is42s16400integrated silicon solution, inc. — 3 rev. d 01/30/08 is42s16400 pin functions symbol...
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Integrated Silicon Solution, Inc. — www.issi.com 1Rev. D01/3008
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
IS42S16400
FEATURES• Clock frequency: 166, 143 MHz
• Fullysynchronous;allsignalsreferencedtoapositive clock edge
• Internalbankforhidingrowaccess/precharge
• Single3.3Vpowersupply
• LVTTLinterface
• Programmableburstlength – (1, 2, 4, 8, full page)
• Programmableburstsequence: Sequential/Interleave
• Selfrefreshmodes
• 4096refreshcyclesevery64ms
• Randomcolumnaddresseveryclockcycle
• ProgrammableCAS latency (2, 3 clocks)
• Burstread/writeandburstread/singlewrite operations capability
• Burstterminationbyburststopandprechargecommand
• BytecontrolledbyLDQMandUDQM
• Package:400-mil54-pinTSOPII
• Lead-freepackageisavailable
• AvailableinIndustrialTemperature
• PowerDownandDeepPowerDownMode
• PartialArraySelfRefresh
• TemperatureCompensatedSelfRefresh
• OutputDriverStrengthSelection(Pleasecon-tactProductManagerformobilefunctiondetail)
OVERVIEWISSI's64MbSynchronousDRAMIS42S16400isorganizedas 1,048,576 bits x 16-bit x 4-bank for improved performance. ThesynchronousDRAMsachievehigh-speeddatatransferusing pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM JANUARY 2008
PIN CONFIGURATIONS54-Pin TSOP (Type II)
VDD
DQ0
VDDQ
DQ1
DQ2
GNDQ
DQ3
DQ4
VDDQ
DQ5
DQ6
GNDQ
DQ7
VDD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10
A0
A1
A2
A3
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
GND
DQ15
GNDQ
DQ14
DQ13
VDDQ
DQ12
DQ11
GNDQ
DQ10
DQ9
VDDQ
DQ8
GND
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
GND
PIN DESCRIPTIONSA0-A11 Address Input
BA0,BA1 BankSelectAddress
DQ0toDQ15 DataI/O
CLK SystemClockInput
CKE ClockEnable
CS Chip Select
RAS RowAddressStrobeCommand
CAS Column Address Strobe Command
WE WriteEnable
LDQM LowerBye,Input/OutputMask
UDQM UpperBye,Input/OutputMask
VDD Power
GND Ground
VDDq PowerSupplyforDQPin
GNDq GroundforDQPin
NC No Connection
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GENERAL DESCRIPTIONThe 64Mb SDRAM is a high speed CMOS, dynamicrandom-access memory designed to operate in 3.3Vmemory systems containing 67,108,864 bits. Internally configured as a quad-bank DRAM with a synchronousinterface.Each16,777,216-bitbankisorganizedas4,096rows by 256 columns by 16 bits.
The64MbSDRAMincludesanAUTOREFRESHMODE,and a power-saving, power-down mode. All signals are registeredonthepositiveedgeoftheclocksignal,CLK.AllinputsandoutputsareLVTTLcompatible.
The64MbSDRAMhastheabilitytosynchronouslyburstdata at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time and the capability to randomly change column addresses on each clock cycle during burst access.
A self-timed row precharge initiated at the end of the burst sequenceisavailablewiththeAUTOPRECHARGEfunctionenabled. Precharge one bank while accessing one of the
other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting at a selected location and continuing for a programmed number of locations in a programmed sequence. Theregistration of an ACTIVE command begins accesses,followedbyaREADorWRITEcommand.TheACTIVEcommand in conjunction with address bits registered are usedtoselect thebankandrowtobeaccessed(BA0,BA1selectthebank;A0-A11selecttherow).TheREADor WRITE commands in conjunction with address bitsregistered are used to select the starting column location for the burst access.
ProgrammableREADorWRITEburstlengthsconsistof1, 2, 4 and 8 locations, or full page, with a burst terminate option.
CLKCKECSRASCASWEA10
A9A8A7A6A5A4A3A2A1A0
BA0BA1
A11
COMMANDDECODER
&CLOCK
GENERATOR MODEREGISTER
REFRESHCONTROLLER
REFRESHCOUNTER
SELF
REFRESH
CONTROLLER
ROWADDRESS
LATCH MU
LTIP
LEX
ER
COLUMNADDRESS LATCH
BURST COUNTER
COLUMNADDRESS BUFFER
COLUMN DECODER
DATA INBUFFER
DATA OUTBUFFER
DQM
DQ 0-15
VDD/VDDQ
GND/GNDQ
12
12
8
12
12
8
16
16 16
16
256K(x 16)
4096
4096
4096
RO
W D
EC
OD
ER 4096
MEMORY CELLARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROWADDRESSBUFFER
FUNCTIONAL BLOCK DIAGRAM
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PIN FUNCTIONS Symbol TSOP Pin No. Type Function (In Detail)
A0-A11 23to26 InputPin AddressInputs:A0-A11aresampledduringtheACTIVE
29to34 command(row-addressA0-A11)andREAD/WRITEcommand(A0-A7
22, 35 with A10 defining auto precharge) to select one location out of the memory array intherespectivebank.A10issampledduringaPRECHARGEcommandtodeter-mine if all banks are to be precharged (A10 HIGH) or bank selected by BA0,BA1(LOW).Theaddressinputsalsoprovidetheop-codeduringaLOADMODEREGISTERcommand.
BA0,BA1 20,21 InputPin BankSelectAddress:BA0andBA1defineswhichbanktheACTIVE,READ,WRITEorPRECHARGEcommandisbeingapplied.
CAS 17 InputPin CAS, in conjunction with the RAS and WE, forms the device command. See the "CommandTruthTable"fordetailsondevicecommands.
CKE 37 InputPin TheCKEinputdetermineswhethertheCLKinputisenabled.ThenextrisingedgeoftheCLKsignalwillbevalidwhenisCKEHIGHandinvalidwhenLOW.WhenCKEisLOW,thedevicewillbeineitherpower-downmode,clocksuspendmode,orselfrefresh mode. CKEisan asynchronous input.
CLK 38 InputPin CLKisthemasterclockinputforthisdevice.ExceptforCKE,allinputstothisdeviceare acquired in synchronization with the rising edge of this pin.
CS 19 InputPin TheCS input determines whether command input is enabled within the device. Command input is enabled when CSisLOW,anddisabledwithCSisHIGH.Thedevice remains in the previous state when CS is HIGH.
DQ0to 2,4,5,7,8,10, DQPin DQ0toDQ15areI/Opins.I/Othroughthesepinscanbecontrolledinbyteunits
DQ15 11,13, 42, 44, 45, usingtheLDQMandUDQMpins.
47, 48, 50, 51, 53
LDQM, 15,39 InputPin LDQMandUDQMcontrolthelowerandupperbytesoftheI/Obuffers.Inread
UDQM mode,LDQMandUDQMcontroltheoutputbuffer.WhenLDQMorUDQMisLOW,thecorrespondingbufferbyteisenabled,andwhenHIGH,disabled.TheoutputsgototheHIGHimpedancestatewhenLDQM/UDQMisHIGH.Thisfunctioncor-responds to OEinconventionalDRAMs.Inwritemode,LDQMandUDQMcontroltheinputbuffer.WhenLDQMorUDQMisLOW,thecorrespondingbufferbyteisen-abled,anddatacanbewrittentothedevice.WhenLDQMorUDQMisHIGH,inputdata is masked and cannot be written to the device.
RAS 18 InputPin RAS, in conjunction with CAS and WE, forms the device command. See the "Com-mandTruthTable"itemfordetailsondevicecommands.
WE 16 InputPin WE, in conjunction with RAS and CAS, forms the device command. See the "Com-mandTruthTable"itemfordetailsondevicecommands.
VDDq 3,9,43,49 PowerSupplyPin VDDq is the output buffer power supply.
VDD 1,14,27 PowerSupplyPin VDD is the device internal power supply.
GNDq 6,12,46,52 PowerSupplyPin GNDq is the output buffer ground.
GND 28,41,54 PowerSupplyPin GND is the device internal ground.
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FUNCTION (InDetail)A0-A11areaddressinputssampledduringtheACTIVE(row-address A0-A11)andREAD/WRITEcommand(A0-A7 withA10definingautoPRECHARGE). A10 is sampled during aPRECHARGEcommandtodetermineifallbanksaretobePRECHARGED(A10 HIGH)orbankselectedbyBA0,BA1(LOW).Theaddressinputsalsoprovidetheop-codeduringaLOADMODEREGISTERcommand.
BankSelectAddress(BA0andBA1) defines which bank theACTIVE,READ,WRITEorPRECHARGEcommandis being applied.
CAS, in conjunction with the RAS and WE, forms the device command.Seethe“CommandTruthTable”fordetailsondevice commands.
TheCKEinputdetermineswhethertheCLKinputisen-abled.ThenextrisingedgeoftheCLKsignalwillbevalidwhenisCKEHIGHandinvalidwhenLOW.WhenCKEisLOW,thedevicewillbeineitherpower-downmode,CLOCKSUSPENDmode,orSELF-REFRESHmode.CKEisanasynchronous input.
CLKisthemasterclockinputforthisdevice.ExceptforCKE,allinputstothisdeviceareacquiredinsynchroniza-tion with the rising edge of this pin.
TheCS input determines whether command input is en-abled within the device. Command input is enabled when CS isLOW,anddisabledwithCS isHIGH.Thedeviceremains in the previous state when CS isHIGH.DQ0toDQ15areDQpins.DQthroughthesepinscanbecontrolledinbyteunitsusingtheLDQMandUDQMpins.
LDQMandUDQMcontrolthelowerandupperbytesoftheDQbuffers.Inreadmode,LDQMandUDQMcontrolthe output buffer.When LDQM or UDQM is LOW, thecorresponding buffer byte is enabled, and when HIGH, disabled.TheoutputsgototheHIGHImpedanceStatewhenLDQM/UDQMisHIGH.Thisfunctioncorrespondsto OE inconventionalDRAMs.Inwritemode,LDQMandUDQMcontroltheinputbuffer.WhenLDQMorUDQMisLOW,thecorrespondingbufferbyteisenabled,anddatacanbewritten to thedevice.WhenLDQMorUDQMisHIGH, input data is masked and cannot be written to the device.
RAS, in conjunction with CAS and WE , forms the device command.Seethe“CommandTruthTable”itemfordetailson device commands.
WE , in conjunction with RAS and CAS , forms the device command.Seethe“CommandTruthTable”itemfordetailson device commands.
VDDq is the output buffer power supply.
VDD is the device internal power supply.
GNDq is the output buffer ground.
GNDisthedeviceinternalground.
READTheREADcommandselectsthebankfromBA0,BA1inputsand starts a burst read access to an active row. Inputs A0-A7 provides the starting column location. When A10 is HIGH,thiscommandfunctionsasanAUTOPRECHARGEcommand. When the auto precharge is selected, the row beingaccessedwillbeprechargedattheendoftheREADburst.TherowwillremainopenforsubsequentaccesseswhenAUTOPRECHARGE isnot selected. DQ’s readdataissubjecttothelogiclevelontheDQMinputstwoclocksearlier.WhenagivenDQMsignalwasregisteredHIGH,thecorrespondingDQ’swillbeHigh-Ztwoclockslater.DQ’swillprovidevaliddatawhentheDQMsignalwasregisteredLOW.
WRITEA burst write access to an active row is initiated with the WRITE command. BA0, BA1 inputs selects the bank,and the starting column location is provided by inputs A0-A7.Whether or notAUTO-PRECHARGE is used isdetermined by A10.
TherowbeingaccessedwillbeprechargedattheendoftheWRITEburst, ifAUTOPRECHARGE isselected. IfAUTOPRECHARGEisnotselected,therowwillremainopen for subsequent accesses.
A memory array is written with corresponding input data onDQ’sandDQMinputlogiclevelappearingatthesametime.DatawillbewrittentomemorywhenDQMsignalisLOW.WhenDQMisHIGH,thecorrespondingdatainputswillbeignored,andaWRITEwillnotbeexecutedtothatbyte/column location.
PRECHARGEThePRECHARGEcommand isused todeactivate theopen row in a particular bank or the open row in all banks. BA0,BA1canbeusedtoselectwhichbankisprechargedor they are treated as “Don’t Care”. A10 determinedwhether one or all banks are precharged. After execut-ing this command, the next command for the selected banks(s) is executed after passage of the period tRP, which istheperiodrequiredforbankprecharging.Onceabankhas been precharged, it is in the idle state and must be activatedpriortoanyREADorWRITEcommandsbeingissued to that bank.
AUTO PRECHARGETheAUTOPRECHARGEfunctionensuresthatthepre-charge is initiated at the earliest valid stage within a burst. Thisfunctionallowsforindividual-bankprechargewithoutrequiringanexplicitcommand.A10toenablestheAUTOPRECHARGEfunctioninconjunctionwithaspecificREADorWRITEcommand.ForeachindividualREADorWRITEcommand, auto precharge is either enabled or disabled.
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AUTOPRECHARGEdoesnotapplyexceptinfull-pageburst mode. Upon completion of the READ or WRITEburst, a precharge of the bank/row that is addressed is automatically performed.
AUTO REFRESH COMMANDThiscommandexecutestheAUTOREFRESHoperation.Therowaddressandbanktoberefreshedareautomaticallygeneratedduringthisoperation. Thestipulatedperiod(trc) is required for a single refresh operation, and no other com-mandscanbeexecutedduringthisperiod. Thiscommandisexecutedatleast4096timesevery64ms.DuringanAUTOREFRESHcommand,addressbitsare“Don’tCare”.ThiscommandcorrespondstoCBRAuto-refresh.
SELF REFRESHDuringtheSELFREFRESHoperation,therowaddresstobe refreshed, the bank, and the refresh interval are gen-eratedautomaticallyinternally.SELFREFRESHcanbeusedtoretaindataintheSDRAMwithoutexternalclocking,eveniftherestofthesystemispowereddown.TheSELFREFRESHoperationisstartedbydroppingtheCKEpinfromHIGHtoLOW.DuringtheSELFREFRESHoperationallotherinputstotheSDRAMbecome“Don’tCare”.Thedevice must remain in self refresh mode for a minimum period equal to tras or may remain in self refresh mode foranindefiniteperiodbeyondthat.TheSELF-REFRESHoperationcontinuesaslongastheCKEpinremainsLOWand there is no need for external control of any other pins. Thenextcommandcannotbeexecuteduntilthedeviceinternal recovery period (trc) has elapsed. Once CKEgoesHIGH,theNOPcommandmustbeissued(minimum of two clocks) to provide time for the completion of any internal refresh in progress. After the self-refresh, since it is impossible to determine the address of the last row to berefreshed,anAUTO-REFRESHshouldimmediatelybeperformed for all addresses.
BURST TERMINATETheBURSTTERMINATEcommand forcibly terminatesthe burst read and write operations by truncating either fixed-length or full-page bursts and the most recently registeredREADorWRITEcommandpriortotheBURSTTERMINATE.
COMMAND INHIBITCOMMANDINHIBITpreventsnewcommandsfrombeingexecuted.Operationsinprogressarenotaffected,apartfromwhethertheCLKsignalisenabled
NO OPERATION When CSislow,theNOPcommandpreventsunwantedcommands from being registered during idle or wait states.
LOAD MODE REGISTERDuringtheLOADMODEREGISTERcommandthemoderegisterisloadedfromA0-A11.Thiscommandcanonlybe issued when all banks are idle.
ACTIVE COMMANDWhen the ACTIVE COMMAND is activated, BA0, BA1inputs selects a bank to be accessed, and the address inputsonA0-A11selectstherow.UntilaPRECHARGEcommand is issued to the bank, the row remains open for accesses.
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TRUTH TABLE – COMMANDS AND DQM OPERATION(1)
FUNCTION CS RAS CAS WE DQM ADDR DQs
COMMANDINHIBIT(NOP) H X X X X X X
NOOPERATION(NOP) L H H H X X X
ACTIVE(Selectbankandactivaterow)(3) L L H H X Bank/Row X
READ(Selectbank/column,startREADburst)(4) L H L H L/H(8) Bank/Col X
WRITE(Selectbank/column,startWRITEburst)(4) L H L L L/H(8) Bank/Col Valid
BURSTTERMINATE L H H L X X Active
PRECHARGE(Deactivaterowinbankorbanks)(5) L L H L X Code X
AUTOREFRESHorSELFREFRESH(6,7) L L L H X X X (Enterselfrefreshmode)
LOADMODEREGISTER(2) L L L L X Op-Code X
WriteEnable/OutputEnable(8) — — — — L — Active
WriteInhibit/OutputHigh-Z(8) — — — — H — High-ZNOTES:1. CKEisHIGHforallcommandsexceptSELFREFRESH.2. A0-A11 define the op-code written to the mode register.3. A0-A11providerowaddress,andBA0,BA1determinewhichbankismadeactive.4. A0-A7(x16)providecolumnaddress;A10HIGHenablestheautoprechargefeature(nonpersistent),whileA10LOWdisables
autoprecharge;BA0,BA1determinewhichbankisbeingreadfromorwrittento.5. A10LOW:BA0,BA1determinethebankbeingprecharged.A10HIGH:AllbanksprechargedandBA0,BA1are“Don’tCare.”6. AUTOREFRESHifCKEisHIGH,SELFREFRESHifCKEisLOW.7. Internalrefreshcountercontrolsrowaddressing;allinputsandI/Osare“Don’tCare”exceptforCKE.8. ActivatesordeactivatestheDQsduringWRITEs(zero-clockdelay)andREADs(two-clockdelay).
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TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK n (1-6)
CURRENTSTATE COMMAND(ACTION) CS RAS CAS WE
Any COMMANDINHIBIT(NOP/Continuepreviousoperation) H X X X
NOOPERATION(NOP/Continuepreviousoperation) L H H H
Idle ACTIVE(Selectandactivaterow) L L H H
AUTOREFRESH(7) L L L H
LOADMODEREGISTER(7) L L L L
PRECHARGE(11) L L H L
RowActive READ(SelectcolumnandstartREADburst)(10) L H L H
WRITE(SelectcolumnandstartWRITEburst)(10) L H L L
PRECHARGE(Deactivaterowinbankorbanks)(8) L L H L
Read READ(SelectcolumnandstartnewREADburst)(10) L H L H
(Auto WRITE(SelectcolumnandstartWRITEburst)(10) L H L L
Precharge PRECHARGE(TruncateREADburst,startPRECHARGE)(8) L L H L
Disabled) BURSTTERMINATE(9) L H H L
Write READ(SelectcolumnandstartREADburst)(10) L H L H
(Auto WRITE(SelectcolumnandstartnewWRITEburst)(10) L H L L
Precharge PRECHARGE(TruncateWRITEburst,startPRECHARGE)(8) L L H L
Disabled) BURSTTERMINATE(9) L H H LNOTE: 1.ThistableapplieswhenCKEn-1wasHIGHandCKEnisHIGH(seeTruthTable-CKE)andaftertxsr has been met (if the
previous state was SELFREFRESH). 2.Thistableisbank-specific,exceptwherenoted;i.e.,thecurrentstateisforaspecificbankandthecommandsshownarethose
allowedtobeissuedtothatbankwheninthatstate.Exceptionsarecoveredinthenotesbelow.
TRUTH TABLE – CKE (1-4)
CURRENT STATE COMMANDn ACTIONn CKEn-1 CKEn
Power-Down X MaintainPower-Down L L
SelfRefresh X MaintainSelfRefresh L L
ClockSuspend X MaintainClockSuspend L L
Power-Down(5) COMMANDINHIBITorNOP ExitPower-Down L H
SelfRefresh(6) COMMANDINHIBITorNOP ExitSelfRefresh L H
Clock Suspend(7) X ExitClockSuspend L H
AllBanksIdle COMMANDINHIBITorNOP Power-DownEntry H L
AllBanksIdle AUTOREFRESH SelfRefreshEntry H L
ReadingorWriting VALID ClockSuspendEntry H L
See TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK n H HNOTES: 1. CKEnisthelogicstateofCKEatclockedgen;CKEn-1 wasthestateofCKEatthepreviousclockedge.2. CurrentstateisthestateoftheSDRAMimmediatelypriortoclockedgen.3. COMMANDnisthecommandregisteredatclockedgen,andACTONnisaresultofCOMMANDn.4. All states and sequences not shown are illegal or reserved.5. Exitingpower-downatclockedgen will put the device in the all banks idle state in time for clock edge n+1 (provided that tcks is
met).6. Exitingselfrefreshatclockedgen will put the device in all banks idle state once txsrismet.COMMANDINHIBITorNOP
commands should be issued on clock edges occurring during the txsrperiod.AminimumoftwoNOPcommandsmustbesentduring txsr period.
7. After exiting clock suspend at clock edge n, the device will resume operation and recognize the next command at clock edge n+1.
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3. Current state definitions: Idle:Thebankhasbeenprecharged,andtrp has been met. RowActive:Arowinthebankhasbeenactivated,andtrcD has been met. No data bursts/accesses and no register
accesses are in progress. Read:AREADbursthasbeeninitiated,withautoprechargedisabled,andhasnotyetterminatedorbeentermi-
nated. Write:AWRITEbursthasbeeninitiated,withautoprechargedisabled,andhasnotyetterminatedorbeentermi-
nated. 4.Thefollowingstatesmustnotbeinterruptedbyacommandissuedtothesamebank.COMMANDINHIBITorNOPcommands,
or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable com-mandstotheotherbankaredeterminedbyitscurrentstateandCURRENTSTATEBANKntruthtables.
Precharging:StartswithregistrationofaPRECHARGEcommandandendswhentrpismet.Oncetrp is met, the bank will be in the idle state.
RowActivating:StartswithregistrationofanACTIVEcommandandendswhentrcDismet.OncetrcD is met, the bank will be in the row active state.
Readw/Auto PrechargeEnabled:StartswithregistrationofaREADcommandwithautoprechargeenabledandendswhentrp has been
met.Oncetrp is met, the bank will be in the idle state. Write w/Auto PrechargeEnabled:StartswithregistrationofaWRITEcommandwithautoprechargeenabledandendswhentrp has been
met.Oncetrp is met, the bank will be in the idle state. 5.Thefollowingstatesmustnotbeinterruptedbyanyexecutablecommand;COMMANDINHIBITorNOPcommandsmustbe
applied on each positive clock edge during these states. Refreshing:StartswithregistrationofanAUTOREFRESHcommandandendswhentrcismet.Oncetrc is met, the
SDRAMwillbeintheallbanksidlestate. Accessing Mode Register:StartswithregistrationofaLOADMODEREGISTERcommandandendswhentmrDhasbeenmet.Once
tmrDismet,theSDRAMwillbeintheallbanksidlestate. PrechargingAll:StartswithregistrationofaPRECHARGEALLcommandandendswhentrpismet.Oncetrp is met, all
banks will be in the idle state. 6. All states and sequences not shown are illegal or reserved. 7.Notbank-specific;requiresthatallbanksareidle. 8.Mayormaynotbebank-specific;ifallbanksaretobeprecharged,allmustbeinavalidstateforprecharging. 9.Notbank-specific;BURSTTERMINATEaffectsthemostrecentREADorWRITEburst,regardlessofbank.10.READsorWRITEslistedintheCommand(Action)columnincludeREADsorWRITEswithautoprechargeenabledand
READsorWRITEswithautoprechargedisabled.11.DoesnotaffectthestateofthebankandactsasaNOPtothatbank.
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TRUTH TABLE – CURRENT STATE BANK n, COMMAND TO BANK m (1-6)
CURRENTSTATE COMMAND(ACTION) CS RAS CAS WE
Any COMMANDINHIBIT(NOP/Continuepreviousoperation) H X X X
NOOPERATION(NOP/Continuepreviousoperation) L H H H
Idle AnyCommandOtherwiseAllowedtoBankm X X X X
Row ACTIVE(Selectandactivaterow) L L H H
Activating, READ(SelectcolumnandstartREADburst)(7) L H L H
Active,or WRITE(SelectcolumnandstartWRITEburst)(7) L H L L
Precharging PRECHARGE L L H L
Read ACTIVE(Selectandactivaterow) L L H H
(Auto READ(SelectcolumnandstartnewREADburst)(7,10) L H L H
Precharge WRITE(SelectcolumnandstartWRITEburst)(7,11) L H L L
Disabled) PRECHARGE(9) L L H L
Write ACTIVE(Selectandactivaterow) L L H H
(Auto READ(SelectcolumnandstartREADburst)(7,12) L H L H
Precharge WRITE(SelectcolumnandstartnewWRITEburst)(7,13) L H L L
Disabled) PRECHARGE(9) L L H L
Read ACTIVE(Selectandactivaterow) L L H H
(WithAuto READ(SelectcolumnandstartnewREADburst)(7,8,14) L H L H
Precharge) WRITE(SelectcolumnandstartWRITEburst)(7,8,15) L H L L
PRECHARGE(9) L L H L
Write ACTIVE(Selectandactivaterow) L L H H
(WithAuto READ(SelectcolumnandstartREADburst)(7,8,16) L H L H
Precharge) WRITE(SelectcolumnandstartnewWRITEburst)(7,8,17) L H L L
PRECHARGE(9) L L H LNOTE: 1.ThistableapplieswhenCKEn-1wasHIGHandCKEnisHIGH(TruthTable-CKE)andaftertxsr has been met (if the previ-
ous state was self refresh). 2.Thistabledescribesalternatebankoperation,exceptwherenoted;i.e.,thecurrentstateisforbankn and the commands
shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable).Excep-tions are covered in the notes below.
3. Current state definitions: Idle:Thebankhasbeenprecharged,andtrp has been met. RowActive:Arowinthebankhasbeenactivated,andtrcD has been met. No data bursts/accesses and no register
accesses are in progress. Read:AREADbursthasbeeninitiated,withautoprechargedisabled,andhasnotyetterminatedorbeentermi-
nated. Write:AWRITEbursthasbeeninitiated,withautoprechargedisabled,andhasnotyetterminatedorbeentermi-
nated. Readw/Auto PrechargeEnabled:StartswithregistrationofaREADcommandwithautoprechargeenabled,andendswhentrp has been
met.Oncetrp is met, the bank will be in the idle state. Write w/Auto PrechargeEnabled:StartswithregistrationofaWRITEcommandwithautoprechargeenabled,andendswhentrp has been
met.Oncetrp is met, the bank will be in the idle state. 4.AUTOREFRESH,SELFREFRESHandLOADMODEREGISTERcommandsmayonlybeissuedwhenallbanksareidle. 5.ABURSTTERMINATEcommandcannotbeissuedtoanotherbank;itappliestothebankrepresentedbythecurrentstate
only. 6. All states and sequences not shown are illegal or reserved. 7.READsorWRITEstobankmlistedintheCommand(Action)columnincludeREADsorWRITEswithautoprechargeenabled
andREADsorWRITEswithautoprechargedisabled.
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8.CONCURRENTAUTOPRECHARGE:BanknwillinitiatetheAUTOPRECHARGEcommandwhenitsbursthasbeeninter-ruptedbybankm’sburst.
9.Burstinbankncontinuesasinitiated.10.ForaREADwithoutautoprechargeinterruptedbyaREAD(withorwithoutautoprecharge),theREADtobankmwillinterrupt
theREADonbankn,CASlatencylater(ConsecutiveREADBursts).11.ForaREADwithoutautoprechargeinterruptedbyaWRITE(withorwithoutautoprecharge),theWRITEtobankmwillinter-
rupttheREADonbanknwhenregistered(READtoWRITE).DQMshouldbeusedoneclockpriortotheWRITEcommandtoprevent bus contention.
12.ForaWRITEwithoutautoprechargeinterruptedbyaREAD(withorwithoutautoprecharge),theREADtobankmwillinterrupttheWRITEonbanknwhenregistered(WRITEtoREAD),withthedata-outappearingCASlatencylater.ThelastvalidWRITEtobanknwillbedata-inregisteredoneclockpriortotheREADtobankm.
13.ForaWRITEwithoutautoprechargeinterruptedbyaWRITE(withorwithoutautoprecharge),theWRITEtobankmwillinter-rupttheWRITEonbanknwhenregistered(WRITEtoWRITE).ThelastvalidWRITEtobanknwillbedata-inregisteredoneclockpriortotheREADtobankm.
14.ForaREADwithautoprechargeinterruptedbyaREAD(withorwithoutautoprecharge),theREADtobankmwillinterrupttheREADonbankn,CASlatencylater.ThePRECHARGEtobanknwillbeginwhentheREADtobankmisregistered(FigCAP1).
15.ForaREADwithautoprechargeinterruptedbyaWRITE(withorwithoutautoprecharge),theWRITEtobankmwillinterrupttheREADonbanknwhenregistered.DQMshouldbeusedtwoclockspriortotheWRITEcommandtopreventbuscontention.ThePRECHARGEtobanknwillbeginwhentheWRITEtobankmisregistered(FigCAP2).
16.ForaWRITEwithautoprechargeinterruptedbyaREAD(withorwithoutautoprecharge),theREADtobankmwillinterrupttheWRITEonbanknwhenregistered,withthedata-outappearingCASlatencylater.ThePRECHARGEtobanknwillbeginafter tWR is met, where twrbeginswhentheREADtobankmisregistered.ThelastvalidWRITEtobanknwillbedata-inregis-teredoneclockpriortotheREADtobankm(FigCAP3).
17.ForaWRITEwithautoprechargeinterruptedbyaWRITE(withorwithoutautoprecharge),theWRITEtobankmwillinterrupttheWRITEonbanknwhenregistered.ThePRECHARGEtobanknwillbeginaftertwrismet,wheretWRbeginswhentheWRITEtobankmisregistered.ThelastvalidWRITEtobanknwillbedataregisteredoneclockpriortotheWRITEtobankm(FigCAP4).
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Integrated Silicon Solution, Inc. — www.issi.com 11Rev. D01/30/08
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ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameters Rating Unit
VDD max MaximumSupplyVoltage –1.0to+4.6 V VDDq max MaximumSupplyVoltageforOutputBuffer –1.0to+4.6 V ViN InputVoltage –1.0toVDDq +0.5 V Vout OutputVoltage –1.0toVDDq +0.5 V PD max AllowablePowerDissipation 1 W Ics output Shorted Current 50 mA Topr operatingTemperature Com. 0to+70 °C Ind. -40to+85 °C Tstg StorageTemperature –65to+150 °C
DC RECOMMENDED OPERATING CONDITIONS(2) (AtTa=0to+70°C)
Symbol Parameter Min. Typ. Max. Unit
VDD, VDDq SupplyVoltage 3.0 3.3 3.6 V Vih InputHighVoltage(3) 2.0 — VDD +0.3 V Vil InputLowVoltage(4) -0.3 — +0.8 V
CAPACITANCE CHARACTERISTICS(1,2) (AtTa=0to+25°C,VDD=VDDq=3.3±0.3V,f=1MHz)
Symbol Parameter Typ. Max. Unit
CiN InputCapacitance:AddressandControl — 3.8 pF Cclk InputCapacitance:(CLK) — 3.5 pF CI/O DataInput/OutputCapacitance:I/O0-I/O15 — 6.5 pFNotes:1. StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sectionsofthisspecificationisnotimplied.Exposuretoabsolutemaximumratingconditionsforextendedperiodsmayaffectreliability.
2. AllvoltagesarereferencedtoGND.3.Vih(max)=VDDq+2.0Vwithapulsewidth<3ns.4.Vil(min)=GND-2.0Vwithapulsewidth<3ns.
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DC ELECTRICAL CHARACTERISTICS (RecommendedOperationConditionsunlessotherwisenoted.)
Symbol Parameter Test Condition Speed Min. Max. Unit iil InputLeakageCurrent 0V≤ViN ≤VDD, with pins other than –5 5 µA thetestedpinat0V iol OutputLeakageCurrent Outputisdisabled,0V≤ Vout ≤VDD –5 5 µA Voh OutputHighVoltageLevel iout=–2mA 2.4 — V Vol OutputLowVoltageLevel iout=+2mA — 0.4 V
icc1 OperatingCurrent(1,2) OneBankOperation,CASlatency=3Com. -6 — 95 mA BurstLength=1 Com. -7 — 85 mA trc ≥ trc (min.) Ind. -6 — 155 mA Iout = 0mA Ind. -7 — 145 icc2p PrechargeStandbyCurrent CKE≤ Vil (max) tck = 15ns Com. — — 2 mA Ind. — — 4 mA Icc2ps (InPower-DownMode) tck = ∞ Com. — — 2 mA Ind. — — 3 mA icc2N(3) PrechargeStandbyCurrent CKE≥ Vih (miN) tck = 15ns — — 20 mA Icc2Ns (InNonPower-DownMode) tck = ∞ Com. — — 15 mA Ind. — — 15 mA icc3p ActiveStandbyCurrent CKE≤ Vil (max) tck = 10ns Com. — — 7 mA Ind. — — 7 mA icc3ps (InPower-DownMode) tck = ∞ Com. — — 5 mA Ind. — — 5 mA icc3N(3) ActiveStandbyCurrent CKE≥ Vih (miN) tck = 15ns — — 30 mA Icc3Ns (InNonPower-DownMode) tck = ∞ Com. — — 25 mA Ind. — — 25 mA icc4 OperatingCurrent tck = tck (miN) CAS latency = 3 Com. -6 — 130 mA (InBurstMode)(1) Iout = 0mA Com. -7 — 100 mA BL=4;4banksactivated Ind. -6 — 140 mA Ind. -7 — 110 mA icc5 Auto-RefreshCurrent trc = trc (miN) CAS latency = 3 Com. -6 — 150 mA tclk = tclk (miN) Com. -7 — 130 mA Ind. -6 — 170 mA Ind. -7 — 150 mA icc6 Self-RefreshCurrent CKE≤0.2V — — 2 mANotes:1. Thesearethevaluesattheminimumcycletime.Sincethecurrentsaretransient,thesevaluesdecreaseasthecycletimein-
creases.Alsonotethatabypasscapacitorofatleast0.01µFshouldbeinsertedbetweenVDDandGNDforeachmemorychipto suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc1 and Icc4dependontheoutputload.ThemaximumvaluesforIcc1 and Icc4 are obtained with the output open state.3. Input signal chnage once per 30ns.
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AC ELECTRICAL CHARACTERISTICS (1,2,3)
-6 -7 Symbol Parameter Min. Max. Min. Max. Units tck3 ClockCycleTime CASLatency=3 6 — 7 — ns tck2 CASLatency=2 7.5 — 7.5 — ns
tac3 AccessTimeFromCLK(4,6) CASLatency=3 — 5 — 5.4 ns tac2 CASLatency=2 — 6 — 6 ns
tchi CLKHIGHLevelWidth 2 — 2.5 — ns
tcl CLKLOWLevelWidth 2 — 2.5 — ns
toh3 OutputDataHoldTime(6) CASLatency=3 2.5 — 2.7 — ns toh2 CAS Latency=2 2.5 — 3 — ns
tlz OutputLOWImpedanceTime 0 — 0 — ns
thz3 OutputHIGHImpedanceTime(5) CASLatency=3 — 5 — 5.4 ns thz2 CASLatency=2 — 6 — 6 ns
tDs InputDataSetupTime 1.5 — 1.5 — ns
tDh InputDataHoldTime 0.8 — 0.8 — ns
tas AddressSetupTime 1.5 — 1.5 — ns
tah AddressHoldTime 0.8 — 0.8 — ns
tcks CKESetupTime 1.5 — 1.5 — ns
tckh CKEHoldTime 0.8 — 0.8 — ns
tcka CKEtoCLKRecoveryDelayTime 1CLK+3 — 1CLK+3 — ns
tcs CommandSetupTime(CS, RAS, CAS, WE,DQM) 1.5 — 2.0 — ns
tch CommandHoldTime(CS, RAS, CAS, WE,DQM) 0.8 — 1 — ns
trc CommandPeriod(REFtoREF/ACTtoACT) 60 — 63 — ns
tras CommandPeriod(ACTtoPRE) 42 100,000 42 100,000 ns
trp CommandPeriod(PREtoACT) 18 — 20 — ns
trcD ActiveCommandToRead/WriteCommandDelayTime 18 — 20 — ns
trrD CommandPeriod(ACT[0]toACT[1]) 12 — 14 — ns
tDpl or InputDataToPrecharge CASLatency=3 2CLK — 2CLK — ns twr CommandDelaytime CAS Latency=2 2CLK — 2CLK — ns
tDal InputDataToActive/Refresh CASLatency=3 2CLK+trp — 2CLK+trp — ns CommandDelaytime(DuringAuto-Precharge) CAS Latency=2 2CLK+trp — 2CLK+trp — ns
tt TransitionTime 1 10 1 10 ns
tref RefreshCycleTime(4096) — 64 — 64 msNotes:1. Whenpowerisfirstapplied,memoryoperationshouldbestarted200µsafterVDDandVDDq reach their stipulated voltages. Also
note that the power-on sequence must be executed before starting memory operation.2. measured with tt = 1 ns.3. Thereferencelevelis1.4Vwhenmeasuringinputsignaltiming.RiseandfalltimesaremeasuredbetweenVih (min.)andVil
(max.).4. Accesstimeismeasuredat1.4Vwiththeloadshowninthefigurebelow.5. Thetimethz (max.)isdefinedasthetimerequiredfortheoutputvoltagetotransitionby±200mVfromVoh (min.)orVol (max.)
when the output is in the high impedance state.6. If clock rising time is longer than 1ns, tr/2 - 0.5ns should be added to the parameter.
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AC TEST CONDITIONS (Input/OutputReferenceLevel:1.4V)
I/O
50 Ω+1.5V
50 pF
Input Load Output Load
2.0V
1.4V
0.8V
CLK
INPUT
OUTPUT
tCHI
tCH
tACtOH
tCS
tCKtCL
2.0V
1.4V
1.4V 1.4V
0.8V
OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER -6 -7 UNITS
— ClockCycleTime 6 7 ns
— OperatingFrequency 166 143 MHz
tccD READ/WRITEcommandtoREAD/WRITEcommand 1 1 cycle
tckeD CKEtoclockdisableorpower-downentrymode 1 1 cycle
tpeD CKEtoclockenableorpower-downexitsetupmode 1 1 cycle
tDqD DQMtoinputdatadelay 0 0 cycle
tDqm DQMtodatamaskduringWRITEs 0 0 cycle
tDqz DQMtodatahigh-impedanceduringREADs 2 2 cycle
tDwD WRITEcommandtoinputdatadelay 0 0 cycle
tDal Data-intoACTIVEcommand 5 5 cycle
tDpl Data-intoPRECHARGEcommand 2 2 cycle
tbDl Lastdata-intoburstSTOPcommand 1 1 cycle
tcDl Lastdata-intonewREAD/WRITEcommand 1 1 cycle
trDl Lastdata-intoPRECHARGEcommand 2 2 cycle
tmrD LOADMODEREGISTERcommand 2 2 cycle toACTIVEorREFRESHcommand
troh Data-outtohigh-impedancefrom CL=3 3 3 cycle PRECHARGEcommand CL=2 2 2 cycle
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FUNCTIONAL DESCRIPTIONThe64MbSDRAMs(1Megx16x4banks)arequad-bankDRAMswhichoperateat3.3Vandincludeasynchronousinterface (all signals are registered on the positive edge of theclocksignal,CLK).Eachofthe16,777,216-bitbanksisorganizedas4,096rowsby256columnsby16bits.
ReadandwriteaccessestotheSDRAMareburstoriented;accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an AC-TIVEcommandwhichisthenfollowedbyaREADorWRITEcommand.TheaddressbitsregisteredcoincidentwiththeACTIVEcommandareusedtoselectthebankandrowtobe accessed (BA0andBA1selectthebank,A0-A11selecttherow).Theaddressbits(A0-A7) registered coincident with the READorWRITEcommandareusedtoselectthestartingcolumn location for the burst access.
Prior to normal operation, the SDRAM must be initial-ized.Thefollowingsectionsprovidedetailedinformationcovering device initialization, register definition, command descriptions and device operation.
InitializationSDRAMs must be powered up and initialized in a predefined manner.
The64MSDRAMisinitializedafterthepowerisappliedtoVDDandVDDq (simultaneously), and the clock is stable withDQMHighandCKEHigh.
A 100µs delay is required prior to issuing any command other than a COMMANDINHIBIT or a NOP.TheCOMMANDINHIBITorNOPmaybeappliedduringthe100µsperiodandcontinue should at least through the end of the period.
WithatleastoneCOMMANDINHIBITorNOPcommandhavingbeenapplied,aPRECHARGEcommandshouldbe applied once the 100µs delay has been satisfied. All banksmustbeprecharged.Thiswill leaveallbanksinan idle state, afterwhichatleasttwoAUTOREFRESH cycles must be performed. After the AUTOREFRESH cycles are complete, the SDRAM is then ready for mode registerprogramming.
The mode register should be loaded prior to applyingany operational command because it will power up in an unknownstate.AftertheLoadModeRegistercommand,at least twoNOPcommandsmustbeassertedprior toany command.
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REGISTER DEFINITION
Mode RegisterThemode register isused todefine thespecificmodeofoperationof theSDRAM.Thisdefinition includestheselection of a burst length, a burst type, a CAS latency, an operating mode and a write burst mode, as shown in MODEREGISTERDEFINITION.
ThemoderegisterisprogrammedviatheLOADMODEREGISTERcommandandwillretainthestoredinformationuntil it is programmed again or the device loses power.
Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4- M6 specify the CAS latency, M7 and M8 specify the operating mode,M9specifiestheWRITEburstmode,andM10andM11 are reserved for future use.
Themode registermustbe loadedwhenallbanksareidle, and the controller must wait the specified time before initiatingthesubsequentoperation.Violatingeitheroftheserequirements will result in unspecified operation.
MODE REGISTER DEFINITION
Latency Mode
M6 M5 M4 CAS Latency
0 0 0 Reserved 0 0 1 Reserved 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved
1. To ensure compatibility with future devices,should program M11, M10 = "0, 0"
Write Burst Mode
M9 Mode
0 Programmed Burst Length
1 Single Location Access
Operating Mode
M8 M7 M6-M0 Mode
0 0 Defined Standard Operation — — — All Other States Reserved
Burst Type
M3 Type
0 Sequential 1 Interleaved
Burst Length
M2 M1 M0 M3=0 M3=1
0 0 0 1 1 0 0 1 2 2 0 1 0 4 4 0 1 1 8 8 1 0 0 Reserved Reserved 1 0 1 Reserved Reserved 1 1 0 Reserved Reserved 1 1 1 Full Page Reserved
Reserved
Address Bus
Mode Register (Mx)
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
(1)
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BURST DEFINITION
Burst Starting Column Order of Accesses Within a Burst
Length Address Type = Sequential Type = Interleaved
A0
2 0 0-1 0-1
1 1-0 1-0
A1 A0
0 0 0-1-2-3 0-1-2-3
4 0 1 1-2-3-0 1-0-3-2
1 0 2-3-0-1 2-3-0-1
1 1 3-0-1-2 3-2-1-0
A2 A1 A0
0 0 0 0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
0 0 1 1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
0 1 0 2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
8 0 1 1 3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
1 0 0 4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
1 0 1 5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
1 1 0 6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
1 1 1 7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
Full n=A0-A7 Cn,Cn+1,Cn+2 NotSupported Page Cn+3,Cn+4... (y) (location 0-y) …Cn - 1, Cn…
Burst LengthReadandwriteaccessestotheSDRAMareburstoriented,with the burst length being programmable, as shown in MODEREGISTERDEFINITION.Theburstlengthdeter-mines the maximum number of column locations that can beaccessedforagivenREADorWRITEcommand.Burstlengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a full-page burst is available for the sequential type.The full-pageburstisusedinconjunctionwiththeBURSTTERMINATEcommand to generate arbitrary burst lengths.
Reservedstatesshouldnotbeused,asunknownoperationor incompatibility with future versions may result.
WhenaREADorWRITEcommandisissued,ablockofcolumns equal to the burst length is effectively selected. All accesses for that burst take place within this block, mean-
ing that the burst will wrap within the block if a boundary isreached.TheblockisuniquelyselectedbyA1-A7(x16)whentheburstlengthissettotwo;byA2-A7(x16)whentheburstlengthissettofour;andbyA3-A7(x16)whentheburstlengthissettoeight.Theremaining(leastsignificant)address bit(s) is (are) used to select the starting location withintheblock.Full-pageburstswrapwithinthepageifthe boundary is reached.
Burst TypeAccesses within a given burst may be programmed to be eithersequentialorinterleaved;thisisreferredtoastheburst type and is selected via bit M3.
Theorderingofaccesseswithinaburstisdeterminedbythe burst length, the burst type and the starting column address,asshowninBURSTDEFINITIONtable.
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DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ NOP NOP NOP
CAS Latency - 3
tAC
tOH
DOUT
T0 T1 T2 T3 T4
tLZ
CLK
COMMAND
DQ
READ NOP NOP
CAS Latency - 2
tAC
tOH
DOUT
T0 T1 T2 T3
tLZ
CAS Latency
CAS LatencyTheCAS latency is thedelay, inclockcycles,betweenthe registrationofaREADcommandandtheavailabilityofthefirstpieceofoutputdata.Thelatencycanbesettotwoorthree clocks.
IfaREADcommandisregisteredatclockedgen,andthe latency is m clocks, the data will be available by clock edge n + m.TheDQswillstartdrivingasaresultoftheclock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m.Forexample,assumingthattheclockcycle time is such that all relevant access times are met, ifaREADcommandisregisteredatT0andthelatencyisprogrammedto twoclocks, theDQswillstartdrivingafterT1andthedatawillbevalidbyT2,asshowninCASLatencydiagrams.TheAllowable Operating Frequency table indicates the operating frequencies at which each CAS latency setting can be used.
Reservedstatesshouldnotbeusedasunknownoperationor incompatibility with future versions may result.
CAS LatencyAllowable Operating Frequency (MHz)
Speed CAS Latency = 2 CAS Latency = 3
6 133 166
7 133 143
Operating ModeThenormaloperatingmodeisselectedbysettingM7andM8tozero;theothercombinationsofvaluesforM7andM8arereservedforfutureuseand/ortestmodes.TheprogrammedburstlengthappliestobothREADandWRITEbursts.
Testmodesandreservedstatesshouldnotbeusedbe-cause unknown operation or incompatibility with future versions may result.
Write Burst ModeWhenM9=0,theburstlengthprogrammedviaM0-M2appliestobothREADandWRITEbursts;whenM9=1,theprogrammedburstlengthappliestoREADbursts,butwrite accesses are single-location (nonburst) accesses.
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CLK
CKEHIGH - Z
ROW ADDRESS
BANK ADDRESS
CS
RAS
CAS
WE
A0-A11
BA0, BA1
Activating Specific Row Within Specific Bank
DON'T CARE
CLK
COMMAND ACTIVE NOP NOP
tRCD
T0 T1 T2 T3 T4
READ orWRITE
OPERATION
BANK/ROW ACTIVATIONBeforeanyREADorWRITEcommandscanbe issuedtoabankwithintheSDRAM,arowinthatbankmustbe“opened.”ThisisaccomplishedviatheACTIVEcommand,which selects both the bank and the row to be activated (see ActivatingSpecificRowWithinSpecificBank).
After opening a row (issuinganACTIVEcommand),aREADorWRITEcommandmaybeissuedtothatrow,subjecttothe trcD specification. Minimum trcD should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVEcommandonwhichaREADorWRITEcommandcanbeentered.Forexample,atrcD specification of 20ns with a 125 MHz clock (8ns period) results in 2.5 clocks, rounded to3.Thisisreflectedinthefollowingexample,whichcov-ersanycasewhere2<[trcD (MIN)/tck] ≤3.(Thesameprocedure is used to convert other specification limits from time units to clock cycles).
AsubsequentACTIVEcommandtoadifferentrowinthesame bank can only be issued after the previous active rowhasbeen“closed”(precharged).TheminimumtimeintervalbetweensuccessiveACTIVEcommands to thesame bank is defined by trc.
AsubsequentACTIVEcommandtoanotherbankcanbeissued while the first bank is being accessed, which results inareductionoftotalrow-accessoverhead.TheminimumtimeintervalbetweensuccessiveACTIVEcommandstodifferent banks is defined by trrD.
Example: Meeting tRCD (MIN) when 2 < [tRCD (min)/tCK] ≤ 3
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CLK
CKEHIGH-Z
COLUMN ADDRESS
AUTO PRECHARGE
NO PRECHARGE
CS
RAS
CAS
WE
A0-A7
A10
BA0, BA1 BANK ADDRESS
A8, A9, A11
READ COMMANDREADSREAD bursts are initiated with a READ command, asshownintheREADCOMMANDdiagram.
ThestartingcolumnandbankaddressesareprovidedwiththeREADcommand,andautoprechargeiseitherenabledordisabled for that burst access. If auto precharge is enabled, the row being accessed is precharged at the completion of theburst.ForthegenericREADcommandsusedinthefol-lowing illustrations, auto precharge is disabled.
DuringREADbursts,thevaliddata-outelementfromthestarting column address will be available following the CASlatencyaftertheREADcommand.Eachsubsequentdata-out element will be valid by the next positive clock edge.TheCASLatencydiagramshowsgeneral timing for each possible CAS latency setting.
Uponcompletionofaburst,assumingnoothercommandshavebeeninitiated,theDQswillgoHigh-Z.Afull-pageburstwill continue until terminated. (At the end of the page, it will wrap to column 0 and continue.)
DatafromanyREADburstmaybetruncatedwithasub-sequentREADcommand,anddatafromafixed-lengthREADburstmaybeimmediatelyfollowedbydatafromaREADcommand.Ineithercase,acontinuousflowofdatacanbemaintained.Thefirstdataelementfromthenewburst follows either the last element of a completed burst or the last desired data element of a longer burst which is being truncated.
ThenewREADcommandshouldbeissuedx cycles before the clock edge at which the last desired data element is valid, where x equalstheCASlatencyminusone.ThisisshowninConsecutiveREADBurstsforCASlatenciesoftwoandthree;dataelementn +3iseitherthelastofaburstoffourorthelastdesiredofalongerburst.The64MbSDRAMusesapipelinedarchitectureandthereforedoesnot require the 2n rule associated with a prefetch architec-ture.AREADcommandcanbeinitiatedonanyclockcyclefollowingapreviousREADcommand.Full-speedrandomread accesses can be performed to the same bank, as showninRandomREADAccesses,oreachsubsequentREADmaybeperformedtoadifferentbank.
DatafromanyREADburstmaybetruncatedwithasub-sequent WRITE command, and data from a fixed-lengthREADburstmaybeimmediatelyfollowedbydatafromaWRITEcommand(subjecttobusturnaroundlimitations).TheWRITEburstmaybeinitiatedontheclockedgeim-mediately following the last (or last desired) data element fromtheREADburst,providedthatI/Ocontentioncanbeavoided. In a given system design, there may be a pos-sibilitythatthedevicedrivingtheinputdatawillgoLow-ZbeforetheSDRAMDQsgoHigh-Z.Inthiscase,atleasta single-cycle delay should occur between the last read dataandtheWRITEcommand.
TheDQMinputisusedtoavoidI/Ocontention,asshowninFiguresRW1andRW2.TheDQMsignalmustbeas-serted (HIGH)at least threeclocksprior to theWRITEcommand(DQMlatencyistwoclocksforoutputbuffers)tosuppressdata-out fromtheREAD.Once theWRITEcommandisregistered,theDQswillgoHigh-Z(orremainHigh-Z),regardlessofthestateoftheDQMsignal,providedtheDQMwasactiveontheclockjustpriortotheWRITEcommandthattruncatedtheREADcommand.Ifnot,thesecondWRITEwillbeaninvalidWRITE.Forexample,ifDQMwasLOWduringT4inFigureRW2,thentheWRITEsatT5andT7wouldbevalid,whiletheWRITEatT6wouldbe invalid.
TheDQMsignalmustbede-assertedpriortotheWRITEcommand(DQMlatencyiszeroclocksforinputbuffers)to ensure that the written data is not masked.
Afixed-lengthREADburstmaybefollowedby,ortruncatedwith, a PRECHARGE command to the same bank (provided that auto precharge was not activated), and a full-page burst maybetruncatedwithaPRECHARGEcommandtothesamebank.ThePRECHARGEcommandshouldbeissuedx cycles before the clock edge at which the last desired data element is valid, where x equals the CAS latency minusone.ThisisshownintheREADtoPRECHARGE
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Integrated Silicon Solution, Inc. — www.issi.com 21Rev. D01/30/08
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DON'T CARE
UNDEFINED
CLK
COMMAND
DQ
READ NOP NOP NOP
CAS Latency - 3
tAC
tOH
DOUT
T0 T1 T2 T3 T4
tLZ
CLK
COMMAND
DQ
READ NOP NOP
CAS Latency - 2
tAC
tOH
DOUT
T0 T1 T2 T3
tLZ
CAS Latency
diagramforeachpossibleCASlatency;dataelementn +3 is either the last of a burst of four or the last desired of alongerburst.FollowingthePRECHARGEcommand,asubsequent command to the same bank cannot be issued until trp is met. Note that part of the row precharge time is hidden during the access of the last data element(s).
In the case of a fixed-length burst being executed to completion, a PRECHARGE command issued at theoptimum time (as described above) provides the same operation that would result from the same fixed-length burstwithautoprecharge.ThedisadvantageofthePRE-CHARGEcommandisthatitrequiresthatthecommandand address buses be available at the appropriate time to issuethecommand;theadvantageofthePRECHARGEcommand is that it can be used to truncate fixed-length or full-page bursts.
Full-pageREADburstscanbetruncatedwiththeBURSTTERMINATE command, and fixed-length READ burstsmaybetruncatedwithaBURSTTERMINATEcommand,providedthatautoprechargewasnotactivated.TheBURSTTERMINATEcommandshouldbeissuedx cycles before the clock edge at which the last desired data element is valid, where x equalstheCASlatencyminusone.ThisisshownintheREADBurstTerminationdiagramforeachpossibleCASlatency;dataelementn +3isthelastdesireddata element of a longer burst.
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DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ NOP NOP NOP READ NOP NOP
DOUT n DOUT n+1 DOUT n+2 DOUT n+3 DOUT b
BANK,COL n
BANK,COL b
CAS Latency - 2
x = 1 cycle
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
READ NOP NOP NOP READ NOP NOP NOP
DOUT n DOUT n+1 DOUT n+2 DOUT n+3 DOUT b
BANK,COL n
BANK,COL b
CAS Latency - 3
x = 2 cycles
Consecutive READ Bursts
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DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5
READ READ READ READ NOP NOP
DOUT n DOUT b DOUT m DOUT x
BANK,COL n
BANK,COL b
CAS Latency - 2
BANK,COL m
BANK,COL x
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ READ READ READ NOP NOP NOP
DOUT n DOUT b DOUT m DOUT x
BANK,COL n
BANK,COL b
CAS Latency - 3
BANK,COL m
BANK,COL x
Random READ Accesses
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DON'T CARE
CLK
DQM
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5
READ NOP NOP NOP NOP WRITE
BANK,COL n
BANK,COL b
DOUT n DIN b
tDS
tHZ
CAS Latency - 3
RW1 - READ to WRITE
RW2 - READ to WRITE
DON'T CARE
CLK
DQM
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ NOP NOP NOP NOP NOP WRITE
BANK,COL n
DIN b
tDS
tHZ
BANK,COL b
CAS Latency - 2
DOUT n DOUT n+1 DOUT n+2
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DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
READ NOP NOP NOP NOP NOP ACTIVE
DOUT n DOUT n+1 DOUT n+2 DOUT n+3
BANK a,COL n
BANK a,ROW
BANK(a or all)
CAS Latency - 2
x = 1 cycle
tRP
PRECHARGE
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
READ NOP NOP NOP NOP NOP ACTIVE
DOUT n DOUT n+1 DOUT n+2 DOUT n+3
BANK,COL n
BANK,COL b
CAS Latency - 3
x = 2 cycles
tRP
BANK a,ROW
PRECHARGE
READ to PRECHARGE
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DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ NOP NOP NOP NOP NOP
DOUT n DOUT n+1 DOUT n+2 DOUT n+3
BANK a,COL n
CAS Latency - 2
x = 1 cycle
BURSTTERMINATE
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
READ NOP NOP NOP NOP NOP NOP
DOUT n DOUT n+1 DOUT n+2 DOUT n+3
BANK,COL n
CAS Latency - 3
x = 2 cycles
BURSTTERMINATE
READ Burst Termination
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CLK
CKEHIGH - Z
COLUMN ADDRESS
AUTO PRECHARGE
BANK ADDRESS
CS
RAS
CAS
WE
A0-A7
A10
BA0, BA1
NO PRECHARGE
A8, A9, A11
WRITE Command
ThestartingcolumnandbankaddressesareprovidedwiththeWRITEcommand,andautoprechargeiseitherenabledor disabled for that access. If auto precharge is enabled, the row being accessed is precharged at the completion of theburst.ForthegenericWRITEcommandsusedinthefollowing illustrations, auto precharge is disabled.
DuringWRITEbursts,thefirstvaliddata-in element will be registered coincident with the WRITEcommand. Subsequent data elements will be registered on each successive posi-tiveclockedge.Uponcompletionofafixed-lengthburst,assuming no other commands have been initiated, the DQswillremainHigh-Zandanyadditionalinputdatawillbeignored(seeWRITEBurst).Afull-pageburstwillcon-tinue until terminated. (At the end of the page, it will wrap to column 0 and continue.)
DataforanyWRITEburstmaybetruncatedwithasubse-quentWRITEcommand,anddataforafixed-lengthWRITEburstmaybe immediately followedbydata foraWRITEcommand.ThenewWRITEcommandcanbe issuedonanyclockfollowingthepreviousWRITEcommand,andthedata provided coincident with the new command applies to the new command.
AnexampleisshowninWRITEtoWRITEdiagram.Datan +1iseitherthelastofaburstoftwoorthelastdesiredof a longer burst.The 64Mb SDRAM uses a pipelinedarchitecture and therefore does not require the 2n rule as-sociatedwithaprefetcharchitecture.AWRITEcommandcan be initiated on any clock cycle following a previous WRITEcommand.Full-speedrandomwriteaccesseswithina page can be performed to the same bank, as shown in RandomWRITECycles,oreachsubsequentWRITEmaybe performed to a different bank.
DataforanyWRITEburstmaybetruncatedwithasubse-quentREADcommand,anddataforafixed-lengthWRITEburstmaybeimmediatelyfollowedbyasubsequentREADcommand.OncetheREADcommandisregistered,thedatainputswillbeignored,andWRITEswillnotbeex-ecuted.AnexampleisshowninWRITEtoREAD.Datan +1iseitherthelastofaburstoftwoorthelastdesiredof a longer burst.
Data for a fixed-length WRITE burst may be followedby,or truncatedwith,aPRECHARGEcommandto thesame bank (provided that auto precharge was not acti-vated), anda full-pageWRITEburstmaybe truncatedwithaPRECHARGEcommand to thesamebank.ThePRECHARGEcommandshouldbeissuedtwr after the clock edge at which the last desired input data element isregistered.Theautoprechargemoderequiresatwr of at least one clock plus time, regardless of frequency. In addition,whentruncatingaWRITEburst,theDQMsignalmust be used to mask input data for the clock edge prior to,andtheclockedgecoincidentwith,thePRECHARGEcommand.AnexampleisshownintheWRITEtoPRE-CHARGEdiagram.Datan+1iseitherthelastofaburstoftwoorthelastdesiredofalongerburst.FollowingthePRECHARGEcommand,asubsequentcommandtothesame bank cannot be issued until trp is met.
In the case of a fixed-length burst being executed to comple-tion,aPRECHARGEcommand issuedat theoptimumtime (as described above) provides the same operation that would result from the same fixed-length burst with auto precharge.ThedisadvantageofthePRECHARGE command is that it requires that the command and address buses be availableattheappropriatetimetoissuethecommand;theadvantageofthePRECHARGEcommandisthatitcanbeused to truncate fixed-length or full-page bursts.
Fixed-lengthorfull-pageWRITEburstscanbetruncatedwiththeBURSTTERMINATEcommand.Whentruncat-ingaWRITEburst,theinputdataappliedcoincidentwiththeBURSTTERMINATEcommandwillbeignored.Thelastdatawritten(providedthatDQMisLOWatthattime)will be the input data applied one clock previous to the BURSTTERMINATEcommand.ThisisshowninWRITEBurstTermination,wheredatan is the last desired data element of a longer burst.
WRITEsWRITEburstsareinitiatedwithaWRITEcommand,asshowninWRITECommanddiagram.
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CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3
WRITE NOP NOP NOP
DIN n DIN n+1
BANK,COL n
DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2
WRITE NOP WRITE
DIN n DIN n+1 DIN b
BANK,COL n
BANK,COL b
DON'T CARE
WRITE Burst
WRITE to WRITE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3
WRITE WRITE WRITE WRITE
DIN n DIN b DIN m DIN x
BANK,COL n
BANK,COL b
BANK,COL m
BANK,COL x
Random WRITE Cycles
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Integrated Silicon Solution, Inc. — www.issi.com 29Rev. D01/30/08
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DON'T CARE
CLK
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5
WRITE NOP READ NOP NOP NOP
DIN n DIN n+1 DOUT b DOUT b+1
BANK,COL n
BANK,COL b
CAS Latency - 2
WRITE to READ
WP1 - WRITE to PRECHARGE
DON'T CARE
CLK
DQM
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
WRITE NOP NOP ACTIVE NOP NOP
BANK a,COL n
BANK a,ROW
BANK(a or all)
tWR
tRP
PRECHARGE
DIN n DIN n+1
CAS Latency - 2
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CLK
COMMAND
ADDRESS
DQ
T0 T1 T2
WRITE
DIN n (DATA)
BANK,COL n
DON'T CARE
(ADDRESS)
BURSTTERMINATE
NEXTCOMMAND
WRITE Burst Termination
DON'T CARE
CLK
DQM
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
WRITE NOP NOP NOP ACTIVE NOP
BANK a,COL n
BANK a,ROW
BANK(a or all)
tWR
tRP
PRECHARGE
DIN n DIN n+1
CAS Latency - 3
WP2 - WRITE to PRECHARGE
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CLK
CKEHIGH - Z
ALL BANKS
BANK SELECT
BANK ADDRESS
CS
RAS
CAS
WE
A0-A9, A11
A10
BA0, BA1
DON'T CARE
CLK
CKE
COMMAND NOP NOP ACTIVE
≥ tCKStCKS
All banks idle
Enter power-down mode Exit power-down mode
tRCDtRAStRC
Input buffers gated off
PRECHARGE Command
POWER-DOWN
POWER-DOWNPower-downoccursifCKEisregisteredLOWcoincidentwithaNOPorCOMMANDINHIBITwhennoaccessesare in progress. If power-down occurs when all banks are idle,thismodeisreferredtoasprechargepower-down;if power-down occurs when there is a row active in either bank, this mode is referred to as active power-down. Entering power-down deactivates the input and outputbuffers,excludingCKE,formaximumpowersavingswhileinstandby.Thedevicemaynotremaininthepower-downstate longer than the refresh period (64ms) since no refresh operations are performed in this mode.
Thepower-downstateisexitedbyregisteringaNOPorCOMMANDINHIBITandCKEHIGHatthedesiredclockedge (meeting tcks). See figure below.
PRECHARGEThePRECHARGEcommand(seefigure)isusedtodeac-tivate the open row in a particular bank or the open row in allbanks.Thebank(s)willbeavailableforasubsequentrowaccess some specified time (trp)afterthePRECHARGEcommand is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only onebankistobeprecharged,inputsBA0,BA1selectthebank.Whenallbanksaretobeprecharged,inputsBA0,BA1aretreatedas“Don’tCare.”Onceabankhasbeenprecharged, it is in the idle state and must be activated priortoanyREADorWRITEcommandsbeingissuedtothat bank.
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DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5
NOP WRITE NOP NOP
BANK a,COL n
DIN n DIN n+1 DIN n+2
INTERNALCLOCK
DON'T CARE
CLK
CKE
COMMAND
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6
READ NOP NOP NOP NOP NOP
BANK a,COL n
DOUT n DOUT n+1 DOUT n+2 DOUT n+3
INTERNALCLOCK
CLOCK SUSPENDClock suspend mode occurs when a column access/burst is inprogressandCKEisregisteredLOW.In theclocksuspendmode,theinternalclockisdeactivated,“freezing”the synchronous logic.
ForeachpositiveclockedgeonwhichCKEissampledLOW,thenextinternalpositiveclockedgeissuspended.Any command or data present on the input pins at the time
ofasuspendedinternalclockedgeisignored;anydatapresentontheDQpinsremainsdriven;andburstcountersare not incremented, as long as the clock is suspended. (See following examples.)
ClocksuspendmodeisexitedbyregisteringCKEHIGH;the internal clock and related operation will resume on the subsequent positive clock edge.
Clock Suspend During WRITE Burst
Clock Suspend During READ Burst
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DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
DOUT a DOUT a+1 DOUT b DOUT b+1
BANK n,COL a
BANK m,COL b
CAS Latency - 3 (BANK n)
CAS Latency - 3 (BANK m)
tRP - BANK n tRP - BANK m
READ - APBANK n
READ - APBANK m
Page Active READ with Burst of 4 Interrupt Burst, Precharge Idle
Page Active READ with Burst of 4 Precharge
Internal States
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQM
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
DOUT a DIN b DIN b+1 DIN b+2 DIN b+3
BANK n,COL a
BANK m,COL b
CAS Latency - 3 (BANK n)
tRP - BANK n tRP - BANK m
WRITE - APBANK n
WRITE - APBANK m
READ with Burst of 4 Interrupt Burst, Precharge Idle
Page Active WRITE with Burst of 4 Write-Back
Internal States Page Active
BURST READ/SINGLE WRITETheburstread/singlewritemodeisenteredbyprogrammingthe write burst mode bit (M9) in the mode register to a logic 1. In this mode, all WRITE commands result in the access of a single column location (burst of one), regardless of theprogrammedburstlength.READcommandsaccess columns according to the programmed burst length and sequence,justasinthenormalmodeofoperation(M9= 0).
CONCURRENT AUTO PRECHARGEAnaccesscommand(READorWRITE)toanotherbankwhile an access command with auto precharge enabled is executingisnotallowedbySDRAMs,unlesstheSDRAMsupports CONCURRENT AUTO PRECHARGE. ISSI
SDRAMssupportCONCURRENTAUTOPRECHARGE.FourcaseswhereCONCURRENTAUTOPRECHARGEoccurs are defined below.
READ with Auto Precharge1.InterruptedbyaREAD(withorwithoutautoprecharge):
AREADtobankmwill interruptaREADonbankn,CAS latency later.The PRECHARGE to bank n willbeginwhentheREADtobankmisregistered.
2.InterruptedbyaWRITE(withorwithoutautoprecharge):AWRITEtobankmwillinterruptaREADonbanknwhenregistered.DQMshouldbeusedtwoclockspriortotheWRITEcommandtopreventbuscontention.ThePRECHARGEtobanknwillbeginwhentheWRITEtobank m is registered.
Fig CAP 1 - READ With Auto Precharge interrupted by a READ
Fig CAP 2 - READ With Auto Precharge interrupted by a WRITE
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DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
DIN a DIN a+1 DOUT b DOUT b+1
BANK n,COL a
BANK m,COL b
CAS Latency - 3 (BANK m)
tRP - BANK ntRP - BANK m
WRITE - APBANK n
READ - APBANK m
Page Active WRITE with Burst of 4 Interrupt Burst, Write-Back Precharge
Page Active READ with Burst of 4 Precharge
Internal States tWR - BANK n
DON'T CARE
CLK
COMMAND
BANK n
BANK m
ADDRESS
DQ
T0 T1 T2 T3 T4 T5 T6 T7
NOP NOP NOP NOP NOP NOP
BANK n,COL a
BANK m,COL b
tRP - BANK ntRP - BANK m
WRITE - APBANK n
WRITE - APBANK m
Page Active WRITE with Burst of 4 Interrupt Burst, Write-Back Precharge
Page Active WRITE with Burst of 4 Write-Back
Internal States tWR - BANK n
DIN a DIN a+1 DIN a+2 DIN b DIN b+1 DIN b+2 DIN b+3
WRITE with Auto Precharge3.InterruptedbyaREAD(withorwithoutautoprecharge):
AREADtobankmwill interruptaWRITEonbanknwhen registered, with the data-out appearing CAS latency later.ThePRECHARGEtobanknwillbeginaftertwr is met, where twrbeginswhentheREADtobankmisregistered.ThelastvalidWRITE to bank n will be data-in registeredoneclockpriortotheREADtobankm.
4.InterruptedbyaWRITE(withorwithoutautoprecharge):AWRITE to bank m will interrupt a WRITE on bank n when registered.ThePRECHARGEtobanknwillbeginaftertwr is met, where twrbeginswhentheWRITEtobankmisregistered.ThelastvaliddataWRITEtobanknwillbedataregisteredoneclockpriortoaWRITEtobank m.
Fig CAP 3 - WRITE With Auto Precharge interrupted by a READ
Fig CAP 4 - WRITE With Auto Precharge interrupted by a WRITE
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Integrated Silicon Solution, Inc. — www.issi.com 35Rev. D01/30/08
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INITIALIzE AND LOAD MODE REGISTER(1)
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCH tCLtCK
tCMH tCMS tCMH tCMS tCMH tCMS
tCKS tCKH
T0 T1 Tn+1 To+1 Tp+1 Tp+2 Tp+3
tMRDtRCtRCtRP
ROW
ROW
BANK
tAS tAH
tAS tAHCODE
CODEALL BANKS
SINGLE BANK
ALL BANKS
AUTOREFRESH
AUTOREFRESH
Load MODEREGISTER
T = 100µs Min.
Power-up: VCCand CLK stable
Prechargeall banks
AUTO REFRESH Program MODE REGISTER
NOP PRECHARGE NOP NOP NOP ACTIVE
T
(2, 3, 4)AUTO REFRESH
At least 2 Auto-Refresh Commands
Notes:1. If CSisHighatclockHightime,allcommandsappliedareNOP.2.TheModeregistermaybeloadedpriortotheAuto-Refreshcyclesifdesired.3.JEDECandPC100specifythreeclocks.4.OutputsareguaranteedHigh-Zafterthecommandisissued.
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POWER-DOWN MODE CYCLE
CAS latency = 2, 3
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tAS tAH
BANK
tCHtCLtCK
tCMS tCMH
tCKS tCKH
PRECHARGE NOP NOP NOP ACTIVE
ALL BANKS
SINGLE BANK
ROW
ROW
BANK
tCKStCKS
Precharge allactive banks
All banks idleTwo clock cycles Input buffers gatedoff while in
power-down modeAll banks idle, enterpower-down mode Exit power-down mode
T0 T1 T2 Tn+1 Tn+2
High-Z
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CLOCK SUSPEND MODE
Notes:1. CAS latency = 3, burst length = 22. A8, A9, and A11="Don'tCare"
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tCHtCLtCK
tCMS tCMH
tCKS tCKH
COLUMN m(2)
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
READ NOP NOP NOP NOP NOP WRITE NOP
tCKS tCKH
BANK BANK
COLUMN n(2)
tAC tAC
tOH
tHZ
DOUT m DOUT m+1
tLZ
UNDEFINED
DOUT e+1
tDS tDH
DOUT e
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AUTO-REFRESH CYCLE
CAS latency = 2, 3
tRP tRC tRC
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tAS tAH
tCHtCLtCK
tCMS tCMH
tCKS tCKH
T0 T1 T2 Tn+1 To+1
ALL BANKS
SINGLE BANK
BANK(s)
ROW
ROW
BANK
High-Z
PRECHARGE NOP NOP NOP ACTIVEAutoRefreshAuto
Refresh
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SELF-REFRESH CYCLE
CAS latency = 2, 3
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tAS tAH
BANK
tCLtCHtCK
tCMS tCMH
tCKS tCKH
ALL BANKS
SINGLE BANK
tCKS
Precharge allactive banks
CLK stable prior to exitingself refresh mode
Enter selfrefresh mode
Exit self refresh mode(Restart refresh time base)
T0 T1 T2 Tn+1 To+1 To+2
High-Z
AutoRefresh
AutoRefreshPRECHARGE NOP NOP NOP
tCKS
≥ tRAS
tRP tXSR
DON'T CARE
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READ WITHOUT AUTO PRECHARGE
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP READ NOP NOP NOP PRECHARGE NOP ACTIVE
tAS tAH
tAS tAH
tAS tAH
ROW
ROW
BANK
COLUMN m(2)
tCHtCLtCK
tCMS tCMH
tCKS tCKH
BANK
tRCD CAS Latency
tAC tAC tAC tAC
tOH
tHZ
tOH
DOUT m
tOH
DOUT m+1
tOH
DOUT m+2 DOUT m+3
T0 T1 T2 T3 T4 T5 T6 T7 T8
DISABLE AUTO PRECHARGE
ROW
ROW
BANK
tLZ
tRAS
tRCtRP
ALL BANKS
SINGLE BANK
BANK
Notes:1. CAS latency = 2, burst length = 42. A8, A9, and A11="Don'tCare"
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READ WITH AUTO PRECHARGE
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP READ NOP NOP NOP NOP NOP ACTIVE
tAS tAH
tAS tAH
tAS tAH
ROW
ROW
BANK
COLUMN m(2)
tCHtCLtCK
tCMS tCMH
tCKS tCKH
BANK
tRCD
tRAS
tRC
CAS Latency
tAC tAC tAC tAC
tOH
tHZ
tOH
DOUT m
tOH
DOUT m+1
tOH
DOUT m+2 DOUT m+3
T0 T1 T2 T3 T4 T5 T6 T7 T8
tRP
ENABLE AUTO PRECHARGE
ROW
ROW
BANK
tLZ
Notes:1. CAS latency = 2, burst length = 42. A8, A9, and A11="Don'tCare"
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SINGLE READ WITHOUT AUTO PRECHARGE
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP READ NOP NOP PRECHARGE NOP ACTIVE NOP
tAS tAH
tAS tAH
tAS tAH
ROW
ROW
BANK
COLUMN m(2)
tCHtCLtCK
tCMS tCMH
tCKS tCKH
BANK
tRCD
tRAS
tRC
CAS Latency
tAC
tHZ
tOH
DOUT m
T0 T1 T2 T3 T4 T5 T6 T7 T8
tRP
DISABLE AUTO PRECHARGE
ROW
ROW
BANK
tLZ
ALL BANKS
SINGLE BANK
BANK
Notes:1. CAS latency = 2, burst length = 12. A8, A9, and A11="Don'tCare"
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SINGLE READ WITH AUTO PRECHARGE
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP NOP NOP READ NOP NOP ACTIVE NOP
tAS tAH
tAS tAH
tAS tAH
ROW
ROW
BANK
COLUMN m(2)
tCHtCLtCK
tCMS tCMH
tCKS tCKH
BANK
tRCD
tRAS
tRC
CAS Latency
tAC
tHZ
tOH
DOUT m
T0 T1 T2 T3 T4 T5 T6 T7 T8
tRP
ENABLE AUTO PRECHARGE
ROW
ROW
BANK
Notes:1. CAS latency = 2, burst length = 12. A8, A9, and A11="Don'tCare"
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ALTERNATING BANK READ ACCESSES
BANK 0 BANK 3 BANK 3 BANK 0
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tRCD - BANK 0 CAS Latency - BANK 0 tRCD - BANK 0
tRAS - BANK 0
tRC - BANK 0
tCHtCLtCK
tCMS tCMH
tCKS tCKH
ACTIVE NOP READ NOP ACTIVE NOP READ NOP ACTIVE
ROW
ROW
BANK 0
ROW ROW
tRRD tRCD - BANK 3
tRP - BANK 0
COLUMN m(2) ROW COLUMN b(2) ROW
ENABLE AUTO PRECHARGE ENABLE AUTO PRECHARGE
T0 T1 T2 T3 T4 T5 T6 T7 T8
tAC
tOH tOH tOH tOH tOH
DOUT m DOUT m+1 DOUT m+2 DOUT m+3 DOUT b
tAC tAC tAC tAC tAC
tLZ
CAS Latency - BANK 3
Notes:1. CAS latency = 2, burst length = 42. A8, A9, and A11="Don'tCare"
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Integrated Silicon Solution, Inc. — www.issi.com 45Rev. D01/30/08
IS42S16400
READ - FULL-PAGE BURST
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP READ NOP NOP NOP NOP NOP BURST TERM NOP NOP
tAS tAH
tAS tAH
tAS tAH
ROW
ROW
BANK
COLUMN m(2)
tCHtCLtCK
tCMS tCMH
tCKS tCKH
BANK
tRCD CAS Latency
tAC tACtAC tACtAC tHZ
tLZ
tAC
tOH tOH tOH tOH tOH tOH
DOUT m DOUT m+1 DOUT m+2 DOUT m-1 DOUT m DOUT m+1
each row (x4) has1,024 locations
Full pagecompletion
Full-page burst not self-terminating.Use BURST TERMINATE command.
T0 T1 T2 T3 T4 T5 T6 Tn+1 Tn+2 Tn+3 Tn+4
Notes:1. CAS latency = 2, burst length = full page2. A8, A9, and A11="Don'tCare"
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46 Integrated Silicon Solution, Inc. — www.issi.com Rev. D
01/30/08
IS42S16400
READ - DQM OPERATION
DON'T CARE
UNDEFINED
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP READ NOP NOP NOP NOP NOP NOP
tAS tAH
tAS tAH
tAS tAH
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
ROW
ROW
BANK
tRCD CAS Latency
DOUT m DOUT m+2 DOUT m+3
COLUMN m(2)
BANK
tCHtCLtCK
tCMS tCMH
tCKS tCKH
tOHtOHtOH tACtAC
tACtHZ tHZtLZ tLZ
T0 T1 T2 T3 T4 T5 T6 T7 T8
Notes:1. CAS latency = 2, burst length = 42. A8, A9, and A11="Don'tCare"
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Integrated Silicon Solution, Inc. — www.issi.com 47Rev. D01/30/08
IS42S16400
WRITE - WITHOUT AUTO PRECHARGE
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tRCD
tRAStRC
tCHtCLtCK
tCMS tCMH
tCKS tCKH
ACTIVE NOP WRITE NOP NOP NOP PRECHARGE NOP ACTIVE
tWR(3) tRP
COLUMN m(2) ROW
DISABLE AUTO PRECHARGEROW
ROW
ROW
BANK
tDS tDH tDS tDH tDS tDHtDS tDH
DIN m DIN m+1 DIN m+2 DIN m+3
BANK BANK BANK
ALL BANKS
SINGLE BANK
T0 T1 T2 T3 T4 T5 T6 T7 T8
Notes:1. burst length = 42. A8, A9, and A11="Don'tCare"3. tras must not be violated
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48 Integrated Silicon Solution, Inc. — www.issi.com Rev. D
01/30/08
IS42S16400
WRITE - WITH AUTO PRECHARGE
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tRCD
tRAStRC
tCHtCLtCK
tCMS tCMH
tCKS tCKH
ACTIVE NOP WRITE NOP NOP NOP NOP NOP NOP ACTIVE
tWR tRP
COLUMN m(2) ROW
BANK BANK
ENABLE AUTO PRECHARGEROW
ROW
ROW
BANK
tDS tDH tDS tDH tDS tDHtDS tDH
DIN m DIN m+1 DIN m+2 DIN m+3
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Notes:1. burst length = 42. A8, A9, and A11="Don'tCare"
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Integrated Silicon Solution, Inc. — www.issi.com 49Rev. D01/30/08
IS42S16400
SINGLE WRITE - WITHOUT AUTO PRECHARGE
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tDS tDH
tRCD
tRAStRC
tCHtCLtCK
tCMS tCMH
tCKS tCKH
ACTIVE NOP WRITE NOP(4) NOP(4) PRECHARGE NOP ACTIVE NOP
tWR(3) tRP
DISABLE AUTO PRECHARGE
ROW
ROW
ROW
BANK
DIN m
COLUMN m(2) ROW
BANK BANK BANK
ALL BANKS
SINGLE BANK
T0 T1 T2 T3 T4 T5 T6 T7 T8
Notes:1. burst length = 12. A8, A9, and A11="Don'tCare"3. tras must not be violated
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50 Integrated Silicon Solution, Inc. — www.issi.com Rev. D
01/30/08
IS42S16400
SINGLE WRITE - WITH AUTO PRECHARGE
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tDS tDH
tRCD
tRAStRC
tCHtCLtCK
tCMS tCMH
tCKS tCKH
ACTIVE NOP(3) NOP(3) NOP(3) WRITE NOP NOP NOP ACTIVE NOP
tWR tRP
COLUMN m(2) ROW
BANK BANK
ENABLE AUTO PRECHARGE
ROW
ROW
ROW
BANK
DIN m
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Notes:1. burst length = 12. A8, A9, and A11="Don'tCare"
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Integrated Silicon Solution, Inc. — www.issi.com 51Rev. D01/30/08
IS42S16400
ALTERNATING BANK WRITE ACCESS
BANK 0 BANK 1 BANK 1 BANK 0
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
tAS tAH
tAS tAH
tAS tAH
tDS tDH tDS tDH tDS tDH
tRCD - BANK 0 tRCD - BANK 0tWR - BANK 1
tRAS - BANK 0tRC - BANK 0
tCHtCLtCK
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
tCMS tCMH
tCKS tCKH
ACTIVE NOP WRITE NOP ACTIVE NOP WRITE NOP NOP ACTIVE
DIN m DIN m+1 DIN m+2 DIN m+3 DIN b DIN b+1 DIN b+2 DIN b+3
ROW
ROW
BANK 0
ROW ROW
tRRD tRCD - BANK 1
tWR - BANK 0 tRP - BANK 0
COLUMN m(2) ROW COLUMN b(2) ROW
ENABLE AUTO PRECHARGE ENABLE AUTO PRECHARGE
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9
Notes:1. burst length = 42. A8, A9, and A11="Don'tCare"
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52 Integrated Silicon Solution, Inc. — www.issi.com Rev. D
01/30/08
IS42S16400
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP WRITE NOP NOP NOP NOP BURST TERM NOP
tAS tAH
tAS tAH
tAS tAH
tDS tDH tDS tDH tDS tDH
ROW
ROW
BANK
tRCD
DIN m DIN m+1 DIN m+2 DIN m+3 DIN m-1
COLUMN m(2)
tCHtCLtCK
tDS tDH tDS tDH tDS tDH
tCMS tCMH
tCKS tCKH
BANK
Full page completed
T0 T1 T2 T3 T4 T5 Tn+1 Tn+2
WRITE - FULL PAGE BURST
Notes:1. burst length = full page2. A8, A9, and A11="Don'tCare"
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Integrated Silicon Solution, Inc. — www.issi.com 53Rev. D01/30/08
IS42S16400
DON'T CARE
CLK
CKE
COMMAND
DQM/DQML, DQMH
A0-A9, A11
A10
BA0, BA1
DQ
tCMS tCMH
ACTIVE NOP WRITE NOP NOP NOP NOP NOP
tAS tAH
tAS tAH
tAS tAH
tDS tDH tDS tDH tDS tDH
ENABLE AUTO PRECHARGE
DISABLE AUTO PRECHARGE
ROW
ROW
BANK
tRCD
DIN m DIN m+2 DIN m+3
COLUMN m(2)
BANK
tCHtCLtCK
tCMS tCMH
tCKS tCKH
T0 T1 T2 T3 T4 T5 T6 T7
WRITE - DQM OPERATION
Notes:1. burst length = 42. A8, A9, and A11="Don'tCare"
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54 Integrated Silicon Solution, Inc. — www.issi.com Rev. D
01/30/08
IS42S16400
ORDERING INFORMATION
Commercial Range: 0°C to 70°C Frequency Speed (ns) Order Part No. Package
166MHz 6 IS42S16400-6TL 400-milTSOPII,Lead-free
143MHz 7 IS42S16400-7TL 400-milTSOPII,Lead-free
Industrial Range: -40°C to 85°C Frequency Speed (ns) Order Part No. Package
166MHz 6 IS42S16400-6TLI 400-milTSOPII,Lead-free
143MHz 7 IS42S16400-7TLI 400-milTSOPII,Lead-free
-
PACKAGING INFORMATION
Integrated Silicon Solution, Inc. 1Rev. D03/13/07
Plastic TSOP 54–Pin, 86-PinPackage Code: T (Type II)
Plastic TSOP (T - Type II)Millimeters Inches
Symbol Min Max Min MaxRef. Std.
No. Leads (N) 54
A — 1.20 — 0.047A1 0.05 0.15 0.002 0.006A2 — — — —b 0.30 0.45 0.012 0.018C 0.12 0.21 0.005 0.0083D 22.02 22.42 0.867 0.8827E1 10.03 10.29 0.395 0.405E 11.56 11.96 0.455 0.471e 0.80 BSC 0.031 BSCL 0.40 0.60 0.016 0.024
L1 — — — — ZD 0.71 REF
α 0° 8° 0° 8°
D
SEATING PLANE
be C
1 N/2
N/2+1N
E1
A1
A
E
L α
ZD
Notes:1. Controlling dimension: millimieters,
unless otherwise specified.2. BSC = Basic lead spacing between
centers.3. Dimensions D and E1 do not include
mold flash protrusions and should bemeasured from the bottom of thepackage.
4. Formed leads shall be planar withrespect to one another within 0.004inches at the seating plane.
Plastic TSOP (T - Type II)Millimeters Inches
Symbol Min Max Min MaxRef. Std.
No. Leads (N) 86
A — 1.20 — 0.047A1 0.05 0.15 0.002 0.006A2 0.95 1.05 0.037 0.041b 0.17 0.27 0.007 0.011C 0.12 0.21 0.005 0.008D 22.02 22.42 0.867 0.8827E1 10.03 10.29 0.395 0.405E 11.56 11.96 0.455 0.471e 0.50 BSC 0.020 BSCL 0.40 0.60 0.016 0.024
L1 0.80 REF 0.031 REF ZD 0.61 REF 0.024 BSC
α 0° 8° 0° 8°
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