mgpa test results first results presented 25 th june – repeat here + some new results
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9th July, 2003 CMS Ecal MGPA test results 1
MGPA test results
first results presented 25th June – repeat here + some new results
testing begun 29th May on bare die (packaging still underway)
two chips looked at so far – both working (all results here from one only)
OUTLINE
introduction test setup description analogue performance
gainlinearitymatching
noise (barrel and endcap)5 Mrads irradiation results
I2C offset adjust calibration feature power consumption summary
9th July, 2003 CMS Ecal MGPA test results 2
MGPA target specifications
Parameter Barrel End-Cap
fullscale signal 60 pC 16 pC
noise level 10,000e (1.6 fC) 3,500e (0.56 fC)
input capacitance ~ 200 pF ~ 50 pF
output signals(to match multi-channel ADC)
differential 1.8 V, +/- 0.45 V around Vcm = (Vdd-Vss)/2 = 1.25 V
gain ranges 1, 6, 12
gain tolerance (each range) +/- 10 %
linearity (each range) +/- 0.1 % fullscale
pulse shaping (filtering) 40 nsec CR-RC
channel/channel pulse shape matching
< 1 %
technology spec. for resistors used
OK for mid and high gain ranges(low gain not a problem)
OK
OK
simulation results
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Rf
charge amp.
RG1
diff. O/P stages
Cf
VCM
CI
RI
transconductancegain stages
RI
DAC
I2C andoffset
generator
ext.trig.
MGPA main features
3 gain channels 1:6:12
differential outputs -> multi-chan. ADC
pulse shaping (external components) RfCf = 2RICI = 40 nsec.
choose RfCf for barrel/endcap
calibration facility prog. amplitude (simple DAC) needs external trigger
I2C interface to programme: output pedestal levels enable calibration feature cal DAC setting
CCAL
RG2
RG3I/P
VCM
CI
RI
RI
VCM
CI
RI
RI
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MGPA photo
die size ~ 4mm x 4mm
for packaging in 100 pin TQFPI2C
charge amp
VI stage
diff. O/P stage
offset gen.
hi
mid
lo
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RAL test board
packaged chips not yet available but RAL boardcan take bare die
dual purpose design 1) standalone–used here 2) interface to standard DAQ system
bias components fixed – no adjustment possible (without changing 0402 components)
most results here for barrelfeedback components to first stage (except whereindicated)
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Test setup for pulse shape measurements
diff. probe or single-ended buffered signal
note: very fast risetime charge injection -> pulse shape distortion on rising edge due to slew rate limitation at O/P of first stagecurrent source magnitude OK for 10 nsec exponential edge
Scope averaging -> 16 bit resolution. Multiple waveforms captured with different DC offsets to remove scope INL effects.
I/P
O/P
first stageamplifier
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Pulse shapes – low gain channel
signals up to 60 pC (feedback components for barrelapplication: 1.2k//33pF)
steps not equally spaced (log attenuator)
2 active probes on +ve and –ve outputs (before anybuffering)
linear range +/- 0.45 V around Vcm (1.25 V nom.)
note: Vcm defined by external pot’l divider (5% resistors)so not exactly 1.25 V
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Pulse shapes – all 3 gain ranges
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Differential pulse shape – low gain channel
differential probe on chip outputs (before buffering)
60 pC fullscale signal as before
differential swing +/- 0.45 V around Vcm corresponds to ~1.8 Volt linear range
pedestal subtracted
no “obvious” pulse shape distortion due to higher gainchannels saturating
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Differential pulse shapes – all 3 gain channels compared – gain ratios 1 : 5.6 : 11.3 (cf 1 : 6 : 12)
no obvious interchanneldistortion effects
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Linearity and pulse shape matching – high gain channel
fullscale signal 5.4 pC
pulse shape matching in spec., linearity outside by factor ~2
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Linearity and pulse shape matching – mid gain channel
smallest signals show slower risetime – needs further investigation
fullscale signal 10.8 pC
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Linearity and pulse shape matching – low gain channel
similar (but worse) effect as for mid-gain channel
fullscale signal 61 pC
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Pulse shape matching between gain channels
Pulse shape matching definition:
Pulse Shape Matching Factor PSMF=V(pk-25ns)/V(pk)
Pulse shape matching = [(PSMF-Ave.PSMF)/Ave.PSMF] X 100
Ave.PSMF = average for all signal sizes and gain ranges
systematic discrepancies between channels can be due to mismatch in diff. O/P termination components or (more likely here) difference in stray capacitance from PCB layout
spec.
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1st stage of buffering
differential O/P termination components(1% tolerance)
mismatch of stray O/P capacitancelikely due to signal routing on test card
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effect of input capacitance on pulse shape
pulse peak shifts by only ~ 3 nsec. => robust to variations in stray capacitance
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Barrel (33 pF // 1.2k) Endcap (8.2 pF // 4k7)
Cstray(~20 pF)
Cstray+ 180 pF
simulation200 pF
Cstray(~20 pF)
Cstray+ 56 pF
simulation50 pF
high 7,000 7,850 6,200 2,900 3,050 2,700
mid 8,250 9,100 8,200 3,300 3,450 3,073
low ~ 28,000 ~ 28,000 35,400 ~ 8,500 ~ 8,500 9,800
Noise measurements
use wide bandwidth true rms meter (single ended I/P)
=> need diff. to singled ended buffer circuitry
=> extra noise contribution to subtract
will also add extra noise filtering
weak dependence on input capacitance as expected
estimated errors: ~ 10% high and mid-gain ranges, ~ 20% low gain range (buffer circuitry dominates here)
endcap results NEW
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10 keV X-rays (spectrum peak) , dosimetry accurate to ~ 10%, doserate ~ 1 Mrad/hour, no anneal as yet
~ ½ fullscale signal injected for each gain channel
~ 3% reduction in gain after 5 Mrads
low mid high
pre-rad5 Mrads
Radiation results: pulse shape
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Radiation results: noise
Cstray+ 180 pF
Cstray+ 180pF+5 Mrads
simulation(200 pF)
high 7,850 7,250 6,200
mid 9,100 8,700 8,200
low ~28,000 ~32,000 35,400
no significant change (within errors) after irradiation
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Radiation results: linearity & pulse shape matching
high gain channel shown here linearity degraded slightly at extreme edge of range
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I2C offset setting 0
I2C offset setting 105
linearrange
I2C pedestal offset adjustment
high gain channel shown here(other channels similar)
offset setting 0 -> 105 in steps of 5 (decimal)
~ optimum baseline setting herecorresponds to I2C setting ~70
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Calibration circuit functionality (1)
10pF
1nF8 – bitDAC value0 – 2.5 V
MGPA I/P
10k
Rtc
on-chipexternal
derived fromexternal pulse
high
mid low
distortion on risingedge for low gainchannel – somehowrelated to external 1 nF cap.
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Calibration circuit functionality (2)
10pF
1nF8 – bitDAC value0 – 2.5 V
MGPA I/P
10k
Rtc
on-chipexternal
with 1 nF without 1 nF
calibration pulse shapes with/withoutexternal 1 nF show improvement ifremoved
effect needs further investigation
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main concern so far:
high frequency instability (~ 250 MHz) can be introduced on first stage O/P when probing
not clear whether problem on chip (no hint during simulation)
or could be test board related decoupling components around first stage not as close in as would like
VDDP, VS in particular
test board for packaged chips should help withdiagnosis decoupling closer in (may be cure?) bias currents easy to vary (should give clues)
new version of this board also in pipeline will also take test socket
9th July, 2003 CMS Ecal MGPA test results 25
Power consumption
Current measured in 2.5 V rail supplying test board -> ~ 245 mA
-> chip current + Vcm divider (4mA) + power LED (3mA)
chip current = 238 mA
measuring bias currents and multiplying by mirroring ratios -> 235 mA
may change if further testing indicates changing bias conditions -> performance improvements worth having
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Summary
all results so far for one unpackaged chip, barrel feedback components to first stage
gains close to specification (1 : 5.6 : 11.3)
pulse shapes goodlinearity ~ +/- 0.2% (~ 2 x spec.)pulse shape matching within spec. apart from lowest end of mid and low gain rangesno obvious distortion introduced on lower gain channels by higher gain channels saturating => good chip layout
noise close to simulation values (< 10,000 (3,500) e for mid and high gain ranges for barrel (endcap))
I2C features (channel offsets, calibration) fully functioning
5 Mrad radiation results – small effects only
for more detailed studies need packaged chips
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externalcomponentsdefine CRand CSA gain
externalcomponentsdefine RC
V/I gainresistors
offset &CAL pulsegeneration
I2Cinterface
offsetadjust
MGPA – architecture overview
diff. O/P
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