1. physics of semiconductor devices
TRANSCRIPT
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Institute of Solid State PhysicsTechnische Universität Graz
1. Physics of Semiconductor Devices
Oct. 2, 2018
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• Diodes, solid state lasers, transistors• Computing, communications • Controllers: vacuum cleaners, coffee makers, etc.• Transportation, autonomous driving, electric cars• Efficient lighting, solar cells, displays• Lasers
Institute of Solid State Physics
Physics of Semiconductor Devices
Technische Universität Graz
Peter Hadley
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http://www.if.tugraz.at/psd.html
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Before the lecture, the slides will be uploaded to:https://cloud.tugraz.at/index.php/s/NjuEDwhj1R5CBGT
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Institute of Solid State Physics
Examination Technische Universität Graz
1 hour written exam
One page of handwritten notes
1 Contribution to improve the course
Chapter summaries
Solutions to exam questions
Simulations
Videos
Oral exam
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Jack Kilby's first integrated circuit 1958
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nodemetal 1/2 pitch
gate length
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1 nm
20 nm
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https://irds.ieee.org
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Al: = 3.5 ×107 1/Ω·m
Si: = 4.3 ×10-4 1/Ω·m
Conductivity
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Silicon
silicon crystal = diamond crystal structure
• Important semiconducting material• 2nd most common element on earths crust (rocks, sand, glass, concrete)• Often doped with other elements• Oxide SiO2 is a good insulator
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Large (2 m) single crystals are grown
Silicon
Czochralski process
http://en.wikipedia.org/wiki/Czochralski_process
Float zone
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50 m - 0.5 mm thick
Silicon wafers
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http://britneyspears.ac/physics/fabrication/photolithography.htm
http://cleanroom.byu.edu/lithography.parts/Lithography.html
Photolithography
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Ion implantation
Implant at 7º to avoid channeling
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MOSFET
functions as a switch~ 1 billion /chip
Metal Oxide Semiconductor Field Effect Transistor
http://en.wikipedia.org/w
iki/Image:M
osfet_linear.svg
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p-Si 100 wafer
Self-aligned fabrication
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p-Si
SiO2 gate oxide
Dry oxidation
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p-Si
SiO2
polysilicon
TiN (CVD)30–70 μ·cm Conductive diffusion barrier
photoresist
CVD: SiH4 @ 580 to 650 °C
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p-Si
SiO2
polysilicongate
TiN
Implant
Expose resistDevelopEtch poly and TiNStrip resistImplant source and drain
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p-Si
n+ n+
polysilicongate
Self-aligned fabrication
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p-Si
n+ n+
Spacer
polysilicongate
SiNx
PECVD SiNx
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p-Si
n+ n+
Spacer
polysilicongate
SiNx
Etch back to leave only sidewalls
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p-Si
polysilicongate
Implant
n+ n+
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p-Si
polysilicongate
n+ n+
TiSi2 (metal)
Salicide (Self-aligned silicide)
Transition metal (Ti, Co,W) is deposited (CVD). During a high temperature step is reacts to a silicide (TiSi2). Not silicide is formed on nitride or oxide.