4040 presentation lammps tammy docx
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Energy of Void in FCC Copper Crystal Under Uniaxial Tensile DeformationLAMMPS Tammy TancharoensuksavaiMTSE 4040 Final Project
LAMMPS Large Scale Atomic/Molecular Massively Parallel Simulatoruses neighbor lists to keep track of nearby particles which are optimized for systems with particles that are repulsive at short distancesOpen source!
Energy of Void in FCC Copper Crystal Under Uniaxial Tensile Deformation
FCC Cu Crystal - no void
20 x 20 x 20 nm box
Void Sizes & their Nucleation Sites
r=2nmr=3nmr=4nm
Slip SystemsSchmids Law = *m is equal to the stress applied to the material () multiplied by the cosine of the angle with the glide plane () and the cosine of the angle with the glide direction ()Schmid Factor m = cos()*cos()
Slip Systems
DislocationsDislocation motion in FCC crystals is governed by the critical resolved shear stress via Schmids lawStacking fault energy has been used to predict energy at a crack tipHomogeneous nucleation depends on both Schmid & non-Schmid normal factortogether they represent resolved shear stress in the direction of slip and resolved tensile stress normal to the slip plane
No Void
Red BCCPurple HCPGrey unknown
No Void
No Void
2nm radius void
Red BCCPurple HCPGrey unknown
2nm radius void
3nm radius void
Red BCCPurple HCPGrey unknown
3nm radius void
4nm radius void
Red BCCPurple HCPGrey unknown
4nm radius void
Conclusion:Energy of FCC Cu CrystalVolume remains fixed within system at 377933.0670Energy minimizes for every stepEnergy decreases as radius decreases
ReferencesDas, Ashis, and Gaurav Singh. "Plastic Deformation and Failure Studies near a Void for Copper-aluminium Alloy via Molecular Dynamics Simulation." Thesis. Department of Metallurgical and Materials Engineering National Institute of Technology, Rourkela, 2014. Print.Tschopp, M., Spearot, D., & Mcdowell, D. (2007). Atomistic simulations of homogeneous dislocation nucleation in single crystal copper. Modelling and Simulation in Materials Science and Engineering, 693-709.Wang, T., Wang, Y., Hsieh, T., Chang, S., & Cheng, Y. (n.d.). Copper voids improvement for the copper dual damascene interconnection process. Journal of Physics and Chemistry of Solids, 566-571.