AGNITRON TECHNOLOGY 14530 Martin Dr. • Eden Prairie, MN, 55344 • Tel: (952) 937.7505 • Fax: (612) 605.4327

AGNITRONAGNITRONAGNITRONTECHNOLOGY

SYSTEM FEATURES• Hazardous gas detection and safety alarms• Standard metal organic configuration includes capacity for up to 5 sources• Compact streamlined design provides reliable processing and requires minimal

maintenance• IMPERIUM control software with DeviceNet/PLC comm for MFCs, Baratrons,

temperature controllers and other I/Os

REACTOR DESIGN• Differential pumped seals• Vertical quartz tube reactor • Water cooled reactor wall and base plate• Separate injection for alkyls and hydrides• Capability of 3 X 2”, 1 x 3” or 1 x 4” wafer loading• Inductive heating for high temperature growth is

controlled by RF coil• Ferrofuidic pass through with servo motor rotation

up to 1500 RPM• Custom adjustable distance between gas injection

flange and susceptor• No graphite within the reactor to minimize boron

migration into the grown material

ENHANCED PROCESS CAPABILITIES• Temperature controlled showerhead• Pressure process window: 25-300 Torr• Susceptor cool down rate > 100°C per

minute• Optical interferometer for

insitu growth monitoring• Point of use gas purifiers for

H2, N2 and NH3• Better than 2°C across

susceptor temperature uniformity

• Temperature capability up to 1500°C without degradation within the reactor

• Emissivity corrected pyrom-eter with feedback control loop to RF heating coil

AGILIS

A G I L I S

The AGILIS MOCVD system delivers state of the art Aluminum III-Nitride processing capabilities in a compact modular design. The temperature controlled small volume reactor provides economical process-ing for materials research and development. Reactor configurations are available with 1 or 3 wafer suscep-tors for wafer sizes from 25-100mm. Induction heating enables precise high temperature growth up to 1500°C while the temperature stabilized injection flange pre-vents pre-reaction and decomposition of precursors.

Adjustable spacing between the susceptor and injec-tion flange provides additional flexibility for process control. The advanced IMPERIUM control system provides unparalleled capabilities not offered by other compact MOCVD systems.

AGILIS is ideal for growth of:Materials: AlN, AlGaN, InGaN, doped and undopedStructures: LEDs, LDs, HEMTs, MQWs, SLSs

A G I L I S

Reactor Performance• Dislocation density in GaN, AlN, AlGaN below 5x107 cm-3

• GaN XRD: FWHM TC w RC (0002) < 220 arcsec FWHM TC w RC (11-24) < 150 arcsec• Background doping of GaN: 9x1015 cm-3

• Max electron concentration for GaN:Si: 1.8x1019 cm-3

• Max hole concentration for GaN:Mg: 7x1017 cm-3

• 2DEG AlGaN/GaN mobility up to 2000 cm2V-1s-1

14530 Martin Dr. • Eden Prairie, MN, 55344Tel: (952) 937.7505 • Fax: (612) 605.4327sales@agnitron.com • www.agnitron.com

© 2012 AGNITRON TECHNOLOGY, INC. ALL RIGHTS RESERVED

www.agnitron.com

Versatile Modular Design• Modular concept allows switching MO sources in minutes• Versatility enables rapid and economical material growth for

research and concept dem-onstration

• Compact 28 ft2 footprint is easily placed in lab space

Below: w-2q scans of strained 7 period Ga0.88In0.12N/GaN MQW grown on 5 µm thick GaN; (blue trace – experimental, red trace – fit). Total MQW thickness = 53.34 nm; Ga0.88In0.12N is 2.52 nm thick; Δc/c = 12683 ppm; relaxation % = 0.0. “Zero” degree peak is XRD signal from 5 µm thick GaN buffer layer.

Above: w-2q scans of strained 5 period Al00.25Ga0.75N/GaN MQW grown on 1.3 µm thick Al00.25Ga0.75N / sapphire (blue trace); 1.3 µm thick Al0.25Ga0.75N/Sap-phire reference structure (green trace). Total MQW thickness = 38 nm; GaN QWs are 5.3 nm thick; relaxation % = 0.0.