chapter1 fundamentals of microwave engineering
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
MICROWAVE INTERGRATED CIRCUITS
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Huynh Phu Minh Cuong, PhD hpmcuong@hcmut.edu.vn
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT 2
Instructor: Cuong Huynh (PhD)
Office: 112 B3 , HCMUT
Office Hours: Friday 2:00-4:00 PM
E-mail: hpmcuong@hcmut.edu.vn
Textbook:
[1] David M. Pozar, Microwave Engineering, John Wiley & Sons, Inc, 4th ed.,
2012.
References:
[2] Gonzalez, Microwave Transistor Amplifiers, Prentice Hall, 2nd ed. 1997
[3] I.D. Robertson, S. Lucyszyn, RFIC and MMIC Design and Technology, The
Institution of Electrical Engineers, London, 2001
[4] V nh Thnh, Mch Siu Cao Tn, NXB HQG, 2006
[5] V nh Thnh, K Thut Siu Cao Tn, NXB HQG, 2004.
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT 3
Learning outcomes Understand effects of noise and nonlinearity distortion on microwave systems and system parameters such as noise figure, input/output referred
noise, 1-dB compression point and third-order intercept point.
Analyze various microwave transceiver architectures and design system parameters for microwave transceivers.
Analyze, design, fabricate and measure microwave passive components such as power divider/combiner, directional coupler, hybrid coupler, circulator
and T/R switch.
Analyze, design, fabricate and measure microwave filters using distributed elements.
Analyze, design, fabricate and measure microwave amplifiers including low noise amplifier, broadband amplifier and power amplifier.
Analyze, design, fabricate and measure microwave mixers and oscillators. Use microwave simulation soft-wares such as ADS, Cadence and SDH, and equipments such as network analyzer, spectrum analyzer, synthesizer and noise
figure analyzer.
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT 4
Grading
Homework 20% You are encouraged to work together with your classmates on the homework. HW can be turned in via Email.
No late homework will be graded
Final Project 30% Report and PowerPoint presentation are required
Final Exams 50% Closed book One single-sided A4 of notes is allowed
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT 5
Outline
Chapter 1: Fundamentals of Microwave Engineering
Chapter 2: System Parameters and Transceiver
Architectures
Chapter 3: Power Dividers and Directional Couplers
Chapter 4: Microwave Amplifier
Chapter 5: Oscillators and Mixers
Chapter 6: Microwave Filters
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT 6
Huynh Phu Minh Cuong hpmcuong@hcmut.edu.vn
Department of Telecommunications
Faculty of Electrical and Electronics Engineering
Ho Chi Minh city University of Technology
Chapter 1
Fundamentals of Microwave Engineering
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Introduction
and emerging applications !
Integrated Circuits (IC)
Is the key driver behind the scene !
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Introduction
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Introduction
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1.1 Fundamentals of microwave engineering
Transmission lines
. .( ) . .x xV x V e V e
0
1 ( )( )
1 ( )
xZ x Z
x
2( ) ( ). dx l e
0
0
( ) L
L
Z Zl
Z Z
00
0
. . ( )( )
. . ( )
L
L
Z j R tg dZ x R
R j Z tg d
. .
0 0
( ) l lV V
I l e eZ Z
1
1S VSWR
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1.1 Fundamentals of microwave engineering
Smith chart
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1.1 Fundamentals of microwave engineering
Impedance Matching
Using lump elements
Using transmission line
ADS Smith chart tool
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1.1 Fundamentals of microwave engineering
Scattering Parameters
At microwave regime: S-parameters
matrix, defined in terms of traveling
waves, is used instead.
The scattering matrix represents the
relation between the voltage incident
waves on the ports to voltage reflected
wave from the ports.
S-parameters are measured with
matched loads rather than open- or
short-circuits.
At microwave frequencies, matched
loads are relatively easy to realize.
S-parameters are measured using
Vector Network Analyzer (VNA).
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
S-Parametter Definition
V+n is the incident voltage wave on port n
V n is the reflected voltage wave from port n.
The scattering matrix, or [S] matrix, is defined in relation to these incident
and reflected voltage waves.
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
S-Parametter Definition
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
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Dr. Cuong HuynhTelecommunications DepartmentHCMUT
Example: Find [S]
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1.2 Technology and device for microwave integrated circuits
Target: smaller size, lighter weight, lower power requirements, lower cost,
and increased complexity.
Microwave integrated circuits (MICs) Technology replace bulky and
expensive waveguide and coaxial components with small and inexpensive planar
components.
MIC technology has advanced to the point where complete microwave
subsystems, such as receiver front ends and radar transmit/receive modules, can be
integrated on a chip that is only a few square millimeters in size.
Hybrid MICs
MIC
MMIC/RFIC Hybrid Microwave Integrated Circuits
Monolithic Microwave Integrated Circuits
Radio Frequency Integrated Circuits
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1.2 Technology and device for microwave integrated circuits
Hybrid MICs MMIC/RFIC
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The metaloxidesemiconductor field-effect transistor (MOSFET) was first patented
by Julius Edgar Lilienfeld in 1925, well before
the invention of BJT.
Due to the fabrication limitation, MOSFET has not been used until the early years of 1960s.
CMOS (Complementary MOS p- and n-type device) was patented by Frank Wanlass in 1967,
initiating a revolution in the semiconductor
industry.
CMOS initially dominates in the digital circuit/systems while others for analog.
Why CMOS now ? Low cost, high integration
and solution for SOC.
1.2 Technology and device for microwave integrated circuits
Technology CMOS
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1.2 Technology and device for microwave integrated circuits
CMOS Technology
CMOS Transistors Interconnect Diodes Resistors Capacitors Inductors Bipolar Transistors
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1.2 Technology and device for microwave integrated circuits
CMOS Technology Intel 45 nm CMOS Process
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1.2 Technology and device for microwave integrated circuits
Microwave Devices
DIODES BIPOLAR JUNCTION TRANSISTORS FIELD EFFECT TRANSISTORS Capacitor Inductor
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Microwave devices
1.2 Technology and device for microwave integrated circuits
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NMOS Transistor
1.2 Technology and device for microwave integrated circuits
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PMOS Transistor
1.2 Technology and device for microwave integrated circuits
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Interconnect
1.2 Technology and device for microwave integrated circuits
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Diode
1.2 Technology and device for microwave integrated circuits
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Resistor
1.2 Technology and device for microwave integrated circuits
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Capacitor
1.2 Technology and device for microwave integrated circuits
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Inductor
1.2 Technology and device for microwave integrated circuits
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Circuit Simulator: ADS, Cadence EM simulator: Momentum, HFSS,IE3D, CST, SONET
1.3 Microwave simulation tools
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