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英語版のTI製品についての情報を翻訳したこの資料は、製品の概要を確認する目的で便宜的に提供しているものです。該当する正式な英語版の最新情報は、www.ti.comで閲覧でき、その内容が常に優先されます。TIでは翻訳の正確性および妥当性につきましては一切保証いたしません。実際の設計などの前には、必ず最新版の英語版をご参照くださいますようお願いいたします。

English Data Sheet: SCDS238

TS3A24159JAJSH41F –MARCH 2007–REVISED SEPTEMBER 2019

参参考考資資料料

TS3A24159 0.3Ω、、2 チチャャネネルル SPDT のの双双方方向向アアナナロロググ・・ススイイッッチチデデュュアアルル・・チチャャネネルル 2:1 ママルルチチププレレククササ / デデママルルチチププレレククササ

1

1 特特長長1• Break-Before-Make スイッチングを規定• 低いオン抵抗 (最大値 0.3Ω)• 低い電荷注入• 非常に優れたオン抵抗マッチング• 低い全高調波歪 (THD)• 1.65V～ 3.6V の単一電源で動作• 制御入力は 1.8V ロジック互換• JESD 78、Class II 準拠で 100mA 超のラッチアッ

プ性能• ESD 性能は JESD 22 に準拠しテスト済み

– 2000V、人体モデル (A114-B、クラス II)– 1000V、デバイス帯電モデル (C101)

2 アアププリリケケーーシショョンン• 携帯電話• パーソナル・デジタル・アシスタント (PDA)• ポータブル計測装置• オーディオおよびビデオ信号のルーティング• 低電圧のデータ収集システム• 通信用回路• モデム• ハードディスク• コンピュータ・ペリフェラル• ワイヤレス端末およびペリフェラル

3 概概要要TS3A24159 は 2 チャネルの単極双投 (SPDT) 双方向

アナログ・スイッチで、1.65V～3.6V で動作するよう設計さ

れています。このデバイスはオン抵抗が低く、オン抵抗

マッチングが非常に優れており、Break-Before-Make 機

能によってチャネル間の信号転送時に信号が歪むのを防

ぎます。このデバイスは全高調波歪み (THD) 特性が非常

に優れており、オン抵抗が低く、極めて低消費電力です。

これらの特長も含めた多くの特長から、このデバイスは各

種の市場、多くの種類のアプリケーションに適しています。

製製品品情情報報(1)

型型番番パパッッケケーージジ本本体体ササイイズズ（（公公称称））

TS3A24159VSSOP (10) 3.00mm×3.00mmVSON (10) 3.00mm×3.00mmDSBGA (10) 1.86mm×1.35mm

(1) 利用可能なすべてのパッケージについては、このデータシートの末尾にある注文情報を参照してください。

機機能能ブブロロッックク図図

http://www-s.ti.com/sc/techlit/SCDS238.pdf

http://www.tij.co.jp/product/jp/ts3a24159?qgpn=ts3a24159

http://www.tij.co.jp/product/jp/TS3A24159?dcmp=dsproject&hqs=pf

http://www.tij.co.jp/product/jp/TS3A24159?dcmp=dsproject&hqs=sandbuy&#samplebuy

http://www.tij.co.jp/product/jp/TS3A24159?dcmp=dsproject&hqs=td&#doctype2

http://www.tij.co.jp/product/jp/TS3A24159?dcmp=dsproject&hqs=sw&#desKit

http://www.tij.co.jp/product/jp/TS3A24159?dcmp=dsproject&hqs=support&#community

http://www.tij.co.jp/tool/jp/TIDM-VOICEBANDAUDIO?dcmp=dsproject&hqs=rd

http://www.ti.com/applications/personal-electronics/mobile-phones/overview.html

http://www.ti.com/applications/personal-electronics/portable-electronics/overview.html

http://www.ti.com/solution/routing-transport-systems-for-broadcast

http://www.ti.com/solution/data-acquisition-daq

http://www.ti.com/solution/communication-switch

http://www.ti.com/solution/modem-cable-dsl-gfast

http://www.ti.com/applications/personal-electronics/connected-peripherals-printers/overview.html

2

TS3A24159JAJSH41F –MARCH 2007–REVISED SEPTEMBER 2019 www.ti.com

Copyright © 2007–2019, Texas Instruments Incorporated

目目次次1 特特長長.......................................................................... 12 アアププリリケケーーシショョンン ......................................................... 13 概概要要.......................................................................... 14 改改訂訂履履歴歴................................................................... 25 Pin Configuration and Functions ......................... 36 Specifications......................................................... 5

6.1 Absolute Maximum Ratings ..................................... 56.2 ESD Ratings.............................................................. 56.3 Recommended Operating Conditions....................... 56.4 Thermal Information .................................................. 66.5 Electrical Characteristics for 3-V Supply .................. 66.6 Electrical Characteristics for 2.5-V Supply ............... 76.7 Electrical Characteristics for 1.8-V Supply ............... 86.8 Switching Characteristics for a 3-V Supply............. 106.9 Switching Characteristics for a 2.5-V Supply.......... 106.10 Switching Characteristics for a 1.8-V Supply........ 106.11 Typical Characteristics .......................................... 11

7 Parameter Measurement Information ................ 138 Detailed Description ............................................ 17

8.1 Overview ................................................................. 178.2 Functional Block Diagram ....................................... 178.3 Feature Description................................................. 178.4 Device Functional Modes........................................ 17

9 Application and Implementation ........................ 189.1 Application Information............................................ 189.2 Typical Application ................................................. 18

10 Power Supply Recommendations ..................... 2011 Layout................................................................... 20

11.1 Layout Guidelines ................................................. 2011.2 Layout Example .................................................... 20

12 デデババイイススおおよよびびドドキキュュメメンントトののササポポーートト ....................... 2112.1 ドキュメントのサポート .............................................. 2112.2 コミュニティ・リソース ................................................ 2112.3 商標 ....................................................................... 2112.4 静電気放電に関する注意事項 ................................ 2112.5 Glossary ................................................................ 21

13 メメカカニニカカルル、、パパッッケケーージジ、、おおよよびび注注文文情情報報 ................. 21

4 改改訂訂履履歴歴資料番号末尾の英字は改訂を表しています。その改訂履歴は英語版に準じています。

Revision E (March 2019) かからら Revision F にに変変更更 Page

• Changed the YZP package image view From: Top-Through View To: Bottom View ............................................................ 4

Revision D (July 2015) かからら Revision E にに変変更更 Page

• Changed the YZP Package image and deleted the YZP Package Terminal Assignments table .......................................... 4• Changed Turnon time VCC (Full) value From: 2.3 V to 2.7 V To: 2.7 V to 3.6 V in Switching Characteristics for a 3-V

Supply ................................................................................................................................................................................... 10• Changed Turnon time VCC (Full) value From: 2.3 V to 2.7 V To: 2.7 V to 3.6 V in Switching Characteristics for a 2.5-

V Supply ............................................................................................................................................................................... 10

Revision C (February 2008) かからら Revision D にに変変更更 Page

• 「ピン構成および機能」セクション、「ESD 定格」表、「機能説明」セクション、「デバイスの機能モード」セクション、「アプリケーションと実装」セクション、「電源に関する推奨事項」セクション、「レイアウト」セクション、「デバイスおよびドキュメントのサポート」セクション、「メカニカル、パッケージ、および注文情報」セクション追加........................................................................................ 1

• ドキュメント全体で、JEDEC 標準に合わせて V+ を VCC に変更 ................................................................................................. 1

http://www.ti.com/product/ts3a24159?qgpn=ts3a24159

http://www.ti.com

COM1

VCC

NO1

IN1

NC1

NO2

COM2

IN2

NC2

GND

10

9

8

7

6

1

2

3

4

5

VCC

NO1

COM1

IN1

NC1

1

2

3

4

5

NO2

COM2

IN2

NC2

GND

10

9

8

7

6

3

TS3A24159www.ti.com JAJSH41F –MARCH 2007–REVISED SEPTEMBER 2019


5 Pin Configuration and Functions

DGS Package10-Pin VSSOP

Top View

DRC Package10-Pin VSON

Top View

Pin Functions - VSSOP and VSONPIN

I/O DESCRIPTIONNO. NAME1 VCC — Power Supply2 NO1 I/O Normally Open Signal Path3 COM1 I/O Common Signal Path4 IN1 I Digital Control to Connect COM to NO or NC5 NC1 I/O Normally Closed Signal Path6 GND — Ground7 NC2 I/O Normally Closed Signal Path8 IN2 I Digital Control to Connect COM to NO or NC9 COM2 I/O Common Signal Path10 NO2 I/O Normally Open Signal Path


http://www.ti.com

1 2 3

A

B

C

D

Not to scale

NC1 GND NC2

IN1 IN2

COM1 COM2

NO1 VCC NO2

4



YZP Package10-Pin DSBGABottom View

Pin Functions - DSBGAPIN

I/O DESCRIPTIONNO. NAMEA1 NC1 I/O Normally Closed Signal PathA2 GND — GroundA3 NC2 I/O Normally Closed Signal PathB1 IN1 I Digital Control to Connect COM to NO or NCB3 IN2 I Digital Control to Connect COM to NO or NCC1 COM1 I/O Common Signal PathC3 COM2 I/O Common Signal PathD1 NO1 I/O Normally Open Signal PathD2 VCC — Power SupplyD3 NO2 I/O Normally Open Signal Path


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5



(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(3) All voltages are with respect to ground, unless otherwise specified.(4) This value is limited to 5.5 V maximum.(5) Pulse at 1-ms duration <10% duty cycle

6 Specifications

6.1 Absolute Maximum Ratingsover operating free-air temperature range (unless otherwise noted) (1) (2)

MIN MAX UNITVCC Supply voltage (3) –0.5 3.6 VVNCVNOVCOM

Signal voltage (3) (4) –0.5 VCC + 0.5 V

II/OK Analog port diode current VNC, VNO, VCOM < 0 –50 50 mAINCINOICOM

ON-state switch currentVNC, VNO, VCOM = 0 to VCC

–300 300mA

ON-state peak switch current (5) –500 500

VIN Digital input voltage –0.5 3.6 VIIK Digital input clamp current (3) VI < 0 –50 mAICC Continuous current through VCC 100 mAIGND Continuous current through GND –100 mATstg Storage temperature –65 150 °C

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.2 ESD RatingsVALUE UNIT

V(ESD) Electrostatic dischargeHuman body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 2000

VCharged-device model (CDM), per JEDEC specification JESD22-C101 orANSI/ESDA/JEDEC JS-002 (2) 1000

6.3 Recommended Operating Conditionsover operating free-air temperature range (unless otherwise noted)

MIN MAX UNITVCC Supply Voltage 1.65 3.6 VVNCVNOVCOM

Signal Voltage 0 VCC V

VIN Digital Input Voltage 0 VCC V


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6



(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport.

6.4 Thermal Information

THERMAL METRIC (1)TS3A24159

UNITDGS (VSSOP) DRC (VSON) YZP (DSBGA)10 PINS 10 PINS 10 PINS

RθJA Junction-to-ambient thermal resistance 154 49.4 90.9 °C/WRθJC(top) Junction-to-case (top) thermal resistance 37.9 71.2 0.3 °C/WRθJB Junction-to-board thermal resistance 83.6 23.8 8.3 °C/WψJT Junction-to-top characterization parameter 1.4 2.2 3.2 °C/WψJB Junction-to-board characterization parameter 82.2 23.8 8.3 °C/WRθJC(bot) Junction-to-case (bottom) thermal resistance N/A 6.1 N/A °C/W

(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,

Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

6.5 Electrical Characteristics for 3-V SupplyVCC = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)

PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNITANALOG SWITCHAnalog signalrange

VCOM, VNO,VNC

0 VCC V

Peak ONresistance rpeak

0 ≤ (VNO or VNC) ≤ VCC,ICOM = –100 mA,

Switch ON,See Figure 10

25°C2.7 V

0.2 0.3Ω

Full 0.35

ON-stateresistance ron

VNO or VNC = 2 V,ICOM = –100 mA,


25°C2.7 V

0.26 0.3Ω

Full 0.34ON-stateresistance matchbetween channels

ΔronVNO or VNC = 2 V, 0.8 V,ICOM = –100 mA,


25°C2.7 V

0.01 0.05Ω

Full 0.05

ON-stateresistance flatness ron(flat)


Switch ON,See Figure 10 25°C

2.7 V0.13 Ω

VNO or VNC = 2 V, 0.8 V,ICOM = –100 mA,


25°C 0.01 0.04Ω

Full 0.05NC, NOOFF leakagecurrent

INC(OFF),INO(OFF)

VNC or VNO = 1 V, VCOM = 3 V,orVNC or VNO = 3 V, VCOM = 1 V,

Switch OFF,See Figure 11

25°C3.6 V

–10 10nA

Full –50 50

NC, NOON leakagecurrent

INC(ON),INO(ON)

VNC or VNO = 1 V, VCOM = Open,orVNC or VNO = 3 V, VCOM = Open,


25°C3.6 V

–10 10nA

Full –100 100

COMON leakagecurrent

ICOM(ON)

VNC or VNO = Open, VCOM = 1 V,orVNC or VNO = Open, VCOM = 3 V,


25°C3.6 V

–10 10nA

Full –100 100

DIGITAL CONTROL INPUTS (IN1, IN2) (2)

Input logic high VIH Full 1.4 VInput logic low VIL Full 0.5 V

Input leakagecurrent IIH, IIL VI = 3.6 V or 0

25°C3.6 V

–40 5 40nA

Full –50 50


http://www.ti.com

http://www.ti.com/lit/pdf/spra953

http://www.ti.com/lit/pdf/SCBA004

7



Electrical Characteristics for 3-V Supply (continued)VCC = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)

PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNITDYNAMIC

Charge injection QCVGEN = 0,RGEN = 0,

CL = 1 nF,See Figure 19 25°C 3 V 9 pC

NC, NOOFF capacitance

CNC(OFF),CNO(OFF)

VNC or VNO = VCC or GND,Switch OFF, See Figure 13 25°C 3 V 90 pF

NC, NOON capacitance

CNC(ON),CNO(ON)

VNC or VNO = VCC or GND,Switch ON, See Figure 13 25°C 3 V 224 pF

COMON capacitance CCOM(ON)

VCOM = VCC or GND,Switch ON, See Figure 13 25°C 3 V 250 pF

Digital inputcapacitance CI VIN = VCC or GND, See Figure 13 25°C 3 V 2 pF

Bandwidth BW RL = 50 Ω,Switch ON, See Figure 16 25°C 3 V 23 MHz

OFF isolation OISORL = 50 Ω,f = 1 MHz, See Figure 17 25°C 3 V –72 dB

Crosstalk XTALKRL = 50 Ω,f = 1 MHz, See Figure 18 25°C 3 V –96 dB

Total harmonicdistortion THD RL = 600 Ω,

CL = 50 pF,

f = 20 Hz to20 kHz,See Figure 20

25°C 3 V 0.003%

SUPPLY

Positive supplycurrent ICC VIN = VCC or GND

25°C 3.6 V 15 100 nAFull 1 μA

(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.6 Electrical Characteristics for 2.5-V SupplyVCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)


VCOM, VNO,VNC

0 VCC V



Switch ON,SeeFigure 10

25°C2.3 V

0.35Ω

Full 0.45


VNO or VNC = 1.8 V,ICOM = –8 mA,


25°C2.3 V Ω

Full 0.4

ON-stateresistance matchbetween channels

ΔronVNO or VNC = 1.8 V, 0.8 V,ICOM = –8 mA,


25°C2.3 V

0.01 0.05Ω

Full 0.05 0.05

ON-stateresistance flatness ron(flat)



25°C

2.3 V

0.05

ΩVNO or VNC = 0.8 V, 1.8 V,ICOM = –8 mA,


25°C 0.03 0.08

Full 0.1

NC, NOOFF leakagecurrent

INC(OFF),INO(OFF)

VNC or VNO = 0.5 V, VCOM = 2.2 V,orVNC or VNO = 2.2 V, VCOM = 0.5 V,

Switch OFF,SeeFigure 11

25°C2.7 V

–10 10nA

Full –50 50


INC(ON),INO(ON)

VNC or VNO = 0.5 V, VCOM = Open,orVNC or VNO = 2.2 V, VCOM = Open,


25°C2.7 V

–10 10nA

Full –100 100


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8



Electrical Characteristics for 2.5-V Supply (continued)VCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)

PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT

(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

ANALOG SWITCH (continued)COMON leakagecurrent

ICOM(ON)

VNC or VNO = Open, VCOM = 0.5 V,orVNC or VNO = Open, VCOM = 2.2 V,


25°C2.7 V

–10 10nA

Full –100 100


Input logic high VIH Full 1.25 VInput logic low VIL Full 0.5 V


25°C2.7 V

–40 5 40nA

Full –50 50DYNAMIC


CL = 1 nF,SeeFigure 19

25°C 2.5 V 8 pC


CNC(OFF),CNO(OFF)

VNC or VNO = VCC or GND,Switch OFF,

SeeFigure 13 25°C 2.5 V 90 pF


CNC(ON),CNO(ON)

VNC or VNO = VCC or GND,Switch ON,



VCOM = VCC or GND,Switch ON,


Digital inputcapacitance CI VI = VCC or GND, See

Figure 13 25°C 2.5 V 2 pF

Bandwidth BW RL = 50 Ω,Switch ON,

SeeFigure 16 25°C 2.5 V 23 MHz

OFF isolation OISORL = 50 Ω,f = 1 MHz,

SeeFigure 17 25°C 2.5 V –72 dB

Crosstalk XTALKRL = 50 Ω,f = 1 MHz,

SeeFigure 18 25°C 2.5 V –96 dB


CL = 50 pF,

f = 20 Hz to20 kHz,SeeFigure 20

25°C 2.5 V 0.003%

SUPPLY

Positive supplycurrent ICC VI = VCC or GND

25°C2.7 V

10 100nA

Full 700

(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum

6.7 Electrical Characteristics for 1.8-V SupplyVCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted) (1)


VCOM, VNO,VNC

0 VCC V


0 ≤ (VNO or VNC) ≤VCC,ICOM = –2 mA,


25°C1.65 V

0.4 0.7Ω

Full 0.8


VNO or VNC = 1.5 V,ICOM = –2 mA,


25°C1.65 V

0.3 0.45Ω

Full 0.5


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9



Electrical Characteristics for 1.8-V Supply (continued)VCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted) (1)

PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNIT

(2) All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

ANALOG SWITCH (continued)ON-stateresistance matchbetweenchannels

ΔronVNO or VNC = 0.6 V, 1.5 V,ICOM = –2 mA,


25°C

1.65 V

0.02 0.04

ΩFull 0.05

ON-stateresistanceflatness

ron(flat)


Switch ON,See Figure 10 25°C

1.65 V0.13

ΩVNO or VNC = 0.6 V, 1.5 V,ICOM = –8 mA,


25°C 0.08 0.15Full 0.2

NC, NOOFF leakagecurrent

INC(OFF),INO(OFF)

VNC or VNO = 0.3 V, VCOM = 1.65 V,orVNC or VNO = 1.65 V, VCOM = 0.3 V,

Switch OFF,See Figure 11

25°C1.95

–10 10nA

Full –50 50


INC(ON),INO(ON)

VNC or VNO = 0.3 V, VCOM = Open,orVNC or VNO = 1.65 V, VCOM = Open,


25°C1.95 V

–10 10nA

Full –100 100

COMON leakagecurrent

ICOM(ON)

VNC or VNO = Open, VCOM = 0.3 V,orVNC or VNO = Open, VCOM = 1.65 V,


25°C1.95 V

–10 10nA

Full –100 100


Input logic high VIH Full 1 VInput logic low VIL Full 0.4 V


25°C1.95 V

–40 5 40nA

Full –50 50DYNAMIC


CL = 1 nF,See Figure 19 25°C 1.8 V 5 pC


CNC(OFF),CNO(OFF)

VNC or VNO = VCC or GND,Switch OFF, See Figure 13 25°C 1.8 V 90 pF


CNC(ON),CNO(ON)

VNC or VNO = VCC or GND,Switch ON, See Figure 13 25°C 1.8 V 250 pF


VCOM = VCC or GND,Switch ON, See Figure 13 25°C 1.8 V 250 pF

Digital inputcapacitance CIN VI = VCC or GND, See Figure 13 25°C 1.8 V 2 pF

Bandwidth BW RL = 50 Ω,Switch ON, See Figure 16 25°C 1.8 V 23 MHz

OFF isolation OISORL = 50 Ω,f = 1 MHz, See Figure 17 25°C 1.8 V –73 dB

Crosstalk XTALKRL = 50 Ω,f = 1 MHz, See Figure 18 25°C 1.8 V –97 dB


CL = 50 pF,

f = 20 Hz to 20kHz,See Figure 20

25°C 1.8 V 0.005%

SUPPLY

Positive supplycurrent ICC VI = VCC or GND

25°C1.95 V

100 50nA

Full 700


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10




6.8 Switching Characteristics for a 3-V SupplyVCC = 2.7 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted) (1)

PARAMETER TEST CONDITIONS TA VCC MIN TYP MAX UNITDynamic

Turnon time tONVCOM = VCC,RL = 50 Ω

CL = 35 pF,See Figure 14

25°C 3.0 V 20 35

nsFull

2.7 Vto

3.6 V40

Turnoff time tOFFVCOM = VCC,RL = 50 Ω


25°C 3.0 V 12 25

nsFull

2.7 Vto

3.6 V30

Break-before-make time tBBM

VNC = VNO = VCC,RL = 50 Ω


25°C 3.0 V 1 10 25

nsFull

2.7 Vto

3.6 V0.5 30


6.9 Switching Characteristics for a 2.5-V SupplyVCC = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted) (1)




25°C 2.5 V 23 45

nsFull

2.3 Vto

2.7 V50



25°C 2.5 V 17 27

nsFull

2.3 Vto

2.7 V30




25°C 2.5 V 2 14 30

nsFull

2.3 Vto

2.7 V1 35


6.10 Switching Characteristics for a 1.8-V SupplyVCC = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted) (1)




25°C 1.8 V 53 75

nsFull

1.65 Vto

1.96 V80



25°C 1.8 V 24 35

nsFull

1.65 Vto

1.96 V40




25°C 1.8 V 2 30 40

nsFull

1.65 Vto

1.96 V1 50


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0

5

10

15

20

25

30

35

1.65 1.8 1.95 2.3 2.5 2.7 3 3.3 3.6

Supply Voltage (V )CC

tON

tOFF

t/t

(ns

)O

NO

FF

–20

–18

–16

–14

–12

–10

–8

–6

–4

–2

0

1E+04 1E+05 1E+06 1E+07 1E+08 1E+09

Frequency (Hz)

Gain

(dB

)

3.0 V

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.0

0

0.1

6

0.3

2

0.4

9

0.6

5

0.8

1

0.9

7

1.1

3

1.3

0

1.4

6

1.6

2

1.7

8

1.9

4

2.1

1

2.2

7

2.4

3

2.5

9

– °40 C

25°C

85°C

r(

)o

nΩ

V (V)COM

–300

–250

–200

–150

–100

-50

0

50

0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.5 2.7 3.0

V (V)COM

Q(p

C)

C1.8 V

2.5 V

3 V

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.400

0.450

0.500

0.0

0

0.1

0

0.2

0

0.3

0

0.4

0

0.5

0

0.5

9

0.6

9

0.7

9

0.8

9

0.9

9

1.0

9

1.1

9

1.2

9

1.3

9

1.4

9

1.5

8

V (V)COM

r(

)o

nΩ

– °40 C

25°C

85°C

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.400

0.0

0

0.1

4

0.2

8

0.4

1

0.5

5

0.6

9

0.8

3

0.9

7

1.1

0

1.2

4

1.3

8

1.5

2

1.6

6

1.7

9

1.9

3

2.0

7

2.2

1

r(

)o

nΩ

V (V)COM

– °40 C

25°C

85°C

11



6.11 Typical Characteristics

Figure 1. ron vs VCOM(VCC = 1.65 V)



Figure 4. Charge Injection (QC) vs VCOM(TA = 25°C)

Figure 5. tON and tOFF vs Supply Voltage(TA = 25°C)

Figure 6. Bandwidth


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0.000

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.008

0.009

1E+00 1E+01 1E+02 1E+03 1E+04 1E+05

Frequency (Hz)

TH

D(%

)

1.8 V

2.5 V

3.0 V

1.8V

2.5V

3.0V

–120

–100

–80

–60

–40

–20

0

1E+04 1E+05 1E+06 1E+07 1E+08 1E+09

Frequency (Hz)

Att

en

uati

on

(d

B)

–90

–80

–70

–60

–50

–40

–30

–20

–10

0

1E+04 1E+05 1E+06 1E+07 1E+08 1E+09

Frequency (Hz)

Att

en

uati

on

(d

B)

1.8 V

2.5 V

3.0 V

12



Typical Characteristics (continued)

Figure 7. OFF Isolation Figure 8. Crosstalk

Figure 9. Total Harmonic Distortion vs Frequency


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Channel ON

ON-State Leakage Current

VI = VIH or V IL

VCC

GND

NC

VI

NO

COMVCOM

VNO

VNC

+

+

IN

Channel OFF

OFF-State Leakage Current

VI = VIH or V IL

VCC

GND

NC

VI

NO

COM VCOM

VNO

VNC

+

+

+

IN

V

I

r

CC

COM

on =ICOM

GND

Channel ON

NC

VI

NO

COM VCOM

IV = VIH or V IL

V

V

NO

NC

+

+

IN

VCOM –VNO or VNCΩ

13



7 Parameter Measurement Information

Figure 10. ON-State Resistance

Figure 11. OFF-State Leakage Current(INC(OFF), INC(PWROFF), INO(OFF), INO(PWROFF), ICOM(OFF), ICOM(PWROFF))

Figure 12. ON-State Leakage Current (ICOM(ON), INC(ON), INO(ON))


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VCC

GND

NC or NO

VNC or VNO

VI

NC or NO

COM

VCOM

CL(2) RL

tBBM

50%

90% 90%

Logic

Input

(V )I

(VCOM)

VCC

0

IN

VNC or VNO = VCCR = 50L Ω

C = 35 pFL

Logic

Input(1)

CL(2) RL

VCOM

VCC

GND

NC or NO VNC or VNO

VI

NC or NO

COM

(1)

VCC

VCOM

50 W

RL CL

35 pFtON

TEST

VCC50 W 35 pFtOFF

50%

tON tOFF

50%

90% 90%

Logic

Input

(VI)

VCC

(VNC or VNO)

0

CL(2) RL

IN

COM

BIAS

NOVCapacitance

Meter V = V or GND andBIAS CC

V = V or V

Capacitance is measured at NO,IN IH IL

COM, and IN inputs during ON

and OFF conditions.

VCC

COM

NO

IN

14



Figure 13. Capacitance CI, CNC(OFF), CNO(OFF), CNC(ON), CNO(ON))

(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,tf < 5 ns.

(2) CL includes probe and jig capacitance.

Figure 14. Turn-On (tON) and Turn-Off Time (tOFF)

(1) All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,tf < 5 ns.

(2) CL includes probe and jig capacitance.

Figure 15. Break-Before-Make Time (tBBM)


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NC

NO

50 W

50 W

VNC

VCOM

Channel ON: NC to COM

Network Analyzer Setup

Source Power = 0 dBm

(632-mV P-P at 50-Wload)

50 W

GND

VNO

Source

Signal

Channel OFF: NO to COM

Network Analyzer

VIN

+

VIN = VCCor GND

IN

DC Bias = 350 mV

VCC

NC

NO

COM

VNC

VCOM

Channel OFF: NC to COM



(632-mV P-P at 50-Wload)

50 W

VCC

GND

50 W

50 W

Network Analyzer

Source

Signal

VI

+

VI = VCCor GND

IN

DC Bias = 350 mV

VCC

GND

NC

VI

NO

COM

50 W

50 W

VNC

VCOM

Channel ON: NC to COM



(632-mV P-P at 50-W load)

DC Bias = 350 mV

Network Analyzer

Source

Signal

+

VI = VCC or GND

IN

15



Figure 16. Bandwidth (BW)

Figure 17. OFF Isolation (OISO)

Figure 18. Crosstalk (XTALK)


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GND

NO

COM

10 µF

CL(1)

RL10 µF

INVI

600 W600 W

600 W

Audio Analyzer

Source

Signal

Source Signal = 20 Hz to 20 kHz

Channel ON: COM to NO VI = VIH or V IL RL = 600 W

CL = 50 pF

V+/2

VCC

VSOURCE = VCC P-P

GND

NC or NO

IN

RGEN

VI

NC or NO

COM VCOM

CL(2)

OFF

VCOM

ON OFF

DVCOMVGEN

+

VI = VIH or V IL

CL = 1 nF

VGEN = 0 to VCC

RGEN = 0

QC = CL ´DVCOM

VIH

VIL

Logic

Input

(VI)

Logic

Input(1)

VCC

16



A. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, ZO = 50 Ω, tr < 5 ns,tf < 5 ns.

B. CL includes probe and jig capacitance.

Figure 19. Charge Injection (QC)

A. CL includes probe and jig capacitance.

Figure 20. Total Harmonic Distortion (THD)


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IN1

COM1

NC1

NO1

SPDT

Logic

Control

IN2

COM2

NC2

NO2

SPDT

Logic

Control

17



8 Detailed Description

8.1 OverviewThe TS3A24159 is a 2-channel single-pole double-throw (SPDT) bidirectional analog switch that is designed tooperate from 1.65 V to 3.6 V. It offers low ON-state resistance and excellent ON-state resistance matching withthe break-before-make feature, to prevent signal distortion during the transferring of a signal from one channel toanother. The device has excellent total harmonic distortion (THD) performance, low ON-state resistence, andconsumes very low power. These are some of the features make this device suitable for a variety of markets andmany different applications.

8.2 Functional Block Diagram

8.3 Feature DescriptionThe TS3A24159 device is bidirectional with two single-pole, double-throw switches. Each of the two switches arecontrolled independently by two digital signals.

8.4 Device Functional Modes

Table 1. Function Table

IN NC TO COM,COM TO NC

NO TO COM,COM TO NO

L ON OFFH OFF ON


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TS3A24159

VCC

IN1

IN2

COM1

COM4

GND

NO1

System

Controller

Device 1

Device 2

0.1 PF0.1 PF

3.3 V

Signal

Path

Switch

Control

Logic NC1

Device 3NO2

NC2 Device 4

COM2

18



9 Application and Implementation

NOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.

9.1 Application InformationThe switch of the TS3A23159 device is bidirectional. Hence, NO, NC and COM pins can be used as both inputsor outputs.

9.2 Typical Application

9.2.1 Design RequirementsEnsure that all of the signals passing through the switch are with in the specified ranges to ensure properperformance.

Table 2. Design ParametersMIN MAX UNIT

VCC Supply Voltage 1.65 3.6 VVNCVNOVCOM

Signal Voltage 0 VCC V

VIN Digital Input Voltage 0 VCC V


http://www.ti.com

0.000

0.050

0.100

0.150

0.200

0.250

0.300

0.350

0.0

0

0.1

6

0.3

2

0.4

9

0.6

5

0.8

1

0.9

7

1.1

3

1.3

0

1.4

6

1.6

2

1.7

8

1.9

4

2.1

1

2.2

7

2.4

3

2.5

9

– °40 C

25°C

85°C

r(

)o

nΩ

V (V)COM

19



9.2.2 Detailed Design ProcedureThe TS3A23159 device can be properly operated without any external components. However, it is recommendedthat unused pins must be connected to ground through a 50-Ω resistor to prevent signal reflections back into thedevice. It is also recommended that the digital control pins (IN1 and IN2) be pulled up to VCC or down to GND toavoid undesired switch positions that could result from the floating pin.

Select the appropriate supply voltage to cover the entire voltage swing of the signal passing through the switchbecause the TS3A23159 input/output signal swing through NO and COM are dependant of the supply voltageVCC.

9.2.3 Application Curve

Figure 21. rON vs VCOM


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0603 Cap

VC

C

= VIA to GND Plane

To Device 1

To Device 3COM1

To Device 3NO1

VCC

To Device 3IN1

To Device 3NC1

To Device 1 or 2

To System

To Device 2

To Device 3 or 4

To Device 3IN2

To Device 3COM2

To Device 3NC2

To Device 3GND

To System

To Device 4

To Device 3

To Device 3NO2

TS3A24159

20

TS3A24159JAJSH41F –MARCH 2007–REVISED SEPTEMBER 2019 www.tij.co.jp


10 Power Supply Recommendations• Proper power-supply sequencing is recommended for all CMOS devices.• Do not exceed the absolute maximum ratings, because stresses beyond the listed ratings can cause

permanent damage to the device.• Always sequence VCC on first, followed by NO or COM.• Although it is not required, power-supply bypassing improves noise margin and prevents switching noise

propagation from the VCC supply to other components.• A 0.1-μF capacitor, connected from VCC to GND, is adequate for most applications.

11 Layout

11.1 Layout GuidelinesTo ensure reliability of the device, following common printed-circuit board layout guidelines is recommended.Bypass capacitors must be used on power supplies. Short trace lengths should be used to avoid excessiveloading.

11.2 Layout Example

Figure 22. Layout Example


http://www.tij.co.jp

21

TS3A24159www.tij.co.jp JAJSH41F –MARCH 2007–REVISED SEPTEMBER 2019


12 デデババイイススおおよよびびドドキキュュメメンントトののササポポーートト

12.1 ドドキキュュメメンントトののササポポーートト

12.1.1 関関連連資資料料関連資料については、『低速またはフローティングCMOS入力の影響』、SCBA004 を参照してください。

12.2 ココミミュュニニテティィ・・リリソソーーススTI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straightfrom the experts. Search existing answers or ask your own question to get the quick design help you need.

Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and donot necessarily reflect TI's views; see TI's Terms of Use.

12.3 商商標標E2E is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.

12.4 静静電電気気放放電電にに関関すするる注注意意事事項項これらのデバイスは、限定的なESD（静電破壊）保護機能を内蔵しています。保存時または取り扱い時は、MOSゲートに対する静電破壊を防止するために、リード線同士をショートさせておくか、デバイスを導電フォームに入れる必要があります。

12.5 GlossarySLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

13 メメカカニニカカルル、、パパッッケケーージジ、、おおよよびび注注文文情情報報以降のページには、メカニカル、パッケージ、および注文に関する情報が記載されています。この情報は、そのデバイスについて利用可能な最新のデータです。このデータは予告なく変更されることがあり、ドキュメントが改訂される場合もあります。本データシートのブラウザ版を使用されている場合は、画面左側の説明をご覧ください。


http://www.tij.co.jp


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http://www.ti.com/corp/docs/legal/termsofuse.shtml

http://www.ti.com/lit/pdf/SLYZ022

重重要要ななおお知知ららせせとと免免責責事事項項

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TI の製品は、TI の販売条件（www.tij.co.jp/ja-jp/legal/termsofsale.html）、または ti.com やかかる TI 製品の関連資料などのいずれかを通じて提供する適用可能な条項の下で提供されています。TI がこれらのリソースを提供することは、適用されるTI の保証または他の保証の放棄の拡大や変更を意味するものではありません。IMPORTANT NOTICE

Copyright © 2019, Texas Instruments Incorporated日本語版日本テキサス・インスツルメンツ株式会社

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PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead finish/Ball material

(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TS3A24159DGSR ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (L8Q, L8R)

TS3A24159DGSRG4 ACTIVE VSSOP DGS 10 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 85 (L8Q, L8R)

TS3A24159DRCR ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ZWS

TS3A24159DRCRG4 ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 ZWS

TS3A24159YZPR ACTIVE DSBGA YZP 10 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 L87

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to twolines if the finish value exceeds the maximum column width.

http://www.ti.com/product/TS3A24159?CMP=conv-poasamples#samplebuy





PACKAGE OPTION ADDENDUM

www.ti.com 10-Dec-2020

Addendum-Page 2

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TS3A24159DGSR VSSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

TS3A24159DRCR VSON DRC 10 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

TS3A24159YZPR DSBGA YZP 10 3000 178.0 9.2 1.49 1.99 0.63 4.0 8.0 Q2

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Nov-2020

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TS3A24159DGSR VSSOP DGS 10 2500 358.0 335.0 35.0

TS3A24159DRCR VSON DRC 10 3000 853.0 449.0 35.0

TS3A24159YZPR DSBGA YZP 10 3000 220.0 220.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 18-Nov-2020

Pack Materials-Page 2

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PACKAGE OUTLINE

C0.5 MAX

0.190.15

1.5TYP

1 TYP

0.5TYP

0.5 TYP10X 0.25

0.21

B E A

D

DSBGA - 0.5 mm max heightYZP0010DIE SIZE BALL GRID ARRAY

4219350/B 11/2017

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M.2. This drawing is subject to change without notice.

BALL A3CORNER

SEATING PLANE

BALL TYP 0.015 C

D

C

B

A

1 2 3

0.015 C A B

SYMM

SYMM

SCALE 8.000

D: Max =

E: Max =

1.89 mm, Min =

1.39 mm, Min =

1.83 mm

1.33 mm

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EXAMPLE BOARD LAYOUT

10X ( 0.225)(0.5) TYP

(0.5) TYP

( 0.225)METAL

0.05 MAX

SOLDER MASKOPENING

METALUNDERMASK

( 0.225)SOLDER MASKOPENING

0.05 MIN


4219350/B 11/2017

NOTES: (continued) 3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. For more information, see Texas Instruments literature number SBVA017 (www.ti.com/lit/sbva017).

1

SYMM

SYMM

LAND PATTERN EXAMPLESCALE:30X

D

C

2 3

A

B

NON-SOLDER MASKDEFINED

(PREFERRED)

SOLDER MASK DETAILSNOT TO SCALE

SOLDER MASKDEFINED

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EXAMPLE STENCIL DESIGN

(0.5)TYP

(0.5) TYP

10X ( 0.25) (R0.05) TYP

METALTYP


4219350/B 11/2017

NOTES: (continued) 4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.

D

C

1 2 3

A

B

SYMM

SYMM

SOLDER PASTE EXAMPLEBASED ON 0.1 mm THICK STENCIL

SCALE:30X

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PACKAGE OUTLINE

C

TYP5.054.75

1.1 MAX

8X 0.5

10X 0.270.17

2X2

0.150.05

TYP0.230.13

0 - 8

0.25GAGE PLANE

0.70.4

A

NOTE 3

3.12.9

BNOTE 4

3.12.9

4221984/A 05/2015

VSSOP - 1.1 mm max heightDGS0010ASMALL OUTLINE PACKAGE

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not exceed 0.15 mm per side. 4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.5. Reference JEDEC registration MO-187, variation BA.

110

0.1 C A B

65

PIN 1 IDAREA

SEATING PLANE

0.1 C

SEE DETAIL A

DETAIL ATYPICAL

SCALE 3.200

www.ti.com


(4.4)

0.05 MAXALL AROUND

0.05 MINALL AROUND

10X (1.45)10X (0.3)

8X (0.5)

(R )TYP

0.05

4221984/A 05/2015


SYMM

SYMM

LAND PATTERN EXAMPLESCALE:10X

1

5 6

10

NOTES: (continued) 6. Publication IPC-7351 may have alternate designs. 7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.

METALSOLDER MASKOPENING

NON SOLDER MASKDEFINED

SOLDER MASK DETAILSNOT TO SCALE

SOLDER MASKOPENING

METAL UNDERSOLDER MASK

SOLDER MASKDEFINED

www.ti.com


(4.4)

8X (0.5)

10X (0.3)10X (1.45)

(R ) TYP0.05

4221984/A 05/2015


NOTES: (continued) 8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations. 9. Board assembly site may have different recommendations for stencil design.

SYMM

SYMM

1

5 6

10


SCALE:10X

www.ti.com

GENERIC PACKAGE VIEW

This image is a representation of the package family, actual package may vary.Refer to the product data sheet for package details.

VSON - 1 mm max heightDRC 10PLASTIC SMALL OUTLINE - NO LEAD3 x 3, 0.5 mm pitch

4226193/A

www.ti.com

PACKAGE OUTLINE

C

10X 0.300.18

2.4 0.1

2X2

1.65 0.1

8X 0.5

1.00.8

10X 0.50.3

0.050.00

A 3.12.9

B

3.12.9

(0.2) TYP4X (0.25)

2X (0.5)

VSON - 1 mm max heightDRC0010JPLASTIC SMALL OUTLINE - NO LEAD

4218878/B 07/2018

PIN 1 INDEX AREA

SEATING PLANE

0.08 C

1

5 6

10

(OPTIONAL)PIN 1 ID 0.1 C A B

0.05 C

THERMAL PADEXPOSED

SYMM

SYMM11

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.

SCALE 4.000

www.ti.com


0.07 MINALL AROUND0.07 MAX

ALL AROUND

10X (0.24)

(2.4)

(2.8)

8X (0.5)

(1.65)

( 0.2) VIATYP

(0.575)

(0.95)

10X (0.6)

(R0.05) TYP

(3.4)

(0.25)

(0.5)


4218878/B 07/2018

SYMM

1

5 6

10

LAND PATTERN EXAMPLEEXPOSED METAL SHOWN

SCALE:20X

11SYMM

NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

SOLDER MASKOPENINGSOLDER MASK

METAL UNDER

SOLDER MASKDEFINED

EXPOSED METAL

METALSOLDER MASKOPENING

SOLDER MASK DETAILS

NON SOLDER MASKDEFINED

(PREFERRED)

EXPOSED METAL

www.ti.com


(R0.05) TYP

10X (0.24)

10X (0.6)

2X (1.5)

2X(1.06)

(2.8)

(0.63)

8X (0.5)

(0.5)

4X (0.34)

4X (0.25)

(1.53)


4218878/B 07/2018

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.


EXPOSED PAD 11:

80% PRINTED SOLDER COVERAGE BY AREASCALE:25X

SYMM

1

56

10

EXPOSED METALTYP11

SYMM

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