15 kv sem -eds e-beam 10 kv auger e-beam xps electrons 20 µ

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15 kV SEMEDS ebeam 1 μ 0.5 μ 15 kV electrons travel ~1 μ into sample 5kV electrons travel ~0.5 μ into sample EDS Xrays EDS Xrays 10 kV Auger ebeam 5 kV SEMEDS ebeam Vacuum Sample XPS electrons 20 μ wide XPS Xray Beam surface nearsurface bulk Auger electrons Aluminum Xrays (1.5 kV) travel ~3 μ into sample 16 nm 112 nm 1 μ 1,000 nm 0.1 μ 100 nm 0.01 μ 10 nm EDS Xrays B. Vincent Crist © 2012 Insulator Survey* Atom% Chemical States Insulators Info Depth (Z) Smallest XY Size Damage during analysis Auger 1018 min +/20% some possible, takes time 16 nm 20 nm (0.02 um) Possible (10 kV electrons) EDS (SEM) 1117 min +/10% none possible (20 nm Au) >500 nm 800 nm (0.80 um) Possible (525 kV electrons) XPS 815 min +/10% many Easy 112 nm 30,000 (30.0 um) Rare (1.5 kV Xrays) ASK Customer: Z size ? (depth/height of defect), XY size ? (planar size of defect), insulator or conductor ?, need chemical states ? *Time needed to cut sample, (gold coat 4 SEM = 5 min), mount, pump down, locate defect, setup, collect, analyze, remove sample www.nanolab1.com 1708 McCarthy Rd Milpitas, CA Tel 1-408-433-3320

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Page 1: 15 kV SEM -EDS e-beam 10 kV Auger e-beam XPS electrons 20 µ

15 kV 

SEM‐EDS

 e‐

beam

1 μ

0.5 μ

15 kV

electron

s travel 

~1 μ 

into 

sample

5kV

electron

s travel 

~0.5 μ

into 

sample

EDS  X‐rays

EDS  X‐rays

10 kV 

Auger

e‐be

am

5 kV

 SEM‐EDS

 e‐

beam

Vacuum

Sample

XPS 

electron

s

20 μ wide XP

S  X‐ray Beam

surface

near‐surface

bulk

Auger 

electron

s

Alum

inum

 X‐rays (1

.5 kV) 

travel 

~3 μ 

into sam

ple

1‐6 nm

1‐12

 nm

1 μ

1,000 nm

0.1 μ   100

 nm

0.01

 μ   10

 nm

4 μ

4,000 nm

EDS 

X‐rays

B. Vincent Crist ©

 2012

Insulator S

urvey*

Atom

%Ch

emical States

Insulators

Info Dep

th (Z)

Smallest XY Size

Dam

age du

ring an

alysis

Auger

10‐18 min

+/‐20%

some

possible, takes time

1‐6 nm

20 nm  (0.02

 um)

Possible (1

0 kV

 electrons)

EDS (SEM

)11

‐17 min

+/‐10%

none

possible  (20

 nm Au)

>500

 nm

800 nm

  (0.80

 um)

Possible (5

‐25 kV

 electrons)

XPS

8‐15

 min

+/‐10%

man

yEasy

1‐12

 nm 

30,000

  (30

.0 um)

Rare  (1.5 kV

 X‐rays)

ASK Cu

stom

er:   Z size ? (d

epth/height o

f defect),    XY size ? (p

lana

r size of defect),      insulator o

r con

ductor ?,     ne

edchem

ical states ?  

*Tim

e ne

eded

 to cut sa

mple, (gold coat 4 SEM

 = 5 m

in), mou

nt, pum

p do

wn, locate defect, setup, collect, analyze, rem

ove sample

ww

w.n

anol

ab1.

com

1708

McC

arth

y R

dM

ilpita

s, C

ATe

l 1-4

08-4

33-3

320