lampoly etch profiles courtesy of rishi kant (coral name: rik) performed: 11/18/08 wafer: silicon...
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Lampoly etch profiles
Courtesy of Rishi Kant (Coral name: rik)
Performed: 11/18/08
Wafer: Silicon substrate patterned with a thermal oxide hard mask (6000 angstroms thick).
Etch: Standard Recipe 1, with 300 seconds in the Main Etch.
Thermal Oxide Etch Rate: 240 A/min, excellent uniformity (50 A total thickness variation across the wafer)
Single Crystal Silicon Etch Rate: 2900 – 3400 A/min, depending on feature size (loading effect.)
Observations: Isolated structures show very good sidewall profiles. Etching holes yields sloped and W-shaped profiles depending on the size of the holes (this is historically normal.)
Isolated structures
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