actfel device modeling via spice
DESCRIPTION
ACTFEL Device Modeling via SPICE. J. P. Bender and J. F. Wager Department of Electrical and Computer Engineering Center for Advanced Materials Research Oregon State University Corvallis, Oregon 97731-3211 http://www.ece.orst.edu/~jfw. Organization:. Fowler-Nordheim Diode Model - PowerPoint PPT PresentationTRANSCRIPT
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ACTFEL Device Modeling via SPICE
ACTFEL Device Modeling via SPICE
J. P. Bender and J. F. Wager
Department of Electrical and Computer Engineering
Center for Advanced Materials Research
Oregon State UniversityCorvallis, Oregon 97731-3211http://www.ece.orst.edu/~jfw
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Organization:Organization:
• Fowler-Nordheim Diode Model
• Double-sheet Charge Model
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Fowler-Nordheim Diode ModelFowler-Nordheim Diode Model
q
qm
mm
qJ B
B
FN 3
*24exp
*16
23
0
2
22
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Fowler-Nordheim Diode model: Q-VFowler-Nordheim Diode model: Q-V
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Fowler-Nordheim Diode model: C-VFowler-Nordheim Diode model: C-V
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Fowler-Nordheim model: Transient
response
Fowler-Nordheim model: Transient
response
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Fowler-Nordheim model: Transferred
Charge Curve
Fowler-Nordheim model: Transferred
Charge Curve
Fowler-Nordheim Model
Experimental Data
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FN Model Scaling with Varying Vmax
FN Model Scaling with Varying Vmax
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Modified Fowler-Nordheim Diode ModelModified Fowler-Nordheim Diode Model
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Double-sheet Charge ModelDouble-sheet Charge Model
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Two-sheet Charge Model Band DiagramTwo-sheet Charge Model Band Diagram
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Two-sheet Charge Model Equivalent Circuit
Two-sheet Charge Model Equivalent Circuit
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Two-sheet Charge ModelTwo-sheet Charge Model1. Emission Mechanisms
– Field emission (pure tunneling)
– Thermal emission– Trap-to-band impact ionization
2. Charge CaptureThe probability that an electron crossing a sheet of charge is captured depends on:– Electric field at the sheet– Occupancy of the sheet
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Two-sheet Charge ModelTwo-sheet Charge ModelSpace Charge Creation via Field Emission
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Two-sheet Charge ModelTwo-sheet Charge ModelSpace Charge Creation via Trap-band Impact Ionization
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Two-sheet Charge Model: Static Space Charge
Two-sheet Charge Model: Static Space Charge
• Ionized traps are not allowed to refill
• B= 1.5 V (experimental value)
• Bulk trap depth = 1.38 V
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Transferred Charge Capacitance Overshoot (Two-sheet charge model)
Fowler-Nordheim Diode model
Experimental Data
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ConclusionsConclusions
Fowler-Norheim Diode• Simple yet accurate SPICE model for
devices without space charge
Two-sheet Charge Model• Demonstrates mapping of device
physics to SPICE• Large amounts of C-V overshoot in
SPICE