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http://www.semisouth.comhttp://www.mcasp.msstate.edu/Mississippi Center for Advanced Semiconductor Prototyping

SemiSouth Laboratories and Mississippi State Univ.

SemiSouth Laboratories, Inc.Silicon Carbide Electronics Specialists

1 Research Blvd., Suite 201

Starkville, MS 39595

www.semisouth.com 662-324-7607

• Formed in July 2000 as a partnership - incorporated in Jan. 2002• A “spin-off” of Mississippi State.• Currently has 10 full-time employees

(including 5 recent MSU graduates)

• Technology license in final stages of negotiationMSU will hold minority stake in SSL in exchange for royalty-free, exclusive license for MSU SiC technology

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SiC Wafer Size Comparison

1950 1960 1970 1980 1990 20000

10

20

30

40

4)3)

2)1)

1. Teal and Little (1950)2. Mullin, Heritage, Holiday, and Straughan (1968)3. Tairov and Tsvetkov (1978)4. Davis, Carter, and Hunter (1989)

SiC

GaAs

Si

D

iam

ete

r (c

m)

Year

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Benefits of SiC Power Devices• Lower On-resistance => increased system efficiency

• Higher Frequency => smaller passive components

• Higher Temperature => relaxed cooling

requirements Payoff: Improved System Performance

(size, weight, cost, reliability, efficiency)

Potential automotive applications:1. Hybrid-electric vehicle: compact, efficient, high-temperature DC conversion2. High-temperature applications: In-situ combustion monitoring, brake sensor, etc.

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SiC HIGH-TEMPERATURE POWER DEVICES WILL ENABLE IMPLEMENTATION OF ADVANCED DOD 'MORE ELECTRIC' PLATFORMS

IN 21ST CENTURY BATTLE SCENARIOS

SiC HIGH-TEMPERATURE POWER DEVICES WILL ENABLE IMPLEMENTATION OF ADVANCED DOD 'MORE ELECTRIC' PLATFORMS

IN 21ST CENTURY BATTLE SCENARIOS

Electric Guns

Active Armor

Counter Mine

Counter Measures

Electric Propulsion

Life Support

• Stealth Energy & Power • Engine Generator

• Future Scout • Combat Hybrid Power System • Future Main Battle Tank

• Surface Combatant 21 • Electronic Counter Measures

Power Conditioning

SiC HIGH TEMP HIGH POWER

ELECTRONICS

Pulsed

Continuous

• More Electric Aircraft • Joint Strike Fighter • C-5 Upgrade

SiC High Temperature Power Devices Enable Advanced DoD “More Electric” Platforms in Future Battle Scenarios

PowerConditioning

SiC HIGH TEMPHIGH POWER

ELECTRONICS

•Runs hotter with smaller cooling systems

•More reliable

•Higher thermal capacity

•Greater temperature margin

•More efficient

•More power for the $

•75% less space

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Benefits of SiC RF Devices

• Higher Voltage => increased system efficiency

• Higher Linearity => improved broadband performance

• Higher Temperature => higher power density

Payoff: Improved System Performance

(size, weight, cost, reliability, efficiency)

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The transistor power level drives solid state transmitter and T/R module size, weight, and cost. Use of SiC is projected to reduce all three by 50% or more in the near future.

The transistor power level drives solid state transmitter and T/R module size, weight, and cost. Use of SiC is projected to reduce all three by 50% or more in the near future.

• Higher Power Transistors•Fewer Circuits•Fewer Modules•Smaller, Lower Cost Systems

• Improved Thermal Conductivity•Easier Cooling

• High Temperature Capability•More Cooling Options

• Higher Voltage Operation •Higher Device Impedance•Reduced Distribution Losses per Watt

• Reduced Parasitics per Watt•Higher Frequency Operation •Higher Efficiency & Wider Bandwidth

Transmitter Size, Weight & Cost Normalized Transistor Power Level

0

10

20

30

40

50

60

70

80

90

100

1x 2x 3x 4x

RF Amplifiers

Power Supplies

Other

SiC Advantages for Transmitters

SiC substrate

SiC substrate

Collector

SiC substrate

Start

Collector n-type epi

Basep-type epi

EmitterImplant

1600°C silaneimplant anneal

Collector

SiC substrate

Collector

SiC substrate

Collector

SiC substrate

CollectorIsolation etchwith SiC RIE

Si substrate

Si substrate

Collector

Si substrate

Start

Collector n-type epi

Base diffusionp-type

EmitterDiffusion

oxidation

Lithography & metal contacts

Collector

Si substrate

Collector

Si substrate

Collector

Si substrate

Collector

C

B BE E

SiC substrate

Collector

C

B EEOxidation;Lithography &metal contacts

Generic condensed BJT fabricationprocess for Si (above) and SiC (left)

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MSU - SiC BACKGROUND

• Emerging Materials Research Lab (EMRL)– Dual-tube, 75 mm diameter SiC reactor

– Growth of SiC epitaxy since 1995 (All major polytypes)

• Mississippi Center for Advanced Semiconductor

Prototyping (MCASP)– P, N, SI epitaxy development

– Basic Device design & development

– Characterization (PL, CV, DLTS)

– Scale-up all processes for manufacturing

– System prototypes, virtual incubator

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MCASP - BackgroundThe Mississippi Center For Advanced Semiconductor Prototyping (MCASP) is one of the leading research institutions doing research in SiC devices.

The Mississippi State University facility is exclusively used for SiC semiconductor electronics prototyping and research. ---The principle advantages of SiC power devices are their low on-resistance, improved frequency and higher operating temperatures. These advantages increase system efficiency, reduces the number of passive components and cooling requirements respectively. The advantages of SiC RF devices are their higher voltage, higher linearity and higher operatingtemperature which improves efficiency, broadband performance and power density.

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Leveraging Basic Research into AdvancedTechnology at Mississippi State University Rapid, economical transfer of government sponsored technology development into systems

• SiC Power Device Prototyping• 10 to 100X Improvement in Power Density

Systems Production• Defense OEM’s• Commercial OEM’s

Component Production• New Small Businesses • Semiconductor Industry

Basic MaterialsDevelopment• From MSU research

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SEMISOUTH LABORATORIES

• Fast, effective technology transfer from Mississippi Center

for Advanced Semiconductor Prototyping (MCASP).

• Uses university resources to establish immediate low-volume

production.

GOAL: Become a leading supplier of SiC discrete and integrated electronic devices.

Power Rectifiers & SwitchesHigh-frequency power amplifiersSmart Power/RF Integrated Circuits

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SemiSouth Product Development

MCASP /S.B. Diode

Materials / Circuit Design

BJTVJFETPIN Diode

Smart PowerI.C.’s

Lateral JFET

Technology

Commercialization

Applications

600 V SBD for biomedical

1800 V PIN for power cond.

1800 V BJT for DC-DC conv. in space

600 V SIT for high-power radartransmitt. & cell-phone base st.

Smart power I.C. for satellite smart structural control & commercial lamp ballasts

20001994 2001 2002 2003

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SemiSouth Organization Chart

R e c tif ie rs (S B D /P IN )N . M e rre tt, P h .D .

S w itch e s (V JF E T)J . B . D u fre ne

P h oto litho g ra p hyD . T u b bs

R F D e v icesS a nk in , D u fre ne

SiC Device ProductsJ .B . Ca sa d y, P h .D .

V ice -P re s id e nt

P re c is io n p -typ e e p iL o s, K osh ka , V a nd e rsa nd

S I E p ita xyA . L os , Y. K osh ka

E p ita xy R ea c to r O p e ra tio nsD ra p er

F a b te ch n ic ia ns

R F D ev ice S u p p o rtV . B o n da ren ko

S iC F a brica tion

SiC Epitaxy ProductsJ . G le se ne r, P h .D .

V ice -P re s id e nt

P ro to type re ac to rE . B urn e tt, W . D ra p er

F T IR E n g in e erJ . M a zzo la

Research & Developm entM . M azzo la , P h .D .

V ice -P re s id e nt

C O M P T R O L L E RK . C u tsh a ll, C .P .A .

H u m an R e so u rcesM . G risse tt

Adm inistrationC . G rayso n , P h .D .

Sem iSouthfounded 13 July 2000C. Grayson, President

M. State - MCASPSSL leases timeas-needed

• 10 full-time employees in Jan. 2002• 8 with advanced degrees• 6 MSU graduates

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MCASP Organization Chart

Full-TimeStaff Totals:

MCASPPh.D. - 4M.S. - 2B.S. - 1Tech. - 3

SemiSouthPh.D. - 1M.S. - 2B.S. - 2Tech. -1

• 10 Graduate Students• 4 Undergrad Students

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Research Park

• Aerial View• RTC building

to be added in 2002-3

• 20,000 s.f.• 7,500 s.f. lab

space including clean room

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MCASP Facilities

• Lam 9400 RIE system• Lam 9900 PECVD system• Hitachi SEM• GCA g-line stepper• Varian e-beam• Varian sputter• Test Equipment to 3 kV, 400 A• Automatic prober to 400°C• SiC epitaxy reactors

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Lam 9900 PECVD• Used to deposit SiO2 for implant

mask or final passivation

• High Density Plasma (one

microwave and one RF power

source)

• SiH4 (Si source) and O2 (oxygen

source)

• NF3 chamber clean

• Donated by Lam Research, Inc.,

May 2000

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Summary - SemiSouth• SemiSouth will have govt. revenues > $1.5 M over the

next 3 years to fund engineering & device IP development.

• MCASP Incubator will house device production facilities for next 3-5 years.

• 10 full-time high-tech jobs already created… mostly filled with MSU graduates

• SemiSouth will build a privately owned SiC epi development and production facility.

• Additional capital will expand this facility.

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Summary - MCASP

• MCASP launched to move SiC technology towards Advanced Technology Demonstrations.

• A total of $11M in funding expected over next 36-48 months for discrete and integrated power devices.

• SemiSouth business creates economic development & increases MSU research $$

• MSU Research & Tech. Corp will build 20,000 sq. ft incubator facility to house MCASP, SemiSouth, high-tech businesses in 2001-2.

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Acknowledgments•Office for Research•Research Technology Corporation

•Government Sponsors •(AFRL, ONR, BMDO)

•Industry affiliates