30v dual n-channel mosfet · 30v dual n-channel mosfet gsfn9810 q1 q2 vdss 30v 30v rds(on)(max.)...
Post on 27-Jul-2020
45 Views
Preview:
TRANSCRIPT
Main Product Characteristics
S1
Schematic Diagram
Features and Benefits
Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Fast switching and reverse body recovery
Advanced MOSFET process te chnology
Ideal for high efficiency switched mode power suppliesLow on-resistance with low gate charge
1/8
DFN3X3Asymmetric
Dual Pin
Description The GSFN9810 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.
30V Dual N-Channel MOSFETGSFN9810
Q1 Q2
VDSS 30V 30V
RDS(ON)(Max.) 10.5mΩ 10.5mΩ
ID 19.5A 19.5A D1 D1
G2 S2
G1 D1
S2 S2
D1
S2 S2 S2 G2
S1/D2 G1 G2
D1 D2
S2
Parameter Symbol Q1 Q2 Unit
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±20 ±20 V
Drain Current – Continuous (TC=25°C) 19.5 19.5 A
Drain Current – Continuous (TC=100°C) 12.3 12.3 A
Drain Current – Continuous (TA=25°C) 10.8 10.8 A
Drain Current – Continuous (TA=100°C) 6.8 6.8 A
Drain Current – Pulsed1 IDM 78 78 A
Single Pulse Avalanche Energy2 EAS 13 13 mJ
Single Pulse Avalanche Current2 IAS 16 16 A
Power Dissipation (TC=25°C) 27 27 W
Power Dissipation – Derate above 25°C 0.01 0.01 W/°C
Storage Temperature Range TSTG °C
Operating Junction Temperature Range TJ °C
-55 to +150
-55 to +150
ID
PD
D1 D1 D1 G1
Electrical Characteristics (TJ=25°C unless otherwise specified)
2/8
30V Dual N-Channel MOSFETGSFN9810
Parameter Symbol Min. Typ. Max. Unit
Q1 30 --- ---
Q2 30 --- ---
Q1 --- 0.04 ---
Q2 --- 0.04 ---
Q1 --- --- 1
Q2 --- --- 1
Q1 --- --- 10
Q2 --- --- 10
Q1 --- --- ±100
Q2 --- --- ±100
Q1 --- 8.5 10.5
Q2 --- 8.5 10.5
Q1 --- 11 14
Q2 --- 11 14
Q1 1.2 1.6 2.5
Q2 1.2 1.6 2.5
Q1 --- -4 ---
Q2 --- -4 ---
Q1 --- 12 ---
Q2 --- 12 ---
V
IGSS VGS=±20V, VDS=0V
VDS=5V, ID=5A
VGS=10V, ID=10A
VGS=4.5V, ID=5A
mV/°C
Forward Transconductance gfs
△VGS(th)
S
Static Drain-Source On-Resistance3 RDS(ON) mΩ
V/°C
VGS(th) Temperature Coefficient
Gate Threshold Voltage VGS(th) V
VGS=VDS, ID =250uA
IDSS
VDS=30V, VGS=0V, TJ=25°C
VDS=24V, VGS=0V, TJ=125°C
Gate-Source Leakage Current
uA
nA
Conditions
Static State Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA
BVDSS Temperature Coefficient △BVDSS/ △TJ Reference to 25°C, ID=1mA
Drain-Source Leakage Current
Thermal Characteristics
Parameter Typ. Max. UnitQ1 --- 62 °C/WQ2 --- 62 °C/WQ1 --- 4.6 °C/WQ2 --- 4.6 °C/W
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
RθJA
RθJC
3/8
30V Dual N-Channel MOSFETGSFN9810
Parameter Symbol Min. Typ. Max. Unit
Q1 --- 15.6 31
Q2 --- 15.6 31
Q1 --- 2.3 5
Q2 --- 2.3 5
Q1 --- 3 6
Q2 --- 3 6
Q1 --- 3.8 7
Q2 --- 3.8 7
Q1 --- 10 19
Q2 --- 10 19
Q1 --- 22 42
Q2 --- 22 42
Q1 --- 6.6 13
Q2 --- 6.6 13
Q1 --- 620 900
Q2 --- 620 900
Q1 --- 85 125
Q2 --- 85 125
Q1 --- 60 90
Q2 --- 60 90
Q1 --- 2.8 5.6
Q2 --- 2.8 5.6
Q1 --- --- 19.5
Q2 --- --- 19.5
Q1 --- --- 39
Q2 --- --- 39
Q1 --- --- 1
Q2 --- --- 1Diode Forward Voltage3 VSD VGS=0V, IS=1A, TJ=25°C V
Drain-Source Diode Characteristics
Continuous Source Current
Pulsed Source Current3
IS
ISM
VG=VD=0V, Force Current A
VDS=25V, VGS=0V, F=1MHz pF
Gate resistance Rg VGS=0V, VDS=0V, F=1MHz Ω
Input Capacitance Ciss
Output Capacitance Coss
Reverse Transfer Capacitance Crss
Turn-Off Delay Time3, 4 Td(off)
Fall Time3, 4 Tf
VDD=15V, VGS=10V, RG=6Ω, ID=1A
nS
VDS=15V, VGS=10V, ID=5A nC
Turn-On Delay Time3, 4 Td(on)
Rise Time3, 4 Tr
Total Gate Charge3, 4 Qg
Gate-Source Charge3, 4 Qgs
Gate-Drain Charge3, 4 Qgd
Dynamic Characteristics
Conditions
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. VDD=25V, VGS=10V, L=0.1mH, Q1: IAS=16A, Q2: IAS=42A, RG=25, Starting TJ=25°C.3. The data tested by pulsed, pulse width ≦ 300 uS, duty cycle ≦ 2 %.
4. Essentially independent of operating temperature.
Electrical Characteristics (TJ=25°C unless otherwise specified)
4/8
Typical Electrical and Thermal Characteristic Curves
30V Dual N-Channel MOSFETGSFN9810
TC , Case Temperature (°C) Fig.1 Q1 Continuous Drain Current vs. TC
TJ , Junction Temperature (°C) Fig.3 Q1 Normalized Vth vs. TJ
I D ,
Con
tinuo
us D
rain
Cur
rent
(A)
Nor
mal
ized
On
Res
ista
nce
(m
) TJ , Junction Temperature (°C)
Fig.2 Q1 Normalized RDS(ON) vs. TJ
Nor
mal
ized
Gat
e Th
resh
old
Vol
tage
(V)
VG
S , G
ate
to S
ourc
e V
olta
ge (V
)
Qg , Gate Charge (nC) Fig.4 Q1 Gate Char ge Waveform
Nor
mal
ized
The
rmal
Res
pons
e (R
θJC)
I D ,
Con
tinuo
us D
rain
Cur
rent
(A)
VDS , Drain to Source Voltage (V) Fig.6 Q1 Maximum Safe Operation Area
Square Wave Pulse Duration (S) Fig.5 Q1 Normalized Transient Impedance
V DG
D
D
e A
e
Re
e
e e e e
D e e e
RD ( )
e
e e
e
e
e e
e e e V
e e
e
e R
ee
R
D
D
e
A
e e e D I
D D e e
5 8
V DG
D
90
10A
DDD
EA12 L A
2 D
D DD
6 8
30V Dual N-Channel MOSFETGSFN9810
Package Outline Dimensions DFN3X3 Asymmetric Dual Pin
Symbol Dimensions In Millimeters
Min Typ Max A 0.70 0.75 0.80 A1 0.00 0.02 0.05 A3 0.20REF b 0.35 0.40 0.45 D 2.90 3.00 3.10 E 2.90 3.00 3.10
D2 2.20 2.30 2.40 E2 0.40 0.50 0.60 D3 2.20 2.30 2.40 E3 0.85 0.95 1.05 e 0.55 0.65 0.75
K1 0.15 0.25 0.35 K2 0.15 0.25 0.35 L 0.30 0.35 0.40 M 0.25 0.35 0.45 R 0.125REF
7/8
8/8www.goodarksemi.com Doc.USGSFN9810xSP2.0
30V Dual N-Channel MOSFETGSFN9810
Tape & Reel Information
Recommend Footprint Information
top related