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Thermal Characteristics

FQD11P06 / FQU11P06P-Channel QFET® MOSFET-60 V, -9.4 A, 185 mΩ

Description

www.fairchildsemi.com1

FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications..

Features• -9.4 A, -60 V, RDS(on) = 185 mΩ (Max.) @ VGS = -10 V,

ID = -4.7 A

• Low Gate Charge (Typ. 13 nC)

• Low Crss (Typ. 45 pF)

• 100% Avalanche Tested

Absolute Maximum Ratings TC = 25°C unless otherwise noted.

Symbol Parameter FQD11P06TM / FQU11P06TU UnitVDSS Drain-Source Voltage -60 VID Drain Current - Continuous (TC = 25°C) -9.4 A

- Continuous (TC = 100°C) -5.95 AIDM Drain Current - Pulsed (Note 1) -37.6 AVGSS Gate-Source Voltage ± 30 VEAS Single Pulsed Avalanche Energy (Note 2) 160 mJIAR Avalanche Current (Note 1) -9.4 AEAR Repetitive Avalanche Energy (Note 1) 3.8 mJdv/dt Peak Diode Recovery dv/dt (Note 3) -7.0 V/nsPD Power Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 38 W- Derate above 25°C 0.3 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering, 1/8" from case for 5 seconds

300 °C

Symbol Parameter FQD11P06TM /FQU11P06TU

Unit

RJC Thermal Resistance, Junction to Case, Max. 3.28oC/W

RJAThermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50

©2000 Fairchild Semiconductor Corporation FQD11P06 / FQU11P06 Rev. C2

GD

S

I-PAKD-PAKG

S

D

G

S

D

Package Marking and Ordering Information


FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

Electrical Characteristics TC = 25°C unless otherwise noted.

Part Number Top Mark Package Reel Size Tape Width QuantityFQD11P06FQD11P06TM D-PAK 330 mm 16 mm 2500 units

Packing MethodTape and Reel

Notes:1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 2.1 mH, IAS = -9.4 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C.3. ISD ≤ -11.4 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.4. Essentially independent of operating temperature.

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -60 -- -- V∆BVDSS / ∆TJ

Breakdown Voltage Temperature Coefficient

ID = -250 µA, Referenced to 25°C -- -0.07 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = -60 V, VGS = 0 V -- -- -1 µAVDS = -48 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = -10 V, ID = -4.7 A -- 0.15 0.185 Ω

gFS Forward Transconductance VDS = -30 V, ID = -4.7 A -- 4.9 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 420 550 pFCoss Output Capacitance -- 195 250 pFCrss Reverse Transfer Capacitance -- 45 60 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = -30 V, ID = -5.7 A,

RG = 25 Ω

(Note 4)

-- 6.5 25 nstr Turn-On Rise Time -- 40 90 nstd(off) Turn-Off Delay Time -- 15 40 nstf Turn-Off Fall Time -- 45 100 nsQg Total Gate Charge VDS = -48 V, ID = -11.4 A,

VGS = -10 V (Note 4)

-- 13 17 nCQgs Gate-Source Charge -- 2.0 -- nCQgd Gate-Drain Charge -- 6.3 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -9.4 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -37.6 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -9.4 A -- -- -4.0 Vtrr Reverse Recovery Time VGS = 0 V, IS = -11.4 A,

dIF / dt = 100 A/µs -- 83 -- ns

Qrr Reverse Recovery Charge -- 0.26 -- µC


FQU11P06FQU11P06TU I-PAK N/A N/A 70 unitsTube


FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFETTypical Characteristics

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.010-1

100

101

150※ Notes :

1. VGS = 0V2. 250µs Pulse Test

25

-I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

-VSD , Source-Drain Voltage [V]0 01 20 03 04 50

0.0

0.2

0.4

0.6

0.8

※ Note : TJ = 25

VGS = - 20V

VGS = - 10V

RD

S(on

) [Ω

],D

rain

-Sou

rce

On-

Res

ista

nce

-ID , Drain Current [A]

2 6 84 1010-1

100

101

150

25

-55※ Notes : 1. VDS = -30V2. 250µs Pulse Test

-I D ,

Dra

in C

urre

nt [

A]

-VGS , Gate-Source Voltage [V]10-1 0 101

10-1

100

101

VGSTop : - 15.0 V

- 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V

Bottom : - 4.5 V

※ Notes :1. 250µs Pulse Test 2. TC = 25

-I D, D

rain

Cur

rent

[A]

10

-VDS, Drain-Source Voltage [V]

0 2 4 6 8 10 12 140

2

4

6

8

10

12

VDS = -30V

VDS = -48V

※ Note : ID = -11.4 A

-VG

S, G

ate-

Sour

ce V

olta

ge [V

]

QG, Total Gate Charge [nC]10-1 100 1010

200

400

600

800

1000

1200Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

※ Notes : 1. VGS = 0 V 2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]


Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics



FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFETTypical Characteristics (Continued)

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 11 0 -2

1 0 -1

1 0 0

N o te s :※

1 . Z θ J C( t ) = 3 .2 8 /W M a x . 2 . D u ty F a c to r , D = t1/ t 2

3 . T J M - T C = P D M * Z θ J C( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

25 50 75 100 125 1500

2

4

6

8

10

-I D, D

rain

Cur

rent

[A]

TC, Case Temperature []100 101 102

10-1

100

101

102

DC

10 ms

1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC3. Single Pulse

-I D, D

rain

Cur

rent

[A]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

※ Notes : 1. VGS = -10 V 2. ID = -4.7 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. VGS = 0 V 2. ID = -250 µA

-BV D

SS,

(Nor

mal

ized

)D

rain

-Sou

rce

Brea

kdow

n Vo

ltage

TJ, Junction Temperature [oC]


Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]



FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VVDSDS

VVGSGS1010%%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ofofff)) ttffVVDDDD

VVDSDS

RRLL

DUTDUT

RRGG

VVGSGS

ChChargargee

VVGSGS

QQgg

QQgsgs QQgdgdVVGSGS

DUDUTT

VVDSDS

300300nFnF

50K50KΩΩ

200n200nFF12V12V

SamSamee T Tyypepeas as DUDUTT

EEEAS AS AS ----=== 21212121------------ LLL ASASASIII

BVBVDSDSSS222 ----------------------------------------

BVBVDSDSSS - V- VDDDD

VVDDDD

VVDSDS

BVBVDSSDSS

t t pp

VVDDDD

IIASAS

VVDS DS (t)(t)

IID D (t(t))

TiTimmee

DUDUTT

RRGG

LLL

III DDD

t t pp

IG = const.

VVGSGS

VVGSGS



FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

••

DUTDUT

VVDSDS

++

__

DrivDrivererRRGG

ComCompplliimmentent ofof DUTDUT (N-(N-CChannelhannel))

VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG

IISDSD ccononttrrolollleded byby pupullsse e peperriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

( ( DrivDriver er ))

II SDSD

( ( DUT DUT ))

VVDSDS

( ( DUT DUT ))

VVDDDDBoBodydy DDiiooddee

ForForwward ard VVololttagage e DrDropop

IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt

VVSDSD

BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt

IIRMRM

BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt

didi//dtdt

D D D === ---------GateGateGate--------------------------- PPPulululsss------------------------e e e WWWiiiddd---------------ttthhh---GaGaGate te te PuPuPulllssseee PePePerrriiiododod



FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

Mechanical Dimensions


Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any mannerwithout notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify orobtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003


FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET

Mechanical Dimensions


Figure 17. TO251 (I-PAK), Molded, 3-LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any mannerwithout notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify orobtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003


TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

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QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

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Rev. I66

tm

®

FQD

11P06 / FQU

11P06 — P-C

hannel QFET

® MO

SFET


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