vlsi for electricals - veena
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VLSI For Electrical Engineering
Dr. Veena S [email protected]
ProfessorDepartment of Electronics & Communication
EngineeringBNMIT
mailto:[email protected]:[email protected] -
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Agenda
Introduction- History, Revolution, growth
Understand the core device - MOS
Shrinking MOS / Scaling
Design Methodology
SOC
Product development flow
Getting ready for semiconductor Industry
Summary
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Guess and Identify..
ok closely n' guess what they cud be...
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So it is
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Smart home control application
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History
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Silicon Revolution in 40 years !!
Intel PentiumII, 1997
Clock: 233MHz
Number of transistors: 7.5 M
Gate Length: 0.35
First integrated circuit (germanium), 1958Jack S. Kilby , Texas Instruments
Contained five components, three types:transistors resistors and capacitors
1958
19581997
1997
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Gorden Moore
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Moores Law Feature Size
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Growth
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1 cm 1 mm 0.1 mm 10m 1 m 0.1 m 10 nm 1 nm 1
Chip size(1 cm)
Diameter ofHuman Hair
(70 m)
1996 devices(0.35 m)
2007 devices(0.1 m)
Siliconatomradius
(1.17 )Deep UV
Wavelength(0.248 m)
X-rayWavelength
(0.6 nm)
1997 devices(0.25 m)
1 Micron, 1 m = 1000 nM
1 nM = 10 A0 (Angstrom)
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Moores Law Some analogies
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Transistor- structure
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Transistor- Function
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Transistor- Characteristics
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Transistor- Connections
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Transistor- application
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n+ n+
p-
S
G
D
S D
G
- Substrate , Diffusion , Gate-Oxide(SiO2) & PolySi gate
- Source , Drain , Gate & Substrate
N-Transistor
p+ p+
n-
D
G
S
SD
G
P-Transistor
Vgs >= Vth ON
Vgs < Vth OFF
Vgs Vth OFF
Vss Vdd
Vss Vdd
- MOS Transistor is Bi-Directional Device
Substrate
Substrate
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Transistor- application
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a b
S = 0
S = 1
a b
Vss
Vdd
Vss
Vdd
Vgs S
DG
S
DG
Vgs
a b
S = 1
S = 0
a b
s
-s
a b
N-Switch
P-Switch
Complimentary Switch(Transmission Gate)
a b
Transistor Schematic
Logic Symbol
s
-s
S=1 : Output b is Good 0 / Good 1
Depending on input a.
S=0 : Switch is OFF
No path from a to b.
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CMOS logic
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Vdd
Vss
a x
a x
0
1
1
0
Circuit Symbol
Vdd
Vss
a
b
xa b
0
0
1
1
0
1
0
1
a b x1
1
1
0
a xab x
Circuit Symbol
Vdd
Vss
a
b
a b
x
0
0
1
1
0
1
0
1
a b x1
0
0
0
ab
x
Circuit Symbol
INVERTER NAND2 NOR2
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Inverter Mask Set
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Transistors and wires are defined by masks
Cross-section taken along dashed line
GND VDD
Y
A
substrate tap well tap
nMOS transistor pMOS transistor
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Inverter Layout
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Scaling
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Scaling- FET
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Short Channel Effect
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2 D Field effects
Drain Induced Barrier Lowering DIBL
Mobility reduction
Threshold reduction
High Electrical field in the channel Carrier velocity saturation
Impact Ionization Hot Electron effect
Gate oxide charging
Parasitic Bipolar effect
Decrease of Source Drain distance
Punch through
Channel length modulation
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Wire Scaling
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0
5
10
15
20
25
30
35
40
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0.65um 0.5um 0.35um 0.25um 0.18um 0.13um 0.1um
Delay(p
Gate
Cu Interconnect
Al Interconnect
Cu + Gate
Al + Gate
Mark Bohr, Intel, IEDM95
Wire
43um long
0.8um high
Scaled width
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VLSI Design
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Design Description Domains
Structural DomainBehavioral Domain
Physical Domain
Transistor
Cells
Modules
Chips , Boards & Boxes
Transistor
Gates. Adders, Registers
RISC Processor
Chip / System
Instruction
Subroutines
OS
Application
Architectural Abstraction Layer
RTL, Logic Abstraction Layer
Circuit Abstraction Layer
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IN [ 1 : N ] OUT [ 1 : M ]
CS [1 : K] NS [ 1 : K]
CombinationalLogic ( C / L )
D
Reg
Clock
OUT = F1 (IN , CS);NS = F2 (IN , CS)
Generalized Mealy Model for Synchronous Sequential Machines
DReg
DReg
DReg
DRegC / L
1
C / L
2
C / L
3SYS_CLK
Iterative Model for Synchronous Sequential Machines
t1 t2 t3 t4
Clk (1) Clk (2) Clk (3) Clk (4)
Stage 1 Stage 2 Stage 3 Stage 4
q
TT >= tclk-q+ tC/Lmax + t setup
( )
SYS_CLK
Timing Constraint
q q qD D D D
RTL Model Sequential Machine & Finite State Machine (FSM)
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- Performance Speed , Power , Function & flexibility.-Size of Die ( hence cost of Die).-Time to Design ( hence cost of Engineering & Schedule ).- Ease of Test Generation ( hence cost of Engineering & Schedule ).
Implementation Options :
Performance
Die Size
Design Effort
Test Generation Effort
Low Medium High
Large Small Smallest
Low Medium Very High
Low Medium High
Gate Array Cell Based Full Custom
NOTE : Test Generation has two aspects. 1. Design or Function Test . & 2. Manufacturing Test.
System Design Parameters to Consider
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Structured Design Strategies
Hierarchy :Successive refinement of design abstraction to Manage complexity.Structural hierarchy within one Abstraction Level.
Regularity:Reuse blocks designed once , many times to improve design productivity.
Modularity :
Module -> Sub-Module - > .-> Leaf Cell.Well defined functionality & Interface.
Locality :Well characterized module interface to hide internal design details.
- These have a strong Parallel to Object oriented Software design Methodology.
-Hierarchy : Successive refinement of SW Design into lower & lower functions/objects.- Regularity : Repetitive use of Objects. Object Reuse ( Object Factory.).-Modularity : Well defined object functionality & interface to enable reuse of the Objects- Locality : Local variables & Methods hidden from outside world.
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Structured Software & VLSI Hardware Design
Software Hardware
Hierarchy
Regularity
Modularity
Locality
Subroutines , Libraries Modules
Iteration,Code-sharing,OO-Procedures
Data pathModule Reuse,Regular arrays,
Well defined SubroutineInterface
Well DefinedModule Interface,
Timing & Loading Data.
Local Scoping,No Global Variables.
Local ConnectionThro Floor-planning.Registered I/O.
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SOC
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What is SoC?
System-on-ChipAn IC that integrates the major functional elements of acomplete end-product into a single chip.
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SOC (Contd.)
An SOC contains
Reusable IP
Embedded processor/Memory
Real world interface
Mixed signal blocks
Programmable hardware
Has more than 500K gates
Use 0.25um technology or below
Not an ASIC
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SOC design methodology revolution
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Product Life cycle development
Idea StageIdea can be fromanywhere Idea should be in syncwith the companys
objective Core Resources availableatCompanys reach.
Business caseMarketing Responsibility Market analysis Costing and ROI workedout Competitive analysis anddifferentiators identified
Product FeasibilitySystem EngineeringResponsibility Application scenarios Feature definition Feasibility with Engineering Product specification,HW/SF/DSP needs identified
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Product Life cycle development (Contd.)
Product commit Management commitsto invest Engineering commits todevelop
Tape Out decision Marketing Responsibility Market analysis Costing and ROI workedout Competitive analysis anddifferentiators identified
Chip Validation and EngineeringSamples System EngineeringResponsibility Application scenarios Feature definition Feasibility with Engineering Product specification,
HW/SF/DSP needs identified
Product Release System EngineeringResponsibility Application scenarios Feature definition Feasibility with Engineerin Product specification,HW/SF/DSP needs identifie
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A Typical Design Flow - Simplified
HDL Capture
HDL Synthesis
Schematic Capture
HDL Simulation
RTL SIM - OK ?N
Y
Gate SIM - OK ?N
Y
A
B
Front End Design
Tech_Dbase
Design Concept
Back End Design
Floor Plan
SC & Block P&R
Y
Gate SIM - OK ?N
Y
C
D
Net & ParasiticsExtraction
Back Annotation
Pad Ring &Power P&R
Mask Data Generation
To Si Foundry
Tech_Dbase
Tech_Dbase
Tech_Dbase
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Skill Set Requirement
VLSI specific skills:
Understanding of the basic CMOS process
VLSI design flow and entry/exit criteria for each phase
Capability to visualize the logic for a function.
HDL coding to realize the logic
EDA Tool flow and usage
Scripting skills for data analysis
C+ programming skills for co verification
Logic parameters and their relevance
Additional knowledge
Processor architecture Interfacing
Timing requirements
Clocking strategy
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Opportunities
Product development Services Design houses
Board design houses
System integration services
Test houses
Repair and maintenance services Verification services
Product companies Total Solutions
Fabrication houses Quicker shuttles
Characterization
Certification bodies
Consultancy services
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Opportunities
Larger system development
State of Art development suites
Close relationship with customers and suppliers
Challenges at all phases of the development
Opportunity to become Multi skilled
World connect Need to do distributed development
taking advantage of geographic locations
Global coordination
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What does this mean?
Do it ..
Right First time
Communicate clearly
Quick
Defined matured process
Compliant to process
Acquire multiple skills
Learn new development suites
Learn different languages
Analyze every issue
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Some Tips for You!
Find application for your task
Communicate Well
Be open for Learning
Get broader perspective
Detailing
Be a perfectionist
Plan you career in advance
Be patient
Develop good attitude
Be a good Team player
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Summary
VLSI - Revisited
Understand the core device - MOS
Shrinking MOS / Scaling Design Description Domains : Behavior , Structure & Physical.
RTL Design , Synchronous Sequential Machine , FSM
System Design Parameters Performance , Die Size , Design Effort , Test Generation Effort.
Design Strategies
SOC
Product development Cycle
Typical Design Flow
Getting ready for Semiconductor Industry
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Get yourselves equipped to be a part of excitingfast growing field
VLSI needs you, Get Ready!