2004/12/13

進 度 報 告宋育泰

Hall Bar

1.Clean TCEACEMethylDI-Water ……repeat2.Coating AZ6112 Step1: 5500 (r.p.m.) 1 (sec) Step2: ---- (r.p.m.) -- (sec)3.Baking 80 ( ) 180 (sec)℃ 4. 曝光 180 (sec) MASK: Omhic contact5. 顯影 Developer:AZ3006. 蒸鍍 1.Au--10(nm)--2.0~4.0(A/sec) 2.AuGe--20(nm)—2.0~4.0(A/sec)

製 程

3.Au--20(nm)--3.0~4.0(A/sec) 4.AuGe--20(nm)--2.0~4.0(A/sec) 5.Au--120(nm)--3.0~4.0(A/sec)7.Left-off8. 燒結 430 ( ) 15(min) ℃ 通 N2

9.Coating AZ6112 -- 氣槍10.Baking 80 ( ) 120 (sec)℃ 11. 曝光 120(sec) MASK:MESA12.Repeat (5.)13. 蝕刻 8(sec) around 0.8(nm) H2SO4:H2O2:H2O=1:8:80

Wafer: 2.5*3 mm C015A

material Thickness(Ǻ) doping

GaAs-cap 100 Si 4 x 1018

Al0.28Ga0.72As 643 Si 7.5 x 1017

Al0.28Ga0.72As 187 -----------

GaAs-buffer 10000 -----------

Sub : GaAs-S.I ----------- -----------

C015A 結 構

Result

1

2

4

5

6

7

3- 基板 Ground

At 11.5 K

n = 2.34x1011 cm-2

μ = 1.02x105 cm-2/Vs

(Measured by DC conductivity and hall effect

Length/Width=1.82)