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Introduction

We would like to welcome you to the SEMIDEC Promotion Guide of Russian Semiconductor Design.

Russia has a proud heritage in semiconductor components dating from the Soviet era. It is one of a few countries in the world to have in depth knowledge and capabilities spanning research, design and production of microelectronic and integrated circuits. However, awareness of its strongest microelectronics organisations – universities, design and research institutes, and industrial companies – remains comparatively low in Europe. Consequently, there exists a rich and timely opportunity for Russian microelectronics organizations and their R&D activities to be presented collectively.

This promotion guide has been prepared under the EU funded FP7 SEMIDEC project “Stimulating Semiconductor Design Cooperation Between Europe and Russia” (Contract No 247992). It is the result of a comprehensive mapping of Russian microelectronics organisations involved in research relevant to the EU´s priorities concerning semiconductor design methods, tools and standardization. The main target groups for this guide are EU companies and R&D organisations looking for partners in Russia for joint R&D projects in the area of semiconductor design.

The FP7 SEMIDEC project has been being implemented by the following consortium of European and Russian partners:1. Intelligentsia Consultants, www.intelligentsia�consultants.com,

Project Coordinator2. Inno TSD SA, www.inno�group.com3. Fraunhofer�IIS, www.iis.fraunhofer.de4. Russian Technology Transfer Network, www.rttn.ru5. Moscow Institute of Electronic Technology, http://eng.miet.ru6. St Petersburg State Polytechnical University, www.spbstu�eng.ru

In particular, this guide has been prepared by the following group of experts:Yury ALFEROV, RTTN, [email protected](lead expert)Anton YANOVSKY, RTTN, [email protected] (lead expert)Alexander LARCHIKOV, MIET, [email protected] KOROTKOV, SPbSPU, [email protected] PYATENKO, Fraunhofer�IIS, [email protected] BRANDON, Intelligentsia Consultants, gilesbrandon@intelligentsia�consultants.com

We hope you enjoy browsing this promotion guide and it helps to strengthen future EU�Russia semiconductor design cooperation.

If you would like further information about the FP7 SEMIDEC project and its activities and events, please visit the project website: www.semidec�ru.eu

The search and identification of Russian semiconductor design organizations included in this promotion guide was made by SEMIDEC experts in collaboration with the Gate2RuBIN project (Enterprise Europe Network – Russia). Gate2RuBIN (Gate to Russian Business and Innovation Networks, www.gate2rubin.ru) provides Russian innovative companies and organisations with services aimed at searching for partners and developing business and R&D cooperation (including joint FP7 projects) with Europe. This promotion guide is also disseminated in Europe via the Enterprise Europe Network (www.enterprise�europe�network.ec.europa.eu).

Giles BRANDONIntelligentsia Consultants LtdFP7 SEMIDECProject coordinator

Dr. Alexander KOROTKOVSt Petersburg State Polytechnical UniversityFP7 SEMIDECRussian scientific leader

Johann HauerFraunhofer�IISFP7 SEMIDECEuropean scientific leader

DisclaimerNeither the European Commission nor any person acting on behalf of the Commission is responsible for the use, which might be made of the following information. The views expressed in this report are those of the authors and do not necessarily reflect those of the European Commission

© FP7 SEMIDEC, 2010�2011

Reproduction is authorised provided the source is acknowledged

Promotion guide of Russian Semiconductor Design Organisations

SEMIDEC PROMOTION GUIDE OF RUSSIAN SEMICONDUCTOR DESIGN | Overview of Russian Semiconductor Design

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TABLE OF CONTENTS

1. OVERVIEW OF RUSSIAN SEMICONDUCTOR DESIGN ...........................................................................................4

1.1. BACKGROUND TO THE RUSSIAN SEMICONDUCTOR SECTOR..........................................................................41.2. STRENGTHS OF THE RUSSIAN SEMICONDUCTOR SECTOR .............................................................................61.3. INTERNATIONAL COOPERATION IN SEMICONDUCTOR DESIGN.......................................................................8

2. RUSSIAN SEMICONDUCTOR DESIGN ORGANISATIONS ......................................................................................11

IC DESIGN CENTRE “ALFA CRISTAL” ................................................................................................................13INTEL LABS ST. PETERSBURG(INTEL LABS DEPARTMENT IN RUSSIA) ......................................................................14JOINT-STOCK COMPANY RESEARCH INSTITUTE OF SEMICONDUCTOR DEVICES ........................................................15ST PETERSBURG STATE POLYTECHNICAL UNIVERSITY, DEPARTMENT OF TELEMATICS ...............................................17ST PETERSBURG STATE POLYTECHNICAL UNIVERSITY, DEPT OF ELECTRICAL ENGINEERING & TELECOMMUNICATIONS ...19DIGITAL SOLUTIONS, LLC, SPE.......................................................................................................................21FEDERAL STATE UNITARY ENTERPRISE "MICROELECTRONIC RESEARCH INSTITUTE "PROGRESS" ..............................23IDM LTD ....................................................................................................................................................25IDM-PLUS.................................................................................................................................................27EPIEL JOINT STOCK COMPANY........................................................................................................................29PKK MILANDR JSC.......................................................................................................................................31RESEARCH AND PRODUCTION COMPANY "SENSOR IS”, LLC................................................................................33NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI, DEPARTMENT OF MICRO- AND NANOELECTRONICS ...........................................................................................35NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI, DEPARTMENT OF ELECTRONICS .............................................37MIKRON JOINT STOCK COMPANY ...................................................................................................................39RESEARCH CENTRE "MODULE" JSC.................................................................................................................41RESEARCH INSTITUTE OF MATERIAL SCIENCE AND TECHNOLOGY ..........................................................................43


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SKOBELTSYN INSTITUTE OF NUCLEAR PHYSICS LOMONOSOV MOSCOW STATE UNIVERSITY.......................................45 SMC “TECHNOLOGICAL CENTRE” OF MOSCOW STATE INSTITUTE OF ELECTRONIC TECHNOLOGY...............................47 VORONEZH INNOVATION & TECHNOLOGY CENTRE ............................................................................................49 VLADIMIR STATE UNIVERSITY .........................................................................................................................51 MOSCOW STATE INSTITUTE OF ELECTRONICS AND MATHEMATICS .......................................................................53 ELECTRONIC VLSI ENGINEERING AND EMBEDDED SYSTEMS RESEARCH AND DEVELOPMENT CENTER OF MICROELECTRONICS.........................................................................................54 IOFFE PHYSICAL TECHNICAL INSTITUTE OF RUSSIAN ACADEMY OF SCIENCE ............................................................56 SAINT PETERSBURG STATE ELECTROTECHNICAL UNIVERSITY "LETI"......................................................................57 TAGANROG INSTITUTE OF TECHNOLOGY (SOUTHERN FEDERAL UNIVERSITY), CENTRE “NANOTECHNOLOGIES” ............59 "LABORATORY OF INNOVATION TECHNOLOGY" LTD ...........................................................................................60 ELNAS ........................................................................................................................................................62 NEVATRON .................................................................................................................................................62 DESIGN CENTER KM211 ..............................................................................................................................62 HOLDING JOINT STOCK COMPANY “NEVZ‐SOYUS” ............................................................................................62 OPEN JOINT STOCK COMPANY “ENGEENIRING CENTRE FOR MICROELECTRONICS”..................................................70 INSTITUTE FOR PHYSICS OF MICROSTRUCTURES, RUSSIAN ACADEMY OF SCIENCES .................................................72 TOMSK STATE UNIVERSITY OF CONTROL SYSTEMS AND RADIOELECTRONICS (TUSUR) / RESEARCH‐EDUCATIONAL CENTER "NANOTECHNOLOGIES".................................................................................74 “FID ‐ TECHNIQUE” GROUP ..........................................................................................................................76 KOTELNIKOV INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (SARATOV BRANCH) OF RAS, PHOTONICS LABORATORY..............................................................................................................................78 SOUTH RUSSIA STATE UNIVERSITY OF ECONOMICS AND SERVICE..........................................................................80 JOINT STOCK COMPANY "ZELENOGRAD NANOTECHNOLOGY CENTER" ....................................................................82 LIMITED LIABILITY COMPANY “NANOELECTRONIC SYSTEMS”................................................................................85 JOINT STOCK COMPANY “ECOLOGICAL SENSORS AND SYSTEMS” ..........................................................................87 JOINT STOCK COMPANY “PRACTIC‐NC” ..........................................................................................................89

3. ANNEX – TABLE OF SEMICONDUCTOR R&D COMPETENCIES ...........................................................................91

SEMIDEC PROMOTION GUIDE OF RUSSIAN SEMICONDUCTOR DESIGN | Russian Semiconductor Design organisations

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1. OVERVIEW OF RUSSIAN SEMICONDUCTOR DESIGN

1.1. BACKGROUND TO THE RUSSIAN SEMICONDUCTOR SECTOR

Russia has a proud heritage in semiconductor components and electronic based miniaturized systems dating from the Soviet era. It is one of a few countries in the world to have in depth knowledge and capabilities spanning research, design and production of microelectronic and integrated circuits. This strong background forms a basis for Russia’s interest to collaborate with Europe. Russia’s considerable expertise spans across universities, design and research institutes, and industrial companies. Following the collapse of the Soviet Union in 1991, the Russian electronics industry experienced a dramatic decline in investment and domestic demand. Since the late 1990s government support for the electronics industry has grown, but the Russian electronic industry still remains insufficiently competitive compared to the global industry and requires restructuring, new technologies and production equipment. There still exists a school for training highly skilled professionals in Russia, which is based on a unique system of polytechnic education. However, the level of human resources in the electronic branch is heavily depleted. Today, the Russian electronic industry comprises about 200 organisations ‐ 121 industry organisations, 18 production organisations, and 61 scientific organisations. Amongst them there are 36 federal state unitary enterprises and 164 open joint stock companies. About 57% of parts produced by the Russian electronics industry consist of electronic based components: microchips and semiconductor devices (23%), electronic discharge devices (19%), electro vacuum devices (14%), and optoelectronic devices (1%). The main manufacturers of integrated circuits are Angstrem JSC and Mikron JSC, which are both based in Zelenograd near Moscow. Angstrem was established in 1963 as a specialized research and production complex for development and implementation of advanced IC chip manufacturing technologies. Angstrem developed the country’s first microprocessor, 4‐Kbit DRAM ICs, single‐chip microcomputer, 32‐bit microprocessor. Today, the company’s manufacturing facilities produce 1.5‐2.0 μm IC chips on 100 silicon wafers using CMOS, BiCMOS and MOS process technologies; and sub‐micron (0.8 – 1.2 μm) CMOS and BiCMOS LSI and VLSI chips on 150 mm wafers using CMOS and BiCMOS technologies. Mikron designs and produces integrated circuits for various devices from electronic games, TV sets and watches to space apparatus, supercomputers and multi‐dimension control systems. Mikron produces about 30,000 4” wafers monthly. A number of universities and Institutions have their own “clean rooms” to produce and to conduct research and investigation. Among them are MIET, MEPHI, LETI, Taganrog Institute of Technology and Ioffe Physical Technical Institute.


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Today, the Russian electronics market is growing rapidly driven by national multibillion rouble projects in fields such as human healthcare, education, and construction. For example, the market size in 2008 was close to $10 billion with two thirds dependent upon federal demand and the other third from private consumers. On the other hand the Russian IC market is stagnating, about 80% of ICs are imported. Long term business‐government strategy is required for its development.

Russian IC market, 2007-2015г $ mln.

Source: Frost&Sulliwan , 2010

The Russian government places strong emphasis on developing Russia’s R&D base in electronics and nanotechnology. For example, the government programme “Development electronic component base and radioelectronics for 2008‐2015”1 aims to create the industrial‐technological basis for producing a new generation of competitive and knowledge‐intensive technologies for air and sea transport, automotive transport, engineering and power equipment. The total programme budget is 187 billion roubles (approx 4.1 billion euro). Furthermore, the government has invested 130 billion roubles (approx 2.9 billion euro) in 2007 to establish the state corporation “RUSNANO”2. The mission of RUSNANO is to advance Russia to become a world leader in the field of nanotechnologies. The priority of RUSNANO is commercialization of nanotechnology projects with high business potential and/or social benefit.

1 http://fasi.gov.ru/fcp/electro/fzp.doc

2 www.rusnano.ru


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In recent years, Russian private investors have begun investing in the electronics industry for the first time ever. However, it presents a challenge for the new owners who are not used to the industry’s complexities and unusually long – by Russian standards – investment payback periods.

1.2. STRENGTHS OF THE RUSSIAN SEMICONDUCTOR SECTOR

In general terms, the Russian semiconductor sector features a number of strengths, which makes it attractive for European microelectronics companies and research organisations:

Russian Semiconductor Sector – Main Strengths S1. Good educational and theoretical basis of Russian experts

S2. Good contacts between Russian and European experts based on past cooperation projects

S3. Wide variety of nanoelectronics applications are being developed and introduced

S4. Comparative level of salaries of Russian experts is less then in Europe

S5. Strong Russian government support to microelectronics sector

S6. Strong growth in the Russian semiconductor market


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In specific research terms, Russian organisations demonstrate strengths relevant to semiconductor research priorities defined by the EU’s ENIAC JTI and FP7 ICT programmes. The organisations and their research strengths are highlighted in the following table:

European Research Priorities (ENIAC JTI and FP7 ICT)

Russian Organisation (Specific Research Topic)

Design of energy efficient electronic

systems, and thermal effect aware design

St Petersburg State Polytechnical University, IC Design Lab (Design of Low Power Integrated Circuits)

Integration of heterogeneous functions:

3D, System‐in‐Package, Network‐on‐

Chip, wireless (microwave, mm‐wave and THz) systems

R&D Institute of Electronic Engineering, Voronezh (RF‐design).

Ioffe Physical‐Technical Institute, Russian Academy of Sciences, St.Petersburg (THz devices).

Moscow State Institute of Electronic Technology has a network of Multi‐Access Centres (MAC) covering the full cycle of electronic production.

Institute of Semiconductor Physics of the Russian Academy of Sciences (self‐forming precise 3D nanostructures for future nanoelectronic and nanomechanical devices).

Methods for reuse of IP blocks, test and verification

Institute of Design Problems in Microelectronics of the Russian Academy of Sciences (Test and verification).

Scientific and Research Institute of Microelectronic Devices (design engineering on the basis of repeated use of IP‐blocks, the complete SoC design methodology).

Design solutions for moving the

application boundary between hardware and software to fit performance needs

Research Centre "Microsystems & Development Automation" (MicroStyle, Ltd.), Moscow.

Research Centre "Elvees" SPC (Electronic Computer and Information Systems), Zelenograd, Moscow (High level integration, digital signal processing).

Platoform Ltd (software and hardware for various automated systems).


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Reliability‐aware design including

EMR/EMC requirements

St Petersburg State Polytechnical University, Department of Electrical Engineering Research (EMC analysis).

Moscow Energetics Institute (heuristic algorithm for designing multilayered commutation boards).

Better modelling of devices at all design levels into circuit/system design

Institute of Design Problems in Microelectronics of the Russian Academy of Sciences (Models).

Design platforms and interfaces for

mixed/new technologies

IDM Ltd (multimedia computing platforms and hardware components).

Design for manufacturability taking into account increased variability of new processes

Research and Production Complex “Technological Centre” (impact resistance testing of polysilicon MEMS accelerometers).

Standardisation, including interoperability aspects

R&D Institute “Electronstandard”, St. Petersburg (standardisation).

1.3. INTERNATIONAL COOPERATION IN SEMICONDUCTOR DESIGN

Russian semiconductor organisations are eager to develop their international cooperation in semiconductor design. Indeed, many already have collaboration experience in areas of research, design and production as the following examples illustrate:

Examples of FP6 & FP7 research cooperation: • FP6 DELILA – Development of Lithography Technology for Nanoscale Structuring of

Materials Using Laser Beam Interference. DELILA is a recently completed 3 year project that involved the Institute of Applied Physics of

the Russian Academy of Sciences (IAP) and was funded under the EC’s Sixth Framework Programme (FP6). The main aim of the 2M euro funded project was to research and develop a new production technology for the high resolution fabrication – better than 40nm ‐ of 2D and 3D nanostructures and devices. In particular, DELILA aimed to enable low cost and large volume production of surface structures and patterns with nanometric resolution. The international project was led by Cardiff University (UK) and involved Tampere University of Technology (Finland), SILIOS Technologies SA (France) and Centro de Estudios e Investigaciones Técnicas de Gipuzkoa (Spain), as well as IAP. During the project, IAP had lead responsibility for the development of the multiple beam interference lithography technology. And, using the new system, the DELIA team was able to successfully fabricate high resolution nanostructures with feature sizes of ~30nm for direct writing as well as modifications of ~5nm.


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• FP6 SEMINANO – Physics and Technology of Elemental, Alloy and Compound Semiconductor Nanocrystals: Materials and Devices.

The main aim of SEMINANO was to develop fundamental knowledge in production techniques, characterization and methods of application of semiconductor Nan crystals to light emitting devices and floating gate memories. The project was broken down into 3 main areas: 1) Preparation of Is and Gee Nan crystals in different media and processed by various techniques; 2) Production and characterisation of some alloy and compound semiconductor Nan crystals; and 3) Application of the materials studied in the first two areas to the devices mentioned above. Led by the Middle East Technical University (Turkey), the project was implemented by a consortium of eleven international partners including the Moscow‐based Surface Phenomena Research Group LLC (SPRG). SPRG was deeply involved in several research activities including optimisation of the annealing parameters and luminescence properties of P, B, N doped SiO2:Si nanocomposite and P, B doped Al2O3:Si nanocomposite.

• FP7 FEMTOBLUE – Blue Femtosecond laser implemented with group‐III nitrides. The goal of the project is to create a new technology base for ultrafast semiconductor laser

diode devices producing femtosecond optical pulses in the blue and violet spectral range. Based on advanced group‐III nitride epitaxial growth and device fabrication techniques. This new technology will lay the foundation for miniature portable femtosecond lasers in the blue‐violet that will replace traditional sources like mode‐locked frequency doubled Ti: Sapphire lasers, Xenon and dye lasers. It will enable numerous new techniques and developments in the fields of ultrafast optical spectroscopy, high‐resolution lithography, quantum optics, optical comb frequency standards, fluorescence decay analysis and biomedical diagnostic to be used without bulky laboratory installations. There are the main research organisations of the United Kingdom, Germany, Switzerland and Russian Federation among the project’s partners. The project has started in September 2009 (http://femtoblue.epfl.ch).

• FP7 NANOINTERFACE – Knowledge‐based multi‐scale modelling of metal‐oxide‐polymer interface behaviour for micro‐ and nanoelectronics

Micro‐ and nano‐electronic components are multi‐scale in nature, caused by the huge scale differences of the individual materials and components in these products. Consequently, product behaviour is becoming strongly dependent on material behaviour at the atomic scale. To prevent extensive trial‐and‐error based testing for new technology developments, new.

Furthermore, new and efficient micro‐ and nano‐scale measurement techniques are developed for obtaining detailed information about the most important phenomena at micro‐ and nano‐scale and fast characterisation and qualification of SiPs. An additional important distinguishing part of this project is that, due to the composition of the consortium, the whole industrial development chain is covered: from material development, multi‐scale models and experimental methods towards a fully functional commercial software package, ready to be used within an industrial environment.


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Leading research Institutes of France, The USA, Netherlands, Germany, The UK and Russian Federations are the members of the consortium, which has finished its work in September 2011 (http://www.nanointerface.eu/).

Current examples of FP7 Support Actions: • FP7 EU‐RU.NET – Linking R&D Strategies, Foresight and Stimulation of EU‐Russia

Cooperation in Nanoelectronics Technology. EU‐RU.NET aims to strengthen EU‐Russia cooperation in nanoelectronics technology. The

Russian partners involved are: Moscow State University, Russian Academy of Sciences (RAS), St.Petersburg Electrotechnical University, Scientific Research Center for Molecular Electronics and Mikron Factory and State University – Higher School of Economics (Moscow). See http://www.eu‐ru.net.

• FP7 NANORUCER – Mapping the NANOtechnology innovation system of RUssia for preparing future Cooperation between the EU and Russia.

NANORUCER is surveying the main Russian research infrastructures active in nanotechnology and nano‐structured materials as a basis for initiating future cooperation between the EU and Russia. The Russian partner involved is: Institute for the Study of Science of RAS. See http://nanorucer.de.

• FP7 SEMIDEC – Stimulating Semiconductor Design Cooperation between Europe and Russia. SEMIDEC aims to stimulate strategic cooperation in the design of semiconductor components and electronic based miniaturised systems between Europe and Russia. The Russian partners involved are: Moscow Institute of Electronic Technology, St. Petersburg State Polytechnical University and the Russian Technology Transfer Network. See http://www.semidec‐ru.eu.

• FP7 SMETHODS ‐ SME's Training and Hands‐on in Optical Design and Simulation Optical Design and Simulation have a tremendous potential to facilitate disruptive research and

product innovation. Since optical systems are key components in a broad range of modern devices, optical design plays an essential role in the technology of the XXI‐st century. The European consortium offering SMETHODS consists of 7 partners that are the most prominent academic institutions in optics in their countries. From the Russian side the Saint Petersburg State University of Information Technologies, Mechanics and Optics participates in this FP7 activity. Through fully integrated collaborative training sessions, the consortium will provide professional assistance as well as hands‐on training in a variety of design tasks on imaging optics, non‐imaging optics, wave optics and diffraction optics. Nowadays there exists a strong demand for this kind of support action. Large companies have the resources to organize the necessary training courses internally, but SME's lack such abilities. In the absence of systematic trainings such as SMETHODS, SME engineers often have to improve their professional abilities with less efficient autodidactic means. This training, which is unique in Europe, will fill the gap between academic courses given at universities and training activities provided by software producers that are focused on specific design software. In the first phase, SMETHODS will provide support activities to SMEs, researchers and companies during 30 months of EC financial support. During this period SMETHODS will, based on experience gained, consider how SMETHODS can continue to serve and support its users after EC funding has stopped. SMETHODS has started in September 2011.


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2. RUSSIAN SEMICONDUCTOR DESIGN ORGANISATIONS

The Russian organisations featured in this guide can all demonstrate semiconductor design R&D activities and offer competencies and technologies for collaborative research projects. As can be seen from the following table, their main semiconductor R&D activities are in the areas of IC design and systems design. Amongst the most popular types of circuits and systems design can be pinpointed mixed IC, analogue IC, digital IC and systems on a chip (SoC). Furthermore, the majority of Russian organisations work with semiconductor materials on the basis of silicon (Si) and the following technologies: CMOS / BiCMOS, bipolar and silicon‐on‐insulator (SOI).

Areas of R&D Activities Number of Russian semiconductor design organisations (Out of 41)

Circuits and Systems Design/Testing

Design areas

System design 22

IC‐Design 27

Process Modelling 19

Nanotechnology devices 15

Types

Analogue IC 23

Digital IC 21

Mixed IC 27

SoC 26

FPGA 15

RF IC 18

Semiconductor Materials

Si 28

Si/Ge 12

GaAs 8

GaN 4

Other 10

Technology

CMOS/ BiCMOS 28

Bipolar 23

Flexible & Hybrid boards 6

SOI 18

Other 14


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In terms of application, the Russian organisations are mainly interested to offer their developments and competencies for collaborative projects in the following domains:

Telecommunications,

Transport, safety and security,

Semiconductor manufacturing approaches, processes and tools.

Areas of R&D Activities Number of Russian semiconductor design organisations (Out of 41)

Semiconductor manufacturing

Increasing industrial process variability 7

Semiconductor manufacturing approaches, processes and tools

20

Novel process/metrology equipment and materials

18

Flexible, organic and large area electronics (sensors, RFID, TFTs and others)

18

Photonics 12

Energy

Electro‐magnetic interference, heat dissipation, energy consumption

8

Energy efficient electronic systems, thermal effect aware design

18

Autonomous energy efficient smart systems 12

Transport, safety and security 24

Telecommunications 26

Biomedical microsystems and smart miniaturised systems

18

Heterogeneous systems, integration of heterogeneous functions

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SEMIDEC PROMOTION GUIDE OF RUSSIAN SEMICONDUCTOR DESIGN | Russian Semiconductor Design organisations

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IC DESIGN CENTRE “ALFA CRISTAL” Acronym: Alfa Cristal

Type: Company Size: 10–30 employees Brief description of organisation: IC design Centre is a small fabless enterprise. The company mainly designs devices based on CMOS technology such as: amplifiers, filters, ADC, RF‐circuits, low‐power logic and memory. The company’s microelectronics research projects during recent years include “Low noise amplifier and tracking filter for DTV” LG Electronics, Korea, 2006; and “Switched‐Capacitor channel filter” Federal Program START, 2006‐2007. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing

Design areas Types Semiconductor Materials

IC‐Design,

Analogue IC,

Mixed IC;

SoC

Technology

CMOS/ BiCMOS,

SOI

Applications


Transport, safety and security

Telecommunications

R&D competences and/or projects proposals for international cooperation:

Low power IC design

RF IC design

Contact details: Address: 196084, St. Petersburg, Moscovskiy Ave. 79 – А, off. 9Н Head of organisation (director): Dmitry Morozov Contact person: Dmitry Morozov, Deputy Director Tel: +7 921 339 67 21 E‐mail: [email protected]


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INTEL LABS ST. PETERSBURG (INTEL LABS DEPARTMENT IN RUSSIA) Acronym: STM lab (SoC Tools and Methodology)

Type: Company Size: 10‐30 employees Brief description of organisation: Intel Labs St. Petersburg (SoC Tools and Methodology Lab) has been working on research and development of tools for SoC design, programmable devices (accelerators) using the methodology of high level synthesis (HLS) and algortihms for telecommunications, video processing and compression as applications for mapping of future SoC. The methodology for design of complex SoC uses a so‐called workload‐driven (or application driven) approach when the given application (or set of applications) jointly with a template of future SOC device are inputs for Design Tools and expected outputs are RTL (as input for further using 3rd party EDA tools to get gate‐level and layout chip design), Simulator(s), Firmware, retargetable programmable tools and testbench for future SoC. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design SoC Si

Technology

CMOS/ BiCMOS,

Applications

Telecommunications



high level synthesis (HLS) and algortihms for telecommunications

video processing and compression

Contact details: Address: ZAO “Intel A/O”, 160,Leninsky prospect, St.Petersburg, 196247, Russia Head of organisation (director): Oleg Semenov

Contact person: Oleg Semenov, Research Director Tel: +7‐812‐3319476 Fax: +7‐812‐3319431 E‐mail: [email protected]


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JOINT‐STOCK COMPANY RESEARCH INSTITUTE OF SEMICONDUCTOR DEVICES Acronym: JSC RISD

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The Research Institute of Semiconductor Devices was founded in Tomsk in 1964 as a company of the

electronics industry for the development and mass production of electronic devices based on AIIIBV

semiconductor technology. JSC RISD’s materials research and development of methods for producing

epitaxial structures of micron and submicron thicknesses with complex doping profiles has allowed the

creation of a variety of discrete devices and integrated circuits on GaAs. Since 2004, growth rates ranged

from 130 to 180 percent a year on areas of solid‐state microwave electronics, lighting, solar energy and

optoelectronics. JSC RISD contributed scientific and technical expertise to the project "Organisation of

semiconductor light sources production for industrial applications". Three LED companies will be created

in Moscow, St. Petersburg and Tomsk. The Institute has been involved as an active contributor to a

number of projects together with universities and institutions of Russian Academy of Science to develop

materials, technologies and integrated circuits for:

- matrixes of X‐ray sensors,

- matrixes of LED light sources,

- transceiver modules of diagnostic systems,

- medical equipment for physiotherapy, telemedicine and gynecology,

- microfluidal chips, micromembrans and sensors,

- solar grade materials and batteries based on it,

Complex functional products have been designed (including systems‐on‐a‐chip) in the centimetre and

millimetre‐wave bands based on the company’s own development and manufacturing integrated circuits.

R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Process Modelling

Analogue IC,

RF IC

GaAs


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Technology

Other

Applications

Increasing industrial process variability



Photonics


Autonomous energy efficient smart systems



RF circuit design

Sensor design

Contact details: Address: 634034, Russia, Tomsk, Krasnoarmeyskaya st., 99a Web: www.niipp.ru Head of organisation (director): Eduard Yauk Contact person:

Vasily Yurchenko, Deputy Director responsible for R&D Tel: +7 3822‐558296 E‐mail: [email protected]


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ST PETERSBURG STATE POLYTECHNICAL UNIVERSITY, DEPARTMENT OF TELEMATICS Acronym: SPbSPU

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The Department of Telematics, established in 2000, is engaged in research in the field of network technologies for data and information processing and acquisition for measuring and computing systems, virtual instruments, devices, information security and tools of space robotics. The department has developed a telematics platform for creating clusters of virtual instruments with a reconfigurable architecture based on FPGA technology. These instruments are used at electronic industry enterprises of St. Petersburg. The department has also established and applied a hardware and software platform for network processors used in security systems for high‐speed computer networks. The Department takes part in research programmes and space experiments of the Russian segment of the International Space Station in long‐term projects concerning remotely controlled reconfigurable robotic systems and space vehicles development. The research work is carried out in cooperation with the Institute of Mechatronics and Robotics DLR, Germany. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


FPGA

Technology

Other

Applications





Telecommunications


Measuring devices

High‐speed communication network


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Contact details: Address: 29 Polytechnicheskaya st., St. Petersburg, 195251 Russia Web: www.spbstu.ru Head of organisation (rector): Mikhail Fedorov Contact person:

Vladimir Zaborovskiy, Head of the Department, Professor Tel: +7 812 5529246 E‐mail: [email protected]


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ST PETERSBURG STATE POLYTECHNICAL UNIVERSITY, DEPT OF ELECTRICAL ENGINEERING & TELECOMMUNICATIONS

Acronym: SPbSPU

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The main activities of the Department are focused on microelectronic and nanoelectronic IC design. Methods of synthesis, design, and computer simulation of analogue, discrete time, mixed, and digital circuits ‐ including Switched‐Capacitor (SC) and Continuous Time Amplifiers and Filters, RF circuits, Analogue‐to‐Digital Converters (ADCs), and digital logic blocks with low power consumption ‐ have been developed. The design of circuits is mainly oriented to applications in wireless and wireline communication systems. Research projects with the following partners have been realized in the area of microelectronics during recent years by staff of the Department: LG Electronics, Korea, 2006; West Bengal University of technology, India, 2006; and Fraunhofer Institute, Germany, 2003, 2007‐08. Research has been supported by Deutsche Forschungsgemeinschaft (DFG) and the Russian Foundation for Basic Research. The Department is a member of EUROPRACTICE and has a license to use Cadence software. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

Analogue IC,

Digital IC,

Mixed IC;

SoC

FPGA

RF IC

Technology

CMOS/ BiCMOS,

SOI

Applications



Telecommunications


20


Low power IC design, analogue and digital

Ternary coding circuits

Numerical and symbolic methods of circuit simulations

Sensor networks

FRID

SOI

Contact details: Address: 29 Polytechnicheskaya st., St. Petersburg, 195251 Russia Head of organisation (rector): Mikhail Fedorov Contact person:

Alexander Korotkov, Professor Tel: +7 812 5527639 Fax: +7 812 2909993 E‐mail: [email protected]


21

DIGITAL SOLUTIONS, LLC, SPE Acronym: Digital Solutions, LLC, SPE

Type: Company Size: 10‐30 employees Brief description of organisation: LLC, SPE Digital Solutions was founded in 2003 for algorithm design and signal processor tasks solution on modern element base. The company’s core cooperation activities are:

• Development of radioelectronic systems and devices;

• VLSI development, including “systems‐on‐chip, according submicron design rules;

• Development of algorithms for digital signals and images processing (demodulation, detection and

recognition, neuro algorithm);

• Development of LED information display system;

• Development and delivery of data transmitting system on radio‐channels, cable channel and fibre‐optic

line.

LLC, SPE Digital Solutions develops and offers digital hardware platforms, for special‐purpose control modules and automation system modules, system verification on PLD and VLSI. The company develops custom chips with technology based standard of 0.25 μm and 0.18 μm, 0.13 μm. Currently, the company is working towards design cycles based on 0.09 μm standard. ARM9 and SPARC v.8 processors cores have been developed and a range of our own original complex functional units and their testing has been implemented “in silicon”. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Process Modelling

Digital IC,

Mixed IC;

SoC

FPGA


22

Technology

CMOS/ BiCMOS,

Bipolar

Flexible & Hybrid boards

SOI

Other

Applications






Telecommunications


ASIC and IP design (digital, analogue, mixed‐signal);

FPGA verification board design;

controllers for industrial automation, robotics and process control and measurement

R&D in electronics, signal and image processing and neuro‐algorithms realization.

Contact details: Address: 127254, Moscow, Ogorodny proezd, 5/7 Web: http://www.dsol.ru Head of organisation (director): Alexander Rutkevich Contact person:

Alexander Rutkevich, CEO Tel: +7(495) 728‐97‐06 Fax: +7 (495) 745 – 42‐18 E‐mail: [email protected]


23

FEDERAL STATE UNITARY ENTERPRISE "MICROELECTRONIC RESEARCH INSTITUTE "PROGRESS" Acronym: MRI PROGRESS

Type: R&D organisation/University Size: 30‐80 employees Brief description of organisation: Federal State Unitary Enterprise "Microelectronic Research Institute "Progress" was founded in 1987. At present there are about 80 high‐qualified employees. MRI “Progress” is focused on the development of SOC/ASIC, mixed signal and RF IC in the field of communication, digital TV, navigation, radar system and car electronics. Our engineers are experienced with the EDA software Cadence. MRI “Progress” has used CMOS/BiCMOS 0.5 ‐ 0.13um and SiGe 0.25 – 0.13um manufacturing technology and successfully completed many ICs. MRI “Progress” has established a long‐term and stable cooperative relationship with many well‐known manufacturing companies like TSMC, UMC, X‐FAB, and IHP. We always open to cooperation in ASIC design and development service. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Analogue IC,

Digital IC,

Mixed IC;

SoC

RF IC

Si

Si / Ge

Technology

CMOS/ BiCMOS,

Bipolar

SOI

Applications





Telecommunications



24

Contact details: Address: 125183, Moscow, Cherepanov passway,54 Site : www.mri‐progress.ru Head of organisation (director): Vladimir Nemudrov Contact person: Alexey Aleksandrov,

Digital IC Development Department Head Tel: +7 499 153 ‐ 0341 Fax: +7 499 153‐0361 E‐mail: [email protected]


25

IDM LTD

Acronym: IDM Ltd

Type: Private company Size: 10‐30 employees Brief description of organisation: IDM Ltd was founded in 1991 as a private company to accumulate the design skills of a group of experienced world‐class specialists in the field of IC design. IDM offers services in the field of digital, mixed‐signal, analogue and RF – IP and IC design. In the framework of international cooperation IDM design team has demonstrated the ability to provide cost‐effective and high‐quality design services for well‐known foreign companies:

‐ Mietec‐Alcatel, Belgium (1994) ‐ GEC Plessey Semiconductors, UK (1996‐1998) ‐ Mitel Semiconductor, UK‐Canada (1998‐2000) ‐ Zarlink Semiconductor, UK‐Canada (2001‐2005) ‐ Intel, USA/UK (2005‐2009) Analogue/Mixed‐signal/RF design experience:

Developed analogue and RF blocks for various RF ICs, including LNAs, VCOs, AGC, VGAs, harmonic rejection mixers, RSSI, RF power amplifiers, RF detectors, modulators, crystal oscillators, filters, ADCs, DACs, bandgap references, etc. and more complex modules such as receiver and transmitter paths. Having a highly‐experienced design team in conjunction with

smart project management has enabled IDM to achieve first silicon success in all projects. IDM's R&D in the field of advanced high‐performance computing architectures is targeted to implementation on nanoscale technologies: ‐ Development of high‐performance programmable and dynamically reconfigurable heteroprocessor SoC platform based on configurable multi‐architecture processing element. ‐ Development of high‐abstraction level design environment for heteroprocessor SoC HW/SW co‐design and co‐simulation. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

Analogue IC,

Digital IC,

Mixed IC;

SoC

RF IC

Si

Si / Ge

Technology

CMOS/ BiCMOS,

Bipolar


26

SOI

Applications

Telecommunications




Advantages for long‐term partnership:

Highly qualified, productive and cost‐effective IDM design team provides of innovative leading‐edge

solutions for the analogue and RF ICs

Fully equipped design Centre and stable business environment

Many years’ experience in international cooperation and the ability to work in distributed international

design teams on the basis of international industry design standards

R&D competences and/or projects proposals for international cooperation: IDM is looking for foreign partner/customer to provide high‐quality and cost‐effective design services in the field of mixed‐signal, analogue and RF IP and IC design. IDM is looking for foreign partner for joint developments in the field of multi‐purpose high‐ performance computing and development of multi‐ and hetero‐processors SOC and appropriate system‐level design environment. Contact details: Address: stage 4A, building 23, construction 5, passage 4806 Zelenograd Moscow 124498 Russia Web: http://www.idm.ru Head of organisation (director): Vladimir Kozlov Contact person:

Sergey Artamonov, Chief Technical Officer Tel: +7(499)7344221 Fax: +7(499)7102275 E‐mail: [email protected]


27

IDM‐PLUS Acronym: IDM‐PLUS

Type: Company Size: 30‐80 employees Brief description of organisation: IDM‐PLUS design centre was founded in 2004. Its main areas of activity are: • Development and contract manufacturing of microelectronic element base; • Development and manufacturing of integral solutions for final consumers; • Development of integrated chips with design rules of 0,18 μm; • Layout analysis of ready‐made structures with elements' size of 18 μm, obtaining VLSI layers

slices, systems‐on‐chip reverse engineering, electrical circuits recovery; • Organisation of measurements and tests of national and foreign microchips; • Elaboration of developed items at the scientific and technological level; • Company integration to world service level according IP design; • Training of high‐skilled specialists. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Analogue IC,

Digital IC

Mixed IC;

SoC

RF IC

Si

Si / Ge

Technology

CMOS/ BiCMOS,

Bipolar


SOI


28

Applications







Telecommunications



Low power IC design, analogue and digital

RF circuit design

Front‐End and Back‐End ICs design

Turnkey service

IP‐blocks design and their integration into single‐chip ICs

Analogue blocks design (ADC, DAC, transceivers: USB1.1, RS‐232, RS‐485, LVDS; power supplies circuits,

POR, BOR, LDO, DC‐DC, etc)

VLSI prototypes creation on FPGA (Altera, Actel, Xilinx)

Models verification and testing of completed ICs on the wafer

Layout analysis of integrated structures, System‐on‐Chip reverse engineering

Development of System‐on‐Chip analogue‐digital devices

Contact details: Address: 124498 Moscow, Zelenograd, Proezd 4806, bld.5/20 (MIEE) Russia Web: http://www.idm‐plus.ru Head of organisation (director): Veniamin Stakhin Contact person: Anton Obednin, Engineering Director

Tel: +7(499) 720‐6972 E‐mail: obednin@idm‐plus.ru


29

EPIEL JOINT STOCK COMPANY

Acronym: Epiel JSC

Type: Company Size: 80‐100 employees Brief description of organisation: Epiel JSC is a Moscow‐based medium‐sized company specializing on silicon epitaxy and a provider of silicon epi deposition services for semiconductor device producers in the whole of Russia and CIS countries. Epiel is the largest supplier of silicon epitaxial wafers and epitaxial services for the Microelectronics Industry in Russia and the CIS and the partner of leading Russian electronic device manufacturers. At our production facility in Zelenograd ‐ in the suburbs of Moscow ‐ we manufacture 3"‐6" silicon epitaxial wafers for various applications including discrete devices and integrated circuits. We also produce 4" and 6" Silicon on Sapphire epi wafers. Apart from manufacturing activity we are doing a lot of R&D covering various applications of silicon epitaxy. Epiel production facility houses over 1000 square meters of class 10‐1000 clean rooms. The facility is equipped with field proven high throughput Epi Reactors capable of processing 3 to 6 inch wafers. The Quality Management System is certified to ISO 9001:2008. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


Si

Si / Ge

Si on Sapphire


30

Technology

CMOS/ BiCMOS,

Bipolar

Si on Sapphire

Other

Applications




Photonics

R&D competences and/or projects proposals for international cooperation: Silicon epi‐layer‐based solar cell manufacturing technology

One of the major current R&D projects at Epiel is focused on the application of epitaxial deposition to produce

silicon solar cells. The project aims to develop a technology to produce solar cells based on low‐cost structures with

silicon epi‐layers. One of the objectives is to enable the use of low cost materials, other than mono‐ and

multicrystalline silicon, as substrates. With this aim in view Epiel JSC is developing a specialized epi technology that

could be implemented in solar cell manufacturing.

The project requires participation of companies in the field of solar cell manufacturing, especially those researching

the potential of silicon epitaxy in solar cell production. We would also be happy to cooperate with manufacturers of

semiconductor material processing equipment, especially epitaxial equipment, in order to design and create a

prototype epi reactor for solar applications.

Contact details: Address: 124460, 1‐st Zapadny Proezd 12, bld.2, Zelenograd, Moscow, Russia Web: http://www.epiel.ru Head of organisation (director): Vladimir Statsenko Contact person:

Andrey Babaev, Head of Marketing and Business Development Department Tel: +7 495 229 73 03 Fax: +7 495 229 73 02 E‐mail: [email protected]


31

PKK MILANDR JSC

Acronym: Milandr

Type: Company Size: > 80 employees Brief description of organisation: JSC PKK Milandr company is focused on design and production of various type of modern IC for industrial applications. Milandr is a fabless company with its own test house and assembling house for metal‐ceramic packages. JSC PKK Milandr has experience in the design of 8‐bit, 32‐bit microcontrollers, memory circuits, wired interfaces transceivers and radio frequency circuits. IP blocks’ base was created. The company has experience of working with cores developed by ARM company. It has its own IP set for the design of ICs with CAN and LIN interfaces. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

Analogue IC,

Digital IC,

Mixed IC;

SoC

RF IC

Si

Technology

CMOS/ BiCMOS,

Bipolar

SOI

R&D competences and/or projects proposals for international cooperation: List of available IPs: 8‐bit microcontroller core 16‐bit DSP core, fixed point CAN 2.0B hardware USART, SPI, LIN, I2C, USB OTG, SRAM blocks, PLLs, ADCs, DES cryptoblock, Ethernet interface Trancivers RS‐232, RS‐485, CAN, LIN, LVDS Experience with application of ARM Cortex M3 and M0 cores, experience in analogue design


32

Contact details: Address: Building 6, Proezd 4806, Zelenograd, Moscow, 124498, Russia Web: http://milandr.ru Head of organisation (director): Mikhail Pavlyuk Contact person:

Alexey Novoselov, Deputy Director of Marketing Tel: +7 (495)601‐95‐45 Fax:+7 (495)739‐02‐81 E‐mail: novoselov@ic‐design.ru


33

RESEARCH AND PRODUCTION COMPANY "SENSOR IS”, LLC

Acronym: SensorIS

Type: Limited Liability Company Size: 100 employees Brief description of organisation: LLC “NPK SensorIS” was established in 2008, combining advanced scientists from Moscow Institute of Electronic Technology and Moscow Institute of Physics and Technology, whose creative potential and scientific experience work for world level design of custom ICs. We are working in CMOS 0,25‐0,09 technologies, and our strong position for analogue and mix‐signal IPs design gives leading solution for high‐speed ADC/DAC, different types of CMOS photoreceivers and other sensors, multimedia and specialized controllers and systems‐on‐chips. LLC “NPK SensorIS” is a leading Russian CMOS sensor developer and manufacturer. R&D activities and competences in semiconductor design Circuits and Systems Design/Testing


System design

IC‐Design,

Process Modelling

Analogue IC,

Digital IC,

Mixed IC;

SoC

Si

Si / Ge

GaAs

Technology

CMOS/ BiCMOS,

Bipolar

SOI

Applications





Photonics


Telecommunications



34

R&D competences and/or projects proposals for international cooperation :

R&D of digital IC;

R&D SoC;

CAD of IC

Contact details: Address: 124460, Moscow, Zelenograd, 1st Zapadny proezd,5

Web: www.sensoris.ru, www.uniqueics.com, www.omics.ru Head of organisation (director): Yury Tishin Contact person:

Denis Adamov, R&D and Production Director Tel: +7 (499) 734‐3542 Fax: +7 (499) 734‐4043 E‐mail: [email protected]


35

NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI, DEPARTMENT OF MICRO‐ AND NANOELECTRONICS Acronym: MEPhI

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: Nowadays MEPhI is a Federal research university. It cooperates with Federal Nuclear centres, specialized institutes and enterprises of the Russian Federal Atomic Energy Agency, for the purpose of professional, scientific and innovative development provision in the nuclear sphere and other high technology sectors of Russia economy. In particular, MEPhI deals with the nanotech industry, information technologies, biological systems and provides elite executive training and analyst experts including international activity in the sphere of nuclear power. The Department of Nano‐ and Microelectronics MEPhI is one of the oldest in Russia. The department is specialized in educating specialists for research centres and industry involved in nanotechnology, microelectronics, and electronics. The essential part of the research activities of the department is exploration physics of ionizing radiation effects in IC. International research and design projects for the microelectronics industry have been realized during recent years by department staff with the following countries: South Korea, Taiwan, China, USA and France. The department is already working on the EU‐Russia 7th Framework Program project “Surface ionization and novel concepts in nano‐MOX gas sensors with increased selectivity, sensitivity and stability for detection of low concentrations of toxic and explosive agents”.. MEPhI’s manufacturing and design activities are present in following directions:

Prototypes of SAW filters;

MOSFET gas sensors;

Sensor based on ceramic MEMS platform (Al2O3, ZrO2) for applications with harsh working conditions;

Matrices for IR and X‐ray detection devices;

Production small series of microelectronics devices by non‐standard technological process;

Design IC of digital microcontroller and software for one;

Production controller and safety microelectronic devices for radiation accelerator tools by request such

customers as CERN and DESY.



System design

IC‐Design,

Process Modelling

Nanotechnology

Analogue IC,

Digital IC,

Mixed IC;

SoC

Si

GaAs

Other


36

devices FPGA

Technology

CMOS/ BiCMOS,

Bipolar

Other

Applications





Photonics





Telecommunications




Low power MEMS sensors based on semiconductors and ceramics materials.

MOSFIT gas sensors

Design IC

Contact details: Address: 115409, Moscow, Kashirskoe shosse, 31 Web: http://www.mephi.ru/ Head of organisation (director): Mikhail Strikhanov Contact person:

Nikolay Samotaev, Associate Professor of Micro‐ and Nanoelectronics Department Tel: +7 (495) 585‐8273 Fax: +7 (495) 324‐8356 E‐mail: [email protected]

NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI, DEPARTMENT OF ELECTRONICS Acronym: MEPhI


37

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The Department of Electronics is one of the largest departments in the University (the staff of lecturers and tutors amounts to 37 persons). It also conducts scientific research in a number of branches: nanometer electronics, equipment for physical experiments, VLSI design, radiation hardness of electronic units, microwave electronics and many others. An important activity of the department is the design of analogue and mixed‐signal ASICs for experimental physics installations. Important prerequisites for that are the direct long‐term university license agreements with Cadence, Mentor Graphics, Synopsis and full membership of Europractice. The designed ASICs are implemented through Europractice by CMOS/BiCMOS submicron processes. Now MEPhI is the leader among Russian customers of Europractice in terms of the number of ASIC projects, manufactured via its IC service. Examples of current projects are: data‐driven read‐out chips for microstrip detectors of CBM experiment at GSI/FAIR (Darmstadt) and ones for the “Nucleon” project of the Russian space agency.

Prototype 128 channel chip for CBM (0.18 µm MMRF CMOS of UMC) 32 channel chip and test board for Nucleon (0.35 µm CMOS of AMIS)



IC‐Design,

Analogue IC,

Mixed IC;

RF IC

Si

Si / Ge


38

Technology

CMOS/ BiCMOS,

Bipolar

Applications

Read‐out ASICs for different multichannel detectors

Chips for data‐driven systems


University design Centre. Computer‐aided design of analogue and mixed signal ASICs

ASIC prototyping (both at chip and board level)

Contact details: Address: 115409, Moscow, Kashirskoe shosse, 31 Web: http://www.mephi.ru Head of organisation (director): Mikhail Strikhanov Head of department: Vladimir Stenin Contact person:

Eduard Atkin, Associate Professor, Department of Electronics, Director of University Design Centre for Analogue and Mixed Signal ASICs Tel: +7 (495)‐324‐25‐97 E‐mail: [email protected]


39

MIKRON JOINT STOCK COMPANY

Acronym: Mikron JSC

Type: Company Size: > 80 employees Brief description of organisation: JSC Mikron is the largest manufacturer of integrated circuits in Russia and CIS and is implementing an investment programme aimed at the modernization of ICs production up to the level of 180 – 90 nm. The company is the winner of the tender for the development of ICs for the State Programme "Electronic Passport of Russia", is the largest Russian exporter of ICs, and the winner of state and international awards. JSC Mikron’s devices are delivered across almost all Russian regions, CIS countries, China and South‐East Asia countries. The enterprise produces more than 500 types of electronic components. JSC Mikron’s production systems are certified under ISO 9000 and ISO 14001. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Process Modelling

Nanotechnology

devices

Analogue IC,

Digital IC,

Mixed IC;

SoC

FPGA

RF IC

Si

Si / Ge

Technology

CMOS/ BiCMOS,

Bipolar

SOI

Other

Applications






Telecommunications



40

Contact details: Address: 124460, Moscow, Zelenograd, 1st Zapadny proezd 12/1 Web: http://www.mikron.ru/ Head of organisation (director): Gennady Krasnikov Contact person:

Nikolay Shelepin, Deputy General Director for R&D, Chief Designer Tel: +7 (495) 229‐7107 Fax: +7 (495) 229‐7141 E‐mail: [email protected]


41

RESEARCH CENTRE "MODULE" JSC Acronym: RC "Module"

Type: Company Size: > 80 employees Brief description of organisation: Research Centre "Module" (RC “Module”) is an innovative Russian development company designing high‐

end RISC/DSP processors, mixed‐signal ASICs and real‐time video‐image processing systems. RC “Module” has successful experience in specialized digital and analogue‐to‐digital VLSI and systems‐on‐chip based on processor cores ARM11 RISC and NeuroMatrix® RISC/DSP and uses the well known electronic design software packages Cadence and Synopsys. RC “Module” engineers have received extensive training with the Cadence and Synopsys companies and have appropriate certificates. Besides, RC “Module” implements a full cycle of element base design, manufacture and testing:

• processor core NeuroMatrix® Core (NMC) was developed in 1996, which was used in digital signal

processing L1879ВМ1 (NM6403),

• VLSI 1879ВМ3, system‐on‐chip – fast programmable controller with built in fast‐acting analogue‐to‐digital

convertor 600 МВС and digital‐to‐analogue convertor 300 МВС were developed and manufactured in

2002. VLSI 1879ВМ3 is a prototype of Software Defined Radio (SDR)

• LSI 1879ВА1Т ‐ Universal connected machine (terminal) multi integrated input‐output channel according

State Standard Р 52070‐2003(State Standard 26765.52‐87) / MIL‐STD‐1553B was developed and

manufactured in 2004,

• VLSI 1879ВМ2 (NM6404) – digital signals processing making, which is which is a further development of

Л1879ВМ1 processor on the core NMC2 was developed and manufactured in 2006,

• Prototypes of NeuroMatrix® VLSI 1879ВМ4 (NM6405) processors of third generation on the core NMC3

were received in 2009.

Nowadays RC “Module” designs systems‐on‐chip for navigation application and digital TV. RC “Module” is one of the first Russian high‐tech companies to offer a wide range of IP‐modules for licensing. RC “Module” has licensed its processor IP‐module NMC to a leading foreign semiconductor company.


42



System design

IC‐Design,

Digital IC,

Mixed IC;

SoC

Technology

CMOS/ BiCMOS,

SOI

Applications


Telecommunications

Contact details: Address: JSC Research Centre "Module", 3 Eight March 4Th Street Box: 166, Moscow, 125190 Russia Web: http://www.module.ru/ Head of organisation (director): Andrey Adamov Contact person:

Dmitriy Fomin, Deputy Director Tel: + 7 499 152 46 61 Fax: + 7 499 152 46 61 E‐mail: [email protected] [email protected]


43

RESEARCH INSTITUTE OF MATERIAL SCIENCE AND TECHNOLOGY

Acronym: RIMST

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: Principal directions of RIMST’s activities are basic research, application development and industrial engineering of materials for military and civil electronics technology:

• single crystals and plates for large‐band‐gap

semiconductors for lasers, displays medium,

ionizing‐radiation detectors

• laser active elements basis on garnet single

crystals for laser systems of various application

• garnet epystructures for magnetooptical, ultra‐

high frequency and extremely‐high frequency

• silicon particle radiation detectors for high‐

energy physics usage, high‐resolution

spectroscopy, tomography

• quartz and glass plates for photomasks



Si

Other

Technology

SOI,

Other


44

Applications



Photonics




Telecommunications


Contact details: Address: RIMST, Building 4/2, pr. 4806, Zelenograd, Moscow, 124460 Russia Web: http://www.niimv.ru/ Head of organisation (director): Igor Ivanov Contact person:

Nikolai Zhavoronkov, Deputy Director in Science Tel: +7 (499) 720‐83‐64 E‐mail: [email protected]


45

SKOBELTSYN INSTITUTE OF NUCLEAR PHYSICS LOMONOSOV MOSCOW STATE UNIVERSITY

Acronym: SINP MSU

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: Nowadays SINP MSU carries out investigations in the spheres of cosmic‐ray astrophysics, space physics, high‐energy physics, material radiation interaction, nuclear physics, information technology and telecommunication development and nanostructure research. Silicon sensors for registration of charged particles for application in cosmic ray physics, high‐energy physics and nuclear phisics have been developed in SINP MSU for more than 20 years. Also integral and discrete multichannel electronics for semiconductor detector readings are also being developed. SINP MSU is a member of EUROPRACTICE and has a CADENCE license. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design,

Process Modelling

Analogue IC,

Digital IC,

Mixed IC;

SoC

FPGA

RF IC

Si

Si / Ge

Technology

CMOS/ BiCMOS,

Bipolar


Applications





46

Contact details: Address: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991, Russia Web: http://silab.sinp.msu.ru Head of organisation (director): Michail Panasyuk Contact person: Michail Merkin, Head of Laboratory

Tel: +7 495 932 9216 Fax: +7 495 939 5948 E‐mail: [email protected]


47

SMC “TECHNOLOGICAL CENTRE” OF MOSCOW STATE INSTITUTE OF ELECTRONIC TECHNOLOGY Acronym: SMC "TECHNOLOGICAL CENTRE" MIET

Type: R&D organisation/University Size: > 80 employees Brief description of organisation:

Scientific and Manufacturing Complex (SMC) "Technological Centre" was founded as a University Research Centre at the Moscow Institute of Electronic Engineering in June, 1988. In the middle of 1989 the main set of equipment was put into operation and at the beginning of 1990 the first chips were manufactured on the full CMOS technological route. The Institute is situated in Russia’s "Silicon Valley" ‐ in Zelenograd, a town 40 km from Moscow. There are about 400 high‐qualified employees in SMC "Technological Centre", including 8 Professors and 44 Doctors of Sciences. The average age of the staff is less than 40 years. Educational activities: training of personnel of higher qualification in the field of microelectronics, dissemination in Russia methodology of design of the radio electronic equipment on the basis of special element base with the purpose to create consumer market of native microelectronic goods. Scientific and research activities in Microelectronics, Microsystem Technologies, Microelectronic equipment. Manufacturing activities:

Production of prototypes and specialized LSI, integral sensors and MEMS of small series;

Production of prototypes and semi‐ conductor devices of small series according to non‐standard process flow;

Photomasks production.



IC‐Design,

Process Modelling

Analogue IC,

Digital IC,

Mixed IC;

Si


48

Technology

CMOS/ BiCMOS,

SOI

Applications




Contact details: Address: Zelenograd, Moscow, 124498 Russia Web: http://www.tcen.ru/ Head of organisation (director): Alexander Saurov Contact person:

Andrei Efimov, Head of Department Tel: +7 499 7344521 Fax: +7 495 9132192 E‐mail: [email protected]


49

VORONEZH INNOVATION & TECHNOLOGY CENTRE Acronym: VITC

Type: Company Size: 10‐30 employees Brief description of organisation: System‐on‐chip design‐centre (VITC) is specialised in analogue ICs for various applications. The design‐centre provides solutions for VLSI from technological request to fully verified and characterized microchips. The following subdivisions exist in the Centre: • Marketing service and project management; • Analogue and mixed ICs design laboratory; • Layout development and verification laboratory; • Quality management service. Analogue and digital functional packages development is made on the basis of modern technical processes according to standard design cycle: ‐ CMOS technology: 0.13, 0.18, 0.25, 0,35, 0.5, 0.8 micron; ‐ Bipolar 25 V, 45 V; ‐ BCD 25 V. Universal sheet‐oriented and layout tasks solutions in accordance with modern development trends of submicron CMOS technology are offered. A fully qualified team provides design realization and project implementation to a set date and at an advanced technology level. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

Process Modelling

Analogue IC,

Mixed IC;

SoC

RF IC

Technology

CMOS/ BiCMOS,

Bipolar


50

Applications





Telecommunications



A/D and D/A converters;

Frequency synthesizers.

Contact details: Address: 394063, Voronezh, Leninskiy prospect, 160a Web: Executive director: Vyacheslav Tupikin Contact person:

Olga Zinchenko, Head of the Centre Tel: +7 910 3451539 E‐mail: [email protected]


51

VLADIMIR STATE UNIVERSITY

Training and Competence Centre at VSU Acronym: VSU

Type: R&D organisation/University Size: > 80 employees Brief description of organisation:

Vladimir State University is a public institution of higher‐vocational education. The University is situated in Vladimir, a town 180 km east from Moscow. Staff consists of more than 900 highly‐qualified employees, including 100 PhD and more than 500 candidates of science. Over 20,000 students are taught at the university. There are 49 Science Education Centres operating at the university. One of them is the Microelectronics Training and Competence Centre (MTCC), created in 1997 by the Computer Engineering department in the frame of European Project SYTIC СР 96 0170. There are about 20 high‐qualified employees in MTCC including 2 Professors, 6 Ph.D. and 5 Ph.D. students. The average age of the staff is less than 38 years.

Main activities of the Centre are focused on microelectronic and deep‐submicron IC design, SoC and IP

design. There is successful experience in design and realization of IC with design rules of CMOS 0,35 μm, 0,18 μm and 0,13 μm. The MTCC realizes front‐end design of electronics systems including RF, telecommunication and DSP. The following CAD tools are used in research and development: ADS of Agilent Technologies, Mentor Graphics, CADENCE, Xilinx, etc. The Centre has extensive experience in participating in international projects, for instance, EUROPRACTICE, Copernicus, FP5, and TEMPUS, national projects of Ministry of Education and Science of Russian Federation and also R&D contracts with industrial enterprises.


52



IC‐Design,

System design

Analogue IC,

Digital IC,

Mixed IC;

SoC

FPGA

Si

Technology

CMOS/ BiCMOS,

Applications

Telecommunications




Low power IC design: analogue, digital and mixed‐signal

Low power transmitting systems, analogue and RF devices

Telecommunication systems: 3G – 4G

Front‐end design of electronics systems

New design methodologies of microelectronic devices and systems

Design‐for‐testability approaches and tools

Digital signal processing

Sensor networks

Contact details: Address: Gorky Str., 87, Vladimir, 600000, Russia, Computer Engineering Department, Microelectronics Training and Competence Centre Web: http://cmpo.vlsu.ru Head of organisation (director): Valentin Morozov Contact person:

Vladimir Lantsov, Pro‐rector for Research Tel: +7 (4922) 533342 E‐mail: [email protected]; [email protected]


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MOSCOW STATE INSTITUTE OF ELECTRONICS AND MATHEMATICS Department of Electronics and Electrical Engineering Acronym: MIEM

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The main scope of the department is computer simulation and modelling of ICs. It was established during the 1990s. The department has good contacts with Motorola, Mentor Graphics, Synopsis, and Oracle. The department has licenses to use the software of these companies. A laboratory based on XILINX FPGA products has been created in 2005. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


Process Modelling

Analogue IC,

Digital IC,

Mixed IC;

Si

Other

Technology

SOI

Applications





Computer simulations and modelling of the semiconductor devices

Contact details: Address: 109028 Moscow, Trehsvetitelskiy St., 3/12 Web: http://avt.miem.edu.ru Head of organisation (director): Vladimir Kulagin Contact person:

Prof. K.O.Petrosyants, Head of Electronics and Electrical Engineering Department Tel: +7 495 2355042 Fax: +7 495 9162807 E‐mail: [email protected]


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ELECTRONIC VLSI ENGINEERING AND EMBEDDED SYSTEMS RESEARCH AND DEVELOPMENT CENTER OF MICROELECTRONICS

Acronym: ELVEES R&D Center

Type: R&D Company Size: > 80 employees Brief description of organisation: “ELVEES” R&D Center of Microelectronics (www. multicore.ru; www.elvees.ru) was founded in 1990. Main directions of the company activities are systems on chip design and security technology solutions. “ELVEES" RnD Center is a leading Russian ASIC design house, number one in the Multicore digital signal processors and «systems on a chip (SOC)» with SpaceWire links: routers, adapters, controllers – the largest chipset in Russia for the space and telecommunications, navigation and embedded systems. ELVEES has its own innovative MULTICORE IC design platform which includes a great 0.25 ‐ 0.65u silicon proven IP ‐ cores library (RISC, DSP and peripherals), based on the commercial 0.25‐u CMOS RadHard/temperature stability libraries suitable for space. “MULTICORE” platform developed by “ELVEES” R&D Center of Microelectronics includes all necessary hardware and software tools for SoC design and for developing different signal processing applications on that base: library of IP‐cores (RISC, DSP, analoge/RF and peripherals), family of “MULTICORE” chips (MC‐xx family), evaluation boards, developer tools (“MCStudio”), and application libraries.

ELVEES provides for its chips the Tools and Application Software for image compression, adaptive signal processing, optical and radar monitoring, artificial vision, telecommunications and navigation applications. ELVEES specialists worked out absolutely new security technologies, unique algorithms of artificial vision, biometric and radiometric identification.


55

R&D activities and competences in semiconductor design

Circuits and Systems Design/Testing


System design

VLSI Design

Process simulation

Nanotechnology

devices

Analog IC

Digital ICI

Mixed signal IC

SoC

Microwave IC

Si

Technology

CMOS/ BiCMOS, 65‐250nm

Applications

ASIC (SoC & SiP, FPGA & IP) design

Navigation and telecommunications

Rad Hard IC design for Space



ASIC, SoC, FPGA & IP Design

Mixed signal IC design

Rad Hard IC design for Space

Navigation and telecommunications

Digital signal processing design

Video signal processing design

Adaptive signal processing design

Design of intelligent products for high risk security applications

Contact details: Address: «ELVEES» R&D CENTER, 124460, Yuzhnaya promzona, proezd 4922, stroenie 2 , Moscow, Zelenograd, Russia. Web: www. multicore.ru; www.elvees.ru Head of organisation (director): Dr. Jaroslav J. Petrichkovich Contact person:

Dr. Tatiana V. Solokhina Tel: +7‐495‐913‐3188, 8‐903‐139‐2391 Fax: +7‐495‐913‐3188 E‐mail: [email protected]


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IOFFE PHYSICAL TECHNICAL INSTITUTE OF RUSSIAN ACADEMY OF SCIENCE Acronym: PhTI

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The Institute is a world known leader in semiconductor physics, devices, and technologies. The structure of the Institute includes the following units: Centre of Nanoheterostructure Physics, Division of Solid State Electronics, Division of Solid State Physics, Division of Plasma Physics, Atomic Physics and Astrophysics, and Division of Physics of Dielectric and Semiconductors. R&D activities and competences in semiconductor design Circuits and Systems Design/Testing


Process Modelling

Nanotechnology devices

Si

Si / Ge

GaAs

Applications




Photonics

Telecommunications

R&D competences and/or projects proposals for international cooperation: The Institute competences and project proposals correspond to main areas of its structural units. Contact details: Address: 194021 St. Petersburg, Polytechnicheskaya St., 26 Web: http://www.ioffe.ru Head of organisation (director): Prof. Andrei G. Zabrodskii Contact person:

Dr. Grigorii S. Sokolovskii, Senior Research Fellow Tel: +7 (812) 2927914 Fax: +7 (812) 2973620 E‐mail: [email protected]


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SAINT PETERSBURG STATE ELECTROTECHNICAL UNIVERSITY "LETI" Acronym: SPbETU

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: SPbETU is one of the largest education and research centres in electrical engineering, electronics and computer science in Russia. The university’s faculties are involved in the following semiconductor areas: Electrical Engineering and Telecommunications, Electronics, Computer Science and Informatics, and Control and Automation. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

Nanotechnology

devices

FPGA

RF IC

Si

Technology

Bipolar


Applications





Telecommunications


Digital signal processing

RF circuit design


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Contact details: Address: RUSSIA 197376, St.Petersburg, Professor Popov str., 5 Web: http://www.eltech.ru Head of organisation (rector): Prof. Vladimir M. Kutuzov Contact person:

Dr. Alexey S. Ivanov, Director of International Projects Office Tel: +7 (812) 234 00 72 Fax: +7 (812) 234 05 80 E‐mail: [email protected]


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TAGANROG INSTITUTE OF TECHNOLOGY (SOUTHERN FEDERAL UNIVERSITY), CENTRE “NANOTECHNOLOGIES” Acronym: TIT

Type: R&D organisation/University Size: > 80 employees Brief description of organisation: The Centre consists of the following labs: micro‐ and nanosystems (MEMS), material science and technology, and optoelectronics. The centre’s equipment is located in a clean room over 400 sq. meters in size. Measurements are done using a number of microscopes: Nova NanoLab 600 including Ntegra Vita, Solver P47, and "NanoEducator".



System design IC‐Design Process Modeling Nanotechnology devices

Analogue IC FPGA

Si

Technology Bipolar

Applications Novel process/metrology equipment and materials Energy efficient electronic systems, thermal effect aware design Transport, safety and security


MEMS design Contact details: Address: 347928, Russia, Rostov Region, Taganrog, Nekrasovskiy St., 44 Web: http://fep‐tti‐sfedu.ru Head of organisation (rector): Prof. Alexander I. Sukhinov

Contact person:

Prof. Boris G. Konoplev, Director of the Centre Tel: +7 (8634) 31‐15‐84 Fax: +7 (8634) 36‐15‐00 E‐mail: [email protected]


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"LABORATORY OF INNOVATION TECHNOLOGY" LTD Acronym: LIT

Type: Company Size: <10 employees Brief description of organisation: The priority directions of the organisation are:

Development of microsystem elements constructions and microsystem technology equipment.

Technology of silicon‐on‐insulator structure creation for micro electromechanical systems (MEMS)

elements.

Development and production of micro accelerometers, spin‐rate meters, (micro gyroscopes) inclination

compass, inertial measuring cells, pressure sensors, systems on the MEMS.

The organisation conducts research in the following perspective directions:

assembling of micro equipment elements, including flexible medium.

development of new application of pressure sensors and creation systems on their base.



System design,

Process Modelling

Nanotechnology

devices

Mixed IC;

SoC

Si

Si / Ge

Technology

Bipolar


SOI


61

Applications








Telecommunications



Contact details: Address: Moscow, Zelenograd, road 4806, bld. 5 Web: Head of organisation (director): Sergey Timoshenkov Contact person:

Sergey Timoshenkov, Director Tel: +7 499‐720‐87‐68 E‐mail: [email protected]; [email protected]


62

ELNAS Acronym: ELNAS

Type: Company Size: > 80 employees Brief description of organisation: The technology centre ELNAS is involved in the three‐dimensional (3D) assembly of integrated circuits based on electrochemical nanomaterials. 3D packaging is performed by stacking chips and using wirebonding or through silicon vias (TSV) to assemble telecommunication systems (especially, SiP with DVB IC), satellite navigation SiP (more particular, GPS/Glonass/Galileo), FPGA (for example, high logic capacity with >500k logic gates), MEMS (such as smart RFID), et al. Electrochemical nanomaterials are used to perform 3D assembly by using through silicon vias filled with Cu and interconnected by Sn microbumps as well as for damascene copper metallization of integrated circuits and Ni/Cu metallization of solar cells. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

FPGA

RF IC

Si

Technology

CMOS/ BiCMOS and RF CMOS

Applications

Telecommunications (DVB H/T)

Satellite navigation (Glonass/GPS)

Logic and Memory SiP (FPGA/Flash)

MEMS (Smart RFID)

Novel electrochemical nanomaterials (for IC, 3D TSV and Solar Cells)


- Formulation of specialty electrochemical nanomaterials, their characterization, qualification and

production for metallization of IC, 3D TSV and Solar Cells

- FPGA and RF CMOS SiP design, fabrication, assembly and testing


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Contact details:

Address: Russia, 394033 Voronezh, Leninsky Prospect 19а Web: http://www.nano3dsystems.com Head of organisation (director): Valery Dubin Contact person:

Valery Dubin, Director Tel: +1 503 927 4766 Fax: +1 503 439 1074 E‐mail: [email protected]


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NEVATRON, LTD. Acronym: Nevatron, Ltd.

Type: Private Company Size: 7 employees Brief description of organization: Nevatron Ltd is a small ASIC design center. Mainly we are working with foreign customers (from Israel, Germany, Switzerland). Four engineers have worked at western design centers in Russia, three engineers have worked abroad (USA, Sweden, Scotland, South Korea, India). Our engineers have several US/Europe patents issued. More than thirty ICs designed by Nevatron Ltd are in mass production. Several libraries developed by our team are in use at a well‐known foundry now. Also we have experience with PDK and IP blocks development. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design

Analogue IC

Digital IC

Mixed IC

SoC

RF IC

Si

Technology

CMOS / BiCMOS

Applications



Telecommunications


R&D competences and/or projects proposals for international cooperation: We can provide quick “specification to GDS” service for analogue, mixed signal or digital ICs as well as advanced design techniques for challenging projects. For example high speed circuitry design with standard CMOS technologies (up to 5GHz at 0.18um).


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Contact details: Address: 7 “O” (office 325), Tallinskaya street, Saint Petersburg, Russia, 195196. Web: www.nevatron.com CEO: Oleg Postnov Contact person:

Vasily Atyunin, CTO Tel: +7(911)7770971 Fax: +7(812)6004496 E‐mail: [email protected]


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DESIGN CENTER KM211

Acronym: KM211

Type: Private company Size: 30 ‐ 80 employees Brief description of organization: Design Center KM211, as a part of international group of companies KM Core, is one of the leading IC design teams in Russia. Not only we develop our own IP, but we put a lot of effort to provide IC design services to client‐companies around the world. Area of our expertise lays in development of proprietary microprocessor IP cores and architectures, RFID, mixed signal design, systems on chip and embedded software, SDKs for our processor cores, on‐chip data protection. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

IC‐Design

Digital IC

Mixed IC

SoC

FPGA

RF IC

Si

Technology

CMOS / BiCMOS

Bipolar

Applications


Photonics





Telecommunications



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R&D competences and/or projects proposals for international cooperation: KM211 is looking for customers for it’s microprocessor IP‐cores and is willing to provide design services in digital, analog and backend designs, based on our extended experience in mass production ICs development. We can provide exclusive solutions on the system level, power consumption optimization, efficient crypto‐algorithms solutions and floating point calculations. We have accumulated a lot of experience in protection of on‐chip data integrity and development of highly protected smart cards with RF and contact interfaces. Contact details: Address: building 5/23 proezd 4806, Zelenograd, Moscow 124498. Web: www.km211.biz (www.km211.ru) CEO: M.Sh. Rakhmatullin Contact person:

Dmitry Pustov, Head of Sales & Marketing Tel: +7(499)940‐0356 (57) Fax: +7(499)940‐0356 (57) E‐mail: [email protected]


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HOLDING JOINT STOCK COMPANY "NEVZ‐SOYUZ” Acronym: HC JSC "NEVZ-Soyuz”

Type: Company Size: 30‐80 employees (engaged in semiconductor production) Brief description of organization: Multiproduct Holding «No‐vosi‐birsk Electrovacuum Plant‐Soyuz» JSC (HC NEVZ‐Soyuz JSC) is a company with a developed energe‐tic, production‐technology, logistic and social infrastruc‐ture. The enterprise is established in August 1941. The com‐pany has high professional level of the personnel and long‐term experience in the field of power semiconduc‐tor devices, vacuum elec‐tronic devices, technical ceramics. The company works according to ISO 9001:2000 and has the certificate of quality management system (TUV Cert).

The main activities of the JSC NEVZ‐Soyuz are the development, production and sale of the following products:

- Technical ceramics of any geometrical shape, used for the energy

industry, electronics, power engineering (ceramic carriers, insulators for

vacuum interrupters) and defense industry (armor ceramics);

- Vacuum switchgears;

- Microwave electronics for radio and telecommunication systems

(Zener breakdown diodes, stabilitrones, transistors);

- Semiconductor electronic components and power devices;

- ceramic packages for semiconductor power devices (diodes,

thyristors, resistors);

- new field of activity – development productions of bioadaptive

ceramics.

Total territory area ‐ 28,76 hectares. The plant has advanced infrastructure, road interchanges, own railways.


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SoC Si

Technology

Bipolar

Applications



R&D competences and/or projects proposals for international cooperation: HC JSC NEVZ‐Soyuz is looking for foreign partner/customer to provide high‐quality and cost effective design services in the field of semiconductor power devices. HC JSC NEVZ‐Soyuz is looking for foreign partner for joint development in the field of multi‐purpose high‐performance semiconductor power devices. Contact details: Address: 220, Krasny prospect, Novosibirsk, 630049, Russia. Web: www.nevz.ru Head of organization (CEO): Viktor Medvedko Contact person:

Roman Kulandin, Deputy Head of Marketing and Development department Contact person for English speaking: Anastasia Medvedko, Head of Marketing and Development department Tel: +7(383) 2‐106‐284 Fax: +7(383) 2‐106‐284 E‐mail: [email protected]


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OPEN JOINT‐STOCK COMPANY "ENGINEERING CENTRE FOR MICROELECTRONICS" Acronym: Open Society "the Engineering centre on microelectronics"

Type: Company Size: 25 employees Brief description of organization: Open Joint‐Stock Company «Engine‐ering Center for microelectronics» was founded as Engineering centre in June, 1994. In the beginning of 1994 the main set of equipment was put into operation and at the middle of 1994 the first chips were manufactured. The chip is made on basis full OLED and is intended for unified intellectual information system for hotels and planes. The Engineering centre for microelectronics is situated in Russian "Silicon Valley" ‐ in Zelenograd, a town 40 km from Moscow. There are 14 high‐qualified employees in Open Society "Engineering centre for microelectronics", including 2 Doctors of Sciences. The middle age of the staff is less than 20 years. Scientific and research activities in Microelectronics, Microsystem Technologies, Microelectronic equipment. The basic directions of research and developments are:

Research of possibility of using the polymeric materials for creation integrated circuits based on

semiconductor polymers

Development of unified intellectual information system for hotels and planes

Integrated light sources based on superbright white and color diodes controlled on minicomputer

touch screen via CAN industrial bus

Development and production of sapphire monocrystals and plates with weight exceeding 20 kg and

diameter exceeding 200 mm, with high stoichiometry degree

training of personnel of higher qualification in the field of microelectonics, dissemination in Russia

methodology of design of the radio electronic equipment on the basis of special element base with

the purpose to create consumer market of native microelectronic goods.


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Manufacturing activities:

Polymeric materials for creation integrated circuits based on semiconductor polymers

Unified intellectual information system for hotels and planes

Integrated light sources based on superbright white and color diodes controlled on minicomputer

touch screen via CAN industrial bus

Sapphire monocrystals and plates with weight exceeding 20 kg and diameter exceeding 200 mm, with

high stoichiometry degree

R&D activities and competences in semiconductor design Circuits and Systems Design/Testing


IC‐Design,

Process Modelling

Analog IC,

Mixed IC;

Si

Other (Sapphire,

Polymeric)

Technology

CMOS/ BiCMOS,

SOI

Other (Sapphire)

Applications




Contact details: Address: Zelenograd, Moscow 124460, Russia, road 4806, bld.4/1 Head of organization (director): Severcev Vladimir Nikolaevich Contact person:

Dmitriev Konstantin Nikolaevich, Deputy Director General Tel: +7 916 617 1455 Fax: +7 499 31 9656 E‐mail: [email protected]


72

INSTITUTE FOR PHYSICS OF MICROSTRUCTURES, RUSSIAN ACADEMY OF SCIENCES Acronym: IPM RAS

Type: R&D organization / University Size: 250‐500 employees Brief description of organization: The fundamental and applied scientific researches in area of physics of a surface, solid‐state nanostructures, high‐temperature superconductors and multilayered x‐ray optics, and also technology and application of thin films, superficial and multilayered structures, high‐temperature superconductors, dielectrics and semiconductors are carried out at IPM PAS. The researches in the field of development of silicon near infrared optoelectronics and development terahertz range with use semiconductor nanostructures are conducted. Molecular beam epitaxy methods light for emitted structures on the basis of SiGe/Si and Si: Er/Si are developed. The mechanisms of radiation and light absorption by these structures in a near IR‐range, physical principles of photodetectors, light‐emitting diodes and lasers on their basis are investigated. Works on detection and studying of stimulated radiation of a millimetric and submillimetric range in hole germanium are conducted. The new physical phenomena in semiconductor heterostructures on the basis of A3B5 including semiconductor nitrides are studied, for the further application in micro‐and optoelectronics. The epitaxy by method MOCVD of semi‐conductor heterostructures on the basis of In, Ga, Al, As, N is developed. The detailed complex research of epitaxial structures properties and manufacturing of test instrument structures is carried out. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


Nanotechnology

devices

Si

Si / Ge

GaAs

GaN

Other

Technology

Other

Applications

Telecommunications


Photonics


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R&D competences and/or projects proposals for international cooperation: The scientific interests of IPM RAS:

transport and optical properties of semiconductor nanoheterostructures including superlattices and

systems with quantum wells and quantum dots;

molecular beam epitaxy method for light emitted structures on the basis of SiGe/Si and Si: Er/Si;

mechanisms of radiation and light absorption of SiGe/Si and Si: Er/Si structures at a near IR‐range and also

physical principles of photodetectors, light‐emitting diodes and lasers on their basis;

epitaxy of GaAs, InGaAs, AlGaAs, GaN, AlN, InN heterostructures by metal organic chemical vapor

deposition (MOCVD) method;

research of epitaxial structures properties and manufacturing of test instrument structures for the

further application in the field of micro‐ and optoelectronics.

Contact details: Address: Ulyanov st., 46, Nizhny Novgorod, 603950, Russia Web: http://www.ipmras.ru Head of organization (director): Zakharij Krasilnik, Professor Contact person:

Yury Buzynin, Ph.D Tel: +7(831)430‐89‐94 Fax: +7(831)439‐39‐25 E‐mail: [email protected]


74

TOMSK STATE UNIVERSITY OF CONTROL SYSTEMS AND RADIOELECTRONICS (TUSUR) / RESEARCH‐EDUCATIONAL CENTER "NANOTECHNOLOGIES" Acronym: TUSUR / REC “Nanotechnologies”

Type: R&D organization/University Size: > 500 employees Brief description of organization: Research‐Educational Center (REC) "Nano‐technologies" of TUSUR (Tomsk, Russia) includes three departments: microwave monolithic integrated circuit (MMIC) design center, pilot semiconductor processing line with 20 nm nanolithograph, test and measurement laboratory. R&D expertise: design, simulation and development of GaAs and GaN HEMT MMICs including low noise amplifiers, high‐efficient power amplifiers and mixers from 1 to 80 GHz; microwave on‐wafer semiconductor device measurements up to 50 GHz including S‐parameters, noise parameters, source and load pull measurements, etc.; characterization and linear/noise/nonlinear model extraction of microwave transistors and passive MMIC elements; building of element model libraries for European and Russian MMIC fabrication processes; development of software for on‐wafer measurement control/automation; development of original software tools for MMIC design automation, i.e., for the synthesis (generation) of MMIC schematic and layout directly from requirements based on artificial intelligence approaches.

Our European partners: XLIM Research Institute of Limoges University (Limoges, France); French Space Agency (CNES, Toulouse, France), Netherlands Astronomic Center (ASTRON, Dwingeloo, Netherlands); VTD Co. (Limoges, France); University Tor Vergata (Rome, Italy); University l'Aquilla (l'Aquilla, Italy). International projects with European partners: "Software tools for automatized synthesis of MMICs" ‐ 3 INTAS and INTAS‐CNES projects in the frame of FP6 (XLIM, CNES, ASTRON); "MMICs for square‐kilometer radio telescope SKADS (ASTRON); "MMICs for space

communication system" (CNES); "The universal open and expandable software for test bench control with application to microwave device characterization, time‐domain load‐pull measurements and circuit design" (VTD Co.); "Design and development of high‐efficiency GaN power amplifiers" (University Tor Vergata, University l'Aquilla).


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IC‐Design

RF IC

Si / Ge

GaAs

GaN

Technology

Bipolar

Other

Applications

Telecommunications


R&D competences and/or projects proposals for international cooperation: 1) Design and development of extreme‐performance MMICs (low noise amplifiers, high‐efficient power amplifiers, etc.) based on GaAs, GaN and other processes for telecommunications, radioastronomy, automotive radars, etc.; 2) microwave on‐wafer device measurements; 3) characterization and linear/noise/nonlinear model extraction of microwave transistors and passive MMIC elements; 4) building of element model libraries for different MMIC fabrication processes; 5) development of software for measurement control/automation; 6) development of software tools for MMIC design (synthesis) automation. REC is looking for cooperation with companies and organizations interested in research and development of modern MMIC’s and microwave systems based on semiconductor electronics. Contact details: Address: 40, Lenina St. Tomsk, Russia 634050. Web: http://www.tusur.ru/en Head of organization (director): Yury Shurygin, Rector Contact person:

Leonid Babak, Vice‐Director of REC "Nanotechnologies" Tel: +7(960)969‐91‐52 Fax: +7 (3822) 51‐32‐62 E‐mail: [email protected]


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“FID ‐ TECHNIQUE” GROUP Acronym: FID-Tech

Type: Private company Size: 10‐49 employees Brief description of organization: "FID‐Technique" Group ‐ a group of companies that provides research, development and production of pulse power semiconductors (semiconductor devices with nanosecond and picosecond switching speed) and pulse power electronic equipment on their base . R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

Process Modeling

Si

GaAs

GaN

Technology

Bipolar

SOI

Applications

Telecommunications


Photonics






77

R&D competences and/or projects proposals for international cooperation: Study of carrier transport, generation and recombination processes in semiconductors (Si, GaAs, SiC) in high electric fields, non‐equilibrium conditions and with high density electron‐hole plasma in bipolar device high voltage structures. Development of different techniques for device structures fabrication (diffusion, epitaxy, HE implantation, direct bonding, light ion beam modification of semiconductors etc.) and a different methods of the structures characterization (DLTS, C‐V, I‐V, LSM, AFM, SAM, OBIC, LDMTV etc.) Study and development of electrical circuit and regimes of operation for power semiconductor switching devices with sub‐nanosecond switching speed and high repetition rates in real electronic equipment. Contact details: Address: Gzhatskaya st., 27, Saint Petersburg, 195220, Russia. Web: http://www.fidtech.com Head of organization (director): Sergey Belikov. Contact person:

Vladimir Kozlov, Head of R&D Department Tel: +7(812)590‐71‐57 Fax: +7 (812)590‐71‐61 E‐mail: [email protected]


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Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch) of RAS, Photonics Laboratory Acronym: SBIRE RAS

Type: R&D organisation/University Size: <10 employees Brief description of organization: Photonics laboratory have been involved in Metamaterial Laboratory of Saratov State University. Research activities of laboratory belong to plasmonic applications for terahertz frequencies. The current project is supposed to produce basic physical and technological principles for the development of compact, electrically tuneable, and suitable for mass production detectors and generators operating in terahertz frequencies. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System design

Nanotechnology

devices

Applications


Photonics

R&D competences and/or projects proposals for international cooperation: Recent projects:

1) RFBR project No 11‐02‐92101 “Electromagnetic coupling between plasmons and terahertz radiation in

semiconductor nanostructures” in cooperation with Professor Otsuji Taiichi, Ultra‐Broadband Signal

Processing Laboratory, Research Institute of Electrical Communication, Tohoku University,Sendai, Japan.

2) RFBR project No 10‐02‐93120 “Plasmonic phenomena and detection of terahertz radiation in periodic

transistor structures with an asymmetric unit cell” in cooperation with Director of Research Coquillat

Dominique, Semiconductor Research Group Laboratory UMR 5650, CNRS ‐ University of Montpellier 2,

Montpellier, France.

3) GDR‐I project “Semiconductor sources and detectors for terahertz frequencies”.


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Contact details: Address: 38, Zelenaya street, Saratov, 410019, Russia. Web: http://www.cplire.ru/rus/sfire/ (only in Russian) Head of organization (director): Vyacheslav Popov (Head of laboratory). Contact person:

Denis Fateev, Senior staff scientist Tel: +7 (8452) 511179 Fax: +7 (8452) 511179 E‐mail: [email protected]


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South Russia State University of Economics and Service Acronym: SRSUES

Type: R&D organisation/University Size: >80 employees Brief description of organization: There are more than 25 000 students in the University. The Mechanics and Radio engineering Faculty of the SRSUES realizes a professional training in directions of Telecommunication, Radio engineering, Household electronics, Informational systems and technologies, Applied informatics. Annually within the limits of the profile the University carries out 2‐3 projects within the limits of various departmental programs and under orders of the enterprises, submits to 50 demands for patents, publishes 5‐6 monographs, protects 3‐5 master's theses, spend 2‐3 All‐Russia conferences with the international participation. Every year students and post‐graduate students of the Radio engineering Direction win 2‐3 Contests of Grants of the President of the Russian Federation for training abroad (IHP (Germany), Tampere University of Technology (Finland),etc.). There is the Department of Microcircuitry of Russian‐Belorussian center of science "MikAn", the laboratory of perspective technologies and processes of the CRPS of RAS and the SRSUES. There are also two scientifically‐educational centers created with the participation of employers in the University. The SRSUES has several strategic partners in the field of the engineering of analog microcircuits: FSUE NPP “Pulsar”, FSU SRI of ME “Progress”, the Minsk research instrument‐making institute, and also other enterprises entering into the Russian union of developers and manufacturers of Microsystems. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


IC‐Design,

Analogue IC,

Mixed IC,

SoC,

RF IC

Technology

CMOS/ BiCMOS,

Bipolar

Applications


Telecommunications


81

R&D competences and/or projects proposals for international cooperation: Recent projects:

1. “The theoretical basis of designing non‐linear and controlled IP‐blocks for microwave communication

systems and next generation telecommunications” (2009‐2011). Partners – Ministry of Education and

Science of the Russian Federation , FSUE NPP "Pulsar", The Russian Union of developers and chip

manufacturers.

2. “Theoretical problems of radiation resistance of analog integrated microcircuits” (2009‐2011). Partners –

Ministry of Education and Science of the Russian Federation, Scientific production association “Measuring

Technics" Ltd. (Korolev), The Russian Union of developers and chip manufacturers.

3. “Theoretical foundations of self‐and mutual impedances of compensation and their practical applications

in precision chips for systems management, technical diagnosis and next‐generation telecommunications”

(2009‐2011). Partners – Ministry of Education and Science of the Russian Federation, Federal State

Institution Scientific Research Institute of Microelectronic Equipment “Progress”, The Russian Union of

developers and chip manufacturers.

4. «Development of complex RF blocks based on SiGe technology for advanced wireless communication

systems” (2007). Partner – Intel, US.

Contact details: Address: 147 building, Shevchenko street, Shakhty, Rostov region, 346500, Russia Web: www.sssu.ru (www.sssu.ru/Default.aspx?tabid=235 – English page) Head of organization (director): Nikolay Prokopenko. Contact person:

Nikolay Prokopenko, Rector Tel: +7 (8636) 22‐20‐37 Fax: +7 (8636) 23‐78‐31 E‐mail: [email protected]


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Joint stock company "Zelenograd nanotechnology center" Acronym: JSC "ZNTC"

Type: Company Size: 30‐80 employees Brief description of organization:

JSC ZNTC is an initiative of JSC Zelenograd innovation and technology centre and Rosnanotech. Mission of JSC ZNTC: Technology transfer promotion through business incubation of start‐up companies and licensing technological processes for the following business areas:

Physical, biological and chemical parameters based on nano and microelectromechanical systems.

Medical equipment based on nanoscale sensors.

Design of VLSI using system‐on‐chip technology.

Intelligent navigation and control system based on nano and microelectromechanical systems for

transport, aviation and space industry.

Intelligent electronic energy‐saving / energy‐efficiency systems, devices and equipment based on nano

and microelectromechanical systems.


83



IC‐Design,

Process Modelling,

Nanotechnology

devices.

Digital IC,

Mixed IC,

SoC,

FPGA

Si

Technology

CMOS/ BiCMOS,

SOI

Applications








R&D competences and/or projects proposals for international cooperation: ZNTC is looking for partners in the field of nanoelectronic sensors creation, based on the following key technological platforms:

VLSI and SoC design and pilot manufacturing.

Giant magnetoresistance effect NEMS sensors. Main applications: Nonvolatile memory (NVRAM),

terahertz range micro‐generators, magnetic field and biosensors.

Piezoresistive effect NEMS sensors. Main applications: Sensitive elements for pressure and vibration

sensors.

Thermoresistive effect NEMS sensors. Main applications: Sensitive elements for gas and liquids flow rate

detectors and mixture analyzers.

CMOS microchips with integrated Intelligent sensors. Main applications: signal digitizing and

preprocessing.

NEMS and MEMS gyroscopes. Main applications: accelerometers and navigation systems.

Micro mirror matrixes.

Multifunctional nano‐probe console systems.

Recent projects: 1. Development of technological solutions for making of physical quantity sensors with the ability to record

data to smart card or to transmit to mobile payments systems via NFC or ISO 14443.

2. Micro consuming VLSI development.

3. Broadband analog receiver development.

4. Development of software for constructive and topological analyses of modern VLSI.

Contact details: Address: 5/20, Road 4806, Zelenograd, Moscow, 124498, Russia


84

Web: www.zntc.ru Head of organization (director): Anatoly Kovalev. Contact person:

Alexey Leontiev, Head of International relations department Tel: +7(499) 720 69 44 Fax: +7(499) 720 69 44 E‐mail: [email protected]


85

Limited liability Company “Nanoelectronic systems” Acronym: NES LLC

Type: Company Size: <10 employees Brief description of organization:

NES LLC is engineering company, which develops and commercializes nanoelectronic vibro and acoustic diagnostic systems and recharging systems of low‐powered electronic devices. Pilot project of NES LLC – nonvolatile control system of railroad rail state.

• Nonvolatile sensors “listen” wobbling sound of coming train and warn against rails damage. • Sensor recharge comes from passing train, which bears against rails and with built‐in piezoelectric

generators Nonvolatile control system of railroad rail state is based on piezoelectric generator, which was patented in Moscow Institute of Electronic Technology. NES LLC engages in commercialization of the development under the license contract. Project team consists of highly skilled engineering and administrative experts, with wide experience in project commercialization and research. R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


Nanotechnology

devices.

Digital IC,

Mixed IC,

SoC,

FPGA

Si

Other


86

Technology

CMOS/ BiCMOS,

Flexible&Hybrid boards

Other

Applications


Photonics





Telecommunications


R&D competences and/or projects proposals for international cooperation: Company is seeking for partner to research physical properties and to improve pilot model of piezoelectric generator. In particular, a joint project may involve the following tasks:

Research the processes of oxide crystalline nanostructures creation to form nanostructured piezoelectric

sensors for harvester energy converter.

Determination of external factors effecting on output characteristics of mechanical energy harvester

converter and optimization of the characteristics..

Support of consistency of operation of nanostructured piezoelectric harvester converter of mechanical

energy via encapsulation and sealing.

Recent projects: 1) Development of piezoelectric generator based on filiform nanostructures

2) Research of kinetics formation of filiform nanocrystals assembly with specified morphology and electronic

properties for solid photoelectric converters

3) Physic‐technological foundations periodic nanopatterned elements of microsystem technology based on

porous anodic oxide

4) Development of electrochemical and chemical methods of nano heterojunction formation for solar cell

Contact details: Address: 5/23, Road 4806, Zelenograd, Moscow, 124498, Russia Head of organization (director): Alexey Leontiev. Contact person:

Alexey Leontiev, Director General Tel: +7(499) 720 69 44 Fax: +7(499) 720 69 44 E‐mail: [email protected]


87

Joint Stock Company “Ecological sensors and systems” Acronym: JSC “ES&S”

Type: Company Size: 30 ‐ 80 employees Brief description of organization: JSC “ES&S” is producer and provider of new generation instrumentation for measurement of temperature, air humi‐dity, gas microhumidity, gas composition, blast velocity and heat flow density. Company was founded in 2003. The main directions of activity are development, production and delivery of sensors, transducers, devices and measu‐ring systems for monitoring and control of technological parameters and processes for different industries and agriculture. Our products: digital thermometers, gas microhumidity analyzers, relative humidity analyzers, humidity of solid and granular materials analyzers, gas analyzers and gas annunciators and blast meters. Our scientific activities are development of sensors for gases and liquids based on new nanotechnological materials, devices for ecological and technological control and devices for medical application. Company fulfills activity in accordance with quality management system ISO 9000:2000 (certificate of Russian Space Agency). R&D activities and competences in semiconductor design: Circuits and Systems Design/Testing


System Design,

Process Modelling,

Nanotechnology

devices.

Analogue IC

Digital IC,

Mixed IC,

SoC,

RF IC

Other

Technology

CMOS/ BiCMOS,

Bipolar

Other

Applications


88







Highly qualified design specialists in field of novel materials and process/metrology tools development

High‐technology designs of sensors and equipment

Fully equipped resource base for design and production of sensors and equipment

Successful experience in production of sensors and devices Recent projects:

1. The development of tools for air flow checking in blowers. (The Barmin Research Institute of Launch Complexes)

2. The development of tools for air quality checking: dustiness, temperature, humidity. (The Barmin Research Institute of Launch Complexes)

3. The development of tools for checking of vibration and temperature in bearings of blowers. (The Barmin Research Institute of Launch Complexes) JSC “ES&S” is looking for foreign partner for joint developments of:

sensors based on microelectronic technology for gas and liquid control

high‐quality and competitive checking tools for technological environments Contact details: Address: 314, b.2, Road 4922, JSC “Technopark‐Zelenograd”, Zelenograd, Moscow, 124460, Russia. Web: www.eksis.ru (only in Russian) Head of organization (director): Alexander Anisimov. Contact person:

Olga Ivanova, Semiconductor R&D/international projects Tel: +7(499) 7311000 Fax: +7(499) 7317700 E‐mail: [email protected]


89

Joint Stock Company “Practic‐NC” Acronym: JSC “Practic‐NC”

Type: Company Size: 10 ‐ 30 employees Brief description of organization:

Company was founded in 1991. General directions of our activity are development and production of sensors and portable and stationary devices based on them, multichannel systems for monitoring of technological parameters, intended for usage in an industry, ecological monitoring, agriculture, hydro‐meteorology and medicine.

More than 10000 customers in Russian Federation and CIS operate approximately 40000 of our devices in different fields of industry. Company have licence of Russian Space Agency to execute transport‐expedition service, investigations, deve‐lopment and production of automated instru‐ments for monitoring of outer and technological environments for stating complexes in behalf of Russian Federal Space Program. Quality management system satisfies the requirements of ISO 9000:2000.



System Design,

Process Modelling,

Nanotechnology

devices.

Analogue IC

Digital IC,

Mixed IC,

SoC,

RF IC

Other

Technology

CMOS/ BiCMOS,

Bipolar

Other

Applications



90






Highly qualified design specialists in field of novel materials and process/metrology tools development

High‐technology designs of sensors and equipment

Fully equipped resource base for design and production of sensors and equipment

Large and successful experience in production of sensors and devices

Recent projects: 1. Project ISTC # 1730. Creation of an instrument for monitoring the nitric oxide (NO) content in exhaled air

and its test in treatment process of asthmatic patients (in medical practice). ( Military medical academy of

FSB, Nizhny Novgorod; VNIIEF, Sarov)

2. Project ISTC # 1838. Chemical micro‐sensors with polyazaporphine sensitive layers. (Institute of Chemical

Physics of RAS, Moscow)

3. Project ISTC # 3209. Diagnostics and analyzer of respiratory organs inflammation activity at chronic

obstructive pulmonary disease, bronchial asthma and tuberculosis using determination of hydrogen

peroxide content in biosubstrates. (VNIIEF, Sarov; Institute of Tuberculosis of RAMS, Moscow; Moscow

State University)

4. Project ISTC # 3625. Putting into production the device – analyzer of NO concentration in expired air,

designed for respiratory diseases diagnosing and treatment process monitoring. (VNIIEF, Sarov; Sarov

Laboratories)

JSC “Practic‐NC” is looking for foreign partner for joint developments of:

sensors based on microelectronic technology for gas and liquid control

high‐quality and competitive checking tools for technological environments Contact details: Address: 414, b.2, Road 4922, JSC “Technopark‐Zelenograd”, Zelenograd, Moscow, 124460, Russia. Web: www.pnc.ru (only in Russian) Head of organization (director): Sergey Krutovertsev. Contact person:

Sergey Krutovertsev, Director Tel: +7(499) 7313842 Fax: +7(499) 7317676 E‐mail: [email protected]

Promotion guide of Russian Semiconductor Design OrganisationsTA

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1.1.4. Nanotechnology devices

1.2.1 Analog IC

1.2.2 Digital IC

1.2.3 Mixed IC

1.2.4 SoC

1.2.5 FPGA

1.2.6 RF IC

1.3.1 Si

1.3.2 Si/Ge

1.3.3 GaAs

1.3.4 GaN

1.3.5 Other

2.1 CMOS/ BiCMOS

2.2 Bipolar

2.3 Flexible&Hybrid boards

2.4 SOI

2.5 Other

3.1 Increasing industrial process variability 3.2 Semiconductor manufacturing approaches, processes and tools 3.3 Novel process/metrology equipment and materials 3.4 Flexible, organic and large area electronics (sensors, RFID, TFTs and others) 3.5 Photonics 4.1 Electro-magnetic interference, heat dissipation, energy consumption 4.2 Energy efficient electronic systems, thermal effect aware design 4.3 Autonomous energy efficient smart systems

5. Transport, safety and security

6. Telecommunications

7. Biomedical microsystems and smart miniaturised systems

8. Heterogeneous systems, integration of heterogeneous functions

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