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Document No.173824
Advanced Packaging Materials and Technologies for Sophisticated SiPs
Oct. 2017
Document No.1738242
Sumitomo Bakelite Co., Ltd. Confidential
1907 Dr. L.H Bäekeland invented in USA.
Trade Name「Bakelite」1911 Dr. Takamine got the license for
domestic production.Sankyo company(currently Daiichi-Sankyo Co.,
Ltd) started a trial production of phenol. 1955 Sumitomo Bakelite Co., Ltd was found.
L.H Bäekeland[1863~1944]
★The world first’s plastic is Phenolic resin.
What is Bakelite?Phenolic resin is synthesized by phenol and formalin.
Dr. Takamine[1854~1922]
Encapsulation material for semiconductors
Molded products for automobiles
Medicine packaging
History
Document No.1738243
Sumitomo Bakelite Co., Ltd. Confidential
0
200
400
600
800
1000
1200
1400
0 2 4 6 8 10 12 14 16
PMIC/RF/WiFi AP/BB
I/O Count(Ball)3D
Package Size / Number of component
Embedded SiP
3D IC TSV
Fan-Out WLP
2.5D interposer
Exposed PoP Coreless ETS-PoP
Fan-Out PoP
Fan-Out SiP
MeP-PoP(HB-PoP)
Increase data transfer amount Increase I/O count Fine L/S RDL technology toachieve high speed data transfer
No change I/O countAccelerate modularizationwith component
FC SiPWB SiP
Evolution of Packaging and Trend of Advanced PKG
Sophisticated SiPs coming…
Document No.1738244
Sumitomo Bakelite Co., Ltd. Confidential
Sensitive Device ProtectionEMI Shielding
Solder Bump Protection
Multi Layer Thinner Substrate
Shallow LASER Marking
High Thermal Conductivity
SiPs : Several Technology Requirements
Narrow Gap Filling
SiP
Document No.1738245
Sumitomo Bakelite Co., Ltd. Confidential
Buffer coating / PID by
SUMIRESIN EXCEL® CRCWW No.1 share for buffer coatingHigh speed & High resolution
Encapsulation by SUMIKON® EME
WW No.1 shareBroad lineup to cover all PKG typeand molding method
Wafer Dicing using
SUMILITE® FSLSpecial technology for ESD less filmFine pattern formability
Die bonding by
SUMIRESIN EXCEL® CRMWW No.2 sharebroad lineup for various PKG
LαZ®Interposer building by(Prepreg, Core and SR are available)
Low CTE, Low dimension changeHigh stiffness, R to R support.
Sumitomo Bakelite can support from Wafer to PKG
easy SMT process handling by
SUMILITE® CSL
Special technology for ESD less cover tape
Sumitomo Bakelite ‘‘One Stop Solution’’
Document No.1738246
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.1738247
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.1738248
Sumitomo Bakelite Co., Ltd. Confidential
Fille
r D
istr
ibu
tio
n
Filler Size
Large filler stuck and cause
incomplete filling.
Apply the filler with top cut
FillerTop cut
Narrow Gap Filling
Side view
Bottomview
Si
Filler richResin rich
Filler in Molding Compound
Document No.1738249
Sumitomo Bakelite Co., Ltd. Confidential
Test die with Cu pillarDie size : 10mm x 10mm
Pillar pitch : 200um
Pillar height : 5um
Pillar diameter : 100um
Die bonding on substrate at 4 corners of Cu die
Molding
Observe filling performance
Take out from substrate
Bad fillingGood filling
EMC
Substrate
Test die
5um
Narrow Gap Filling
Document No.17382410
Sumitomo Bakelite Co., Ltd. Confidential
EMC with5um sieved
Filling : OK
EMC with12um sieved
Filling : NG
5um gap filling
Narrow Gap Filling
Fine filler top cut is important for narrow gap filling
Document No.17382411
Sumitomo Bakelite Co., Ltd. Confidential
Newtonian fluidViscosity does not depend on the shear rate
Vis
cosi
ty
Shear rate
Pseudoplastic fluid
Dilatant fluid
Newtonian fluid
Pseudoplastic fluid Newtonian fluid
Unbalanced flow Balanced flow
Narrow Gap Filling
Document No.17382412
Sumitomo Bakelite Co., Ltd. Confidential
Grade STD Sample 1
Filler Treatment
nonSurface
Modification
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
0.1 1 10 100 1000
Vis
cosi
ty [
Pa・
s]
Rotation [rpm]
7FE076
7FE078
Sample 1
STD
SamplePlate
Torque
Narrow Gap Filling
Sample will be ready soon.
Study of filler surface modification in EMC
Newtonian fluid
Filler with surface modification show Newtonian-fluid like behavior.
< Filling Test Result : FCCSP >- Die size 10 x 10mm- Bump height 35um x Pitch 150um
P-lapping to check void
STD Sample 1
No void
Document No.17382413
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382414
Sumitomo Bakelite Co., Ltd. Confidential
Solder Bump Protection
Solder bump in SiP is larger than micro-bump in FCCSP.
Several factors need to be considered for protection from damage.
Some examples of study are introduced as following pages.
Document No.17382415
Sumitomo Bakelite Co., Ltd. Confidential
<Test PKG>FCCSP in SiP
<Test condition>Reflow: 260degCx3Filler
change Random flash occurred by Grade B.
After MSL & reflow x 3Micro void
Random flash was improved by Grade A.
There are some void around bumps after mold.
Smaller Filler is better.
EMC Information
EMC Grade A Grade B
Sieving size 32um 20um
Ave filler size 10um 5umMoisture in void explodes and leads delamination and solder flash.
Solder Flash
Solder Bump Protection
Solder extrusion after reflow : Effect of Filler Size in EMC
Document No.17382416
Sumitomo Bakelite Co., Ltd. Confidential
0
20
40
60
80
100
0 500 1000 1500 2000
Sold
er F
lash
Are
a in
dex
[-
]
Modulus at 260’C (MPa)
Grade C Grade D Grade E
Resin Type C D E
Modulus at 260’C 2000 1000 500
Flash area 100 30 0
Low Modulus (=stress) is important.
<Grade C after reflow> <Grade E after reflow>
Solder Flash No flashSolder bump(200um)
Solder Bump Protection
Solder extrusion after reflow : Effect of Modulus at 260’C of EMC
EMC Information
Document No.17382417
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382418
Sumitomo Bakelite Co., Ltd. Confidential
Volume EMC < PCB EMC > PCB
PKG structure
WarpageDirection
RT
260degC
EMC property dierection High CTE / Modulus Low CTE / Low Modulus
cry shape
cry shape
smile shape
smile shape
EMC with high / low CTE & Modulus is required to control warpage.
For Ultra thin PCB, substrate with carrier is needed to avoid bending.
Warpage Control
Ultra thin PCB
Document No.17382419
Sumitomo Bakelite Co., Ltd. Confidential
0
50
100
150
200
250
0 100 200 300
TMA
[u
m]
Temp. [degC]
Silica
New filler
Warpage is improved
TMA
187ppm
79ppm
26ppm
18ppm
63ppm
α phase(RT) β phase(HT)
phase transition (reversible)
Ca. 230degC
Phase transition
PKG Size mm 14x14
Chip size mm 10x10x0.06
Bump pitch um 200
Bump Height um 70
Mold Thickness um 130
Subs. thickness*1 um 280
*1) Substrate : Low CTE type
Warpage Test by Thinner PKG
44 37
-132
-87-150
-100
-50
0
50
100
G330SA w/ new filler
War
pag
e [
um
]
RT
HT
Warpage Control : EMC
EMC with high CTENew filler can achieve high CTE
EMC
w/ Silica
EMC
w/ New filler
Document No.17382420
Sumitomo Bakelite Co., Ltd. Confidential
Negative CTE filler can decrease CTE.But poor flowability due to flake shape.
Spherical shape under development.
TMA
Grade (Ref) Leg 1
Filler type - silicaSilica
+Negative
General Property
Spiral Flow cm >260 70
Gel Time sec 45 40
CTE1 / 2 ppm/’C 13 / 43 9 / 38
Tg ‘C 145 145
F. Modulus (25’C) MPa 19000 22000
F. Modulus (260’C) MPa 700 1000
0
20
40
60
80
100
0 50 100 150 200 250
TMA
(u
m)
Temp. (deg.C)
Ref (Silica)
Leg2-1 (+Negative)Leg1
Warpage Control : EMC
EMC with low CTENegative CTE filler under development
Document No.17382421
Sumitomo Bakelite Co., Ltd. Confidential
Adhesion of photo sensitive area lowered
Laminate
Imaging(Photo sensitive only unit area)
Attaching strip substrate
Photo sensitive temporary bonding film
Carrier board
Strip substrate
Die mount
Molding
Dicing to Units
Process Image of photo sensitive Temporary Bonding Film (TBF)80umt
50umt
Substrate Bending
Warpage Control : Substrate
Thinner substrate need carrier board to avoid bending. Temporary Bonding Film for carrier is required.
Document No.17382422
Sumitomo Bakelite Co., Ltd. Confidential
Substrate (100umt)
TBF (10umt)
SUS board (100umt)
SEM Image of Substrate SurfaceProcess Result
Die mount(260 deg.C reflow)
Good(non-Delamination)
EMC Molding(175deg.C/5h)
Good(non-Delamination)
Detach Good
No Residue on Substrate Surface
Non-Exposure Area
Exposure Area
Dicing Substrate and Detaching
Warpage Control (Thinner Substrate)
Detaching ability (Subs)
We have been developing film for matching this process.
Document No.17382423
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382424
Sumitomo Bakelite Co., Ltd. Confidential
Shallow depth after LASER marking
Thinner gap on tall component
Shallow LASER Marking
Study of EMC
Coloring agent STDNew
Additive
Property
Spiral Flow cm 135 150
Gel Time sec 59 68
CTE1 ppm 11 11
CTE2 ppm 43 44
Tg ‘C 130 135
F. Modulus (25’C) N/mm2 20000 20500
F. Modulus (260’C) N/mm2 500 610
Specific Gravity - 1.98 1.98
Shrinkage % 0.17 0.18
Note: The value on this table is typical one.
EMC with new additive to achieve good visibility and lower depth.
Document No.17382425
Sumitomo Bakelite Co., Ltd. Confidential
Marking Condition 270mm/s, 1.2A 400mm/s, 1.2A 300mm/s, 1.0A
EMC w/ STDdepth
QR recognition25um
Hard13um
hard8um
hard
EMC w/ New Additivedepth
QR recognition20um
hard10um
hard5um
easy
EMC w/ New Additive* after sputter depth
QR recognition20um
Easy10um
easy5umeasy
Laser-making Equipment:SFL263 (EO Technics), Wavelength:1064nm, Max Power:40W
* hard / easy : recognition test by phone camera (10pcs). “hard” needs to raise the contrast by light.
LASER Marking Depth and QR Cord Recognition Test
New Additive achieve shallow depth (5um) and good recognition due to higher contrast.
Shallow LASER Marking
Document No.17382426
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382427
Sumitomo Bakelite Co., Ltd. Confidential
Fragile Component Protection
Low pressure molding as technical challenge
Panel size Machine size
100mm x 300mm Max 4580mm (Wide)
540mm x 660mm Max 5060mm (Wide)
1000mm x 1000mm ? Max > 7000mm ?
To mold sensitive device To avoid huge molding machine
by large panel molding
SAW/BAW with hollow structure
Study of low pressure molding as following page.
Target pressure : 3 MPa
Document No.17382428
Sumitomo Bakelite Co., Ltd. Confidential
Test Vehicle- Mold thickness : 330umt
- Substrate size : 245x75x0.2mmt (2 block)
EMC Grade
Filler cut (um)
NGFP*1
(MPa)
Transfer Pressure (MPa)
3 2 1.5 1
A 20 2.0 NG NG* NG* NG*
B 12 0.9 OK* OK NG* NG
C 20 0.5 OK OK NG NG*
D 24 0.2 OK* OK OK NG
* No molding test but estimated. *1) Narrow Gap Flow Pressure at 0.5mmt
Molding Trial is supported by APIC YAMADA Corporation
Molding Information*Mold chase VCH- Machine : GTM-X VCH
- Plunger type :Resin ring type
(AYC dome)
- Mold temp. : 175’C
- Pre-heat : 0sec
- Tr. Speed : 1.2mm/s
- Vacuum : 1.1kpa
OK NG
Incomplete fill
Filling Test Result
< Next page>
Filling test by FCCSP
Fragile Component Protection
Further study for better filling at low pressure molding on going !
Document No.17382429
Sumitomo Bakelite Co., Ltd. Confidential
Test Vehicle
- Mold thickness : 330umt
- Substrate size : 245x75x0.2mmt (2 block)
- Die size : 5mmx5mmx0.10mmt
- Solder Bump : height 100um x Pitch 200um
- EMC : Grade-B
Filling Test Result (Void under F/C)
Tr. Pressure : 2MPa Tr. Pressure : 1MPa
No void Void
Filling under F/C until 2MPa is OK.
Fragile Component Protection
Document No.17382430
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382431
Sumitomo Bakelite Co., Ltd. Confidential
< Scotch tape test >Evaluation sampleAfter scotch tape test
We count number of delamination
0
5
10
15
20
0 0.5 1 1.5 2
Num
ber
of
dela
min
ation
Chemical amount
1a 2a 3a 4a
EMI Shielding
Adhesion can be improved by EMC.Additional study keep going.
Adhesion Study of EMC-Metal : EMC formulation
We studied adhesion of sputtering metal to EMC.
Test Mehod
Document No.17382432
Sumitomo Bakelite Co., Ltd. Confidential
EMI Shielding
Adhesion Study of EMC-Metal : Surface Activation
EMC
Substrate
Activation Cu plating
Cu pealing test
Cu pealing Test
2
2.5
3
3.5
4
4.5
5
without with ActivationPe
alin
g st
ren
gth
(N
/cm
)
Surface Activation also can enhance adhesion.
Document No.17382433
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382434
Sumitomo Bakelite Co., Ltd. Confidential
Die attach film (cDDF) Die attach paste
Fillet control
BLT control
Resin bleed
No fillet
No die tilt
No resin bleed
cDDF is better than die attach paste for SiP.
Narrow space for die attach material in SiP
It is very close for each unit in SiP. Control die attach material is key.
High Density Component Arrangement
Document No.17382435
Sumitomo Bakelite Co., Ltd. Confidential
<Features of cDDF>・ High electric conductivity(4E-4Ω.cm) ・ Good reliability for various metal surface ・ Low outgas during curing (0.1%)
Die size
1x1mm2 5x5mm2
■Process Performance~Dicing~ ~Pick Up~
No residueafter picking up
Die
DAF
Dicing Sheet
Pick up
(Die thickness:200um)
■Reliability
■Bonding controlDDF Paste
No die flyafter dicing
No fillet & bleed after die bonding
High Density Component Arrangement
Level 3 + R260x3 Pass
Document No.17382436
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382437
Sumitomo Bakelite Co., Ltd. Confidential
Example of good (small) warpage
Example of very large warpage
Stress Index of EMC (=CTE1 x E1*)(S
mal
l) W
afe
r w
arp
age
(Lar
ge)
(Small) (Large)
12inch
12inch
30mm warpage
3mm warpage
* E1: Flexural modulus @25degC
FOWLP SiP
Lower stress index EMC can achieve low wafer warpage.
Key property of EMC for WLP : Warpage Control
Document No.17382438
Sumitomo Bakelite Co., Ltd. Confidential
0.0
2.0
4.0
6.0
8.0
10.0
0 100 200 300
Waf
er
war
pag
e(m
m)
Stress index @25degC
EMC-1 EMC-2 EMC-3 EMC-4 LMC
FC wt% 90 89 89 90 85
CTE1 ppm 7 9 8 7 10
E1 GPa 27 20 20 15 25
Stress index 189 180 160 105 250
EMC-4
LMC
15mmsq
10.5mm-sq
200umt
300umt
PID:7um/7um
12” wafer warpage Unit coplanarity
-100
-50
0
50
100
150
200
25
50
75
10
0
12
5
15
0
17
5
20
0
22
5
25
0
26
0
25
0
22
5
20
0
17
5
15
0
12
5
10
0
75
50
35
Un
it c
op
lan
arit
y(u
m)
Temperature (degC)
LMC
EMC-1
EMC-4
FOWLP SiP
Lower stress index EMC also show low unit warpage.
Document No.17382439
Sumitomo Bakelite Co., Ltd. Confidential
-8
-6
-4
-2
0
2
4
6
0 1 2 3 4 5
War
pag
e(m
m)
RDL layer number
■FC84% (SI=232)◆ FC90% (SI=40)
RDL
EMC
RDL
EMC
RDL: CRC-8903, 1~4 layer(1layer=7umt)
Mold thickness:450umt
Die size:10.5mm□, 350umt
RDL layer number impact on warpagedue to high CTE of RDL.
FOWLP SiP
Warpage Study of EMC-RDL
Considering EMC / RDL / PKG design is important.
Document No.17382440
Sumitomo Bakelite Co., Ltd. Confidential
Contents
Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement
New Trend - FOWLP SiP- Low Df Material for 5G
Document No.17382441
Sumitomo Bakelite Co., Ltd. Confidential
Automotive Radar 5G communicationsWi Gig IOT
Utilization of milli-wave bands is increasing for high speed and large data transfer.
Low Df material at high frequency bands is required.
GSM mobile phone
1GHz 20GHz 100GHz
Microwave oven
Satellite communications
Millimeter wave communications
Micro wave communications
Quasi-millimeter
Low Df Material for 5G
Document No.17382442
Sumitomo Bakelite Co., Ltd. Confidential
Item Unit LAZ-6785KS-HGlass Cloth Style #1027 #1017
Df 10GHz - 0.004 0.004Dk 10GHz - 3.6 3.6
RC % 71 77
Tg DMA deg.C 235 235
CTE (XY) a1 ppm/C 12 15
Tensile Modulus 25C GPa 18 14
260C GPa 9 6
Substrate Material
ME
5min.@80deg.C 10min.@80deg.C
LAZ-6785KS-H#1027_35um
No smear No smear
*SW : 5min.@60deg.C, RE : 5min.@40deg.C
<Process-ability of Laser BVH drill process>
Low Df Material for 5G
Substrate with low Df is ready.
Document No.17382443
Sumitomo Bakelite Co., Ltd. Confidential
Grade Ref New EMC
Resin Type - Standard Low Df Type
General property
Df @ 60GHz 0.009 0.004
Dk @ 60GHz 3.8 3.7
Spiral Flow cm 195 150
Gel Time sec 50 30
Alpha 1 / 2 x10-5/degC 1.0 / 4.0 1.0 / 4.0
Tg degC 150 140
F. Strength@RT N/mm2 140 100
@260 N/mm2 15 10
F. Modulus@RT N/mm2 22000 25000
@260 N/mm2 600 300
Water absorption % 0.20 0.20
Mold shrinkage % 0.12 0.10Note : These values are not guaranteed, just typical one.
Substrate Material : EMC
Low Df Material for 5G
EMC sample with Low Df is ready.
Document No.17382444
Sumitomo Bakelite Co., Ltd. Confidential
Summary
We keep exploring new material & technology
to achieve your innovative product.
Document No.173824
【Disclaimer】
The information presented in this document is provided in good faith, but no warranty is given or is to be implied regarding its accuracy or relevance to any particular application. Users must satisfy themselves regarding the suitability and safety of their use of the information and products in the application concerned. Nothing herein is to be construed as advising or authorizing the use of any invention covered by existing patents without license from the owners thereof.
【 Copyright 】
All copyrights in or related to this document belong to Sumitomo Bakelite Co., Ltd. or its group companies, unless otherwise indicated. This document and its contents may not used (including reproduced, altered, distributed or transmitted) without prior consent of Sumitomo Bakelite Co., Ltd. or its group companies.
【 Company Names】
On this document, the name of the companies may be represented in simplified forms by omitting "Company Limited", "Inc." and/or other legal entity identifications.
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