a conventional single unit EUV source.
NANO‐UV is delivering a new generation of compact EUV light sources with an
intrinsic photon collector, the i‐SoCoMo™ concept, where a micro plasma pulsed
discharge source is integrated to a photon collector based on an in situ active
plasma structure. The source is characterized by high brightness, low etendue and very high irradiance, at moderate output power.
Time resolved measurements show substantial power/ irradiance increase
achievable in GEN II cell compared with previous data
Extrapolation suggests the source can deliver in 2% band around 13.5 nm ~ 1.6W
power to a spot of under 1 cm diameter ~ 16W average at 3 kHz, with 0.4J stored energy per pulse
Etendue
increases rapidly with increasing energy stored and EUV output but
remains < 10‐2 mm2.sr at the maximum parameters tested
Using a number of such source modules, we are developing light sources with
the requisite brightness and power to address the mask metrology needs, with
spatial and temporal multiplexing – the HYDRA™ design.
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
• R&D team & collaborators
– Pontificia Universidad Catolica
de Chile
– RRC Kurchatov Institute, Moscow, Russia
– Keldysh Institute of Applied Mathematics RAS,
Moscow, Russia– University College Dublin–
King’s College London
• Sponsors - EU & French Government– ANR‐
EUVIL
– FP7 IAPP– OSEO‐ANVAR
• RAKIA
Acknowledgement
2010 International Workshop on EUV SourcesUCD, Dublin
Ireland
A New Technical
Capability Arising
– Ultra high brightness– modular construction– small foot print– low cost of ownership– adaptable to user needs
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