advanced packaging materials and · 2020. 2. 22. · - vacuum : 1.1kpa ok ng incomplete fill...

Document No.173824

Advanced Packaging Materials and Technologies for Sophisticated SiPs

Oct. 2017

Document No.1738242

Sumitomo Bakelite Co., Ltd. Confidential

1907 Dr. L.H Bäekeland invented in USA.

Trade Name「Bakelite」1911 Dr. Takamine got the license for

domestic production.Sankyo company(currently Daiichi-Sankyo Co.,

Ltd) started a trial production of phenol. 1955 Sumitomo Bakelite Co., Ltd was found.

L.H Bäekeland[1863～1944]

★The world first’s plastic is Phenolic resin.

What is Bakelite?Phenolic resin is synthesized by phenol and formalin.

Dr. Takamine[1854～1922]

Encapsulation material for semiconductors

Molded products for automobiles

Medicine packaging

History

Document No.1738243


0

200

400

600

800

1000

1200

1400

0 2 4 6 8 10 12 14 16

PMIC/RF/WiFi AP/BB

I/O Count(Ball)3D

Package Size / Number of component

Embedded SiP

3D IC TSV

Fan-Out WLP

2.5D interposer

Exposed PoP Coreless ETS-PoP

Fan-Out PoP

Fan-Out SiP

MeP-PoP(HB-PoP)

Increase data transfer amount Increase I/O count Fine L/S RDL technology toachieve high speed data transfer

No change I/O countAccelerate modularizationwith component

FC SiPWB SiP

Evolution of Packaging and Trend of Advanced PKG

Sophisticated SiPs coming…

Document No.1738244


Sensitive Device ProtectionEMI Shielding

Solder Bump Protection

Multi Layer Thinner Substrate

Shallow LASER Marking

High Thermal Conductivity

SiPs : Several Technology Requirements

Narrow Gap Filling

SiP

Document No.1738245


Buffer coating / PID by

SUMIRESIN EXCEL® CRCWW No.1 share for buffer coatingHigh speed & High resolution

Encapsulation by SUMIKON® EME

WW No.1 shareBroad lineup to cover all PKG typeand molding method

Wafer Dicing using

SUMILITE® FSLSpecial technology for ESD less filmFine pattern formability

Die bonding by

SUMIRESIN EXCEL® CRMWW No.2 sharebroad lineup for various PKG

LαZ®Interposer building by(Prepreg, Core and SR are available)

Low CTE, Low dimension changeHigh stiffness, R to R support.

Sumitomo Bakelite can support from Wafer to PKG

easy SMT process handling by

SUMILITE® CSL

Special technology for ESD less cover tape

Sumitomo Bakelite ‘‘One Stop Solution’’

http://www.sumibe.co.jp/product/film-sheets/carrier-tape/sumilite-csl/index.html

Document No.1738246


Contents

Technology Development for SiP - Narrow Gap Filling- Solder Bump Protection - Warpage Control- Shallow LASER Marking- Fragile Component Protection - EMI Shielding- High Density Component Arrangement

New Trend - FOWLP SiP- Low Df Material for 5G

Document No.1738247


Contents



Document No.1738248


Fille

r D

istr

ibu

tio

n

Filler Size

Large filler stuck and cause

incomplete filling.

Apply the filler with top cut

FillerTop cut

Narrow Gap Filling

Side view

Bottomview

Si

Filler richResin rich

Filler in Molding Compound

Document No.1738249


Test die with Cu pillarDie size : 10mm x 10mm

Pillar pitch : 200um

Pillar height : 5um

Pillar diameter : 100um

Die bonding on substrate at 4 corners of Cu die

Molding

Observe filling performance

Take out from substrate

Bad fillingGood filling

EMC

Substrate

Test die

5um

Narrow Gap Filling

Document No.17382410


EMC with5um sieved

Filling : OK

EMC with12um sieved

Filling : NG

5um gap filling

Narrow Gap Filling

Fine filler top cut is important for narrow gap filling



Newtonian fluidViscosity does not depend on the shear rate

Vis

cosi

ty

Shear rate

Pseudoplastic fluid

Dilatant fluid

Newtonian fluid

Pseudoplastic fluid Newtonian fluid

Unbalanced flow Balanced flow

Narrow Gap Filling



Grade STD Sample 1

Filler Treatment

nonSurface

Modification

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

1.E+07

0.1 1 10 100 1000

Vis

cosi

ty [

Pa・

s]

Rotation [rpm]

7FE076

7FE078

Sample 1

STD

SamplePlate

Torque

Narrow Gap Filling

Sample will be ready soon.

Study of filler surface modification in EMC

Newtonian fluid

Filler with surface modification show Newtonian-fluid like behavior.

< Filling Test Result : FCCSP >- Die size 10 x 10mm- Bump height 35um x Pitch 150um

P-lapping to check void

STD Sample 1

No void



Contents






Solder bump in SiP is larger than micro-bump in FCCSP.

Several factors need to be considered for protection from damage.

Some examples of study are introduced as following pages.



<Test PKG>FCCSP in SiP

<Test condition>Reflow: 260degCx3Filler

change Random flash occurred by Grade B.

After MSL & reflow x 3Micro void

Random flash was improved by Grade A.

There are some void around bumps after mold.

Smaller Filler is better.

EMC Information

EMC Grade A Grade B

Sieving size 32um 20um

Ave filler size 10um 5umMoisture in void explodes and leads delamination and solder flash.

Solder Flash


Solder extrusion after reflow : Effect of Filler Size in EMC



0

20

40

60

80

100

0 500 1000 1500 2000

Sold

er F

lash

Are

a in

dex

[-

]

Modulus at 260’C (MPa)

Grade C Grade D Grade E

Resin Type C D E

Modulus at 260’C 2000 1000 500

Flash area 100 30 0

Low Modulus (=stress) is important.

<Grade C after reflow> <Grade E after reflow>

Solder Flash No flashSolder bump(200um)


Solder extrusion after reflow : Effect of Modulus at 260’C of EMC

EMC Information



Contents





Volume EMC < PCB EMC > PCB

PKG structure

WarpageDirection

RT

260degC

EMC property dierection High CTE / Modulus Low CTE / Low Modulus

cry shape

cry shape

smile shape

smile shape

EMC with high / low CTE & Modulus is required to control warpage.

For Ultra thin PCB, substrate with carrier is needed to avoid bending.

Warpage Control

Ultra thin PCB



0

50

100

150

200

250

0 100 200 300

TMA

[u

m]

Temp. [degC]

Silica

New filler

Warpage is improved

TMA

187ppm

79ppm

26ppm

18ppm

63ppm

α phase（RT） β phase（HT）

phase transition (reversible)

Ca. 230degC

Phase transition

PKG Size mm 14x14

Chip size mm 10x10x0.06

Bump pitch um 200

Bump Height um 70

Mold Thickness um 130

Subs. thickness*1 um 280

*1) Substrate : Low CTE type

Warpage Test by Thinner PKG

44 37

-132

-87-150

-100

-50

0

50

100

G330SA w/ new filler

War

pag

e [

um

]

RT

HT

Warpage Control : EMC

EMC with high CTENew filler can achieve high CTE

EMC

w/ Silica

EMC

w/ New filler



Negative CTE filler can decrease CTE.But poor flowability due to flake shape.

Spherical shape under development.

TMA

Grade (Ref) Leg 1

Filler type - silicaSilica

+Negative

General Property

Spiral Flow cm >260 70

Gel Time sec 45 40

CTE1 / 2 ppm/’C 13 / 43 9 / 38

Tg ‘C 145 145

F. Modulus (25’C) MPa 19000 22000

F. Modulus (260’C) MPa 700 1000

0

20

40

60

80

100

0 50 100 150 200 250

TMA

(u

m)

Temp. (deg.C)

Ref (Silica)

Leg2-1 (+Negative)Leg1

Warpage Control : EMC

EMC with low CTENegative CTE filler under development



Adhesion of photo sensitive area lowered

Laminate

Imaging(Photo sensitive only unit area)

Attaching strip substrate

Photo sensitive temporary bonding film

Carrier board

Strip substrate

Die mount

Molding

Dicing to Units

Process Image of photo sensitive Temporary Bonding Film (TBF)80umt

50umt

Substrate Bending

Warpage Control : Substrate

Thinner substrate need carrier board to avoid bending. Temporary Bonding Film for carrier is required.



Substrate (100umt)

TBF (10umt)

SUS board (100umt)

SEM Image of Substrate SurfaceProcess Result

Die mount(260 deg.C reflow)

Good(non-Delamination)

EMC Molding(175deg.C/5h)

Good(non-Delamination)

Detach Good

No Residue on Substrate Surface

Non-Exposure Area

Exposure Area

Dicing Substrate and Detaching

Warpage Control (Thinner Substrate)

Detaching ability (Subs)

We have been developing film for matching this process.



Contents





Shallow depth after LASER marking

Thinner gap on tall component


Study of EMC

Coloring agent STDNew

Additive

Property

Spiral Flow cm 135 150

Gel Time sec 59 68

CTE1 ppm 11 11

CTE2 ppm 43 44

Tg ‘C 130 135

F. Modulus (25’C) N/mm2 20000 20500

F. Modulus (260’C) N/mm2 500 610

Specific Gravity - 1.98 1.98

Shrinkage % 0.17 0.18

Note: The value on this table is typical one.

EMC with new additive to achieve good visibility and lower depth.



Marking Condition 270mm/s, 1.2A 400mm/s, 1.2A 300mm/s, 1.0A

EMC w/ STDdepth

QR recognition25um

Hard13um

hard8um

hard

EMC w/ New Additivedepth

QR recognition20um

hard10um

hard5um

easy

EMC w/ New Additive* after sputter depth

QR recognition20um

Easy10um

easy5umeasy

Laser-making Equipment：SFL263 (EO Technics), Wavelength：1064nm, Max Power：40W

* hard / easy : recognition test by phone camera (10pcs). “hard” needs to raise the contrast by light.

LASER Marking Depth and QR Cord Recognition Test

New Additive achieve shallow depth (5um) and good recognition due to higher contrast.




Contents





Fragile Component Protection

Low pressure molding as technical challenge

Panel size Machine size

100mm x 300mm Max 4580mm (Wide)

540mm x 660mm Max 5060mm (Wide)

1000mm x 1000mm ? Max > 7000mm ?

To mold sensitive device To avoid huge molding machine

by large panel molding

SAW/BAW with hollow structure

Study of low pressure molding as following page.

Target pressure : 3 MPa



Test Vehicle- Mold thickness : 330umt

- Substrate size : 245x75x0.2mmt (2 block)

EMC Grade

Filler cut (um)

NGFP*1

(MPa)

Transfer Pressure (MPa)

3 2 1.5 1

A 20 2.0 NG NG* NG* NG*

B 12 0.9 OK* OK NG* NG

C 20 0.5 OK OK NG NG*

D 24 0.2 OK* OK OK NG

* No molding test but estimated. *1) Narrow Gap Flow Pressure at 0.5mmt

Molding Trial is supported by APIC YAMADA Corporation

Molding Information*Mold chase VCH- Machine : GTM-X VCH

- Plunger type :Resin ring type

(AYC dome)

- Mold temp. : 175’C

- Pre-heat : 0sec

- Tr. Speed : 1.2mm/s

- Vacuum : 1.1kpa

OK NG

Incomplete fill

Filling Test Result

< Next page>

Filling test by FCCSP


Further study for better filling at low pressure molding on going !



Test Vehicle

- Mold thickness : 330umt

- Substrate size : 245x75x0.2mmt (2 block)

- Die size : 5mmx5mmx0.10mmt

- Solder Bump : height 100um x Pitch 200um

- EMC : Grade-B

Filling Test Result (Void under F/C)

Tr. Pressure : 2MPa Tr. Pressure : 1MPa

No void Void

Filling under F/C until 2MPa is OK.




Contents





< Scotch tape test >Evaluation sampleAfter scotch tape test

We count number of delamination

0

5

10

15

20

0 0.5 1 1.5 2

Num

ber

of

dela

min

ation

Chemical amount

1a 2a 3a 4a

EMI Shielding

Adhesion can be improved by EMC.Additional study keep going.

Adhesion Study of EMC-Metal : EMC formulation

We studied adhesion of sputtering metal to EMC.

Test Mehod



EMI Shielding

Adhesion Study of EMC-Metal : Surface Activation

EMC

Substrate

Activation Cu plating

Cu pealing test

Cu pealing Test

2

2.5

3

3.5

4

4.5

5

without with ActivationPe

alin

g st

ren

gth

(N

/cm

)

Surface Activation also can enhance adhesion.



Contents





Die attach film (cDDF) Die attach paste

Fillet control

BLT control

Resin bleed

No fillet

No die tilt

No resin bleed

cDDF is better than die attach paste for SiP.

Narrow space for die attach material in SiP

It is very close for each unit in SiP. Control die attach material is key.

High Density Component Arrangement



＜Features of cDDF＞・ High electric conductivity(4E-4Ω.cm) ・ Good reliability for various metal surface ・ Low outgas during curing (0.1%)

Die size

1x1mm2 5x5mm2

■Process Performance~Dicing~ ~Pick Up~

No residueafter picking up

Die

DAF

Dicing Sheet

Pick up

(Die thickness:200um)

■Reliability

■Bonding controlDDF Paste

No die flyafter dicing

No fillet & bleed after die bonding

High Density Component Arrangement

Level 3 + R260x3 Pass



Contents





Example of good (small) warpage

Example of very large warpage

Stress Index of EMC (=CTE1 x E1*)(S

mal

l) W

afe

r w

arp

age

(Lar

ge)

(Small) (Large)

12inch

12inch

30mm warpage

3mm warpage

* E1: Flexural modulus @25degC

FOWLP SiP

Lower stress index EMC can achieve low wafer warpage.

Key property of EMC for WLP : Warpage Control



0.0

2.0

4.0

6.0

8.0

10.0

0 100 200 300

Waf

er

war

pag

e(m

m)

Stress index @25degC

EMC-1 EMC-2 EMC-3 EMC-4 LMC

FC wt% 90 89 89 90 85

CTE1 ppm 7 9 8 7 10

E1 GPa 27 20 20 15 25

Stress index 189 180 160 105 250

EMC-4

LMC

15mmsq

10.5mm-sq

200umt

300umt

PID:7um/7um

12” wafer warpage Unit coplanarity

-100

-50

0

50

100

150

200

25

50

75

10

0

12

5

15

0

17

5

20

0

22

5

25

0

26

0

25

0

22

5

20

0

17

5

15

0

12

5

10

0

75

50

35

Un

it c

op

lan

arit

y(u

m)

Temperature (degC)

LMC

EMC-1

EMC-4

FOWLP SiP

Lower stress index EMC also show low unit warpage.



-8

-6

-4

-2

0

2

4

6

0 1 2 3 4 5

War

pag

e(m

m)

RDL layer number

■FC84% (SI=232)◆ FC90% (SI=40)

RDL

EMC

RDL

EMC

RDL: CRC-8903, 1~4 layer(1layer=7umt)

Mold thickness:450umt

Die size:10.5mm□, 350umt

RDL layer number impact on warpagedue to high CTE of RDL.

FOWLP SiP

Warpage Study of EMC-RDL

Considering EMC / RDL / PKG design is important.



Contents





Automotive Radar 5G communicationsWi Gig IOT

Utilization of milli-wave bands is increasing for high speed and large data transfer.

Low Df material at high frequency bands is required.

GSM mobile phone

1GHz 20GHz 100GHz

Microwave oven

Satellite communications

Millimeter wave communications

Micro wave communications

Quasi-millimeter

Low Df Material for 5G



Item Unit LAZ-6785KS-HGlass Cloth Style #1027 #1017

Df 10GHz - 0.004 0.004Dk 10GHz - 3.6 3.6

RC % 71 77

Tg DMA deg.C 235 235

CTE (XY) a1 ppm/C 12 15

Tensile Modulus 25C GPa 18 14

260C GPa 9 6

Substrate Material

ME

[email protected] [email protected]

LAZ-6785KS-H#1027_35um

No smear No smear

*SW : [email protected], RE : [email protected]

<Process-ability of Laser BVH drill process>


Substrate with low Df is ready.



Grade Ref New EMC

Resin Type - Standard Low Df Type

General property

Df @ 60GHz 0.009 0.004

Dk @ 60GHz 3.8 3.7

Spiral Flow cm 195 150

Gel Time sec 50 30

Alpha 1 / 2 x10-5/degC 1.0 / 4.0 1.0 / 4.0

Tg degC 150 140

F. Strength@RT N/mm2 140 100

@260 N/mm2 15 10

F. Modulus@RT N/mm2 22000 25000

@260 N/mm2 600 300

Water absorption % 0.20 0.20

Mold shrinkage % 0.12 0.10Note : These values are not guaranteed, just typical one.

Substrate Material : EMC


EMC sample with Low Df is ready.



Summary

We keep exploring new material & technology

to achieve your innovative product.

Document No.173824

【Disclaimer】

The information presented in this document is provided in good faith, but no warranty is given or is to be implied regarding its accuracy or relevance to any particular application. Users must satisfy themselves regarding the suitability and safety of their use of the information and products in the application concerned. Nothing herein is to be construed as advising or authorizing the use of any invention covered by existing patents without license from the owners thereof.

【 Copyright 】

All copyrights in or related to this document belong to Sumitomo Bakelite Co., Ltd. or its group companies, unless otherwise indicated. This document and its contents may not used (including reproduced, altered, distributed or transmitted) without prior consent of Sumitomo Bakelite Co., Ltd. or its group companies.

【 Company Names】

On this document, the name of the companies may be represented in simplified forms by omitting "Company Limited", "Inc." and/or other legal entity identifications.

advanced packaging materials and · 2020. 2. 22. · - vacuum : 1.1kpa ok ng incomplete fill...

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