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    Photolithography:

    The Basics of Projection Printing

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    Photolithography

    Photolithography is at the Center of the WaferFabrication Process

    *

    Thin Films

    Implant

    Diffusion Etch

    Test/Sort

    Polish

    PhotoPatterned

    wafer

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    Photolithography Types

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    Projection System

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    4

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Block diagram of a generic projection imaging system

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    Projection System

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    5

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Illumination SystemIllumination system delivers light to the maskSufficient intensity

    Proper directionality

    Proper spectral characteristics

    Adequate uniformity across the field

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    Projection System

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    6

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Illumination System

    Mask

    changes the transmittance of the light

    Causes diffraction

    Diffraction

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    Projection System

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    7

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Illumination System

    Objective lens

    Picks up a portion of the diffraction pattern

    Projects the image onto the photoresist

    Image Formation

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    Diffraction Analysis

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    8

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Illumination System

    Mask

    changes the transmittance of the light

    Causes diffraction

    Diffraction

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    Diffraction

    Theory of propagation of light

    Solution to Maxwells Equations: complicated

    Diffraction Integrals for far field: simpler

    Light propagation in homogenous medium

    FresnelDiffraction

    Region

    (z w)

    KirchhoffDiffraction Region

    (z > /2)

    FraunhoferDiffractionRegion

    (z w2/)

    Fraunhofer Diffraction Integrals

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    Fraunhofer Diffraction Integral

    Mask Transmittance Function:

    How does the mask transmit light?

    Requires the solution of Maxwells equations for

    that material: complicated!

    Kirchhoff boundary condition

    Feature size > 2 && chrome thickness < /2

    Ignore diffraction caused by mask topography

    ),( yxtm

    chrome0

    regionnttranspare1),(

    yxtm

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    Fraunhofer Diffraction Integral

    maskat theincidentfieldElectric:),(

    functionmittancemask trans:),(

    mediumtheofindexrefractive:

    planendiffractiomask tofromdistance:

    lightofhwavelengt:

    planendiffractio:plane''

    planemask:plane

    yxE

    yxt

    n

    z

    yx

    yx

    Given

    m

    dxdyeyxtyxEffTyfxfi

    myxmyx )(2),(),(),(

    z

    nyf

    z

    nxf

    ff

    ffT

    where

    yx

    yx

    yxm

    ',

    '

    patternndiffractioofsfrequencieSpatial:,

    patternndiffractiotheoffieldElectric:),(

    Fourier Optics

    The diffraction pattern is

    just the fourier transform

    of the mask pattern

    transmittance!

    )),(),((),( yxtyxEFffT myxm

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    Diffraction Examples

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    12

    x00

    mask

    01

    Tm(fx)

    tm(x)

    Two typical mask patterns, an isolated space and an array of equal lines and spaces, and

    the resulting Fraunhofer diffraction patterns assuming normally incident plane wave

    illumination. Both tm and Tm represent electric fields.

    x

    xxm

    f

    wffT

    )sin()(

    j

    x

    x

    xxm

    p

    jf

    f

    wf

    p

    fT )()sin(1

    )(

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    Chris A. Mack, Fundamental

    Principles of Optical

    Lithography, (c) 2007

    13

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    -3 -2 -1 0 1 2 3

    w fx

    Intensity

    Magnitude of the diffraction pattern squared (intensity) for a single space (thick solid

    line), two spaces (thin solid line), and three spaces (dashed lines) of width w. For the

    multiple-feature cases, the linewidth is also equal to w.

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    Image Formation: Imaging Lens

    Chris A. Mack, Fundamental Principles ofOptical Lithography, (c) 2007

    14

    Light Source

    Condenser Lens

    Mask

    Objective LensWafer

    Illumination System

    Objective lens

    Picks up a portion of the diffraction pattern

    Projects the image onto the photoresist

    Image Formation

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    Imaging Lens

    The diffraction pattern extends throughout

    the x-y plane

    The objective lens (finite size) can only capture

    a part of this pattern

    Higher spatial frequencies lost

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    16

    Aperture

    (x, y)-plane

    ObjectPlane

    max

    ObjectiveLens

    EntrancePupil

    maxsinnNA

    NA

    p

    n

    z

    nyf

    n

    z

    nxf

    y

    y

    xx

    min

    1

    sin'

    sin'

    NA/ : The maximum spatial frequency that can enter the lens

    Large NA => larger portion of diffraction pattern is captured => better image

    NA

    KR

    1

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    Formation of the Image

    Lens Pupil Function

    Mathematical description of the amount of the

    light entering the lens

    Lens performs the inverse fourier transform of

    the transmitted diffracted pattern

    NA

    ff

    NAffffP

    yx

    yxyx

    22

    22

    ,0

    ,1),(

    ),(),(),(),(),(

    1

    yxyxM ffPffTFyxE

    yxgyxgFF

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    18

    0.0

    0.2

    0.4

    0.6

    0.8

    1.0

    1.2

    1.4

    -w -w/2 0 w/2 w

    Horizontal Position

    Rela

    tiveIntensity N = 1

    N = 3

    N = 9

    Aerial images for a pattern of equal lines and spaces of width was a function of the

    number of diffraction orders captured by the objective lens (coherent illumination). N is

    the maximum diffraction order number captured by the lens.

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    PSF: Point Spread Function

    Means of characterizing the resolving

    capability of an imaging system

    Normalized image of an infinitely small

    contact hole

    NANAR

    JPSF

    rNA

    JffPFyxE

    ffTyxt

    ideal

    yx

    yxmm

    7.0to66.0

    )2(

    )2(),(),(

    1),()0,0(),(

    2

    1

    11

    0.0

    -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5

    Normalized Radius = rNA/

    0.2

    0.4

    0.6

    0.8

    1.0

    NormalizedIn

    tensity

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    Oblique Illumination

    Plane wave strikes at an angle

    Phase differs for different points on mask

    Shift in the position of the diffraction pattern

    NA

    kR

    ffPffffTFffyxE

    f

    eyxE

    yxyyxxmyx

    x

    xi

    2

    )},()','({)',',,(

    'sin'

    ),(

    1

    1

    'sin2

    Diffraction Pattern

    Lens Aperture

    Mask Pattern(equal lines and spaces)