2.5v to 6.0v micropower cmos op amps...

MCP606/7/8/92.5V to 6.0V Micropower CMOS Op Amp

Features• Low Input Offset Voltage: 250 µV (maximum)• Rail-to-Rail Output• Low Input Bias Current: 80 pA (maximum at

+85°C)• Low Quiescent Current: 25 µA (maximum)• Power Supply Voltage: 2.5V to 6.0V• Unity-Gain Stable• Chip Select (CS) Capability: MCP608• Industrial Temperature Range: -40°C to +85°C• No Phase Reversal• Available in Single, Dual and Quad Packages

Typical Applications• Battery Power Instruments• High-Impedance Applications• Strain Gauges• Medical Instruments• Test Equipment

Design Aids• SPICE Macro Models• FilterLab® Software• Mindi™ Circuit Designer & Simulator• Analog Demonstration and Evaluation Boards• Application Notes

Typical Application

DescriptionThe MCP606/7/8/9 family of operational amplifiers (opamps) from Microchip Technology Inc. are unity-gainstable with low offset voltage (250 µV, maximum).Performance characteristics include rail-to-rail outputswing capability and low input bias current (80 pA at+85°C, maximum). These features make this family ofop amps well suited for single-supply, precision,high-impedance, battery-powered applications.

The single is available in standard 8-lead PDIP, SOICand TSSOP packages, as well as in a SOT-23-5package. The single MCP608 with Chip Select (CS) isoffered in the standard 8-lead PDIP, SOIC and TSSOPpackages. The dual MCP607 is offered in the standard8-lead PDIP, SOIC and TSSOP packages. Finally, thequad MCP609 is offered in the standard 14-lead PDIP,SOIC and TSSOP packages. All devices are fullyspecified from -40°C to +85°C, with power suppliesfrom 2.5V to 6.0V.

Package Types

Low-Side Battery Current Sensor

RF

To Load

2.5V

RG5 kΩ 50 kΩ

To Load

VOUT

RSEN10Ω (VLM)

(VLP)

IL

to6.0V

VOUT VLM I+ LRSEN RF RG⁄( )=

MCP606

VIN+VIN–

VSS

VDDVOUT

1234

8765 NC

NCNC

PDIP, SOIC,TSSOP

PDIP, SOIC,TSSOP PDIP, SOIC,TSSOP

PDIP, SOIC,TSSOP

SOT-23-5

VIN+VSS

VIN–

123

5

4

VDDVOUT

VINA+VINA–

VSS

VOUTBVINB–

1234

8765 VINB+

VDDVOUTA

VIN+VIN–

VSS

VDDVOUT

1234

8765 NC

CSNC

VINA+VINA–

VDD

VIND–VIND+

1234

14131211 VSS

VOUTDVOUTA

VINB–VINB+

VOUTB

VINC+VINC–

567

1098 VOUTC

MCP606 MCP606

MCP607 MCP608

MCP609

© 2009 Microchip Technology Inc. DS11177F-page 1

MCP606/7/8/9
NOTES:
DS11177F-page 2 © 2009 Microchip Technology Inc.

MCP606/7/8/9

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †VDD – VSS ........................................................................7.0VCurrent at Input Pins ....................................................±2 mAAnalog Inputs (VIN+, VIN–) †† ........ VSS – 1.0V to VDD + 1.0VAll Other Inputs and Outputs ......... VSS – 0.3V to VDD + 0.3VDifference Input Voltage ...................................... |VDD – VSS|Output Short Circuit Current ................................ContinuousCurrent at Output and Supply Pins ............................±30 mAStorage Temperature .................................–65° C to +150° CMaximum Junction Temperature (TJ)........................ .+150° CESD Protection On All Pins (HBM; MM) .............. ≥ 3 kV; 200V

† Notice: Stresses above those listed under “AbsoluteMaximum Ratings” may cause permanent damage to thedevice. This is a stress rating only and functional operation ofthe device at those or any other conditions above thoseindicated in the operational listings of this specification is notimplied. Exposure to maximum rating conditions for extendedperiods may affect device reliability.†† See Section 4.1.2 “Input Voltage and Current Limits”.

DC CHARACTERISTICSElectrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL, and CS is tied low (refer to Figure 1-2 and Figure 1-3).

Parameters Sym Min Typ Max Units Conditions

Input OffsetInput Offset Voltage VOS -250 — +250 µVInput Offset Drift with Temperature ΔVOS/ΔTA — ±1.8 — µV/°C TA = -40°C to +85°CPower Supply Rejection Ratio PSRR 80 93 — dBInput Bias Current and ImpedanceInput Bias Current IB — 1 — pA

At Temperature IB — — 80 pA TA = +85°CInput Offset Bias Current IOS — 1 — pACommon Mode Input Impedance ZCM — 1013||6 — Ω||pFDifferential Input Impedance ZDIFF — 1013||6 — Ω||pFCommon ModeCommon Mode Input Range VCMR VSS – 0.3 VDD – 1.1 V CMRR ≥ 75 dBCommon Mode Rejection Ratio CMRR 75 91 — dB VDD = 5V, VCM = -0.3V to 3.9VOpen-Loop GainDC Open-Loop Gain(Large-signal)

AOL 105 121 — dB RL = 25 kΩ to VL, VOUT = 50 mV to VDD – 50 mV

DC Open-Loop Gain(Large-signal)

AOL 100 118 — dB RL = 5 kΩ to VL, VOUT = 0.1V to VDD – 0.1V

OutputMaximum Output Voltage Swing VOL, VOH VSS + 15 — VDD – 20 mV RL = 25 kΩ to VL,

0.5V input overdriveVOL, VOH VSS + 45 — VDD – 60 mV RL = 5 kΩ to VL,

0.5V input overdriveLinear Output Voltage Range VOUT VSS + 50 — VDD – 50 mV RL = 25 kΩ to VL,

AOL ≥ 105 dBVOUT VSS + 100 — VDD – 100 mV RL = 5 kΩ to VL,

AOL ≥ 100 dBOutput Short Circuit Current ISC — 7 — mA VDD = 2.5V

ISC — 17 — mA VDD = 5.5VPower SupplySupply Voltage VDD 2.5 — 6.0 VQuiescent Current per Amplifier IQ — 18.7 25 µA IO = 0Note 1: All parts with date codes November 2007 and later have been screened to ensure operation at VDD = 6.0V. However,

the other minimum and maximum specifications are measured at 2.5V and 5.5V.


MCP606/7/8/9

AC CHARACTERISTICS

MCP608 CHIP SELECT CHARACTERISTICS

FIGURE 1-1: Timing Diagram for the CS Pin on the MCP608.

Electrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).


AC ResponseGain Bandwidth Product GBWP — 155 — kHzPhase Margin PM — 62 — ° G = +1 V/VSlew Rate SR — 0.08 — V/µsNoiseInput Noise Voltage Eni — 2.8 — µVP-P f = 0.1 Hz to 10 HzInput Noise Voltage Density eni — 38 — nV/√Hz f = 1 kHzInput Noise Current Density ini — 3 — fA/√Hz f = 1 kHz

Electrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2,VOUT ≈ VDD/2, VL = VDD/2, RL = 100 kΩ to VL and CL = 60 pF, and CS is tied low (refer to Figure 1-2 and Figure 1-3).


CS Low SpecificationsCS Logic Threshold, Low VIL VSS — 0.2 VDD V

CS Input Current, Low ICSL -0.1 0.01 — µA CS = 0.2VDD

CS High Specifications

CS Logic Threshold, High VIH 0.8 VDD — VDD V

CS Input Current, High ICSH — 0.01 0.1 µA CS = VDD

CS Input High, GND Current ISS -2 -0.05 — µA CS = VDD

Amplifier Output Leakage, CS High IO(LEAK) — 10 — nA CS = VDD

CS Dynamic Specifications

CS Low to Amplifier Output Turn-on Time tON — 9 100 µs CS = 0.2VDD to VOUT = 0.9 VDD/2,G = +1 V/V, RL = 1 kΩ to VSS

CS High to Amplifier Output Hi-Z tOFF — 0.1 — µs CS = 0.8VDD to VOUT = 0.1 VDD/2,G = +1 V/V, RL = 1 kΩ to VSS

CS Hysteresis VHYST — 0.6 — V VDD = 5.0V

CS

VOUT

ISS

ICS

VIL VIH

tON tOFF

-50 nA -50 nA-18.7 µA

-50 nA -50 nA

Hi-Z Hi-Z

(typical)(typical)

(typical)

(typical) (typical)


MCP606/7/8/9

TEMPERATURE CHARACTERISTICS

1.1 Test CircuitsThe test circuits used for the DC and AC tests areshown in Figure 1-2 and Figure 1-3. The bypasscapacitors are laid out according to the rules discussedin Section 4.5 “Supply Bypass”.

FIGURE 1-2: AC and DC Test Circuit for Most Non-Inverting Gain Conditions.

FIGURE 1-3: AC and DC Test Circuit for Most Inverting Gain Conditions.

Electrical Characteristics: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.


Temperature RangesSpecified Temperature Range TA -40 — +85 °COperating Temperature Range TA -40 — +125 °C Note 1Storage Temperature Range TA -65 — +150 °CThermal Package ResistancesThermal Resistance, 5L-SOT23 θJA — 220.7 — °C/WThermal Resistance, 8L-PDIP θJA — 89.3 — °C/WThermal Resistance, 8L-SOIC θJA — 149.5 — °C/WThermal Resistance, 8L-TSSOP θJA — 139 — °C/WThermal Resistance, 14L-PDIP θJA — 70 — °C/WThermal Resistance, 14L-SOIC θJA — 95.3 — °C/WThermal Resistance, 14L-TSSOP θJA — 100 — °C/WNote 1: The MCP606/7/8/9 operate over this extended temperature range, but with reduced performance. In any case, the

Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C.

VDD

RG RF

RNVOUT

VIN

VDD/2

1 µF

CL RL

VL

0.1 µF

MCP60X

VDD

RG RF

RNVOUT

VDD/2

VIN

1 µF

CL RL

VL

0.1 µF

MCP60X


MCP606/7/8/9
NOTES:

MCP606/7/8/9

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, VDD = +2.5V to +5.5V, VSS = GND, TA = +25°C, VCM = VDD/2, VOUT ≈ VDD/2,VL = VDD/2, RL = 100 kΩ to VL, CL = 60 pF, and CS is tied low.

FIGURE 2-1: Input Offset Voltage at VDD = 5.5V.

FIGURE 2-2: Input Offset Voltage at VDD = 2.5V.

FIGURE 2-3: Quiescent Current vs. Power Supply Voltage.

FIGURE 2-4: Input Offset Voltage Drift Magnitude at VDD = 5.5V.

FIGURE 2-5: Input Offset Voltage Drift Magnitude at VDD = 2.5V.

FIGURE 2-6: Quiescent Current vs. Ambient Temperature.

Note: The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0%2%4%6%8%

10%12%14%16%

-250

-200

-150

-100 -50 0 50 100

150

200

250

Input Offset Voltage (µV)

Perc

enta

ge o

f Occ

uran

ces

( )

1200 SamplesVDD = 5.5V

0%2%4%6%8%

10%12%14%16%

-250

-200

-150

-100 -5

0 0 50 100

150

200

250

Input Offset Voltage (µV)

Perc

enta

ge o

f Occ

uran

ces

( )

1200 SamplesVDD = 2.5V

02468

10121416182022

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Power Supply Voltage (V)

Qui

esce

nt C

urre

nt

per A

mpl

ifier

(µA

)

TA = +85°CTA = +25°CTA = -40°C

0%

2%

4%

6%

8%

10%

12%

14%

16%

-8 -6 -4 -2 0 2 4 6 8Input Offset Voltage Drift (µV/°C)

Perc

enta

ge o

f Occ

uran

ces 206 Samples

VDD = 5.5V

0%2%4%6%8%

10%12%14%16%18%

-8 -6 -4 -2 0 2 4 6 8Input Offset Voltage Drift (µV/°C)

Perc

enta

ge o

f Occ

uran

ces 206 Samples

VDD = 2.5V

12

14

16

18

20

22

24

-50 -25 0 25 50 75 100Ambient Temperature (°C)

Qui

esce

nt C

urre

ntpe

r Am

plifi

er (µ

A)

VDD = 5.5V

VDD = 2.5V


MCP606/7/8/9
FIGURE 2-7: Input Offset Voltage vs. Ambient Temperature.

FIGURE 2-8: Open-Loop Gain and Phase vs. Frequency.

FIGURE 2-9: Channel-to-Channel Separation (MCP607 and MCP609 only).

FIGURE 2-10: Input Offset Voltage vs. Common Mode Input Voltage.

FIGURE 2-11: Gain Bandwidth Product, Phase Margin vs. Ambient Temperature.

FIGURE 2-12: Input Noise Voltage Density vs. Frequency.

0

100

200

300

400

500


Inpu

t Offs

et V

olta

ge (µ

V) VDD =2.5VVDD = 5.5V

Representative Part

-20

0

20

40

60

80

100

120

Frequency (Hz)

Ope

n-Lo

op G

ain

(dB

)

-225

-180

-135

-90

-45

0

45

90

Ope

n-Lo

op P

hase

(°)

Gain

Phase

RL = 25 kΩ

0.01 10.1 10 1k100 10k 1M100k

80

90

100

110

120

130

140

1.E+02 1.E+03 1.E+04 1.E+05Frequency (Hz)

Cha

nnel

to C

hann

el

Sepa

ratio

n (d

B)

Referred to Input

100 100k10k1k

-20

0

20

40

60

80

100

120

-0.5 0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Common Mode Input Voltage (V)

Inpu

t Offs

et V

olta

ge (µ

V)

TA = +85°CTA = +25°CTA = -40°C

VDD = 5.5V

020406080

100120140160


Gai

n B

andw

idth

Pro

duct

(kH

z)

01020304050607080

Phas

e M

argi

n (°

)

Phase Margin

GBWP

VDD = 5.0V

10

100

1000

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04 1.E+05Frequency (Hz)

Inpu

t Noi

se V

olta

ge D

ensi

ty(n

V/√H

z)

0.1 1 10 100 1k 10k 100k


MCP606/7/8/9
FIGURE 2-13: Input Bias Current, Input Offset Current vs. Ambient Temperature.

FIGURE 2-14: DC Open-Loop Gain vs. Load Resistance.

FIGURE 2-15: CMRR, PSRR vs. Frequency.

FIGURE 2-16: Input Bias Current, Input Offset Current vs. Common Mode Input Voltage.

FIGURE 2-17: DC Open-Loop Gain vs. Power Supply Voltage.

FIGURE 2-18: CMRR, PSRR vs. Ambient Temperature.

0.1

1

10

100

25 30 35 40 45 50 55 60 65 70 75 80 85Ambient Temperature (°C)

Inpu

t Bia

s an

d O

ffset

C

urre

nts

(pA

) IB

| IOS |

VDD = 5.5VVCM = VDD

100

105

110

115

120

125

130

135

1.E+02 1.E+03 1.E+04 1.E+05Load Resistance (Ω)

DC

Ope

n-Lo

op G

ain

(dB

)

VDD = 2.5V

VDD = 5.5V

100 100k10k1k

0

20

40

60

80

100

120

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 1.E+04Frequency (Hz)

CM

RR

and

PSR

R (d

B)

PSRR-PSRR+

CMRR

0.1 1 10 100 1k 10k

-10

0

10

20

30

40

50

60

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Common Mode Input Voltage (V)

Inpu

t Bia

s an

d O

ffset

C

urre

nts

(pA

) IB

IOS

TA = 85°CVDD = 5.5V

90

100

110

120

130

140

150

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5Power Supply Voltage (V)

DC

Ope

n-Lo

op G

ain

(dB

) RL = 25 kΩ

75

80

85

90

95

100


CM

RR

and

PSR

R (d

B)

CMRR

PSRR


MCP606/7/8/9
FIGURE 2-19: Output Voltage Headroom vs. Output Current Magnitude.

FIGURE 2-20: Maximum Output Voltage Swing vs. Frequency.

FIGURE 2-21: Slew Rate vs. Ambient Temperature.

FIGURE 2-22: Output Voltage Headroom vs. Ambient Temperature at RL = 5 kΩ.

FIGURE 2-23: The MCP606/7/8/9 Show No Phase Reversal.

FIGURE 2-24: Output Short Circuit Current Magnitude vs. Ambient Temperature.

1

10

100

1000

0.1 1 10 100Output Current (mA)

Out

put V

olta

ge H

eadr

oom

(mV)

VDD = 2.5V

VDD = 5.5VVDD - VOH

VOL - VSS

0.1

1

10

1.E+02 1.E+03 1.E+04 1.E+05Frequency (Hz)

Max

imum

Out

put V

olta

ge

Swin

g (V

) VDD = 2.5V

100 100k10k1k

VDD = 5.5V

0.00

0.02

0.04

0.06

0.08

0.10

0.12


Slew

Rat

e (V

/µs)

Low to High

High to Low

0

5

10

15

20

25

30

35

40


Out

put V

olta

ge H

eadr

oom

(mV)

RL = 5 kΩ

VDD = 5.5V

VDD = 2.5V

VDD - VOH

VOL - VSS

-1

0

1

2

3

4

5

6

Time (100 µs/div)

Inpu

t and

Out

put V

olta

ges

(V)

VOUT

VIN

G = +2 V/VVDD = 5.0V

0

5

10

15

20

25


Out

put S

hort

Circ

uit C

urre

nt

Mag

nitu

de (m

A)

+ISC , VDD = 2.5V| -ISC |, VDD = 2.5V

+ISC , VDD = 5.5V| -ISC |, VDD = 5.5V


MCP606/7/8/9
FIGURE 2-25: Large-signal, Non-inverting Pulse Response.

FIGURE 2-26: Small-signal, Non-inverting Pulse Response.

FIGURE 2-27: Chip Select (CS) Hysteresis (MCP608 only).

FIGURE 2-28: Large-signal, Inverting Pulse Response.

FIGURE 2-29: Small-signal, Inverting Pulse Response.

FIGURE 2-30: Amplifier Output Response Times vs. Chip Select (CS) Pulse (MCP608 only).

0.00.51.01.52.02.53.03.54.04.55.0

Time (50 µs/div)

Out

put V

oltg

e (V

)

VDD = 5.0V

Time (50 µs/div)

Out

put V

olta

ge (2

0 m

V/di

v)

VDD = 5.0V

-0.50.00.51.01.52.02.53.03.5

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0CS Input Voltage (V)

Inte

rnal

CS

Switc

h O

utpu

t (V)

Amplifier Output Active

Amplifier Output Hi-Z

VDD = 5.0V

Hysteresis

CS InputHigh to Low

CS InputLow to High

0.00.51.01.52.02.53.03.54.04.55.0

Time (50 µs/div)

Out

put V

olta

ge (V

)

VDD = 5.0V

Time (50 µs/div)

Out

put V

olta

ge (2

0 m

V/di

v)

RL = 25 kΩ

0.00.51.01.52.02.53.03.54.04.55.0

Time (5 µs/div)

Out

put V

olta

ge (V

)

-35-30-25-20-15-10-5051015

Chi

p Se

lect

Vol

tage

(V)

CS

VOUT

OutputHi-Z

OutputHi-Z

Output Enabled

G = +1 V/VRL = 1 kΩ to VSS


MCP606/7/8/9
FIGURE 2-31: Measured Input Current vs. Input Voltage (below VSS).

1.E-121.E-111.E-101.E-091.E-081.E-071.E-061.E-051.E-041.E-031.E-02

-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0Input Voltage (V)

Inpu

t Cur

rent

Mag

nitu

de (A

)

+125°C+85°C+25°C-40°C

10m1m

100µ10µ1µ

100n10n1n

100p10p1p


MCP606/7/8/9

3.0 PIN DESCRIPTIONSDescriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

3.1 Analog OutputsThe output pins are low-impedance voltage sources.

3.2 Analog InputsThe non-inverting and inverting inputs are high-impedance CMOS inputs with low bias currents.

3.3 Chip Select Digital InputThe Chip Select (CS) pin is a Schmitt-triggered, CMOSlogic input. It is used to place the MCP608 op amp in aLow-power mode, with the output(s) in a Hi-Z state.

3.4 Power Supply PinsThe positive power supply pin (VDD) is 2.5V to 5.5Vhigher than the negative power supply pin (VSS). Fornormal operation, the output pins are at voltagesbetween VSS and VDD; while the input pins are atvoltages between VSS – 0.3V and VDD + 0.3V.

Typically, these parts are used in a single-supply(positive) configuration. In this case, VSS is connectedto ground and VDD is connected to the supply. VDD willneed bypass capacitors .

MCP606MCP607 MCP608 MCP609 Symbol DescriptionPDIP, SOIC,

TSSOP SOT-23-5

6 1 1 6 1 VOUT, VOUTA Output (op amp A)

2 4 2 2 2 VIN–, VINA– Inverting Input (op amp A)

3 3 3 3 3 VIN+, VINA+ Non-inverting Input (op amp A)

7 5 8 7 4 VDD Positive Power Supply

— — 5 — 5 VINB+ Non-inverting Input (op amp B)

— — 6 — 6 VINB– Inverting Input (op amp B)

— — 7 — 7 VOUTB Output (op amp B)

— — — — 8 VOUTC Output (op amp B)

— — — — 9 VINC– Inverting Input (op amp C)

— — — — 10 VINC+ Non-inverting Input (op amp C)

4 2 4 4 11 VSS Negative Power Supply

— — — — 12 VIND+ Non-inverting Input (op amp D)

— — — — 13 VIND– Inverting Input (op amp D)

— — — — 14 VOUTD Output (op amp D)

— — — 8 — CS Chip Select

1, 5, 8 — — 1, 5 — NC No Internal Connection


MCP606/7/8/9
NOTES:

MCP606/7/8/9

4.0 APPLICATIONS INFORMATIONThe MCP606/7/8/9 family of op amps is manufacturedusing Microchip’s state-of-the-art CMOS processThese op amps are unity-gain stable and suitable for awide range of general purpose applications.

4.1 Rail-to-Rail Inputs

4.1.1 PHASE REVERSALThe MCP606/7/8/9 op amp is designed to preventphase reversal when the input pins exceed the supplyvoltages. Figure 2-23 shows the input voltageexceeding the supply voltage without any phasereversal.

4.1.2 INPUT VOLTAGE AND CURRENT LIMITS

The ESD protection on the inputs can be depicted asshown in Figure 4-1. This structure was chosen toprotect the input transistors, and to minimize input biascurrent (IB). The input ESD diodes clamp the inputswhen they try to go more than one diode drop belowVSS. They also clamp any voltages that go too farabove VDD; their breakdown voltage is high enough toallow normal operation, and low enough to bypassquick ESD events within the specified limits.

FIGURE 4-1: Simplified Analog Input ESD Structures.In order to prevent damage and/or improper operationof these op amps, the circuit they are in must limit thecurrents and voltages at the VIN+ and VIN– pins (seeAbsolute Maximum Ratings † at the beginning ofSection 1.0 “Electrical Characteristics”). Figure 4-2shows the recommended approach to protecting theseinputs. The internal ESD diodes prevent the input pins(VIN+ and VIN–) from going too far below ground, andthe resistors R1 and R2 limit the possible current drawnout of the input pins. Diodes D1 and D2 prevent theinput pins (VIN+ and VIN–) from going too far aboveVDD, and dump any currents onto VDD. Whenimplemented as shown, resistors R1 and R2 also limitthe current through D1 and D2.

FIGURE 4-2: Protecting the Analog Inputs.It is also possible to connect the diodes to the left ofresistors R1 and R2. In this case, current through thediodes D1 and D2 needs to be limited by some othermechanism. The resistors then serve as in-rush currentlimiters; the DC current into the input pins (VIN+ andVIN–) should be very small.

A significant amount of current can flow out of theinputs when the common mode voltage (VCM) is belowground (VSS); see Figure 2-31. Applications that arehigh impedance may need to limit the useable voltagerange.

4.1.3 NORMAL OPERATIONThe input stage of the MCP606/7/8/9 op amps use aPMOS input stage. It operates at low common modeinput voltage (VCM), including ground. WIth thistopology, the device operates with VCM up to VDD –1.1Vand 0.3V below VSS.

Figure 4-3 shows a unity gain buffer. Since VOUT is thesame voltage as the inverting input, VOUT must be keptbelow VDD–1.2V for correct operation.

FIGURE 4-3: Unity Gain Buffer has a Limited VOUT Range.

BondPad

BondPad

BondPad

VDD

VIN+

VSS

InputStage

BondPad

VIN–

V1R1

VDD

D1

R1 >VSS – (minimum expected V1)

2 mA

R2 >VSS – (minimum expected V2)

2 mA

V2R2

D2

R3

MCP60X

VOUT

+

–

VINMCP60X


MCP606/7/8/9
4.2 Rail-to-Rail OutputThere are two specifications that describe theoutput-swing capability of the MCP606/7/8/9 family ofop amps. The first specification (Maximum OutputVoltage Swing) defines the absolute maximum swingthat can be achieved under the specified loadconditions. For instance, the output voltage swings towithin 15 mV of the negative rail with a 25 kΩ load toVDD/2. Figure 2-23 shows how the output voltage islimited when the input goes beyond the linear region ofoperation.
The second specification that describes the output-swing capability of these amplifiers (Linear OutputVoltage Range) defines the maximum output swing thatcan be achieved while the amplifier still operates in itslinear region. To verify linear operation in this range, thelarge-signal DC Open-Loop Gain (AOL) is measured atpoints inside the supply rails. The measurement mustmeet the specified AOL conditions in the specificationtable.

4.3 Capacitive LoadsDriving large capacitive loads can cause stabilityproblems for voltage-feedback op amps. As the loadcapacitance increases, the feedback loop’s phasemargin decreases and the closed-loop bandwidth isreduced. This produces gain-peaking in the frequencyresponse, with overshoot and ringing in the stepresponse. A unity-gain buffer (G = +1) is the mostsensitive to capacitive loads, though all gains show thesame general behavior.

When driving large capacitive loads with these opamps (e.g., > 60 pF when G = +1), a small seriesresistor at the output (RISO in Figure 4-4) improves thefeedback loop’s phase margin (stability) by making theoutput load resistive at higher frequencies. Thebandwidth will be generally lower than the bandwidthwith no capacitive load.

FIGURE 4-4: Output Resistor, RISO stabilizes large capacitive loads.Figure 4-5 gives recommended RISO values fordifferent capacitive loads and gains. The x-axis is thenormalized load capacitance (CL/GN), where GN is thecircuit’s noise gain. For non-inverting gains, GN and theSignal Gain are equal. For inverting gains, GN is1+|Signal Gain| (e.g., -1 V/V gives GN = +2 V/V).

FIGURE 4-5: Recommended RISO Values for Capacitive Loads.After selecting RISO for your circuit, double-check theresulting frequency response peaking and stepresponse overshoot. Modify RISO’s value until theresponse is reasonable. Bench evaluation and simula-tions with the MCP606/7/8/9 SPICE macro model arehelpful.

4.4 MCP608 Chip Select The MCP608 is a single op amp with Chip Select (CS).When CS is pulled high, the supply current drops to50 nA (typical) and flows through the CS pin to VSS.When this happens, the amplifier output is put into ahigh-impedance state. By pulling CS low, the amplifieris enabled. The CS pin has an internal 5 MΩ (typical)pull-down resistor connected to VSS, so it will go low ifthe CS pins is left floating. Figure 1-1 shows the outputvoltage and supply current response to a CS pulse.

4.5 Supply BypassWith this family of operational amplifiers, the powersupply pin (VDD for single-supply) should have a localbypass capacitor (i.e., 0.01 µF to 0.1 µF) within 2 mmfor good high-frequency performance. It also needs abulk capacitor (i.e., 1 µF or larger) within 100 mm toprovide large, slow currents. This bulk capacitor can beshared with other nearby analog parts.

VIN

RISOVOUT

CL

MCP60X

100

1000

10000

10 100 1000 10000

Normalized Load Capacitance; CL/GN (F)

Rec

omm

ende

d R

ISO (Ω

)

10p 10n1n100p100

10k

1k

GN = +1GN = +2GN ≥ +4


MCP606/7/8/9
4.6 Unused Op AmpsAn unused op amp in a quad package (MCP609)should be configured as shown in Figure 4-6. Thesecircuits prevent the output from toggling and causingcrosstalk. Circuits A sets the op amp at its minimumnoise gain. The resistor divider produces any desiredreference voltage within the output voltage range of theop amp; the op amp buffers that reference voltage.Circuit B uses the minimum number of componentsand operates as a comparator, but it may draw morecurrent.
FIGURE 4-6: Unused Op Amps.

4.7 PCB Surface LeakageIn applications where low input bias current is critical,Printed Circuit Board (PCB) surface-leakage effectsneed to be considered. Surface leakage is caused byhumidity, dust or other contamination on the board.Under low humidity conditions, a typical resistancebetween nearby traces is 1012Ω. A 5V difference wouldcause 5 pA of current to flow, which is greater than theMCP606/7/8/9 family’s bias current at +25°C (1 pA,typical).

The easiest way to reduce surface leakage is to use aguard ring around sensitive pins (or traces). The guardring is biased at the same voltage as the sensitive pin.An example of this type of layout is shown in Figure 4-7.

FIGURE 4-7: Example Guard Ring Layout for Inverting Gain.

1. Non-inverting Gain and Unity-gain Buffer:a) Connect the non-inverting pin (VIN+) to the

input with a wire that does not touch thePCB surface.

b) Connect the guard ring to the inverting inputpin (VIN–). This biases the guard ring to thecommon mode input voltage.

2. Inverting Gain and Transimpedance Gain(convert current to voltage, such as photodetectors) amplifiers:a) Connect the guard ring to the non-inverting

input pin (VIN+). This biases the guard ringto the same reference voltage as the opamp (e.g., VDD/2 or ground).

b) Connect the inverting pin (VIN–) to the inputwith a wire that does not touch the PCBsurface.

4.8 Application Circuits

4.8.1 LOW-SIDE BATTERY CURRENT SENSOR

The MCP606/7/8/9 op amps can be used to sense theload current on the low-side of a battery using thecircuit in Figure 4-8. In this circuit, the current from thepower supply (minus the current required to power theMCP606) flows through a sense resistor (RSEN), whichconverts it to voltage. This is gained by the the amplifierand resistors, RG and RF. Since the non-inverting inputof the amplifier is at the load’s negative supply (VLM),the gain from RSEN to VOUT is RF/RG.

FIGURE 4-8: Low Side Battery Current Sensor.Since the input bias current and input offset voltage ofthe MCP606 are low, and the input is capable ofswinging below ground, there is very little errorgenerated by the amplifier. The quiescent current isvery low, which helps conserve battery power. Therail-to-rail output makes it possible to read very lowcurrents.

VDD

VDD

R1

R2

VDD

VREF

VREF VDDR2

R1 R2+-------------------⋅=

¼ MCP609 (A) ¼ MCP609 (B)

Guard Ring

VSSVIN- VIN+

VOUT VLM I+ LRSEN RF RG⁄( )=

RF

To Load

2.5V

RG5 kΩ 50 kΩ

To Load

VOUT

RSEN10Ω (VLM)

(VLP)

IL

to6.0V

MCP606


MCP606/7/8/9
4.8.2 PHOTODIODE AMPLIFIERSSensors that produce an output current and have highoutput impedance can be connected to atransimpedance amplifier. The transimpedanceamplifier converts the current into voltage. Photodiodesare one sensor that produce an output current.
The key op amp characteristics that are needed forthese circuits are: low input offset voltage, low inputbias current, high input impedance and an inputcommon mode range that includes ground. The lowinput offset voltage and low input bias current supporta very low voltage drop across the photodiode; thisgives the best photodiode linearity. Since thephotodiode is biased at ground, the op amp’s inputneeds to function well both above and below ground.

4.8.2.1 Photo-Voltaic ModeFigure 4-9 shows a transimpedance amplifier with aphotodiode (D1) biased in the Photo-voltaic mode (0Vacross D1), which is used for precision photodiodesensing.

As light impinges on D1, charge is generated, causinga current to flow in the reverse bias direction of D1. Theop amp’s negative feedback forces the voltage acrossthe D1 to be nearly 0V. Resistor R2 converts the currentinto voltage. Capacitor C2 limits the bandwidth andhelps stabilize the circuit when D1’s junctioncapacitance is large.

FIGURE 4-9: Photodiode (in Photo-voltaic mode) and Transimpedance Amplifier.

4.8.2.2 Photo-Conductive ModeFigure 4-9 shows a transimpedance amplifier with aphotodiode (D1) biased in the Photo-conductive mode(D1 is reverse biased), which is used for high-speedapplications.

As light impinges on D1, charge is generated, causinga current to flow in the reverse bias direction of D1.Placing a negative bias on D1 significantly reduces itsjunction capacitance, which allows the circuit to

operate at a much higher speed. This reverse bias alsoincreases the dark current and current noise, however.Resistor R2 converts the current into voltage. CapacitorC2 limits the bandwidth and helps stabilize the circuitwhen D1’s junction capacitance is large.

FIGURE 4-10: Photodiode (in Photo-conductive mode) and Transimpedance Amplifier.

4.8.3 TWO OP AMP INSTRUMENTATION AMPLIFIER

The two op amp instrumentation amplifier shown inFigure 4-11 serves the function of taking the differenceof two input voltages, level-shifting it and gaining it tothe output. This configuration is best suited for highergains (i.e., gain > 3 V/V). The reference voltage (VREF)is typically at mid-supply (VDD/2) in a single-supplyenvironment.

FIGURE 4-11: Two Op Amp Instrumentation Amplifier.The key specifications that make the MCP606/7/8/9family appropriate for this application circuit are lowinput bias current, low offset voltage and highcommon-mode rejection.

VOUT ID1R2=

R2

D1

VOUT

Light

C2

VDDID1

MCP606

VOUT ID1R2=

R2

D1

VOUT

Light

C2

VDDID1

VB

VB 0<

MCP606

VOUT V1 V2–( ) 1R1R2------

2R1RG----------+ +

⎝ ⎠⎜ ⎟⎛ ⎞

VREF+=

R2R1VOUT

V2

VREF

R1R2

V1

RG

½ MCP607

½ MCP607


MCP606/7/8/9
4.8.4 THREE OP AMP
INSTRUMENTATION AMPLIFIERA classic, three op amp instrumentation amplifier isillustrated in Figure 4-12. The two input op ampsprovide differential signal gain and a common modegain of +1. The output op amp is a difference amplifier,which converts its input signal from differential to a sin-gle ended output; it rejects common mode signals at itsinput. The gain of this circuit is simply adjusted with oneresistor (RG). The reference voltage (VREF) is typicallyreferenced to mid-supply (VDD/2) in single-supplyapplications.

FIGURE 4-12: Three Op Amp Instrumentation Amplifier.

4.8.5 PRECISION GAIN WITH GOOD LOAD ISOLATION

In Figure 4-13, the MCP606 op amps, R1 and R2provide a high gain to the input signal (VIN). TheMCP606’s low offset voltage makes this an accuratecircuit.

The MCP601 is configured as a unity-gain buffer. Itisolates the MCP606’s output from the load, increasingthe high-gain stage’s precision. Since the MCP601 hasa higher output current, with the two amplifiers beinghoused in separate packages, there is minimal changein the MCP606’s offset voltage due to loading effect.

FIGURE 4-13: Precision Gain with Good Load Isolation.

VOUT V1 V2–( ) 12R2RG---------+

⎝ ⎠⎜ ⎟⎛ ⎞ R4

R3------

⎝ ⎠⎜ ⎟⎛ ⎞

VREF+=

R2VREF

V1

R4R3

R2

RG

VOUT

V2

R4R3

½ MCP607

½ MCP607

MCP606

VOUT VIN 1 R2 R1⁄+( )=

R2R1

VOUT

VIN MCP601MCP606


MCP606/7/8/9
NOTES:

MCP606/7/8/9

5.0 DESIGN AIDSMicrochip provides the basic design tools needed forthe MCP606/7/8/9 family of op amps.

5.1 SPICE Macro ModelThe latest SPICE macro model for the MCP606/7/8/9op amps is available on the Microchip web site atwww.microchip.com. This model is intended to be aninitial design tool that works well in the op amp’s linearregion of operation over the temperature range. Seethe model file for information on its capabilities.

Bench testing is a very important part of any design andcannot be replaced with simulations. Also, simulationresults using this macro model need to be validated bycomparing them to the data sheet specifications andcharacteristic curves.

5.2 FilterLab® SoftwareMicrochip’s FilterLab® software is an innovativesoftware tool that simplifies analog active filter (usingop amps) design. Available at no cost from theMicrochip web site at www.microchip.com/filterlab, theFilterLab design tool provides full schematic diagramsof the filter circuit with component values. It alsooutputs the filter circuit in SPICE format, which can beused with the macro model to simulate actual filterperformance.

5.3 Mindi™ Circuit Designer & Simulator

Microchip’s Mindi™ Circuit Designer & Simulator aidsin the design of various circuits useful for active filter,amplifier and power-management applications. It is afree online circuit designer & simulator available fromthe Microchip web site at www.microchip.com/mindi.This interactive circuit designer & simulator enablesdesigners to quickly generate circuit diagrams,simulate circuits. Circuits developed using the MindiCircuit Designer & Simulator can be downloaded to apersonal computer or workstation.

5.4 Microchip Advanced Part Selector (MAPS)

MAPS is a software tool that helps semiconductorprofessionals efficiently identify Microchip devices thatfit a particular design requirement. Available at no costfrom the Microchip website at www.microchip.com/maps, the MAPS is an overall selection tool forMicrochip’s product portfolio that includes Analog,Memory, MCUs and DSCs. Using this tool you candefine a filter to sort features for a parametric search ofdevices and export side-by-side technical comparasionreports. Helpful links are also provided for Datasheets,Purchase, and Sampling of Microchip parts.

5.5 Analog Demonstration and Evaluation Boards

Microchip offers a broad spectrum of AnalogDemonstration and Evaluation Boards that aredesigned to help you achieve faster time to market. Fora complete listing of these boards and theircorresponding user’s guides and technical information,visit the Microchip web site at www.microchip.com/analogtools.

Two of our boards that are especially useful are:

• 8-Pin SOIC/MSOP/TSSOP/DIP Evaluation Board, P/N SOIC8EV

• 14-Pin SOIC/TSSOP/DIP Evaluation Board, P/N SOIC14EV

5.6 Application NotesThe following Microchip Application Notes are avail-able on the Microchip web site at www.microchip. com/appnotes and are recommended as supplementalreference resources.

• ADN003: “Select the Right Operational Amplifier for your Filtering Circuits”, DS21821

• AN722: “Operational Amplifier Topologies and DC Specifications”, DS00722

• AN723: “Operational Amplifier AC Specifications and Applications”, DS00723

• AN884: “Driving Capacitive Loads With Op Amps”, DS00884

• AN990: “Analog Sensor Conditioning Circuits –An Overview”, DS00990

These application notes and others are listed in thedesign guide:

“Signal Chain Design Guide”, DS21825


www.microchip.com

www.microchip.com/filterlab

www.microchip.com/filterlab

www.microchip.com/mindi

www.microchip.com/ maps

www.microchip.com/analogtools

www.microchip. com/appnotes

MCP606/7/8/9
NOTES:

MCP606/7/8/9

6.0 PACKAGING INFORMATION

6.1 Package Marking Information

Legend: XX...X Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week ‘01’)NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn)* This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information.

3e

3e

5-Lead SOT-23 (MCP606) Example:

XXNN SB25

XXXXXXXXXXXXXNNN

YYWW

8-Lead PDIP (300 mil) Example:

8-Lead SOIC (150 mil) Example:

XXXXXXXXXXXXYYWW

NNN

MCP606I/P256

0722

MCP606I/SN0722

256

MCP606I/P 256

0936

MCP606ISN 0936

256

3eOR

OR 3e

8-Lead TSSOP Example:

XXXX

YYWW

NNN

606

I936

256


MCP606/7/8/9
Package Marking Information (Continued)
14-Lead TSSOP (MCP609) Example:

XXXXXXXXYYWW

NNN

609IST0936

256

14-Lead PDIP (300 mil) (MCP609) Example:

XXXXXXXXXXXXXXXXXXXXXXXXXXXX

YYWWNNN

MCP609-I/P

0722256

MCP609

0936256I/P 3eOR

14-Lead SOIC (150 mil) (MCP609) Example:

XXXXXXXXXX

YYWWNNNXXXXXXXXXX

MCP609ISL

0722256

MCP609

0936256I/SL^^OR 3e


MCP606/7/8/9

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1 2 3

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b1b

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MCP606/7/8/9

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1 2 3

b

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MCP606/7/8/9

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MCP606/7/8/9

+ + , "-(-$%

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1 2

be

cA

A1

A2

L1 L

φ

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MCP606/7/8/9

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging


MCP606/7/8/9

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1 2 3

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eB

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MCP606/7/8/9

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D

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1 2 3

b

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A

A1

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β

φ

- *=()


MCP606/7/8/9

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N

E

E1

1 2

eb

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A1

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L1 L

φ

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MCP606/7/8/9

Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging


MCP606/7/8/9
NOTES:

MCP606/7/8/9

APPENDIX A: REVISION HISTORY

Revision F (September 2009)The following is the list of modifications:

1. Corrected RL text in Figure 2-22 in Section 2.0“Typical Performance Curves”.

2. Corrected devices’ pins in Table 3-1(Section 3.0 “Pin Descriptions”).

3. Updated Section 6.0 “Packaging Informa-tion”. Updated package outline drawings.

Revision E (March 2008)The following is the list of modifications:

1. Increased maximum operating VDD.2. Added test circuits.3. Updated performance curves.4. Added Figure 2-31.5. Added Section 4.1.1 “Phase Reversal”,

Section 4.1.2 “Input Voltage and CurrentLimits”, ad Section 4.1.3 “Normal Opera-tion”.

6. Updated Section 5.0 “Design Aids”7. Updated Section 6.0 “Packaging Informa-

tion”. Updated package outline drawings.

Revision D (February 2005)The following is the list of modifications:

1. Added Section 3.0 “Pin Descriptions”.2. Updated Section 4.0 “Applications Information”.3. Added Section 4.3 “Capacitive Loads”4. Updated Section 5.0 “Design Aids” to include

FilterLab® and to point to the latest SPICEmacro model.

5. Corrected and updated Section 6.0 “PackagingInformation”.

6. Added Appendix A: “Revision History”.

Revision C (January 2001)• Undocumented changes

Revision B (May 2000)• Undocumented changes

Revision A (January 2000)• Original Release of this Document.


MCP606/7/8/9
NOTES:

MCP606/7/8/9

PRODUCT IDENTIFICATION SYSTEMTo order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Device MCP606 = Single Op AmpMCP606T = Single Op Amp

Tape and Reel (SOIC, TSSOP)MCP607 = Dual Op AmpMCP607T = Dual Op Amp

Tape and Reel (SOIC, TSSOP)MCP608 = Single Op Amp with CSMCP608T = Single Op Amp with CS

Tape and Reel (SOIC, TSSOP)MCP609 = Quad Op AmpMCP609T = Quad Op Amp

Tape and Reel (SOIC, TSSOP)

Temperature Range I = -40°C to +85°C

Package OT = Plastic SOT-23, 5-leadP = Plastic DIP (300 mil Body), 8-lead, 14-leadSN = Plastic SOIC (3.90 mm body), 8-leadSL = Plastic SOIC (3.90 mm body), 14-leadST = Plastic TSSOP, 8-lead, 14-lead

Examples:a) MCP606-I/P: Industrial Temperature,

8LD PDIP package.b) MCP606-I/SN: Industrial Temperature,

8LD SOIC package.c) MCP606T-I/SN: Tape and Reel,

Industrial Temperature,8LD SOIC package.

d) MCP606-I/ST: Industrial Temperature,8LD TSSOP package.

e) MCP606T-I/OT: Tape and Reel,Industrial Temperature,5LD SOT-23 package.

a) MCP607-I/P: Industrial Temperature,8LD PDIP package.

b) MCP607T-I/SN: Tape and Reel,Industrial Temperature,8LD SOIC package.

a) MCP608-I/SN: Industrial Temperature,8LD SOIC package.

b) MCP608T-I/SN: Tape and Reel,Industrial Temperature,8LD SOIC package.

a) MCP609-I/P: Industrial Temperature,14LD PDIP package.

b) MCP609T-I/SL: Tape and Reel, Industrial Temperature,14LD SOIC package.

PART NO. X /XX

PackageTemperatureRange

Device


MCP606/7/8/9
NOTES:

Note the following details of the code protection feature on Microchip devices:• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of ourproducts. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such actsallow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding deviceapplications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.MICROCHIP MAKES NO REPRESENTATIONS ORWARRANTIES OF ANY KIND WHETHER EXPRESS ORIMPLIED, WRITTEN OR ORAL, STATUTORY OROTHERWISE, RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY, PERFORMANCE, MERCHANTABILITY ORFITNESS FOR PURPOSE. Microchip disclaims all liabilityarising from this information and its use. Use of Microchipdevices in life support and/or safety applications is entirely atthe buyer’s risk, and the buyer agrees to defend, indemnify andhold harmless Microchip from any and all damages, claims,suits, or expenses resulting from such use. No licenses areconveyed, implicitly or otherwise, under any Microchipintellectual property rights.

© 2009 Microchip Technology Inc.

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their respective companies.

© 2009, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.

Printed on recycled paper.

DS11177F-page 41

Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.


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