weekly group meeting report renjie chen supervisor: prof. shadi a. dayeh
TRANSCRIPT
Weekly Group Meeting Report
Renjie Chen
Supervisor: Prof. Shadi A. Dayeh
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Integrated Electronics and Bio-interfaces Lab
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Summary
• Starting from early last week, I was working on the Ni-InGaAs diffusion study. There are several problems faced when I start to repeat the process: failure of bonding, HSQ writing condition changes, and Cl-ICP etching condition shift.
• My target was to: (1) Start with 3 set of new samples, make the bonding work
(2) Dose test for Fin writing with HSQ
(3) Modify Cl-ICP etching condition
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Integrated Electronics and Bio-interfaces Lab
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Process of Ni-InGaAs Study
Plan
Anneal Temp Fin Width Time Sequence
220’C20nm, 40nm, 60nm, 80nm,
100nm, 150nm,
200nm, 500nm
10min, 20min, 40min, 60min, 90min,120min
250’C (repeat)
5min, 10min, 20min, 40min, 60min, 90min
280’C2min, 5min, 10min,
20min, 40min, 60minDiffusion
Process
1st EBL - Markers 2nd EBL – Ni lines 3rd EBL – Fin
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Integrated Electronics and Bio-interfaces Lab
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Dose Test for HSQ
• Surface Cleaning: Dip in CD30, 10min• Spin-coating: 6000rpm (2000rpm/s), 60s• Bake: 80’C for 4min • Developing: 80’C (measured to be 50’C) HDMS for 30s
Test parameters:
Recipe
• Writing Dosage: 750, 1000, 1250, 1500, 1750, 2000 uC/cm2
• Directly on InGaAs surface & on Ni lines• One & two layers writing on Ni lines for protection• Room temperature & 80’C developing
Results:
• No much difference of writing on Ni lines or directly on InGaAs• 1750 uC/cm2 is good for one layer writing, 1250 uC/cm2 for 2 layers• Room temperature development gives more residuals • Current resolution of HSQ fin width ~ 28 nm
750 uC/cm2
1 layer lines on Ni750 uC/cm2
2 layer lines on Ni
1000 uC/cm2
1 layer lines on Ni1000 uC/cm2
2 layer lines on Ni
1250 uC/cm2
1 layer lines on Ni1250 uC/cm2
2 layer lines on Ni
1500 uC/cm2
1 layer lines on Ni1500 uC/cm2
2 layer lines on Ni
1750 uC/cm2
1 layer lines on Ni1750 uC/cm2
2 layer lines on Ni
2000 uC/cm2
1 layer lines on Ni2000 uC/cm2
2 layer lines on Ni
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Integrated Electronics and Bio-interfaces Lab
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Cl-ICP Etching
• Chamber Cleaning: 20min O2 plasma at 200W• Etching condition: 4 mTorr, ICP/RIE=230/30 W, Cl2/N2=2/20 sccm• Etching time: 105 s
Recipe
ICP/RIE=230/30 W ICP/RIE=230/50 W
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Integrated Electronics and Bio-interfaces Lab
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Plan
1. Continue to finish the fabrication of the new set of Ni-InGaAs samples
-- EBL writing for Fin layer, followed by InGaAs dry etching and surface smoothing
-- RTA will be perform at two temperature and different time interval for these 12 samples
-- AFM will be used to measure the surface profile of the reacted Ni-InGaAs
-- Measure & plot the nickelide length with different fin width and reaction time
2. For achieving sub-10nm lines with HSQ
-- Mode 6 (lens 5) writing, writing filed will be 60um x 60um
-- dilute HSQ with MIBK
3. Fabricate the new set of neural probe samples with Ti/Ni/Ti/Ni metal stacking
-- Ti/Ni/Ti/Ni = 20/200/30/50 ?
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Integrated Electronics and Bio-interfaces Lab
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Thank you
Q&A