ald 810027
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2014 Advanced Linear Devices, Inc., Vers. 2.0 www.aldinc.com 1 of 6
e EPADTM
N A B L
E D
E
ADVANCEDLINEARDEVICES, INC.
GENERAL DESCRIPTION
The ALD810027/ALD910027 are members of the ALD8100xx(quad) and ALD9100xx (dual) family of Supercapacitor Auto Bal-ancing MOSFETs, or SAB MOSFETs. SAB MOSFETs are builtwith production proven EPAD technology and are designed to ad-dress voltage and leakage-current balancing of supercapacitorsconnected in series. Supercapacitors, also known as ultracapacitorsor supercaps, connected in series can be leakage-current balancedby using a combination of one or more devices connected acrosseach supercapacitor stack to prevent over-voltages.
The ALD810027 offers a set of unique, precise operating voltageand current characteristics for each of four SAB MOSFET devices,as shown in its Operating Electrical Characteristics table. It can beused to balance up to four supercapacitors connected in series.The ALD910027 has its own set of unique precision Operating Elec-trical Characteristics for each of its two SAB MOSFET devices,suitable for up to two series-connected supercapacitors.
Each SAB MOSFET features a precision gate threshold voltage inthe V t mode, which is 2.70V when the gate-drain source terminals(VGS = V DS ) are connected together at a drain-source current ofIDS(ON) = 1 A. In this mode, input voltage V IN = VGS = VDS. Dif-ferent V IN produces an Output Current I OUT = IDS(ON) character-istic and results in an effective variable resistor that varies in valueexponentially with V IN. This V IN, when connected across eachsupercapacitor in a series, balances each supercapacitor to withinits voltage and current limits.
When V IN = 2.70V is applied to an ALD810027/ALD910027, itsIOUT is 1 A. For a 100mV increase in V IN, to 2.80V, I OUT increasesby about tenfold. For an additional increase in V IN to 2.92V for theALD910027 (2.94V for the ALD810027), I OUT increases one hun-dredfold, to 100 A. Conversely, for a 100mV decrease in V IN to2.60V, I OUT decreases to one tenth of its previous value, to 0.1 A.Another 100mV decrease in input voltage would reduce I OUT to0.01 A. Hence, when an ALD810027/ALD910027 SAB MOSFETis connected across a supercapacitor that charges to less than2.50V, it would dissipate essentially no power.
(Continued on next page)
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB ) MOSFET ARRAY
ALD810027/ALD910027
FEATURES & BENEFITS
Simple and economical to use Precision factory trimmed Automatically regulates and balances leakage currents Effective for supercapacitor charge-balancing Balances up to 4 supercaps with a single IC package Balances 2-cell, 3-cell, 4-cell series-connected supercaps Scalable to larger supercap stacks and arrays Near zero additional leakage currents Zero leakage at 0.3V below rated voltages Balances series and/or parallel-connected supercaps Leakage currents are exponential function of cell voltages Active current ranges from 1000 A Always active, always fast response time Minimizes leakage currents and power dissipation
*IC pins are internally connected, connect to V-
PIN CONFIGURATIONS
SAL PACKAGE
ALD910027
V-
GN1
DN1
SN1
1
2
3
4
IC*
GN2
DN2
SN2, V-
V+
6
7
8
5
SCL PACKAGE
ALD810027
DN1
G N1
IC*
D N4
S N4
G N4
S N1
V-
1
2
3
4
5
6
7
8 9
10
11
12
13
14
15
16
D N2
G N2
IC*
DN3
S N3
G N3
S N2
V+
V-V-
M2M1
M4 M3
V-V-
APPLICATIONS
Series-connected supercapacitor cell leakage balancing
Energy harvesting Long term backup battery with supercapacitor outputs Zero-power voltage divider at selected voltages Matched current mirrors and current sources Zero-power mode maximum voltage limiter Scaled supercapacitor stacks and arrays
PRODUCT FAMILY SPECIFICATIONS
For more information on supercapacitor balancing, how SABMOSFETs achieve automatic supercapacitor balancing, the devicecharacteristics of the SAB MOSFET family, product family productselection guide, applications, configurations, and package infor-mation, please download from www.aldinc.com the document:
ALD8100xx/ALD9100xx Family of Supercapacitor Auto Balanc-ing (SAB) MOSFET ARRAYs
ORDERING INFORMATION (L suffix denotes lead-free (RoHS))
Operating Temperature Range Package 0 C to +70 C -40 C to +85 C
(Commercial) (Industrial)
16-Pin SOIC ALD810027SCL ALD810027SCLI
8-Pin SOIC ALD910027SAL ALD910027SALI
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SCHEMATIC DIAGRAM OF A TYPICALCONNECTION FOR A TWO-SUPERCAP STACK
1-8 DENOTES PACKAGE PIN NUMBERSC1-C2 DENOTES SUPERCAPACITORS
M1
M2
23, 8
4
1, 5
67
ALD9100XX
C1
C2+
+
V+ +15.0V
V1
IDS(ON) 80mA
SCHEMATIC DIAGRAM OF A TYPICALCONNECTION FOR A FOUR-SUPERCAP STACK
1-16 DENOTES PACKAGE PIN NUMBERSC1-C4 DENOTES SUPERCAPACITORS
V+ +15.0V
1, 5, 8, 16
2, 123
4
67
9
1011
13
1415
ALD8100XX
C4+
+C3
+C2
+C1M1
M2
M3
M4
V1
V2
V3
IDS(ON) 80mA
GENERAL DESCRIPTION (CONT.)
The voltage dependent characteristic of the ALD810027/ ALD910027 on-resistance is effective in controlling excessive volt-age rise across a supercapacitor when connected across it. In se-ries-connected supercapacitor stacks, when one supercapacitorvoltage rises, the voltage of the other supercapacitors drops, withthe ones that have the highest leakage currents having the lowestsupercapacitor voltages. The SAB MOSFETs connected acrossthese supercapacitors would exhibit complementary opposing cur-rent levels, resulting in little additional leakage currents other thanthose caused by the supercapacitors themselves.
For technical assistance, please contact ALD technical support [email protected].
APPLYING THE ALD810027/ALD910027:
1) Select a maximum supercapacitor leakage current limit for anysupercapacitor used in the stack. This is the same as output cur-rent, I OUT = IDS(ON) , of the ALD810027/ALD910027. Test that eachsupercapacitor leakage current meets this maximum current limitbefore use in the stack.
2) Determine whether the input voltage V IN (VGS = V DS ) at thatIOUT is acceptable for the intended application. This voltage is thesame voltage as the maximum desired operating voltage of thesupercapacitor. For example, with the ALD810027, I OUT = 1 Acorresponds to V IN = 2.70V.
3) Determine that the operating voltage margin, due to varioustolerances and/or temperature effects, is adequate for the intendedoperating environment of the supercapacitor.
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ALD810027Parameter Symbol Min Typ Max Unit Test Conditions
Gate Threshold Voltage V t 2.68 2.70 2.72 V V GS = VDS; IDS(ON) = 1 A
Offset Voltage V OS 5 20 mV V t1 - Vt2 or Vt3 - Vt4
Offset Voltage Tempco TC VOS 5 V/C Vt1 - Vt2 or Vt3 - Vt4
Gate Threshold Voltage Tempco TC Vt -2.2 mV/C V GS = VDS; IDS(ON) = 1 A
Output Current I OUT 0.0001 A VIN = 2.30V
Drain Source On Resistance R DS(ON) 23000 M
Output Current I OUT 0.001 A VIN = 2.40VDrain Source On Resistance R DS(ON) 2400 M
Output Current I OUT 0.01 A VIN = 2.50VDrain Source On Resistance R DS(ON) 250 M
Output Current I OUT 0.1 A VIN = 2.60VDrain Source On Resistance R DS(ON) 26 M
Output Current I OUT 1 A VIN = 2.70VDrain Source On Resistance R DS(ON) 2.7 M
Output Current I OUT 10 A VIN = 2.80VDrain Source On Resistance R DS(ON) 0.28 M
Output Current I OUT 100 A VIN = 2.94VDrain Source On Resistance R
DS(ON) 0.029M
Output Current I OUT 300 A VIN = 3.04VDrain Source On Resistance R DS(ON) 0.01 M
Output Current I OUT 1000 A VIN = 3.22VDrain Source On Resistance R DS(ON) 0.003 M
Output Current I OUT 3000 A VIN = 3.52VDrain Source On Resistance R DS(ON) 0.001 M
Output Current I OUT 10000 A VIN = 4.12VDrain Source On Resistance R DS(ON) 0.0004 M
Drain Source Breakdown Voltage BV DSX 10.6 V
Drain Source Leakage Current 1 IDS(OFF) 10 400 pA V IN = VGS = VDS = Vt - 1.0VIN = VGS = VDS = Vt - 1.0,
4 nA T A = +125 C
Gate Leakage Current 1 IGSS 5 200 pA V GS = 5.0V, V DS = 0VVGS = 5.0V, V DS = 0V,
1 nA T A = +125 C
Input Capacitance C ISS 15 pF V GS = 0V, V DS = 5.0V
Turn-on Delay Time t on 10 ns
Turn-off Delay Time t off 10 ns
Crosstalk 60 dB f = 100KHz
OPERATING ELECTRICAL CHARACTERISTICSV+ = +5V, V - = GND, T A = 25 C, V IN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ABSOLUTE MAXIMUM RATINGSV+ to V- voltage 15.0VDrain-Source voltage, V DS 10.6VGate-Source voltage, V GS 10.6VOperating Current 80mAPower dissipation 500mWOperating temperature range SCL 0 C to +70 COperating temperature range SCLI -40 C to +85 CStorage temperature range -65 C to +150 C
Lead temperature, 10 seconds +260 CCAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
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ALD910027Parameter Symbol Min Typ Max Unit Test Conditions
Gate Threshold Voltage V t 2.68 2.70 2.72 V V GS = VDS; IDS(ON) = 1 A
Offset Voltage V OS 5 20 mV V t1 - Vt2
Offset Voltage Tempco TC VOS 5 V/C Vt1 - Vt2
Gate Threshold Voltage Tempco TC Vt -2.2 mV/C V GS = VDS; IDS(ON) = 1 A
Output Current I OUT 0.0001 A VIN = 2.30VDrain Source On Resistance R DS(ON) 23000 M
Output Current I OUT 0.001 A VIN = 2.40VDrain Source On Resistance R DS(ON) 2400 M
Output Current I OUT 0.01 A VIN = 2.50VDrain Source On Resistance R DS(ON) 250 M
Output Current I OUT 0.1 A VIN = 2.60VDrain Source On Resistance R DS(ON) 26 M
Output Current I OUT 1 A VIN = 2.70VDrain Source On Resistance R DS(ON) 2.7 M
Output Current I OUT 10 A VIN = 2.80VDrain Source On Resistance R DS(ON) 0.28 M
Output Current I OUT 100 A VIN = 2.92V
Drain Source On Resistance R DS(ON) 0.029 M
Output Current I OUT 300 A VIN = 3.00VDrain Source On Resistance R DS(ON) 0.01 M
Output Current I OUT 1000 A VIN = 3.14VDrain Source On Resistance R DS(ON) 0.003 M
Output Current I OUT 3000 A VIN = 3.20VDrain Source On Resistance R DS(ON) 0.001 M
Output Current I OUT 10000 A VIN = 3.70VDrain Source On Resistance R DS(ON) 0.0004 M
Drain Source Breakdown Voltage BV DSX 10.6 V
Drain Source Leakage Current 1 IDS(OFF) 10 400 pA V IN = VGS = VDS = Vt - 1.0VIN = VGS = VDS = Vt - 1.0,
4 nA T A = +125 C
Gate Leakage Current 1 IGSS 5 200 pA V GS = 5.0V, V DS = 0VVGS = 5.0V, V DS = 0V,
1 nA T A = +125 C
Input Capacitance C ISS 30 pF V GS = 0V, V DS = 5.0V
Turn-on Delay Time t on 10 ns
Turn-off Delay Time t off 10 ns
Crosstalk 60 dB f = 100KHz
OPERATING ELECTRICAL CHARACTERISTICSV+ = +5V, V - = GND, T A = 25 C, V IN = VGS =VDS, IOUT = IDS(ON) unless otherwise specified
ABSOLUTE MAXIMUM RATINGSV+ to V- voltage 15.0VDrain-Source voltage, V DS 10.6VGate-Source voltage, V GS 10.6VOperating Current 80mAPower dissipation 500mWOperating temperature range SAL 0 C to +70 COperating temperature range SALI -40 C to +85 CStorage temperature range -65 C to +150 C
Lead temperature, 10 seconds +260 CCAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment.
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16 Pin Plastic SOIC Package
E
D
e
A
A1b
S (45 )
L
CH
S (45 )
SOIC-16 PACKAGE DRAWING
Millimeters Inches
Min Max Min MaxDim
A
A 1
b
C
D-16
E
e
H
L
S
1.75
0.25
0.450.25
10.00
4.05
6.30
0.937
8
0.50
0.053
0.004
0.0140.007
0.385
0.140
0.224
0.024
0
0.010
0.069
0.010
0.0180.010
0.394
0.160
0.248
0.037
8
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.350.18
9.80
3.50
5.70
0.60
0
0.25
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8 Pin Plastic SOIC Package
SOIC-8 PACKAGE DRAWING
L
CH
S (45 )
e
A
A1
b
D
S (45 )
EMillimeters Inches
Min Max Min MaxDim
A
A 1
b
C
D-8
E
e
H
L
S
1.75
0.25
0.45
0.25
5.00
4.05
6.30
0.937
8
0.50
0.053
0.004
0.014
0.007
0.185
0.140
0.224
0.024
0
0.010
0.069
0.010
0.018
0.010
0.196
0.160
0.248
0.037
8
0.020
1.27 BSC 0.050 BSC
1.35
0.10
0.35
0.18
4.69
3.50
5.70
0.60
0
0.25