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Conference at a Glance

Conference at a Glance

(latest version at http://www.eee.hku.hk/edssc2016/program.html)

Aug 3 (Wednesday) Aug 4 (Thursday) Aug 5 (Friday) Opening Ceremony

(8:45 – 9:15) T1

Digital 2

T2

HV and Power Devices 1

T3

RF Devices and Circuits

F1

Data Converters 2

F2

Analog 2

F3 HV and Power

Devices 2 Plenary Session 1 (9:15 – 10:45)

Break (10:45- 11:00) Break (9:50 – 10:10) Break (9:50 – 10:10)

Plenary Session 2 (11:00 – 12:30)

T4 Analog 1

T5 Emerging Devices 3

T6 High Speed

Circuits

F4 Device

Modeling and Simulation 2

F5 Sensors,

Imagers and MEMS 2

F6 Power

Management ICs

Lunch (12:30 – 14:10) Lunch (12:00 – 14:00) Closing Remarks (12:00 – 12:15) W1

Nano-Electronics 1

W2 Emerging Devices 1

W3 Sensors,

Imagers and MEMS 1

T7 Device

Modeling and Simulation 1

T8 Device

Physics and Reliability

T9 Novel Devices

2

Break (15:40 – 16:00) Break (15:50 – 16:10) Poster Session (15:50 - 17:40)

Please note that the poster session will be held on Thursday August 4

W4 Emerging Devices 2

W5 Novel Devices

1

W6 Digital 1

T10 Memory

Technology & Dielectrics

T11 Nano-

Electronics 2

T12 Data

Converters 1

Break (17:40 – 19:00) Banquet

(19:00 – 21:00)

August 3-5. 2016 The University of Hong Kong

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC’16)

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August 3, 2016 (Wednesday)

8:15-8:45 Registration (Rayson Huang Theatre)

Opening Ceremony and Plenary Session August 3 Wednesday (8:45 - 12:30) Venue: Rayson Huang Theatre Session Chairs: W.T. Ng and J.J. Liou 8:45 - 9:15 Opening Ceremony

9:15 - 10:00

PL1. Memory - the N3XT Frontier Philip Wong Stanford University, USA

10:00 - 10:45

PL2. Device Modeling for Circuit Simulation in Nanometer Technology Zhihong Liu ProPlus Design Solutions, USA

10:45 - 11:00 Break

11:00 - 11:45

PL3. Circuit Design in Nano-Scale CMOS Technologies Kevin Zhang Intel, USA

11:45 12:30

PL4. Mixed-Signal Circuits for the Data-Driven World Boris Murmann Stanford University, USA

Oral Sessions (Knowles Building) W1: Nanoelectronics 1 August 3, Wednesday (14:10 - 15:40) Venue: Room XXX Session Chairs: TBA

14:10 - 14:40

Inv.1 Nanocarbon Via Interconnects Cary Yang (Invited)Santa Clara University, USA

14:40 - 15:00

W1.1 A Novel Thin-Film Transistor using Carbon Nanotubes as Both Channel and Electrodes Peijian He, Yanyan Deng, Chun Chen, Min Zhang Peking University, Shenzhen, China Shenzhen Thin Film Transistor and Advanced Display Lab, China

15:00 - 15:20

W1.2 Electrical performances of ALD HfTiO back-gated multilayer MoS2 transistors Ming Wen, J. P. Xu, L. Liu, Y. Huang, P.T. Lai, and W. M. Tang Huazhong University of Science and Technology, Wuhan, China University of Hong Kong, Hong Kong Polytechnic University, Hong Kong

15:20 - 15:40

W1.3 Nanostructured TiO2 Schottky Diode with Large Surface Area for Chemical Sensors Wenhao Yan, Jerry Yu, Derek Ho City University of Hong Kong, Hong Kong

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W2: Emerging Devices 1 August 3, Wednesday (14:10 - 15:40) Venue: Room XXX Session Chair: TBA 14:10 - 14:40

Inv.2 Bandgap Engineering in 2D Layered Materials Zhihong Chen (Invited)Purdue University, USA

14:40 - 15:00

W2.1 Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Linearity and Analog Performance Ajay Kumar and Rishu Chaujar Delhi Technological University, India

15:00 - 15:20

W2.2 Effect of Si-Delta Doping and Barrier Lengths on The Performance of Triple Barrier GaAs/AlGaAs Resonant Tunneling Diode Man Mohan Singh, M. J. Siddiqui Aligarh Muslim University, Aligarh, India

15:20 - 15:40

W2.3 Analytical Drain Current Model for Long-Channel Double-Gate Negative Capacitance Junctionless Transistors Using Landau Theory Chunsheng Jiang1, Renrong Liang, Jing Wang, and Jun Xu Tsinghua University, Beijing, China

W3: Sensors, Imagers and MEMS 1 August 3, Wednesday (14:10 - 15:40) Venue: Room XXX Session Chair: TBA 14:10 - 14:40

Inv.3 MEMS Pressure Sensors for High-Temperature High-Pressure Downhole Applications Fan Zeng, Lei Lu, Yiming Zhang, Shichao Guo, Man Wong, and Kevin Chau (Invited)Institute of Geology and Geophysics, Chinese Academy of Sciences, Beijing, China Hong Kong University of Science and Technology, Hong Kong

14:40 - 15:00

W3.1 CMOS Computational Pixel for Binary Temporal Optically Encoded High-Speed Imaging Yi Luo, Shahriar Mirabbasi, and Derek Ho University of British Columbia, Canada City University of Hong Kong, Hong Kong

15:00 - 15:20

W3.2 An Oscillator-based CMOS Magneto-Sensitive Biosensor with A Low Noise and Low Temperature Coefficient LDO Regulator Jinwen Geng, Lei Zhang, Cheng Zhu, and He Qian Tsinghua University, Beijing, China

15:20 - 15:40

W3.3 Inductance to DC Resistance Ratio Optimization of On-Chip Closed-Core Spiral Power Inductors Shujie Chen, Yunkun Li, and Rongxiang Wu University of Electronic Science and Technology of China, Chengdu, China

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W4: Emerging Devices 2 August 3, Wednesday (16:00 - 17:30) Venue: Room XXX Session Chair: TBA 16:00 - 16:30

Inv.4 Manufacturing of Using Spray Method to Produce Solar Cell Po-Ying Chen (Invited)National Chin-Yi University of Technology, Taiwan

16:30 - 16:50

W4.1 Quantum Ballistic Transport In Ultra-Small Silicon Channel Cylindrical Gate All Around Junction Less Nanowire Transistor Using NEGF Formalism Md. Mohsinur Rahman Adnan, Md. Samzid Bin Hafiz, Nujhat Tasneem, Quazi D.M. Khosru Bangladesh University of Engineering and Technology, Bangladesh

16:50 - 17:10

W4.2 The Immunity of Doping-less Junctionless Transistor Variations Including the Line Edge Roughness Wenbo Wan, Haijun Lou, YingXiao, Xinnan Lin Peking University, Shenzhen, China Lanzhou University of Technology, Lanzhou, China

17:10 - 17:30

W4.3 Ultra-thin and Ultra-flexible Temperature /Strain Sensor with CNT Nanostrips Yihao Chen, Bingwei Lu, Xue Feng Tsinghua University, China

W5: Novel Devices 1 August 3, Wednesday (16:00 - 17:30) Venue: Room XXX Session Chair: TBA 16:00 - 16:30

Inv.5 Investigation and Application of Novel Transistors with Semi-Floating Gate Device Concept and Device Structure Peng-fei Wang (Invited)Fudan University, China

16:30 - 16:50

W5.1 Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Chongjie Wang, and Rongshan Wei Tsinghua University, Beijing, China Beijing University of Chemical Technology, Beijing, China Fuzhou University, Fuzhou, China

16:50 - 17:10

W5.2 Near-infrared Light Emitting Diode Array Based on Ordered Si Micropillar/InGaZnO-nanofilm Heterojunctions Jin Wang, Renrong Liang, Libin Liu, Bolin Shan, Jing Wang, Jun Xu Tsinghua University, Beijing, China

17:10 - 17:30

W5.3 Solar-Blind Deep-Ultraviolet Photodetector Based on the β-Ga2O3 Thin Film Grown on Annealed C-plane Sapphire Substrate Z.H. Wu, L.X. Qian, T. Sheng, Y.Y. Zhang and X.Z. Liu University of Electronic Science and Technology of China, Chengdu, China

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W6: Digital 1 August 3, Wednesday (16:00 - 17:30) Venue: Room XXX Session Chair: TBA 16:00 - 16:30

Inv.6 Circuit Design of Physical Unclonable Function for Security Applications in Standard CMOS Technology Byong-Deok Choi (Invited)Hanyang University, South Korea

16:30 - 16:50

W6.1 Low Perfusion Algorithm used in Wearable Oximeter and Hardware Acceleration Xufeng Wu, Zhaoxia Zheng, Xiaogang Zeng, Panting Jiang Huazhong University of Science and Technology, Wuhan, China

16:50 - 17:10

W6.2 Voltage Comparison Based High Speed & Low Power Domino Circuit for wide fan-in Gates Pratosh Kumar Pal , Avaneesh Kumar Dubey, Sankit R. Kassa and R. K. Nagaria Motilal Nehru National Institute of Technology Allahabad, India

17:10 - 17:30

W6.3 Systolic Array Based VLSI Architecture for High Throughput 2-D Discrete Wavelet Transform Hongda Wang and Chiu-Sing Choy The Chinese University of Hong Kong, Hong Kong

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August 4, 2016 (Thursday)

T1: Digital 2 August 4, Thursday (8:50 - 9:50) Venue: Room XXX Session Chair: TBA 8:50 - 9:10

T1.1 A 0.68-to-1.44 GHz Low-Jitter All-Digital Phase-Locked Loop with A Novel PFD and A High Resolution DCO in 0.18μm CMOS Xiaoying Deng , Yanyan Mo, Xin Lin, Mingcheng Zhu Shenzhen University, China

9:10 - 9:30

T1.2 An Optimized Design of Reversible Magnitude and Signed Comparators Nagamani A N, Desik Rengarajan Vinod K Agrawal P.E.S Institute of Technology, Bangalore, India

9:30 - 9:50

T1.3 Designed the Embedded Processors on System Level Jih-Fu Tu St. John’s University, Taiwan

T2: HV and Power Devices August 4, Thursday (8:30 - 9:50) Venue: Room XXX Session Chair: TBA 8:30 - 8:50

T2.1 A Novel Split-Gate Structure for 85V Applications with Low Output Capacitance Ye Tian, Zhuo Yang, Fangjuan Bian, Xin Tong, Jing, Zhu, Weifeng Sun, Longxing Shi, and Yuanzheng Zhu, and Peng Ye Southeast University, Nanjing, China Wuxi NCE Power Co. Ltd., Wuxi, China

8:50 - 9:10

T2.2 An Improved Structure to Enhance the Robustness of SiC power MOSFETs for a Low Ron,sp Xintian Zhou, Ruifeng Yue, Gang Dai, Juntao Li, and Yan Wang Tsinghua University, Beijing, China Microsystem and Terahertz Research Center/China Academy of Engineering Physics, China

9:10 - 9:30

T2.3 A Variation Laterl Doping Layer and Lightly Doped Region Compensated Superjunction LDMOS Lixiao Liang, Haimeng Huang, Xingbi Chen University of Electronic Science and Technology of China, Chengdu, China

9:30 - 9:50

T2.4 Modeling of High Voltage LDMOSFET Using Industry Standard BSIM6 MOS Model Chetan Gupta, Harshit Agarwal, Yogesh S. Chauhan, Sourabh Khandelwal, Yen-Kai Lin, Chenming Hu, and Renaud Gillon Indian Institute of Technology Kanpur, Kanpur, India University of California Berkeley, USA ON Semiconductor, Belgium

T3: RF Devices and Circuits August 4, Thursday (8:30 - 9:50) Venue: Room XXX

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Session Chair: TBA 8:30 - 8:50

T3.1 High Power Performance AlGaN/GaN Double Heterostructure HMET with 0.1 μm Y-shaped Gate Encapsulated with Low-κ BCB Xinxin Yu, Jianjun Zhou, Yuechan Kong, Daqing Peng, Weibo Wang, Fangjin Guo, Haiyan Lu, Wen Wang, Cen Kong, Zhonghui Li, and Tangsheng Chen Nanjing Electronic Devices Institute, Nanjing, China

8:50 - 9:10

T3.2 Measurement and Modeling Techniques for InP-Based HBT Devices to 220GHz Haiyan Lu, Wei Cheng, Zhijiang Zhou, Oupeng Li，Bin Niu, Yuechan Kong, Tangsheng Chen Nanjing Electronic Devices Institute, Nanjing, China Hangzhou Dianzi University, Hangzhou, China University of Electronic Science and Technology of China Chengdu, China

9:10 - 9:30

T3.3 A Reconfigurable UHF CMOS Voltage Multiplier Jingbin Jia and Ka Nang Leung The Chinese University of Hong Kong, Hong Kong

9:30 - 9:50

T3.4 A 66-to-76GHz E-band QPLL with Amplifier Feedback QVCO in 65-nm CMOS Xinxin Zhu, Lei Zhang, Yan Wang, and Zhiping Yu Tsinghua University, Beijing, China

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T4: Analog 1 August 4, Thursday (10:10 – 12:00) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.7 Design Guidelines of ΣΔ Modulators: From System to Chip and Application to Reconfigurable ADCs Jośe M. de la Rosa (Invited)Instituto de Microelectrónica de Sevilla, Spain

10:40 - 11:00

T4.1 An Analysis of Offset Calibration Based Additional Load Capacitor Imbalance for Two-Stage Dynamic Comparator Dong Li, Qiao Meng, Fei Li and Linfeng Wang Southeast University, Nanjing, China

11:00 - 11:20

T4.2 A Fast Three-Level Feedback Technique in Continuous-Time Delta-Sigma Modulators Debajit Basak, Daxiang Li, Zhongi Fu, Jiangpeng Wang, Zhang Yang and Kong-Pang Pun The Chinese University of Hong Kong, Hong Kong

11:20 - 11:40

T4.3 Electrostatic Energy Harvester Based on Charge-Trapping Nonvolatile Memory Structure J.J. Shi and X.D. Huang Southeast University, Nanjing, China

11:40 - 12:00

T4.4 A Five-Order Butterworth Low-Pass Filter with DC Offset Cancellation for WLAN Applications Dongyang Yan, Lei Zhang, Li Zhang, and Yan Wang Tsinghua University, Beijing, China.

T5: Emerging Devices 3 August 4, Thursday (10:10 – 12:00) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.8 Toward High-Performance Electronics based on Carbon Nanomaterials Shu-Jen Han (Invited)IBM T.J. Watson Research Center US

10:40 - 11:00

T5.1 Exposure Optimization for Multi-Bit Quanta Image Sensor with Ultra-Small Well Capacity Ka Wai Cheung, Hiu Tung Wong, and Derek Ho City University of Hong Kong, Hong Kong

11:00 - 11:20

T5.2 High-Speed Disturbance-Free Nonvolatile Flip-Flop Based on Complementary Polarizers Lianhua Qu, Zhenyu Zhao, Yao Wang, Huan Li, Haoyue Tang, Quan Deng, and Peng Li National University of Defense Technology, Changsha, China

11:20 - 11:40

T5.3 Comparative Study of InGaZnO Thin-Film Transistors with Single and Dual NbLaO Gate Dielectric Layers J.Q. Song, P.T. Lai, and X. D. Huang University of Hong Kong, Hong Kong Southeast University, Nanjing, China

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11:40 - 12:00

T5.4 Modeling of Fringe Current for Semiconductor-Extended Organic TFTs H M Dipu Kabir, Zubair Ahmed, Remashan Kariyadan, Lining Zhang, Mansun Chan The Hong Kong University of Science and Technology, Hong Kong

T6: High Speed Circuits August 4, Thursday (10:10 – 12:00) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.9 Scaling Challenges and Solutions beyond 10nm Srinivasa Banna (Invited)Globalfoundries, USA

10:40 - 11:00

T6.1 A 10GHz Analog Phase Interpolator Based on a Novel Quadrature Clock Generator Xiaoting Zhi, Weixin Gai, Liangxiao Tang, Linqi Shi Peking University, Beijing, China Peking University, Shenzhen, China Beida (Binhai) Information Research, Tianjin, China

11:00 - 11:20

T6.2 A Speculative Clock and Data Recovery Architecture for Multi-Gigabit/s Series Links Tong Zhao, Weixin Gai, Liangxiao Tang , Linqi Shi, Xing Zhang, Tong Zhao, Weixin Gai, Liangxiao Tang, Linqi Shi Peking University, Beijing, China Beida (Binhai) Information Research, Tianjin, China

11:20 - 11:40

T6.3 Design of 20-Gb/s Four-Level Pulse Amplitude Modulation VCSEL Driver in 90-nm CMOS Technology Jhe-Yue Li, Jau-Ji Jou, Tien-Tsorng Shih, Chien-Liang Chiu, and Jian-Chiun Liou National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan

11:40 - 12:00

T6.4 A 6.5-GHz Digitally-Controlled Oscillator with Supply Sensitivity of 0.0071%-fDCO/1%-VDD Jichao Huang, Weixin Gai, Liangxiao Tang, Linqi Shi, Tong Zhao, and Xing Zhang Peking University, Beijing, China Beida (Binhai) Information Research, Tianjin, China

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T7: Device Modeling and Simulation 1 August 4, Thursday (14:00 – 15:50) Venue: Room XXX Session Chair: TBA 14:00 - 14:30

Inv.10 Advanced Techniques in TCAD Simulation of GaN HEMT Simon Li, Gary Dolny, and Yue Fu (Invited)Crosslight Inc., Canada

14:30 - 14:50

T7.1 Linearity Performance of Gate Metal Engineered (GME) Omega Gate-Silicon Nanowire MOSFET: A TCAD Study Arshiya Vohra, Neha Gupta and Rishu Chaujar Delhi Technological University, India

14:50 - 15:10

T7.2 A New Quasi-3-D Subthreshold Behavior Model for Short-Channel Double-Fin Multi-Channel FETs (DFMcFETs) Te-Kuang Chiang National University of Kaohsiung, Kaohsiung, Taiwan

15:10 - 15:30

T7.3 Comparison of Ultra Low Power Junctionless and Inversion-Mode FinFETs With Compact Model Zebang Guo and Yan Wang Tsinghua University, Beijing, China

15:30 - 15:50

T7.4 Modeling of Threshold Voltage for Operating Point Using Industry Standard BSIM-IMG Model Pragya Kushwaha, Rahul Agarwal, Harshit Agarwal, Yogesh Singh Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen-Kai Lin, Huan-Lin Chang and Chenming Hu Indian Institute of Technology Kanpur, India University of California Berkeley, USA

T8: Device Physics and Reliability August 4, Thursday (14:00 – 15:30) Venue: Room XXX Session Chair: TBA 14:00 - 14:30

Inv.11 Low-frequency Noise Characterization and Its Applications for CMOS Technologies James Ma (Invited)ProPlus Design Solutions, USA

14:30 - 14:50

T8.1 Sneak-path Based Test for 3D Stacked One-Transistor-N-RRAM Array Qiang Zhang, Xiaole Cui, Xiaoyan Xu, Xin’an Wang, Zhi Ma, Shengming Zhou Peking University Shenzhen Graduate School, Shenzhen, China National Integrated Circuit Design Shenzhen Industrial Center, Shenzhen, China

14:50 - 15:10

T8.2 Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs Shucheng Gao, Chenyue Ma, and Xinnan Lin Peking University Shenzhen Graduate School, Shenzhen, China

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T9: Novel Device 1 August 4, Thursday (14:00 – 15:50) Venue: Room XXX Session Chair: TBA 14:00 - 14:30

Inv.12 Novel Electronic and Photonic Properties of Low-Symmetry Two-Dimensional Materials He Tian, Huan Zhao, Han Wang (Invited)University of Southern California, USA

14:30 - 14:50

T9.1 Quantum Correction in AlGaN/GaN Transistor Simulations Using Modified Local Density Approximation (MLDA) Hiu Yung Wong, Oleg Penzin, Nelson Braga and R. V. Mickevicius Synopsys, Inc., Mountain View, CA, USA

14:50 - 15:10

T9.2 Metamateral Enhanced Folded Waveguide Slow Wave Structure for Millimeter Wave Traveling Wave Tube Amplifier Jin Qin, Lei Zhang, and Liu Chao Tsinghua University, Beijing, China Tianjin New Power Source Ltd., Tianjin, China

15:10 - 15:30

T9.3 A De-Embedding Procedure Based on TRL Calibration Algorithm for Through-Silicon-Vias Ke Wu，Qing Ma, Zheyao Wang Tsinghua University, Beijing, China

15:30 - 15:50

T9.4 Modeling of Source/Drain Access Resistances and their Temperature Dependence in GaN HEMTs Sudip Ghosh, Sheikh Aamir Ahsan, Yogesh Singh Chauhan, and Sourabh Khandelwal Indian Institute of Technology Kanpur, India University of California Berkeley, USA

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T10: Memory Technology & Dielectrics August 4, Thursday (16:10 – 17:40) Venue: Room XXX Session Chair: TBA 16:10 - 16:40

Inv.13 A Sub-0.5V Charge Pump Circuit for Resistive RAM (ReRAM) Enabled Low Supply Voltage Nonvolatile Logics and Nonvolatile Processors Meng-Fan Chang, Shin-Jang Shen, Yi-Lun Lu, Yih-Shan Yang, Jui-Yu Hung, Che-Wei Wu, Yan-Bing Jhang, Weihow Chen, and Han-Wen Hu (Invited)National Tsing Hua University, Taiwan

16:40 - 17:00

T10.1 A Low Power Selector-less Crossbar Array with Complementary Resistive-Switching Memory Jang-Woo Ryu and Kee-Won Kwon Sungkyunkwan University, Suwon, Korea Samsung Electronics Co.,Ltd., Hwaseong, Korea

17:00 - 17:20

T10.2 Improved Electrical Properties of GaAs MOS Capacitor by Using HfLaON Passivation Layer L.N. Liu, H.W. Choi, P.T. Lai, and J.P. Xu The University of Hong Kong, Hong Kong Huazhong University of Science and Technology, Wuhan, China

17:20 - 17:40

T10.3 High Reliability Multi-Channel Output Voltage Switch For Multitime Programmable Memory in Standard CMOS Process Jiasong Wang, Jiancheng Li, Hongyi Wang, Cong Li, and Zhipeng Luo National University of Defense Technology, Changsha, China

T11: Nano-Electronics 2 August 4, Thursday (16:10 – 17:40) Venue: Room XXX Session Chair: TBA 16:10 - 16:40

Inv.14 Silicene: The Ultimate Atomic Scaling of Silicon Deji Akinwande (Invited)University of Texas at Austin, USA

16:40 - 17:10

Inv.15 Effects of Fin Width on Performance and Reliability for N- and P-type FinFETs Wen-Kuan Yeh, Wenqi Zhang, Hung Shih, and Yi-Lin Yang (Invited)National University of Kaohsiung, Taiwan National Pingtung University, Taiwan National Kaohsiung Normal University, Taiwan

17:10 - 17:30

T11.1 Improved Characteristics for OTFT with HfO2 Gate Dielectric by Using Chlorinated Indium Tin Oxide Gate Electrode W.M. Tang , M.G. Helander, M.T. Greiner, Z.H. Lu, and W.T. Ng The Hong Kong Polytechnic University, Hong Kong University of Toronto, Canada

T12: Data Converters 1 August 4, Thursday (16:10 – 17:40) Venue: Room XXX Session Chair: TBA

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16:10 - 16:40

Inv.16 Design Considerations for Power Efficient Continuous-time Delta-Sigma Converters Shanthi Pavan (Invited)Indian Institute of Technology Madras, India

16:40 - 17:00

T12.1 A Fast-Locking All-Digital Phased-Locked Loop with a 1 ps Resolution Time-to-Digital Converter Using Calibrated Time Amplifier and Interpolation Digitally-Controlled-Oscillator Hsing-Chien Chu, Yi-Hsiang Hua, and Chung-Chih Hung National Chiao Tung University, Taiwan

17:00 - 17:20

T12.2 A Low Power Switching Method with Variable Comparator Reference Voltage and Split Capacitor Array for SAR ADC Xiaoyong He, Junliang He, Min Cai, Zhaoxia Jing South China University of Technology, China

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August 5, 2016 (Friday)

F1: Data Converters 2 August 5, Friday (8:30 - 9:50) Venue: Room XXX Session Chair: TBA 8:30 - 8:50

F1.1 An 11b 40MS/s Charge Pump and Comparator Based Pipelined ADC with Variable Reset Voltages Daxiang Li, Xian Tang, Zhongyi Fu, Jiangpeng Wang, Basak Debajit, and Kong-Pang Pun The Chinese University of Hong Kong, Hong Kong Tsinghua University Shenzhen, China

8:50 - 9:10

F1.2 An Op-amp Free SAR-VCO Hybrid ADC with Second-Order Noise Shaping Yu Hou, Zhijie Chen, Masaya Miyahara, and Akira Matsuzawa Tokyo Institute of Technology, Japan

9:10 - 9:30

F1.3 A 12Bit 800MS/s time-interleaving pipeline ADC in 65nm CMOS Meng Ni, Fule Li, Jia zhou, Zhijun Wang, Chun Zhang, Xian Tang and Zhihua Wang Tsinghua University, China

9:30 - 9:50

F1.4 Design and Implement of Baseband Circuits for a Wireless Automatic Meter Reading Application Guanghua Wu, Hong Chen, Yanyi Meng, Xitian Longy, Kun Yangy, Xueping Jiangy Tsinghua University, Beijing, China State Grid Smart Grid Research Institute, State Grid Corporation of China, Beijing, China

F2: Analog 2 August 5, Friday (8:30 - 9:50) Venue: Room XXX Session Chair: TBA 8:30 - 8:50

F2.1 A Current Detecting Circuit for Linear-mode InGaAs APD Arrays Zheng Lixia, Weng Ziqing, Wu Jin, Zhu Tianyou, Wang Meiya and Sun Weifeng Southeast University, Wu-xi, China Southeast University, Nanjing, China

8:50 - 9:10

F2.2 Cross-Coupled Gm-Boosting Technique for Two-Stage Miller-Compensated Amplifier Ming Wai Lau, Cheuk Ho Hung, Ka Nang Leung, and Wang Ling Goh The Chinese University of Hong Kong, Hong Kong Nanyang Technological University, Singapore

9:10 - 9:30

F2.3 Chip Design of Low-Power and Dual-Band Voltage Control Oscillator Wen-Cheng Lai, Sheng-Lyang Jang and Yu-Cheng Chuang National Taiwan University of Science and Technology, Taiwan

9:30 - 9:50

F2.4 Design of High-PSRR Current-Mode Bandgap Reference with Improved Frequency Compensation Lidan Wang, Chenchang Zhan, Shuangxing Zhao, Guigang Cai, Yang Liu, Qiwei Huang and Guofeng Li Southern University of Science and Technology, Shenzhen, China Nankai University, Tianjin, China Sogang University, Seoul, Korea

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F3: HV and Power Devices 2 August 5, Friday (8:30 - 9:50) Venue: Room XXX Session Chair: TBA 8:30 - 8:50

F3.1 Implantation-Free 2-Step Junction Termination Extension with 2-Space Modulated Buffer Trench Regions for UHV 4H-SiC GTO Cai-Neng Zhou, Yan Wang, Gang Dai, Jun-Tao Li Tsinghua University, Beijing, China Microsystem and Terahertz Research Center/China Academy of Engineering Physics, Mianyang, China

8:50 - 9:10

F3.2 Etched Junction Termination Extension with Floating Guard Rings and Middle Rings for Ultrahigh-Voltage 4H-SiC PiN Diodes Xiao Zou, Ruifeng Yue, Yan Wang Tsinghua University, Beijing, China

9:10 - 9:30

F3.3 Enhancement-Mode AlGaN/GaN MOS-HEMT on Silicon With Ultrathin Barrier and Diluted KOH Passivation Li-Cheng Chang, Tzung-Han Tsai, Yi-Hong Jiang, and Chao-Hsin Wu National Taiwan University, Taipei, Taiwan

9:30 - 9:50

F3.4 Modeling of Kink-Effect in RF Behaviour of GaN HEMTs using ASM-HEMT Model Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwaly and Yogesh Singh Chauhan Indian Institute of Technology Kanpur, India University of California, Berkeley, USA

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F4: Device Modeling and Simulation 2 August 5, Friday (10:10 – 12:00) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.17 Material Characterization and Device Simulation of GeSn Alloys for Field-EffectTransistors Applications Renrong Liang, Lei Liu, Jing Wang, and Jun Xu (Invited)Tsinghua University, China

10:40 - 11:00

F4.1 Numerical Simulations of Nonlinear Current-Voltage Characteristics of Nano-Channels: A Benchmark Study Lingzi Guo, Xin Zhu, Xingye Zhang, Zhi Ye, Yang Liu Zhejiang University, Hangzhou, China

11:00 - 11:20

F4.2 Modeling Current Reduction for PCM Cell with Thermal Buffer Layer Yihan Chen, Mansun Chan, Xinnan Lin, and Zhitong Song The Hong Kong University of Science and Technology, Hong Kong Peking University, Shenzhen, China Shanghai Institute of Microsystem and Information Techechnolgy, China

11:20 - 11:40

F4.3 Modeling of GeOI and Validation with Ge-CMOS Inverter Circuit using BSIM-IMG Industry Standard Model Harshit Agarwal, Pragya Kushwaha, Yogesh S. Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen-Kai Lin, Huan-Lin Chang, Chenming Hu, Heng Wu and Peide D. Ye Indian Institute of Technology Kanpur, India University of California Berkeley, USA Purdue University, USA

11:40 - 12:00

F4.4 Predictive Effective Mobility Model for FDSOI Transistors using Technology Parameters Pragya Kushwaha, Harshit Agarwal, Yogesh S. Chauhan, Mandar Bhoir, Nihar R. Mohapatra, Sourabh Khandelwal, Juan P. Duarte, Yen-Kai Lin, Huan-Lin Chang and Chenming Hu Indian Institute of Technology Kanpur, India Indian Institute of Technology Gandhinagar, India University of California Berkeley, USA

F5: Sensors, Imagers and MEMS 2 August 5, Friday (10:10 – 12:00) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.18 Highly Sensitive and Functional Photodetectors based on Silicon-On-Insulator Hiroshi Inokawa (Invited)Shizuoka University, Japan

10:40 - 11:00

F5.1 3D Stacked Image Sensor with Simultaneous Global Shutter and Rolling Shutter Readout Operation Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro Takazawa, Hideki Kato, Shunsuke Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi, Seisuke Matsuda, and Yoshitaka Tadaki Olympus Corporation R&D Division, Hachioji, Tokyo, Japan

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11:00 - 11:20

F5.2 Bidirectional Multi-Level Spatial Coded Exposure CMOS Capacitance TIA Pixel Design Yi Luo, Shahriar Mirabbasi, and Derek Ho University of British Columbia, Canada City University of Hong Kong, Hong Kong

11:20 - 11:40

F5.3 MoO3 Nanoplatelets based Schottky Diode for Low-Noise Sensors in Harsh Environments Tianding Chen, Weiting Kuo, Jerry Yu, Derek Ho City University of Hong Kong, Hong Kong

11:40 - 12:00

F5.4 Hydrogen Sensor Based on Pentacene Thin-Film Transistor Bochang Li, P. T. Lai, and Wing Man Tang The University of Hong Kong, Hong Kong The Hong Kong Polytechnic University, Hong Kong

F6: Power Management ICs August 5, Friday (10:10 – 12:10) Venue: Room XXX Session Chair: TBA 10:10 - 10:40

Inv.19 A New Generation 3D Printed On-Chip Energy Storage Devices Hui Ying Yang (Invited)Singapore University of Technology and Design, Singapore

10:40 - 11:00

F6.1 A CMOS High Frequency Pulse Width Modulation Integrated Circuit Osman Ulas Sahin, and Fatih Kocer ASELSAN, Inc., Turkey Middle East Technical University, Turkey

11:00 - 11:20

F6.2 A 0.048ns/°C Delay Generator With Variation Self-Calibration Structure(VSCS) for HVIC Yangyang Lu, Yuming Wang, Kuo Yu, Long Miao, Jing Zhu, Weifeng Sun Southeast University, Nanjing, China

11:20 - 11:40

F6.3 A Compact Fast-Transient Charge-Pump Boost Converter Using Hysteretic Compensated Techniques Yuh-Shyan Hwang, Rong-Lian Shih and Jiann-Jong Chen, Yi-Tsen Ku, and Cheng-Chieh Yu National Taipei University of Technology, Taiwan

11:40 - 12:00

F6.4 A High-Efficient and Wide-Bandwidth Supply Modulator Using Power Switch Controlled Technique Tai-Wei Ke, Yuh-Shyan Hwang, and Jiann-Jong Chen, Yi-Tsen Ku, and Cheng-Chieh Yu National Taipei University of Technology, Taiwan

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Poster Session August 4, Thursday (15:50 - 17:40) Venue: Room XXX Session Chairs: TBA

P1. Barrier Height Modulation by Surface Morphology Control in Nanoclustered ZnO Schottky Diodes for Sensor Applications Yuet Ching Chan, Jerry Yu, and Derek Ho City University of Hong Kong, Hong Kong

P2. UV-Excited TiO2 Nanotube Formaldehyde Sensor for Room Temperature Operation Kwai Yin Chau, Kwong Man Wai, Jerry Yu, Jiaqi Chen, Amine Bermak, and Derek Ho City University of Hong Kong, Hong Kong The Hong Kong University of Science and Technology Hamad Bin Khalifa University, Qatar

P3. A 4.95mW 114dB SNDR Delta-Sigma Modulator Based on SC circuits for Audio Chip Hengdi Wu, Menglian Zhao†, Xiaolin Yang, Xiaobo Wu, Su Hanyang Zhejiang University, Hangzhou, China

P4. Mobility Variation and Threshold Voltage Shift Immunized Amorphous-Indium–Gallium–Zinc-Oxide Pixel Circuit Zhiqiang Liao, Hesheng Lin, Binjie Liu, Min Zhang Peking University, Shenzhen, China Shenzhen Thin Film Transistor and Advanced Display Lab, Shenzhen, China

P5. Adjustable Duty Cycle ASK Demodulator for Passive UHF RFID Tags Yi Miao, Jiancheng Li, Hongyi Wang Lei Cai, Yu Xiao, Li Yang, Miaoxia Zheng National University of Defense Technology, Changsha, China Xiangtan University, Xiangtan, China

P6. A 16-channel 12-bit Rail-to-Rail Successive Approxmation Register ADC for AFEs Yifan Jiang, Jianxiong Xi, Lenian He, Kexu Sun Zhejiang University, Hangzhou, China Southern Methodist University, Dallas, USA

P7. A Floating High-Voltage Level Shifter Used in a Pre-charge Circuit for Large-size AMOLED Displays Fangfang Yang, Cuicui Wang, Hing-Mo Lam, Qiang Zhao, Jia Fan, Shengdong Zhang Peking University, Shenzhen, China Peking University, Beijing, China

P8. An Asynchronous GFSK Demodulator for Automatic Meter Reading Yuxuan Liu, Guanghua Wu, Hong Chen, Anping He Tsinghua University at Beijing, China Lanzhou University, Lanzhou City, China

P9. Analysis of Multi-Measurement Techniques for High-Linearity Tapped Delay Line FPGA Time-to-Digital Converters Nan Guo and Derek Ho City University of Hong Kong, Hong Kong

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P10. A Low-Power Third-Order ΔΣ modulator Using Ring Amplifiers with Power-Saving Technique Alexis Gryta, Takuma Suguro, and Hiroki Ishikuro Keio University, Yokohama, Japan

P11. A 0.6V Standard Cell Library in 40nm CMOS for Near-threshold Computing Jintao Li, Bo Pang, Ming Liu, Hong Chen, Zhihua Wang Tsinghua University, Beijing, China Chinese Academy of Sciences Beijing, China

P12. A 0.32µW Physically Unclonable Fuction with BER < 1.18×10-5 Using Current Starved Inverters Yinxuan Lyu, Jianhua Feng, Hongfei Ye, Chunhua He and Dunshan Yu Peking University, Beijing, China Beida(Binhai) Information Research, Tianjin, China No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

P13. The Research of X-band GaAs SPDT Switch on Si CMOS Lishu Wu, Yan Zhao, Hongchang Shen, Youtao Zhang and Tangsheng Chen Nanjing Electronic Devices Institute, Nanjing, China

P14. Adjustable Lumped Impedance Mismatching Compensation Circuit Xiaomeng Zhang and Saiyu Ren Wright State University, Dayton, Ohio, USA

P15. 2.4GHz 20Mb/s FSK Receiver Front-End and Transmitter Modulation PLL Design for Energy-Efficient Short-Range Communicaiton Ranran Zhou, Yining Zhang, Woogeun Rhee, and Zhihua Wang Tsinghua University, Beijing, China

P16. An Optimized CMOS Series-Parallel Coupled LC Quadrature Phase Oscillator Sivaramakrishna Rudrapati, Sumit Emekar, Shalabh Gupta Indian Institute of Technology Bombay, Mumbai, India

P17. Design of Novel Digital GFSK Modulation and Demodulation System for Short-range Wireless Communication Application Xitian Long, Xueping Jiang, Zhe Zheng, Guanghua Wu, Yanyi Meng, Hong Chen State Grid Corporation, Beijing, China Tsinghua University, Beijing, China

P18. Improved Reliability of High-Voltage VDMOS with Reduced Mask Layers Through Optimized Edge Termination Jen-HaoYeh, Yi-Rong Tu, Wan-Wen Tseng, Ming-Nan Chuaug, Pi-Feng Cheng, Chiung-Feng Chou, Chih-Fang Huang Leadtrend Technology Corporation, Hsinchu, Taiwan National Tsing Hua University, Hsinchu, Taiwan

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P19. Performance Metrics of Metal Oxide and Metal Sulfide Nanostructures for Hydrogen Sensors Jerry Yu, Ling Xi Liu, Derek Ho City University of Hong Kong, Hong Kong

P20. Model of TCSPC Fluorescence Lifetime Analysis Microsystem using Monte Carlo Methods Liping Wei, Wenrong Yan, Yi Tian, and Derek Ho City University of Hong Kong, Hong Kong

P21. Simple leakage Current and 1=f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors Hongyu He, Wanling Deng, Yuan Liu, Xinnan Lin, Xueren Zheng, and Shengdong Zhang University of South China, Hengyang, China Peking University Shenzhen Graduate School, Shenzhen, China Jinan University, Guangzhou, China China Electronic Produce Reliability and Environmental Testing Research Institute, Guangzhou, China China University of Technology, Guangzhou, Chin

P22. A Vision Chip Architecture for Image Recognition Based on Improved Convolutional Neural Network Jijia Guo, Jipan Huang, Xin’an Wang, Haifang Lu Peking University Shenzhen Graduate School, Shenzhen, China

P23. An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling Based on Artificial Neural Networks Zhiyuan Zhang, Xinnan Lin, Xiaole Cui, Lining Zhang Peking University, Shenzhen Graduate School, Shenzhen, China Hong Kong University of Science and Technology, Hong Kong

P24. The Effects of O2 Annealing on the Characteristics of IGMO-based UV Photodetector Y.Y. Zhang, L.X. Qian, Z.H. Wu and X.Z. Liu University of Electronic Science and Technology of China, Chengdu, China

P25. Thermal Resistance Extraction of InP/InGaAs DHBT by Pulse and CW Measurement Bin Niu, Junling Xie, Wei Cheng, Yuan Wang, Long Chang, Yan Sun, Huaixin Guo Nanjing Electronic Devices Institute, Nanjing, China

P26. Analysis of Factors in Phase Array Antenna and RF Units on System Performance of the OFDM PHY Of IEEE 802.11ad Standard Jin Qin, Lei Zhang, Li Zhang and Yan Wang Tsinghua University, Beijing, China

P27. A 14-bit Column-Parallel Two-Step SA ADC with On-Chip Scaled Reference Voltages Self-Calibration for CMOS Image Sensor Jingyuan Chen, Jianxiong Xi, Lenian He, Kexu Sun, and Ning Xie Zhejiang University, Hangzhou, China Southern Methodist University, Dallas, Texas, USA Chinese Academy of Sciences, Shanghai, China

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P28. Tube Size Effect of Anodized Alumnium Oxide(AAO) Template Based Gas Sensor Huayu Hu, Zhipeng Kang, Xiaojin Zhao, Xiaofang Pan Shenzhen University, Shenzhen, China

P29. Glove-Based Hand Gesture Recognition Sign Language Translater using Capacitive Touch Sensor Kalpattu S. Abhishek, Lee Chun Fai Qubeley, and Derek Ho City University of Hong Kong, Hong Kong

P30. Improved Hydrogen-Sensing Performance of Pd/ WO3/SiC Schottky Ddiode by La Doping Y. Liu, P. T. Lai, and W.M. Tang The University of Hong Kong, Hong Kong The Hong Kong Polytechnic University, Hong Kong