10 mike brinson

7/23/2019 10 Mike Brinson

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QucsStudio: A second generation Qucs software package forcompact semiconductor device model development based

on interactive and compiled equation-defined modelling techniquesplus circuit simulation

Presented at the COMON 2ndInternational Training Course on Compact Modelling, June 28-29, 2!2Tarragona, "pain

!

Introduction# scope o$ presentation and %ac&ground

'undamentals o$ e(uation de$ined modelling

)uantit* modelling

+erilog- code $or e(uation-de$ined models

n npn phototransistor model

Template deice modelling

step-recoer* diode model

Curtice .' M/"'/T model

"ummar* and re$erences

M0 /0 1rinsonCentre $or Communications Technolog*ondon Metropolitan 3niersit*

ondon N4851, 36m%rin427*ahoo0co0u&
mailto:[email protected]:[email protected]


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2

Introduction: Scope of presentationand background

The primary purpose of this presentation is to introduce the fundamentalsof equation-defined device modelling and there application in compactsemiconductor device development

Starting with the SI!" circuit simulator as a reference point both interpretiveand compiled code for compact device models are introduced

Throughout the presentation a series of compact semiconductor modellingcase studies are discussed to demonstrate equation-defined model constructiontechniques

articular emphasis is given to #erilog-A compact model development

The Qucs and QucsStudio open source circuit simulators are employed in mostof the demonstration case studies when simulating model performance


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Introduction : Qucs development roadmap

5ate .elease Notes :;ighlights 009 NeA $unctions in e(uation soler0 ;armonic 1alance simulation introduced0 Man*

neA components added0"ept0 2> 00! )ucs conerter tool improed0 "upport $or nine-alued +;5 logic0 Circuit optimiBation

introduced using "CO0 dded attenuator design tool0Mar0 24 00!! dded deice parameters to e(uations and parameters to su%circuits0 NeA models plus

improements to e?isting models0 3sing 5M" to translate +erilog- deice models $oruse in )ucs0

Jun0 24 00!2 ots o$ neA components, %ug $i?es and small improements0 dded support $or +erilogusing Icarus +erilog0 "upport $or s*m%olicall* e(uation-de$ined deices /55D0 /?plicit

e(uations alloAed0No0 24 00! Eeneral improements plus implementation o$ immediate ectors and matrices in e(uations0pr0 28 00!7 Implemented multi-port e(uation-de$ined .' deice .'/55D ", F and G parameters

aaila%le0 TAo-port e(uation-de$ined deice also supported0pr0 29 00!= Mainl* %ug $i?es, small improements and the addition o$ neA models0Mar0 2!! 00!> Implemented interactie post simulation data processing using Octae0 gain man* %ug

$i?es, small improements and the addition o$ neA models0


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7

Introduction : QucsStudio development roadmap

5ate .elease Notes :;ighlights and $=N/TI"T

)ucs"chematic diagram


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>

!onstants: i . pi e k/ q &umber suffi0es: " T 1 2 k m u n p f aImmediate: +)3 ()45.3)( 6( 7 4 3 89 6(( (+* +( ++9 2atrices: 2 26+79 26:79

%anges: ,o:i :i ,o: : Arithmetic operators: 50 -0 05y 0-y 0'y 0;y 00 0??y 0@@y 0==y 0y:B 0CCy 0>Cy 0Dy 0DCy0Ey 0ECy

$ata processing Tables and plots

imitations# NO user de$ined $unctions or control loops

Introduction: Qucs post-simulation 2AT,A/';Fctave'' data processing features

"quation blocks 5 simulation data sets

abs ad.oint angle arccos arccosec arccot arcosech arcosh arcoth arcsec arcsin arctan arg arsech arsinh artanhavg besseliG bessel. bessely ceil con. cos cosec cosech cosh cot coth cumavg cumprod cumsum d/ dbm dbm+wdeg+rad det dft diff erf erfc erfcinv erfinv e0p eye fft fi0 floor Hreq+Time 1a!ircle 1p!ircle hypot idft ifft imagintegrate interpolate inverse kbd lime0p linspace ln log(G log+ logspace mag ma0 min 2u 2u+ &oise!ircle normphase lot#s polar prod rad+deg random real rms %ollet round rtoswr rtoy rtoB runavg sec sech sign sin sinc sinhsqr sqrt srandom Stab!ircle, Stab!ircleS StabHactor Stab2easure stddev step stos stoy stoB sum tan tanh

Time+Hreq transpose twoport unwrap variance vt w+dbm 0value ytor ytos ytoB yvalue Btor Btos Btoy

' 2AT,A/ 2athworks http:;;www)mathworks)com;'' Fctave http:;;www)gnu)org;software;octave;
http://www.mathworks.com/http://www.mathworks.com/http://www.gnu.org/software/octave/http://www.gnu.org/software/octave/http://www.mathworks.com/


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Introduction: SI!"; Qucs modelling tools subcircuitswith parameters

4

"mitter followersubcircuit

#oltage gain Input resistance

Futput resistance


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Introduction: SI!";Qucs modelling tools macromodels withparameters

8

!losed loopamplifier

with 0(G gain

2acromodel body 2acromodel symbol

Three F A2 state variable filter

VBP= j f/ f01 f/ f

02j /Q f/ f

0

f0=1

2R3

C1

=1

2R4

C3

Q=1

31

R6

R7

Single pole F A2 macromodelspecification:+o$$ L Input o$$set oltage.d L di$$erential input resistanceCd L di$$erential input capacitance

O5C L 5C open loop di$$erential oltage gainE1P L Eain %andAidth product+limit L output oltage saturation limit.o L Output resistance


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9

Fundamentals of equation-defined device modelling

The QucsStudio circuit simulator provides a mature mix of simulation andanalysis routines which are launched from a graphical environmentspecifically designed for schematic drawing, netlist entry, and simulation control

+Compact device modelling and circuit macromodelling tools

A convenient, interactive and powerful modelling system forbuilding and testing multidomain simulation models in the

following categories

!and craftedC++ models "onlinear e#uation defined

device $%&&' models(adio fre#uency e#uationdefined device $()%&&' models

Component based

subcircuit models

Component based

circuit macromodels

*erilogA compact device models *erilogA circuit

macromodels


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Equation based compact model and circuit macromodel construction

-odel e#uations representingphysical operationof device . circuit

/enerate e#uationdefined models from physical e#uations

0nteractive testing

&isplayresults

-odify modelAdd new featuresby extending model e#uation set

*erilogA

codegeneration

Compile *erilogA code to C++ andlin1 model with main body of simulator code

)urther testing to confirm model performance

23

C!A"/%S "%%&%&

START

STOP


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Basic equation-defined device (E! modelling featuresThe Qucs %&& is a multiterminal nonlinear component with branch currents that can bea function of the branch voltages, and stored charge that can be a function of both branchvoltages and currents4

%&& is similar, but more advanced, to the 5 type controlled source implemented in S60C% 7f84%&& is capable of realiing the same models as the S60C% 5 device plus an extensive range

of more complex compact device models4%&& is an advanced component, allowing users to construct their own models from a set of

e#uations derived from physical device properties4EDD models can be combined with conventional circuit components to form compact device

subcircuit models.An EDD is a non-linear component with up to eight two terminal branches.Each branch is characterized by current I

n, voltage Vnand charge Qn, where 1


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=

Equation-defined device model for a semiconductor diode "Part # $ c%aracteristics

%&& diode current 0d is the sum of branch currents 0 to 0>,where 0 represents the forward bias region, 0= the reversebias region and 07 plus 0> the reverse brea1down region4

Id= fVd

Id=Isexp qVd/nkT1 VdGMIN

for5nkT

q Vd0

Id=IsVdGMIN forBVVd

5nkT

q

Id=BV for Vd=BV

Id=Isexp qVd/nkT1qBV/ kT for VdBV

E ti d fi d d i d l f i d t di d


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7

Equation-defined device model for a semiconductor diode "Part & capacitance

The next stage in the developmentof the %&& diode model is to addcapacitance effects< depletion layerand diffusion capacitance for thereverse and forward bias regionsof operation respectively4 )ig4 =illustrates the diode %&& modelwith these added via contributionsto the device charge4 The samesyntax to the S60C% diode modelhas been employed in thederivation of the %&& chargee#uations4 A device area factorhas also been added to the%&& model presented in )ig4 =4

Equation defined device model for a semiconductor diode "


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>

Equation-defined device model for a semiconductor diode "Part ' temperature effects

The %&& diode model illustrated in )ig4 7employs S60C% temperature parametersTnom and Temp to determine thetemperature dependencies of the modelparameters4 0n )ig4 7 only %&& diodeparameters 0s, *? and C? are defined asfunctions of temperature4 This was done

in this demonstration model because ofspace restrictions4 Comparison betweenthe Qucs builtin diode model and the%&& compact model shows goodagreement in the 0* &C characteristicsover a wide range of temperature4


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8

$ompact device subcircuits it% pac)age parasitic components "tunnel diode e*ample

)ig4 > shows a model for a p+ n+tunnel diode with series ( and @connection components plus diode

capacitance modelled by a parallelfixed value capacitor4 5y addingconventional components to %&&models compact device subcircuitscan be easily constructed for testingand performance evaluation4 )ig4 8illustrates a basic monostable pulse

generator derived from the %&&tunnel diode compact subcircuitmodel4

Quantity modelling: a support vehicle for compact device model construction


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Quantity modelling: a support vehicle for compact device model constructionand circuit macromodelling; Part 1 basic concepts

High quality models are an essential prerequisite for accurate circuit simulationof established and emerging technologies.

In contrast to hand-coded C, the Verilog-A hardare description language pro!ides ahighly e"pressi!e standardi#ed language hich embodies features for the automaticgeneration of partial deri!ati!es.

$nce ritten, Verilog-A model descriptions are normally compiled to C or C%% code,and lin&ed to the main code of circuit simulator.

'raditional macromodeling adopts a different approach here a subcircuit is used to represent model connecti!ity. 'he body of the subcircuit being assembled from predefined components and user defined subcircuits, hose parameters are normally numerical quantities rather than non-linear algebraic equations.

(acromodeling supports both functional modelling and interacti!e testing ithout the need for code compilation and lin&ing.

The next few slides present a unified modelling approach for constructing of compactsemiconductor device models and circuit macromodels which retains the best featuresof interactive subcircuit macromodeling while promoting a straight forward procedurefor the generation of high performance Verilog- model code! The presented techni"ue

is called Q#$T%T& modelling!



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1)

Quantity modelling: a support vehicle for compact device model constructionnd circuit macromodelling; Part ' basic concepts continued

In *a+ current Inameis a non-linear function of the !oltages applied to the terminalsconnected to branches to to eight. $'/ branches ith current set at #ero act ashigh impedance !oltage probes.

In *b+ charge Q1represents the stored charge in branch 1. Changes in Q1o!er a period of time result in a change in the current floing in branch one.

'he listed Verilog-A code fragments clearly identify the strong relationship beteen the equation defined quantity bloc& structure and the corresponding Verilog-A code.

'he abo!e structures represent the simplest quantity elements. $ther combinations ith different numbers of current or charge equations and !oltage probes are possible.



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Quantity modelling: a support vehicle for compact device model constructionnd circuit macromodelling; Part ( basic concepts continued

10

)"uivalence between

Qucs*Qucs+tudiostandard componentsand Verilog- codebloc,s!



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Quantity modelling: a support vehicle for compact device model constructionand circuit macromodelling; Part basic concepts continued

1

2ucs32ucs4tudio use a

noise !oltage generatorof the form gi!en by thefolloing equation togenerate noise signals/

VPSD f= U

acf e,

5here VPSD(f)is the !oltagespectral noise density at frequencyfin

V2/Hz, Uis the !oltage spectral density

as f goes to #ero H#,a,cand earecoefficients that determine the type ofnoise generated/

5hite and shot noise/ U=1,e7,c1 and a7.

8lic&er noise/ U=9f,e8fe,c1 and a7.

.enerating Verilog- code from Qucs*Qucstudio e"uation-defined "uantity


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:7

.enerating Verilog code from Qucs*Qucstudio e"uation defined "uantitymodels: Part 1 the three stage process

Although the current and charge bloc&s shon in the pre!ious slide are presented as separate items the 2ucs32ucs4tudio equation-defined quantity modelling technique

naturally proceeds in a top-don fashion rather than the con!entional bottom-up design

process.'he folloing diagram illustrates the three principle stages in the construction of a

2ucs32ucs4tudio equation-defined quantity model.

%n Q#$T%T& modelling variables specified by e"uationsare represented /and calculated0 as model currents and converted to

voltages for input into other ) bloc,s or controlled sources!

.enerating Verilog- code from Qucs*Qucstudio e"uation-defined "uantity


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.enerating Verilog- code from Qucs*Qucstudio e"uation-defined "uantitymodels: Part ' more details

:1

4tarting ith a set of equations that characteri#e the physical properties of a de!ice, or the functionality of a circuit, a subcircuit schematic symbol is dran ith signal connection pins and a default parameter list attached.

'he ne"t step in the model de!elopment sequence in!ol!es draing a second schematic composed of current and charge equation-defined bloc&s hich represent the body

of a model, including currents, charges, resistance, !oltage controlled currents, current to!oltage con!ersion bloc&s and noise generators.

Interacti!e testing of the model follos, alloing a full e!aluation of a model function.

$n satisfactory completion of the testing phase the Verilog-A code for a 2ucsequation-defined quantity model is generated by inspection of the model symbol and the

body schematic, simultaneously entering the Verilog-A code for each item in the !arioussections indicated as comments in the Verilog-A template shon on the pre!ious slide.

Generating Verilog-A code from Qucs/Qucstudio equation-defined quantity


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Generating Verilog A code from Qucs/Qucstudio equation defined quantityModels: A long channel EKV v2! com"act device model

The list on this slide gives the fundamental DC and charge equations for a simplified long channel EPFL-EKV n!" model# $here# VP is the pinch-off voltage# n is the slope factor# %ET& is a transconductance parameter# 'specific is the specific current# 'f is the for(ard current# 'r is the reverse current and 'ds is the

drain to source current)

The parameters for the long channel model are* VT! the theshold voltage# P+' the ,ul Fermi potential# .&& the ,od/ effect parameter# $ the channel (idth# L the channel length# C!0 the gate o1ide capacitance per unit area and vt is the thermal voltage at the device temperature)

EPFL-EKV v2) equation num,ers aregiven in 3 4 ,racets at the left-hand

side of each equation)

Generating Verilog-A code from Qucs/Qucstudio equation-defined quantityModels: A long channel EKV v2 ! com"act device model


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Models: A long channel EKV v2! com"act device model

25

The schematic presented on this slide demonstrates ho( device equations are represented ,/ a set of 6ucs EDD structures (here each of ph/sical quantit/ is

calculated as a ,ranch current)

Currents output from an EDD# and passed as input to

other EDD# are converted to voltages ,/ setting individual input ,ranch currents to ,e identical in value to their ,ranch voltage using

In=V

n

$here su,script n is the EDD ,ranch num,er in therange 7 to 8)

Qucs E## model for a long channel nM$%transistor

Generating Verilog A code from Qucs/Qucstudio equation defined quantity


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Generating Verilog-A code from Qucs/Qucstudio equation-defined quantityModels: A long channel EKV v2! com"act device model

Qucs charge "artition model for a long channelnM$% transistor

The d/namic charge properties of the simplified EPFL-EKV n!" transistor model are determined ,/ device parameter 0part# (hich allo(s users to set the device charge partition ratio)

The default value of 0part is :)9 (hich gives aratio of 9:;: for 6D;6"


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2@

// Qucs E&'-EKV 2! nM$% long channel model: EKV2!nM$%'(va// (harge "artition )"art/%"art*include +disci"linesvams+*include +constantsvams+//

module EKV2!nM$%'( ,#rain Gate %ource .ul01

inout #rain Gate %ource .ul1electrical #rain Gate %ource .ul1*define attr,tt0 ,3tt30// #evice dimension "arameters"arameter real ' 4 2e-! from 566 : inf0 *attr,info4+length "arameter+ unit 4 +m+ 01"arameter real 7 4 2e-! from 566 : inf0 *attr,info4+7idth "arameter+ unit 4 +m+01// .asic intrinsic model "arameters"arameter real V8$ 4 6! from 59e-! : 260 *attr,info4+long channel threshold voltage+ unit4+V+ 01"arameter real GAMMA 4 69 from 566 : 260 *attr,info4+;ody effect "arameter+ unit4+V33,9/20+01"arameter real & from 56? : 26@ *attr,info4+;ul ermi "otential+ unit4+V+01"arameter real K& 4 9B6e-! from 596e-! : inf0 *attr,info4+transconductance "arameter+ unit 4 +A/V332+01"arameter real 8


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2

analog ;egin,initialFmodel0 ;egin

&9 4 -V8$&


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'ong channel E&' EKV M$% transistor #( characteristics

2A

'ong-channel E&'-EKV M$% ca"acitor characteristic


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'ong channel E&' EKV M$% ca"acitor characteristic

28

Generating Verilog-A code: Qucs equation defined devices via Verilog-A code fragments


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2B

to a Verilog-A standardised tem"late

odel s/m,olpin names

Equation-defined devicemodel

Verilog-&code

fragments

7) Compile Verilog-& template code (ith &D"2) &dd ne( model to 6ucs ,/ patching C>> code5) &dd ne( model s/m,ol to 6ucs C>> code9) Compile and lin 6ucs staticC>> code to generate a ne( version of 6ucs

//Verilog-A model tem"late*include disci"linesvamsN*include constantsvamsNmodule name ,&9 &2 &? &n01inout &9 &2 &? &n1electrical &9 &2 &? &n1

// #efinition of local internal nodes// &arameter values and descri"tions// #efinition of internal varia;lesanalog ;egin

// =nitialisation code// Quantity equations// (urrent contri;utions

// oise contri;utionsendendmodule

Qucs%tudio: (om"act semiconductor device and circuit macromodelconstruction using A#M% and MinG7 dynamically lined models


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5:

Compact"emiconductorDevice or circuit

macromodels

Compact"emiconductorDevice or circuit

macromodels

(om"act%emiconductordevice or circuit

"hysicalequations

Equation-defineddevice model

or circuitmacromodel

Verilog-Afragments

Verilog-Amodelcode

58em"latestructure@

( (om"iledmodel

(

&in9

**

&inn

&out9

&outn

%ym;ol

&in9

**

&inn

&out9

&outn

%u;circuitsym;ol

Generate Verilog-A codeLith the Qucs%tudio

colour highlighted tet editor

ile )))va

ile )))vac""

ile )))dll

8urn-KeyN Verilog-A com"act model develo"ment system 7


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Schematic symbol, default parameter list and equivalentcircuit of an npn bipolar phototransistor

The phototransistor modelis constructed from anEbers-Moll bipolar junctiontransistor model which

has been extended toinclude depletion anddiffusion capacitance,forward and reverse Earlyeffects, high currentforward and reverse betadegradation,thermal and

shot noise, plus a lightbus which connectsexternal light signalsto the phototransistor.

Light bus

!

Building a compact semiconductor model of an npn bipolar phototransistor


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"

#ame $ymbol %escription &nit %efault

'( f (orward beta !))'* r *everse beta ).!

+s +s $aturation current !e-!)#f Nf (orward emission coefficient !#r Nr *everse emission coefficient !ar Var *everse Early voltage !))af Vaf (orward Early voltage !))Mje Mje 'ase-emitter exponential factor ).je Vje 'ase-emitter built-in potential )./0je 0je 'ase-emitter 1ero-bias depletion capacitance ( !pMjc Mjc 'ase-collector exponential factor ).jc Vjc 'ase-collector built-in potential )./

0jc 0jc 'ase-colector 1ero-bias depletion capacitance ( !pTr Tr +deal reverse transit time s !))nTf Tf +deal forward transit time s ).!n+2f Ikf 3igh current corner for forward beta )./+2r Ikr 3igh current corner for reverse beta )./

*c Rc 0ollector series resistance "

*e Re Emitter series resistance !

*b Rb 'ase series resistance !))4f Kf (lic2er noise coefficient !e-!"(fe Ffe (lic2er noise fre5uency exponent !f Af (lic2er noise exponent !

*esponsivity Responsivity *esponsivity at pea2 wavelength 67 !./

8) P0 *elative selectivity polynomial coefficient 9 ".:!""x!)

8! P1 *elative selectivity polynomial coefficient 96nm -!.;


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Bipolar phototransistor model equations

IEC=Is[exp VBI , CINrvt 300 1]ICC=Is

[exp

VBI , EI

Nfvt 300

1

]

IDC2=IEC

r GMINVBI , CI IDE2=

ICC

f GMINVBI , EI

ICT= [ICCIEC ]

q12

114q2

q1=1VBI , CI

Vaf

VBI , EI

Varq2=

ICC

Ikf

IEC

Ikr

%0 +6 characteristics

CBC=dQ BI , CIdVBI , CI

= Cjc

[1VBI , CIVjc ]Mjc

Tr dIEC

dVBI , CI VBI , CI Vjc

2

=2MjcCjc[2MjcVBI , CIVjc 1Mjc ]Tr dIECdVBI , CI VBI , CI >=Vjc2CBE= dQ BI , EI

dVBI , EI= Cje

[1VBI , EIVje ]Mje

Tr dICC

dVBI , EI VBI , EI Vje

2

=2MjeCje[2MjeVBI , EIVje 1Mje ] Tr dICCdVBI , EI> VBI , EI >= Vje2

0apacitance ?

?

Iopt=GpbcPopt Gpbc=Re!e"s#t#v#t$Respo"s#v#t$

f100

Re !e"s#t#v#t$=P%P1&P2&2P'&3P(&4

#)c"2=4*T

)c +f #Re"2=

4*T

Re+f

#)ba"2=8*T

)b +f #)bb"2=

8*T

)b +f #bs"

2=2qIB+f #bf"2=*f

IBf

f-fe+f

8hotocurrent ?

#oise ?

vt T=*T

q

#ICTs"2=2qIC+f

7here 4 is the 'olt1mann constant, T is the temperature in 4elvin, 5 is the electron charge, @M+# is a smalladmittance in parallel with the device junctions, f is the noise frequency bandwidth in Hz and is the light

wavelength in nm. Other symbols and node names are defined in the previous slides.



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Construction: stage 1 the basic npn transistor model

E5uation defined device Large signal %0 model @enerate symbol

;



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/

Construction: stage 2 C simulation tests


Construction: stage ! "dding capacitance to the phototransistor model


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:

Construction: stage ! "dding capacitance to the phototransistor model0harge e5uations

Q BI , CI = 0

VBI ,CI

CBCdV =TrIEC2MjcCjc[MjcVBI , CI

2

Vjc 1Mjc VBI , CI ] V BI , CI Vjc2

=TrIECCjcVjc

1Mjc

[1

{1

VBI , CI

Vjc

}

1Mjc

] VBI , CI


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Construction: stage # simulating capacitive effects

0 gain 0be and *be extraction

Building a compact semiconductor model of an npn bipolar phototransistorConstruction: stage $ "dding photoelectric effects


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, !B, !C, !E, 8', ?el@ensitivit3; 8uantitiesanalog egin Module initialisation codeA(initialmodel) egin 67 & `P:%/`P8; con'&'(=#%67); con&'(=r%67); con/&'-

9our:7&4%`P:%Dtemperature; 9our:7 & 4%:%7 end; Model quantity equations and current contributions !CC&!s%(lime$p(6(B!,E!)%con')-'); !EC&!s%(lime$p(6(B!,C!)%con)-');>'&'6(B!,C!)6a# 6(B!,E!)6ar; >&(!CC!F#) (!EC!Fr); !B&6(B!,B!)%con2;

!C&6(Collector,C!)%con5; !E&6(E!,Emitter)%con'; !(Collector,C!) G !C; !(Base,B!) G 6(Base, B!)%con2; !(B!, B!) G !B; !(E!, Emitter) G !E; !(B!,C!) G (!ECBr) ))); 8'&(6(B!,C!) H6c) I 7r%!ECCc%con%(


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43

Recent trends in compact device modelling suggest that there is a growing interest in

equation-defined device techniques and Verilog-A among the device modelling community

Current releases of the popular GP ucs!ucsStudiocircuit simulators! the freely availa"le

inear#echnology "TspiceI#$ circuit simulator and the open source %odelica Consortium $penModelicasimulation environment all include equation-defined features for compactsemiconductor device modelling

A primary aim of compact equation-defined device modelling is the generation of efficienthigh-level hardware description language models that support a wide range of circuitsimulation domains! including &C! AC! transient! '-parameter! AC and time domain noise!

plus harmonic "alance analysis! which can "e translated to Verilog-A easily( A second equally important aim is a high level of porta"ility for equation-defined device models across circuit simulation platforms

( )quation-defined device models "ased on a simple template structure encourage thedevelopment of reada"le and accurate simulation models

( An e*tension of equation-defined model parameters allows model functionality to "e

selected "y users! reducing the num"er of arithmetic computations which in turn decreases simulation times

Production versions of equation-defined device models are easily translated to Verilog-Aor the %odelica simulation language prior to compiling to C++ and merging with thecontrol and analysis C++ code sections of a simulator

A compact semiconductor model template for Qucs/QucsStudio, SPICE and Modelica

Template ucs "Tspice #erilog-% Modelica


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44

&eader ,&efname nodes param./**/,, ,su"c0t name nodes param . **,, module name 1nodes ,,2 model name nterface pin descriptions

Model )qn)qn param./yy/ ,param . 5yy6 parameter type name.yy parameter type name.yyInitialisation Analog "egin

Code 71initial8model2

end

'unctional )&& 9 Current contri"utions )quation(od) of VCV' : RModel CCV' ) G

VCC' G C CCC' C Controlled sources

C R Current contri"utionsR nterface node current

Current contri"utions Current contri"utions and voltage equations ;oise contri"utions ;oise contri"utions ;oise contri"utions

@R >ptimisation &igital 1mi*ed-mode2

Compact , nteractive su"c0ts nteractive su"c0ts Verilog-A to CBC++ %odelica to CBC++Modelling , A&%' Verilog-A compiler compilerTools compiler

;>#) %athematical e*pressions require a full range of operators and functions 1similar to Verilog-A2

plus some form of Dif then else statement/


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?ormat @ser 'election Physical parameters >perating region switches or % characteristics

9V'#C: 9V! 9V Reverse "rea0downCdep'#C: CHF! %! VH &epletion capacitanceCdiff'#C: ## &iffusion capacitance

Acnoise'#C: I?! A?! ??) 'mall signal AC noise)#);&)&

%>&) recov'#C: #A@ Reverse recoverycharacteristics

'': 'caleR arge signal time'? 'cale': domain noise

'cale?

4J"

@ser selection switches allow different levels of model to "econstructed to meet specific circuit and simulation requirementsother physical effects can "e added as needed! for e*ample verylow current or high current -V effects

Qucs equation-defined device equivalent circuit for the SPICE

semiconductor diode model


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4K

Bf noise

'hot noise

9rea0down

d

d

Q1=Qdep

Q2=Qdiff

%odel?unctionControlParameters

9V'#C:Cdep'#C:Cdiff'#C:

ACnoise'#C:

)quation )qn "loc0s contain varia"le initialisation equations and constants, Varia"le

e*pressions are converted into numerical values "efore a simulation starts,

;oise freeresistor

T)pical SPICE diode model properties

4, ?lic0er and shot noise< ACnoise'#C:.=


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4L

, -V characteristics < 9V'#C:.F =

, Reverse"rea0down

< 9V'#C: . =

3, Capacitance


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48

Variable expressions

Constants

If..then..else statement

C expressed as charge Q

SPICE test codeVid 2 0 dc 0.Vm 2 22 dc 0!s 22 " #$# " 0 %od&iode 'VS(I)C*+# C&EPS(I)C*+0 C&I,,S(I)C*+0 -!E-+# +# $)I+2.0/ ISat+#e#4 )E%P+2.81 )%+2.81 'V+4.1 I'V+#e" C30+#p V3+# %+0.1 ))+#n.op.dc Vid 4.1 # 0.0#

.end

Vid 5V6

,ree 7ersions of SPICE9)spice :; ngspice; SPICEP

.s=bc?t %od&iodeSlide8 # 2 'VS(I)C*+0 C&EPS(I)C* + 0 C&I,,S(I)C* + 0 -CS(I)C*+0/ I!ECS(I)C*+0 -!E-+#.0 +# $)I+".0 ISat+#e#4 )E%P+2.81/ )%+2.81 E@+#.# 'V+#00 I'V+#e"0 C30+#p V3+# %+0.1/ ))+#n )-


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4B Eagle(are -pplication note 22; %aG 200

If IrecS(I)C* ++ # then CdepS(I)C*and CdiffS(I)C* o7erriden

Q" represents Cdep

Q4 and Q1 represent Cdiff

Small signal -C shot and #Ff noise model not incl=ded

Qucs test circuit for a step recovery diode


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10

SPICE non-linear model of a step recovery diode


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1#

BSPICE Interpreti7e compact semicond=ctor diode model.B 'ased on mod=lar compact de7ice str=ct=re.B.s=bc?t %od&iodeSlide#0 # 2 'VS(I)C*+0 C&EPS(I)C* + 0 C&I,,S(I)C* + 0/ I!ECS(I)C*+0 -!E-+#.0 +# $)I+".0 ISat+#e#4 )E%P+2.81/ )%+2.81 E@+#.# 'V+#00 I'V+#e"0 C30+#p V3+# %+0.1

/ ))+#n )-


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FFmod=le %od&iode%S-A 5P-; C-6Mino=t P-; C-Melectrical P-; -; C-Mparameter integer 'VS(I)C*+0 from N0 #OM parameter integer C&EPS(I)C*+0 from N0 #OMparameter integer C&I,,S(I)C*+0 from N0 #OM parameter integer -CS(I)C*+0 from N0 #OMparameter integer I!ECS(I)C*+0 from N0 #OMparameter real -!E- + #.0 from N#.0 infOM parameter real + #.0 from N#.0 infOMparameter real $)I + ".0 from N#.0 infOM parameter real ISat + #e#4 from N#e"0 infOMparameter real )E%P + 2.81 from N#00.0 infOM parameter real )% + 2.81 from N#00 infOMparameter real E@ + #.# from N# infOM parameter real 'V + #00 from N0 infOMparameter real I'V + #e" from N#e20 infOM parameter real C30 + #e#2 from N#e"0 infOMparameter real V3 + #.0 from N0 infOM parameter real % + 0.1 from N#e2 infOMparameter real )) + #e from N#e20 infOM parameter real )-< + #00e from N#e20 infOMparameter real -, + # from N0.# infOM parameter real A, + #e# from N#e"0 infOMparameter real !S + 0.0# from N#.0e infOM

real C30)2;ISE,,;)#;)2;E@)#; E@)2; P; P; P##; PA; PQ; V))2; V3)2; IS)2; A2; A1; I'VE,,; I&'V; 'VE,,Mreal @%I; CdepP-!-%; CdiffP-!-%; ,CP; C%; C#; C,; C2; C"; C4; IdMFFanalog beginFF E=ation initialiationR5initialmodel6beginC30)2+C30B-!E-M ISE,,+ISatB-!E-M )#+)%/2".#1M )2+)E%P/2".#1M E@)#[email protected])#B)#F5##08/)#6ME@)[email protected])2B)2F5##08/)26M P+#%M P##+%F52BV36MPA+#."8010"e2"MPQ+#.02#42e#MV))2+PAB)2FPQM V3)2+5)2BV3F)#62BV))2B5poT5ln5)2F)#6; #.16655)2BE@)#F)#6E@)26M

IS)2+ISE,,BpoT5)2F)#; $)IF6Bexp55E@)#FV))26B5#)2F)#66M A2+#F5BV))26M A1+BV))2MI'VE,,+I'VB-!E-M P+C30)2BV3)2FPMI&'V+IS)2B5limexp5'VBA26#.06M@%I+#e#2Mif 5I'VE,, I&'V6 'VE,,+'VA1Bln5I'VE,,FI&'V6M else 'VE,,+'VMif 5I!ECS(I)C*++#6 CdepP-!-%+0M else if 5C&EPS(I)C*++#6 CdepP-!-%+#M else CdepP-!-%+0Mif 5I!ECS(I)C*++#6 CdiffP-!-%+0M else if 5C&I,,S(I)C*++#6 CdiffP-!-%+#M else CdiffP-!-%+0M,CP+V3M C,+)-


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// ContributionsI5P-;-6 H/ V5P-;-6F!SMId + IS)2B5limexp5V5-;C-6BA26#.06/@%IBV5-;C-6MI5-;C-6 H/ IdMif 5CdepP-!-% ++ #6

if 5V5-;C-6 + 0.06 I5-;C-6 H/ ddt5C30)2B5V5-;C-6/P##BV5-;C-6BV5-;C-666Melse I5-;C-6 H/ ddt5PB5#poT5#V5-;C-6FV3)2; P666M

else I5-;C-6 H/ 0.0Mif 5 'VS(I)C* ++ #6

if 5V5-;C-6 H 'V6 I5-;C-6 H/ IS)2B5limexp55'VE,,/V5-;C-66BA2#/'VE,,BA266Melse I5-;C-6 H/ 0.0M

else I5-;C-6 H/ 0.0Mif 5CdiffP-!-% ++ #6 I5-;C-6 H/ ddt5))BId6M else I5-;C-6 H/ 0.0Mif 5 'VS(I)C* ++ #6

if 5V5-;C-6 ++ 'V6 I5C-;-6 H/ I'VM else I5-;C-6 H/ 0.0Melse I5-;C-6 H/ 0.0Mif 5I!ECS(I)C* ++ #6

if 5V5-;C-6 H+0.06 I5-;C-6 H/ ddt5C30BV5-;C-66M else I5-;C-6 H/ 0.0Melse I5-;C-6 H/ 0.0Mif 5I!ECS(I)C* ++ #6 if 55V5-;C-6 0.06 JJ 5V5-;C-6 H ,CP66 I5-;C-6 H/ ddt5C#BpoT5V5-;C-6/C2; 26C"6M

else I5-;C-6 H/ 0.0Melse I5-;C-6 H/ 0.0Mif 5 I!ECS(I)C* ++ #6 if 5V5-;C-6 + ,CP6 I5-;C-6 H/ ddt5C,BV5-;C-6C46M

else I5-;C-6 H/ 0.0M

else I5-;C-6 H/ 0.0Mif 5-CS(I)C* ++ #6 begin I5P-;-6 H/ Thitenoise554BPA6F!S;LthermalL6M I5-;C-6 H/ Thitenoise52BPQBId; LshotL6M I5-;C-6 H/ flic?ernoise5A,BpoT5Id;-,6; #; Lflic?erL6MendendEndmod=le

!S

&iode I anddQFdt terms

&iode stepreco7erG I

&iode smallsignal I noise

1"

Modelica code for a basic diode modelmodel ModDiode

Modelica.Electrical.Analog.Interfaces.NegativePin Cathode; Modelica.Electrical.Analog.Interfaces.PositivePin Anode;parameter Integer CdepSWITC ! "; parameter Integer Cdiff!I"C# $ %; parameter Integer A&EA $ ';

t # l N $ " t & l ("I ) % t & l I t ' '*

&e7ice parameters


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parameter #eal N ! $."; parameter &eal ("I $ ).%; parameter &eal Iat $ 'e-'*;parameter #eal TEMP ! %&.'(; parameter &eal "+,M $ .0; parameter &eal E1 $ '.'; parameter &eal 2V $ '%%;parameter #eal I)* ! ".""$; parameter &eal C3% $ 'e-'; parameter &eal V3 $ '.%; parameter &eal M $ %.0;parameter #eal TT ! $e+$%; parameter &eal C3%E44 $ C3% 5 A&EA; parameter &eal "' $ "+,M 6 7).'0;parameter #eal T% ! TEMP , %-.$(; constant &eal P8 $ '.%'7*e-'9; constant &eal P: $ '.)%0%)e-);constant #eal A ! "."""-"%; constant &eal 2 $ ''%.%;constant #eal MA/E/P ! '"." 0Ma1im2m arg2ment in e1p f2nction 3efore linearisation + same f2nction as lime1p in *erilog+A0;

constant #eal 4MIN ! $e+$%;parameter &eal C3%E44 $ C3% 5 A&EA;parameter #eal C5"E66T% ! C5"E66 7 8$ , M 7 "."""9 7 8T% : T$; parameter &eal "' $ "+,M 6 7).'0;parameter #eal T% ! TEMP , %-.$(; parameter &eal Vt" $ P: 5 "< / P8;parameter #eal E4T$ ! E4 + 8A 7 T$ 7 T$ < 8) , T$; parameter &eal E1" $ E1 - A 5 " 5 "< / 2 6 "% ! $." < 8N 7 *tT%; parameter &eal :) $ I" 5 :;#eal v?i?gd?Cdep?Cdiff?CT?i$?i%?i;

e=uationv ! Anode.v : Cathode.v; % $ Anode.i 6 Cat>ode.i;i $ Anode.i;

i$ ! if v < *tT% @ MA/E/P then IST% 7 8e1p8MA/E/P 7 8$." , v < *tT% + MA/E/P + $." , 4MIN7v else IST%78e1p8>% v + $." , 4MIN7v;

gd ! if v < *tT% MA/E/P then > 7 e1p8>% 7 v , 4MIN else > 7 e1p8MA/E/P , 4MIN;

Cdep ! if CdepSWITC !! $ then if v @ "." then C5"E66 7 8$ , 8M 7 v < *5 else C5"E66 7 8$ + v < *5 = 8+M else $e+%";Cdiff ! if CdiffSWITC !! $ then if v @! "." then TT 7 gd else $e+%" else $e+%"; CT ! Cdep , Cdiff;i $ Cdep 5 derv


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54

// #ith $i%ed capacita"ce a"d "oise & Curtice'(a'// This is $ree so$t#are& ou ca" redistri!ute it a"d/or modi$// it u"der the terms o$ the )*+ )e"eral Pu!lic ,ice"se as pu!lished !// the Free So$t#are Fou"datio"& either (ersio" . or at our optio"0// a" later (ersio"'//// Copright C0. Mie 2ri"so". m!ri"34567ahoo'co'u

// QucsStudio (ersio" Septem!er 411'//8i"clude 9discipli"es'(ams98i"clude 9co"sta"ts'(ams9

//module Curticerai". )ate. Source0&i"out rai". )ate. Source&electrical rai". )ate. Source&

//8de$i"e attrt%t0 ;t%t;08de$i"e CT $rom 1e-D :i"$0 8attri"$oB9cha""el le"gth modulatio" parameter9 u"itB91/V90&parameter real Vtotc B 4 $rom -i"$ : i"$0 8attri"$oB9Vto temperature coe$$icie"t90&parameter real 2etatc B 4 $rom -i"$ : i"$0 8attri"$oB92eta temperature coe$$icie"t9 u"it B 9/Celsius90&parameter real Alphatc B 4 $rom -i"$ : i"$ 8attri"$oB9Alpha temperature coe$$icie"t9 u"it B 9/Celsius90&

parameter real Eg B 1'11 $rom 1e-@ : i"$0 8attri"$oB9e"erg gap9 u"it B 9eV90&parameter real Tau B 1e-D $rom 1e-4 : i"$0 8attri"$oB9tra"sit time u"der gate9 u"it B 9s90&parameter real s B 1e-15 $rom 1e-4 : i"$0 8attri"$oB9diode saturatio" curre"t9 u"it B 990&parameter real * B 1 $rom 1e-D : i"$0 8attri"$oB9diode emissio" coe$$icie"t90&parameter real Gti B 6'4 $rom 1e-D : i"$0 8attri"$oB9diode saturatio" curre"t temperature coe$$icie"t90&parameter real A$ B 1 $rom 4 : i"$0 8attri"$oB9$licer "oise e%po"e"t90&parameter real =$ B 4 $rom 4 : i"$0 8attri"$oB9$licer "oise coe$$icie"t90&parameter real )ds"oi B 1 $rom 4 : i"$0 8attri"$oB9shot "oise coe$$icie"t90&parameter real 2( B 1eD $rom -i"$ : i"$0 8attri"$oB9drai"-gate Hu"ctio" re(erse !ias !reado#" (oltage9 u"it B 9V9 0&parameter real R1 B 1eD $rom 1e-D : i"$0 8attri"$oB9!reado#" slope resista"ce9 u"it B 9 $rom -36 : i"$0 8attri"$oB9parameter measureme"t temperature9 u"it B 9Celsius90&

QucsStudio: RF Curtice MESFET compact modelPart 1: Verilog-A code co"ti"ued


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55

real T1. T. VtIT. VtoIT. RgIT. RdIT. RsIT. V$. Ah. 2etaIT. ds&real Tr. co"1. EgIT1. EgIT. Qds&real CgsIT.CgdIT. V!iIT& real gs1. gs. sIT&real co". co"6. V$C& real $ourt. gm. A". thermalIp#r. $licerIp#r. AlphaIT&

// Model !ra"ches

!ra"ch rai". Source0 !S& !ra"ch )ate. Source0 !)S& !ra"ch )ate. rai"0 !)&//a"alog !egi"T1BT"omJ8CT


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56

MESFET su!circuit !od

MESFET Sm!ola"d parameters

QucsStudio: RF Curtice MESFET compact modelPart 6: Test simulatio"s


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57

C AC

QucsStudio:


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58

Post-simulatio"data processi"g

co"trol $ile


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59

source software under the GNU General Public icence !GP".

#. $his presentation has attempted to outline the history and the fundamental features

of the pac%a&es' the available e(uation)defined components' built in modellin& aids' analysis types and post)simulation data analysis and visualisation capabilities.

*. $he presentation also introduced a number of basic approaches to circuit simulation with Qucs and QucsStudio.

+. , series of slides also showed how the compact semiconductor modellin& and circuit

macromodelin& features implemented in the current QucsStudio release can be used to develop e(uation)defined component models of established and emer&in& technolo&y devices.

5. , -turn)%ey approach to compact device modellin& usin& the /erilo&), hardware description lan&ua&e was introduced and the proposed modellin& system

demonstrated via the development of a 0S2$ 32 device simulation model.

Qucs and QucsStudio are freely available under the open source General Public LicenceDownload from:Qucs version 0.0.1 http:!!"ucs.sourcefor#e.netQucsStudio version 1.$.% http:!!mydarc.de!DD&'!QucsStudio!"ucsstudio.htmlQucsStudio(1.$.%)li#ht.*ip +without ,ctave and model compiler-

4rinson 0. and ahn S.'/nteractive compact device modellin# usin# Qucs e"uation defined devices '

4eferences
http://qucs.sourceforge.net/http://mydarc.de/DD6UM/QucsStudio/qucsstudio.htmlhttp://mydarc.de/DD6UM/QucsStudio/qucsstudio.htmlhttp://qucs.sourceforge.net/


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' p # # " '6nternational ournal of Numerical 0odellin&7 lectrical Networ%s' 8evices and 2ields' #1!5" pp. **5)*+9'September:ctober #;;?>.

4rinson 0. and ahn S.' Qucs: GPL software paca#e for circuit simulation2 compact device modellin# andcircuit macromodellin# from D3 to 45 and 6eyond' 6nternational ournal of Numerical 0odellin&7 lectricalNetwor%s' 8evices and 2ields' ##!+" pp. #9?)*19' uly,u&ust #;;9. 8:6 7 1;.1;;#=nm.?;#.

4rinson 0. and ahn S.' 3ompact macromodellin# of operational amplifiers with e"uation defined devices'6nternational ournal of lectronics' 9>!#"' pp. 1;9)1##' 2ebruary #;;9' D,/:1;.1;*);;>+.

4rinson 0.. and Nabi=ou @.' daptive subcircuits and compact 8erilo#( macromodels as inte#rated desi#nand analysis blocs in Qucs circuit simulation26nternational ournal of lectronics' /ol. 9< !5"' pp. >*1)>+5' 0ay#;11. 8:67 1;.1;#+5#.

4rinson 0..' ahn S. and Nabi=ou @.' tabular source approach to modellin# and simulatin# device and circuitnoise in the time domain' 6nternational ournal of Numerical 0odellin&7 lectronic Networ%s' 8evices and 2ields' /ol

#>!>"' pp. 555)5>?' November8ecember #;11. 8:67 1;.1;;#=nm


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>1

=switched current analo# cell modelin# and simulation in the transient and lar#e si#nal 3 domains ' 0iCeddesi&n of 6nte&rated Aircuits and Systems !06D8S" #;1;' Proceedin&s of the 1? 6nternational Aonference' pp.*)+


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4rinson 0..and Nabi=ou @.'daptive P5L(;8 lon# and short channel ',S device models for Qucs2SP/3 and 'odelica circuit simulation' 0iCed desi&n of 6nte&rated Aircuits and Systems !06D8S" #;11'Proceedin&s of the 1< 6nternational Aonference' pp. >5)?;' Gliwice' Poland' une #;11.6S4N 9?7 0.. 4rinson' Qucs modellin# and simulation of analo#ue!45 devices and circuits.

>#
http://ieeexplore.org/http://ieeexplore.org/http://www.mos-ak.org/india/presentations/Brinson_MOS-AK_India12.pdfmailto:[email protected]://www.springer-sbm.com/http://www.springer-sbm.com/mailto:[email protected]://www.mos-ak.org/india/presentations/Brinson_MOS-AK_India12.pdfhttp://ieeexplore.org/http://ieeexplore.org/

10 mike brinson

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