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Transistors

6240-15-1E ITT INTERMETALL

2 ITT INTERMETALL

All information and data contained in this data book are with-out any commitment, are not to be considered as an offerfor conclusion of a contract nor shall they be construed asto create any liability. Any new issue of this data book, orindividual product data sheets, invalidate previous issues.Product availability and delivery dates are exclusively sub-ject to our respective order confirmation form; the sameapplies to orders based on development samples delivered.By this publication, INTERMETALL does not assume respon-sibility for patent infringements or other rights of third partieswhich may result from its use.Reprinting is generally permitted, indicating the source.However, our prior consent must be obtained in all cases.

Printed in GermanyImprimé dans la République Fédérale d’Allemagne byRombach GmbH Druck- und Verlagshaus, 79115 Freiburg

Edition September 1996 • Order No. 6240-15-1E

ITT INTERMETALL 3

Page Contents

195 to 199 Bias Resistor Transistors

201 to 204 Addresses

Alphanumerical List of Types

4 List of Types

189 to 193 Darlington Transistors

5 to 17 Technical Information

19 to 65 Small-Signal Transistors (NPN)

67 to 113 Small-Signal Transistors (PNP)

115 to 157 DMOS Transistors (N-Channel)

159 to 187 DMOS Transistors (P-Channel)

4 ITT INTERMETALL

Type Page

Small-Signal Transistors(NPN)

2N3904 202N4124 24BC337-16, -25, -40 30BC338-16, -25, -40 30BC546-A, -B 36BC547-A, -B, -C 36BC548-A, -B, -C 36BC549-B, -C 36BC817-16, -25, -40 42BC818-16, -25, -40 42BC846-A, -B 48BC847-A, -B, -C 48BC848-A, -B, -C 48BC849-B, -C 48BF420 54BF422 54BF820 56BF822 56MMBT3904 58MMBTA42 62MMBTA43 62MPSA42 64MPSA43 64

DMOS Transistors(N-Channel)

2N7000 1162N7002 122BS108 128BS109 134BS123 136BS170 138BS623 136BS809 144BS828 146BS870 152

Darlington Transistors

BCV27 190BCV26 192

Type Page

Small-Signal Transistors(PNP)

2N3906 682N4126 72BC327-16, -25, -40 78BC328-16, -25, -40 78BC556-A, -B 84BC557-A, -B, -C 84BC558-A, -B, -C 84BC559-A, -B, -C 84BC807-16, -25, -40 90BC808-16, -25, -40 90BC856-A, -B 96BC857-A, -B, -C 96BC858-A, -B, -C 96BC859-A, -B, -C 96BF421 102BF423 102BF821 104BF823 104MMBT3906 106MMBTA92 110MMBTA93 110MPSA92 112MPSA93 112

DMOS Transistors(P-Channel)

BS208 160BS209 166BS223 168BS250 170BS723 176BS808 178BS829 180BS850 182

Bias Resistor Transistors

DTC114EK 196DTC124XK 198

List of Types

ITT INTERMETALL 5

Technical Information

6 ITT INTERMETALL


Index of Symbols

b Imaginary part of y-Parametersbf Imaginary part of forward

transconductance yfbi Imaginary part of input admittance yibo Imaginary part of output admittance yobr Imaginary part of reverse

transconductance yrB Base connectionBG Imaginary part of generator (source)

impedanceC Capacitance; junction capacitance;

collector connectionCi Input capacitance (bi/2 π f)Co Output capacitance (bo/2 π f)CCBO Collector-Base capacitance (open emitter)CEBO Emitter-base capacitance (open collector)Ciss Input capacitanceCr Feedback capacitance (br/2 π f)E Emitter connectionf FrequencyfT Gain-bandwidth productF Noise figureFc Noise figure in mixer stagesg Real part of y-parametersgf Real part of forward transconductance yfgi Real part of input admittance yigm Forward transconductancego Real part of output admittance yogr Real part of reverse transconductance yrgs Generator conductanceGC Current gainGP Power gainGP av Available power gainGP max Max. available power gainGV Voltage gainh Parameters of h- (hybrid) matrixhf Small-signal current gainhi Input impedanceho Output admittancehr Reverse voltage transfer ratiohFE DC current gain, common emitterIB Base currentIBM Peak base currentIB1 Turn-on currentIB2 Turn-off currentIC Collector currentICAV Average collector currentICBO Collector-base cutoff current (open emitter)ICEO Collector-emitter cutoff current (open base)ICER Collector-emitter cutoff current (specified

resistance between base and emitter)

ICES Collector-emitter cutoff current (base short-circuited to emitter)

ICEV Collector-emitter cutoff current (specified voltage between base and emitter)

ICM Peak collector currentID Drain currentIDSS Drain cutoff currentIE Emitter currentIEBO Emitter-base cutoff current (open collector)IGSS Gate-body leakage currentKV Thermal resistance correction factorPtot Power dissipationPD Continuous power dissipationPI Pulse power dissipationrb’ · CC Collector-base time constantrDS (ON) Drain-source-on resistancerthA Pulse thermal resistance junction

to ambient airrthC Pulse thermal resistance junction to caseR Resistance; resistorRBE Resistance between base and emitterRG Generator impedance; source impedanceRG opt Optimum (matched) generator resistanceRL Load resistanceRL opt Optimum (matched) load resistanceRS Series resistanceRth Thermal resistanceRthA Thermal resistance junction to ambient airRthC Thermal resistance junction to case

resp. mounting baseRthC/S Thermal resistance case or mounting base

to heat sinkRthS Thermal resistance heat sink to ambient airt Timetd Delay timetf Fall Timetoff Turn-off time (ts + tf)ton Turn-on time (td + tr)tp Pulse durationtpd Propagation delay timetr Rise timets Storage timettotal Total switching time (ton + toff)T Temperature; duration of one periodTamb Ambient temperatureTj Junction temperatureTC Case temperatureTS Storage temperatureTSB Temperature of substrate backsideV VoltageVBB Base supply voltageVBE Base-emitter voltageVBE sat Base-emitter saturation voltage

ITT INTERMETALL 7


V(BR)CBO Collector-base breakdown voltage(open emitter)

V(BR)CEO Collector-emitter breakdown voltage(open base)

V(BR)CER Collector-emitter breakdown voltage(specified resistance between base and emitter)

V(BR)CES Collector-emitter breakdown voltage(emitter short-circuited to base)

VDGS Drain-gate voltageVDSS Drain-source voltageV(BR)DSS Drain-source breakdown voltageV(BR)EBO Emitter-base breakdown voltage

(open collector)VCB Collector-base voltageVCBO Collector-base voltage (open emitter)VCC Collector supply voltageVCE Collector-emitter voltageVCEO Collector-emitter voltage (open base)VCER Collector-emitter voltage (specified

resistance between base and emitter)VCES Collector-emitter voltage (emitter short-

circuited to base)VCE sat Collector-emitter saturation voltageVCEV Collector-emitter voltage (specified voltage

between base and emitter)VEBO Emitter-base voltage (open collector)VEE Emitter supply voltageVGS(TO) Gate threshold voltageVi Input voltageVo Output voltagey Parameters of y- (admittance) matrixyf Forward transconductanceyi Input admittanceyo Output admittanceyr Reverse transconductanceys Generator admittanceZ1 Input impedanceZ2 Output impedanceϕ Phase angle of y-parametersτs Storage time constantν Duty cycle (tp/T)

8 ITT INTERMETALL


Characteristics and Maximum Ratings

The electrical performance of a semiconductor deviceis usually expressed in terms of its characteristics andmaximum ratings.

Characteristics are those which can be measured byuse of suitable measuring instruments and circuits,and provide information on the performance of thedevice under specified operating conditions (at a givenbias, for example). Depending on requirements, theyare quoted either as typical (Typ.) values or guaranteed(Min., Max.) values.

Typical values are expressed as figures or as one ormore curves, and are subject to spreads. Occasionallya typical curve is accompanied by another curve, thisbeing a 95%, or, in a few cases, a maximum spreadlimit curve.

Maximum Ratings give the values which cannot beexceeded without risk of damage to the device.Changes in supply voltage and in the tolerances ofother components in the circuit must also be taken intoconsideration. No single maximum rating should everbe exceeded, even when the device is operated wellwithin the other maximum ratings. The inclusion of theword “admissible” in a title means that the associatedcurve defines the maximum ratings.

An exception to this rule are data on collector current.The collector current, quoted as one of the criticaltransistor values, is a maximum value recommendedby the manufacturer which should be noted in connec-tion with the other characteristics valid for this collec-tor current (e.g. collector and saturation voltages,current gain etc.) when selecting a transistor. In certaincases, the quoted collector current may be exceededwithout the transistor being destroyed. The absolutelimit for the collector current is determined by themaximum admissible power dissipation of the tran-sistor.

Assembly and Soldering Instructions

To prevent transistors from being damaged duringmounting, observe the following points:

All semiconductor devices are extremely sensitive totheir maximum admissible junction temperature beingexceeded. When planning the layout of the equipment,the distance between heat sources and semiconduc-tor elements should be sufficiently large.

Semiconductor elements may be mounted in anydesired position.

From the experience gained in soldering semiconduc-tor elements the following rules have emerged:

For transistors in plastic case TO-92 the maximum sol-dering time is 8 s, at soldering temperatures between230 and 260 °C. Here, the distance between solderedjoint and case should be at least 4 mm. During solder-ing, the leads should not be subjected to mechanicalstress.

For transistors in plastic case SOT-23 the maximumsoldering time is 8 s, at maximum soldering tempera-tures between 230 and 260 °C.


Admissible Power Dissipation

The indicated maximum admissible junction temper-ature must not be exceeded because this coulddamage or cause the destruction of the transistorcrystal. Since the user cannot measure this temper-ature, data sheets also reveal the maximum admissiblepower dissipation Ptot usually in the form of a deratingcurve (see diagram).

If power dissipation is kept within these limits themaximum junction temperature will not be exceeded.This can easily be checked by using the equation

Tj = Tamb + Ptot · Rth

ITT INTERMETALL

Admissible power dissipationversus ambient temperature

mW500

Ptot

300

200

10000

100

Tamb

200 °C

400

For the thermal resistance Rth the junction to ambientthermal resistance RthA is usually substituted in thecase of small transistors (in the TO-18 or TO-92 pack-age). In the case of power transistors (in the TO-202 orsimilar packages) which are usually mounted on a cool-ing fin or heat sink for the purpose of heat dissipation,the sum of the junction to case thermal resistance RthCplus the heat sink to ambient thermal resistance RthSplus – for more accurate calculations – the mountingsurface to heat sink thermal resistance, is substitutedfor the thermal resistance in this equation. In order tokeep the mounting surface to heat sink thermal resis-tance low, a heat conducting compound (siliconegrease) is to be applied to the mounting surface beforethe transistor is screwed on. If a mica insulation isused, the thermal resistance of the mica washer mustbe added, which amounts to about 0.5 K/W.

Directions for determining the thermal resistance RthSfor cooling fins can be found on page 11.

Since the distribution of heat in the transistor crystal isnot uniform and depends on voltage and current,some transistors are accompanied by derating curvesshowing Ptot as a function of TC and Tamb with the col-lector voltage VCE as parameter (see diagram below).

VCE

8 V

Admissible power dissipationversus temperature

W5

Ptot

3

2

10000

1

Tamb,

200 °C

4

TC

thAR = 200 K/W

40 V

20 V

10 V

= 0...7 V

RthC = 35 K/W

9

10 ITT INTERMETALL


For some power transistors the data sheets also con-tain a diagram giving “admissible collector current” or“permissible operating range” which gives furtherinformation on admissible power dissipation. Oneexample is illustrated in the diagram left.

These diagrams are based on continuous power dissi-pation. However, pulse power dissipation may usuallyexceed continuous power dissipation. To ascertainmaximum admissible pulse power dissipation PI, refer-ence is made to the pulse junction to case thermalresistance rthC or the pulse junction to ambient thermalresistance rthA whose value can be derived from therth = f(tp) diagram below.

Use the equation

Tj = Tamb + PI · rthA

or, if the continuous power dissipation PD is to betaken into consideration:

Tj = Tamb + PD · RthA + PI · rthA

If the transistor is mounted on a cooling fin then theequation becomes:

Tj = Tamb + Ptot · RthS + PI · rthC

wherein Ptot is the mean value of the pulse power dis-sipation PI. Where continuous power dissipation mustbe considered in addition, the equation is expandedaccordingly:

Tj = Tamb + Ptot · RthS + PD · RthC + PI · rthC

wherein Ptot is the mean value of the total power dissi-pation.

The thermal resistance and pulse thermal resistancevalues derived from the data sheets apply without limi-tation only to small collector-emitter voltages VCE,between about 5 and 10 V. For higher voltages thesethermal resistance values have to be multiplied by acorrection factor KV which has to be calculated fromthe previously mentioned derating curves. The admis-sible power dissipation Ptot max, applicable to low col-lector voltages, must be divided by the admissiblepower dissipation Ptot V for the higher collector voltageV:

The complete equation for Tj then reads:

Tj = Tamb + Ptot · RthS + PD · KV · RthC + PI · KV · rthC

KvPtot maxPtot V

-----------------=

Pulse thermal resistanceversus pulse duration

K/W

rthC

1

tp

2

103

5

102

5

2

10

5

2

5

2

10-1

10-6 10-4 10-2 1 10 s2

0.5

0.1

0.05

0.02

0.01

tpν = tp

T PI

T

ν = 0

10-5 10-3 10-1 10

0.2

0.005

10

5

5

1011

2

V10 V

2

2

10

2 5 2 52

* for single nonrepetitive pulse

TC = 25 °C

ICmax (continuous)

50 µs100 µs

1 ms= 100 mstp

DC Operation

Admissible collector currentversus collector emitter voltage

A

IC

CE

Pulse Operation* 30 µs

ITT INTERMETALL 11


Heat Removal from Transistors

The operation of any semiconductor device involvesthe dissipation of power with a consequent rise injunction temperature. Because the maximum admis-sible junction temperature must not be exceeded,careful circuit design with due regard not only to theelectrical, but also the thermal performance of a semi-conductor circuit, is essential.

If the dissipated power is low, then sufficient heat isradiated from the surface of the case; if the dissipationis high, however, additional steps may have to betaken to promote this process by reducing the thermalresistance between the junction and the ambient air.This can be achieved either by pushing a star- or flag-shaped heat dissipator over the case, or by bolting thesemiconductor device to a heat sink.

P, the power to be dissipated, Tj the junction tempera-ture, and Tamb, the ambient temperature are related bythe formula

where RthA is the total thermal resistance betweenjunction and ambient air. The total thermal resistancein turn comprises an internal thermal resistance RthCbetween the junction and the mounting base, and anouter thermal resistance RthS between the case andthe surrounding air (or any other cooling medium). Itshould be noted that only the outer thermal resistanceis affected by the design of the heat sink. To determinethe size of the heat sink required to meet given operat-ing conditions, proceed as follows: First calculate theouter thermal resistance by use of the formula

and then, by use of the diagrams, determine the size ofthe heat sink which provides the calculated RthS-value.To determine the maximum admissible device dissipa-tion and ambient temperature limit for a given heatsink, proceed in the reverse order to that describedabove.

The calculations are based on the following assump-tions: Use of a squareshaped heat sink without anyfinish, mounted in a vertical position; semiconductordevice located in the centre of the sink; heat sinkoperated in still air and not subjected to any additionalheat radiation. The calculated area should be in-creased by a factor of 1.3 if the sink is mounted hori-zontally, and can be reduced by a factor of approxi-mately 0.7 if a black finish is used.

The curves give the thermal to ambient resistance ofsquare vertical heat sinks as a function of side length.It is assumed that the heat is applied at the center ofthe square.

PTj Tamb–

RthA--------------------

Tj Tamb–

RthC RthS+--------------------------= =

RthSTj Tamb–

P-------------------- RthC–<

Aluminium Cooling Fin

K/W100

RthS

7

1001

Length of edge S20 cm

Al

70

504030

20

10

54

3

2

2 4 6 8 12 14 16 18

1

52

0.5

Thickness mm

Steel Cooling Fin

K/W100

RthS

7

1001

Length of edge S20 cm

Fe

70

504030

20

10

54

3

2

2 4 6 8 12 14 16 18

1

5

2

0.5

Thickness mm

12 ITT INTERMETALL


Basic Circuits

There are three basic transistor circuits. They arecalled according to that electrode (emitter, base, col-lector) which is common to both input and output cir-cuit.

Common Emitter

Common Base

Common Collector

Properties of the three basic circuits:

CommonEmitter

CommonBase

CommonCollector

Inputimpedance medium small high

Outputimpedance medium high small

Current gain high less than 1 high

Upperfrequency limit low high low

Four-Pole-Symbols of h-Matrix

A transistor can be considered as an active four-polenetwork. When driven with small low-frequency signalsits properties can be described by the four character-istic values of the h- (hybrid) matrix, which are as-sumed to be real.

v1 = hi · i1 + hr · v2

i2 = hf · i1 + ho · v2

If expressed this in matrix form we obtain:

Explanation of h-Parameters

Input impedance (shorted output, v2 = 0):

Reverse voltage transfer ratio (open input, i1 = 0):

Small-signal current gain (shorted output, v2 = 0):

Output admittance (open input, i1 = 0):

A frequently used abbreviation is the determinant:

∆h = hi · ho – hr · hf

For all three basic circuit configurations the circuitillustrated below represents the equivalent four-polecircuit using h-parameters.

In the transistor data sheets the h-parameters areusually quoted for the common emitter configurationand for a given operating point (bias). The latter isdetermined by the collector voltage, the emitter or col-lector current and by the ambient temperature. For dif-ferent operating points, correction factors are neededwhich can be gathered from the relevant curves. Forcommon base or common collector transistor stagecalculations, the appropriate h-parameters are ascer-tained from those of the common emitter configurationby using the following conversion formulas.

v1i2

h( )i1v2

""dfoisdufoifus h( )hiahrhfaho

= =

hiv1i1----=

hrv1v2----=

hfi2i1---=

hoi2v2----=

v1

i1

i2

v2

v1

i1 i2

v2

v1

i1

i2

v2

v1

i1 i2

v2Transistor

four pole

v1

i1 i2

v2hf · i1hr · v2

hohi

13 ITT INTERMETALL

CommonEmitter

CommonBase

CommonCollector

Input impedance hie –hic = hie

Reverse voltage transfer ratio hre –hrc = 1 – hre

Small-signal current gain hfe –hfc = 1 + hfe

Output admittance hoe –hoc = hoe

hibhie

1 hfe+---------------=

hrbhie hoe⋅

1 hfe+------------------ hre–=

hfbhfe

1 hfe+---------------–=

hobhoe

1 hfe+---------------=


Calculation of a Transistor Stage

Input impedance

Output impedance

Current gain

Voltage gain

Power gain

Max. available power gain, input and output matchedwith RG opt resp. RL opt

Z1v1i1----

hi RL hD⋅+

1 ho RL⋅+-------------------------= =

Z2v2i2----

hi RG+

hD ho RG⋅+---------------------------= =

Gci2i1---

hf1 ho RL⋅+-----------------------= =

Gvv2v1----

hf– RL⋅

hi RL hD⋅+-------------------------= =

Gpv2 i2⋅

v1 i1⋅------------

hf2 RL⋅

1 ho RL⋅+( ) hi RL hD⋅+( )---------------------------------------------------------= =

Gp max

hf

hD hi ho⋅+--------------------------------

2

=

RG opthi hD⋅

ho--------------= RL opt

hiho hD⋅---------------=

Four-Pole Symbols of y-Matrix

Whereas the network behaviour of of low-frequencytransistors could be described by using the h- (hybrid)matrix, the y- (admittance) matrix is usually employedfor high frequency transistors.

i1 = yi · v1 + yr · v2

i2 = yf · v1 + yo · v2

In matrix form we obtain:

The y-parameters are complex values which can beexpressed as

yik = gik + jbik with bik = ωCik or with bik =

Often, the following notation is expedient:

yik = l yik l exp jϕik

By adding the suffix e, b, or c it is possible to indicateto which of the three basic circuit configurations theparameters are valid.

Explanation of y-Parameters

Input admittance (shorted output, v2 = 0)

Reverse transconductance (shorted input, v1 = 0)

i1

i2

y( )=V1

V2

y( )yi yryf yo

=

1

ωLik---------–

yii1v1----=

yri1v2----=

v1 v2Transistor

four poleZ1

RG

Z2RL

i1 i2

v1

i1 i2

v2Transistorfour pole

v1

i1 i2

v2

y r· v

2y f

· v1

yoyi

14 ITT INTERMETALL


Forward transconductance (shorted output, v2 = 0)

Output admittance (shorted input, v1 = 0)

The determinant reads Dy = yi · yo – yr · yf

Conversion from y-Parameters to h-Parameters

Calculation of a Transistor Stage

Input impedance

Output impedance

Current gain

Voltage gain

Power gain

Available power gain, input matched with RG opt

Max. available power gain, input and output matchedwith RG opt resp. RL opt

Max. available power gain will be attained if input andoutput are matched, where:

and:

Dy = yi · yo – yr · yf

yfi2v1----=

yoi2v2----=

hi1yi---= hr

yryi----–= hD

yoyi-----=

hfyfyi---= ho

yD

yi------=

Z1v1i1----

1 yo RL⋅+

yi yD RL⋅+-------------------------= =

Z2v2i2----

1 yi RG⋅+

yo yD RG⋅+---------------------------= =

Gci2i1---

yfyi yD RL⋅+-------------------------= =

Gvv2v1----

yf– RL⋅

1 yo RL⋅+-----------------------= =

Gpv2 i2⋅

v1 i1⋅------------

yf2 RL⋅

1 yo RL⋅+( ) yi yD RL⋅+( )---------------------------------------------------------= =

Gp av4 yf

2 RG RL⋅ ⋅ ⋅

y1 yD RL) RG 1 yo RL⋅+ +⋅ ⋅+([ ]2--------------------------------------------------------------------------=

Gp maxyf

yD yi yo⋅+-------------------------------

2

=

RL optyoyi----- 1

yD------⋅=

RG optyiyo----- 1

yD------⋅=

v1

i1 i2

v2Transistor

four poleZ1

RGZ2 RL

ITT INTERMETALL 15


Switching Times

Definitions for the various times which make up thetotal switching time can be gathered from the diagrambelow in which the switching characteristic of a tran-sistor in common-emitter configuration is illustrated.

td Delay timetr Rise timets Storage timetf Fall timeton = td + tr Turn-on timetoff = ts + tf Turn-off time

The duration of the switching times depends upon thetransistor type and very much on the circuit arrange-ment.

With increasing saturation of the transistor the turn-ontime decreases and the turn-off time increases. An in-crease of the turn-off current lB2 shortens the turn-offtime.

The switching times depend on the duration of theturn-on pulse. It is only when the duration of this pulseis a multiple of the switching times that the latterremain constant. If the pulse is shorter, especially thestorage time decreases. With a pulse duration in theregion of the turn-on time the transistor is no longerfully saturated. The collector voltage then exhibits acharacteristic such as is qualitatively represented inthe diagram below.

)

IB1

Ic

IB2

RL

IB ≈≈

I B1

I B2

IC

≈

t

≈≈

tstrtd tft

I C

0.1

I C

≈

0.9 I

C

VCC

VCE

VCEmin

tp ts tf

0.1

V

V

0.9

V

16 ITT INTERMETALL

Quality

ITT INTERMETALL’ s Quality Assurance and Reliability System

Our View of Quality and Reliability

ITT INTERMETALL gives the highest priority to de-veloping, manufacturing, and delivering products thatsatisfy all our customers with respect to product per-formance, quality, reliability, on-time delivery, and com-petitive prices. Therefore, ITT INTERMETALL has im-plemented quality and reliability assurance activities inall phases of the product cycle from business devel-opment through product design, mass production, ship-ment, and marketing. Each department is responsiblefor the quality of its output and also each individual forthe quality of his/her work. The quality system is basedon the ISO 9000 concept. The system and the proces-ses are continuously improved so that a steady pro-gress in product quality can be achieved.

Quality Assurance during Product Development

The quality and reliability of a product are “built-in” dur-ing the product development and design phase. In ICdevelopment, functional simulations, design rule checks,and detailed resource planning are performed to getgood quality products to the market in time.Design reviews control the progress of developmentprojects by measuring performance data against thetargeted specification. The product release for produc-tion is determined by the results of extensive productperformance evaluation as well as quality and reliabilitytesting on prototypes.

Quality Assurance during Mass Production

In a manufacturing line, processes are controlled bymonitoring the relevant process parameters (SPC).Variations in processes are continuously reduced toincrease yield, product performance, quality, and relia-bility. State-of-the-art production equipment and stableprocesses are essential for good quality products atcompetitive prices. In order to achieve these goals, a wide variety of de-sign and process changes are made after productionrelease. Detailed qualification procedures ensure thatthese changes maintain or improve the quality andreliability of the products.

Quality Control of Outgoing Products

Although the quality and reliability is “built into” the pro-ducts during products development and production, it isalso verified by inspections.Outgoing inspection of samples generates quality datathat is fed back to previous processes for correctiveactions.A reliability monitoring program is installed to verify pro-duct reliability. Failure analysis is performed to find theroot cause. The documented information is fed back todevelopment and production departments for furtherproduct improvements. Reliability data is also used topredict product lifetime under specific environmentalconditions.

Quality Control in the Market

Close contacts with key customers enable ITT INTER-METALL to collect quality information from the market.If a customer returns a failing product, it is subjected todetailed failure analysis until root causes are found.The history of the product, the results of the failure ana-lysis, and the root causes are entered into a QualityData Base (QDB). The evaluation of the data base isused to prioritize corrective action programs in alldepartments.

Quality

ITT Semiconductors 17

Product Quality and Assurance System

Planning

Design

PilotProduction

VolumeProduction

Market

Marketing Development Engineering Quality Manufacturing

Market Research

Decision on Project Start

Definition of Pro-duct Specifications

(Pflichtenheft)

Quality Standard

Design of Product and Process

Design Review

Evaluation of Partsand Material

Prototype Production / Performance Evaluation

Quality and Reliability Evaluation on Prototype

Design Approval

Qualification Testing / Quality and Reliability

Standardization of Material and Process

Production Release

ContinuousImprovement ofTechnology and

Performance

• Supplier Ranking• Incoming Inspection• Reliability Monitoring• Q-Training and Education• Internal Audits

• Process Control• Facility Control• Assurance of

Quality, Cost andDelivery

Delivery and Shipment

Corrective Actions

CustomerService

QualityInformation andFailure Analysis

Process

18 ITT INTERMETALL

ITT INTERMETALL 19

Small-Signal Transistors (NPN)

20 ITT INTERMETALL

2N3904

NPN Silicon Epitaxial Planar Transistorfor switching and amplifier applications.

As complementary type, the PNP transistor 2N3906 isrecommended.

On special request, this transistor is also manufacturedin the pin configuration TO-18.

Absolute Maximum Ratings

Symbol Value Unit

Collector-Base Voltage VCBO 60 V

Collector-Emitter Voltage VCEO 40 V

Emitter-Base Voltage VEBO 6 V

Collector Current IC 100 mA

Peak Collector Current ICM 200 mA

Power Dissipation at Tamb = 25 °C Ptot 5001) mW

Junction Temperature Tj 150 °C

Storage Temperature Range TS –65…+150 °C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

0.55∅ max.

2.5

B

CE

4.6 3.6

TO-92 Plastic PackageWeight approx. 0.18 gDimensions in mm

ITT INTERMETALL 21

Symbol Min. Typ. Max. Unit

DC Current Gainat VCE = 1 V, IC = 0.1 mAat VCE = 1 V, IC = 1 mAat VCE = 1 V, IC = 10 mAat VCE = 1 V, IC = 50 mAat VCE = 1 V, IC = 100 mA

hFEhFEhFEhFEhFE

40701006030

–––––

––300––

–––––

Thermal Resistance Junction to Ambient Air RthA – – 2501) K/W

Collector Saturation Voltageat IC = 10 mA, IB = 1 mAat IC = 50 mA, IB = 5 mA

VCEsatVCEsat

––

––

0.20.3

VV

Base Saturation Voltageat IC = 10 mA, IB = 1 mAat IC = 50 mA, IB = 5 mA

VBEsatVBEsat

––

––

0.850.95

VV

Collector-Emitter Cutoff CurrentVEB = 3 V, VCE = 30 V

ICEV – – 50 nA

Emitter-Base Cutoff CurrentVEB = 3 V, VCE = 30 V

IEBV – – 50 nA

Collector-Base Breakdown Voltageat IC = 10 µA, IE = 0

V(BR)CBO 60 – – V

Collector-Emitter Breakdown Voltageat IC = 1 mA, IB = 0

V(BR)CEO 40 – – V

Emitter-Base Breakdown Voltageat IE = 10 µA, IC = 0

V(BR)EBO 6 – – V

Gain-Bandwidth Productat VCE = 20 V, IC = 10 mA, f = 100 MHz

fT 300 – – MHz

Collector-Base Capacitanceat VCB = 5 V, f = 100 kHz

CCBO – – 4 pF

Emitter-Base Capacitanceat VEB = 0.5 V, f = 100 kHz

CEBO – – 8 pF

Input Impedanceat VCE = 10 V, IC = 1 mA, f = 1 kHz

hie 1 – 10 kΩ

Voltage Feedback Ratioat VCE = 10 V, IC = 1 mA, f = 1 kHz

hre 0.5 · 10–4 – 8 · 10–4 –


2N3904

Characteristics at Tamb = 25 °C

22 ITT INTERMETALL

2N3904

Characteristics, continuation

Fig. 1: Test circuit for delay and rise time Fig. 2: Test circuit for storage and fall time

* total shunt capacitance of test jig and connectors * total shunt capacitance of test jig and connectors


Small-Signal Current Gainat VCE = 10 V, IC = 1 mA, f = 1 kHz

hfe 100 – 400 –

Output Admittanceat VCE = 1 V, IC = 1 mA, f = 1 kHz

hoe 1 – 40 µS

Noise Figureat VCE = 5 V, IC = 100 µA, RG = 1 kΩ,f = 10…15000 Hz

– – – 5 dB

Delay Time (see Fig. 1)at IB1 = 1 mA, IC = 10 mA

td – – 35 ns

Rise Time (see Fig. 1)at IB1 = 1 mA, IC = 10 mA

tr – – 35 ns

Storage Time (see Fig. 2)at –IB1 = IB2 = 1 mA, IC = 10 mA

ts – – 200 ns

Fall Time (see Fig. 2)at –IB1 = IB2 = 1 mA, IC = 10 mA

tf – – 50 ns

10 < t < 500 msDUTY CYCLE = 2%

0

+ 10.9 V

- 9.1V

+ 3.0 V275

10 K

C < 4.0 pF*3

t11

< 1.0 ns

300 nsDUTY CYCLE = 2%

- 0.5 V

+ 10.9 V

< 1.0 ns

+ 3.0 V275

10 K

C < 4.0 pF*3

ITT INTERMETALL 23

2N3094

24 ITT INTERMETALL

2N4124

NPN Silicon Epitaxial Transistorfor switching and amplifier applications.Especially suitable for AF-driver andlow-power output stages.

As complementary type, the PNP transistor 2N4126 isrecommended.


Symbol Value Unit






Base Current IB 50 mA



Storage Temperature Range TS –65 to +150 °C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

0.55∅ max.

2.5

B

CE

4.6 3.6


ITT INTERMETALL 25

2N4124



DC Current Gainat VCE = 1 V, IC = 2.0 mAat VCE = 1 V, IC = 50 mA

hFEhFE

120–

–60

360–

––

Collector-Base Cutoff Currentat VCB = 20 V

ICBO – – 50 nA

Emitter-Base Cutoff Currentat VEB = 3 V

IEBO – – 50 nA

Collector Saturation Voltageat IC = 50 mA, IB = 5 mA

VCESAT – – 0.3 V

Base Saturation Voltageat IC = 50 mA, IB = 5 mA

VBESAT – – 0.95 V

Collector-Emitter Breakdown Voltageat IC = 1 mA


Collector-Base Breakdown Voltageat IC = 10 µA


Emitter-Base Breakdown Voltageat IE = 10 µA



fT – 200 – MHz

Collector-Base Capacitanceat VCB = 10 V, f = 1 MHz

CCBO – 12 – pF



26 ITT INTERMETALL


K/W

rthA

1

tp

Valid provided that leads are kept at ambient temperatureat a distance of 2 mm from case

2N4124

2

103

5

102

5

2

10

5

2

5

2

10-1

10-6 10-4 10-2 1 10 s2

0.5

0.2

0.1

0.05

tpν = tp

T PI

T

10-5

ν = 0

0.005

10-3 10-1 10

0.02

0.01

Gain-bandwidth productversus collector current

MHz10

10

IC

3

7

2

2

101

2N4124

5

4

3

7

2

5

4

3

2 5 10 2 5 102 2 5 103 mA

Tamb= 25 °Cf = 20 MHz

VCE = 5 V

1 V

fT

Collector currentversus base-emitter voltage

mA10

10IC

10

1

VBE

3

5

2

2

5

2

5

2

5

2

10-10 1 2 V

2N4124

-50 °C

25 °C

150 °C

typical

at T = 25 °Camblimits


W1

Ptot

0.6

0.4

10000

0.2

Tamb200 °C


2N4124

0.8

2N4124

ITT INTERMETALL 27

Common emittercollector characteristics

500

400

IC

300

200

100

100

VCE

2 V

I = 0.2 mAB

2N4124

0.8

0.6

0.4

1.4

1.2

1

1.6

1.82

2.4

2.83.2

mA

Base saturation voltageversus collector current

V2

1

10100

I

2N4124

V

I

-1 1 102 310

typical

limitsat

BEsat

= 25 °CTambC

IB= 10

150 °C

25 °C

-50 °C

C

mA

-1

DC current gainversus collector current

1000

hFE

100

10

IC

700

500

400

300

200

70

50

40

30

20

10 1 10 102 10 3

2N4124

-50 °C

V = 1 VCE

150 °C

T = 25 °Camb

Collector saturation voltageversus collector current

V0.5

10100

I

2N4124

V

I

-1 1 102 310

typical

limitsat

CEsat

= 25 °CTambC

IB= 10

150 °C25 °C

-50 °C

C

mA

0.4

0.3

0.2

0.1

2N4124

28 ITT INTERMETALL


mA100

IC

1000

VCE

20 V

80

60

40

200.1

0.2

0.3

2N4124

I = 0.05 mAB

0.15

0.25

0.35


mA500

400

IC

300

200

100

100

VCE

2 V

0.8

2N4124

0.75

0.850.9

V = 0.7 VBE

2N4124

ITT INTERMETALL 29

2N4124

30 ITT INTERMETALL

BC337, BC338

NPN Silicon Epitaxial Planar Transistorsfor switching and amplifier applications. Especially suit-able for AF-driver stages and low power output stages.

These types are also available subdivided into threegroups -16, -25, and -40, according to their DC currentgain. As complementary types, the PNP transistorsBC327 and BC328 are recommended.

On special request, these transistors are also manu-factured in the pin configuration TO-18.


Symbol Value Unit

Collector-Emitter Voltage BC337BC338

VCESVCES

5030

VV


VCEOVCEO

4525

VV



Peak Collector Current ICM 1 A

Base Current IB 100 mA





0.55∅ max.

2.5

B

EC

4.6 3.6


ITT INTERMETALL 31

BC337, BC338



DC Current Gainat VCE = 1 V, IC = 100 mA

Current Gain Group -16-25-40

at VCE = 1 V, IC = 300 mACurrent Gain Group -16

-25-40

hFEhFEhFE

hFEhFEhFE

100160250

60100170

160250400

130200320

250400630

–––

–––

–––

Collector-Emitter Cutoff Currentat VCE = 45 V BC337at VCE = 25 V BC338at VCE = 45 V, Tamb = 125 °C BC337at VCE = 25 V, Tamb = 125 °C BC338

ICESICESICESICES

––––

22––

1001001010

nAnAµAµA

Collector-Emitter Breakdown Voltageat IC = 10 mA BC338

BC337V(BR)CEOV(BR)CEO

2045

––

––

VV

Collector-Emitter Breakdown Voltageat IC = 0.1 mA BC338

BC337V(BR)CESV(BR)CES

3050

––

––

VV

Emitter-Base Breakdown Voltageat IE = 0.1 mA



VCEsat – – 0.7 V

Base-Emitter Voltageat VCE = 1 V, IC = 300 mA

VBE – – 1.2 V


fT – 100 – MHz


CCBO – 12 – pF



ITT INTERMETALL 31

32 ITT INTERMETALL

BC337, BC338


W1

Ptot

0.6

0.4

10000

0.2

Tamb200 °C


BC337, BC338

0.8


K/W

rthA

1

tp


BC337, BC338

2

103

5

102

5

2

10

5

2

5

2

10-1

10-6 10-4 10-2 1 10 s2

0.5

0.2

0.1

0.05

tpν = tp

T PI

T

10-5

ν = 0

0.005

10-3 10-1 10

0.02

0.01


mA10

10IC

10

1

VBE

3

5

2

2

5

2

5

2

5

2

10-10 1 2 V

BC337, BC338

-50 °C

25 °C

150 °C

typical

at T = 25 °Camblimits


MHz10

10

IC

3

7

2

2

101

BC337, BC338

5

4

3

7

2

5

4

3

2 5 10 2 5 102 2 5 103 mA

Tamb= 25 °Cf = 20 MHz

VCE = 5 V

1 V

fT

ITT INTERMETALL 33

BC337, BC338


V0.5

10100

I

BC337, BC338

V

I

-1 1 102 310

typical

limitsat

CEsat

= 25 °CTambC

IB= 10

150 °C25 °C

-50 °C

C

mA

0.4

0.3

0.2

0.1


V2

1

10100

I

BC337, BC338

V

I

-1 1 102 310

typical

limitsat

BEsat

= 25 °CTambC

IB= 10

150 °C

25 °C

-50 °C

C

mA

-1


1000

hFE

100

10

IC

700

500

400

300

200

70

50

40

30

20

10 1 10 102 10 3

BC337, BC338

-50 °C

V = 1 VCE

150 °C

T = 25 °Camb


500

400

IC

300

200

100

100

VCE

2 V

I = 0.2 mAB

BC337, BC338

0.8

0.6

0.4

1.4

1.2

1

1.6

1.82

2.4

2.83.2

mA

34 ITT INTERMETALL

BC337, BC338


mA100

IC

1000

VCE

20 V

80

60

40

200.1

0.2

0.3

BC337, BC338

I = 0.05 mAB

0.15

0.25

0.35


mA500

400

IC

300

200

100

100

VCE

2 V

0.8

BC337, BC338

0.75

0.850.9

V = 0.7 VBE

ITT INTERMETALL 35

BC337, BC338

36 ITT INTERMETALL

BC546 … BC549

NPN Silicon Epitaxial Planar Transistors

These transistors are subdivided into three groups A, Band C according to their current gain. The type BC546is available in groups A and B, however, the typesBC547 and BC548 can be supplied in all three groups.The BC549 is a low-noise type and available in groupsB and C. As complementary types, the PNP transistorsBC556 … BC559 are recommended.

On special request, these transistors are also manu-factured in the pin configuration TO-18.


Symbol Value Unit

Collector-Base Voltage BC546BC547

BC548, BC549

VCBOVCBOVCBO

805030

VVV


BC548, BC549

VCESVCESVCES

805030

VVV


BC548, BC549

VCEOVCEOVCEO

654530

VVV

Emitter-Base Voltage BC546, BC547BC548, BC549

VEBOVEBO

65

VV



Peak Base Current IBM 200 mA

Peak Emitter Current –IEM 200 mA





0.55∅ max.

2.5

B

EC

4.6 3.6


ITT INTERMETALL 37

BC546 … BC549



h-Parameters at VCE = 5 V, IC = 2 mA,f = 1 kHz,Small Signal Current Gain

Current Gain Group ABC

Input Impedance Current Gain Group ABC

Output Admittance Current Gain Group ABC

Reverse Voltage Transfer RatioCurrent Gain Group A

BC

hfehfehfehiehiehiehoehoehoe

hrehrehre

–––1.63.26–––

–––

2203306002.74.58.7183060

1.5 · 10–42 · 10–43 · 10–4

–––4.58.5153060110

–––

–––kΩkΩkΩµSµSµS

–––

DC Current Gainat VCE = 5 V, IC = 10µA


at VCE = 5 V, IC = 2 mACurrent Gain Group A

BC


BC

hFEhFEhFE

hFEhFEhFE

hFEhFEhFE

–––

110200420

–––

90150270

180290500

120200400

–––

220450800

–––

–––

–––

–––


Collector Saturation Voltageat IC = 10 mA, IB = 0.5 mAat IC = 100 mA, IB = 5 mA

VCEsatVCEsat

––

80200

200600

mVmV

Base Saturation Voltageat IC = 10 mA, IB = 0.5 mAat IC = 100 mA, IB = 5 mA

VBEsatVBEsat

––

700900

––

mVmV

Base-Emitter Voltageat VCE = 5 V, IC = 2 mAat VCE = 5 V, IC = 10 mA

VBEVBE

580–

660–

700720

mVmV

Collector-Emitter Cutoff Currentat VCE = 80 V BC546at VCE = 50 V BC547

at VCE = 30 V BC548, BC549

at VCE = 80 V, Tj = 125 °C BC546at VCE = 50 V, Tj = 125 °C BC547

ICESICES

ICES

ICESICES

––

–

––

0.20.2

0.2

––

1515

15

44

nAnA

nA

µAµA


38 ITT INTERMETALL


at VCE = 30 V, Tj = 125 °C BC548, BC549 ICES – – 44

µAµA


fT – 300 – MHz


CCBO – 3.5 6 pF

Emitter-Base Capacitanceat VEB = 0.5 V, f = 1 MHz

CEBO – 9 – pF

Noise Figureat VCE = 5 V, IC = 200 µA, RG = 2 kΩ,f = 1 kHz, ∆f = 200 Hz BC546, BC547

BC548BC549

at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,f = 30…15000 Hz BC549

F

F

F

–

–

–

2

1.2

1.4

10

4

4

dB

dB

dB

BC546 … BC549

Admissible power dissipationversus temperature

mW500

Ptot

300

200

10000

100

Tamb

200 °C

Valid provided that leads are kept at ambienttemperature at a distance of 2 mm from case

BC546...BC549

400


K/W

rthA

1

tp

Valid provided that leads are kept at ambienttemperature at a distance of 2 mm from case

BC546...BC549

2

103

5

102

5

2

10

5

2

5

2

10-1

10-6 10-4 10-2 1 10 s2

0.2

0.1

0.05

0.02

0.01

0.005

tpν = tp

T PI

T

ν = 0


ITT INTERMETALL 39

BC546 … BC549


10

5

hFE

101

IC

3BC546...BC549

4

3

2

102

5

4

3

2

10

54

3

2

-2 10-1 101 102 mA

-50 °C

VCE = 5 V

100 °C

Tamb = 25 °C

Collector current versusbase-emitter voltage

mA10

5

IC

10

1

010

VBE

BC546...BC5492

4

3

2

5

4

3

2

5

4

3

2

-1

0.5 1 V

Tamb = 100 °C -50 °C

25 °C

VCE = 5 V

Collector-base cutoff currentversus ambient temperature

nA

ICBO

10

1000

1

Tamb200 °C

BC546...BC549

103

104

102

10-1

Test voltage V :equal to the givenmaximum value

typicalmaximum

VCES

CBO


V0.5

0.4

VCEsat

0.3

0.2

10

0.1

IC

BC546...BC549

102 5 2 5 2 510-1 10 mA2

-50 °C

25 °C

Tamb= 100 °C

I C = 20I B

40 ITT INTERMETALL

Noise figureversus collector current

dB20

F

12

8

100

6

IC10 mA

BC549

18

16

14

10

4

2

-3 10-2 10-1 1

V = 5 VCEf = 120 Hz

amb

G

500 V

1kV

T = 25 °C

R = 1 MV 100 kV 10 kV 1 kV

BC546 … BC549

Collector-base capacitance,Emitter-base capacitanceversus reverse bias voltage

pF10

6

4

10.10

2

VCBO,

10 V

BC546...BC549

8

VEBO

0.2 0.5 2 5

CCBOCEBO

CCBO

CEBO

T = 25 °Camb


MHz10

fT

0.1IC

100 mA

BC546...BC5493

7

5

4

3

2

102

7

5

4

3

2

102 5 1 2 5 10 2 5

T = 25 °Camb

V = 10 VCE

5 V

2 V

Relative h-parametersversus collector current

10

110

1

IC10 mA

BC546...BC549102

6

4

2

6

4

2

6

4

2

-1

10-1 2 4 2 4

h (I = 2 mA)e C

h (I )e C

hie

hoe

hre

hfe

V = 5 VCET = 25 °Camb

ITT INTERMETALL 41

BC546 … BC549


dB20

F

12

8

100

6

IC10 mA

BC549

18

16

14

10

4

2

-3 10-2 10-1 1

V = 5 VCEf = 1 kHz

amb

500 V

1kV

500 V

T = 25 °C

GR = 1 MV 100kV 10 kV

Noise figureversus collector emitter voltage

dB20

F

12

8

100

6

VCE

10 V

BC549

18

16

14

10

4

2

-12 1 2

I = 0.2 mAC

f = 1 kHz

ambT = 25 °C

R = 2 kVG

Df = 200 Hz

5 5 10 2 5 2

42 ITT INTERMETALL

BC817, BC818

NPN Silicon Epitaxial Planar Transistorsfor switching, AF driver and amplifier applications.

Especially suited for automatic insertion in thick- andthin-film circuits.

These transistors are subdivided into three groups -16,-25 and -40 according to their current gain.As complementary types, the PNP transistors BC807and BC808 are recommended.

Pin configuration1 = Collector, 2 = Base, 3 = Emitter.

Marking code

Type Marking

BC817-16-25-40

BC818-16-25-40

6A6B6C

6E6F6G


Symbol Value Unit


VCESVCES

5030

VV


VCEOVCEO

4525

VV






Power Dissipation at TSB = 50 °C Ptot 3101) mW



1) Device on fiberglass substrate, see layout

0.4

0.95 0.95

3

0.4 0.4

+0.1

1

2 3

Top View

SOT-23 Plastic PackageWeight approx. 0.008 gDimensions in mm

2.45+0.1

ITT INTERMETALL 43

BC817, BC818




Current Gain Group-16-25-40

at VCE = 1 V, IC = 300 mA -16-25-40

hFEhFEhFEhFEhFEhFE

10016025060100170

––––––

250400600–––

––––––

Thermal Resistance Junction SubstrateBackside

RthSB – – 3201) K/W




Base-Emitter Voltageat VCE = 1 V, IC = 300 mA

VBE – – 1.2 V

Collector-Emitter Cutoff Currentat VCE = 45 V BC817at VCE = 25 V BC818at VCE = 25 V, Tj = 150 °C

ICESICESICES

–––

–––

1001005

nAnAµA

Emitter-Base Cutoff Currentat VEB = 4 V

IEBO – – 100 nA


fT – 100 – MHz


CCBO – 12 pF


Layout for RthA testThickness: Fiberglass 1.5 mm

Copper leads 0.3 mm

15 12

5

0.8

7.5

3

1

1.5

5.1

2

2

1

44 ITT INTERMETALL

BC817, BC818

Admissible power dissipationversus temperature of substrate backside

mW500

Ptot

300

200

10000

100

TSB

200 °C

Device on fiberglass substrate, see layout

BC817, BC818

400

Pulse thermal resistanceversus pulse duration (normalized)

10

10

RthSB

tp


0

5

3

-1

5

2

4

2

10-310-7 10-6 10-5 10-4 10-3 10-2 1 s

BC817, BC818

tptpT

ν =PI

T

0.1

0.05

0.02

0.01

ν = 0

4

2

4

3

5

3

10-1

5 -3

0.2

0.5

rthSB

10-2


mA10

10IC

10

1

VBE

3

5

2

2

5

2

5

2

5

2

10-10 1 2 V

BC817, BC818

-50 °C

25 °C

typical

at T =25 °Camblimits

150 °C


MHz10

10

IC

3

7

2

2

101

BC817, BC818

5

4

3

7

2

5

4

3

2 5 10 2 5 102 2 5 103 mA

Tamb = 25 °Cf = 20 MHz

VCE = 5 V

1 V

fT

ITT INTERMETALL 45

BC817, BC818


V0.5

10100

I

BC817, BC818

V

I

-1 1 102 310

typical

limitsat

CEsat

= 25 °CTamb

C

IB= 10

150 °C25 °C

-50 °C

C

mA

0.4

0.3

0.2

0.1


V2

1

10100

I

BC817, BC818

V

I

-1 1 102 310

typical

limitsat

BEsat

= 25 °CTamb

CIB

= 10

150 °C

25 °C

-50 °C

C

mA

-1


1000

hFE

100

10

IC

700

500

400

300

200

70

50

40

30

20

10 1 10 102 10 mA3

BC817, BC818

-50 °C

V =1 VCE

150 °C

T = 25 °Camb


500

400

IC

300

200

100

100

VCE

2 V

I = 0.2 mAB

BC817, BC818

0.8

0.6

0.4

1.4

1.2

1

1.6

1.82

2.4

2.83.2

mA

46 ITT INTERMETALL

BC817, BC818


mA100

IC

1000

VCE

20 V

80

60

40

200.1

0.2

0.3

BC817, BC818

I = 0.05 mAB

0.15

0.25

0.35


mA500

400

IC

300

200

100

100

VCE

2 V

0.8

BC817, BC818

0.75

0.850.9

V = 0.7 VBE

ITT INTERMETALL 47

BC817, BC818

48 ITT INTERMETALL

BC846 … BC849

NPN Silicon Epitaxial Planar Transistorsfor switching and AF amplifier applications.

Especially suited for automatic insertion in thick- andthin-film circuits.

These transistors are subdivided into three groups A, Band C according to their current gain. The type BC846is available in groups A and B, however, the typesBC847 and BC848 can be supplied in all three groups.The BC849 is a low noise type available in groups Band C. As complementary types, the PNP transistorsBC856…BC859 are recommended.


Marking code

Type Marking

BC846AB

BC847ABC

1A1B

1E1F1G


Symbol Value Unit

Collector-Base Voltage BC846BC847

BC848, BC849

VCBOVCBOVCBO

805030

VVV


BC848, BC849

VCESVCESVCES

805030

VVV


BC848, BC849

VCEOVCEOVCEO

654530

VVV

Emitter-Base Voltage BC846, BC847BC848, BC849

VEBOVEBO

65

VV









Type Marking

BC848ABC

BC849BC

1J1K1L

2B2C

0.4

0.95 0.95

3

0.4 0.4

+0.1

1

2 3

Top View


2.45+0.1

ITT INTERMETALL 49

BC846 … BC849



h-Parameters at VCE = 5 V, IC = 2 mA,f = 1 kHz, Small-Signal Current Gain


Input Impedance Current Gain Group ABC

Output Admittance Current Gain Group ABC

Reverse Voltage Transfer RatioCurrent Gain Group A

BC

hfehfehfehiehiehiehoehoehoe

hrehrehre

–––1.63.26–––

–––

2203306002.74.58.7183060

1.5 · 10–42 · 10–43 · 10–4

–––4.58.5153060110

–––

–––kΩkΩkΩµSµSµS

–––

DC Current Gainat VCE = 5 V, IC = 10 µA



BC

hFEhFEhFE

hFEhFEhFE

–––

110200420

90150270

180290520

–––

220450800

–––

–––

Thermal Resistance Junction to SubstrateBackside

RthSB – – 3201) K/W


Collector Saturation Voltageat IC = 10 mA, IB = 0.5 mAat IC = 100 mA, IB = 5 mA

VCEsatVCEsat

––

90200

250600

mVmV

Base Saturation Voltageat IC = 10 mA, IB = 0.5 mAat IC = 100 mA, IB = 5 mA

VBEsatVBEsat

––

700900

––

mVmV

Base-Emitter Voltageat VCE = 5 V, IC = 2 mAat VCE = 5 V, IC = 10 mA

VBEVBE

580–

660–

700720

mVmV

Collector-Emitter Cutoff Currentat VCE = 80 V BC846at VCE = 50 V BC847at VCE = 30 V BC848, BC849at VCE = 80 V, Tj = 125 °C BC846at VCE = 50 V, Tj = 125 °C BC847at VCE = 30 V, Tj = 125 °C BC848, BC849

ICESICESICESICESICESICES

––––––

0.20.20.2–––

151515444

nAnAnAµAµAµA


fT – 300 – MHz


50 ITT INTERMETALL

BC846 … BC849



CCBO – 3.5 6 pF

Emitter-Base Capacitanceat VEB = 0.5 V, f = 1 MHz

CEBO – 9 – pF

Noise Figureat VCE = 5 V, IC = 200 µA, RG = 2 kΩ,f = 1 kHz, ∆f = 200 Hz BC846, BC847, BC848

BC849

at VCE = 5 V, IC = 200 µA, RG = 2 kΩ,f = 30…15000 Hz BC849

FF

F

––

–

21.2

1.4

104

4

dBdB

dB



Copper leads 0.3 mm

15 12

5

0.8

7.5

3

1

1.5

5.1

2

2

1

ITT INTERMETALL 51

Admissible power dissipationversus temperature of substrate backside

mW500

Ptot

300

200

10000

100

TSB200 °C


BC846...BC849

400

Pulse thermal resistanceversus pulse duration (normalized)

10

10

RthSB

tp


0

5

3

-1

5

2

4

2

10-310-7 10-6 10-5 10-4 10-3 10-2 1 s

BC846...BC849

tptpT

ν =PI

T

0.1

0.05

0.02

0.01

ν = 0

4

2

4

3

5

3

10-1

5 -3

0.2

0.5

rthSB

10-2


10

5

hFE

101

IC

3BC846...BC849

4

3

2

102

5

4

3

2

10

54

3

2

-2 10-1 101 102 mA

-50 °C

VCE = 5 V

100 °C

Tamb = 25 °C

Collector-Base cutoff currentversus ambient temperature

nA

ICBO

10

1000

1

Tamb200 °C

BC846...BC849

103

104

102

10-1

Test voltage V :equal to the givenmaximum value

typicalmaximum

VCES

CBO

BC846 … BC849

52 ITT INTERMETALL

Collector current versusbase-emitter voltage

mA10

5

IC

10

1

010

VBE

BC846...BC8492

4

3

2

5

4

3

2

5

4

3

2

-1

0.5 1 V

Tamb = 100 °C -50 °C

25 °C

VCE = 5 V


V0.5

0.4

VCEsat

0.3

0.2

10

0.1

IC

BC846...BC849

102 5 2 5 2 510-1 10 mA2

-50 °C

25 °C

Tamb= 100 °C

I C = 20I B

BC846 … BC849

Collector base capacitance,Emitter base capacitanceversus reverse bias voltage

pF10

6

4

10.10

2

VCBO,

10 V

BC846...BC849

8

VEBO

0.2 0.5 2 5

CCBOCEBO

CCBO

CEBO

T = 25 °Camb

Relative h-parametersversus collector current

10

110

1

IC

10 mA

BC846...BC849102

6

4

2

6

4

2

6

4

2

-1

10-1 2 4 2 4

h (I = 2 mA)e C

h (I )e C

hie

hoe

hre

hfe

V = 5 VCET = 25 °Camb

ITT INTERMETALL 53


dB20

F

12

8

100

6

IC

10 mA

BC846...BC849

18

16

14

10

4

2

-3 10-2 10-1 1

V = 5 VCEf = 120 Hz

amb

G

500 V

1 kV

T = 25 °C

R = 1 MV 100 kV 10 kV 1 kV

Noise figureversus collector emitter voltage

dB20

F

12

8

100

6

VCE

10 V

BC846, BC849

18

16

14

10

4

2

-12 1 2

I = 0.2 mAC

f = 1 kHz

ambT = 25 °C

R = 2 kVG

Df = 200 Hz

5 5 10 2 5 2


dB20

F

12

8

100

6

IC

10 mA

BC846, BC849

18

16

14

10

4

2

-3 10-2 10-1 1

V = 5 VCEf = 1 kHz

amb

500 V

1kV

500 V

T = 25 °C

GR = 1 MV 100kV 10 kV

BC846 … BC849


MHz10

fT

0.1IC

100 mA

BC846...BC8493

7

5

4

3

2

102

7

5

4

3

2

102 5 1 2 5 10 2 5

T = 25 °Camb

V = 10 VCE

5 V

2 V

BF420, BF422

NPN Silicon Epitaxial Planar Transistorsespecially suited for application in class-Bvideo output stages of TV receivers and monitors.

As complementary types, the PNP transistorsBF421 and BF423 are recommended

0.55∅ max.

2.5

C

BE

4.6 3.6



Symbol Value Unit

Collector-Base Voltage BF420BF422

VCBOVCBO

300250

VV

Collector-Emitter Voltage BF422 VCEO 250 V

Collector-Emitter Voltage BF420 VCER 300 V








54 ITT INTERMETALL

BF420, BF422



Collector-Base Breakdown Voltage BF420at IC = 100 µA, IB = 0 BF422

V(BR)CBOV(BR)CBO

300250

––

––

VV

Collector-Emitter Breakdown Voltage BF422at IC = 10 mA, IE = 0

V(BR)CEO 250 – – V

Collector-Emitter Breakdown Voltage BF420at RBE = 2.7 kΩ, IC = 10 mA

V(BR)CER 300 – – V

Emitter-Base Breakdown Voltageat IE = 100 µA, IB = 0


Collector-Base Cutoff Currentat VCB = 200 V, IE = 0

ICBO – – 10 nA

Collector-Emitter Cutoff Currentat RBE = 2.7 kΩ, VCE = 250 Vat RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C

ICERICER

5010

nAµA




hFE 50 – – –

Gain-Bandwidth Productat VCE = 10 V, IC = 10 mA

fT 60 – – MHz

Feedback Capacitanceat VCE = 30 V, IC = 0, f = 1 MHz

Cre – – 1.6 pF



ITT INTERMETALL 55

BF820, BF822

NPN Silicon Epitaxial Planar Transistorsespecially suited for application in class-Bvideo output stages of TV receivers and monitors.

As complementary types, the PNP transistors BF821 and BF823 are recommended.


Marking codeBF820 = 1VBF822 = 1X

0.4

0.95 0.95

3

0.4 0.4

+0.1

1

2 3

Top View


2.45+0.1


Symbol Value Unit

Collector-Base Voltage BF820BF822

VCBOVCBO

300250

VV

Collector-Emitter Voltage BF822 VCEO 250 V

Collector-Emitter Voltage BF820 VCER 300 V








56 ITT INTERMETALL

BF820, BF822



Collector-Base Breakdown Voltage BF820at IC = 100 µA, IB = 0 BF822

V(BR)CBOV(BR)CBO

300250

––

––

VV

Collector-Emitter Breakdown Voltage BF822at IC = 10 mA, IE = 0

V(BR)CEO 250 – – V

Collector-Emitter Breakdown Voltage BF820at RBE = 2.7 kΩ, IC = 10 mA

V(BR)CER 300 – – V

Emitter-Base Breakdown Voltageat IE = 100 µA, IB = 0


Collector-Base Cutoff Currentat VCB = 200 V, IE = 0

ICBO – – 10 nA

Collector-Emitter Cutoff Currentat RBE = 2.7 kΩ, VCE = 250 Vat RBE = 2.7 kΩ, VCE = 200 V, Tj = 150 °C

ICERICER

5010

nAµA




hFE 50 – – –

Gain-Bandwidth Productat VCE = 10 V, IC = 10 mA

fT 60 – – MHz

Feedback Capacitanceat VCE = 30 V, IC = 0, f = 1 MHz

Cre – – 1.6 pF




Copper leads 0.3 mm

15 12

5

0.8

7.5

3

1

1.5

5.1

2

2

1

ITT INTERMETALL 57

MMBT3904

NPN Silicon Epitaxial Planar Transistorfor switching and amplifier applications.

As complementary type, the PNP transistor MMBT3906 is recommended.


Marking code1N

0.4

0.95 0.95

3

0.4 0.4

+0.1

1

2 3

Top View


2.45+0.1


Symbol Value Unit










58 ITT INTERMETALL

MMBT3904



DC Current Gainat VCE = 1 V, IC = 0.1 mAat VCE = 1 V, IC = 1 mAat VCE = 1 V, IC = 10 mAat VCE = 1 V, IC = 50 mAat VCE = 1 V, IC = 100 mA

hFEhFEhFEhFEhFE

40701006030

–––––

––300––

–––––

Thermal Resistance Junction to SubstrateBackside

RthSB – – 3201) K/W


Collector Saturation Voltageat IC = 10 mA, IB = 1 mAat IC = 50 mA, IB = 5 mA

VCEsatVCEsat

––

––

0.20.3

VV

Base Saturation Voltageat IC = 10 mA, IB = 1 mAat IC = 50 mA, IB = 5 mA

VBEsatVBEsat

––

––

0.850.95

VV

Collector-Emitter Cutoff CurrentVEB = 3 V, VCE = 30 V

ICEV – – 50 nA

Emitter-Base Cutoff CurrentVEB = 3 V, VCE = 30 V

IEBV – – 50 nA

Collector-Base Breakdown Voltageat IC = 10 µA, IE = 0


Collector-Emitter Breakdown Voltageat IC = 1 mA, IB = 0


Emitter-Base Breakdown Voltageat IE = 10 µA, IC = 0



fT 300 – – MHz

Collector-Base Capacitanceat VCB = 5 V, f = 100 kHz

CCBO – – 4 pF

Emitter-Base Capacitanceat VEB = 0.5 V, f = 100 kHz

CEBO – – 8 pF

Input Impedanceat VCE = 10 V, IC = 1 mA, f = 1 kHz

hie 1 – 10 kΩ


ITT INTERMETALL 59


MMBT3904


Voltage Feedback Ratioat VCE = 10 V, IC = 1 mA, f = 1 kHz

hre 0.5 · 10–4 – 8 · 10–4 –

Small-Signal Current Gainat VCE = 10 V, IC = 1 mA, f = 1 kHz

hfe 100 – 400 –

Output Admittanceat VCE = 1 V, IC = 1 mA, f = 1 kHz

hoe 1 – 40 µS

Noise Figureat VCE = 5 V, IC = 100 µA, RG = 1 kΩ,f = 10…15000 Hz – – – 5 dB

Delay Time (see Fig. 1)at IB1 = 1 mA, IC = 10 mA

td – – 35 ns

Rise Time (see Fig. 1)at IB1 = 1 mA, IC = 10 mA

tr – – 35 ns

Storage Time (see Fig. 2)at –IB1 = IB2 = 1 mA, IC = 10 mA

ts – – 200 ns

Fall Time (see Fig. 2)at –IB1 = IB2 = 1 mA, IC = 10 mA

tf – – 50 ns


0

+ 10.9 V

- 9.1V

+ 3.0 V275

10 K

C < 4.0 pF*3

t11

< 1.0 ns


- 0.5 V

+ 10.9 V

< 1.0 ns

+ 3.0 V275

10 K

C < 4.0 pF*3



60 ITT INTERMETALL


Copper leads 0.3 mm

15 12

5

0.8

7.5

3

1

1.5

5.1

2

2

1

ITT INTERMETALL 61

MMBT3904

MMBTA42, MMBTA43

NPN Silicon Epitaxial Planar Transistorsespecially suited as line switch in telephone subsetsand in video output stages of TV receivers and moni-tors.

As complementary types, the PNP transistors MMBTA92and MMBTA93 are recommended.

Pin Configuration1 = Collector, 2 = Base, 3 = Emitter

Marking CodeMMBTA42 = 1DMMBTA43 = 1E

0.4

0.95 0.95

3

0.4 0.4

+0.1

1

2 3

Top View


2.45+0.1


Symbol Value Unit

Collector-Emitter Voltage MMBTA42MMBTA43

VCEOVCEO

300200

VV

Collector-Base Voltage MMBTA42MMBTA43

VCBOVCBO

300200

VV



Power Dissipation1) at TSB = 50 °C Ptot 3001) mW




62 ITT INTERMETALL

MMBTA42, MMBTA43



Collector-Emitter Breakdown Voltage MMBTA42IC = 10 mA, IB = 0 MMBTA43

V(BR)CEOV(BR)CEO

300200

––

––

VV

Collector-Base Breakdown Voltage MMBTA42IC = 100 µA, IE = 0 MMBTA43

V(BR)CBOV(BR)CBO

300200

––

––

VV

Emitter-Base Breakdown VoltageIE = 100 µA, IC = 0


Collector-Base Cutoff CurrentVCB = 200 V, IE = 0 MMBTA42VCB = 160 V, IE = 0 MMBTA43

ICBOICBO

––

––

100100

nAnA

Emitter-Base Cutoff CurrentVEB = 6 V, IC = 0 MMBTA42VEB = 4 V, IC = 0 MMBTA43

IEBOIEBO

––

––

100100

nAnA

DC Current GainIC = 1 mA, VCE = 10 VIC = 10 mA, VCE = 10 VIC = 30 mA, VCE = 10 V

hFEhFEhFE

254040

–––

–––

–––

Collector-Emitter Saturation VoltageIC = 20 mA, IB = 2 mA

VCEsat – – 500 mV

Base-Emitter Saturation VoltageIC = 20 mA, IB = 2 mA

VBEsat – – 900 mV

Gain-Bandwidth ProductIE = 10 mA, VCE = 20 V, f = 100 MHz

fT 50 – – MHz

Collector-Base Capacitance MMBTA42VCB = 20 V, IE = 0, f = 1 MHz MMBTA43

CCBOCCBO

––

––

34

pFpF




Copper leads 0.3 mm

15 12

5

0.8

7.5

3

1

1.5

5.1

2

2

1

ITT INTERMETALL 63

MPSA42, MPSA43

NPN Silicon Epitaxial Planar Transistorsespecially suited as line switch in telephone subsetsand in video output stages of TV receivers and moni-tors.

As complementary types, the PNP transistors MPSA92and MPSA93 are recommended.

0.55∅ max.

2.5

B

CE

4.6 3.6



Symbol Value Unit

Collector-Emitter Voltage MPSA42MPSA43

VCEOVCEO

300200

VV

Collector-Base Voltage MPSA42MPSA43

VCBOVCBO

300200

VV







64 ITT INTERMETALL

MPSA42, MPSA43



Collector-Emitter Breakdown Voltage MPSA42IC = 10 mA, IB = 0 MPSA43

V(BR)CEOV(BR)CEO

300200

––

––

VV

Collector-Base Breakdown Voltage MPSA42IC = 100 µA, IE = 0 MPSA43

V(BR)CBOV(BR)CBO

300200

––

––

VV

Emitter-Base Breakdown VoltageIE = 100 µA, IC = 0


Collector-Base Cutoff CurrentVCB = 200 V, IE = 0 MPSA42VCB = 160 V, IE = 0 MPSA43

ICBOICBO

––

––

100100

nAnA

Emitter-Base Cutoff CurrentVEB = 6 V, IC = 0 MPSA42VEB = 4 V, IC = 0 MPSA43

IEBOIEBO

––

––

100100

nAnA

DC Current GainIC = 1 mA, VCE = 10 VIC = 10 mA, VCE = 10 VIC = 30 mA, VCE = 10 V

hFEhFEhFE

254040

–––

–––

–––

Collector-Emitter Saturation VoltageIC = 20 mA, IB = 2 mA

VCEsat – – 500 mV

Base-Emitter Saturation VoltageIC = 20 mA, IB = 2 mA

VBEsat – – 900 mV

Gain-Bandwidth ProductIE = 10 mA, VCE = 20 V, f = 100 MHz

fT 50 – – MHz

Collector-Base Capacitance MPSA42VCB = 20 V, IE = 0, f = 1 MHz MPSA43

CCBOCCBO

––

––

34

pFpF


1) Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.

ITT INTERMETALL 65

66 ITT INTERMETALL

ITT INTERMETALL 67

Small-Signal Transistors (PNP)

2N3906

PNP Silicon Epitaxial Planar Transistorfor switching and amplifier applications.

As complementary type, the NPN transistor 2N3904 isrecommended.

On special request, this transistor is also manufacturedin the pin configuration TO-18.

0.55∅ max.

2.5

B

CE

4.6 3.6



Symbol Value Unit

Collector-Base Voltage –VCBO 40 V

Collector-Emitter Voltage –VCEO 40 V

Emitter-Base Voltage –VEBO 5 V

Collector Current –IC 100 mA

Peak Collector Current –ICM 200 mA





68 ITT INTERMETALL

2N3906



DC Current Gainat –VCE = 1 V, –IC = 0.1 mAat –VCE = 1 V, –IC = 1 mAat –VCE = 1 V, –IC = 10 mAat –VCE = 1 V, –IC = 50 mAat –VCE = 1 V, –IC = 100 mA

hFEhFEhFEhFEhFE

60801006030

–––––

––300––

–––––


Collector Saturation Voltageat –IC = 10 mA, –IB = 1 mAat –IC = 50 mA, –IB = 5 mA

–VCEsat–VCEsat

––

––

0.250.4

VV

Base Saturation Voltageat –IC = 10 mA, –IB = 1 mAat –IC = 50 mA, –IB = 5 mA

–VBEsat–VBEsat

––

––

0.850.95

VV

Collector-Emitter Cutoff Currentat –VEB = 3 V, –VCE = 30 V

–ICEV – – 50 nA

Emitter-Base Cutoff Currentat –VEB = 3 V, –VCE = 30 V

–IEBV – – 50 nA

Collector-Base Breakdown Voltageat –IC = 10 µA, IE = 0

–V(BR)CBO 40 – – V

Collector-Emitter Breakdown Voltageat –IC = 1 mA, IB = 0

–V(BR)CEO 40 – – V

Emitter-Base Breakdown Voltageat –IE = 10 µA, IC = 0

–V(BR)EBO 5 – – V

Gain-Bandwidth Product at –VCE = 20 V, –IC = 10 mA, f = 100 MHz

fT 250 – – MHz

Collector-Base Capacitanceat –VCB = 5 V, f = 100 kHz

CCBO – – 4.5 pF

Emitter-Base Capacitanceat –VEB = 0.5 V, f = 100 kHz

CEBO – – 10 pF

Input Impedanceat –VCE = 10 V, –IC = 1 mA, f = 1 kHz

hie 1 – 10 kΩ

Voltage Feedback Ratioat –VCE = 10 V, –IC = 1 mA, f = 1 kHz

hre 0.5 · 10–4 – 8 · 10–4 –


ITT INTERMETALL 69

2N3906





Small-Signal Current Gainat –VCE = 10 V, –IC = 1 mA, f = 1 kHz

hfe 100 – 400 –

Output Admittanceat –VCE = 1 V, –IC = 1 mA, f = 1 kHz

hoe 1 – 40 µS

Noise Figureat –VCE = 5 V, –IC = 100 µA, RG = 1 kΩ,f = 10 … 15000 Hz

F – – 4 dB

Delay Time (see Fig. 1)at –IB1 = 1 mA, –IC = 10 mA

td – – 35 ns

Rise Time (see Fig. 1)at –IB1 = 1 mA, –IC = 10 mA

tr – – 35 ns

Storage Time (see Fig. 2)at IB1 = –IB2 = 1 mA, –IC = 10 mA

ts – – 225 ns

Fall Time (see Fig. 2)at IB1 = –IB2 = 1 mA, –IC = 10 mA

tf – – 75 ns


- 0.5 V

- 10.6 V

< 10 ns- 3.0 V

27510 K

C < 4.0 pF*3

0

+ 9.1V - 3.0 V275

10 K

C < 4.0 pF*3


- 10.9 Vt11

< 1.0 ns

70 ITT INTERMETALL

ITT INTERMETALL 71

2N3906

2N4126


Symbol Value Unit

Collector-Emitter Voltage –VCEO 25 V

Collector-Base Voltage –VCBO 25 V

Emitter-Base Voltage –VEBO 4 V

Collector Current –IC 200 mA

Peak Collector Current –ICM 800 mA

Base Current –IB 50 mA





PNP Silicon Epitaxial Transistorfor switching and amplifier applications. Especially suit-able for AF-driver and low-power output stages.

As complementary type, the NPN transistor 2N4124 isrecommended.

72

0.55∅ max.

2.5

B

CE

4.6 3.6


ITT INTERMETALL

2N4126



DC Current Gainat VCE = –1 V, IC = –2.0 mAat VCE = –1 V, IC = –50 mA

hFEhFE

120–

–60

360–

––

Collector Cutoff Currentat VCB = –20 V

–ICBO – – 50 nA

Emitter Cutoff Currentat VEB = –3 V

–IEBO – – 50 nA

Collector Saturation Voltageat IC = –50 mA, IB = –5 mA

–VCESAT – – 0.4 V

Base Saturation Voltageat IC = –50 mA, IB = –5 mA

–VBESAT – – 0.95 V

Collector-Emitter Breakdown Voltageat IC = –1 mA

–V(BR)CEO 25 – – V

Collector-Base Breakdown Voltageat IC = –10 µA

–V(BR)CBO 25 – – V

Emitter-Base Breakdown Voltageat IE = –10 µA

–V(BR)EBO 4 – – V

Gain-Bandwidth Productat VCE = –5 V, IC = –10 mA, f = 50 MHz

fT – 200 – MHz

Collector-Base Capacitanceat VCB = –10 V, f = 1 MHz

CCBO – 12 – pF



ITT INTERMETALL 73

74 ITT INTERMETALL

Collector-emitter cutoff currentversus ambient temperature

nA

-ICES

Tamb

2N4126

2

104

5

103

5

2

10

5

2

5

2

10 100 200 °C

10

2

-V = 25 VCE

typicalmaximum


K/W

rthA

1

tp

Valid pro

6240-15-1e itt intermetallaitendo3.sakura.ne.jp/aitendo_data/product_img/...2 itt intermetall all...

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