1.

2.

3.

4.

5.

6.

7. /

8.

( Definition and Specification of Transducer )

1. (Sensor)

2. (Transducer)

1. () ()

2.

3. (amenable)

4. (accuracy)

5. (reproducibility) ( )

6. ( amplitude )

7. ( )

8. ( time lag

9.

10.

( Selection of the Instrument )

1.

1.1

1.2

1.3

1.4 ()

1.5

1.6

1.7 (susceptibility)

2.

2.1 (suitability)

2.2 (adaptability)

2.3

2.4

2.5

2.6 (fool-proof)

2.7

2.8

2.9

2.10

3.

3.1

3.2

3.3

3.4

(Thermal Sensors)

(Definition of Temperature)

1. (Thermal Energy)

(equilibrium position) WTH = 0 WTH > 0

(random)

2. (Temperature)

(Joule) SI

2.1 (Absolute Temperature Scale)

2 (K) (0 R)

( 1K ) = ( 10 R ) = 10 R

T (K) = T (0 R)

T (K) = K

T (0 R) = 0 R

2.2 (Relative to Thermal Energy )

() ()

T (0 C) = T(K) 273.15

T (0 F) = T(R) - 459.6

T (0 F) = T (0 C) + 32

( Relative to Thermal Energy )

WTH = kT

k = 1.38 x 10 23 J/K

(Measurement of Temperature)

1. ( Non-Electrical Methods )

1.1

1.2

1.3

1. (Solid Rod thermometer)

2. (Bimetallic Thermometer)

3. (Liquid-in-Glass Thermometer)

4. (Pressure Thermometer)

5. (Mercury-in-steel Thermometer)

6. (Constant Volume Thermometer)

()

7. ( Vapor Pressure Thermometer )

1. (Temperature Versus Resistance of Metallic)

1 (valance electron ) ( conduction electron )

( stationary atom )

2. ( Resistance Versus Temperature Approximation )

1 L T1T2

( linear approximation ) ( R-T curve )

( resistance Temperature Detectors ; RTD )

( Positive Temperature Coefficient ; PTC ) ( Resistance Temperatures )

Sir Humphry Day 50 Sir Willium Siemens ( PRTD ) ( -182.960 C ) ( 630.740 C ) IPTS

(conductivity) ; (resistivity) 0.4% 1

=

= ; m/V.s

(Type of RTD)

1. PT PT-10, PT-100, PT-1000

2.

3.

4. (drift)

(Characteristic of RTD)

1. (Sensitivity) = 0.00385 //0C ( 0.004/0C ) 100 0.4 1000C

2. (Response Time) ( ) (sheath)

3. (Construction)

4. (Sine Conditioning)

5. (Dissipation Constant)

6. (Range) -1000C 6500C -1800C 3000C

1.

2.

3. (I2R) (Thermocouple) (emf) 2 () Thomus Seebeck ..1821 2

2

(Termoelectric Effect)

1. (Seebeck Effect)

1. emf.

2. emf.

3. emf.

= ; volts/K

T1, T2 = ; K

2. (Peltier Effects) (T2) (T1) (Peltier effect)

3

(Thermocouple Table)

(00c) 2100c j 00c

V(2100c) = 11.3 mV( J, 00c ref.)

4.768 mV s 00c T(4.768 mv) = 5550c ( s, 00c ref.)

(interpole)

VM =

VH VL = TH TL VH

VM VL VM TH TL = VH VL

( Change of Table Reference) 4

J 30 0c 4000c 300c 00c . 1.54 mV () 400 0c 00c 4 0 200C

V(300c) = 1.54 mV ( J , 00c ref.)

V(4000c) = 21.85 mV ( J ,00c ref.)

()

V(4000c) = 20.31 mV ( J ,300c ref.)

Vj0 J 0 0c Vj30 J 300c

(Characteristic of Standard Thermocouples)

1. (Sensitivity) NBS 100 mV

5

2. (Construction) 5 : (peltier element)

#10 # 30 0.02 mm (microwire)

3. (Range)

4. (Time Response)

5. (Signal Conditioning)

(Characteristic in Application of Thermocouple Standard Type)

7 ANSI ASTM

1. S Le Chatelier 1886

S (oxidizing)

(inert)

0 15500c 50 17000c

(630.740c) (1064.430c) IPTS 68

s

(reduzing)

(vacuum)

2. R

R

S

0 16000c

-50 17000c

S

5400c3. B 1954 B 100 16000c 50 17500c

S R

(linearity)

B

R S (double value region) 0-42 0c()

00c 420c

()

4. J BS

BS 1797 Part 30 , 1993

1. Class 1 = -400C +7500C 0.004 x t 1.50C

2. Class 2 = -400C + 7500C 0.0075 x t 2.50C

t

J

BS 7937 Part 30 210 12000c 7600c

J T

00c

5380c

20 0.5%

5. K .. 1916 .. 1916

K

K / K

1. () ( curie point )

2. ( 2000c 6000c ) K

3. 10000c K

4. K

IEC 584( ) 2700c +1,3700c IEC 584 (

1. Class 1 = -400C +1,0000C 0.004 x t 1.50C

2. Class 2 = -400C + 1,2000C 0.0075 x t 2.50C

3. Class 1 = -2000C +400C 0.015 x t 2.50C

t

BS 4937 part 30 ,1993() K ( vx)

K

1800c 1,3500c

(inert)

( 1)

K () 30 6. T

T

K K ( 1000c 1%) 185 3000c 250 400 0c

T

370 0c

( )

20 10%

()

7. E

E

0 8000c K

1.

2. (extention wire)

3.

4.

5.

6.

7. integrate A/D

8.

9. (Thermistors)

Thermally sensitive variable resistor 100 450,000 - (1) (2) 2

(Semiconductor Resistance Versus Temperature)

1. ()

2.

3. (time response) () 0.5 10 10

2

...

25 C

B

,

-100 C 450 C ()

0.5 100 M

1 k 10 M

2000 K 5500 K

> 125 C

300 C

600 C

1 mW/K

8 mW/K

1 22

1 1

1. (sintering dope)

2.

6

(Signal Conditioning)

(Integrated Circuit Temperature Sensors)

335

LM335 5.9

... LM135/LM235/LM335( C)

LM135

LM235

LM335-55 +150

-40 +125

-40 +100

LM335 10 mV/ K

VZ = T

(..)

273

0 C = 273 K

LM335

VZ = 2.73 V + T(..)

5.25

5 mA > IZ > 400 A

LM335 IZVZ 1 mA

5.25

=

(...)

LM335 2.73 0 C 0

5.26 (two point calibration)

1. (wiper) -2.73

2.

3.

4. 2

RZERO RBIAS IZ 34

LM34 National Semiconductor LM34 LM34

1.

2.

EMBED Equation.3

EMBED Equation.3 -50 +300 F

3.

4. 70 mA 0.2 F

5. -50 +300 F LM34C -40 +230 F

LM34 TO-46 LM34C TO-92 LM34 5.27 50 mV 3.00 V +5 -300F 0F 5.27() 300F +3.00 -50F -500

1. ()

2. 5.27 () ()

3. 499 IT VT 499

590/592

590 592 Analog Device AD590 AD592

T K

T C AD590 +0.5C -55 +150C AD592 AD590 -25 +105C 0.5C 25C 0.2C 0 70C

(Design Considerations)

1. (nominal value)

2. 4-20 (isolation)

3.

4.

( 1) (Mechanical Sensors)

(Displacement, Location or Position Sensors)

1.

2. (rolling mill)

3.

4.

5.

(Potentiometer or Potentiometric)

1.

(1) (linear potentionmeter)

(2) (rotary potentiometer)

300 / 2,000 /

2. (Resolution)

Resolution=

3.

(Capacitive and Inductive)

1. (Capacitive)

full scale displacement

Number of turn of wire

_1121948032.unknown

_1121948782.unknown

_1121949504.unknown

_1121960512.unknown

_1121961017.unknown

_1121961773.unknown

_1121960494.unknown

_1121948898.unknown

_1121948142.unknown

_1121948639.unknown

_1121948096.unknown

_1121418845.unknown

_1121721611.unknown

_1121722507.unknown

_1121722557.unknown

_1121948014.unknown

_1121722532.unknown

_1121722459.unknown

_1121421087.unknown

_1121721485.unknown

_1121721549.unknown

_1121422855.unknown

_1121423507.unknown

_1121721138.unknown

_1121423428.unknown

_1121421150.unknown

_1121419646.unknown

_1121421017.unknown

_1121419147.unknown

_1121417086.unknown

_1121418091.unknown

_1121418572.unknown

_1121418054.unknown

_1121375170.unknown

_1121378264.unknown

_1121374813.unknown

_1121374878.unknown