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  • Widely-tunable, narrow-linewidth III-V/silicon hybrid external-cavity laser for coherent communication HANG GUAN,1,2,3* ARI NOVACK,1,2,3 TAL GALFSKY,2 YANGJIN MA,2 SAEED FATHOLOLOUMI,2 ALEXANDRE HORTH,2 TAM N. HUYNH,2 JOSE ROMAN,2 RUIZHI SHI,2 MICHAEL CAVERLEY,2 YANG LIU,2 THOMAS BAEHR-JONES,2 KEREN BERGMAN,1 AND MICHAEL HOCHBERG2 1Department of Electrical Engineering, Columbia University, New York, NY 10027, USA 2Elenion Technologies, New York, NY 10016, USA 3These authors contributed equally *[email protected]

    Abstract: We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a Si3N4 spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser. 2018 Optical Society of America

    OCIS codes: (250.5960) Semiconductor lasers; (250.5300) Photonic integrated circuits; (140.3600) Lasers, tunable; (060.1660) Coherent communications.

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