whi - project review 2002 - halbleiterlabor (hll) -

R. H. Richter - WHI Project Review Dec, 17th 2002

WHI - Project Review 2002WHI - Project Review 2002- Halbleiterlabor (HLL) -- Halbleiterlabor (HLL) -

Projects at HLL

Overview (list of main projects)

CCD Development for ROSITA

SDD Application (art analysis)

DEPFET pixels for TESLA and XEUSRequirements for vertex detectorsTechnology development, design, simulation, prototyping

Comparison to other vertex detector concepts

Summary


Projects at HLL (1) – High Energy PhysicsProjects at HLL (1) – High Energy Physics

ATLAS SCT Strip detectorsRequirements: Single sided strips (p in n), radiation hardness up to 3x1014 neq/cm²Concept (p in n), design, prototyping: HLLProduction: Hamamatsu, CiS (Erfurt)Status: Series production (finished by Dec 2002), Acceptance tests at HLL

ATLAS Pixel sensorsRequirements: Pixel size 50x450 µm²,

extremely radiation hard, 1x1015 neq/cm²!!Concept, technology and design: HLLProduction: CiS (Erfurt), Tesla (Czech Republic)?Status: Start of series production, HLL (support)

Linear Collider (TESLA): Thin and fast Active Pixel Sensors (see below)

CASTStart of development at HLL: 2002End: 2005Aim: Search for solar axions by use of an X-ray telescope equipped with PN-CCD (see talk by R. Kotthaus)


Projects at HLL (2) - AstrophysicsProjects at HLL (2) - Astrophysics

XMM Launch of the satellite: 1999Aim: Study of galactic and extragalactic X-ray sourcesDetector requirements: energy res., position res., time res.Instrument: PN-CCD

ROSITAStart of the development: 2000Scheduled Mission: 2007 - 2009Aim: Orbit scan 0.5~keV to 15~keVInstrument: Optimized PN-CCD with frame store region

XEUSStart of the development: 1996Scheduled start: 2015Aim: See XMM. But increased sensitivity by a factor 200, improved angular

resolution, extended energy range Instrument: Optimized PN-CCD with frame store region OR Active Pixel

Detector (DEPFET)


ROSITAROSITA

Modified Repetition of ABRIXASOrbit scan: 0.5~keV to 15~keVTo be installed on ISSAdvanced PN-CCDs (separated image andstorage areas)Prototypes produced in new laboratory

CDD Development for ROSITA and XEUSCDD Development for ROSITA and XEUS

Fast transfer of signals into the frame storeSlow (low noise) read out from the frame storeOut of time event probability: 0.2% (factor 30lower than at XMM)

Improvement of Charge Transfer Effciency (CTE)Improvement of Charge Transfer Effciency (CTE)

Charge transfer loss is by a factor of 13 smallerthan that of the XMM-CCD

No Titanium contaminationin the new CCDs by usingof HE-implantation instead of an epitaxial layer.

Low energy resolutionLow energy resolution

Al-K line 76eV FWHM C-K line 82eV FWHM

Achieved by an improved entrance window (use of <100> instead of <111>crystal orientation) and by a better electronic noise 3.5 e- rms (XMM: 4.5 e-)


Compact X-ray fluorescence spectrometerCompact X-ray fluorescence spectrometer

Manuscript: Faust I by Johann Wolfgang v. Goethe

Investigated atBundesanstalt für Materialprüfung

From the composition of the ink they concluded that parts of Faust I werecorrected at a time when Goethe already worked on Faust II.

Röntec-Spectrometer equipped with a Silicon Drift Chamber


Silicon detectors for LC vertex detector (TESLA)Silicon detectors for LC vertex detector (TESLA)

Collaboration with Unversity of Bonn (N. Wermes)

WHI-HLL: Sensor

Bonn: Read out and steering chips

Synergy with XEUS Project (MPE)


TESLA Vertexdetector TESLA Vertexdetector

Layer Module size No. Of modules

I 13 x 100 mm 1 x 8

II 22 x 125 mm 2 x 8

III 22 x 125 mm 2 x 12

IV 22 x 125 mm 2 x 16

V 22 x 125 mm 2 x 20Total 500 MPixel (bei 25x25 µm Pixelgröße)(read out speed in 50 MHz)

Options:CCDMAPSHAPSDEPFET


Detector requirements for LCDetector requirements for LC

• high position resolution (vertex reconstruction, momentum resolution)

• low radiation length of inner layers

• low power consumption (500MPixel + cooling additional material not allowed)

• high readout out speed for background suppression

• radiation tolerant

TESLA:

• pixel size (20-30 µm)2

5(+)10/p sin3/2θ µm • sensor thickness d=50µm 0.1% X0 per layer ( layer I @ r=13mm )

• DEPFET: Pmean< 1W operation @ 300 K • 50MHz, read out speed occupancy < 1%

• 100-200krad (5 years) 5 x 109 neq/cm2


Module concept with DEPFETs Module concept with DEPFETs

Steuerchips

Auslesechips

520 x 4000 pixelDEPFET-Matrix

(25 x 25µm Pixel)

Auslesechips

• Sensor area thinned down to 50 µm• Remaining frame for mechanical stability carrying readout and steering chips


DEPFET-PrincipleDEPFET-Principle

FET integrated on high ohmic n-bulk

Collection of electrons within the internal gate

Modulation of the FET current by the signal charge!

p+

p+ n+

n

n+

totally depletedn --substrate

internal gate

rear contact

source top gate drain bulk potential via axistop-gate / rear contact

V

potential m inim umfor electrons

p-channel

p+

Radiation

-

-

- -+

+

++

-

-

~1m

~300 m

Advantages: Amplification of the charge at the position of collection=> no transfer loss

Full bulk sensitivity Non structured thin entrance window (backside) Very low input capacitance => very low noise


2 4 6

0

1000

2000

3000

4000

5000

6000

Escape - Peak

K

K

# Z

ähle

r

Energie [keV]

ENC = 4.8 +/- 0.1 e-

55Fe-spectra @ 300K

Excellent noise values measured on single pixels

BioScope - imaging of tracer-marked bio-medical samples

(P. Klein and W. Neeser)

Noise: ca. 70 ENC @ 300KSlow operation (old technology)Large arrays are impossible(JFET => VP variations)Large cell size


Rectangular DEPFET pixel Rectangular DEPFET pixel detectordetector

MOS transistor instead of JFET

A pixel size of ca. 20 x 20 µm² is achievable using 3µm minimum feature size.


DEPFETDEPFET pixel matrix pixel matrix

- Read filled cells of a row- Clear the internal gates of the row completely- Read empty cells

Low power consumption

Fast random access to specific array regions

purpose

detector format

pixel size

thickness

noise

readout time/ detector

/ row

particle tracking

1.3 x 10 cm² (x 8)

520 x 4000 pixels

(x 8)

2.1 Mpix (x8)

25 µm

50 µm

~ 100 el. ENC

50 µsec20 nsec

imaging spectroscopy

7.68 x 7.68 cm²

1024 x 1024 pixels

1 Mpix

75 µm

300 ... 500 µm

4 el. ENC

1.2 msec2.5 µsec


DEPFET 6” -TechnologyDEPFET 6” -Technology

Double poly / double aluminum process on high ohmic n- substrate

along p-channel perpendicular to channel (with clear)


Pixel prototype production (6“ wafer)Pixel prototype production (6“ wafer)for XEUS and LC (TESLA)for XEUS and LC (TESLA)

Many test arrays- Circular and linear DEPFETS up to 128 x 128 pixels minimum pixel size about 30 x 30 µm² - variety of special test structures

Aim: Select design options for an optimized array operation (no charge loss, high gain, low noise, good clear operation) On base of these results => production of full size sensors

Production will be finished in spring


Potential during collection - 3D Poisson equation (Poseidon)Potential during collection - 3D Poisson equation (Poseidon) (50µm thick Si, N (50µm thick Si, NBB=10=101313cmcm-3-3,V,VBackBack=-20V)=-20V)

Depth 10µmDepth 7µmDepth 4µmDepth 1µm

So

urce

sD

rain

External (internal) Gates

n+

cle

ar

con

tact

s

Cell size 36 x 27 µm²


Potential distribution during ReadingPotential distribution during Reading

Internal Gate

Drain

Source

Back contact

2D dynamic simulation along the channel

ID adjusted to 100µA (W/L =18µm/5µm)

Vinternal Gate ca. 3V

Localized charge generation simulates a hit

DEPFET simulation – TeSCA (2D, time dependent)

hit response to a generation of 1600 electron-hole pairs


Current production statusCurrent production status

Pixel array section – Design with clockable clear gatePixel array section – Design with clockable clear gate

Status:- Poly I and II ok- Implantations (N-Side) ok- P-Side Processing started

8 lithographic steps ready

To do:- P-Side diode / entrance window- Contact openings- Metal 1 FS/BS => Measurements- Metal 2

4 / 6 mask steps until März `03 / Juni `03

Drain Gate

Clear

Cleargate

Source

1 Pixel cell


Crossing polysilicon linesCrossing polysilicon lines

Problems with demolished polysilicon lines and bad polyI/polyII insulation

Solved now


Processing thin detectorsProcessing thin detectors- the Idea -- the Idea -


Detector thinning – first resultsDetector thinning – first results

Wafer bonding – MPI f. Festkörperstrukturphysik, HalleWafer grinding – SICO GmbH, JenaAnisotropic etching – CiS gGmbH Erfurt, MPI Halbleiterlabor Munich

Thickness of detector region : 50µmof frame : 350µm

Size: 8cm x 1cm


Read out chip – test submission (Marcel Trimpl - Bonn)Read out chip – test submission (Marcel Trimpl - Bonn)- - fast current read outfast current read out - -

TSMC 0,25 µm process (ca. 60 000 transistors)contains all important parts of the design

1,5m

m

4 mm

Measurements: Very encouring results with nearly TESLA requirements !


Performance estimation of Performance estimation of TESLA vertex detector candidatesTESLA vertex detector candidates

Resolution

5(+)10/p sin3/2θ µm

Material budget

≤ 0.1% X0/l.

Read out

Speed

(50 MHz)

Power consumpt.

Radiation tolerance

Ionisation, n

Remarks

CCDSimilar as used in SLD

4.2(+)4.0/p sin3/2θ µm

+ ++

R&D

O?R&D !! ?

+?R&D

well-engineered

product –enough

Potential?

HAPSHybrid APS

7µm (-)- - + + - - + +

Back up

solution

MAPSMonolith.APS

CMOS Microelectr.

2µm (+++)

But at 50MHz ?

+

R&D

O?R&D !! + ?

+?R&D

Large area

device

Composition of dice ?

DEPFET Like CCD

+ + +

R&D

+?

R&D

+ + +?R&D

Be patient for

6-12 months


9th EUROPEAN SYMPOSIUM ON SEMICONDUCTOR DETECTORS

New Developments on Radiation Detectorstook place at Schloss Elmau, June 23 - 27, 2002


SummarySummary

o Our part in ATLAS is almost doneo Future projects: LC (TESLA), ROSITA, XEUS – encouraging CCD results

o DEPFET is promising detector candidate for future HE and astrophysics experiments. Key features: low noise, full bulk sensitivity, no charge transfer loss, low power consumption, random access within an array

o A new DEPFET 6 inch technology (2 poly/ 2 aluminum) was developed for large arrays and high speed operation.

o DEPFET Prototype production has been started and will be finished in spring ’03.o Read out electronic studies are very encouraging.o A concept for merging the DEPFET technology with a thinning technology is

proposed.

Plans for 2003: Measurement and analysis of the prototype production

New Drift Chamber and CCD submissions

whi - project review 2002 - halbleiterlabor (hll) -

Documents

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