alternative ram presented by: andrew lints...
TRANSCRIPT
AGENDA
1.Review of SRAM & DRAM as benchmarks2.MRAM (Magnetoresistive)3.TRAM (Thyristor)4.ZRAM (Zero-capacitor)5.Summary6.Questions
DYNAMIC RAM (DRAM)
Simple, low-cost, high-density, and Volatile
Consists of 1 transistor & 1 capacitor per memory cell
Digital value of cell is stored on the capacitor
As time passes, the capacitors are discharged, requiring constant refreshing (usually every <64ms) making this type of memory Dynamic.
DYNAMIC RAM (DRAM)
Due to the need to refresh each cell regularly, power consumption is fairly high
Due to the small cell size, scaling blocks to large capacity keeps speed high as shorter trace lengths keep latency down
STATIC RAM (SRAM) Volatile Typically uses 6-8 transistors Faster than DRAM Larger than DRAM Cache closer to CPU (L2/L3)
than DRAM No refresh required (less power!) Power can be less than DRAM
depending on frequency
MAGNETORESISTIVE RAM (MRAM) Non-volati le, sol id state - magnetic storage Built from two ferrous plates with an insulating layer One plate is kept charged at a constant level, the other is varied Reading occurs by sending a (small) test current through the cell (tunnel
magnetoresistance) Variety of write methods include a system similar to Core Memory (1960s)
Writes can be costly Density adds complexity & concerns
Write Operationhttp://low-powerdesign.com/article_MRAM_everspinhttp://low-powerdesign.com/article_MRAM_everspin
MRAM
h t t p : / / w w w . s c i e n c e d i r e c t . c o m / s c i e n c e / a r t i c l e / p i i / S 0 0 2 6 2 7 1 4 1 2 0 0 2 3 2 6
http://low-powerdesign.com/article_MRAM_everspin
Advertised size “pros” lead to cons Power & reliability correlate Power & size correlate
THYRISTOR RAM (TRAM) Volati le Sil icon on Insulator (SOI) pnpn thyristor 4x better density than 6T-SRAM Equal speed requires 2.5x higher density
Better active and standby power than 6T-SRAM
Fast Write with Thin Capacit ively Coupled Thyristor (TCCT-TRAM) Raises scalability concerns (high doping
precision) S and D T-RAM variants exist Compatible with FinFET and other
technologies
http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=7273751&tag=1
http://www.electronics-tutorials.ws/power/thyristor.html
ZERO-CAPACITOR RAM (ZRAM) Sil icon on Insulator (SOI) transistor body
produces capacitance in the transistor. Exploits “floating body effect” to store
information with only one transistor Eliminating the capacitor reduces on-chip
size, increasing memory density and access speed. Transistor and capacitor are essentially
stacked in the Z-plane, increasing density. Shorter trace distance decreases overall
latency despite having higher cell access time than SRAM
ZERO-CAPACITANCE RAM (Z-RAM) Speed increases over SRAM occur at larger memory block
sizes Writes occur using only gate and drain Writes occur during ON state (consumes power!) Licensed by AMD, though has not been brought into
production
COMPARISON SUMMARY
DRAM SRAM MRAM TRAM ZRAM Flash
Refresh Required Yes No No Varies Yes No
Density High 1T + 1C
Low6T
High~2T
High~3T
Very High1T
High1T
Volatile Yes Yes No Yes Yes No
Speed High Very High High High / Very High High / Very High Very Low
Scalability High Low Varies Varies / High High High
Power Less More Much Less Varies / Less More Much More
Cost Less More More More No Production (AMD) Much Less
SUMMARY Design is the pursuit of the “Holy Grai l” No one design fi ts every ideal , so design trade-of fs are required Key parameters Speed (Read & Write!) Power Reliability (Accurate read, write & maintenance of value) Volatility Die Size & Density Scalability Cache Level (on, off chip?)
Watch for the 3D stacked RAM project group!
WORKS CITED h t t p : / / i e e e x p l o r e . i e e e . o r g / d o c u m e n t / 4 6 5 5 4 0 9 / ? a r n u m b e r = 4 6 5 5 4 0 9 ( Z R A M ) h t t p : / / w w w . h o t c h i p s . o r g / w p - c o n t e n t / u p l o a d s / h c _ a r c h i v e s / h c 1 9 / 3 _ T u e s / H C 1 9 . 0 5 / H C 1 9 . 0 5 . 0 2 . p d f
( T R A M ) h t t p : / / i e e e x p l o r e . i e e e . o r g / s t a m p / s t a m p . j s p ? a r n u m b e r = 7 2 7 3 7 5 1 ( T R A M ) h t t p : / / n v e . c o m / D o w n l o a d s / m r a m . p d f ( M R A M ) h t t p : / / l o w - p o w e r d e s i g n . c o m / a r t i c l e _ M R A M _ e v e r s p i n ( M R A M ) h t t p : / / w w w . s c i e n c e d i r e c t . c o m / s c i e n c e / a r t i c l e / p i i / S 0 0 2 6 2 7 1 4 1 2 0 0 2 3 2 6 ( M R A M ) h t t p : / / w w w . e m b e d d e d . c o m / d e s i g n / r e a l - t i m e - a n d - p e r f o r m a n c e / 4 0 2 6 0 0 0 / T h e - f u t u r e - o f - s c a l a b l e - S T T -
R A M - a s - a - u n i v e r s a l - e m b e d d e d - m e m o r y ( M R A M f o c u s , o t h e r s m e n t i o n e d / b e n c h m a r k e d ) h t t p : / / w w w . d i g i t i m e s . c o m / b i t s _ c h i p s / a 2 0 0 6 0 3 2 8 P R 2 0 2 . h t m l ( Z R A M ) h t t p : / / s e a r c h s o l i d s t a t e s t o r a g e . t e c h t a r g e t . c o m / a n s w e r / C o m p a r i n g - p e r f o r m a n c e - a n d - c o s t - o f - D R A M - v s -
N A N D ( F l a s h / D R A M ) h t t p : / / h e x u s . n e t / t e c h / n e w s / r a m / 9 8 0 3 5 - k i l o p a s s - d r a m - u s e s - v l t - t e c h - e l i m i n a t e - r e f r e s h - r e q u i r e m e n t /
( D R A M ) h t t p : / / w w w . d i g i t i m e s . c o m / b i t s _ c h i p s / a 2 0 0 6 0 3 2 8 P R 2 0 2 . h t m l ( Z R A M ) L e c t u r e b y D r . S h a a b a n ( h t t p : / / m e s e e c . c e . r i t . e d u / c m p e 5 5 0 - f a l l 2 0 1 6 / 5 5 0 - 1 1 - 1 4 - 2 0 1 6 . p d f ) ( S R A M &
D R A M ) h t t p : / / w w w . d i f f e n . c o m / d i f f e r e n c e / D y n a m i c _ r a n d o m - a c c e s s _ m e m o r y _ v s _ S t a t i c _ r a n d o m -
a c c e s s _ m e m o r y # P o w e r _ C o n s u m p t i o n ( D & S R A M ) h t t p s : / / p d f s . s e m a n t i c s c h o l a r . o r g / 7 e 4 1 / 2 e d 8 8 b b 7 8 5 5 6 0 0 a 6 3 f e 7 c 5 b 9 1 a f 7 b 1 6 1 0 7 2 6 . p d f ( S R A M )