a fine-grained component-level power measurement method

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A Fine-grained Component- level Power Measurement Method Zehan Cui, Yan Zhu, Yungang Bao, Mingyu Chen Institute of Computing Technology, Chinese Academy of Sciences July 28, 2011

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A Fine-grained Component-level Power Measurement Method. Zehan Cui, Yan Zhu, Yungang Bao , Mingyu Chen Institute of Computing Technology, Chinese Academy of Sciences July 28, 2011. Outline. Motivation Design & Implementation Experiments Conclusion & Work in Progress. Outline. - PowerPoint PPT Presentation

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Page 1: A Fine-grained Component-level Power Measurement Method

A Fine-grained Component-level Power Measurement

Method

Zehan Cui, Yan Zhu,Yungang Bao, Mingyu Chen

Institute of Computing Technology, Chinese Academy of SciencesJuly 28, 2011

Page 2: A Fine-grained Component-level Power Measurement Method

Motivation

Design & Implementation

Experiments

Conclusion & Work in Progress

Outline

Page 3: A Fine-grained Component-level Power Measurement Method

Motivation

Design & Implementation

Experiments

Conclusion & Work in Progress

Outline

Page 4: A Fine-grained Component-level Power Measurement Method

Watts/Server

[source: The Problem of Power Consumption in Servers,Intel,2009]

CPU no longer dominates the system power.

Background

[source: Barroso et. al. , The datacenter as a computer, 2009]

Page 5: A Fine-grained Component-level Power Measurement Method

Measurement is the basis.

Motivation

Low power

Hardware

Software

model

measurement

Page 6: A Fine-grained Component-level Power Measurement Method

Component-Level: ATX-based method

Existing Measurement Method

accuracy

Directly powered through ATX wires.

Modern motherboards mostly have dedicated ATX wires for processor.VRM (Voltage Regulation Module) loss

Usually deduced from multi ATX wires. Platform dependent.

Page 7: A Fine-grained Component-level Power Measurement Method

Motivation

Design & Implementation

Experiments

Conclusion & Work in Progress

Outline

Page 8: A Fine-grained Component-level Power Measurement Method

CPU

Disk

Power Supply

Disk & CPU◦ Similar to other ATX-based methods

Memory & Add-in Card Devices◦ Wrapper-based methods

Advantages◦ Accurate: direct measurement◦ Easy-to-use: no deduction needed◦ Portable: multi-platform

Our Solution: A Hybrid Way

wrapperMemory

X

Current Sensor

Page 9: A Fine-grained Component-level Power Measurement Method

Prototype◦ Disk power◦ CPU power◦ Memory power

Implementation

Component Count DescriptionWrapper Card 1 Memory power measurement.

• Support DDR2-400 DIMM.Intermediate Card

1 8 channels. • A channel is capable of converting one current into voltages.

DMM 2 Agilent 34411A. • One channel each.• Max speed: 50K samples per second. • LAN interface.

Collector 1 PC• Collect data from DMM.

Page 10: A Fine-grained Component-level Power Measurement Method

Motivation

Design & Implementation

Experiments

Conclusion & Work in Progress

Outline

Page 11: A Fine-grained Component-level Power Measurement Method

Component Detail

CPU Intel Core2 Duo E4500# of Cores: 2Clock Speed: 2.2GHzL2 Cache: 2MBFSB Speed: 800MHz

Memory DDR2-400 2GB UDIMMFrequency: 200MHzMax Bandwidth: 3.2GB/s

Disk 640GB SATA

Experimental Setup

Page 12: A Fine-grained Component-level Power Measurement Method

401.bzip2 from SPECCPU2006

An Example

0 10 20 30 40 50 60 700

5

10

15

20

25

30

35

40

45

50

Time from Beginning (unit: Second)

Pow

er o

f Com

pone

nts

(u

nit:

Wat

t)

Memory DiskCPU

Page 13: A Fine-grained Component-level Power Measurement Method

More frequently we measure the power, more details we can get.

Time Granularity

Observation:5,000 samples/s is an appropriate sample frequency at

component level.

Page 14: A Fine-grained Component-level Power Measurement Method

Graph BFS (Breadth First Search) Higher BW,

but lower Power

Lower BW, Higher Power

Page 15: A Fine-grained Component-level Power Measurement Method

Microbenchmark

Time: 6.5 times longer

Power: slightly lower Energy: 5.9 times higher

Malloc 512MB

Access in different strides

Two causes◦ Row conflict◦ Lots of TLB miss

increase row buffer hit rate large page may be more efficient

What is the relationship between performance and power?

Page 16: A Fine-grained Component-level Power Measurement Method

64MB memory◦ Random vs. Sequential

Jump at least 64B eliminate cache hit

Large page(2MB) eliminate TLB miss

Load/Sotre_Unit % = LSU_stall_time/CPU_Cycle

Random vs. Sequential

Observation:It seems that DRAM power is already proportional to bandwidth. But the fact is that …

Page 17: A Fine-grained Component-level Power Measurement Method

Use different SEEDs to generate different random access patterns;

Power varies less than 1.1%.

Random Access

Observation:DRAM power is highly correlated to two factors• Load/Store Unit Utilization• Sequential / Random

We can build memory power models based on the two factors rather than Bandwidth.

Page 18: A Fine-grained Component-level Power Measurement Method

Motivation

Design & Implementation

Experiments

Conclusion & Work in Progress

Outline

Page 19: A Fine-grained Component-level Power Measurement Method

We use a hybrid approach ◦ ATX-Based CPU/Disk◦ Wrapper card DRAM/…

5KHz is an appropriate sampling frequency to disclose fine-grain power behavior.

DRAM power is highly correlated to Load/Store Unit Utilization, rather than Bandwidth.

Takeaway Messages (Conclusions)

Page 20: A Fine-grained Component-level Power Measurement Method

Upgrade current system◦ Support DDR3◦ Support Large memory capacity◦ Support 40 simultaneous measuring channels

Use FPGA to collect measured data

Correlate the measured power data with high-level semantics information

Work in progress

Page 21: A Fine-grained Component-level Power Measurement Method

Thanks!&

Questions?

Page 22: A Fine-grained Component-level Power Measurement Method

Backup

Page 23: A Fine-grained Component-level Power Measurement Method

Wrapper Card already exists

We only did several small modifications

Wrapper Card Design

Current Sensor

Power Supply Signals

Page 24: A Fine-grained Component-level Power Measurement Method

Memory Capacity Limitation

DIMM slot Motherboard

DIMM: Dual-Inline Memory Module

Normal

Page 25: A Fine-grained Component-level Power Measurement Method

With our initial wrapper card

Memory Capacity Limitation

DIMM slot Motherboard

DIMM

Wrapper Card

Page 26: A Fine-grained Component-level Power Measurement Method
Page 27: A Fine-grained Component-level Power Measurement Method
Page 28: A Fine-grained Component-level Power Measurement Method

28

Inside a DRAM Device

Bank 0

Sense AmpsColumn Decoder

Row

Deco

der ODT

Recie

ver

sDr

ive

rs

Regi

ster

s

Writ

e FI

FO

Banks• Independent

arrays• Asynchronous:

independent of memory bus speed

I/O Circuitry• Runs at bus speed• Clock sync/distribution• Bus drivers and receivers• Buffering/queueing

On-Die Termination• Required by bus electrical

characteristicsfor reliable operation

• Resistive element that dissipates power when bus is active

[Source: H. David et. al., Memory Power Management viaDynamic Voltage/Frequency Scaling, ICAC, 2011]

Page 29: A Fine-grained Component-level Power Measurement Method

Can be approximately divided into◦ Background power

considered to be stable◦ Bank power

active/precharge Related to frequency of row operation

◦ I/O power Burst proportional to bandwidth

◦ Termination power Termination resistors Proportional to bandwidth

DRAM power

Page 30: A Fine-grained Component-level Power Measurement Method

Current Sensor

P = U * I

ADCor

DMMCSA

(Current-Sense Amplifier)

DC Voltage

DC Voltage

DC Current

Doesn’t fluctuate too much, less than 2% in our platform.

Collector

(PC)

Data

Page 31: A Fine-grained Component-level Power Measurement Method

Possible reason for non-proportional of random power in slide17: ◦ When bandwidth is low, auto-precharge (caused

by refresh) cause every access needs ACTIVE; the bank power is proportional to bandwidth.

◦ When bandwidth is high, some access may hit in the row buffer, which need less ACTIVE; the slope of bank power increase is lower than before.

DRAM power