2.1 electrical characteristics (curves ...docid026016 rev 1 3/16 std80n4f6 electrical ratings 16 1...
TRANSCRIPT
This is information on a product in full production.
March 2014 DocID026016 Rev 1 1/16
STD80N4F6
Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A
STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package
Datasheet − production data
Figure 1. Internal schematic diagram
Features
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Applications• Switching applications
DescriptionThis device is an N-channel Power MOSFET
developed using the 6th
generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFET exhibits
the lowest RDS(on)
in all packages.
DPAK
1
3
TAB
Order code VDS RDS(on) max ID
STD80N4F6 40 V 6 mΩ 80 A
Table 1. Device summary
Order code Marking Package Packaging
STD80N4F6 80N4F6 DPAK Tape and reel
www.st.com
Contents STD80N4F6
2/16 DocID026016 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
DocID026016 Rev 1 3/16
STD80N4F6 Electrical ratings
16
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS
Drain-source voltage 40 V
VGS
Gate-source voltage ± 20 V
ID
(1)
1. Current limited by package.
Drain current (continuous) at TC
= 25 °C 80 A
ID
(1)Drain current (continuous) at T
C = 100 °C 56 A
IDM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 320 A
PTOT
Total dissipation at TC
= 25 °C 70 W
IAV
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJmax
)
40 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, I
D = I
AV, V
DD = 25 V)
149 mJ
Derating factor 0.47 W/°C
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case
Thermal resistance junction-case max 2.14 °C/W
Rthj-pcb
(1)
1. When mounted on FR-4 board of inch2, 2 oz Cu
Thermal resistance junction-pcb max 50 °C/W
Electrical characteristics STD80N4F6
4/16 DocID026016 Rev 1
2 Electrical characteristics
(TC
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
breakdown voltage
ID
= 250 μA, VGS
= 0 40 V
IDSS
Zero gate voltage
drain current (VGS
= 0)
VDS
= 40 V 1 μA
VDS
= 40 V, TC
=125 °C 100 μA
IGSS
Gate-body leakage
current (VDS
= 0)
VGS
= ± 20 V ± 100 nA
VGS(th)
Gate threshold voltage VDS
= VGS
, ID
= 250 μA 2 4 V
RDS(on)
Static drain-source
on-resistance
VGS
= 10 V, ID
= 40 A 5.5 6 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss
Input capacitance
VDS
= 25 V, f = 1 MHz,
VGS
= 0
- 2150 - pF
Coss Output capacitance - 335 - pF
Crss
Reverse transfer
capacitance
- 160 - pF
Qg
Total gate chargeV
DD = 20 V, I
D = 80 A,
VGS
= 10 V
(see Figure 14)
- 36 - nC
Qgs
Gate-source charge - 11 - nC
Qgd
Gate-drain charge - 9 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max Unit
td(on)
Turn-on delay time
VDD
= 20 V, ID
= 40 A,
RG
= 4.7 Ω, VGS
= 10 V
(see Figure 15)
- 10.5 - ns
tr
Rise time - 7.6 - ns
td(off) Turn-off delay time - 46.1 - ns
tf
Fall time - 11.9 - ns
DocID026016 Rev 1 5/16
STD80N4F6 Electrical characteristics
16
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
Source-drain current - 80 A
ISDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 320 A
VSD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage ISD
= 40 A, VGS
= 0 - 1.3 V
trr
Reverse recovery time
ISD
= 80 A, di/dt = 100 A/μs
VDD
= 32 V (see Figure 17)
- 41.1 ns
Qrr
Reverse recovery charge - 43.6 nC
IRRM
Reverse recovery current - 2.1 A
Electrical characteristics STD80N4F6
6/16 DocID026016 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
ID
10
1
0.10.1 1 VDS(V)10
(A)
Operation in
this
area is
Limite
d by max R
DS(on)
10ms
1ms
100µs
Tj=175°CTc=25°C
Singlepulse
100
AM15599v1
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance
ID
150
100
50
00 4 VDS(V)
(A)
2
200
VGS= 4 V
VGS= 5 V
VGS= 6 V
VGS= 7, 8, 9, 10 V
AM15600v1ID
60
40
20
02 4 VGS(V)6
(A)
3 5 7
80
100
8
VDS= 2 V
120
140
9 10
180
AM15601v1
VGS
6
4
2
00 10 Qg(nC)
(V)
40
8
20 30
10
VDD=20V
ID=80A12
AM15602v1RDS(on)
5.5
5
4.5
40 40 ID(A)
(mΩ)
20 60
6
6.5
80
VGS= 10V
AM15603v1
DocID026016 Rev 1 7/16
STD80N4F6 Electrical characteristics
16
Figure 8. Capacitance variations Figure 9. Drain-source diode forward characteristics
Figure 10. Normalized gate threshold voltage vs temperature
Figure 11. Normalized on-resistance vs temperature
Figure 12. Normalized v(BR)DSS vs temperature
C
1500
1000
500
00 20 VDS(V)
(pF)
10 30
Ciss
CossCrss
40
2000
2500
AM15352v1 VSD
0 40 ISD(A)
(V)
20 60 800
0.2
0.4
0.6
0.8
1.0TJ=-50°C
TJ=150°C
TJ=25°C
AM15604v1
VGS(th)
0.6
0.4
0.2
0-75 -25 TJ(°C)
(norm)
-50
0.8
500 25 75 100
1ID=250 µA
125
1.2
AM15354v1 RDS(on)
1.5
1
0TJ(°C)
(norm)
0.5
ID=40AVGS=10V
-75 0-50 75-25 50 10025 125
2
150
AM15356v1
V(BR)DSS
-75 0 TJ(°C)
(norm)
-50 75-25 50 1000.6
0.7
0.8
0.9
1
1.1
ID = 1mA
25 125
1.2
1.3
150
AM15353v1
Test circuits STD80N4F6
8/16 DocID026016 Rev 1
3 Test circuits
Figure 13. Switching times test circuit for resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load switching and diode recovery times
Figure 16. Unclamped inductive load test circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF3.3μF
VDD
AM01469v1
VDD
47kΩ 1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200μF
PW
IG=CONST100Ω
100nF
D.U.T.
VG
AM01470v1
AD
D.U.T.
SB
G
25 Ω
A A
BB
RG
G
FASTDIODE
D
S
L=100μH
μF3.3 1000
μF VDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200μF
3.3μF VDD
AM01472v1
V(BR)DSS
VDDVDD
VD
IDM
ID
AM05540v1
Inductive Load Turn - off
Id
Vgs
Vds
90%Vds
10%Id
90%Vgs on
td(v)
tc(off)
10%Vds
90%Id
Vgs(I(t))
on
tf(i)tr(v)
))
DocID026016 Rev 1 9/16
STD80N4F6 Package mechanical data
16
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Package mechanical data STD80N4F6
10/16 DocID026016 Rev 1
Figure 19. DPAK (TO-252) type A drawing
0068772_M_type_A
DocID026016 Rev 1 11/16
STD80N4F6 Package mechanical data
16
Table 8. DPAK (TO-252) type A mechanical data
Dim.mm
Min. Typ. Max.
A 2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b 0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e 2.28
e1 4.40 4.60
H 9.35 10.10
L 1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R 0.20
V2 0° 8°
Package mechanical data STD80N4F6
12/16 DocID026016 Rev 1
Figure 20. DPAK (TO-252) type A footprint (a)
a. All dimensions are in millimeters
Footprint_REV_M_type_A
DocID026016 Rev 1 13/16
STD80N4F6 Packaging mechanical data
16
5 Packaging mechanical data
Figure 21. Tape for DPAK (TO-252)
P1A0 D1
P0
F
W
E
D
B0K0
T
User direction of feed
P2
10 pitches cumulativetolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. onlyincluding draft andradii concentric around B0
AM08852v1
Top covertape
Packaging mechanical data STD80N4F6
14/16 DocID026016 Rev 1
Figure 22. Reel for DPAK (TO-252)
Table 9. DPAK (TO-252) tape and reel mechanical data
Tape Reel
Dim.mm
Dim.mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R 40
T 0.25 0.35
W 15.7 16.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
T
Tape slot in core fortape start 25 mm min.width
AM08851v2
DocID026016 Rev 1 15/16
STD80N4F6 Revision history
16
6 Revision history
Table 10. Document revision history
Date Revision Changes
03-Mar-2014 1
Initial release. The part number previously included in datasheet
DocID023839
STD80N4F6
16/16 DocID026016 Rev 1
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFESUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONSOR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS ATPURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT ISEXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRYDOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED AREDEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2014 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com