amorphous and polycrystalline - gbv · materialsresearchsociety symposiumproceedingsvolume910...
TRANSCRIPT
Materials Research Society
Symposium Proceedings Volume 910
Amorphous and PolycrystallineThin-Film Silicon Science and
Technology—2006
Symposium held April 18-21, 2006, San Francisco, California, U.S.A.
EDITORS:
Sigurd WagnerPrinceton University
Princeton, New Jersey, U.S.A.
Virginia ChuINESC Microsistcmas c Nanotccnologias
Ltsboa, Portugal
Harry A. Atwater, Jr.
California Institute ofTechnology
Pasadena, California, U.S.A.
Kenji YamamotoKaneka Corporation
Shiga, Japan
Hsiao-Wen ZanNational Chiao Tung University
Hsinchu, Taiwan, R.O.C.
IMIRIS
Materials Research SocietyWarrendale, Pennsylvania
TECHNISCHE
INFORMATIONSBIBLIOTHEK
UNIVERSITATSBIBLIOTHEK
HANNOVER
CONTENTS
Preface xxi
Materials Research Society Symposium Proceedings xxiii
TRANSPORTANDELECTRONIC
PROPERTIES
* Time-Resolved Photoconductivity as a Probe of Carrier
Transport in Microcrystalline Silicon 3
Steve Reynolds
Simulation of Realistic Core-Shell Silicon Nanowires... 15
Rana Biswas and Bicai Pan
Electronic Characterization and Light-Induced Degradationin nc-Si:II Solar Cells 21
P.G. Hugger, Shouvik Datta, P.T. Erslev, Guozhen Yue,Gaulam Ganguly, Baojie Yan, Jeffrey Yang, Subhendu Guha,and J.D. Cohen
METASTABILITY
* Metastability in Hydrogenated Nanocrystalline Silicon
Solar Cells 29
Guozhen Yue, Baojie Yan, Gaulam Ganguly,Jeffrey Yang, and Subhendu Guha
Characterization ofthe Evolution in Metastable Defects
Created by Recombination of Carriers Generated byPhoto-Generation and Injection in p-i-n a-Si:H Solar Cells 41
Jingdong Deng, Benjamin Ross, Mathew Albert,
Robert Collins, and Christopher Wronski
The Effect of Oxygen Contamination on the Electronic
Properties of Hot-Wire CVD Amorphous Silicon
Germanium Alloys 47
Shouvik Datta, J. David Cohen, Steve L. Golledge,
Yueqin Xu, A.H. Mahan, James R. Doyle, and
Howard M. Branz
*Invited Paper
v
GROWTHMECHANISMS
Surface Roughening Transition in Sii„xGex:H Thin Films 55
Nikolas J. Podraza, Christopher R. Wronski,
Mark W. Horn, and Robert W. Collins
Reaction Mechanism for Deposition of Silicon Nitride by
Hot-Wire CVD With Ultra High Deposition Rate (>7 nm/s) 61
Vasco Verlaan, Zomer Silvester Houweling,Karine van der Werf, Hanno D. Goldbach, and
Ruud Schropp
GROWTH TECHNIQUESAND
INTERFA CE STUDIES
* Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H
Films Deposited at Low Substrate Temperatures 69
Shinsuke Miyajima, Akira Yamada, and Makolo Konagai
Dual-Chamber Plasma Co-Deposition of Nanoparticlesin Amorphous Silicon Thin Films 79
C. Anderson, C. Blackwell, J. Deneen, C.B. Carter,J. Kakalios, and U. Kortshagen
Interface Study of Nanocrystalline Silicon and CrystallineSilicon Using Microwave Photoconductivity Decay ,
85
Mahdi Farrokh Baroughi and Siva Sivoththaman
Orientation-Dependent Dewetting of Patterned Thin Si
FilmonSiOj 91
E. Dornel, J-C. Barbe\ J. Eymery, and F. de Cr^cy
THEORY OFSTRUCTURE
AND TRANSPORT
Research-on Amorphous Silicon Thin-Film Structure
and Growth Processes Using Nonlinear Dynamics Methods 99
Nikolay Viktorovich Bodyagin, Sergey Pavlovich Vikhrov,Tatiana Gennadievna Larina, and Stanislav Mursalovich Mursalov
*Invited Paper
vi
Molecular Dynamic Computer Simulation of Thin
Film's Heat Dissipation Rate 105
Ya-Yun Cheng, Horng-Ming Hsieh, and
Cheng-Chung Lee
Thermal Conductivity and Natural Cooling Rate of
Excimer-Laser Annealed Si: A Molecular DynamicsStudy Ill
Byoung Min Lee, Baek Seok Seong, Hong Koo Baik,Shinji Muneloh, and Teruaki Motooka
Phononic Amorphous Silicon: Theory, Material, and
Devices 117
Samrat Chawda, Jose Mawyin, Harv Mahan,Charles Fortmann, and Gary Halada
A Second Order Accurate Finite Difference Scheme
for the Heat Equation on Irregular Domains and
Adaptive Grids 123
Han Chen, Chohong Min, and Frederic Gibou
MEASUREMENTS OFFILMAND
INTERFACE PROPERTIES
Environment of Er Doped in a-Si:H and Its Relation With
Photoluminescence Spectra 131
Minoru Kumeda, Yoshitaka Sekizawa, Akiharu Morimoto,
and Tatsuo Shimizu
Photocarrier Radiometric Lifetime Measurements of
Intrinsic Amorphous-Crystalline Silicon Heterostructure 137
Keith R. Leong, Andreas Mandelis, Nazir P. Kherani,and Stefan Zukolynski
Microstructure Characterization of Amorphous Silicon-
Nitride Films by Effusion Measurements 143
W. Beyer and H.F.VV. Dekkers
Quantization of Crack Speeds in Dynamic Fracture of
Silicon: Multiparadigm ReaxFF Modeling 149
Harvey Tang, Janet Rye, Markus J. Buehler,Adri van Duin, and William A. Goddard III
vn
AMORPHOUS SILICON GROWTH
Effect of Hydrogen Dilution on Structure and Electronic
Properties of Ge:H and GcYSii.Y Films Deposited by Low
Frequency Plasma 157
A. Kosarev, L. Sanchez, A. Torres, T. Felter, A. Ilinskii,Y. Kudrjavtsev, and R. Asomoza
Thin Films of GeC Deposited Using a Unique Hollow Cathode
Sputtering Technique 163
James L. Huguenin-Love, Rodney J. Soukup, Natale J. Ianno,Jason S. Schrader, and Vikram L. Dalai
The Influence of Deposition Conditions on the Electronic
Properties of a-Si;H Prepared in Expanding Thermal
Plasma 169
Monica Brinza and Guy J. Adriaenssens
Grain Nucleation and Grain Growth During Crystallizationof HWCVD a~Si:II Films 175
S.P. Ahrenkiel, B. Roy, A.H. Mahan, and D.S. Ginley
The Influence of Thermophoresis Effects During Depositionof Hydrogenated Amorphous Silicon Thin Films With
Nanocrystalline Silicon Inclusions 181
C. Blackwell, C. Anderson, J. Deneen, C.B. Carter,
U. Kortshagen, and J. Kakalios
NANOCRYSTALLINEAND
MICROCRYSTALLINE SILICON FILMS
Incubation Layer-Free Nanocrystalline-Si Thin Film
Fabricated by ICP-CVD at 150°C for Flexible Electronics 189
Sang-Myeon Han, Young-Kwan Cha, Joong-Hyun Park,
Sang-Geun Park, YoungSoo Park, and Min-Koo Han
Role of Hydrogen in the Grain Growth in MicrocrystallineSilicon Films 195
Gyu-Hyun Lee and Jong-Hwan Yoon
Influence ofAnnealing on Crystallinity and Conductivityof p-type Nanocrystalline Si Films 201
Durga P. Panda and Vikram Dalai
vni
The Influence of the Hot Wire Temperature on the
Crystallization of jic-Si:H Films Prepared by Hot
Wire-Assisted-ECR-CVD 207
Ying Li, Zhi Zhong Li, Guang Hua Chen, andMinoru Kumeda
Effects of HWCVD-Deposited Seed Layers on
Hydrogenated Microcrystalline Silicon Films
on Glass Substrates 213
Michael M. Adachi, Wing Fai Lydia Tse,
Garnet Cluff, Karen L. Kavanagh, and
Karim S. Karim
Detection ofSiH3 Radicals and Cluster Formation in a
Highly H2 Diluted SiH4 VHF Plasma by Means of Time
Resolved Cavity Ring Down Spectroscopy 219
Takehiko Nagai, Arno H.M. Smets, and Michio Kondo
Experimental Studies of Photoluminescence in Mn-Ion
Implanted Silicon Rich Oxide Thin Film 225
Wei Pan, R.G. Dunn, M.S. Carroll, and Y.Q. Wang
Nucleation and Growth of Quasicrystalline Silicon Thin
Films on Glass Substrate Synthesized by Ceramics Hot
Wire Chemical Vapor Deposition 231
Abdul Rafik Middya, Jian-Jun Liang, and Kartik Ghosh
DEFECTSAND METASTABILITY
Relationship Between Phase Shift, Square-Wave Responseand Density of States in Modulated Photocurrent Spectroscopy 239
Steve Reynolds and Charlie Main
Thermally-Stimulated Currents in Thin-Film Semiconductors:
Analysis and Modeling 245
Charles Main, Nacera Souffi, Steve Reynolds,Zdravka Aneva, Rudi Bruggemann, and Mervyn Rose
The Concentration of (SiH2),, Sites in Low and High Defect
Density a-Si:H 251
D.C. Bobela, T. Su, P.C. Taylor, A. Madan, and G. Ganguly
ix
/(
OPTICAL PROPERTIES
Dielectric Functions of a-Sii.xGex:H versus Ge Content,
Temperature, and Processing: Advances in OpticalFunction Parameterization 259
Nikolas J. Podraza, Christopher R. Wronski,
Mark W. Horn, and Robert W. Collins
OTHER MATERIALS
Role of Surface on the Persistent Photoconductivity in
Porous Silicon and Boron Doped a-Si:H* 267
S.C. Agarwal, Abhishek Kumar, and N.P. Mandal
Pulsed Laser Deposition of Boron Doped Si70Ge3o 273
Sherif Sedky, Ibrahim El Deflar, and Omar Mortagy
Blue Light Emission From PECVD Deposited Nanostructured
SiC 279
Liudmyla Ivashchenko, Andriy Vasin, Volodymyr Ivashchenko,
Mykola Ushakov, and Andriy Rusavsky
Novel Semiconducting Phase of Amorphous Carbon Nickel
Composite Films 285
Somnath Bhaltacharyya, S.J. Henley, N.P. Blanchard,and S.R.P. Silva
NANOCRYSTALLINE SILICON GROWTH
* Growth and Electronic Properties of Nanocrystalline Si 293
Vikram L. Dalai, Kamal Muthukrishnan, Satya Saripalli,Dan Stieler, and Max Noack
Numerical Simulation of Microcrystalline Silicon Growth
on Structured Substrate 303
Martin Python, Evelyne Vallat-Sauvain, Julien Bailat,
Christophe Ballif, and Arvind Shah
Fast Deposition of Highly Crystallized Microcrystalline Si
Films Utilizing a High-Density Microwave Plasma Source
for Si Thin Film Solar Cells 309
Haijun Jia, Hajime Shirai, and Michio Kondo
* Invited Paper
x
Low Temperature Fabrication of Microcrystalline Silicon
Germanium Films by RF Reactive Magnetron Sputtering 315
Isao Nakamura, Toru Ajiki, and Masao Isomura
LASER CRYSTALLIZATION
* Enlargement of Grain Size and Location Control of
Grain in Excimer-Laser Crystallization of Si Film 323
Wenchang Yeh, Dunyuan Ke, and Chunjun Zhuang
High Efficiency Crystallization of Silicon Thin Films
Using Continuous Wave Infrared Laser 329
Naoki Sano, Masato Maki, Nobuyuki Andoh, and
Toshiyuki Sameshima
The Crystallization Mechanism of Poly-Si Thin Film UsingHigh-Power Nd:YAG Laser With Gaussian Beam Profile 335
Hsiao Wen Zan, Chang Yu Huang, Kazuya Saito,Kouichi Tamagawa, Jack Chen, and Tung Jung Wu
CONTROLLED CRYSTALLIZATION
* Roughness, Impurities and Strain in Low-Temperature
Epitaxial Silicon Films Grown by Tantalum Filament
Hot-Wire Chemical Vapor Deposition 343
Charles W. Teplin, Matthew W. Page, Eugene W. Iwaniczko,
Kim M. Jones, Robert M. Ready, Bobby M. To,
Helio M, Moutinho, Qi M. Wang, and Howard M. Branz
Periodic Alignment of Silicon Dot Fabricated by LinearlyPolarized Nd:YAG Pulse Laser 353
Kensuke Nishioka and Susumu Horita
The Investigation of High Performance TFT by Thin Beam
Directional X-tallization Method 359
Chihwei Chao, Jiatien Peng, C.W. Cheng, Chunghung Chen,
Brandon A. Turk, and Bernd Burfeindt
*Invited Paper
XI
Physics of Solid-Phase Epitaxy of Hydrogcnatcd AmorphousSilicon for Thin Film Si Photovoltaics 365
Paul Stradins, Yanfa Yan, Robert Reedy, David L. Young,Charles W. Teplin, Eugene Iwaniczko, Yueqin Xu, Kirn Jones,
Glenn Teeter, A. Harv Mahan, Howard M. Branz, and Qi Wang
JOINTSESSION:
AMOLED BACKPLANEELECTRONICS
* Backplane Requirements for Active Matrix OrganicLight Emitting Diode Displays 373
Arokia Nathan, Denis Striakhilev, Reza Chaji,Shahin Ashliani, Czang-Ho Lee, Andrei Sazonov,John Robertson, and William Milne
Amorphous Silicon 2-TFT Pixel Circuits on Stainless
Steel Foils 389
Alex Z. Kallamis, I-Chun Cheng, Yongtaek Hong,and Sigurd Wagner
SENSORS
* Amorphous Silicon as an Active Material in OpticalResonators 397
Dennis Hohlfeld and Hans Zappe
Band Gap Engineering and Electrical Field Tailoring for
Voltage Controlled Spectral Sensitivity 403
M. Vieira, P. Louro, A. Fantoni, M. Fernandas,
G. Lavarcda, and C.N. Carvalho
Image Sensors Based on Thin-Film on CMOS Technology:Additional Leakage Currents due to Vertical Integrationof the a-Si:H Diodes 409
C. Miazza, N. Wyrsch, G. Choong, S. Dunand, C. Ballif,
A. Shah, Nicolas Blanc, R. Kaufmann, F. Lustenberger,D. Moraes, M. Despeisse, and P. Jarron
Role of the Oxide Layer on the Performances of a-Si:H
Schottky Structures Applied to PDS Fabrication 415
Hugo Aguas, Luis Pereira, Daniel Costa, Leandro Raniero,Elvira Fortunato, and Rodrigo Martins
*Invited Paper
xii
Un-Cooled Micro-Bolometer With Sandwiched Thermo-
Sensing Layer Based on Ge Films Deposited by Plasma 421
Andrey Kosarev, Mario Moreno, Alfonso Torres, and
Roberto Ambrosio
FLEXIBLE ELECTRONICS
Hot-Wire CVD a-Si:H TFT on Plastic Substrates 429
F. Taghibakhsh and K.S. Karim
Self-Aligned Thin Film Transistor Fabrication With an
Ultra Low Temperature Polycrystalline Silicon Process
on a Benzocyclobutene Planarized Stainless Steel Foil
Substrate 435
Jaehyun Moon, Dong-Jin Park, Choong-Heui Chung,Yong-Hae Kim, Sun Jin Yun, Jung Wook Lim, and
Jin Ho Lee
Nano-Crystalline Silicon Thin Film Transistors on PET
Substrates Using a Hydrogenation-Assisted Metal-Induced
Crystallization Technique 441
Ashkan Behnam, Saber Haji, Farshid Karbassian,Shams Mohajerzadeh, Aida Ebrahimi, Yaser Abdi,
and Michael D. Robertson
TFTSTABILITY
* Mechanisms for Defect Creation and Removal in
Hydrogenated and Deuterated Amorphous Silicon
Studied Using Thin Film Transistors 449
Andrew J. Flewitt, Shufan Lin, William I. Milne,
Ralf B. Wehrspohn, and Martin J. Powell
Defect States in Excimer-Laser Crystallized Single-GrainTFTs Studied With Isothermal Charge Deep-Level Transient
Spectroscopy461
V. Nadazdy, V. Rana, R. Ishihara, S. Lanyi, R. Durny,
J.W. Metselaar, and C.I.M. Beenakker
* Invited Paper
xm
Effect of Light Illumination on Threshold Voltage and
Sub-Threshold Slope of Amorphous Silicon Thin Film
Transistors • 467
Lihong (Heidi) Jiao, Christopher R. Wronski, and
Thomas N. Jackson
Post Deposition Ultraviolet Treatment of Silicon Nitride
Dielectric: Modeling and Experiment 473
Vladimir Zubkov, Mihaela Balseanu, Li-Qun Xia, and
Hichem M'Saad
NOVEL DEVICESAND FILMS
* Application of Thin-Film Amorphous Silicon to Chemical
Imaging 481
Tatsuo Yoshinobu, Werner Moritz, Friedhelm Finger,and Michael J. Schoening
Performance of Thin-Film a-Si:H Microresonators in
Dissipative Media ..491
Teresa Adrega, D.M.F. Prazeres, V. Chu, and
J.P. Conde
Dynamic Measurements of MEMS-Based Field Effect
Transistors Using Scanning Capacitance Microscopy 497
M.L. Anderson, R.W. Young, and C.Y. Nakakura
Combination of Metal Nano-Imprint and Excimcr Laser
Annealing for Location Control of Si Thin-Film Grain 503
Gou Nakagawa and Tanemasa Asano
METAL-INDUCED, LASER-INDUCED,AND OTHER CRYSTALLIZATION TECHNIQUES
Polysilicon Films Formed on Alumina by AluminiumInduced Crystallization of Amorphous Silicon 511
Elienne Pihan, Abdelilah Slaoui, and Claude Maurice
Epitaxial Silicon Thin Films by Low TemperatureAluminum Induced Crystallization of Amorphous Silicon.. 517
Khalil Sharif, Husam H. Abu-Safe, Hameed A. Naseem,William D. Brown, Mowafak Al-Jassim, and Ram Kishore
Invited Paper
xiv
Low Temperature Poly-Si Sputtering Deposition ThroughMetal-Induced Crystallization and Its Application 523
Hsiu-Wu Guo, Chen-Luen Shin, Joe Ketterl, andScotl Dunham
Characterization of Nickel Induced Crystallized Silicon
by Spectroscopic Ellipsometry 529
Luis Pereira, Hugo Aguas, Manfred Beckers,Rui M.S. Martins, Elvira Fortunato, and
Rodrigo Martins
Metal-Induced Nickel Silicide Nanowire Growth Mechanism
in the Solid State Reaction 535
Joondong Kim, Jong-Uk Bae, Wayne A. Anderson,
Hyun-Mi Kim, and Ki-Bum Kirn
Fabrication of Location-Controlled Silicon Crystal Grains
by Combining Excimer Laser Irradiation With Nanometer-
Sized a-Si 541
Chun-Chien Tsai, Ting-Kuo Chang, Hsiu-Hsin Chen,
Bo-Ting Chen, and Huang-Chung Cheng
Analytical Studies of the Capping Layer Effect on Aluminum
Induced Crystallization of Amorphous Silicon 547
Husam H. Abu-Safe, Abul-Khair M. Sajjadul-lslam,Hameed A. Naseem, and William D. Brown
Fabrication of Poly-Silicon Thin Films on Glass and
Flexible Substrates Using Laser Initiated Metal Induced
Crystallization of Amorphous Silicon 553
Husam H. Abu-Safe, Hameed A. Naseem, and
William D. Brown
Preparation of Large, Location-Controlled Si Grains
by Excimer Laser Crystallization of a-Si Film Sputteredatl00°C 559
M. He, E.J.J. Neihof, Y. Van Andel, H. Schellevis,
R. Ishihara, J.W. Metselaar, and C.I.M. Beenakker
Low Thermal Budget Techniques for Controlling Stress in
Sit.xGex Deposited at 210°C 565
Sherif S. Sedky, Omar Mortagy, and Ann Witvrouw
xv
Thermal and Stress Modeling for the Flash LampCrystallization ofAmorphous Silicon Films 571
Mark P. Smith, Richard A. McMahon, Keith A. Seffen,
Dieter Panknin, Matthias Voelskow, and Wolgang Skorupa
Fabrication of Crystallized Si Film Deposited on a
Polycrystalline YSZ Film/Glass Substrate at 500°C 577
Susumu Horita, Keisuke Kanazawa, Kensuke Nishioka,
Koichi Higashimine, and Mikio Koyano
Correlation Between Annealing Temperature and
Crystallinity of Si Films Prepared by Thermal Plasma
Jet Crystallization Technique 583
Hirotaka Kaku, Seiichiro Higashi, Tatsuya Okada,Hideki Murakami, and Seiichi Miyazaki
THIN FILM TRANSISTORS
Improvement of Threshold Voltage DegradationCharacteristics of a-Si:H TFT by Pre-Electrical
Bias-Aging for AMOLED Display 591
Jae-Hoon Lee, Sang-Geim Park, Kwang-Sub Shin,Min-Koo Han, Joon-Chul Goh, Jong-Moo Huh,Joonhoo Choi, and Kyuha Chung
Bias Stress Stability of Asymmetric Source-Drain a-Si:H
Thin Film Transistors 597
Kwang-Sub Shin, Jae-Hoon Lee, Won-kyu Lee,
Sang-Geun Park, and Min-Koo Han
Ambipolar Thin-Film Transistors Fabricated by PECVD
Nanocrystalline Silicon 603
Czang-Ho Lee, Andrei Sazonov, Mohammad R.E. Rad,G. Reza Chaji, and Arokia Nathan
An Asymmetric Dual Gate Poly-Si TFTs for ImprovingHot Carrier Stress Stability and Kink Effect Suppression 609
Joong Hyun Park, Woo Jin Nam, Jae Hoon Lee, and
Min Koo Han
P Channel MOSFET Devices in Nanocrystalline Silicon 615
Durga P. Panda, Max Noack, and Vikram Dalai
xvi
A Novel Self-Aligned Field Induced Drain PolycrystallineSilicon Thin Film Transistor Fabricated by Using a Selective
Side Etch Process 621
Ta-Chuan Liao, Chun-Yu Wu, Feng-Tso Chien,Chun-Chien Tsai, Hsiu-Hsin Chen, Chung-Yuan Kung,and Huang-Chung Cheng
Nanocrystalline Silicon Films Deposited by RF PECVD
for Bottom-Gate Thin-Film Transistors 627
Mohammad Reza Esmaeili Rad, Czang-Ho Lee,
Andrei Sazonov, and Arokia Nathan
SOLAR CELLS I
Boron Doped Polycrystalline Silicon Produced by
Step-by-Step XeCl Excimer Laser Crystallization 635
Rosari Saleh and Norbert H. Nickel
Thin-Film Polycrystalline-Silicon Solar Cells on Ceramic
Substrates Made by Aluminum-Induced Crystallizationand Thermal CVD 641
Ivan Gordon, Dries Van Gestel, Lode Carnel,
Kris Van Nieuwenhuysen, Guy Beaucarne, and
Jef Poortmans
Local Current Flow in Mixed-Phase Silicon Solar Cells and
Correlation to Light-Induced Open-Circuit Voltage Enhancement 647
Baojie Yan, C.-S. Jiang, H.R. Moutinho, M.M. Al-Jassim,
Jeffrey Yang, and Subhendu Guha
OTHER DEVICES
Light Filtering Properties in a-SiC:H Multilayer Structures:
A SPICE Model 655
J. Martins, M. Vieira, M. Fernandes, P. Louro,
and A. Fantoni
Silicon Etching Study in a RT-CVD Reactor With the HC1/H2
Gas Mixture 661
Nicolas Loubet, Alexandre Talbot, and Didier Dutartre
xvn
SOLAR CELLS II
* Novel Approaches of Light Management in Thin-Film
Silicon Solar Cells 669
J. Krc, M. Zeman, A. Campa, F. Smole, and M. Topic
Influence of Defect Post-Deposition Treatments on poly-SiThin-Film Solar Cells on Glass Grown by ECRCVD 681
Bjorn Rau, Jens Schneider, Erhard Conrad, and
Stefan Gall
* Production Technologies of Film Solar Cell 687
Akihiro Takano, Katsuya Tabuchi, Masayoshi Uno,
Masayuki Tanda, Takehito Wada, Makoto Shimosawa,Yasushi Sakakibara, Shinji Kiyofuji, Hironori Nishihara,Hirofumi Enomoto, and Tomoyoshi Kamoshita
SOLAR CELLS III
* Highly Efficient Microcrystalline Silicon Solar Cells DepositedFrom a Pure SiH4 Flow 701
M.N. van den Donker, B. Rech, R. Schmitz, J. Klomfass,G. Dingemans, F. Finger, L. Houben, W.M.M. Kesscls,and M.C.M. van de Sandcn
Temperature Dependence of Dark Current-VoltageCharacteristics of Hydrogenated Amorphous and
Nanocrystalline Silicon Based Solar Cells 713
Baojie Yan, Jeffrey Yang, and Subhendu Guha
High Quality Hot-Wire Microcrystalline Silicon for
Efficient Single and Multijunction n-i-p Solar Cells 719
Robert L. Stolk, Hongbo Li, Ronald H. Franken,
Karine H.M. Van der Werf, Jatindra K. Rath,and Ruud E.I. Schropp
Thin-Film Polycrystalline-Silicon Solar Cells on
High-Temperature Glass Based on Aluminum-
Induced Crystallization of Amorphous Silicon 725
Dries Van Gestel, Ivan Gordon, Lode Carnel,Linda R. Pinckney, Alexandre Mayo let,
Jan D'Haen, Guy Beaucarne, and Jef Poortmans
*Invited Paper
xviu
17.8%-Efficient Amorphous Silicon Heterojunction Solar
Cells on/>-type Silicon Wafers 731
Tihu Wang, Matt P. Page, Eugene Iwaniczko, Yueqin Xu,
Yanfa Yan, Lorenzo Roybal, Dean Levi, Russell Bauer,Howard M. Branz, and Qi Wang
Author Index 737
Subject Index 743
xix