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國立臺灣大學校長候選人資料表一、個人基本資料

姓名別號性別出生年月日國籍李嗣涔男民國 41 年 8 月

13 日中華民國通訊處：106 臺北市羅斯福路四段一號國立台灣大學電機工程學系電話：（公）(02)23635251 X 440（宅）(02)23635443傳真：(02)23675509電子郵件信箱：[email protected]

現職

服務機關名稱專兼任職稱（職級）到職年月日

國立台灣大學電機工程系專任教授民國 75 年 6 月

大學以上學歷

學校名稱院系所學位名稱授予學位年月

國立台灣大學電機工程系學士民國 63 年 6 月美國史丹福大學電機工程系碩士民國 66 年 6 月美國史丹福大學電機工程系博士民國 70 年 1 月

經

歷

服務機關名稱專兼任職稱（職級）任職起迄年月

國立台灣大學電機工程系專任教授民國 75 年 6 月~現在

美國史丹福大學電機系兼任 Visiting Professor 91 年 8 月至 92 年 2 月國立台灣大學兼任教務長 85 年 8 月至 91 年 7 月

國防部專任參事 82 年 4 月至 83 年 12 月國立台灣大學電機工程

系兼任系主任 78 年 8 月至 81 年 7 月國立台灣大學電機工程

系專任副教授 71 年 8 月至 75 年 5 月 Energy Conversion

Devices, Inc.專任 Researcher 69 年 8 月至 71 年 6 月

1

相

關

經

歷

國科會工程處兼任諮詢委員 90 年 5 月至 93 年 4 月“Materials Chemistry and

Physics” (SCI Journal)兼任編輯委員 81 年 1 月至 93 年 12 月

國際電機電子工程學會(IEEE)中華民國分會兼任理事 86 年至 93 年

中華生命電磁科學學會兼任理事長 89 年 5 月至 93 年 4 月中國電機工程學會兼任常務監事 88 年至 91 年中國電機工程學會兼任監事 86 年至 87 年中國電機工程學會兼任理事 81 年至 83 年

中國工程學刊兼任編輯委員 85 年至 90 年國科會生物處兼任生物能場召集人 81 年至 88 年工研院電子所兼任顧問 80 年 1 月至 81 年 12 月國科會工程處兼任微電子小組召集

人 77 年 4 月至 82 年 3 月國科會光電小組兼任研究員 76 年 8 月至 78 年 7 月

工研院材料所兼任顧問 75 年 8 月至 77 年 7 月工研院能礦所兼任顧問 72 年 8 月至 75 年 7 月

註：1.請附最高學歷、教授或相當於教授資格之證件影本及重要相關經歷之服務證明影本。2

2.本表請打字填送並用 A4 紙張直式橫書，以 WORD 文書系統處理；字體請採「標楷體 12 點」。

3.本表若不敷使用請以 A4 紙張自行影印。全四頁第一頁

二、著作、作品及發明目錄[A] Referred Paper

1. C. M. Garner, C. Y. Su, W. A. Saperstein, K. G. Jew, S. C. Lee, G. L. Pearson and W. E. Spicer, 1979, Effect of GaAs or GaxAl1-xAs Oxide Composition on Schottky-Barrier Behavior", J. Appl. Phys., 50, pp. 3376-3381.

2. C. M. Garner, C. Y. Su, Y. D. Shen, S. C. Lee, G. L. Pearson, W. E. Spicer, D. D. Edwall, D. Miller and J. S. Harris, Jr., 1979, J. Appl. Phys., 50, pp. 3383-3388.

3. S. C. Lee and G. L. Pearson, 1980, "Band Readjustment" Effect with Applications to Solar Cells", IEEE Trans. Electron Devices, ED-27, pp.844-850.

4. S. C. Lee and G. L. Pearson, 1981, "Dark Current Reduction in AlxGa1-xAs-GaAs Heterojunction Diodes", J. Appl. Phys. 52, pp. 275-278.

5. S. C. Lee and G. L. Pearson, 1981, "Rectification in AlxGa1-xAs-GaAs N-n Heterojunction Devices", Solid State Electronics, 24, pp. 563-568.

6. S. C. Lee and G. L. Pearson, 1981, "Current-Voltage Characteristics of AlxGa1-xAs-GaAs Schottky Barriers and p-n Junctions", J. Appl. Phys., 52, pp. 5202-5206.

7. R. Tsu, J. Gonzalez-Hernando, S. S. Chao, S. C. Lee and K. Tanaka, 1982, "Critical Volume Fraction of Crystallinity in Percolation Process of Phosphorus Doped Amorphous Si:H:F Alloys", Appl. Phys. Lett., 40, pp. 534-535.

8. S. C. Lee and S. S. Chao, 1983, "Percolation Process in High Conductivity Phosphorus- Doped Amorphous Si:H:F Alloys", J. Chinese Inst. Engineers, vol. 6, pp. 245-249.

9. S. C. Lee, 1984, "Boron Contamination in the Intrinsic Layers of Amorphous Silicon Solar Cells", J. Appl. Phys., 55, pp. 4426-4429.

10. S. C. Lee, J. N. Kau and H. H. Lin, 1984, "Origin of High Offset Voltage in an AlGaAs/GaAs Heterojunction Bipolar Transistor", Appl. Phys. Lett., 45, pp. 1114-1116.

註：1.本表若不敷使用請以 A4 紙張自行影印。3

2.本表請打字填送並用 A4 紙張直式橫書，以 WORD 文書系統處理；字體請採「標楷體 12 點」。

全四頁第二頁14. H. H. Lin and S. C. Lee, 1985, "Super-Gain AlGaAs/GaAs Heterojunction Bipolar Transistors

using an Emitter Edge-Thinning Design", Appl. Phys. Lett., 47, pp. 839-841.15. J. A. Chen, S. C. Lee and T. I. Ho, 1985, "The Etching Characteristics of (100) GaAs by

K2S2O8 – H2O System", J. Electrochemical Soc., 132, pp. 3016-3019.

16. M. H. Shieh, H. H. Lin, S. C. Lee and Y. L. Chiou, 1985, "AlGaAs/GaAs Oxide Stripe Double Heterostructure Lasers", J. Chinese Inst. Engineers, vol. 8, pp. 191-199.

17. J. A. Chen, S. C. Lee and H. H. Lin, 1985, "AlGaAs/GaAs V-Groove Channeled Substrate Burried Heterostructure Laser Diodes", J. Chinese Inst. Engineers, vol. 8, pp. 311-316

18. S. C. Lee and H. H. Lin, 1986, "Transport Theory of the Double Heterojunction Bipolar Transistor based on Current Balancing Concept", J. Appl. Phys., 59, pp. 1688-1695.

19. S. C. Lee and T. B. Sun, 1986, "p-(Al,Ga)As/GaAs Modulation-doped Heterostructure Prepared by Liquid Phase Epitaxy", J. Phys. Chem. of Solids, 47, pp. 975-979.

20. H. H. Lin and S. C. Lee, 1986, "Determination of the AlGaAs Bandgap by Spectral Response Measurement", J. Chinese Inst. Engineers, vol. 9, pp. 317-322.

21. H. K. Chiou and S. C. Lee, 1986, "AlGaAs Buried Heterostructure Lasers", Proc. of National Science Council, Part A, vol. 11, No. 2, pp. 142-148.

22. C. Z. Chen and S. C. Lee, 1987, "Effect of Base-Collector potential spike on the Common-Emitter I-V Characteristics of AlGaAs Double Heterojunction Bipolar Transistors", IEEE Trans. Electron Devices, ED-34, pp.1463-1469.

23. J. K. Chen and S. C. Lee, 1987, "AlGaAs/GaAs Visible Ridge Waveguide Laser with Multicavity Structure", IEEE J. Quantum Electronics, QE-23, pp. 1283-1286.

24. S. W. Jan and S. C. Lee, 1987, "Preparation and Characterization of Indium-Tin-Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin", J. Electrochemical Society, 134, pp. 2056-2061.

25. W. J. Tzeng, H. K. Tsai and S. C. Lee, 1987, "Degradation and Annealing Characteristics of Amorphous Silicon Hydrogen Alloys after long time test", J. Appl. Phys., 62, pp. 1856-1860.

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26. H. K. Tsai, S. C. Lee and W. L. Lin, 1987, " The Amorphous SiC/Si Two Color Detector", IEEE Electron Device Lett., EDL-8, pp. 365-367.

27. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, "Design of AlGaAs Double Heterojunction Bipolar Transistors", J. Appl. Phys., 62, pp. 3976-3979.

28. C. W. Liu, S. L. Chen, J. P. Lay, S. C. Lee and H. H. Lin, 1987, "The Characteristics of Si-Doped GaAs Epilayers grown by Metal Organic Chemical Vapor Deposition (MOCVD) Using Silane Source", Appl. Phys. Lett., 51, pp. 1634-1636.

29. W. L. Lin, H. K. Tsai, S. C. Lee, W. J. Sah and W. J. Tzeng, 1987, "The Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Alloy by Thermal Annealing", Appl. Phys. Lett., 51, pp. 2112-2114.

30. H. K. Tsai and S. C. Lee, 1988, "Amorphous SiC/Si Three-Color Detector", Appl. Phys. Lett., 52, pp. 275-277.

31. J. G. Hwu, G. S. Lee, S. C. Lee and W. S. Wang, 1988, "Residual Charges Effect on the Annealing Behavior of Co-60 Irradiated MOS Capacitors", IEEE Trans. Nuclear Science, 35, pp. 960-965.

32. H. K. Tsai, W. L. Lin, W. J. Sah and S. C. Lee, 1988, "The Characteristics of Amorphous Silicon Carbide Hydrogen Alloy", J. Appl. Phys., 64, pp. 1910-1915.

33. C. Z. Chen, S. C. Lee and H. H. Lin, 1988, "The Hot Electron Effect in Double Heterojunction Bipolar Transistors: Theory and Experiment", Solid State Electronics, 31, pp. 1653-1656.

34. W. J. Tzeng and S. C. Lee, 1988, "New Model for the Staebler-Wronski Effect in an Amorphous Silicon Hydrogen Alloy", Appl. Phys. Lett., 53, pp. 2044-2046.

35. L. C. Suen and S. C. Lee, 1988, "AlGaAs/GaAs Ridge Waveguide Laser Array", J. Chinese Inst. Engineers, vol. 11, No. 3, pp. 261-267.

36. H. K. Liou, S. Y. Lan, C. W. Liu and S. C. Lee, 1988, "Heteroepitaxy of GaAs on Si by Metal Organic Chemical Vapor Deposition", Bulletin of College of Engineering, National Taiwan University, No. 43, pp. 75-91.

37. W. J. Sah, H. K. Tsai and S. C. Lee, 1989, "Physical and Electronic Structure of Amorphous Silicon Carbon Hydrogen Alloy", Appl. Phys. Lett., 54, pp. 617-619.

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38. T. S. Lay, S. C. Lee and H. H. Lin, 1989, "Y-Junction and Misaligned-Stripe Diode Laser Arrays with Nonuniform Refective Diffraction Coupler", IEEE J. Quantum Electronics, QE-25, pp.689-695.

39. J. A. Chen, J. H. Lee, S. C. Lee and H. H. Lin, 1989, "Abrupt Heterointerfaces in Al0.35Ga0.65As/ Al0.05Ga0.95As/Al0.35Ga0.65As Quantum Well Structure Grown by Liquid Phase Epitaxy", J. Appl. Phys., 65, pp. 4006-4009.

40. H. K. Tsai and S. C. Lee, 1989, "Theoretical Investigation of the C-V Relationship in an Amorphous Silicon p-n Junction", Solid State Electronics, 32, pp. 727-731.

41. H. K. Tsai and S. C. Lee, 1989, "Origin of Boron Contamination of the Intrinsic Amorphous Silicon Hydrogen Alloys in Glow Discharge System", J. Electrochemical Soc., 136, pp. 3011-3016.

42. T. P. Sun, S. C. Lee and S. J. Yang, 1989, "The Electrical Characteristics of Metal/SiO2/InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition", J. Vacuum Sci. & Tech. B, 7, pp. 1115-1121.

43. S. C. Lee, 1989, "The Generation of Chi by Stimulation Method", Bulletin of College of Engineering, National Taiwan University, No. 46, pp. 117-125. (in Chinese)

44. T. P. Sun, S. C. Lee and S. J. Yang, 1990, "The Current Leakage Mechanism in InSb p+n Diodes", J. Appl. Phys., 67, pp. 7092-7097.

45. W. J. Sah, S. C. Lee, H. K. Tsai and J. H. Chen, 1990, "Amorphous Silicon Edge Detectors for Application to Neural Network Image Sensors", Appl. Phys. Lett., 56, pp. 2539-2541.

46. J. L. Lin, W. J. Sah and S. C. Lee, 1990, "Theoretical Analysis of Channel Doped Amorphous Silicon Field-Effect Transistors", J. Appl. Phys., 68, pp. 1335-1339.

47. C. C. Wu, J. L. Ting, S. C. Lee and H. H. Lin, 1990, "Studies of Low Surface 2kT Recombination Current of the Emitter-Base Heterojunction of Heterojunction Bipolar Transistors", J. Appl. Phys., 68, pp. 1766-1771.

48. J. A. Chen, C. K. Wang, H. H. Lin, W. S. Wang and S. C. Lee, 1990, "Single and Mulitiple ALGaAs Quantum-well Structures Grown by Liquid-phase Epitaxy", J. Appl. Phys., 68, pp. 2140-2145.

49. S. J. Yih and S. C. Lee, 1990, "AlGaAs/GaAs Surface Emitting Laser Diode with Curved 6

Reflector", Electronics Letts., 26, pp. 1506-1507.

50. T. P. Sun, S. C. Lee, K. C. Lin, Y. M. Pang and S. J. Yang, 1990, "High Performance Metal/SiO2/InSb Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition", J. Appl. Phys., 68, pp. 3701-3706.

51. Y. H. Jan and S. C. Lee, 1990, " Verticle Monolithic Integration of a GaAs/AlGaAs V-Channeled Substrate Inner Stripe Laser Diode and a Heterojunction Bipolar Transistor", Appl. Phys. Lett. 57, pp. 2750-2752.

52 S. C. Lee, 1990, "The Qigong States and the Infrared Spectra of External "Qi"", Bulletin of College of Engineering, National Taiwan University, No. 49, pp. 97-108. (in Chinese)

53. W. J. Sah, J. L. Lin and S. C. Lee, 1991, "High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel", IEEE, Trans. Electron Devices, ED-38, pp. 676-678.

54. J. L. Lin, W. J. Sah and S. C. Lee, 1991, "Amorphous Silicon Thin Film Transistors with very High Field Effect Mobility", IEEE Electron Device Lett., EDL-12, pp. 120-121.

55. J. H. Chen, W. J. Sah and S. C. Lee, 1991, "Identification of Infrared Absorption Peaks of Amorphous Silicon Carbon Hydrogen Alloy Prepared Using Ethylene", J. Appl. Phys., 70, pp. 125-130.

56. Y. F. Chen, S. C. Lee, and J. H. Chen, 1991, "Existence of a Universal Low Energy Tail in the Photoluminescence of a-SiC:H Alloys", Solid State Comm., 79, pp. 175-177.

57. H. C. Lin, W. J. Sah and S. C. Lee, 1991, "The Crystalline PMOS Inverter Using Amorphous Thin Film Transistor as Active Load", Electron Lett., 27, pp. 2180-2181.

58. C. H. Chien, J. J. Tsuei, S. C. Lee, Y. C. Huang and Y. H. Wei, 1991, "Effect of Emitted Bioenergy on Biochemical Function of Cells", American J. of Chinese Medicine, vol. XIX, Nos. 3-4, pp. 285-292.

59. C. H. Chen and S. C. Lee, 1991, "Monolithic Integration of an AlGaAs/GaAs Surface Emitting Laser Diode and a Photodetector", Appl. Phys. Lett., 59, pp. 3592-3594.

60. S. C. Lee, and Y.C Chang, 1991, "The two Qigong States Characterized by Wave", J. Chinese Medicine, vol. 2, No. 1, pp. 30-46. (in Chinese)

61. C. C Wu, S. C. Lee, and H. H. Lin, 1992, "High Gain Npn AlGaAs/GaAs Heterojunction 7

Bipolar Transistors Prepared by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., 31, Part 2, pp., L385-L387.

62. J. S. Chou, W. J. Sah, T. C. Chang, J. C. Wang and S. C. Lee, 1992, "Microcrystalline Silicon Deposited by Glow Discharge Decomposition of Heavily Diluted Silane", Materials Chemistry and Physics, 32, pp. 273-279.

63. B. D. Liu, T. H. Shieh, M. Y. Wu, T. C. Chang, S. C. Lee, and H. H. Lin, 1992, "Stress Induced Outdiffusion of Be in p+ GaAs Prepared by Molecular Beam Epitary", J. Appl. Phys., 72, pp. 2767-2772.

64. H. C. Lin, W. J. Sah and S. C. Lee, 1992, "The Common Gate CMOS Inverter with Amorphous Silicon Thin Film Transistor on Top of Crystalline PMOS", Solid State Electronics, Vol. 35, No. 12, pp. 1709-1712.

65. H. C. Lin, W. J. Sah and S. C. Lee, 1992, "The Vertical Integration of Crystalline NMOS and Amorphous Orientational Edge Detector", IEEE Trans. Electron Devices, ED-39, pp. 2810-2812.

66. C. C. Wu and S. C. Lee, 1992, "Emitter Composition and Geometry Related Surface Recombination Current of AlGaAs/GaAs Heterojunction Bipolar Transistors", J. Appl. Phys., 72, pp. 5483-5488.

67. K. C. Lin and S. C. Lee, 1992, "The Structural and Optical Properties of a-SiNx:H Prepared by Plasma Enhanced Chemical Vapor Deposition", J. Appl Phys., 72, pp. 5474-5482.

68. S. Z. Chang, T. C. Chang and S. C. Lee, 1993, "The Growth of Highly Mismatched InxGa1-xAs (0.28≦x≦1) on GaAs by Molecular Beam Epitaxy", J. Appl. Phys., 73, pp. 4916-4926.

69. T. H. Shieh and S. C. Lee, 1993, "Observation of Deep Donor Center Related Tunneling Peak in the AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.4≦x≦0.5) Resonant Tunneling Diodes", Appl. Phys. Lett., 63, pp. 654-656.

70. C. H. Lin, S. C. Lee, and Y. F. Chen, 1993, "Strong Room-temperature Photoluminescence of Hydrogenated Amorphous Silicon Oxide and its correlation to Porous Silicon", Appl. Phys. Lett,. 63, pp. 902-904.

71. T. H. Shieh and S. C. Lee, 1993, "Resonant Tunneling of X Band Electrons from AlAs through GaAs/AlAs/GaAs Double Barrier Structure", Appl. Phys. Lett., 63, pp. 1219-1221.

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72. T. H. Shieh, C. C. Wu and S. C. Lee, 1993, "Observation of X Band Electron Quantum Interference in AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (x≧0.4) Resonant Tunneling Diodes", J. Appl. Phys., 74, pp. 4229-4232.

73. S. Z. Chang, S. C. Lee, H. P. Shiao, W. Lin and Y. K. Tu, 1993, "Novel Binary Buffer Layer for Applications in the Heteroepitaxy of Highly Mismatched In0.53Ga0.47As Epilayers Grown on GaAs Substrates", Appl. Phys. Lett., 63, pp. 2417-2419.

74. J. S. Chou, J. H. Wei and S. C. Lee, 1993, "Enhanced Phosphorus Diffusion During the Glow Discharge Deposition of N-type Amorphous Silicon Hydrogen Alloy", Appl. Phys. Lett., 63, pp. 3060-3062.

75. S. Z. Chang, T. C. Chang, J. L. Shen, S. C. Lee, and Y. F. Chen, 1993,"Material and Electrical Properties of Highly Mismatched InxGa1-xAs on GaAs by Molecular Beam Epitaxy", J. Appl. Phys., 74, pp. 6912-6918.

76. T. H. Shieh and S. C. Lee, 1993, "Transport Mechanism of X Band Electrons in AlAs Electrode through GaAs/AlAs/GaAs Structure by varying GaAs Well Thickness", Appl. Phys. Lett., 63, pp. 3350-3352.

77. B. D. Liu, S. C. Lee, K. C. Liu, T. P. Sun and S. J. Yang, 1993, "InSb p-channel Metal-Oxide-Semiconductor Field Effect Transistor Prepared by Photoenhanced Chemical Vapor Deposition", Appl. Phys. Lett., 63, pp. 3622-3624.

78. S. C. Lee and C. R. Shih, 1993, "The Brain Wave Characteristics and Electromagnetic Phenomenon of Psychics", J. Chinese Medicine, vol. 4, No. 2, pp. 125- 136. (in Chinese)

79. S. Z. Chang, S. C. Lee, C. R. Chen and L. J. Chen, 1994, "The Dislocation Generation Mechanisms of InxGa1-xAs (0 ≦ x ≦ 1) Epilayers Grown on (100) InP Substrates by Molecular Beam Epitaxy", J. Appl. Phys., 75, pp. 1511-1516.

80. J. S. Chou and S. C. Lee, 1994, "An Improved Process for Liquid Phase Deposition of Silicon Dioxide," Appl. Phys. Lett., 64, pp. 1971-1973.

81. K. C. Lin, W. J. Sah and S. C. Lee, 1994, "The Hydrogenated Amorphous Silicon Active Hollow Four Quadrant Orientation Detector for Application to Neural Network Image Sensors", IEEE Trans. Electron Devices, ED-41, pp. 666-670.

82. C. H. Lin, S. C. Lee, and Y. F. Chen, 1994, "Morphologies and Photoluminescence Mechanism of Porous Silicon under Different Etching and Oxidation Conditions", J. Appl.

9

Phys., 75, pp. 7728-7736.

83. J. H. Wei and S. C. Lee, 1994, "The Electrical and Optical Properties of Implanted Amorphous Silicon", J. Appl. Phys., 76, pp. 1033-1040.

84. J. L. Shen, I. M. Chang, Y. M. Shu, Y. F. Chen, S. Z. Chang and S. C. Lee, 1994, "Raman-Line-Shape Study of InxGa1-xAs on InP and GaAs Substrate", Phys. Rev. B, 50, pp. 1678-1683.

85. J. S. Chou and S. C. Lee, 1994, "The Initial Growth Mechanism of Silicon Oxide by Liquid Phase Deposition", J. Electrochemical Society, 141, pp. 3214-3218.

86. W. S. Liao, C. H. Lin and S. C. Lee, 1994,"Oxidation of Silicon Nitride Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature", Appl. Phys. Lett., 65, pp. 2229-2231.

87. Y. F. Chen, J. L. Shen, I. M. Chang, S. Z. Chang and S. C. Lee, 1995, "Photoluminescence Study of Highly Mismatched In 0.53 Ga0.47 As Epilayers grown on InP-coated GaAs Substrates

", J. Appl. Phy., 77, pp. 1040-1042.

88. J. S. Chou and S. C. Lee, 1995, "Effect of Porosity on Infrared Absorption Spectra of Silicon Dioxide", J. Appl. Phys., 77, pp. 1805-1807.

89. B. D. Liu, S. C. Lee, K. C. Liu, T. P. Sun and S. J. Yang, 1995, "Detailed Investigation of InSb p-channel Metal-Oxide-Semiconductor Field Effect Transistor Prepared by Photo-Enhanced Chemical Vapor Deposition", IEEE Trans. Electron Devices, ED-42, pp. 795-803.

90. H. D. Su, S. Z. Chang, S. C. Lee, and T. P. Sun, 1995, "High temperature InAs Infrared Detector Based on Metal-Insulator-Semiconductor structure", Electronics Lett., 31, pp. 918-920.

91. J. L. Shen, Y. D. Dai, Y. F. Chen, S. Z. Chang and S. C. Lee, 1995, "Cyclotron-Resonance Studies in Relaxed InxGa1-xAs (0≦x≦1) Epilayers, Phys. Rev. B, 51, pp. 17648-17653

92. K. C. Lin and S. C. Lee, 1995, "Active Hollow Four Quandrant Orientation Detector Array for Application to Pattern Recognition", IEEE Trans. Electron Devices, ED-42, pp. 1233-1239.

93. M. S. Chen, J. S. Chou and S. C. Lee, 1995, "Planarization of Amorphous Silicon Thin Film Transistors by Liquid Phase Deposition of Silicon Dioxide", IEEE Trans. Electron Devices, ED-42, pp. 1918-1923.

94. K. C. Lin and S. C. Lee, 1995,"A Novel Process for Growing Gate Aluminum Oxide in 10

Amorphous Silicon Thin Film Transistor", J. Electrochemical Society, 142, pp. L228-L229.

95. J. L. Lin and S. C. Lee, 1995, "Amorphous Silicon Thin Film Transistors", J. Chinese Inst. Engineers, vol. 18, No. 6, pp. 451-460.

96. S. Z. Chang, T. C. Chang, and S. C. Lee, 1996,"A Method to Tune the Island Size and Improve the Uniformity for the in situ Formation of InGaAs Quantum Dots on GaAs", Applied Surface Science, 92, pp. 70-73.

97. C. L. Yeh and S. C. Lee, 1996,"Structure and Optical Properties of Amorphous Silicon Oxynitride". J. Appl. Phys., 79, pp. 656-663.

98. J. S. Chou and S. C. Lee, 1996, "Application of Liquid Phase Deposited Silicon Dioxide to Metal Oxide-Semiconductor Capacitor and Amorphous Silicon Thin Film Transistor", IEEE Trans. Electron Devices, ED-43, pp. 599-604.

99. B. D. Liu, S. C. Lee and T. P. Sun, 1996, " InSb Integrated Photo-MOSFET Fabricated by Photo-enhanced Chemical Vapor Deposition ", Optical and Quantum Electronics, 28, pp. 1277-1286.

100. W. S. Liao and S. C. Lee, 1996, " Water-induced Room-Temperature Oxidation of Si-H and Si-Si Bonds in Silicon Oxide ", J. Appl. Phys. 80, pp. 1171-1176.

101. K. C. Lin and S. C. Lee, 1996, " Angle Position Detection Based on Amorphous Silicon Four Quadrant Orientation Detector ", Jpn. J. Appl. Phys. 35, pp. 5618- 5624.

102. R. M. Lin, S. F. Tang, S. C. Lee, C. H. Kuan, G. S. Chen, T. P. Sun and J. C Wu, 1996, " Room Temperature Unpassivated InAs p-i-n Photodectors Grown by Molecular Beam Epitaxy ", IEEE Trans. Electron Devices, ED-43, pp. 209- 213.

103. S. C. Lee, 1996, "Possible Mechanism for Solid to Generate Macroscopic Quantum Wave", Chinese Journal of Somatic Science, vol. 6, No. 3, pp. 111-113. (in Chinese)

104. R. M. Lin and S. C. Lee, 1997, "Novel Method for Monitoring the Surface Roughness during Molecular Beam Epitaxy", Jpn. J. Appl. Phys. 36, pp. 984-986.

105. B. D. Lin, R. M. Lin, S. C. Lee and T. P. Sun, 1997, "InAs Room Temperature Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy", J. Vac. Sci. & Tech., B, 15, pp. 321-324.

11

106. W. S. Liao and S. C. Lee, 1997, "Interfacial Interaction Between Al-1% Si and Phosphorus Doped Hydrogenated Amorphous Si Alloy at Low Temperature", J. Appl. Phys. 81, pp. 7793-7797.

107. W. S. Liao and S. C. Lee, 1997, "Novel Low-Temperature Double Passivation Layer in Hydrogenated Amorphous Silicon Thin Film Transistors", Jpn. J. Appl. Phys. 36, pp. 2073-2076.

108. J. H. Wei and S. C. Lee, 1997, "The Structure Change of Liquid Phasd Deposited Silicon Oxide by Water Dilution", J. Electrochem Soc., 144, No. 5, pp 1870-1874.

109. S. C. Lee and I. Bock-Mobius, 1997, "Untersuchungen des Qigong-Zustands mit Hilfe von EEG-Messungen", ErfahrungsheilKunde, vol. 4, pp. 229-235(in German).

110. J. H. Wei, M. S. Sun and S. C. Lee , 1997, " A Possible Mechanism for Improved Light- induced Degradation in Deuterated Amorphous Silicon Alloy", Appl. Phys. Lett., 71, pp. 1498-1500.

111. S. C. Lee and C. R. Shih, 1997," Character Recognition by Fingers", J. Chinese Medicine, vol. 8, No. 1,pp. 1-15. (in Chinese)

112. Y. T. Dai, Y. T. Liu, R. M. Lin, M. C. H. Liao, Y. F. Chen, S. C. Lee and H. H. Lin, 1997, “Photoluminescnce and Photothermal Deflection Spectroscopy of InAs Quantum Dot Superlattices Grown on GaAs by Molecular Beam Epitaxy”, Jpn. J. Appl. Phys., 36, pp. L811-L814.

113. Y. T. Dai, J. C. Fan, Y. F. Chen, R. M. Lin, S . C. Lee , and H. H. Lin, 1997, “Temperature dependence of photoluminescence spectra in InAs/GaAs quantum dot superlattices with large thicknesses”, J. of Appl. Phys., 82 (9), pp. 4489-4492.

114. J. H. Wei and S. C. Lee , 1998, "The Retardation of Aluminum-Amorphous Silicon Interaction by Phosphine Plasma Treatment", J. Vac. Sci. & Tech. A, 16, pp. 587-589.

115. Y. P. Chou and S. C. Lee , 1998, "Structural , Optical and Electrical Properties of Hydrogenated Amorphous Silicon Germanium Alloys", J. Appl. Phys., 83, pp. 4111- 4123.

116. S. C. Lee , 1998, "The Mechanism of Character Recognition by Fingers (Third Eye) with Associated Physiological Measurements", Chinese Journal of Somatic Science, vol. 8, No. 3, pp. 105-113. (in Chinese)

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117. Y. T. Dai, J. L. Shen, Y. F. Chen, S. Z. Chang and S. C. Lee , 1998, " Nonparabolicity and Effective Masses of Conduction Electron in InxGa1-xAs Alloys", Chinese J. of Physics, 36, pp. 20-26.

118. J. H. Wei and S. C. Lee , 1999, " Improved Stability of Deuterated Amorphous Silicon Thin Film Transistors", J. Appl. Phys. 85, pp. 543-550.

119. J. H. Yeh and, 1999, "Amorphous-Silicon Thin Film Transistor with Liquid phase Deposition of Silicon Dioxide Gate Insulator", IEEE Electron Device Lett., 20, pp. 138-139.

120. A. Shih, S. C. Lee and C.T. Chia, 1999, " Evidence for Coupling of Si-Si Lattice Vibration and Si-D Wagging Vibration in Deuterated Amorphous Silicon", Appl. Phys. Lett., 74, pp. 3347-3349.

121. S. C. Lee , C.L. Sun, J. C. Shen and J. Z. Ho, 1999, " Revival of Peanut by Psychokinesis", Chinese Journal of Somatic Science, vol. 9, No. 2 , pp. 52-54. (in Chinese)

122. S. C. Lee , 1999, "Unification of Mind and Material – The Macroscopic Quantum Phenomena", Chinese Journal of Somatic Science, vol. 9. No. 3, pp. 124-128 (in Chinese)

123. J. L. Yeh and S. C. Lee , 1999, "High Field-effect Mobility Deuterated Amorphous Silicon Thin Film Transistors Based on the Substitution of Hydrogen with Deuterium", IEEE Electron Device Lett. 20, pp. 415-417.

124. A. Shih and S. C. Lee, 1999, "Hydrogenated Amorphous Silicon with Substrate Dependent Structure", J. Non-Cryst Solids, 260, pp. 245-247.

125. J. L. Yeh, H. L.Chen, A. Shih and S. C. Lee, 1999, "Formation of Si Nanocluster in Amorphous Silicon Thin Films by Excimer Laser Annealing", Electronics Lett., 35, pp. 2058-2059.

126. S. C. Lee, C. I. Sun, J. C. Shen and Y. C. Lin, 1999, “Microsculpture by Psychokinesis”, Chinese Journal of Somatic Science, vol. 9, No. 4, pp. 153-155 (in Chinese).

127. Y. P. Chou and S. C. Lee, 2000, "Evidence for the Void Size Related IR Absorption Frequency Shifts in Hydrogenated Amorphous Germanium Films", Solid State Comm., 113, pp. 73-75.

13

128.. S. C. Lee, C. T. Chen and D. Tang, 2000, "The Observation of Extraordinary Phenomena when Special Keywords were Tested in the Experiment on Character Recognition by Fingers", Buddhism and Science, 1, pp. 8-17. (in Chinese)

129. A. Shin, J. L. Yeh and S. C. Lee, 2000, "Structural and Electronic Differences between Deuterated and Hydrogenated Amorphous Silicon", J. Appl. Phys., 88, pp. 1684-1687.

130. A. Shin, C. Y. Meng and S. C. Lee, 2000, "Mechanism for Pillar-shaped Surface Morphology of Polysilicon prepared by Excimer Laser Annealing", J. Appl. Phys., 88, pp. 3725-3733.

131. Y. C. Liao, S. Y. Lin and S. C. Lee, 2000, "Spherical SiGe Quantum Dots Prepared by Thermal Evaporation Method", Appl. Phys. Lett., 77, pp. 4328-4329.

132. D. Tang, S. C. Lee and L. C. Hsu, 2001, “Comparison between Normal Color Sense and Extrasensory Perception Color Sense in Color Adaptation Task: a Case Study”, Buddhism and Science, 2, pp. 21-28. (in Chinese).

133. S. F. Tang, S. Y. Lin and S. C. Lee , 2001, “Near Room Temperature Operation of InAs/GaAs Quantum Dot Infrared Photodetector”, Appl. Phys. Lett., 78, pp. 2428-2430.

134. S. Y. Lin, Y. R. Tsai, and S. C. Lee , 2001, “High Performance InAs/GaAs Quantum Dot Infrared Photodetector with Single-Sided Al0.3Ga0.7As Blocking Layer”, Appl. Phys. Lett., 78, pp. 2784-2786.

135. C. H. Chen, Y. F. Chen, A. Shih, S. C. Lee and H. X. Jiang, 2001, “Zone-folding Effect on Optical Phonon in GaN/Al0.2Ga0.8N Superlattices”, Appl. Phys. Lett., 78, pp. 3035-3037.

136. A. Shih, S. H. Yeh, S. C. Lee and T. R. Yang, 2001, “Structural Differences between Deuterated and Hydrogenated Silicon Nitride/Oxynitride”, J. Appl. Phys., 89, pp. 5355-5361.

137. S. D. Liu, S. C. Lee , and M. Y. Chern, 2001 “Hydrogenated Amorphous Silicon-Germanium PIN X-ray Detector”, IEEE Trans. Electron Devices, 48, pp. 1564-1567.

138. S. F. Tang, S. Y. Lin and S. C. Lee , 2001, “InAs Quantum Dots on (001) GaAs Substrate with Two Groups of Different Sizes under Arsenic Shutter Closed Condition”, J. of Nanoparticle Research, 3, pp. 489-492.

139. S. Y. Lin, Y. J. Tsai, and S. C. Lee , 2001, “The Comparison of InAs/GaAs Quantum Dot Infrared Photodetector and GaAs/(AlGa)As Superlattice Infrared Photodetector”, Jpn. J

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Appl. Phys., 40, L1290-L1292.

140. S. C. Lee and L. S. Chang, 2001, “The Connection Model between Keywords and Information Field in Finger Reading Experiments”, Buddhism and Science, 2, No. 2, pp.60-77. (in Chinese)

141. C. W. Lin, S. Y. Lin and S. C. Lee , 2002, “The Structural and Optical Properties of Germanium Nanoparticles”, J. Appl. Phys., 91, pp. 1525-1528.

142. S. F. Tang, S. Y. Lin and S. C. Lee , 2002, “Integral and Fractional Charge Filling in InAs/GaAs Quantum Dot p-i-n Diode by Capacitance-Voltage Measurement”, J. Appl. Phys., 91., pp. 6700-6703.

143. C. W. Lin, S. Y. Lin and S. C. Lee , 2002, “The Structural and Optical Properties of Silicon-Germanium Alloy Nanoparticles”, J. Appl. Phys., 91, pp. 2322-2325.

144. C. H. Chen, Y. F. Chen, A. Shih, and S. C. Lee, 2002, “Nondegrading Photoluminescence of Porous Silicon by Deterated Plasma Treatment”, Phys. Rev. B, 65, p. 195307.

145. S. F. Tang, S. Y. Lin and S. C. Lee, 2002, “InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) with Double Al0.3Ga0.7As Blocking Barriers”, IEEE Trans. Electron Devices, ED-49, pp. 1341-1347.

146. S. C. Lee , D. Tang, C. T. Chen and S. C. Feng, 2002, “Finger Reading: Exploring the Information Field”, The International Journal of Healing and Caring, Vol. 2, No. 2.(On-line Journal, http://www.ijhc.org).

147. S. C. Lee, 2002, “Dialogue with the Spirit”, Buddhism and Science, 3, No. 2, pp. 68-79. (in Chinese)

148. S. D. Liu, A. Shih, S. D. Chen and S. C. Lee, 2003, “Stability Improvement of Deuterated Amorphous Silicon Thin Film Transistors Characterized by Modified Schottky Contact Gated-Four-Probe Method”, J. Vacuum Science and Technology B, 21, pp. 677-682.

149. W. C. Hsueh and S. C. Lee, 2003, “The Fabrication of Polysilicon Thin Film Transistors by Copper Induced Crystallization”, IEEE Trans. Electron Devices, ED-50, pp. 816-821.

150. S. C. Lee, 2003, “Traveling Around the Visible and Invisible Worlds”, Buddhism and Science, 4, No. 2, pp. 84-94. (in Chinese)

151. S. Y. Lin, Y. J. Tsai and S . C . Lee , 2003, “Transport Characteristics of InAs/GaAs Quantum-15

Dot Infrared Photodetectors”, Applied Physics Letters, 83, pp. 752-754.

152. S. D. Liu and S. C. Lee, 2004, ”Large Grain Poly-Si (~10 μm) Thin Film Transistors Prepared by Excimer Laser Annealing through a Thick SiON Absorption Layer”, IEEE Trans. Electron Devices, ED-51, pp. 166-171.

153. T. C. Lin, S. C. Lee and H. H. Cheng, 2004, “Silicon-Germanium Spherical Quantum Dot Infrared Photodetectors (QDIP) Prepared by the Combination of Bottom-up and Top-down Technologies”, J. Vacuum Science and Technology, B 22 , pp. 109-115.

154. S. Y. Lin, Y. J. Tsai and S. C . Lee , 2004, “The Effect of Silicon Dopant on The Performance of InAs/GaAs Quantum-Dot Infrared Photodetectors”, Jpn. J Appl. Phys., 42, pp. L167-L169.

155. S. D. Chen, C. Y. Tsai and S. C. Lee, 2004, “Growth of InGaAs-capped InAs Quantum Dots Characterized by Atomic Force Microscope and Scanning Electron Microscope”, J. Nanoparticle Research, (Accepted)

156. J. Hung and S. C. Lee, 2004, “The Structural and Optical Properties of Gallium Arsenic Nanoparticles”, J. Nanoparticle Research, (Accepted)

[B] Conference Paper (International)

1. S. C. Lee and G. L. Pearson, 1979, "Band-Readjustment Effect Between Two Closely Spaced Junctions", IEEE Device Research Conf., Boulder, Colorado.

2. S. C. Lee and G. L. Pearson, 1980, "Dark Current Reduction in AlGaAs-GaAs Heterojunc tion Diodes", IEEE Device Research Conf., Ithaca, New York.

3. S. C. Lee, 1984, "Photodetectors for Wavelength Division Multiplexing Technology", Technical Digest of R.O.C.-Japan Workshop on Optoelectronics, Tokyo, Japan, p. 65.

4. J. N. Kau and S. C. Lee, 1984, "Observation of Interfacial Potential Spike Height in AlGaAs/GaAs Heterojunction Bipolar Transistor", International Conf. on Electron Devices and Materials, Hsinchu, Taiwan, p.321.

5. H. H. Lin and S. C. Lee, 1984, "Dual Wavelength Photodetector and Its Application on Wavelength Division Multiplexing Technology", International Conf. on Electron Devices and Materials, Hsinchu, Taiwan, p.393.

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6. H. M. Sheu, S. C. Lee and S. Y. Lan, 1984, "Characterization of AlxGa1-xAs Epilayers", International Conf. on Electron Devices and Materials, Hsinchu, Taiwan, p.417.

7. S. C. Lee, H. C. Lee, M. F. Dai, F. C. Hwang and C. Y. Nee, 1986, "Photoluminescence of Sn-doped AlxGa1-xAs grown by Liquid Phase Epitaxy", International Symposium on Compound Semiconductor Science and Technology, Hsinchu, Taiwan.

8. S. C. Lee, C. Z. Chen and H. H. Lin, 1986, "New Transport Theory of the Homo and Heterojunction Bipolar Transistors and Its Applications", International Symposium on Compound Semiconductor Science and Technology, Hsinchu, Taiwan.

9. S. C. Lee, H. K. Liou, S. Y. Lang and C. W. Liu, 1986, "Heteroepitaxy of GaAs on Si by Metal-Organic Chemical Vapor Deposition (MOCVD)", International Conference on State-of-the-Art Program on Compound Semiconductor (SOTAPOCS V), San Diego, California.

10. W. J. Tzeng, H. K. Tsai and S. C. Lee, 1987, "Long-time Repeated Photodegradation Test of Amorphous Silicon Hydrogen Alloys", International Conf. on Stability of Amorphous Silicon Alloy Materials and Devices, Palo Alto, California.

11. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, "Engineering on npn Double- Heterojunction Bipolar Transistors", SPIE's Advances in Semiconductors and Semiconductor Structure, Bay Point, Florida.

12. H. K. Tsai and S. C. Lee, 1987, "The a-SiC:H/a-Si:H Two and Three-Color Detectors with High Rejection Ratio", International IEEE Electron Device Meeting (iedm), Washington, D.C., U.S.A..

13. W. J. Sah, H. K. Tsai and S. C. Lee, 'Identification of Physical and Electronic Structure of Amorphous Silicon (Carbon) Hydrogen Alloy by Thermal Annealing", International Conf. on Solid State Devices and Materials (SSDM), Tokyo, Japan, December 1988. (Proc., pp.243-246)

14. S. C. Lee and S. Jan, "The Theory of Deep Donor State in AlxGa1-xAs", International Conf. on Solid State Devices and Materials, Tokyo, Japan, December 1988. (Proc., pp.251-254)

15. W. J. Tzeng and S. C. Lee, "The Initiation of Photodegradation in a-Si:H p-i-n Solar Cells", International Electronic Devices and Materials Symposium, Kaohsiung, Taiwan, R.O.C., June 1988. (Proc., 385-389)

16. J. A. Chen, S. C. Lee and H. H. Lin, "Al0.35Ga0.65As/Al0.05Ga0.95As Quantum Well Structure 17

grown by Liquid hase Epitaxy", International Electronic Devices and Materials Symposium, Kaohsiung, Taiwan, R.O.C., June 1988. (Proc., pp.92- 96)

17. W. J. Sah and S. C. Lee, "Doping Induced Structural Change in Amorphous Silicon (Carbon) Hydrogen Alloy", Second International Conference on Amorphous and Crystalline Silicon Carbide and Related Materials, Santa Clara, California, U.S.A. May 1988.

18. T. P. Sun, S. C. Lee and S. J. Yang, "The Origin of Instability in Metal/SiO2/InSb MOS Capacitor Fabricated by Photo-Enhanced Chemical Vapor Deposition", SPIE's Symposium on Infrared Applied Science and Engineering, Orlando, Florida, U.S.A., June 1989.

19. W. J. Sah, S. C. Lee and J. H. Chen, 1989, "Amorphous Silicon Edge Detector for Application to Electronic Eyes", IEEE International Electron Device Meeting (iedm), Washington, U. S. A.

20. T. P. Sun, S. C. Lee and S. J. Yang, 1990, "Low Leakage Current and High Breakdown Voltage P+n Diode", SPIE's Symposium on Infrared Applied Science and Engineering, Orlando, Florida.

21. Y. H. Jan and S. C. Lee, 1990, "A Vertical Monolithic Integration of a GaAs/AlGaAs V- Channeled Substrate Inner Stripe Laser Diode and a Heterojunction Bipolar Transistor", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 199- 202.

22. S. J. Yih, and S. C. Lee, 1990, "An AlGaAs/GaAs Surface Emitting Laser Diode with Curved Reflector", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 101-104.

23. W. J. Sah, and S. C. Lee, 1990, "Amorphous Silicon Edge and Orientation Detectors", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 512- 515.

24. C. C. Wu, S. C. Lee, and H. H. Lin, 1990, "The Transport Mechanism for Base Current in an AlGaAs/GaAs Heterojunction Bipolar Transistor", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 192-194.

25. P. D. Liu, S. C. Lee, C. Y. Chen and B. J. Lee, 1990, "Identification of Electron to Heavy Hole Band-to-Band Transition in the Photoluminescence Spectra of AlGaAs/GaAs Quantum Well", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 64-67.

26. J. L. Lin, W. J. Sah, and S. C. Lee, 1990, "Amorphous Silicon Thin Film Transistors with5.1 cm2/V-sec Field Effect Mobility", International Electronic Devices and Material Symposium, Hsinchu, Taiwan, pp. 432-434.

18

27. W. J. Sah and S. C. Lee, 1990, "Amorphous Silicon Four-Quadrant Orientation Detector (FOQUOD) for Application to Neural Network Image Sensors", 1990 IEEE International Electron Device Meeting (iedm), San Fracisco, California, U.S.A., Technical Digest, pp. 291-294.

28. P. D. Liu, T. H. Shieh, M. Y. Wu, T. C. Chang, S. C. Lee, and H. H. Lin, 1991, "Heavily Doping of GaAs with Be for Application to p+-type AlGaAs/GaAs Heterojunction Infrared Detector", International Conf. on Solid State Devices and Materials (SSDM), Yokohama, Japan.

29. S. C. Lee, 1991, "The Two Qigoing States Characterized by Brain Wave", International Congress on Traditional Medicine, Beijing, China.

30. J. L. Lin and S. C. Lee, 1991, "The Amorphous Silicon Thin Film Transistors With High Field Effect Mobility ", Proc. 1991 International Semiconductor Device Research Symposium, Charlottesville, Virginia, U.S.A., pp. 517-520. (Invited Talk)

31. S. C. Lee and W. J. Sah, 1992, "Applications of a-Si:H to Neural Network Image Sensor", 6th International Conf. on Solid Films and Surfaces, Paris, France. (Invited Talk)

32. C. C. Wu, S. S. Lu, S. C. Lee, F. Williamson and M. I. Nathan, 1992, "High Perform ance In0.49Ga0.51 P/GaAs Tunneling Emitter Bipolar Transistor Grown by Gas Source Molecular

Beam Epitaxy", International Conf. on Solid State Devices and Materials (SSDM), Tsukuba Science City, Japan.

33. S. C. Lee and W. J. Sah, 1992, "Amorphous Silicon Four Quadrant Orientation Detector Array for Application in Pattern Recognition", Third International Conf. on Solid State and Integrated Circuit Technology, Beijing, China. (Invited Talk)

34. S. C. Lee, 1992, "Amorphous Thin Film Transistor", 1992 International Electron Devices and Materials Symposium (EDMS), Taipei, Taiwan. (Invited Talk)

35. S. Z. Chang, T. C. Chang and S. C. Lee, 1992, "Redefinition of Critical Thickness in Highly Mismatched InxGa1-xAs/Gats Quantum Wells grown by MBE", 1992, International EDMS, Taipei, Taiwan.

36. T. H. Shieh, C. C. Wu and S. C. Lee, 1992, " and X Bands Cossover Effect on the AlxGa1-

xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.39≦x≦0.45) Resonant Tunneling Diodes", 1992 International EDMS, Taipei, Taiwan.

19

37. S. Z. Chang, T. C. Chang and S. C. Lee, 1992, "Growth Mode at the Inital Stage of InxGa1-xAs (0.28≦x≦1) on (100) GaAs by Molecular Beam Epitaxy", International Symp. on Optoelectronics in Computers, Communications and Control (OCCC '92), Hsinchu, Taiwan.

38. S. Z. Chang, S. C. Lee, H. P. Shiao, W. Lin and Y. K. Tu, 1993, "A New Binary Buffer Layer Concept for applications in the Heteroepitaxy of Highly Mismatched In0.53Ga0.47As on GaAs", 1993 International Conf. Solid State Device and Materials (SSDM '93), Chiba, Japan, Extended Abstract, pp.736-738.

39. T. H. Shieh and S. C. Lee, 1993, "Observation of Deep Donor Center Related Tunneling Peak in the AlxGa1-xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.4≦x≦0.5) Resonant Tunneling Diodes", 1993 International Conf. Solid State Device and Materials (SSDM '93),Chiba, Japan, Extended Abstract, pp.333-335.

40. T. H. Shieh and S. C. Lee, 1993, "Transport Mechanism of X Band Electrons in AlAs Electrode Through GaAs/AlAs/GaAs Structure", Proc. 1993 International Semiconductor Device Research Symposium, Charlottesville, Virginia, U.S.A., pp.881-884.

41. S. Z. Chang and S. C. Lee,1994, "The Dislocation Generation Mechanism of InxGa1-xAs

Epilayers (0.32≦x≦1) Grown on InP Substrates by Molecular-Beam Epitaxy", Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, U.S.A.

42. J. L. Shen, S. Z. Chang S. C. Lee, and Y. F. Chen, 1994, "Study of Asymmetric Broadening of Raman Scattering in InxGa1-xGa1-xAs/InP and InxGa1-xAs/GaAs Epilayers", Sixth International Conference on Indium Phosphide and Related Materials, Santa Barbara, California, U.S.A.

43. B. D. Liu, S. C. Lee, K. C. Liu, T. P. Sun and S. J. Yang, 1994, "High Breakdown Voltage InSb p-channel MOSFET prepared by Photo-Enhanced Chemical Vapor Deposition", International Symp. on SPIE's International Symposium on OE/Aerospace sensing, Orlando, Florida, U.S.A.

44. W. S. Lu, J. G. Hwu, J. S. Chou, S. C. Lee, 1994, "Radiation Hardness on Fluorinated Oxides Prepared by Liquid Phase Deposition Method Following Rapid Thermal Annealing Treatment", 1994 International EDMS, Hsinchu, Taiwan.

45. T. H. Shieh, S. C. Lee, 1994, "Identification of Tunneling Peaks in the GaAs/AlAs/GaAs Resonant Tunneling Diode by Magnetic Field", 1994 International EDMS, Hsinchu, Taiwan.

20

46. B. D. Liu, S. C. Lee, K. C. Liu, T. P. Sun, S. J. Yang, 1994, "InSb Photo-MOSFET Fabricated by Photo-Enhanced Chemical Vapor Deposition", 1994 International EDMS, Hsinchu, Taiwan.

47. K. C. Lin, S. C. Lee, 1994, "Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern Recognition", 1994 International EDMS, Hsinchu, Taiwan.

48. C. H. Lin, S. C. Lee, Y. F. Chen, 1994, "Photoluminescence Mechanisms in Porous Silicon", 1994 International EDMS, Hsinchu, Taiwan.

49. J. H. Wei and S. C. Lee, 1994, "The Electrical and Optical Properites of Phosphorus Implanted Amorphous Silicon Hydrogen Alloy", 1994 International EDMS, Hsinchu, Taiwan.

50. J. S. Chou and S. C. Lee, 1994, "A New Process for Liquid Phase Deposition of Silicon Oxide and Its Application in Amorphous Silicon Thin Film Transistor", 1994 International EDMS, Hsinchu, Taiwan.

51. K. C. Lin and S. C. Lee, 1994, "Active Hollow Four Quadrant Orientation Detector Array for Application to Pattern Recognition", 1994 International Conf. on Solid State Device and Materials (SSDM '94), Yokohama, Japan.

52. S. Z. Chang, T. C. Chang and S. C. Lee, 1994, "A New Method to Tune the Island Size and Improve the Uniformity for the In-Situ Formation of InGaAs Quantum Dots on GaAs", 7th International Conf. on Solid Films and Surfaces, Hsinchu, Taiwan.

53. M. S. Chen, J. S. Chou and S. C. Lee, 1994, "Gate Planarization of Amorphous Silicon Thin Film Transistor with Liquid Phase Deposition Process" Second Symp. on Thin Film Transistor Technologies, Miami Beach, Florida, The Electrochemical Soc. Proc. Vol. 94-35, pp. 135-144.

54. K. C. Lin and S. C. Lee, 1995, "A Novel Angle Position Detector for Application to Pattern Recognition", 53rd Annual Device Research Conference, Charlottesville, Virginia, U.S.A. Digest, pp. 68-69.

55. K. C. Lin and S. C. Lee, 1995, "Angle Position Detection Using a Novel Double Hollow Four Quandrant Orientation Detector for Application to Pattern Recognition", 1995 International Conf. on Solid State Device and Materials (SSDM'95), Osaka, Japan. Extended Abstract, pp. 638-640.

56. R. M. Lin and S. C. Lee, 1995, "Novel "insitu" Method to Determine the InAs Epilayer Quality and InAs Infrared Light Emitting Diode (LED) by MBE", 20th Annual Conf. on

21

Infrared and Millimeter Waves, Orlando, Flourida, U.S.A.

57. S. C. Lee and C. R. Shih, 1996, " Investigation of Character Recognition on Folded Papers Using Fingertips", The 4th International Symp.-Biomedical Eng. in the 21st Century, Taipei, Taiwan, p. 194.

58. W. S. Liao and S. C. Lee, 1996, " Protection of Low Temperature PECVD a-SiNx:H Films by Coating a Thin Layer of a-Si : H ", Eighth International Conf. on Solid Films and Surfaces ( ICSFS-8 ), Osaka, Japan.

59. J. H. Wei and S. C. Lee, 1996, " The Delay Time and Structure Change of Liquid Phase

Deposited Silicon Oxide ", The Electrochemical Society 190th Meeting, San Antonio, Texas, p. 555, 1996.

60. Shian-Feng Tang, Ray-Ming Lin, S. C. Lee, C. H. Kuan, Gin-Shiang Chen, Tai-Ping Sun and

Jyh-Chiarng Wu, 1996, "Improvement of Current Leakage on InAs Diode Detector by Adding an Undoped Layer", 1996 International EDMS, Hsinchu, Taiwan.

61. Ray-Ming Lin and S. C. Lee, 1996, "Novel Method to Determine the InAs growth mode by Molecular Beam Epitaxy", 1996 International EDMS, Hsinchu, Taiwan.

62. Biing-Der Liu, Ray-Ming Lin S. C. Lee and Tai-Ping Sun, 1996, "Highly Mismatch InAs/GaAs Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy", 1996 International EDMS, Hsinchu, Taiwan.

63. J. H. Wei and S. C. Lee, 1996, "The Mechanism of Initial Silicon Oxide Growth by Liquid Phase Deposition", 1996 International EDMS, Hsinchu, Taiwan.

64. R. M. Lin, S. C. Lee and H. H. Lin, 1997, "Photoluminescence of InAs Quantum Dot Superlattice grown on GaAs by MBE", Materials Research Society, 1997 Spring meeting, San Francisco, California.

65. J. H. Wei, M. S. Sun and S. C. Lee, 1997, " The Improved Light-Induced Degradation and the Possible Mechanism in Deuterated Amorphous Silicon Alloy", 1997 International Conf. on Solid State Devices and Materials (ssdm), Hamamatsu, Japan.

66. S. C. Lee, 1997, " The Mechanism of Chatacter Recognition by Fingers (Third Eye) with Associated Physiological Measurements", The Fourth Scientific Meeting of Somatic Science in China, Beijing, China.

22

67. S. C. Lee, 1998, "The Improved Performance and Stability of Deuterated Amorphous Silicon Thin Film Transistor", Workshop on "Role of Hydrogen and Deuterium in Hot Electron Semiconductor Device Degradation", Urbana-Champaign, Illinois. (Invited Talk)

68. Jiun-lin Yeh and S. C. Lee, 1998, " High Field-effect-mobility a-Si:D TFT based on the Substitution of Hydrogen with Deuterium", 1998 International EDMS, Tainan Taiwan.

69. Chun-Ting Liu and S. C. Lee, 1998, " Photo-CVD SiO2 Passivated InAs P-I-N Infrard Photodiodes”, 1998 International EDMS, Tainan Taiwan.

70. R. M. Lin and S. C. Lee, 1999, “Up to 5ML Self-Organized InAs Quantum Dots Grown on GaAs”, Canadian Semiconductor Technology Conference, Ottawa, Canada, August 10~13.

71. S. F. Tang, S. Y. Lin, Y. C. Liao, S. C. Lee and Y. T. Cherng, 2000, “Observation of Self-Assembled InAs/GaAs Quantum Dot Structure with Temperature-Dependent Photoluminescence Measurement and Electrical Characteristics”, International Optoelectronics Symposium Photonics Taiwan, Taipei, Taiwan.

72. Y. C. Liao, S. Y. Lin, S. C. Lee, and C. Chia, 2000, "Spherical SiGe Quantum Dots prepared by Thermal Evaporation Method", 2000 International Conf. Solid State Devices and Material, (SSDM 2000), Sendai, Japan, pp. 336~337.

73. A. Shih, S. C. Lee, T. R. Yang and C. C. Lu, 2000, “Structural Differences between Deuterated and Hydrogenated Silicon Nitride/Oxynitride”, 198th Meeting of the Electrochemical Society, Phoenix, U.S.A. .

74. S. F. Tang, S. Y. Lin, S. C. Lee, J. S. Kuang and Y. T. Cherng, 2000, “High Temperature Operated (~250 K) Photovoltaic-photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector”, International Electron Device Meeting (iedm), San Francisco, U.S.A. .

75. S. Y. Lin, Y. R. Tsai, S. F. Tang and S. C. Lee, 2000, “High Performance InAs/GaAs Quantum Dot Infrared Photodetector (QDIP) Operated over 60 K”, 2000 International Electronic Devices and Materials Symposium (IEDM), Tainan, Taiwan.

76. S. D. Chen, A. Shih, and S. C. Lee, 2000, “The Fabrication and Instability Analysis of Schottky-Contact Gated Four Probe a-Si:H(D) Thin Film Transistros, 2000 IEDM, Tainan, Taiwan.

77. C. Y. Meng, A. Shih, S. C. Lee, and C. T. Chia, 2000, “Nickel Enhanced Polysilicon Formation 23

by Excimer Laser Annealing”, 2000 IEDMS, Tainan, Taiwan.

78. S. Y. Lin, Y. R. Tasi, S. C. Lee, 2000, “Negative Differential Conductance of InAs/GaAs Quantum Dot Infrared Photodetector”, International Photonics Conf. (ICP 2000), Hsinchu, Taiwan.

79. S. C. Lee, 2001, “High Temperature Operated Photovoltaic-photoconductive (PV-PC) Mixed-mode InAs/GaAs Quantum Dot Infrared Photodetector”, Japan-Taiwan Joint Seminar on Photonics, Chiba, Japan, February.

80. S. Y. Lin, Y. J. Tsai and S. C. Lee, 2001, “100K Operated Photovoltaic InAs/GaAs Quantum-Dot Infrared Photodetector with Uniform Dot Density”, 2001 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan.

81. S. F. Tang, S. Y. Lin, and S. C. Lee, 2001, “Temperature-Stable (Wavelength~ 1μm) InAs/GaAs Quantum Dot Light-Emitting Diode”, IEEE-NANO 2001 (First IEEE Conference on Nanotechndogy), Maui, Hawaii, U.S.A, Octbor.

82. S. C. Lee, D. Tang, C. D. Chen and S. T. Fang, 2001, “Finger Reading: Phenomena and Implication”, Conference on Spiritual Healing Ⅲ: Bridging Worlds and Filling Gaps, Kona, Hawaii, U.S.A, November.

83. Shen-De Chen, Chiou-Yun Tsai, and Si-Chen Lee, 2002, “ Phase Separation Growth of InGaAs Cap Layer on InAs/GaAs Quantum Dots”, IEEE-NANO 2002, Washington D.C., August.

84. W. C. Hsueh and S. C. Lee, 2002, “The Fabrication of Polysilicon Thin Film Transistors by Copper Induced Crystallizatioin”, Proc. of 2002 IEDMS, Taipei, Taiwan, pp. 155-157.

85. T. C. Lin, S. C. Lee, H. H. Cheng and S. W. Lee, 2002, “High Temperature Operation (~ 240 K) of Silicon-Germanium Spherical Quantum Dot Infrared Photodetectors (QDIP) Prepared by Combination of Bottom-up and Top-down Technologies”, Proc. of 2002 IEDMS, Taipei, Taiwan, pp. 247-252.

86. C. C. Chen and S. C. Lee, 2003, “An Order of Magnitude Increase of Lateral Growth Rate of Poly-Si Induced by Cu/Ni Instead of Ni Alone”, 2003 VLSI-TSA Symposium, Hsinchu, Taiwan.

87. Chang-Wei Wu, Kai-Hsiang Chuang, Si-Chen Lee, Ching-Po Lin, Jyh-Horng Chen, 2003, “Finger Reading by Using Functional Magnetic Resonance Imaging”, Ninth Annual Meeting of the Organization for Human Brain Mapping 2003, New York, USA, June.

24

88. Yung-Jong Shiah, Si-Chen Lee & Robert Morris, 2003, “Evaluation Cutaneous Acuity Training Techniques”, 27th International Society for Psychical Conference, Manchester, UK.

89. Tse-Chi Lin, S. C. Lee, Hung-Hsiang Cheng and Sheng-Wei Lee, 2003, “High Temperature Operation (~ 240 K) of Silicon-Germanium Spherical Quantum Dot Infrared Photodetector (QDIP) by Combination of Bottom-up and Top-down Technologies”, International Workshop on Processing and Characterization of Nanomaterials, Warsaw, Poland.

90. Si-Chen Lee, 2003, “High Temperature Operation (~ 240 K) of InAs/GaAs and Silicon-Germanium Spherical Quantum Dot Infrared Photodetector (QDIP)”, 3rd Emerging Information Technologies Conference, Princeton, New Jersey, USA, October. (Invited Planar Talk)

91. Chien-Hui Liou, Chao-Hsien Hsieh, Si-Chen Lee, Shis-Chin Fang, Chang-Wei Hsieh, Jyh-Horng Chen, 2004, “Studies of Forced and Non-forced Chinese Meditation by Using Functional Magnetic Resonance Imaging”, Tenth Annual Meeting of the Organization for Human Brain Mapping 2004, Budapes, Hungary.

92. Shih-Yen Lin, Jim-Yong Chi and Si-Chen Lee, 2004, “High Responsivity Quantum-Dot Infrared Photodetector with Two Al0.1Ga0.9As Blocking Layers at Both Sides of The Structure”, International Conference on Molecular Beam Epitaxy (MBE2004), Edinburgh, Great Britain.

93. Sheng-De Chen, Ying-Ying Chen and Si-Chen Lee, 2004, “High-performance Multi-color InAs/AlGaAs Quantum Dot Infrared Photodetector”, 2004 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan.

94. Si-Chen Lee, 2004, “Introduction to the Nano-Science and Technology Research in National Taiwan University”, 4th Emerging Information Technologies Conference, Princeton, New Jersey, USA, October. (Invited Planar Talk)

[B] Conference Paper (Local)

1. S. C. Lee and S. S. Chao, 1983, "Percolation Process in High Conductivity Phosphorus- Doped Amorphous Si:H:F Alloys", Annual Meeting of the Chinese Material Science Association, Kaohsiung, Taiwan. p. 28.

2. S. C. Lee, 1983, "Characterization of PIN a-Si:H:F Solar Cells", 2nd ROC Solar Cell Workshop, Hsinchu, Taiwan.

3. S. C. Lee, 1983, "Hydrogen Diffusion in Hydrogen-Implanted Amorphous Si", 9th ROC Electron Devices and Materials Symposium (EDMS), Taipei, Taiwan, p. 70.

25

4. S. C. Lee and H. H. Lin, 1983, "AlGaAs-GaAs Dual-Wavelength Photodetectors for WDM Technologies", 9th EDMS, Taipei, Taiwan, p. 319.

5. H. H. Lin, J. S. Lin, H. K. Chiou and S. C. Lee, 1984, "Determination of AlGaAs G15-G1

Bandgap Energy by Schottky Barrier Spectral Response Measurement", Annual Meeting of the Chinese Material Science Association, Tainan, Taiwan. p. 225.

6. M. H. Shieh, J. A. Chen, H. H. Lin, S. C. Lee and Y. L. Chiou, 1984, "AlGaAs/GaAs Stripe Geometry Double-Heterostructure Lasers", Annual Meeting of the Chinese Material Science Association, Tainan, Taiwan, p. 248.

7. H. K. Chiou, C. Z. Chen and S. C. Lee, 1985, "AlGaAs Buried Heterostructure Lasers", Proc. 1985 Annual Conf. of Chinese Society for Material Science, Taipei, Taiwan, p. 224.

8. J. A. Chen, S. C. Lee and T. I. Ho, 1985, "A New Etching Solution, K2S2O8, for GaAs", Proc. 1985 Annual Conf. of Chinese Society for Materials Science, Taipei, Taiwan, p. 247.

9. H. K. Tsai, W. J. Tzeng, S. C. Lee and C. S. Hong, 1985, "Stability of a-Si:H", Proc. 1985 Annual Conf. of Chinese Society for Materials Science, Taipei, Taiwan, p. 250.

10. J. A. Chen, S. C. Lee and T. I. Ho, 1985, "On the Etching Mechanism of Potassium Peroxodisulfate for the Semiconductor GaAs", 2nd International Electrochemical Symposium, Tainan, Taiwan.

11. S. C. Lee and H. H. Lin, 1985, "Theory on the AlGaAs Double Heterojunction Transistor", 11th EDMS, Hsinchu, Taiwan, p. 61.

12. H. H. Lin and S. C. Lee, 1985, "AlGaAs/GaAs Single Heterojunction Bipolar Transistors with a Common Emitter Current Gain of 12500", 11th EDMS, Hsinchu, Taiwan, p.65.

13. T. P. Sun and S. C. Lee, 1985, "p-(Al,Ga)As/GaAs Modulation-doped Heterostructure", 11th EDMS, Hsinchu, Taiwan, p.69.

14. H. K. Chiou and S. C. Lee, 1985, "AlGaAs/GaAs Buried Heterostructure Lasers", 11th EDMS, Hsinchu, Taiwan, p. 73.

15. H. K. Tsai, W. J. Tzeng and S. C. Lee, 1985, "High Quality a-Si:H Prepared by low frequency Glow-Discharge", 11th EDMS, Hsinchu, Taiwan, p. 217.

26

16. S. C. Lee, 1986, "Long-time Repeated Lifetest of a-Si:H", Syposium on Amorphous Silicon Physics and Devices", Hsinchu, Taiwan, August.

17. J. K. Chen and S. C. Lee, 1986, "AlGaAs/GaAs Visible Ridge Waveguide Laser by

Multicavity Structure", 12th EDMS, Tainan, Taiwan.

18. L. C. Suen and S. C. Lee, 1986, "AlGaAs/GaAs Ridge Waveguide Laser Array", 12th EDMS, Tainan, Taiwan, p. 129.

19. H. C. Lee, S. C. Lee, H. H. Lin and F. C. Hwang, 1986, "Evalution of DX-center in Sn-doped AlxGa1-xAs", 12th EDMS, Tainan, Taiwan, p. 314.

20. C. Z. Chen and S. C. Lee, 1986, "The Reduction of the Surface Recombination Current by Sandwiching a p-type AlGaAs in the Emitter-Base Interface of AlGaAs Double Heterojunction Bipolar Transistors", 12th EDMS, Tainan, Taiwan, p. 328.

21. H. K. Tsai, W. J. Tzeng and S. C. Lee, 1986, "Origin of Boron Contamination of Intrinsic a-Si:H in Glow Discharge", Digest of Silicon Material Research Symposium, Hsinchu, Taiwan, p. 25.

22. W. J. Tzeng, H. K. Tsai and S. C. Lee, 1986, "Annealing Kinetics of Photodegraded a-Si:H", Digest of Silicon Material Research Symposium, Hsinchu, Taiwan, p. 26.

23. S. C. Lee and H. K. Tsai, 1987, "The Amorphous SiC/Si Color Detector", Joint Chinese-American Sensor Workshop, Hsinchu, Taiwan.

24. Y. W. Shen and S. C. Lee, 1987, "Nonuniform Reflective Diffraction Coupled Laser Array", 13th EDMS, Taipei, Taiwan, p. 12.

25. C. Z. Chen, S. C. Lee and H. H. Lin, 1987, "The Hot Electron Effect in Double Heterojunction Bipolar Transistors: Theory and Experiment", 13th EDMS, Taipei, Taiwan, p. 24.

26. C. W. Liu, S. L. Cheng, J. P. Lay, S. C. Lee and H. H. Lin, 1987, "The Characteristics of Silane Doping of GaAs by MOCVD", 13th EDMS, Taipei, Taiwan, p. 77.

27. W. L. Lin, H. K. Tsai, W. J. Sah and S. C. Lee, 1987, "The Characteristics of a-SiC:H", 13th EDMS, Taipei, Taiwan, p. 200.

28. W. J. Tzeng and S. C. Lee, 1987, "Photodegradation Kinetics of a-Si:H", 13th EDMS, Taipei, Taiwan, p. 211.

27

29. H. K. Tsai and S. C. Lee, 1987, "The Amorphous SiC/Si Three Color Detector", 13th EDMS, Taipei, Taiwan, p. 219.

30. G. S. Lee, J. G. Hwu, S. C. Lee and W. S. Wang, 1987, "Charge Temperature Effects on Co-60 Irradiated MOS Capacitor", 13th EDMS, Taipei, Taiwan, p. 177.

31. S. C. Lee, 1989, "The Generation of Chi by Stimulation Methods", Symposium on Recent Development of Acupuncture Research & Clinical Application, Taichung, Taiwan.

32. Chung Cheng Wu, Jing Lung Ting and S. C. Lee, 1989, "The Origin of the Surface 2kT Recombination Current of Heterojunction Bipolar Transistor", 15th EDMS, Taipei, Taiwan, p. 208.

33. Jing Lung Ting, Hao Hsiung Lin and S. C. Lee, 1989, "Fabrication and Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistors (HJBT's) Using a New Emitter-edge-thinning", 15th EDMS, Taipei, Taiwan, p. 213.

34. Ta Chung Wu and S. C. Lee, 1989, "High Power, Nearly Diffraction-limited Beam Output of a Double Y-junction Diode Laser Array", 15th EDMS, Taipei, Taiwan, p. 224.

35. S. C. Lee, 1989, "Physical and Electronic Structure of Amorphous Silicon (Carbon) Hydrogen Alloy", 15th, EDMS, Taipei, Taiwan, p. 227.

36. Jyh Ling Lin, Wen Jyh Sah and S. C. Lee, 1989, "Theoretical Analysis of Channel-Doped Amorphous Silicon Field-Effect Transistors", 15th EDMS, Taipei, Taiwan, p. 300.

37. Wen Jyh Sah, Jyh Ling Lin and S. C. Lee, 1989, "High Performance a-Si:H Thin Film Transistor Using Lightly Doped Channel, 15th EDMS, Taipei, Taiwan, p. 305.

38. S. C. Lee, 1989, "Model for Vision Illusion and Its Application to Pattern Representation", 1989 Telecommunication Symposium, Taipei, Taiwan, pp. 207-213.

39. S. C. Lee, 1990, "Physical and Electronic Structure of Amorphous Silicon Carbon Hydrogen Alloy", Symposium on Frontiers in Condensed Matter Sciences, Taipei, Taiwan.

40. J. S. Jou, W. J. Sah, and S. C. Lee, 1991, "Microcrystalline Silicon Deposited by Glow Discharge Decomposition of Heavily-diluted Silane", 17th EDMS, Taipei, Taiwan, pp. 468-471.

28

41. K. C. Lin and S. C. Lee, 1991, "The Structural Properties of a-SINx:H Prepared by Plasma Enhanced Chemical Vapor Deposition", 17th EDMS, Taipei, Taiwan, pp. 472-475.

42. C. H. Chen and S. C. Lee, 1991, "A Monolithic Integration of an AlGaAs/GaAs Surface Emitting Laser Diode and a Photodetector", 17th EDMS, Taipei, Taiwan, pp. 420-423.

43. T. H. Shieh, P. D. Liu, M. Y. Wu, T. C. Chang, S. C. Lee, and H. H. Lin, 1991, "Infrared Detector Using Heavily be Doped GaAs", 17th EDMS, Taipei, Taiwan, pp. 562-565.

44. H. C. Lin, W. J. Sah, and S. C. Lee, 1991, "The Common Gate CMOS With Amorphous Thin Film Transistor on Top of Crystalline PMOS" ,17th EDMS, Taipei, Taiwan, pp. 492-495.

45. C. C. Wu, S. C. Lee, and H. H. Lin, 1991, "AlGaAs/GaAs Heterojunction Bipolar Transistors with High current Gain Grown by Molecular Beam Epitaxy", 17th EDMS, Taipei, Taiwan, pp. 343-346.

46. W. J. Sah and S. C. Lee, 1993, "The a-Si:H Orientation Detector Array", Workshop on Neural Network, Taipei, Taiwan.

47. T. H. Shieh and S. C. Lee, 1993, "DX Center Related Tunneling Peak in the AlxGa1-

xAs/AlAs/AlxGa1-xAs/AlAs/AlxGa1-xAs (0.4≦x≦0.5) Resonant Tunneling Diodes", 1993 EDMS, Chung-Li, Taiwan, pp. 36-39.

48. K. C. Lin and S. C. Lee, 1993, "The Hydrogenated Amorphous Silicon Active Hollow Four Quadrant Orientation Detector for Application to Neural Network Image Sensors", 1993 EDMS, Chung-Li, Taiwan, pp. 52-55.

49. B. D. Liu, S. C. Lee, K. C. Liu, T. P. Sun and S. J. Yang, 1993, "High Breakdown Voltage InSb p-channel MOSFET Prepared by photo-Enhanced Chemical Vapor Depositio", 1993 EDMS, Chung-Li, Taiwan, pp.159-162.

50. S. Z. Chang and S. C. Lee, 1993, "Magneto-Optical Studies of Highly Mismatched InxGa1-xAs on GaAs by Molecular Beam Epitaxy", 1993 EDMS, Chung-Li, Taiwan, pp. 418-421.

51. 李嗣涔, 1994, "氣功的科學觀", 第一屆生物能場研討會（氣功、經絡及傅爾電針之應用）,台北, 台灣。

52. B. D. Liu, S. C. Lee, T. P. Sun and G. S. Chen 1995, "Observation of Avalanche Multiplication in Low BandGap InSb Infrared Photodiode", 1995 EDMS, Kaohsiung, Taiwan, pp. 109-114.

29

53. K.C. Lin and S. C. Lee, 1995, " A Novel Angle Position Detector For Application to Patten Recognition, 1995 EDMS, Kaohsiung, Taiwan, pp. 167-171.

54. J. L. Yeh and S. C. Lee, 1995," Structural and Optical Properties of Amorphous Silicon Oxynitride ", 1995 EDMS, Kaohsiung, Taiwan, pp. 178-183.

55. S. C. Lee, 1995, "Electromagnetic Phenomenon During Psychokinesis", 1995 General Ass. of international Sci. Radio Union, Kaohsiung, Taiwan, August 1995.

56. 李嗣涔，1995，“人體潛能研究—心電感應，手指識字及念力”，第二屆生物能場研討

會(氣功、經絡及傅爾電針之應用)，台北，台灣。57. 李嗣涔, 1996，"特異功能（神通）與科學", 第四屆佛學與科學研討會論文集，台北，台

灣，pp. 45-57.

58. 李嗣涔，1996，“手指識字之研究”，第三屆生物能場研討會(經絡、外氣、氣功、養生法及人體潛能) ，台北，台灣。

59. R. M. Lin, S. C. Lee, H. H. Lin, Y. T. Dai, and Y. F. Chen, 1997, "Temperature Dependent Photoluminescencee Spectra in Self-Organized InAs Quantum Dots Grown on GaAs", The Sixth National Conf. on Science and Technology of National Defense, Ta-Hsi, Tao-Yuan, Taiwan, Nov. 1997.

60. R. M. Lin, S. C. Lee, H. H Lin, L.Zen Hsieh, and X. J Guo, 1997, "A Study of Self-Organized InAs Quantum Dots On GaAs", 1997 EDMS, Chung-Li, Taiwan, pp. 253-256.

61. M. S Sun, J. H. Wei, A. Shih and S. C. Lee, 1997, "Improved Light-Induced Degradation In Deuterated Amorphous Silicon Alloy", 1997 EDMS, Chung-Li, Taiwan, pp. 334-337.

62. Y. P. Chou, J. H. Wei and S. C. Lee, 1997, "The Study of Structural Change of Hydrogenated Amorphous Silicon Germanium Alloy (a-SiGe:H) By IR Spectroscopy", 1997 EDMS, Chung-Li, Taiwan, pp. 345-348.

63. J. H. Wei and S. C. Lee, 1997, "The Retardation of Aluminum-Amorphous Silicon Interaction by Phosphine Plasma Treatment", 1997 EDMS, Chung-Li, Taiwan, pp. 349-352.

64. C. H. Chiang, C. T. Liu and S. C. Lee, 1997, "Double Heterostructure Light Emitting Diode Using Multiquantum Barrier Structure", 1997 EDMS, Chung-Li, Taiwan, pp. 486-489.

65. Y. P. Chou, J. H. Wei and S.C. Lee, 1997, "Evidence for the Void Size Related IR Absorption 30

Frequency Shifts in Amorphous Silicon (Germanium) Films", 1997 EDMS, Chung-Li, Taiwan, pp. 516-519.

66. 李嗣涔，1997，“氣功與人體特異功能的科學觀”，《宗教、靈異、科學與社會》研討會台北，台灣，第233至264頁。

67. 李嗣涔，1998，“手指識字之生理機制—第三眼”，第四屆生物能場研討會(氣與身心) ，台北，台灣。

68. 李嗣涔，1998 ，“心物合一︰由手指識字到念力彎物”，第五屆佛學與科學研討會論文集，台北，台灣。

69. J. L. Yeh, H. L. Chen, Y. F. Hsiou and S.C. Lee, 1999, “The Improvement of Characteristics of Poly-Silicon Thin Film Transistor by Substitution of Hydrogen Passivation with Deuterium”, The Sixth Symp. on Nano Device Technology, Hsinchu, Taiwan.

70. 李嗣涔， 1999，“心物合一與宏觀量子現象”，第五屆生物能場研討會，台北，台灣。71. S. F. Tang, S. Y. Lin, Y. C. Liao and S. C. Lee, 1999, "Infrared Absorption Spectra of Self-

organized InAs/GaAs Quantum Dot Device", 1999 Taiwan Electro-optical Technology Meeting, Chun-Li, Taiwan.

72. S. C. Lee, 1999, “High Field-effect-mobility Deuterated Amorphous Silicon Thin Film Transistors Based on the Substitution of Hydrogen with Deuterium”, 1999 EDMS, Linko, Taiwan, pp. 423. (Invited Talk).

73. 李嗣涔，1999，“人體特異功能－走向深層的真實世界”，1999年中華生命電磁科學學會大會邀請演講，台北，台灣。

74. S. F. Tang, S. Y. Lin, K. H. Huang, C. M. Yang, Y. C. Cheng, and S. C. Lee, 2000, "Study for Temperature Dependent Photoluminescence of Stacked InAs/GaAs Quantum Dot Superlattice structure", Symposium on Nano Device Technology 2000, Hsin-Chu, Taiwan.

75. 廖友誠 , 林時彥 , 李嗣涔， 2000, “Spherical SiGe Quantum Dots prepared by Thermal Evaporation Method”, 第二屆奈米材料展望研討會，台北，台灣。

76. 李嗣涔，2000，“手指識字辨識關鍵字所產生的異象”，2000年中華生命電磁科學學會大會邀請演講，台北，台灣。

77. 李嗣涔，2001，“手指識字關鍵字與信息場的聯繫模式”，2001年中華生命電磁科學學31

會大會邀請演講，台北，台灣。78. Shen-De Chen, Chiou-Yun Tsai, and S. C. Lee, 2001, “Phase Separation growth of InGaAs

caplayer on InAs/GaAs quantum dot”, 2001 Electronics Devices and Materials Symposium (EDMS), Kaoshung, Taiwan.

79. Chao-Yu Meng, Yaw-Shing Tseng, S. C. Lee, 2001, “Nickel Induced Lateral Crystallization of Poly-Si Thin Film Transistros”, 2001 Electronics Devices and materials Symposium (EDMS), Kaoshung, Taiwan.

80. 李嗣涔，2002，“與信息場對話”，2002年中華生命電磁科學學會大會邀請演講，台北，台灣。

81. Shen-De Chen, Ming-Wei Tsai, S. C. Lee, 2002, “Study of Photo-voltaic Effect in Quantum Dot Infrared Photodetector”, 2002 Optics and Photonics, Taiwan.

82. 李嗣涔，2003，“遨遊有形(宇宙)與無形界(信息場)”，2003年中華生命電磁科學學會大會邀請演講，台北，台灣。

83. Si-Chen Lee, 2003, “Low Temperature Poly-Si Thin Film Transistor for Liquid Crystal Display”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan. (Invited Planar Talk)

84. Ming-Wei Tsai, Ying-Ying Chen and Si-Chen Lee, 2003, “The Role of Stress on the Electronic Properties of InAs/GaAs Quantum Dots”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 495-497.

85. Ming-Wei Tsai, Shen-De Chen and Si-Chen Lee, 2003, “Transport Characteristics of InAs/GaAs Quantum-Dot Infrared Photodetector”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 498-500.

86. Chao-Yu Meng and Si-Chen Lee, 2003, “A New Body-contact Structure to Improve the Reliability of Low Temperature Poly-Si Thin Film Transistor (TFT)”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 839-842.

87. Chi-Chieh Chen, Chin-Chi Chen and Si-Chen Lee, 2003, “The Fabrication of Poly-Si Thin Film Transistors Using Nickel/Copper Double Layer Induced Lateral Crystallization”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 843-847.

88. Sheng-Da Liu Kuo-Hsien Lee and Si-Chen Lee, 2004, ”Large Grain Poly-Si (~10 μm) 32

Prepared by Excimer Laser Annealing through a Thick SiON Absorption Layer”, 2003 Electron Devices and Materials Symposium (EDMS), Keelung, Taiwan, pp. 848-851.

[C] Books李嗣涔，管傑雄，孫台平合著，“半導體元件物理”，三民書局，台北，1995。 (獲第20屆金鼎獎）[D] 目前仍有效的專利

類別專利名稱國別專利號碼發明人專利權人專利期間國科會計

畫編號A非晶矽碳氫邊界偵測器及指向偵測器中華民國發明第

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行政院國家科學委員會

1991 年 9 月 21 日至2006 年 9 月 20止

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1994 年 9 月 27 日至2011 年 9 月 27 日止

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002-019

A 雙四象限轉角位置偵測元件中華民國發明第078380 號

林綱正李嗣涔


1996 年 5 月 21 日至2015 年 12 月 17 日止

NSC83-

0404-E-

A製備二氧化矽的過飽和溶液的方法及利用此溶液沈積二氧化矽的方法

中華民國發明第080534 號

李嗣涔周政旭


1996 年 8 月 21 日至2014 年 4 月 1 日止

NSC82-

0404-E-

002-293

ADouble Four-Quadrant Angle

Position DetectorU.S.A 5,717,201 李嗣涔行政院國家

科學委員會1998 年 2 月 10 日至2016 年 4 月 18 日止

NSC83-

0404-E-

A 非晶體顏色偵測器日本特許第2836824 號

李嗣涔蔡熊光


1998 年 10 月 9 日至2008 年 8 月 4 日止

A

Low Temperature-Deposited

Passivation Film over

Semiconductor Device

U.S.A 5,903,047 李嗣涔廖文翔


1999 年 5 月 11 日至2017 年 2 月 19 日止

NSC85-

2215-E-

002-026

A

低溫下 (<150 ﾟ C)沈積之氫化非晶氫化矽及非矽氫複合保護膜、其沈積方法及具有此保護膜之半導體裝置

中華民國發明第094767 號

李嗣涔廖文翔


1998 年 5 月 21 日至2017 年 1 月 2 日止

NSC85-

2215-E-

002-026

33

A 製作自行聚合矽量子點之方法中華民國發明第137819 號

李嗣涔孟昭宇石安


2001 年 7 月 21 日至2020 年 5 月 17 日止

NSC89-

2215-E-

002-006

A Fabrication Method of Self-

Assembly Silicon Quantum DotU.S.A

發明第US6,375,73

7 B2 號

孟昭宇石安李嗣涔


2002 年 4 月 23 日至2021 年 4 月 4 日止

NSC89-

2215-E-

002-006

A製作量子點紅外線偵測器之方法中華民國發明第

152557 號李嗣涔林時彥湯相峰管傑雄


2002 年 3 月 21 日至2021 年 1 月 14 日止

NSC89-

2215-E-

002-018

A利用氣態凝結並結合磊晶技術製作球形量子點元件的方法中華民國發明第

198262 號李嗣涔林澤琦


2004 年 3 月 1 日至2023 年 1 月 1 日止

NSC91-

2215-E-

002-006

A

Method of Fabricating Spherical

Quantum Dots Device By

Combination of Gas

Condensation and Epitaxial

Technique

U.S.A

US

6,774,014

B1

李嗣涔林澤琦


2003 年 3 月 28 日至2023 年 3 月 28 日止

NSC91-

2215-E-

002-006

A

Method of Fabricating

Polysilicon Film by

Nickle/Copper Induced Lateral

Crystallization

U.S.A

US

6,787,0434

B1

李嗣涔薛瑋傑陳志杰


2004 年 9 月 7 日至2023 年 5 月 2 日止

NSC91-

2215-E-

002-006

34

三、榮譽事蹟

內容時間教育部第 47 屆學術獎(工程及應用科學) 民國 92 年國際電機電子工程學會會士 (IEEE Fellow)(IEEE 全世界 30多萬會員中約百分之ㄧ到二的會員曾經獲得)

91 年中華民國電機工程學會獎章(中華民國電機工程學會每年頒給一位，對國內電機工程領域有重大貢獻的會員)

91 年

IEEE Third Millennium Medal for outstanding achievements and contributions on electronic devices

(IEEE 在公元 2000 年進入第三千年之際，頒給電機電子各領域有重大貢獻的會員)

89 年

亞太材料學院院士 86 年兩屆國科會特約研究人員 85 年至 91 年著作“半導體元件物理”一書獲得第 20 屆金鼎獎 84 年

35

連續五屆十年國科會傑出研究獎 75 年至 85 年中國工程師學會優秀青年工程師 76 年中山學術獎（工科） 76 年臺灣大學教學優良獎 93 年

註：1.本表若不敷使用請以 A4 紙張自行影印。2.本表請打字填送並用 A4 紙張直式橫書，以 WORD 文書系統處理；字體請採「標楷

體 12 點」。全四頁第三頁

四、治校理念與抱負（請以中文撰寫，以二千字為限）

36

我心目中的台灣大學一個真正理想的台灣大學，必須是教育卓越的大學、研究卓越的大學、也必須是國家社會最具代表性的大學。

一、教育卓越的大學　台灣大學網羅了我們國家 18 到 24歲年輕人中的精英，這些學生當中有相當一部份

會成為各行各業的領袖、會成為各大學的知名教授，教導下一代的年輕人，他們的素質將決定我們國家的未來。我們台灣大學到底要怎麼來教育這些國家未來的精英？我認為首先必須維持台大校園文化中「自主」與「自由」的特色，以培養他們的情操；第二要強調大學追求真理的精神，以建立他們普世的價值；第三就是要加強推展全人教育，以培養他們成為現代的公民。

大學的存在是恆久而跨越時代、跨越政治的，西方有名的大學很多是有超過五百年的歷史，經歷了不同的朝代，而大學仍然存續下來，扮演著追求真理，培育全人發展的知識份子之角色。即使是台灣大學本身七十六年的歷史中，也經歷了台北帝國大學及台灣大學兩個階段。因此大學應該建立一些校園文化的特色，作為大學恆久的價值，成為大學砌立不搖的象徵。我認為台大校園文化的恆久價值就是「自主」與「自由」，要堅持學術的自主，不受政治的干擾。對國家的公共政策與社會現象表達適度的關切，但是也要與政治保持距離。在自由方面，充分尊重老師及學生的教學、研究的自由，以及思想表達的自由。我如果能作為台大的校長，將堅定的維護台大校園文化中的特色「自主」與「自由」。

　一個大學的靈魂在於人文社會與自然科學的高度發展，它代表了一個大學對於追求真理的堅持，包括人類前途、社會發展、以及宇宙真相的探索，這也就是傅斯年校長所說：

「貢獻這所大學于宇宙的精神」。因此世界上任何一所著名的大學，都是在人文社會以及自然科學上有高度的成就。然而近年來由於高科技工業及金融服務業的快速發展，凡是與此有關的系所在資源的取得及學生的選擇上均取得了很大的優勢。人文社會與自然科學卻處於相對弱勢，經費不足，對亟欲成為國際一流大學的台大相當不利。我如果能作為台大的校長，將藉由良好的研究型大學計畫，爭取更多的資源來改善本校人文社會與自然科學的發展。

在全人教育方面，學生除了要有突出的專業知識以外，他們的人文的涵養尤為重要。他們應該熟讀文化、哲學、歷史的經典，應該培養對生命的尊重，對人的同理心，以恢弘他們的見識，提升他們的氣質。目前具有全人教育理念的有共同與通識課程，我如果能作為台大的校長，將在共同課程上增加經典的選讀；在通識課程上增加主動規劃的人文、歷史、哲學、心理與生命科學的組群課程。由經過教學評鑑為優良的老師來授課，採大班教學，由校方提供經費配以大量的助教來減輕教學的負擔，以提升教學優良老師們教通識課程的意願，開出具有品質的通識課程。

37

註：1.本表若不敷使用請以 A4 紙張自行影印2.本表請打字填送並用 A4 紙張直式橫書，以 WORD 文書系統處理；字體請採「標楷

體 12 點」。五、相關承諾

本人若獲聘為國立臺灣大學校長，承諾於擔任校長職務期間，具中華民國國籍，並不得具有雙重國籍，且不兼任任何黨政職務。

承諾人：　　　　　　　（簽章）

全四頁第四頁　

38

二、研究卓越的大學　本校作為研究卓越的大學，是希望五年內進入如上海交大所做世界著名大學排名前壹百名，長期

願景是成為國際一流大學。國際一流大學的簡單定義，就是一旦提到某個領域就會想到某個大學所做的研究，一個學校只要有幾個領域具有這樣的名聲，就有資格成為國際一流大學。因此要成為國際一流大學，並不是要每個學術領域都要達到國際一流，事實上這也是不可能的。我如果能作為台大的校長，要找出本校最可能成為國際一流的系所，予以重點支持。並要以研究型大學額外的經費及校內空間來支持新的、具有整合性的研究，建立整合的研究中心，並與產業界充分合作，尋求產業界資源的挹助。一流的研究需要一流的人才，如何建立薪資分級制度，以獎勵教學研究表現優良的老師；如何建立特聘制度，配合良好的居住環境，以網羅世界一流人才，是學校重要的發展方向。身為校長還有一件可以做的事，是身先士卒帶領學校老師到政府機構及業界找資源，匯集充足的資源，容易提昇研究的水準。同時也要加強國際的合作，擴大師生的國際觀，並參與國際知名的研究團隊，以提昇研究水準。我也準備創立「教師人力銀行」制度，以預支週轉的教師人力來帶動系所的轉型，提升系所的教學研究水準。三、國家社會最具代表性的大學　　台大是國內最完整的綜合大學，也是國內最具代表性的大學，但是台大與社會的互動較少，還可以加強。大學是社會的良心，負擔有促進社會進步的責任，因此對社會風氣的評論、對公共政策的建議，並將學術研究的成果以淺顯的語言向社會介紹，也是台大作為最具代表性大學必須負擔的社會責任。我如果能作為台大的校長，將鼓勵老師針對各種社會現象、公共政策例如教育政策、全民健保、水資源、水土保持、社會福利等，發表意見或召開研討會，提出可行的方法，作為社會的參考。

最後我的理想是經營台大成為一個真正的大家庭，讓每個老師員工各敬其業、各司其職、相互尊重、相互信賴、相互協助。我會積極的提升行政效率，並推動「走動式的管理」，主管們常常走上第一線來了解問題、發現問題，並積極的解決問題。我也會在網路上設立「校長信箱」，專門及時來處理全校師生同仁所抱怨的事情。　

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