advanced materials and on wafer chip evaluation for …
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
University of Virginia Microfabrication Laboratories (UVML)
Electrical & Computer Engineering Arthur Lichtenberger: Professor & Director UVML / Principal Investigator Michael Cyberey: Scientist / Engineering Lead University of Virginia Functional Thin Film Laboratory
Materials Science Jiwei Liu: Associate Professor Saliporn Kittiwatanakul: Scientist
ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
North America ALMA Strategic Context
• ALMA’s continued & long-term success is of critical importance to North American (NA) & international radio astronomy
• 8 of the 10 ALMA bands currently use superconducting (SIS) mixers
• Maintaining the NA investment in Bands 3&6 and creating significant new NA opportunities requires efficient & productive access to a robust SIS foundry
• Realizing next generation ALMA SIS mixers that operate near their quantum limit with improved performance will require new materials & designs, and similar access to such an advanced SIS foundry
There exists only one North American SIS foundry capable of making and
developing such radio astronomy mixers - the University of Virginia Microfabrication Laboratories (UVML).
In addition to the technical thrusts, the proposed funding is important for continuity of ALMA's essential infrastructure by helping to maintain the UVML.
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
University of Virginia Microfabrication Laboratories (UVML)
• Long standing international program of excellence in THz materials, devices, circuits and metrology
• 1970s pioneering development, in collaboration with NRAO, of semiconductor Schottky barrier diode devices & receivers
• Collaborated with the NRAO & other groups > 30 years to develop state of the art superconducting receivers for radio astronomy
• Demonstrated SIS mixers that exceed design specs for ALMA Band3, 6, 7 & 8
• Is the SIS foundry for all Band3 and Band6 SIS mixer chips
• Maintain sophisticated fabrication process for superconducting devices and circuits
• Excel at fast prototyping of new processes and the development of superconducting circuits in close collaboration with our radio astronomer partners
• Excellently positioned for the investigation and development of new SIS materials and chip architecture for ALMA
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Study Proposal - Big Picture
The UVML ALMA study proposal has two main thrusts: The first thrust is a study of the suitability of an alternative materials deposition technology – Reactive Bias Target Ion Beam Deposition (RBTIBD) – that offers unique capabilities to tailor materials and interfaces, to realize all NbTiN, higher energy gap (hence higher frequency) SIS devices needed for optimal second-generation band9 and band10 receivers and to provide a technical path forward for a future band11 receiver. The second thrust is the study of an all-wafer SIS device screening approach. Current SIS device evaluation is realized by time consuming hand mounting of a few individual device chips onto a carrier chip for dip testing in a liquid helium dewar. Realizing on-wafer cryogenic dc probing of SIS wafers would be an enormous benefit to all ALMA superconducting receiver programs.
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Current ALMA SIS Mixers:
• Use of an Al overlayer onto the Nb base electrode • Magnetron sputtering of the SIS Trilayer • Al oxide ~ 1nm critical tunnel barrier grown from part of the Al overlayer • Nb/Al-AlOx/Nb • SIS Nb energy gap, nominal ~700 GHz
First Thrust: All NbTiN SIS junctions (NbTiN/AlN/NbTiN)
Gurvitch Al overlayer process [2]
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
• Ideal switch-like I-V at 2.9 mV (energy gap) ~700 GHz
• SIS low loss operation limited in f by energy gap
• Actual I-V has turn-on below 2.9 mV ~ 650 GHz
• Mixer performance will suffer at 650 GHz & above
• Conductor loss & Josephson noise
• ALMA band 9 (602-720 GHz) band 10 (787-950 GHz)
• B9 & B10 suffer from all Nb junction material choice
• Higher gap SIS electrodes will push the optimal frequency performance limit to higher frequencies
Current ALMA Nb/Al-AlOx/Nb SIS Mixers:
Typical SIS I-V curve for a high quality UVA Nb/Al-oxide/Nb junction [1].
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
ALMA’s all Nb SIS (Nb/Al-AlOx/Nb) junction Receiver Results
SSB receiver noise temperature vs frequency for typical ALMA SIS receivers. Bands 3-8 have sideband-separating mixers and Bands 9 and 10 have double-sideband mixers [1]. The performance of the upper half of band9 and the entire band10 could be improved substantially with high energy gap NbTiN/AlN/NbTiN SSB mixers and Bands 6 and above improved with AlN barriers.
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Candidate materials for higher energy gap SIS junctions
NbN and NbTiN (1.6 - 1.7 times larger energy gap than Nb)
• NbN has been studied for decades for SIS junctions [3-10] • Yet due to performance issues, not selected for ALMA’s higher bands
• Mixer performance limited due to surface resistance in NbN films [11-12]
• NbN/AlN/NbN SIS mixers have performed poorer than anticipated- primary problems with superconductive properties, including penetration depth and loss, resulting in “drastically deteriorated mixing properties” [14]
l However, NbTiN may be a suitable candidate • NbTiN exhibited significantly smaller surface resistance than NbN in studies of RF cavities [13].
• UVA’s Nb/Al-AlN/NbTiN junctions are of extremely high quality. à Unexplored, all NbTiN (NbTiN/AlN/NbTiN) SIS mixers clearly the optimal path to pursue for low noise operation up to ~1.1 THz
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Reactive Bias Target Ion Beam Deposition (RBTIBD)
RBTIBD is a hybrid between ion beam and conventional magnetron sputter deposition that combines the best of each technique.
Left: schematic of Reactive Bias Target Ion Beam Deposition system; Right: Photograph of the UVA 4-Wave RBTIBD tool that can take 50 & 100mm wafers, automatic or manual operation.
Study the use of RBTIBD in a radical departure from the standard Al overlayer approach with the direct sputtering of AlN tunnel barrier (NbTiN/AlN/NbTiN).
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Reactive Bias Target Ion Beam Deposition (RBTIBD)
• Ion source: uniform low-energy (5-50eV) inert ions _no re-sputtering • Flux & dynamics of ions to targets is manipulated by independent pulsed dc bias • Target voltage can be set • Target current is fine-tuned through the pulse width and frequency • Ion flux can also be directed at the wafer • Rotatable wafer stage • Wafer stage temperature control to 650C (control material crystallinity) • Taylor/match lattice constants of NbTiN and AlN films
→ epitaxial growth of AlN on NbTiN
RBTIBD: unique ability to precisely and separately control incoming sputtered atom energies to tailor composition, phase formation, surface roughness and interfaces [22-27] – properties critical to achieving such a direct sputtered AlN tunnel barrier.
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
Experience • Lichtenberger+Cyberey group’s experience in optimizing Tc, penetration depth, resistivity & stress for magnetron films
• Lu+Kittiwatanakul materials science group’s extensive experience with the RBTIBD tool and associated materials/interfaces/surface engineering and analysis
• Both groups currently collaborating on C3 iARPA Nb superconducting memory (JMRAM) project for SFS type trilayer structure using RBTIBD approach
Primary Characterization Tools • Characterize microstructures and physical properties as a function of growth conditions, the substrate type, and the film thickness. • X-ray diffraction (XRD) characterize the microstructure as well as the film strain • Atomic force microscopy (AFM) characterize film roughness and the grain size • X-ray photoemission spectroscopy (XPS) characterize the electronic structure
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
How to screen a finished SIS mixer wafer: • One could post processing (lap/thin) individual mixer chips, mount in a mixer block, cool and dc evaluate the SIS junctions … painstaking and time-consuming
• Or, one could mount a few mixer chips on a carrier and dip into liquid helium for SIS I-V testing. Time consuming. Care not to damage the mixers. Not practical for screening an entire wafer of thousands of chips
Second Thrust: Whole SIS-Wafer Cryogenic Screening
Finished Band8 UVML-NRAO 5um Si mixer chip with 2um Au beam leads
SOI chip mounted with silver paint to a quartz test carrier wafer
Ideally a mixer wafer could also be dc evaluated in a simpler screening process and the selected chips, with now known electrical characteristics, used in the receivers.
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• Numerous reports of cryogenic probing of devices in the literature [21-26], especially for low noise amplifiers (LNAs)
• But “cryogenic” is used to describe probed sample temperatures > 15K
• There is no ~ 4.2K DUT wafer probing solution
• Enormously important for ALMA: large number of receivers, increasingly sophisticated mixer architecture of balanced and or sideband separating mixers that require multiple matched mixer chips, and future array receivers.
• Of particular benefit to all ALMA superconducting receiver programs
• Allow quick verification of an SIS mixer wafer
• Rejection of inferior devices
• Important matching of similar device characteristics in a mixer
• Feasible path toward populating receiver arrays with suitable mixer chips
• SOI wafers- allow for frontside screening of the wafer before proceeding to the two week long, labor and tool intensive backside wafer processing.
Whole wafer cryogenic screening
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Whole wafer cryogenic screening In this study
• Investigate and optimize the thermal design, connections and heat management of our existing Lake Shore cryogenic probe station,
• Design and realize improved dc cryogenic wafer probes
• Design and realize a prototype mixer chip layout to facilitate probing.
(left) top level thermal schematic (right) picture with four dc probes
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
DC probing of individual (previously verified) SIS chips
• Superconducting properties (e.g. Nb gap) depend on temperature (90% at 5.5K) • Platter temperature measured, reaches 4.2K • SIS I-V curve at platter temperature of 4.2K gives actual I-V of ~ 7.5-8K • I-V at platter temperature of 7.9K is resistive (not superconductive) • Clearly the SIS chip temperature is significantly higher than the platter temperature • As is, not usable for screening SIS devices • Additional Limitations:
• Currently requires 4 large DC probes • Commercial probes not well heat-sunk • Use of 20 mil DC wires to outside world
UVA’s Lake Shore Cryogenic Probe Station
I-V plotted versus measured platter temperature.
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
We will design our own improved dc wafer probe
• UVML has extensive experience in the engineering of wafer probes • Developed 1st THz wafer probe, split-block design, 15um SOI chip [28-31]
• In collaboration with Lake Shore to develop RF WR5.1 cryogenic probe
• Development of a dc cryogenic probe - synergistic UVML activity
• Our wafer probe - compatible with 4.2K environment
• Our Au plated split-block probe - excellent thermal connection to Au plated straps
• Si probe chip with Au mounting pads, mechanically clamped between the splits blocks, will provide an improved thermal circuit
• UVML probe: realize arbitrary probe tip configurations in the Si chip • Realize two isolated lines • Allow a 4-point measurement with only two probes (or future four isolated
lines, allowing use of only one probe) • Design a thermal stage: recess for our 50 mm wafers with ring fixture to better thermally clamp the wafer around the entire perimeter.
• Au metalizing the backside of our wafers for improved thermal connection
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ADVANCED MATERIALS AND ON WAFER CHIP EVALUATION FOR SECOND GENERATION ALMA SUPERCONDUCTING MIXERS 06-15
• Study is not aimed at benefiting or realizing just one particular ALMA project or receiver.
• This work will technically benefit all ALMA superconducting research efforts and the resulting astronomical science.
• This includes ongoing plans for greater sensitivity, more bandwidth, more beams on sky, and more flexibility in observing modes including multi-band observations.
à A successful high-energy gap NbTiN/AlN/NbTiN study would point all ALMA
partners toward optimal next generation higher frequency receiver materials & designs.
à Realizing on wafer cryogenic dc screening of SIS wafers would benefit all ALMA superconducting receiver programs, including the ongoing ALMA Study for a 2nd generation Band6 receiver, and multi-beam receivers.
In Conclusion
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References [1] A. R. Kerr, S.-K. Pan, and W. G. Lyons, "The Genesis of SIS Mixers – The Legacy of John Tucker in Radio Astronomy,” IEEE MTT-S International Microwave Symposium Digest, 2015. [2] M. Gurvitch, M.A. Washington, and H.A. Huggins, “High Quality Refractory Josephson Tunnel Junctions Utilizing Thin Aluminum Layers,” Applied Physics Letters, 42, 1983. [3] B.D. Hunt, H.G. LeDuc, S.R. Cypher, and J.A. Stern, "NbN/MgO/NbN Edge-Geometry Tunnel Junctions", Appl. Phys. Lett. 55,81 (1989). [4] W.R. McGrath, H.H.S. Javadi, S.R. Cypher, B. Bumber, B.D Hunt, H.G. Leduc, “Low-Noise 205 GHz SIS Mixers Using High Current Density Nb and NbN Junctions,” Second International Symposium on Space Terahertz Technology, 1991 423-438 [5] H.G. Leduc, A. Juda, S.R. Cypher, B. Bumble, B.D. Hunt, and J.A. Stern, “Submicron Area NbN/MgO/NbN Tunnel Junctions for SIS Mixer Applications,” IEEE Trans Magn. Vol 27, No-2, March 1991 [6] Z. Wang, A. Kawakami, Y. Uzawa, and B. Komiyama, "NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature," IEEE Trans. on Applied Superconductivity, Vol. 5, No.2, pp2322-2325, June 1995. [7] A. Karpov, B. Plathner, J. Blondel, M. Schicke, K. H. Gundlach, M Aoyagi and S. Takada,"Noise and Gain in Frequency Mixers with NbN SIS Junctions," IEEE Trans. on Superconductivity, Vol. 7, No. 2, pp1077-1080, June 1997 [8] A. Kawakami and Z. Wang, “Fabrication and characterization of epitaxial NbN/MgO/NbN Josephson tunnel junctions,” J. Appl. Phys., vol. 90, no. 9, pp. 4796–4799, 2001 [9] A. Kawakami, Y. Uzawa and Z. Wang, " Development of epitaxial NbN/MgO/NbN superconductor-insulator -superconductor mixers for operations over the Nb gap frequency," Applied Physics Letters, Vol. 83, No. 19, pp3954-3956, Nov. 2003. [10] Z. Wang, A. Kawakami, Y. Uzawa, and B. Komiyama,"NbN/AlN/NbN tunnel junctions fabricated at ambient substrate temperature," IEEE Trans. on Applied Superconductivity, Vol. 5, No.2, pp. 2322-2325, June 1995. [11] Wang, A. Kawakami, Y. Uzawa, and B. Komiyama, “High critical current density NbN/AIN/NbN tunnel junctions fabricated on ambient temperature MgO substrates,” Appl. Phys. Lett. 64, pp. 2034-2036, 1994 [12] A. Karpov, B. Plather, and J. Blondel, “Noise and gain in high frequency mixers with NbN SIS junctions,” IEEE Trans. Applied Supercondtivity 7, pp. 1077-1080, 1997. [13] R. Di Leo, A. Nigro, G. Nobile, and R.Vaglio, “Niobium- titanium nitride thin films for superconducting rf accelerator cavities,” J. Low Temp. Phys. 78, pp. 4 1-50, 1990. [14] M. Takeda, W. Shan, T. Kojima, S. Saito, M. Kroug, Y. Uzawa and Z. Wang, “Low-noise waveguide SIS mixer with NbN/AlN/NbN tunnel junctions tuned by an NbN/MgO/NbTiN microstrip circuit,” Superconductor. Sci. Technol. 22, June, 200
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References continued [15] K. G. West, J. W. Lu, J. Yu, D. Kirkwood, W. Chen, Y. H. Pei, J. Claassen, and S. A. Wolf, Growth and characterization of vanadium dioxide thin films prepared by reactive-biased target ion beam deposition. Journal of Vacuum Science & Technology A, 26(1), 133-139, 2008. [16] J. W. Lu, K. G. West, and S. A. Wolf, Very large anisotropy in the dc conductivity of epitaxial VO2 thin films grown on (011) rutile TiO2 substrates. Applied Physics Letters, 93(26), 2008. [17] S. Kittiwatanakul, J. W. Lu, and S. A. Wolf, Transport Anisotropy of Epitaxial VO2 Films near the Metal-Semiconductor Transition. Applied Physics Express, 4(9), 2011. [18] S. Kittiwatanakul, J. Laverock, D. Newby, K. E. Smith, S. A. Wolf, and J. Lu, Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure. Journal of Applied Physics, 114(5), 053703, 2013. [19] S. Kittiwatanakul, S. A. Wolf, and J. Lu, Large epitaxial bi-axial strain induces a Mott-like phase transition in VO2. Applied Physics Letters, 105(7), 073112, 2014. [20] Y. Wang, R. B. Comes, S. Kittwantanakul, S. A. Wolf and J. W. Lu, Epitaxial niobium dioxide thin films by reactive-biased target ion beam deposition, Journal of Vacuum Science & Technology A, 33, 021516 (2015) [21] H. Meschede, R. Reuter, J. Albers, J. Kraus, D. Peters, W. Brockerhoff, F. Tegude, M. Bode, J. Schubert, and W. Zander, ”On-wafer microwave measurement setup for investigation on HEMT’s and high Tc superconductors at cryogenic temperatures down to 20 K”, IEEE Trans. Microw. Theory Techn., vol. 40, no. 12, Dec. 1992. [22] V. Hietala, M. Housel, R. Caldwell, ”Network analyzer calibration for cryogenic on-wafer measurements”, ARFTG Conference, vol. 25, San Diego, May 1994. [23] J. Laskar, J. Bautista, M. Nishimoto, M. Hamai, and R. Lai,” Development of accurate on-wafer, cryogenic characterization techniques”, IEEE Trans. Microw. Theory Techn., vol. 44, no. 7, Dec. 1996. [24] T. Vaha-Heikkila, J. Varis, H. Hakojarvi, and J. Tuovinen, ”Wideband cryogenic on-wafer measurements at 20-295 K and 50-110 GHz”, European Microwave Conference, vol 33, Munich, 2003. [25] D. Russell, K. Cleary, and R. Reeves, "Cryogenic probe station for on-wafer characterization of electrical devices," Review of Scientific Instruments 83, 044703, 2012. [26] R. Reeves, K. Cleary, R. Gawande, J. Kooi, , J. Lamb, A. Readhead, , S. Weinreb, T. Gaier, , P. Kangaslahti, D. Russell, L. Samoska, M. Varonen, R. Lai, and S. Sarkozy, "Cryogenic Probing of mm-Wave MMIC LNAs for Large Focal-Plane Arrays in Radio-Astronomy," IEEE Proceedings from the 9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014. [27] A. R. Kerr and N. Horner, “The Low temperature Thermal Resistance of High Purity Copper and bolted Copper Joints,” NRAO Electronics Division Technical Note No. 163, August 30, 1991.
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References continued [28] M. Bauwens, N. Alijabbari, N. S. Barker, A. Lichtenberger, R. M. Weikle, "A 1.1 THz Micromachined On-Wafer Probe," International Microwave Symposium (IMS) Digest, 4, 2014. [29] M. F. Bauwens, L. Chen, C. Zhang, A. I. Arsenovic, N. Alijabbari, A. W. Lichtenberger, N. Scott Barker and R. M. Weikle, “Characterization of Micromachined on-Wafer Probes for the 600–900 GHz Waveguide Band II,” IEEE Transactions on Terahertz Science and Technology, Vol 4, 527-529, July 2014. [30] L. Chen, C. Zhang, T. J. Reck, C. Groppi, A. Arsenovic, A. Lichtenberger, R. M. Weikle, N. S. Barker, “Terahertz Micromachined On-wafer Probes: Repeatability & Robustness,” IEEE Trans. Microwave Theory and Tech., 2012. [31] L. Chen, C. Zhang, T.J. Reck, A. Arsenovic, M. Bauwens, C. Groppi, A.W. Lichtenberger, R.M. Weikle, II, and N. Scott Barker “Terahertz micromachined on-wafer probes: repeatability and reliability,” IEEE Trans. Microwave Theory and Tech., Vol. 60, No. 9, 2894-2902, Sept 2012.