advanced rf integration for lte smartphones - en.tdk.eu · pdf fileadvanced rf integration for...
TRANSCRIPT
Christian Block CEO and CTO of the Systems, Acoustics, Waves Business Group
CTO and Member of the Management Board of EPCOS AG November 12, 2014
Technologies & Products Press Conference 2014
Advanced RF integration for LTE smartphones
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 2
LTE is the driver of future RF architectures
Miniaturization • Multiband / multimode architectures
in compact handsets • Low insertion height + small footprint Superior performance • High thermal and frequency stability • High power durability • Excellent electrical performance
(e.g. lowest losses, highest linearity) • Low costs Advanced architectures • Carrier aggregation • Envelope tracking • MIMO concepts
Challenges for RF modules
RF integration is the key enabler of next-generation smartphones.
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 3
Building blocks of the module integration architecture
High band (2300 – 2690 MHz)
e.g. bands 7, 40, 41, 30
Mid band (1710 – 2170 MHz)
e.g. bands 1, 2, 3, 4, 25, 34, 39
Low band (699 – 960 MHz)
e.g. bands 5, 8, 12, 13, 20,
26, 28, 29
Antenna(s) Antenna switches Duplexers
Power Amplifiers RF IC
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 4
Today’s RF module integration is mainly based on combining similar building blocks into one package
Evolving RF module integration strategy (1)
Example • Antenna switch modules • Duplexer banks
EPCOS duplexer bank module
High Band
Mid Band
Low Band
Antenna(s) Antenna switches Duplexers
Power Amplifiers RF IC
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 5
New features like carrier aggregation, envelope tracking and multimode/multiband power amplifiers are driving new integration schemes.
Evolving RF module integration strategy (2)
Antenna(s) Antenna switches Duplexers
Power Amplifiers RF IC
High Band
Mid Band
Low Band
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 6
The combination of different functions such as duplexers and antenna switches into multifunctional front-end modules increases the degree of integration and saves space.
Evolving RF module integration strategy (3)
EPCOS B5208 FEMiD module
Example • EPCOS front-end modules
with 6 integrated duplexers (FEMiD)
Antenna(s) Antenna switches Duplexers
Power Amplifiers RF IC
High Band
Mid Band
Low Band
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 7
Frequency separation is driving future integration
The next integration step is one fully integrated RF module for each frequency range, including multimode/multiband power amplifiers, duplexers, RF switches and RF matching.
Requirements of high-density integration of PAs with duplexers into PA based modules • Excellent RF performance
covering 0.5 to 3.5 GHz • High power capability /
thermal management • Smallest footprint in
combination with 0.80 mm height
• Highest cost efficiency
Antenna(s) Antenna switches Duplexers
Power Amplifiers RF IC
High Band
Mid Band
Low Band
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 8
Key technologies for RF modules
Advanced RF modules
• Wafer-based front-end technologies for PAs, switches and duplexers
• SAW and BAW filter technologies with low TCF
Micro-acoustic
technology
• Chip-sized SAW package (CSSP, CSSPlus, CSSP Cu)
• Die-sized SAW package (DSSP) • Thin-film acoustic package (TFAP)
Packaging technology
• Low-temperature co-fired ceramic (LTCC) • Semiconductor embedded in substrate
(SESUB) • Multilayer laminate
Module integration technology
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 9
Advanced micro-acoustic technologies improve RF filter performance
Reduction of losses to improve overall resonator Q • Lower insertion attenuation • Higher skirt steepness Improved piezoelectric coupling • Realization of filters for larger filter bandwidth • Prerequisite for efficient temperature compensation
technology
Temperature compensation technology • Reduced center frequency drift over temperature • Zero temperature drift for critical skirts
Standard performance without temperature compensation
Improved performance with temperature compensation
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 10
Compared to standard SAW • Lower |TCF| of ≈ 20 ppm/K • Lower losses • No spurious modes
Compared to standard SAW • Lower |TCF| of ≈ 20 ppm/K • Lowest losses @ 2 GHz • Hybrid BAW / SAW solutions possible
SAW and BAW filters with low |TCF| of ≈ 20 ppm/K
TCF = temperature coefficient of frequency
Two micro-acoustic technologies already available with temperature compensation
Temperature-compensated SAW duplexer for band 20
Hybrid BAW / SAW duplexer
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 11
Advanced TDK packaging technology platforms
• Designed for both discrete components and module integration • Support additional functionality (e.g. integrated or embedded passives) • Drive miniaturization and cost reduction • Offer improve thermal management and interconnect technology • Achieve low insertion of < 250 µm (DSSP and TFAP)
Flip-chip package Wafer-level package Bare die package
CSSP3 Glob-Top CSSP3 Cu frame DSSP TFAP
CSSP chip-sized SAW package DSSP die-sized SAW package TFAP thin-film acoustic package
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 12
• Die size = package size
• Low insertion height of less than 200 µm, including bumps
• Hermetic package withstands overmolding processes up to 80 bar
• Compatible with all micro-acoustic RF technology platforms
TFAP – ultra-thin package for all RF platforms WLAN module with TFAP BAW filter
TFAP BAW filter
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 13
TFAP process enables optimal RF performance
Frequency [MHz]
Atte
nuat
ion
[dB]
Before packaging After packaging
0
-10
-20
-30
-40
-50
-60
-70 1750 1800 1850 1900 1950 2000
TFAP package has no negative impact on RF or electromagnetic performance.
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 14
Integrated module development
• Integration of passive components
• Embedding of active components
• Multiple interconnect technologies (wire bond, SMD, solder balls, Cu pillars)
• Own high-volume LTCC production
• 3D electromagnetic simulation and co-design with duplexers
Buried inductor
Buried capacitor
Embedded ICs
With flip-chip and SMD components
LTCC
SESUB
Multilayer laminate
The combination of module integration technologies
enables perfect-fit solutions.
Technologies & Products Press Conference 2014 • Advanced RF integration for LTE smartphones
© EPCOS AG A TDK Company
CC • 11/14 • 15
Roadmap
Module integration technology
Today Tomorrow
Multilayer substrates with passive integration
High-density 3D integration of active and
passive components
Micro-acoustic
technology |TCF| ≈ 20 ppm/K
700 to 2700 MHz
|TCF| < 10 ppm/K
400 to 4000 MHz
Temperature compensation and bandwidth
Packaging technology < 0.3 mm < 0.2 mm
Insertion height of filters and duplexers
Degree of integration
www.global.tdk.com • www.epcos.com