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TRANSCRIPT
1
THERMODYNAMICS OF SURFACES AND
INTERFACES
1. Introduction
Everything has to end somewhere. For solids, or liquids that
"somewhere" is a surface, or an interface between phases. For liquids, the
interface is between the liquid and a vapor phase or between two
immiscible liquids. For solids, the interface can be between the solid and
a vapor or liquid phase, between two chemically different solids, or
between crystals (grains) of the same chemical composition but differing
in crystallographic orientation. The properties of these interfaces differ
from bulk properties and they influence the properties of materials in
many ways.
An atom at a free surface of a solid has greater energy than an atom in
the interior (less tightly bonded). Surface atoms are at higher energy
levels. The sum of all excess energies (excess with respect to atoms
inside) of the surface atoms is the surface energy.
Surface energy () can be defined in terms of U, H, A or G depending on
the physical conditions:
U
A
H
A
A
A
G
AS V S P T V T P, , , ,
The most commonly used one is based on G. Then
dG = V dP - S dT + dA
There are several commonly observed manifestations of this surface
energy. As a liquid droplet tries to minimize its energy, it assumes a
spherical shape- the shape that minimizes the surface area. Smaller
droplets tends to agglomerate into larger droplets. In sintering small
particles reduce surface to volume ratios.
2. Surface Tension: The Mechanical Analog of Surface Energy
A film of liquid pulled by a force F, thereby creating new surface (two
surfaces top and bottom), the balance of forces and the work done can be
expressed as
2
l
dx
F
2 l dx = F dx
F
l2
The units of surface tension, , are force/length. By multiplying both the
numerator and denominator of by a length term, the dimensions become
energy/area. Thus , can be thought of as surface tension or surface
energy.
3. Approximate Calculation of Solid Surface Energies Assuming binding energy of an atom to a solid is the result of discrete bonds to its
nearest neighbors, then energy of one bond, ,
H
z N
s
A0 5.
Hs: molar enthalpy of sublimation (breaking all the bonds)
z: coordination number
NA: Avagadro's number
There are 0.5 z NA bonds per mole.
If we cleave an FCC crystal along (111) plane, 3 bonds per atom will be broken.
Because there are two surfaces formed, the work required to form the surfaces will be
3/2 per surface atom. Then the work per surface atom is
3
WH
Nfor FCC zS
A
3
2 412
( )
The surface energy is then
H
N
N
A
S
A4
where (N/A) is the number of atoms per unit area. For FCC, along (111) plane
N/A=4/( 3 02a ). Where ao is the lattice parameter.
For a (100) plane there are 4 broken bonds per atom, and the number of atoms per unit
area is 2/ a02
(a) (b) Atomic packing (a) on the (111) plane, and (b) on the (100) plane of an FCC crystal.
4
For copper Hs = 170000 J/mole and ao = 3.615 A.
Using (100) plane, = 1440 ergs/cm2
Experimental results indicate that this value is about 1600 ergs/cm2.
This shows that computation gives an inaccurate but reasonable values. As expected a
simple model of this kind is useful in determining approximate values and visulizing
the physical phonemanon of the of the system. However, for accurate determinations
other changes that takes place in the vicinity of the surface has to be taken into
account.
4. Effect of Surface Curvature In physical systems surface between two phases is not infinitely thin, geometrical
plane. They extend to sevral atomic layers. In a system with only one component, C, a
geometrical surface can be located by assigning no mass to the surface. That is the
shaded area on both sides of the surface are set equal.
[C]
Phase I Phase II
Distance
Surface
A B
Surface between two phases: I and II, S. If this surface moves between A and B, the
volumes of the phases will change: phase I increases, phase II decreases.
Schematically
phase I
A
B
S
phase II The total change of Gibbs energy
dG = GI dnI + GII dnII + dA = Wrev
5
dnI and dnII are changes in the masses as infinitesimal movement of surface takes
place. At equilibrium Wrev is zero.
For one component system, G = = Go
I dnI + II dnII + dA = 0
dnI = -dnII = dn
Then, II - I = dA
dn
If the surface is flat (infinite radius of curvature), then dA/dn is zero, because the area
of the interface does not change as mass moves from phase I to phase II. Thus, I = II,
this is sometimes written as
I = II =
chemical potential of a material with an infinite radius of curvature.
For a curved surface, the area changes as the boundary moves. Introducing the molar
volume
VdV
dn
II - I = dA
dn = V
dA
dV
The ratio dA/dV is not zero for a curved surface.
For a spherical surface
phase I
phase II
V = r3/3 and A = r2
where is the solid angle subtended by the portion of the surface being considered:
dV = r2 dr and dA = 2 r dr
dA/dV = 2/r
Therefore, II - I = V 2
r
where V molar volume and is the interfacial (surface) energy between phases I and
II.
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Compare two conditions for the same material;
I-flat surface,
II- surface with finite radius of curvature.
Then, the diffrence in chemical potentials of flat surface, , and the surface with
finite radius of curvature, r is given by
r - = V 2
r
Thus, chemical potential of a material with a finite radius of curvature is greater than
the chemical potential for that same material with an infinite radius of curvature. This
difference in manifests itself in several ways.
For nonspherical, curved surface with principal radii of curvatures r1 and r2,
r r1 2, = V (1 1
1 2r r )
Equation that shows the difference between the chemical potentials of flat surface, and
the surface with finite radius of curvature can also be derived using mechanical
argument combined with thermodynamics. If we think the surface as a membrane
surrounding the condensed phase, and the surface tension as the stress in the
membrane, we can establish the pressure difference accross the curved surface
through a force balance.
Pi
Po
The force tending to push the two halves of the sphere apart is the product of the
cross-sectional area at the mid point ( r2) and the difference in pressure between
inside and outside of the sphere (Pi - Po = P). This force ( r2 P) is balanced by the
surface tension force (2 r ). Thus
r2 P = 2 r
Then, P = 2
r
This increased pressure on the condensed phase translates into a difference in
chemical potential.
d = V dP (at constant T)
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Integration between two limits yields above relationship
r - = V 2
r
Compute the pressure in a one micron diameter water droplet formed in supercooled
water vapor at 80oC. The vapor pressure of water at 80oC is 0.52 atm. The surface
energy of water may be taken as 80 ergs/cm2.
P = 2 2 80 10 10
0 5 10320000
27 4 2
2
6 2
r mPa
ergs
cm
Jerg
cm
m N
m
.( )
P = 320000
1013333 16
Paatm
atmPa
. .
Pi = 3.16 + Po = 3.16 + 0.52 = 3.68 atm.
4.1. Effect of Surface Curvature on Vapor Pressure
A condensed material (solid or liquid) is in equilibrium with its vapor. At equilibrium,
chemical potential of the condensed phase, c, is equal to that of its vapor, v. This is
valid for both flat (a) and curved (b) surfaces.
L
L
L
L
LL
L
V
L
V
(a) (b)
c, = v,
c,r = v,r
c,r - c, = V 2
r
From chemical potentials
c,r - c, = v,r - v, = R T ln P
P
ro
o
8
where Pro is the vapor pressure of a particle of radius r. Po
is the equilibrium vapor
pressure over a flat surface. Therefore,
ln P
P
ro
o
= V
RT r
2
Calculate and plot as function of radius the vapor pressure in a system with liquid zinc
droplets suspended in zinc vapor at 900 K.The vapor pressure of zinc over bulk liquid
at this temperature is 2.5x10-2 atm; the molar volume of the liquid is 9.5 cc/mol and
= 380 ergs/cm2.
ln P
P
ro
o
= V
RT r
2 =
9 5
8 314 900
2 38010
9 6 103
2 78.
. ( )
.
( )
cmmol
Jmol K
ergs
cm Jerg
K r cm r cm
P atm ero r cm( ) .
.
( )
2 5 10 2
9 6 10 8
r = 10-3 cm; Pro = 2.5002x10
-2 atm
r = 10-4 cm; Pro = 2.5024x10
-2 atm
r = 10-5 cm; Pro = 2.524x10
-2 atm
r = 10-6 cm; Pro = 2.75x10
-2 atm
Pro x102 (atm)
2.75
2.7
2.65
2.6
2.55
2.5
2.45
0.01 0.1 1 10 rx104 (cm)
4.2. Phase Boundary Shift in Unary Systems
9
Consider a unary two phase (+) system in which the curvature of the - boundary
plays a role in the conditions for equilibrium.
T = T
P = 2
r; P = P +
2
r
=
d = V dP - S dT
d = V dP - S dT = V d(P + 2
r) - S dT
V dP - S dT d = V d(P + 2
r) - S dT
rearrangement yields,
(S - S) dT - (V - V) dP - 2 V dr
r 2 = 0
By seting S - S = Str(/) and V - V = Vtr(/), above equation can be
Str(/) dT - Vtr(/) dP - 2 V dr
r 2 = 0
Integrating between two limits (radius of curvature) gives the result of curvature on
phase boundary shift due to curvature. The first two terms are identical with the
Clausius-Clapeyron equation in which variations due to geometric effects are not
considered; the third term contains the effect of curvature on the equilibrium
conditions.
4.3. Solubility of Small Particles
To simplify the problem, consider an A-B system with a solubility line as shown
(assuming vanishingly small solubility for A in B).
T
XB
XB
aB
1
0
T1
at T1 the composition of the phase in equilibrium with the phase is XB,. Hence
aB = 1 at XB = XB,. phase is taken as pure B, for simplification.
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If material B exists as small spherical particles, the chemical potential of B as a
function of its radius of curvature is
B,r - B, = V 2
r
The surface energy, - is the interfacial energy between pure B and .
B,r - B, = R T (ln aB,r - ln aB,)
If B obeys Henry's law in phase, then aB, = Bo XB, and aB,r = B
o XB,r
Combination of relationships yields, B,r - B, = R T ln X
X
B r
B
,
,
Then, ln X
X
B r
B
,
,
= V
RT r
2
where XB,r is the solubility of B in A () when radius of curvature for B particles is r,
XB, is solubility when B has an infinite radius of curvature (flat surface). The
solubility of B increases as its particle size decreases. If B exists as small spheres and
large spheres, the solubility of B will vary with particle size. In the material
immediately surrounding the small particles, the concentration of B will be higher. If
sample is held at high temperature where B atoms are mobile, the small particles will
tend to dissolve and the larger particles will grow. This is coarsening.
4.4. Melting Temperature of Small Particles
To examine the effect of curvature upon solid-liquid equilibria, compare the
solid/liquid equlibria for (a) infinite and (b) finite radius of curvature.
S
S
S
S
SS
S
L
S
L
(a) (b)
When a particle of solid in equilibrium with its liquid.
Ts = Tl
s = l
Pressure difference in solid and liquid are related by; P = 2 l s
r
Ps = Pl + 2 l s
r
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dl = Vl dPl - Sl dT
ds = Vs dPs - Ss dT = Vs d(Pl + 2 l s
r
) - Ss dT
at equilibrium, s = l, hence ds = dl
Vl dPl - Sl dT = Vs d(Pl + 2 l s
r
) - Ss dT
rearrangement yields,
(Sl - Ss) dT - (Vl - Vs) dPl - 2 Vs l-s dr
r 2 = 0
Assuming that we are not concerned with overall pressure changes on the liquid (dPl)
and Sl - Ss = Sm
Sm dT = 2 Vs l-s dr
r 2
Integrating from the melting temperature of a large particle (r=, T, radius of
curvature) to melting point of a particle with radius r (r, Tr). Assuming Sm constant,
Sm dT = 2 Vs l-s dr
r 2
Sm T = -2 Vs l-s 1
r
Then, T = 2V
S
l s
m
1
r
When a liquid is cooled below its bulk melting point the solid phase forms and grows
as dendrites. The scale of the resulting microstructure, indicating whether it is fine
grained or a coarse structure and the rate at which it solidifies, is strongly influenced
by the size of tips as they grow. The tip radius is in turn determined by the
temperature difference between the liquid adjacent to tip and that of the supercooled
liquid surrounding it. Calculate this temperature difference for a silicon dendrite with
a tip radius of 0.1 microns growing into surrounding liquid that is undercooled 5oC
below the bulk melting point. The surface energy of the solid-liquid interface may be
taken as 150 ergs/cm2.
Assuming the liquid and solid at the tip of the dendrite are in local equilibrium. The
temperature of the liquid at the interface can be calculated from
T = ergJ
molJ
cm
ergsmol
cm
m
sl
cm
K
rS
V 7
410
101.0
1
1683
46500
1502.11212 2
3
T = -1.22 K
Ti = 1683 - 1.22 = 1681.8 K
Tl = 1683 - 5 = 1678 K
5. The Equilibrium Shape of Crystals
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If surface energies of a condensed phase is isotropic, as in liquid, then based on
common exprience the condensed phase will assume a spherical shape at equilibrium.
If surface energy varies with crystallographic orientation, as in a solid, it is expected
that the equilibrium shape to be determined by the relative surface energies of the
crystallographic planes. The presence of low surface energy planes would be prefered
and the equlibrium shape would not be a sphere.
The equlibrium shape of a crystal is determined by minimizing its surface free energy.
If a crystal may be found by planes 1, 2, 3, ... whose exposed area will be A1, A2, A3,
..., the equilibrium shape will be the one that minimizes i Ai. A graphical method
for doing this uses a Wulff plot.
In this method, the surface energy of a crystal is ploted in polar coordinates. Planes are
drawn at each point normal to the radius. The equilibrium shape will be defined by the
interior surface of the planes erected perpendicular to the polar plot.
The development of facetes in two dimensions can be illustrated by a simple example.
Consider the two-dimensional cubic crystal shown
(110)
(100) (100)
a
c
a - 2 /2 c
When looking in (100) direction, planes (110) and (100) constitutes the exterior of the
surface. a and c dimensions of the crystal will be calculating by minimizing the
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surface energy Es at constant crystal area, A. Crystal is symmetrial in the vertical and
horizontal directions; hence only the upper right quadrant may be isolated for analysis.
Es = 2 a c2
2 o + c 1
A = a2 - c2
4
The surface energy is minimized by setting the differential of Es with respect to c
equal to zero at costant A. The result is
c
a 2 2 1
0
the ratio c/a is a measure of the relative amounts of exposed (110) and (100) planes. If
the surface energies of planes are equal, o = 1, then
c = 2 a c2
2
and the size of the two facets will be equal.